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Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Authors:
Aymen Mahmoudi,
Meryem Bouaziz,
Niels Chapuis,
Geoffroy Kremer,
Julien Chaste,
Davide Romanin,
Marco Pala,
François Bertran,
Patrick Le Fèvre,
Iann C. Gerber,
Gilles Patriarche,
Fabrice Oehler,
Xavier Wallart,
Abdelkarim Ouerghi
Abstract:
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here…
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The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the gamma point of the Brillouin zone. The epitaxial growth of WSe2 on GaP(111)B heterostructures paves the way for further studies of the fundamental properties of these complex materials, as well as prospects for their implementation in devices to exploit their promising electronic and optical properties.
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Submitted 9 October, 2023;
originally announced October 2023.
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Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride
Authors:
Meryem Bouaziz,
Aymen Mahmoudi,
Geoffroy Kremer,
Julien Chaste,
Cesar Gonzalez,
Yannick J. Dappe,
Francois Bertran,
Patrick Le Fevre,
Marco Pala,
Fabrice Oehler,
Jean-Christophe Girard,
Abdelkarim Ouerghi
Abstract:
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structura…
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Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structural properties of chain-like InTe are essential for better understanding of device applications such as thermoelectrics. Here, we use scanning tunneling microscopy/spectroscopy (STM/STS) measurements and density functional theory (DFT) calculations to directly image the in-plane structural anisotropy in tetragonal Indium Telluride (InTe). As results, we report the direct observation of one-dimensional In1+ chains in InTe. We demonstrate that InTe exhibits a band gap of about 0.40 +-0.02 eV located at the M point of the Brillouin zone. Additionally, line defects are observed in our sample, were attributed to In1+ chain vacancy along the c-axis, a general feature in many other TlSe-like compounds. Our STS and DFT results prove that the presence of In1+ induces localized gap state, located near the valence band maximum (VBM). This acceptor state is responsible for the high intrinsic p-type doping of InTe that we also confirm using angle-resolved photoemission spectroscopy.
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Submitted 17 August, 2023;
originally announced August 2023.
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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$
Authors:
Geoffroy Kremer,
Aymen Mahmoudi,
Adel M'Foukh,
Meryem Bouaziz,
Mehrdad Rahimi,
Maria Luisa Della Rocca,
Patrick Le Fèvre,
Jean-Francois Dayen,
François Bertran,
Sylvia Matzen,
Marco Pala,
Julien Chaste,
Fabrice Oehler,
Abdelkarim Ouerghi
Abstract:
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since mos…
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Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since most bulk FE materials lose their ferroelectric character at the 2D limit due to depolarization field. Using angle resolved photoemission spectroscopy (ARPES), we unveil another unusual 2D phenomena appearing in 2H α-In$_{2}$Se$_{3}$ single crystals, the occurrence of a highly metallic two-dimensional electron gas (2DEG) at the surface of vacuum-cleaved crystals. This 2DEG exhibits two confined states which correspond to an electron density of approximatively 10$^{13}$ electrons/cm$^{3}$, also confirmed by thermoelectric measurements. Combination of ARPES and density functional theory (DFT) calculations reveals a direct band gap of energy equal to 1.3 +/- 0.1 eV, with the bottom of the conduction band localized at the center of the Brillouin zone, just below the Fermi level. Such strong n-type doping further supports the quantum confinement of electrons and the formation of the 2DEG.
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Submitted 9 August, 2023;
originally announced August 2023.
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Abstract interpretation of Michelson smart-contracts
Authors:
Guillaume Bau,
Antoine Miné,
Vincent Botbol,
Mehdi Bouaziz
Abstract:
Static analysis of smart-contracts is becoming more widespread on blockchain platforms. Analyzers rely on techniques like symbolic execution or model checking, but few of them can provide strong soundness properties and guarantee the analysis termination at the same time. As smart-contracts often manipulate economic assets, proving numerical properties beyond the absence of runtime errors is also…
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Static analysis of smart-contracts is becoming more widespread on blockchain platforms. Analyzers rely on techniques like symbolic execution or model checking, but few of them can provide strong soundness properties and guarantee the analysis termination at the same time. As smart-contracts often manipulate economic assets, proving numerical properties beyond the absence of runtime errors is also desirable. Smart-contract execution models differ considerably from mainstream programming languages and vary from one blockchain to another, making state-of-the-art analyses hard to adapt. For instance, smart-contract calls may modify a persistent storage impacting subsequent calls. This makes it difficult for tools to infer invariants required to formally ensure the absence of exploitable vulnerabilities. The Michelson smart-contract language, used in the Tezos blockchain, is strongly typed, stack-based, and has a strict execution model leaving few opportunities for implicit runtime errors. We present a work in progress static analyzer for Michelson based on Abstract Interpretation and implemented within MOPSA, a modular static analyzer. Our tool supports the Michelson semantic features, including inner calls to external contracts. It can prove the absence of runtime errors and infer invariants on the persistent storage over an unbounded number of calls. It is also being extended to prove high-level numerical and security properties. CCS Concepts: $\bullet$ Security and privacy $\rightarrow$ Logic and verification; $\bullet$ Software and its engineering $\rightarrow$ Automated static analysis.
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Submitted 11 October, 2022;
originally announced October 2022.
