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Striped magnetization plateau and chirality-reversible anomalous Hall effect in a magnetic kagome metal
Authors:
Erjian Cheng,
Ning Mao,
Xiaotian Yang,
Boqing Song,
Rui Lou,
Tianping Ying,
Simin Nie,
Alexander Fedorov,
François Bertran,
Pengfei Ding,
Oleksandr Suvorov,
Shu Zhang,
Susmita Changdar,
Walter Schnelle,
Ralf Koban,
Changjiang Yi,
Ulrich Burkhardt,
Bernd Büchner,
Shancai Wang,
Yang Zhang,
Wenbo Wang,
Claudia Felser
Abstract:
Kagome materials with magnetic frustration in two-dimensional networks are known for their exotic properties, such as the anomalous Hall effect (AHE) with non-collinear spin textures. However, the effects of one-dimensional (1D) spin chains within these networks are less understood. Here, we report a distinctive AHE in the bilayer-distorted kagome material GdTi$_3$Bi$_4$, featuring 1D Gd zigzag sp…
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Kagome materials with magnetic frustration in two-dimensional networks are known for their exotic properties, such as the anomalous Hall effect (AHE) with non-collinear spin textures. However, the effects of one-dimensional (1D) spin chains within these networks are less understood. Here, we report a distinctive AHE in the bilayer-distorted kagome material GdTi$_3$Bi$_4$, featuring 1D Gd zigzag spin chains, a one-third magnetization plateau, and two successive metamagnetic transitions. At these metamagnetic transitions, Hall resistivity shows abrupt jumps linked to the formation of stripe domain walls, while within the plateau, the absence of detectable domain walls suggests possible presence of skyrmion phase. Reducing the sample size to a few microns reveals additional Hall resistivity spikes, indicating domain wall skew scattering contributions. Magnetic atomistic spin dynamics simulations reveal that the magnetic textures at these transitions have reverse chirality, explaining the evolution of AHE and domain walls with fields. These results underscore the potential of magnetic and crystal symmetry interplay, and magnetic field-engineered spin chirality, for controlling domain walls and tuning transverse properties, advancing spintronic applications.
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Submitted 2 September, 2024;
originally announced September 2024.
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Two-dimensional to bulk crossover of the WSe$_2$ electronic band structure
Authors:
Patrick Le Fèvre,
Raphaël Salazar,
Matthieu Jamet,
François Bertran,
Chiara Bigi,
Abdelkarim Ourghi,
Céline Vergnaud,
Aki Pulkkinen,
Jan Minar,
Thomas Jaouen,
Julien Rault
Abstract:
Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spect…
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Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of epitaxial WSe$_2$ thin films. Increasing number of discrete electronic states appears in given kz-ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green's function calculation. This two-dimensional system is hence used as a benchmark to compare different theoretical approaches.
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Submitted 4 July, 2024;
originally announced July 2024.
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Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A
Authors:
Mohamed Ali Khaled,
Leonardo Cancellara,
Salima Fekraoui,
Richard Daubriac,
François Bertran,
Chiara Bigi,
Quentin Gravelier,
Richard Monflier,
Alexandre Arnoult,
Corentin Durand,
Sébastien Plissard
Abstract:
Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the first materials studied, Bismuth Antimony alloys (Bi1-xSbx) show great potential due to their tuneable electronic band structure and efficient charge-to-spin conversion. Here, we report the growth of Bi1-xSbx thin films…
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Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the first materials studied, Bismuth Antimony alloys (Bi1-xSbx) show great potential due to their tuneable electronic band structure and efficient charge-to-spin conversion. Here, we report the growth of Bi1-xSbx thin films on GaAs (111)A substrates following two different protocols. For the conventional epitaxy process, the grown films show excellent crystallinity and twin domains corresponding to an in-plane 180{\textdegree} rotation of the crystalline structure. Domain walls are found to be composition-dependent and have a lower density for Antimony-rich films. For the optimized process, depositing an Antimony bilayer prior to BiSb growth allows achieving single crystallinity of the TI films. The topologically protected surface states are evidenced by ex-situ ARPES measurements for domains-free and conventional films. To the best of our knowledge, this work presents the first large-scale epitaxial integration of single crystalline Bi1-xSbx thin films on industrial substrates.
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Submitted 23 May, 2024;
originally announced May 2024.
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Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$
Authors:
Alexandre Llopez,
Frédéric Leroy,
Calvin Tagne-Kaegom,
Boris Croes,
Adrien Michon,
Chiara Mastropasqua,
Mohamed Al Khalfioui,
Stefano Curiotto,
Pierre Müller,
Andrés Saùl,
Bertrand Kierren,
Geoffroy Kremer,
Patrick Le Fèvre,
François Bertran,
Yannick Fagot-Revurat,
Fabien Cheynis
Abstract:
Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we…
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Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we report the growth of Td-WTe$_2$ ultrathin films by MBE on monolayer (ML) graphenereaching a mean flake size of $\cong$110nm, which is, on overage, more than three time larger thanprevious results. WTe$_2$ films thicker than 5nm have been successfully synthesized and exhibit theexpected Td-phase atomic structure. We rationalize epitaxial growth of Td-WTe$_2$ and propose asimple model to estimate the mean flake size as a function of growth parameters that can be appliedto other transition metal dichalcogenides (TMDCs). Based on nucleation theory and Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showinga critical coverage of 0.13ML above which WTe$_2$ nucleation becomes negligible. The quality ofmonolayer WTe$_2$ films is demonstrated from electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES) in agreement with first-principle calculationsperformed on free-standing WTe$_2$ and previous reports.
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Submitted 15 April, 2024;
originally announced April 2024.
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On the cuprates' universal waterfall feature: evidence of a momentum-driven crossover
Authors:
Benjamin Bacq-Labreuil,
Chafic Fawaz,
Yuichi Okazaki,
Yukiko Obata,
Hervé Cercellier,
Patrick Lefevre,
François Bertran,
David Santos-Cottin,
Hajime Yamamoto,
Ikuya Yamada,
Masaki Azuma,
Koji Horiba,
Hiroshi Kumigashira,
Matteo d'Astuto,
Silke Biermann,
Benjamin Lenz
Abstract:
We study two related universal anomalies of the spectral function of cuprates, so called waterfall and high-energy kink features, by a combined cellular dynamical mean-field theory and angle-resolved photoemission study for the oxychloride Na$_x$Ca$_{2-x}$CuO$_2$Cl$_2$ (Na-CCOC). Tracing their origin back to an interplay of spin-polaron and local correlation effects both in undoped and hole-doped…
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We study two related universal anomalies of the spectral function of cuprates, so called waterfall and high-energy kink features, by a combined cellular dynamical mean-field theory and angle-resolved photoemission study for the oxychloride Na$_x$Ca$_{2-x}$CuO$_2$Cl$_2$ (Na-CCOC). Tracing their origin back to an interplay of spin-polaron and local correlation effects both in undoped and hole-doped (Na-)CCOC, we establish them as a universal crossover between regions differing in the momentum dependence of the coupling and not necessarily in the related quasiparticles' energies. The proposed scenario extends to doping levels coinciding with the cuprate's superconducting dome and motivates further investigations of the fate of spin-polarons in the superconducting phase.
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Submitted 8 July, 2024; v1 submitted 21 December, 2023;
originally announced December 2023.
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Weak Electronic Correlations Observed in Magnetic Weyl Semimetal Mn$_3$Ge
Authors:
Susmita Changdar,
Susanta Ghosh,
Anumita Bose,
Indrani Kar,
Achintya Low,
Patrick Le Fevre,
François Bertran,
Awadhesh Narayan,
Setti Thirupathaiah
Abstract:
Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we systematically studied the electronic band structure of Mn$_3$Ge in the vicinity of the Fermi level. We observe several bands crossing the Fermi level, confirming the metallic nature of the studied system. We further observe several flat bands along various high symmetry directions, consist…
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Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we systematically studied the electronic band structure of Mn$_3$Ge in the vicinity of the Fermi level. We observe several bands crossing the Fermi level, confirming the metallic nature of the studied system. We further observe several flat bands along various high symmetry directions, consistent with the DFT calculations. The calculated partial density of states (PDOS) suggests a dominant Mn $3d$ orbital contribution to the total valence band DOS. With the help of orbital-resolved band structure calculations, we qualitatively identify the orbital information of the experimentally obtained band dispersions. Out-of-plane electronic band dispersions are explored by measuring the ARPES data at various photon energies. Importantly, our study suggests relatively weaker electronic correlations in Mn$_3$Ge compared to Mn$_3$Sn.
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Submitted 1 December, 2023;
originally announced December 2023.
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Electronic bandstructure of superconducting KTaO3 (111) interfaces
Authors:
Srijani Mallik,
Börge Göbel,
Hugo Witt,
Luis M. Vicente-Arche,
Sara Varotto,
Julien Bréhin,
Gerbold Ménard,
Guilhem Saïz,
Dyhia Tamsaout,
Andrés Felipe Santander-Syro,
Franck Fortuna,
François Bertran,
Patrick Le Fèvre,
Julien Rault,
Isabella Boventer,
Ingrid Mertig,
Agnès Barthélémy,
Nicolas Bergeal,
Annika Johansson,
Manuel Bibes
Abstract:
Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orient…
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Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orientations has already been mapped using angle-resolved photoemission spectroscopy(ARPES), this is not the case for superconducting KTaO3 2DEGs. Here, we reveal the electronic structure of superconducting 2DEGs based on KTaO3 (111) single crystals through ARPES measurements. We fit the data with a tight-binding model and compute the associated spin textures to bring insight into the SOC-driven physics of this fascinating system.
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Submitted 14 November, 2023;
originally announced November 2023.
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Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Authors:
Aymen Mahmoudi,
Meryem Bouaziz,
Niels Chapuis,
Geoffroy Kremer,
Julien Chaste,
Davide Romanin,
Marco Pala,
François Bertran,
Patrick Le Fèvre,
Iann C. Gerber,
Gilles Patriarche,
Fabrice Oehler,
Xavier Wallart,
Abdelkarim Ouerghi
Abstract:
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here…
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The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the gamma point of the Brillouin zone. The epitaxial growth of WSe2 on GaP(111)B heterostructures paves the way for further studies of the fundamental properties of these complex materials, as well as prospects for their implementation in devices to exploit their promising electronic and optical properties.
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Submitted 9 October, 2023;
originally announced October 2023.
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Electronic structure evolution of the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ with hole and electron doping
Authors:
Himanshu Lohani,
Paul Foulquier,
Patrick Le Fevre,
Francois Bertran,
Dorothee Colson,
Anne Forget,
Veronique Brouet
Abstract:
Co$_3$Sn$_2$S$_2$ has been established as a prototype of magnetic Weyl semimetal, exhibiting a ''giant'' anomalous Hall effect in its ferromagnetic phase. An attractive feature of this material is that Weyl points lie close to Fermi level, so that one can expect a high reactivity of the topological properties to hole or electron doping. We present here a direct observation with Angle Resolved Phot…
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Co$_3$Sn$_2$S$_2$ has been established as a prototype of magnetic Weyl semimetal, exhibiting a ''giant'' anomalous Hall effect in its ferromagnetic phase. An attractive feature of this material is that Weyl points lie close to Fermi level, so that one can expect a high reactivity of the topological properties to hole or electron doping. We present here a direct observation with Angle Resolved Photoemission Spectroscopy of the evolution of the electronic structure under different types of substitutions : In for Sn (hole doping outside the kagome Co plane), Fe for Co (hole doping inside the kagome Co plane) and Ni for Co (electron doping inside the kagome Co plane). We observe clear shifts of selected bands, which are due both to doping and to the reduction of the magnetic splitting by doping. We discriminate between the two by studying the temperature evolution from ferromagnetic to paramagnetic state. We discuss these shifts with the help of DFT calculations using the Virtual Crystal Approximation. We find that these calculations reproduce rather well the evolution with In, but largely fail to capture the effect of Fe and Ni, where local behavior at the impurity site plays an important role.
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Submitted 4 October, 2023;
originally announced October 2023.
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Towards Supporting Sustainable Grocery Shopping through Joyful Technology: Annotated Portfolio of Speculative Ideas
Authors:
Gözel Shakeri,
Frederike Jung,
Ferran Altarriba Bertran,
Daniel Fernandez Galeote,
Adrian Friday
Abstract:
A third of greenhouse gas emissions are attributable to the food sector. A shift in dietary habits could reduce these by half. Engaging and empowering consumers is vital to this critical shift; yet, if we get the framing wrong, we might cause distress or eco-anxiety, impeding initial engagement as well as longer-term diet change. Evoking joy is a powerful yet under-explored motivator to overcome p…
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A third of greenhouse gas emissions are attributable to the food sector. A shift in dietary habits could reduce these by half. Engaging and empowering consumers is vital to this critical shift; yet, if we get the framing wrong, we might cause distress or eco-anxiety, impeding initial engagement as well as longer-term diet change. Evoking joy is a powerful yet under-explored motivator to overcome psychological barriers and support pro-environmental attitudes. This pictorial presents the outcomes of a one-day workshop as a series of speculative ideas in the form of an annotated portfolio, highlighting design qualities and interaction mechanisms that afford joy and sustainability in food choices. Our contribution will inspire HCI researchers and designers to reposition joy as a fundamental value to sustainability communication
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Submitted 8 September, 2023;
originally announced September 2023.