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Parallel Long Short-Term Memory for Multi-stream Classification
Authors:
Mohamed Bouaziz,
Mohamed Morchid,
Richard Dufour,
Georges Linarès,
Renato De Mori
Abstract:
Recently, machine learning methods have provided a broad spectrum of original and efficient algorithms based on Deep Neural Networks (DNN) to automatically predict an outcome with respect to a sequence of inputs. Recurrent hidden cells allow these DNN-based models to manage long-term dependencies such as Recurrent Neural Networks (RNN) and Long Short-Term Memory (LSTM). Nevertheless, these RNNs pr…
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Recently, machine learning methods have provided a broad spectrum of original and efficient algorithms based on Deep Neural Networks (DNN) to automatically predict an outcome with respect to a sequence of inputs. Recurrent hidden cells allow these DNN-based models to manage long-term dependencies such as Recurrent Neural Networks (RNN) and Long Short-Term Memory (LSTM). Nevertheless, these RNNs process a single input stream in one (LSTM) or two (Bidirectional LSTM) directions. But most of the information available nowadays is from multistreams or multimedia documents, and require RNNs to process these information synchronously during the training. This paper presents an original LSTM-based architecture, named Parallel LSTM (PLSTM), that carries out multiple parallel synchronized input sequences in order to predict a common output. The proposed PLSTM method could be used for parallel sequence classification purposes. The PLSTM approach is evaluated on an automatic telecast genre sequences classification task and compared with different state-of-the-art architectures. Results show that the proposed PLSTM method outperforms the baseline n-gram models as well as the state-of-the-art LSTM approach.
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Submitted 11 February, 2017;
originally announced February 2017.
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Inversion dans les tournois
Authors:
Houmem Belkhechine,
Moncef Bouaziz,
Imed Boudabbous,
Maurice Pouzet
Abstract:
We consider the transformation reversing all arcs of a subset $X$ of the vertex set of a tournament $T$. The \emph{index} of $T$, denoted by $i(T)$, is the smallest number of subsets that must be reversed to make $T$ acyclic. It turns out that critical tournaments and $(-1)$-critical tournaments can be defined in terms of inversions (at most two for the former, at most four for the latter). We int…
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We consider the transformation reversing all arcs of a subset $X$ of the vertex set of a tournament $T$. The \emph{index} of $T$, denoted by $i(T)$, is the smallest number of subsets that must be reversed to make $T$ acyclic. It turns out that critical tournaments and $(-1)$-critical tournaments can be defined in terms of inversions (at most two for the former, at most four for the latter). We interpret $i(T)$ as the minimum distance of $T$ to the transitive tournaments on the same vertex set, and we interpret the distance between two tournaments $T$ and $T'$ as the \emph{Boolean dimension} of a graph, namely the Boolean sum of $T$ and $T'$. On $n$ vertices, the maximum distance is at most $n-1$, whereas $i(n)$, the maximum of $i(T)$ over the tournaments on $n$ vertices, satisfies $\frac {n-1}{2} - \log_{2}n \leq i(n) \leq n-3$, for $n \geq 4$. Let $ \mathcal{I}_{m}^{< ω}$ (resp. $\mathcal{I}_{m}^{\leq ω}$) be the class of finite (resp. at most countable) tournaments $T$ such that $i(T) \leq m$. The class $\mathcal {I}_{m}^{< ω}$ is determined by finitely many obstructions. We give a morphological description of the members of $\mathcal {I}_{1}^{< ω}$ and a description of the critical obstructions. We give an explicit description of an universal tournament of the class $\mathcal{I}_{m}^{\leq ω}$.
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Submitted 13 July, 2010;
originally announced July 2010.
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Join-irreducible Boolean functions
Authors:
Moncef Bouaziz,
Miguel Couceiro,
Maurice Pouzet
Abstract:
This paper is a contribution to the study of a quasi-order on the set $Ω$ of Boolean functions, the \emph{simple minor} quasi-order. We look at the join-irreducible members of the resulting poset $\tildeΩ$. Using a two-way correspondence between Boolean functions and hypergraphs, join-irreducibility translates into a combinatorial property of hypergraphs. We observe that among Steiner systems, t…
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This paper is a contribution to the study of a quasi-order on the set $Ω$ of Boolean functions, the \emph{simple minor} quasi-order. We look at the join-irreducible members of the resulting poset $\tildeΩ$. Using a two-way correspondence between Boolean functions and hypergraphs, join-irreducibility translates into a combinatorial property of hypergraphs. We observe that among Steiner systems, those which yield join-irreducible members of $\tildeΩ$ are the -2-monomorphic Steiner systems. We also describe the graphs which correspond to join-irreducible members of $\tildeΩ$.
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Submitted 23 March, 2009;
originally announced March 2009.
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Irreducible Boolean Functions
Authors:
Moncef Bouaziz,
Miguel Couceiro,
Maurice Pouzet
Abstract:
This paper is a contribution to the study of a quasi-order on the set $Ω$ of Boolean functions, the \emph{simple minor} quasi-order. We look at the join-irreducible members of the resulting poset $\tildeΩ$. Using a two-way correspondence between Boolean functions and hypergraphs, join-irreducibility translates into a combinatorial property of hypergraphs. We observe that among Steiner systems, t…
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This paper is a contribution to the study of a quasi-order on the set $Ω$ of Boolean functions, the \emph{simple minor} quasi-order. We look at the join-irreducible members of the resulting poset $\tildeΩ$. Using a two-way correspondence between Boolean functions and hypergraphs, join-irreducibility translates into a combinatorial property of hypergraphs. We observe that among Steiner systems, those which yield join-irreducible members of $\tildeΩ$ are the -2-monomorphic Steiner systems. We also describe the graphs which correspond to join-irreducible members of $\tildeΩ$.
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Submitted 18 January, 2008;
originally announced January 2008.