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Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride
Authors:
Meryem Bouaziz,
Aymen Mahmoudi,
Geoffroy Kremer,
Julien Chaste,
Cesar Gonzalez,
Yannick J. Dappe,
Francois Bertran,
Patrick Le Fevre,
Marco Pala,
Fabrice Oehler,
Jean-Christophe Girard,
Abdelkarim Ouerghi
Abstract:
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structura…
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Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structural properties of chain-like InTe are essential for better understanding of device applications such as thermoelectrics. Here, we use scanning tunneling microscopy/spectroscopy (STM/STS) measurements and density functional theory (DFT) calculations to directly image the in-plane structural anisotropy in tetragonal Indium Telluride (InTe). As results, we report the direct observation of one-dimensional In1+ chains in InTe. We demonstrate that InTe exhibits a band gap of about 0.40 +-0.02 eV located at the M point of the Brillouin zone. Additionally, line defects are observed in our sample, were attributed to In1+ chain vacancy along the c-axis, a general feature in many other TlSe-like compounds. Our STS and DFT results prove that the presence of In1+ induces localized gap state, located near the valence band maximum (VBM). This acceptor state is responsible for the high intrinsic p-type doping of InTe that we also confirm using angle-resolved photoemission spectroscopy.
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Submitted 17 August, 2023;
originally announced August 2023.
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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$
Authors:
Geoffroy Kremer,
Aymen Mahmoudi,
Adel M'Foukh,
Meryem Bouaziz,
Mehrdad Rahimi,
Maria Luisa Della Rocca,
Patrick Le Fèvre,
Jean-Francois Dayen,
François Bertran,
Sylvia Matzen,
Marco Pala,
Julien Chaste,
Fabrice Oehler,
Abdelkarim Ouerghi
Abstract:
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since mos…
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Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since most bulk FE materials lose their ferroelectric character at the 2D limit due to depolarization field. Using angle resolved photoemission spectroscopy (ARPES), we unveil another unusual 2D phenomena appearing in 2H α-In$_{2}$Se$_{3}$ single crystals, the occurrence of a highly metallic two-dimensional electron gas (2DEG) at the surface of vacuum-cleaved crystals. This 2DEG exhibits two confined states which correspond to an electron density of approximatively 10$^{13}$ electrons/cm$^{3}$, also confirmed by thermoelectric measurements. Combination of ARPES and density functional theory (DFT) calculations reveals a direct band gap of energy equal to 1.3 +/- 0.1 eV, with the bottom of the conduction band localized at the center of the Brillouin zone, just below the Fermi level. Such strong n-type doping further supports the quantum confinement of electrons and the formation of the 2DEG.
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Submitted 9 August, 2023;
originally announced August 2023.
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Protection of Ising spin-orbit coupling in bulk misfit superconductors
Authors:
Tomas Samuely,
Darshana Wickramaratne,
Martin Gmitra,
Thomas Jaouen,
Ondrej Šofranko,
Dominik Volavka,
Marek Kuzmiak,
Jozef Haniš,
Pavol Szabó,
Claude Monney,
Geoffroy Kremer,
Patrick Le Fèvre,
François Bertran,
Tristan Cren,
Shunsuke Sasaki,
Laurent Cario,
Matteo Calandra,
Igor I. Mazin,
Peter Samuely
Abstract:
Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plan…
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Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plane. Bulk NbSe2 is centrosymmetric and is therefore not an Ising superconductor. We show that bulk misfit compound superconductors, (LaSe)1.14(NbSe2) and (LaSe)1.14(NbSe2)2, comprised of monolayers and bilayers of NbSe2, exhibit unexpected Ising protection with a Pauli-limit violation comparable to monolayer NbSe2, despite formally having inversion symmetry. We study these misfit compounds using complementary experimental methods in combination with first-principles calculations. We propose theoretical mechanisms of how the Ising protection can survive in bulk materials. We show how some of these mechanisms operate in these bulk compounds due to a concerted effect of charge-transfer, defects, reduction of interlayer hopping, and stacking. This highlights how Ising superconductivity can, unexpectedly, arise in bulk materials, and possibly enable the design of bulk superconductors that are resilient to magnetic fields.
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Submitted 6 April, 2023;
originally announced April 2023.
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Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator
Authors:
E. Rongione,
L. Baringthon,
D. She,
G. Patriarche,
R. Lebrun,
A. Lemaitre,
M. Morassi,
N. Reyren,
M. Micica,
J. Mangeney,
J. Tignon,
F. Bertran,
S. Dhillon,
P. Le Fevre,
H. Jaffres,
J. -M. George
Abstract:
The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface…
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The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation.
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Submitted 25 March, 2023;
originally announced March 2023.
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Evolution of the spectral lineshape at the magnetic transition in Sr2IrO4 and Sr3Ir2O7
Authors:
Paul Foulquier,
Marcello Civelli,
Marcelo Rozenberg,
Alberto Camjayi,
Joel Bobadilla,
Dorothee Colson,
Anne Forget,
Pierre Thuery,
Francois Bertran,
Patrick Le Fevre,
Veronique Brouet
Abstract:
Sr2IrO4 and Sr3Ir2O7 form two families of spin-orbit Mott insulators with quite different charge gaps and an antiferromagnetic (AF) ground state. This offers a unique opportunity to study the impact of long-range magnetic order in Mott insulators. It appears to play a different role in the two families, as there is almost no change of the resistivity at the magnetic transition TN in Sr2IrO4 and a…
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Sr2IrO4 and Sr3Ir2O7 form two families of spin-orbit Mott insulators with quite different charge gaps and an antiferromagnetic (AF) ground state. This offers a unique opportunity to study the impact of long-range magnetic order in Mott insulators. It appears to play a different role in the two families, as there is almost no change of the resistivity at the magnetic transition TN in Sr2IrO4 and a large one in Sr3Ir2O7. We use angle-resolved photoemission to study the evolution of the spectral lineshape through the magnetic transition. We use Ru and La substitutions to tune TN and discriminate changes due to temperature from those due to magnetic order. We evidence a shift and a transfer of spectral weight in the gap at TN in Sr3Ir2O7, which is absent in Sr2IrO4. We assign this behavior to a significantly larger coherent contribution to the spectral lineshape in Sr3Ir2O7, which evolves strongly at TN. On the contrary, the Sr2IrO4 lineshape is dominated by the incoherent part, which is insensitive to TN. We compare these findings to theoretical expections of the Slater vs Mott antiferromagnetism within Dynamical Mean Field Theory.
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Submitted 13 January, 2023;
originally announced January 2023.
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Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures
Authors:
Raphaël Salazar,
Sara Varotto,
Céline Vergnaud,
Vincent Garcia,
Stéphane Fusil,
Julien Chaste,
Thomas Maroutian,
Alain Marty,
Frédéric Bonell,
Debora Pierucci,
Abdelkarim Ouerghi,
François Bertran,
Patrick Le Fèvre,
Matthieu Jamet,
Manuel Bibes,
Julien Rault
Abstract:
Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonst…
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Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects.
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Submitted 26 October, 2022;
originally announced October 2022.
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Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO$_3$ interfaces
Authors:
Sara Varotto,
Annika Johansson,
Börge Göbel,
Luis M. Vicente-Arche,
Srijani Mallik,
Julien Bréhin,
Raphaël Salazar,
François Bertran,
Patrick Le Fèvre,
Nicolas Bergeal,
Julien Rault,
Ingrid Mertig,
Manuel Bibes
Abstract:
Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advan…
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Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advanced understanding of their rich spin-orbit physics. Here, we investigate KTaO$_3$-2DEGs and evidence their Rashba-split bands using angle resolved photoemission spectroscopy. Fitting the bands with a tight-binding Hamiltonian, we extract the effective Rashba coefficient and bring insight into the complex multiorbital nature of the band structure. Our calculations reveal unconventional spin and orbital textures, showing compensation effects from quasi-degenerate band pairs which strongly depend on in-plane anisotropy. We compute the band-resolved spin and orbital Edelstein effects, and predict interconversion efficiencies exceeding those of other oxide 2DEGs. Finally, we suggest design rules for Rashba systems to optimize spin-charge interconversion performance.
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Submitted 18 July, 2022;
originally announced July 2022.
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Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal
Authors:
Beatriz Muñiz Cano,
Adrían Gudín,
Jaime Sánchez-Barriga,
Oliver J. Clark,
Alberto Anadón,
Jose Manuel Díez,
Pablo Olleros-Rodríguez,
Fernando Ajejas,
Iciar Arnay,
Matteo Jugovac,
Julien Rault,
Patrick Le Févre,
François Bertran,
Donya Mazhjoo,
Gustav Bihlmayer,
Stefan Blügel,
Rodolfo Miranda,
Julio Camarero,
Miguel Angel Valbuena,
Paolo Perna
Abstract:
Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this g…
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Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices.
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Submitted 1 May, 2023; v1 submitted 9 June, 2022;
originally announced June 2022.
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Orbital-selective Band Hybridisation at the Charge Density Wave Transition in Monolayer TiTe$_2$
Authors:
T. Antonelli,
W. Rahim,
M. D. Watson,
A. Rajan,
O. J. Clark,
A. Danilenko,
K. Underwood,
I. Markovic,
E. Abarca-Morales,
S. R. Kavanagh,
P. Fevre,
F. Bertran,
K. Rossnagel,
D. O. Scanlon,
P. D. C. King
Abstract:
An anomalous $(2\times2)$ charge density wave (CDW) phase emerges in monolayer 1T-TiTe$_2$ which is absent for the bulk compound, and whose origin is still poorly understood. Here, we investigate the electronic band structure evolution across the CDW transition using temperature-dependent angle-resolved photoemission spectroscopy. Our study reveals an orbital-selective band hybridisation between t…
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An anomalous $(2\times2)$ charge density wave (CDW) phase emerges in monolayer 1T-TiTe$_2$ which is absent for the bulk compound, and whose origin is still poorly understood. Here, we investigate the electronic band structure evolution across the CDW transition using temperature-dependent angle-resolved photoemission spectroscopy. Our study reveals an orbital-selective band hybridisation between the backfolded conduction and valence bands occurring at the CDW phase transition, which in turn leads to a significant electronic energy gain, underpinning the CDW transition. For the bulk compound, we show how this energy gain is almost completely suppressed due to the three-dimensionality of the electronic band structure, including via a $k_z$-dependent band inversion which switches the orbital character of the valence states. Our study thus sheds new light on how control of the electronic dimensionalilty can be used to trigger the emergence of new collective states in 2D materials.
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Submitted 29 March, 2022;
originally announced March 2022.
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Breakdown of bulk-projected isotropy in surface electronic states of topological Kondo insulator SmB$_6$(001)
Authors:
Yoshiyuki Ohtsubo,
Toru Nakaya,
Takuto Nakamura,
Patrick Le Fèvre,
François Bertran,
Fumitoshi Iga,
Shin-Ichi Kimura
Abstract:
The topology and spin-orbital polarization of two-dimensional (2D) surface electronic states have been extensively studied in this decade. One major interest in them is their close relationship with the parities of the bulk (3D) electronic states. In this context, the surface is often regarded as a simple truncation of the bulk crystal. Here we show breakdown of the bulk-related in-plane rotation…
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The topology and spin-orbital polarization of two-dimensional (2D) surface electronic states have been extensively studied in this decade. One major interest in them is their close relationship with the parities of the bulk (3D) electronic states. In this context, the surface is often regarded as a simple truncation of the bulk crystal. Here we show breakdown of the bulk-related in-plane rotation symmetry in the topological surface states (TSSs) of the Kondo insulator SmB$_6$. Angle-resolved photoelectron spectroscopy (ARPES) performed on the vicinal SmB$_6$(001)-$p$(2$\times$2) surface showed that TSSs are anisotropic and that the Fermi contour lacks the fourfold rotation symmetry maintained in the bulk. This result emphasizes the important role of the surface atomic structure even in TSSs. Moreover, it suggests that the engineering of surface atomic structure could provide a new pathway to tailor various properties among TSSs, such as anisotropic surface conductivity, nesting of surface Fermi contours, or the number and position of van Hove singularities in 2D reciprocal space.
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Submitted 21 August, 2022; v1 submitted 12 February, 2022;
originally announced February 2022.
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Valence state determines the band magnetocrystalline anisotropy in 2D rare-earth/noble-metal compounds
Authors:
M. Blanco-Rey,
R. Castrillo-Bodero,
K. Ali,
P. Gargiani,
F. Bertran,
P. M. Sheverdyaeva,
J. E. Ortega,
L. Fernandez,
F. Schiller
Abstract:
In intermetallic compounds with zero-orbital momentum ($L=0$) the magnetic anisotropy and the electronic band structure are interconnected. Here, we investigate this connection on divalent Eu and trivalent Gd intermetallic compounds. We find by X-ray magnetic circular dichroism an out-of-plane easy magetization axis in 2D atom-thick EuAu$_2$. Angle-resolved photoemission and density-functional the…
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In intermetallic compounds with zero-orbital momentum ($L=0$) the magnetic anisotropy and the electronic band structure are interconnected. Here, we investigate this connection on divalent Eu and trivalent Gd intermetallic compounds. We find by X-ray magnetic circular dichroism an out-of-plane easy magetization axis in 2D atom-thick EuAu$_2$. Angle-resolved photoemission and density-functional theory prove that this is due to strong $f-d$ band hybridization and Eu$^{2+}$ valence. In contrast, the easy in-plane magnetization of the structurally-equivalent GdAu$_2$ is ruled by spin-orbit-split $d$-bands, notably Weyl nodal lines, occupied in the Gd$^{3+}$ state. Regardless of the $L$ value, we predict a similar itinerant electron contribution to the anisotropy of analogous compounds.
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Submitted 25 January, 2022; v1 submitted 14 September, 2021;
originally announced September 2021.
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Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases
Authors:
Luis M. Vicente-Arche,
Julien Bréhin,
Sara Varotto,
Maxen Cosset-Cheneau,
Srijani Mallik,
Raphaël Salazar,
Paul Noël,
Diogo Castro Vaz,
Felix Trier,
Suvam Bhattacharya,
Anke Sander,
Patrick Le Fèvre,
François Bertran,
Guilhem Saiz,
Gerbold Ménard,
Nicolas Bergeal,
Agnès Barthélémy,
Hai Li,
Chia-Ching Lin,
Dmitri E. Nikonov,
Ian A. Young,
Julien Rault,
Laurent Vila,
Jean-Philippe Attané,
Manuel Bibes
Abstract:
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an…
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Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices.
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Submitted 17 August, 2021;
originally announced August 2021.
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Design not Lost in Translation: A Case Study of an Intimate-Space Socially Assistive Robot for Emotion Regulation
Authors:
Katherine Isbister,
Peter Cottrell,
Alessia Cecchet,
Ella Dagan,
Nikki Theofanopoulou,
Ferran Altarriba Bertran,
Aaron J. Horowitz,
Nick Mead,
Joel B. Schwartz,
Petr Slovak
Abstract:
We present a Research-through-Design case study of the design and development of an intimate-space tangible device perhaps best understood as a socially assistive robot, aimed at scaffolding children's efforts at emotional regulation. This case study covers the initial research device development, as well as knowledge transfer to a product development company towards translating the research into…
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We present a Research-through-Design case study of the design and development of an intimate-space tangible device perhaps best understood as a socially assistive robot, aimed at scaffolding children's efforts at emotional regulation. This case study covers the initial research device development, as well as knowledge transfer to a product development company towards translating the research into a workable commercial product that could also serve as a robust research product for field trials. Key contributions to the literature include: 1. sharing of lessons learned from the knowledge transfer process that can be useful to others interested in developing robust products, whether commercial or research, that preserve design values, while allowing for large scale deployment and research; 2. articulation of a design space in HCI/HRI--Human Robot Interaction--of intimate space socially assistive robots, with the current artifact as a central exemplar, contextualized alongside other related HRI artifacts.
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Submitted 22 April, 2021;
originally announced April 2021.
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Origin of the different electronic structure of Rh- and Ru-doped Sr2IrO4
Authors:
Véronique Brouet,
Paul Foulquier,
Alex Louat,
François Bertran,
Patrick Le Fèvre,
Julien E. Rault,
Dorothée Colson
Abstract:
One way to induce insulator to metal transitions in the spin-orbit Mott insulator Sr2IrO4 is to substitute iridium with transition metals (Ru, Rh). However, this creates intriguing inhomogeneous metallic states, which cannot be described by a simple doping effect. We detail the electronic structure of the Ru-doped case with angle-resolved photoemission and show that, contrary to Rh, it cannot be c…
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One way to induce insulator to metal transitions in the spin-orbit Mott insulator Sr2IrO4 is to substitute iridium with transition metals (Ru, Rh). However, this creates intriguing inhomogeneous metallic states, which cannot be described by a simple doping effect. We detail the electronic structure of the Ru-doped case with angle-resolved photoemission and show that, contrary to Rh, it cannot be connected to the undoped case by a rigid shift. We further identify bands below $E_F$ coexisting with the metallic ones that we assign to non-bonding Ir sites. We rationalize the differences between Rh and Ru by a different hybridization with oxygen, which mediates the coupling to Ir and sensitively affects the effective doping. We argue that the spin-orbit coupling does not control neither the charge transfer nor the transition threshold.
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Submitted 4 March, 2021;
originally announced March 2021.
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Universal Fabrication of Two-Dimensional Electron Systems in Functional Oxides
Authors:
Tobias Chris Rödel,
Franck Fortuna,
Shamashis Sengupta,
Emmanouil Frantzeskakis,
Patrick Le Fèvre,
François Bertran,
Bernard Mercey,
Sylvia Matzen,
Guillaume Agnus,
Thomas Maroutian,
Philippe Lecoeur,
Andrés Felipe~Santander-Syro
Abstract:
Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO$_3$-based heterostructures, are hampered by the need of growing complex oxide over-layers thicker than 2~nm using evolved techniques. This work shows that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs…
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Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO$_3$-based heterostructures, are hampered by the need of growing complex oxide over-layers thicker than 2~nm using evolved techniques. This work shows that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs in numerous oxides.
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Submitted 15 February, 2021;
originally announced February 2021.
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Photoemission signature of momentum-dependent hybridization in CeCoIn$_5$
Authors:
R. Kurleto,
M. Fidrysiak,
L. Nicolaï,
J. Minár,
M. Rosmus,
Ł. Walczak,
A. Tejeda,
J. E. Rault,
F. Bertran,
A. P. Kądzielawa,
D. Legut,
D. Gnida,
D. Kaczorowski,
K. Kissner,
F. Reinert,
J. Spałek,
P. Starowicz
Abstract:
Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-…
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Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-$4f$ resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining $f$-electron character when approaching Fermi energy. We have also observed a considerable variation of $f$-electron spectral weight at $E_F$, which is normally determined by both matrix element effects and wave vector dependent $c$-$f$ hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of $4f$-electron enhanced spectral intensity at $E_F$ around $\barΓ$ and $\bar{M}$ points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of $4f$-electron density for a range of values of the parameters used in the model.
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Submitted 4 September, 2021; v1 submitted 14 January, 2021;
originally announced January 2021.
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Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
T. Pierron,
C. González,
M. Sicot,
B. Kierren,
L. Moreau,
J. E. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscop…
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Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscopy and rationalise with the help of density functional theory calculations. We discover dispersing bands related to electronic delocalisation within the top and bottom planes of the material, with two linear crossings reminiscent of those predicted in bilayer AA-stacked graphene, and semi-flat bands stemming from the chemical bridges between the two planes. This band structure is robust against exposure to air, and can be controled by exposure to oxygen. We provide an experimental lower-estimate of the band gap size of 5 eV and predict a full gap of 7.36 eV using density functional theory calculations.
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Submitted 6 May, 2021; v1 submitted 29 November, 2020;
originally announced November 2020.
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Fermi surface and kink structures in Sr$_{4}$Ru$_{3}$O$_{10}$ revealed by synchrotron-based ARPES
Authors:
Prosper Ngabonziza,
Emanuela Carleschi,
Volodymyr Zabolotnyy,
Amina Taleb-Ibrahimi,
François Bertran,
Rosalba Fittipaldi,
Veronica Granata,
Mario Cuoco,
Antonio Vecchione,
Bryan Patrick Doyle
Abstract:
The low-energy electronic structure, including the Fermi surface topology, of the itinerant metamagnet Sr$_{4}$Ru$_{3}$O$_{10}$ is investigated for the first time by synchrotron-based angle-resolved photoemission. Well-defined quasiparticle band dispersions with matrix element dependencies on photon energy or photon polarization are presented. Four bands crossing the Fermi-level, giving rise to fo…
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The low-energy electronic structure, including the Fermi surface topology, of the itinerant metamagnet Sr$_{4}$Ru$_{3}$O$_{10}$ is investigated for the first time by synchrotron-based angle-resolved photoemission. Well-defined quasiparticle band dispersions with matrix element dependencies on photon energy or photon polarization are presented. Four bands crossing the Fermi-level, giving rise to four Fermi surface sheets are resolved; and their complete topography, effective mass as well as their electron and hole character are determined. These data reveal the presence of kink structures in the near-Fermi-level band dispersion, with energies ranging from 30 meV to 69 meV. Together with previously reported Raman spectroscopy and lattice dynamic calculation studies, the data suggest that these kinks originate from strong electron-phonon coupling present in Sr$_{4}$Ru$_{3}$O$_{10}$. Considering that the kink structures of Sr$_{4}$Ru$_{3}$O$_{10}$ are similar to those of the other three members of the Ruddlesden Popper structured ruthenates, the possible universality of strong coupling of electrons to oxygen-related phonons in Sr$_{n+1}$Ru$_{n}$O$_{3n+1}$ compounds is proposed.
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Submitted 19 November, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2$\times$1)
Authors:
Yoshiyuki Ohtsubo,
Naoki Tokumasu,
Hiroshi Watanabe,
Takuto Nakamura,
Patrick Le Fèvre,
François Bertran,
Masaki Imamura,
Isamu Yamamoto,
Junpei Azuma,
Kazutoshi Takahashi,
Shin-ichi Kimura
Abstract:
Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the pr…
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Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the projected bulk bandgap. Circular dichroism of two-photon ARPES and density-functional-theory calculation indicate clear spin and orbital polarization of the surface states consistent with the giant sizes of Rashba-type SOI, derived from the strong contribution of heavy Bi atoms. The surface conduction band above $E_{\rm F}$ forms a nearly straight constant-energy contour, suggesting its suitability for application in further studies of one-dimensional electronic systems with strong SOI. A tight-binding model calculation based on the obtained surface electronic structure successfully reproduces the surface band dispersions and predicts possible one- to two-dimensional crossover in the temperature range of 60--100~K.
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Submitted 3 June, 2020; v1 submitted 17 February, 2020;
originally announced February 2020.
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Tunable two-dimensional electron system at the (110) surface of SnO$_2$
Authors:
J. Dai,
E. Frantzeskakis,
F. Fortuna,
P. Lömker,
R. Yukawa,
M. Thees,
S. Sengupta,
P. Le Fèvre,
F. Bertran,
J. E. Rault,
K. Horiba,
M. Müller,
H. Kumigashira,
A. F. Santander-Syro
Abstract:
We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalyt…
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We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of $n$-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band.
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Submitted 16 February, 2020;
originally announced February 2020.
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Engineering Co$_2$MnAl$_x$Si$_{1-x}$ Heusler compounds as a model system to correlate spin polarization, intrinsic Gilbert damping and ultrafast demagnetization
Authors:
C. Guillemard,
W. Zhang,
G. Malinowski,
C. de Melo,
J. Gorchon,
S. Petit-Watelot,
J. Ghanbaja,
S. Mangin,
P. Le Fèvre,
F. Bertran,
S. Andrieu
Abstract:
Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond time scale. Here, we use engineered Co2MnAlxSi1-x Heusler compounds to a…
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Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond time scale. Here, we use engineered Co2MnAlxSi1-x Heusler compounds to adjust the degree of spin polarization P from 60 to 100% and investigate how it correlates with the damping. We demonstrate experimentally that the damping decreases when increasing the spin polarization from 1.1 10-3 for Co2MnAl with 63% spin polarization to an ultra-low value of 4.10-4 for the half-metal magnet Co2MnSi. This allows us investigating the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1-P and as a consequence to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, our high quality Heusler compounds allow controlling the band structure and therefore the channel for spin angular momentum dissipation.
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Submitted 7 February, 2020;
originally announced February 2020.
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Electronic reconstruction forming a $C_2$-symmetric Dirac semimetal in Ca$_3$Ru$_2$O$_7$
Authors:
M. Horio,
Q. Wang,
V. Granata,
K. P. Kramer,
Y. Sassa,
S. Jöhr,
D. Sutter,
A. Bold,
L. Das,
Y. Xu,
R. Frison,
R. Fittipaldi,
T. K. Kim,
C. Cacho,
J. E. Rault,
P. Le Fèvre,
F. Bertran,
N. C. Plumb,
M. Shi,
A. Vecchione,
M. H. Fischer,
J. Chang
Abstract:
Electronic band structures in solids stem from a periodic potential reflecting the structure of either the crystal lattice or an electronic order. In the stoichiometric ruthenate Ca$_3$Ru$_2$O$_7$, numerous Fermi surface sensitive probes indicate a low-temperature electronic reconstruction. Yet, the causality and the reconstructed band structure remain unsolved. Here, we show by angle-resolved pho…
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Electronic band structures in solids stem from a periodic potential reflecting the structure of either the crystal lattice or an electronic order. In the stoichiometric ruthenate Ca$_3$Ru$_2$O$_7$, numerous Fermi surface sensitive probes indicate a low-temperature electronic reconstruction. Yet, the causality and the reconstructed band structure remain unsolved. Here, we show by angle-resolved photoemission spectroscopy, how in Ca$_3$Ru$_2$O$_7$ a $C_2$-symmetric massive Dirac semimetal is realized through a Brillouin-zone preserving electronic reconstruction. This Dirac semimetal emerges in a two-stage transition upon cooling. The Dirac point and band velocities are consistent with constraints set by quantum oscillation, thermodynamic, and transport experiments, suggesting that the complete Fermi surface is resolved. The reconstructed structure -- incompatible with translational-symmetry-breaking density waves -- serves as an important test for band structure calculations of correlated electron systems.
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Submitted 19 March, 2021; v1 submitted 27 November, 2019;
originally announced November 2019.
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Weyl-like points from band inversions of spin-polarised surface states in NbGeSb
Authors:
I. Marković,
C. A. Hooley,
O. J. Clark,
F. Mazzola,
M. D. Watson,
J. M. Riley,
K. Volckaert,
K. Underwood,
M. S. Dyer,
P. A. E. Murgatroyd,
K. J. Murphy,
P. Le Fèvre,
F. Bertran,
J. Fujii,
I. Vobornik,
S. Wu,
T. Okuda,
J. Alaria,
P. D. C. King
Abstract:
Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by al…
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Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by aliovalent substitution of Nb for Zr and Sb for S in the ZrSiS family of nonsymmorphic semimetals. Using angle-resolved photoemission and density-functional theory, we show how two pairs of surface states, known from ZrSiS, are driven to intersect each other in the vicinity of the Fermi level in NbGeSb, as well as to develop pronounced spin-orbit mediated spin splittings. We demonstrate how mirror symmetry leads to protected crossing points in the resulting spin-orbital entangled surface band structure, thereby stabilising surface state analogues of three-dimensional Weyl points. More generally, our observations suggest new opportunities for engineering topologically and symmetry-protected states via band inversions of surface states.
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Submitted 19 November, 2019;
originally announced November 2019.
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Fermi level tuning of one-dimensional giant Rashba system on a semiconductor substrate: Bi/GaSb(110)-(2x1)
Authors:
Takuto Nakamura,
Yoshiyuki Ohtsubo,
Naoki Tokumasu,
Patrick Le Fèvre,
François Bertran,
Shin-ichiro Ideta,
Kiyohisa Tanaka,
Kenta Kuroda,
Koichiro Yaji,
Ayumi Harasawa,
Shik Shin,
Fumio Komori,
Shin-ichi Kimura
Abstract:
We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $α_{\rm R}$ of 4.1 and 2.6 eVÅ\ at the…
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We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $α_{\rm R}$ of 4.1 and 2.6 eVÅ\ at the $\barΓ$ and $\bar{\rm Y}$ points of the surface Brillouin zone, respectively. The Fermi level of the surface electronic state is tuned in situ by element-selective Ar-ion sputtering on the GaSb substrate. The giant Rashba-type spin splitting with switchable metallic/semiconducting character on semiconductor substrate makes this system a promising candidate for future researches in low-dimensional spintronic phenomena.
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Submitted 2 December, 2019; v1 submitted 29 September, 2019;
originally announced September 2019.
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ARPES study of orbital characters, symmetry breakings and pseudogaps in doped and pure Sr2IrO4
Authors:
Alex Louat,
Benjamin Lenz,
Silke Biermann,
Cyril Martins,
François Bertran,
Patrick Le Fèvre,
Julien E. Rault,
Fabrice Bert,
Véronique Brouet
Abstract:
Sr2IrO4 is characterized by a large spin-orbit coupling, which gives rise to bands with strongly entangled spin and orbital characters, called J=1/2 and J=3/2. We use light-polarization dependent ARPES to study directly the orbital character of these bands and fully map out their dispersion. We observe bands in very good agreement with our cluster dynamical mean-field theory calculations. We show…
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Sr2IrO4 is characterized by a large spin-orbit coupling, which gives rise to bands with strongly entangled spin and orbital characters, called J=1/2 and J=3/2. We use light-polarization dependent ARPES to study directly the orbital character of these bands and fully map out their dispersion. We observe bands in very good agreement with our cluster dynamical mean-field theory calculations. We show that the J=1/2 band, the closest to the Fermi level Ef, is dominated by dxz character along kx and dyz along ky. This is actually in agreement with an isotropic J=1/2 character on average, but this large orbital dependence in k-space was mostly overlooked before. It gives rise to strong modulations of the ARPES intensity that we explain and carefully take into account to compare dispersions in equivalent directions of the Brillouin zone. Although the latter dispersions look different at first, suggesting possible symmetry breakings, they are found essentially similar, once corrected for these intensity variations. In particular, the pseudogap-like features close to the $X$ point appearing in the nearly metallic 15% Rh-doped Sr2IrO4 strongly depend on experimental conditions. We reveal that there is nevertheless an energy scale of 30meV below which spectral weight is suppressed, independent of the experimental conditions, which gives a reliable basis to analyze this behavior. We suggest it is caused by disorder.
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Submitted 2 July, 2019;
originally announced July 2019.
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Ultra-low magnetic damping in Co 2 Mn-based Heusler compounds: promising materials for spintronic
Authors:
C Guillemard,
S. Petit-Watelot,
L. Pasquier,
D. Pierre,
J. Ghanbaja,
J-C Rojas-Sánchez,
A. Bataille,
J. Rault,
P Le Fèvre,
F. Bertran,
Stephane Andrieu
Abstract:
The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in th…
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The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in the gap and spin polarization can be tuned and the consequence on magnetization dynamics analyzed. The experimental results allow us to directly explore the interplay of spin polarization, spin gap, Fermi energy position and the magnetic damping obtained in these films, together with ab initio calculation predictions. The ultra-low magnetic damping coefficients measured in the range 4.1 10-4-9 10-4 for Co 2 MnSi, Ge, Sn, Sb are the lowest values obtained on a conductive layer and offers a clear experimental demonstration of theoretical predictions on Half-Metal Magnetic Heusler compounds and a pathway for future materials design.
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Submitted 22 May, 2019;
originally announced May 2019.
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Temperature-driven modification of surface electronic structure on bismuth, a topological border material
Authors:
Y. Ohtsubo,
Y. Yamashita,
J. Kishi,
S. Ideta,
K. Tanaka,
H. Yamane,
J. E. Rault,
P. Le Fèvre,
F. Bertran,
S. Kimura
Abstract:
Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the…
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Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the $\bar{M}$ point of the surface Brillouin zone (SBZ). In contrast, the same branch merged to the projected bulk valence bands at high temperature (400 K). Such behavior could be interpreted as a topological phase transition driven by the temperature, which might be applicable for future spin-thermoelectric devices. We discuss the possible mechanisms to cause such transition, such as the thermal lattice distortion and electron-phonon coupling.
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Submitted 17 February, 2019;
originally announced February 2019.
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Electronic band structure of ultimately thin silicon oxide on Ru(0001)
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
S. Lisi,
T. Pierron,
C. González Pascual,
M. Sicot,
B. Kierren,
D. Malterre,
J. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, w…
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Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semi-flat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.
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Submitted 12 February, 2019;
originally announced February 2019.
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Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals
Authors:
Hugo Henck,
Debora Pierucci,
Jihene Zribi,
Federico Bisti,
Evangelos Papalazarou,
Jean Christophe Girard,
Julien Chaste,
Francois Bertran,
Patrick Le Fevre,
Fausto Sirotti,
Luca Perfetti,
Christine Giorgetti,
Abhay Shukla,
Julien E. Rault,
Abdelkarim Ouerghi
Abstract:
Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depend…
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Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibits a direct band gap of about 1.25 eV located at the Gamma point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. technologies. In fact, a hole effective mass of about m/m0 = -0.95 gammaK direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III-VI semiconductors for electronic and photonic
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Submitted 24 January, 2019;
originally announced January 2019.
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Coherent and incoherent bands in La and Rh doped Sr3Ir2O7
Authors:
V. Brouet,
L. Serrier-Garcia,
A. Louat,
L. Fruchter,
F. Bertran,
P. Le Fevre,
J. Rault,
A Forget,
D. Colson
Abstract:
In Sr2IrO4 and Sr3Ir2O7, correlations, magnetism and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here Angle-Resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr3Ir2O7, obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a functi…
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In Sr2IrO4 and Sr3Ir2O7, correlations, magnetism and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here Angle-Resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr3Ir2O7, obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a function of doping of the gap between a lower and upper band on both sides of the Fermi level, from 0.2eV to 0.05eV. Although these two bands have a counterpart in band structure calculations, they are characterized by a very different degree of coherence. The upper band exhibits clear quasiparticle peaks, while the lower band is very broad and loses weight as a function of doping. Moreover, their ARPES spectral weights obey different periodicities, reinforcing the idea of their different nature. We argue that a very similar situation occurs in Sr2IrO4 and conclude that the physics of the two families is essentially the same.
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Submitted 11 December, 2018; v1 submitted 9 October, 2018;
originally announced October 2018.
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ARPES and transport studies of the elemental topological insulator $α$-Sn
Authors:
Quentin Barbedienne,
Julien Varignon,
Nicolas Reyren,
Alain Marty,
Celine Vergnaud,
Matthieu Jamet,
Carmen Gomez-Carbonell,
Aristide Lemaître,
Patrick Le Fèvre,
François Bertran,
Amina Taleb-Ibrahimi,
Henri Jaffrès,
Jean-Marie George,
Albert Fert
Abstract:
Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion clo…
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Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion close to the Fermi level in thin (0\,0\,1)-oriented epitaxially strained films of $α$-Sn, for different film thicknesses as well as for different capping layers (Al, AlO$_x$ and MgO). Indeed a proper capping layer is necessary to be able to use $α$-Sn surface states for spintronics applications. In contrast with free surfaces or surfaces coated with Ag, coating the $α$-Sn surface with Al or AlO$_x$ leads to a drop of the Fermi level below the Dirac point, an important consequence for transport is the presence of bulk states at the Fermi level. $α$-Sn films coated by AlO$_x$ are studied by electrical magnetotransport: despite clear evidence of surface states revealed by Shubnikov-de Haas oscillations, an important part of the magneto-transport properties is governed by "bulk" electronic states attributed to the $Γ8$ band, as suggested by {\it ab-initio} calculations.
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Submitted 30 November, 2018; v1 submitted 30 July, 2018;
originally announced July 2018.
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Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
Authors:
Debora Pierucci,
Jihene Zribi,
Hugo Henck,
Julien Chaste,
Mathieu G. Silly,
François Bertran,
Patrick Le Fevre,
Bernard Gil,
Alex Summerfield,
Peter H. Beton,
Sergei V. Novikov,
Guillaume Cassabois,
Julien E. Rault,
Abdelkarim Ouerghi
Abstract:
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflec…
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We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.
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Submitted 19 June, 2018;
originally announced June 2018.
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Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2
Authors:
S. Xing,
J. Mansart,
V. Brouet,
M. Sicot,
Y. Fagot-Revurat,
B. Kierren,
P. Le Fèvre,
F. Bertran,
J. E. Rault,
U. B. Paramanik,
Z. Hossain,
A. Chainani,
D. Malterre
Abstract:
The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As…
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The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$. The near E$_F$ Fe 3d-derived band dispersions near the $Γ$ and X high-symmetry points show changes due to Ir substitution, but the FS topology is preserved. From momentum dependent measurements of the superconducting gap measured at T = 5 K, we estimate an essentially isotropic s-wave gap ($Δ\sim5.25\pm 0.25$ meV), indicative of strong-coupling superconductivity with 2$Δ$/k$_{B}$T$_{c}\simeq$ 5.8. The gap gets closed at temperatures T $\geq$ 10 K, and this is attributed to the resistive phase which sets in at T$_M$ = 18 K due to the Eu$^{2+}$-derived magnetic order. The modifications of the FS with Ir substitution clearly indicates an effective hole doping with respect to the parent compound.
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Submitted 18 June, 2018;
originally announced June 2018.
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Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures
Authors:
Hugo Henck,
Zeineb Ben Aziza,
Debora Pierucci,
Feriel Laourine,
Francesco Reale,
Pawel Palczynski,
Julien Chaste,
Mathieu G. Silly,
François Bertran,
Patrick Le Fevre,
Emmanuel Lhuillier,
Taro Wakamura,
Cecilia Mattevi,
Julien E. Rault,
Matteo Calandra,
Abdelkarim Ouerghi
Abstract:
Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-res…
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Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements (ARPES) and Density Functional Theory (DFT) calculations. The results show good electronic properties as well as well-defined band arising from the strong splitting of the single layer WS2 valence band at K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single layer WS2. . Our results provide an important reference for future studies of electronic properties of WS2 and its applications in valleytronic devices.
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Submitted 13 June, 2018;
originally announced June 2018.
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Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)
Authors:
Hugo Henck,
Zeineb Ben Aziza,
Olivia Zill,
Debora Pierucci,
Carl H. Naylor,
Mathieu G. Silly,
Noelle Gogneau,
Fabrice Oehler,
Stephane Collin,
Julien Brault,
Fausto Sirotti,
François Bertran,
Patrick Le Fèvre,
Stéphane Berciaud,
A. T Charlie Johnson,
Emmanuel Lhuillier,
Julien E. Rault,
Abdelkarim Ouerghi
Abstract:
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray p…
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Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed; which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and -0.51 eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV.
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Submitted 8 June, 2018;
originally announced June 2018.
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Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide
Authors:
Debora Pierucci,
Hugo Henck,
Zeineb Ben Aziza,
Carl H. Naylor,
A. Balan,
Julien E. Rault,
M. G. Silly,
Yannick J. Dappe,
François Bertran,
Patrick Le Fevre,
F. Sirotti,
A. T Charlie Johnson,
Abdelkarim Ouerghi
Abstract:
Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic…
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Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2 flakes. The successful incorporation of hydrogen in MoS2 leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2 confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2 hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.
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Submitted 8 June, 2018; v1 submitted 7 June, 2018;
originally announced June 2018.
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High-density two-dimensional electron system induced by oxygen vacancies in ZnO
Authors:
T. C. Rödel,
J. Dai,
F. Fortuna,
E. Frantzeskakis,
P. Le Fèvre,
F. Bertran,
M. Kobayashi,
R. Yukawa,
T. Mitsuhashi,
M. Kitamura,
K. Horiba,
H. Kumigashira,
A. F. Santander-Syro
Abstract:
We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the…
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We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two $s$-type subbands, that we compare to the $d$-like 2DESs in titanates, with clear signatures of many-body interactions that we analyze through a self-consistent extraction of the system self-energy and a modeling as a coupling of a 2D Fermi liquid with a Debye distribution of phonons.
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Submitted 19 February, 2018;
originally announced February 2018.
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Co/Ni multilayers for spintronics: high spin-polarization and tunable magnetic anisotropy
Authors:
S. Andrieu,
T. Hauet,
M. Gottwald,
A. Rajanikanth,
L. Calmels,
A. M. Bataille,
F. Montaigne,
S. Mangin,
E. Otero,
P. Ohresser,
P. Le Fevre,
F. Bertran,
A. Resta,
A. Vlad,
A. Coati,
Y. Garreau
Abstract:
In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)…
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In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)] single-crystalline stacks grown by molecular beam epitaxy.
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Submitted 6 February, 2018;
originally announced February 2018.
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Non-local Coulomb correlations in pure and electron-doped ${\mathrm{Sr}}_{2}{\mathrm{IrO}}_{4}$: spectral functions, Fermi surface and pseudogap-like spectral weight distributions from oriented cluster dynamical mean field theory
Authors:
Cyril Martins,
Benjamin Lenz,
Luca Perfetti,
Véronique Brouet,
François Bertran,
Silke Biermann
Abstract:
We address the role of non-local Coulomb correlations and short-range magnetic fluctuations in the high-temperature phase of Sr$_2$IrO$_4$ within state-of-the-art spectroscopic and first-principles theoretical methods. Introducing a novel cluster dynamical mean field scheme, we compute momentum-resolved spectral functions, which we find to be in excellent agreement with angle-resolved photoemissio…
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We address the role of non-local Coulomb correlations and short-range magnetic fluctuations in the high-temperature phase of Sr$_2$IrO$_4$ within state-of-the-art spectroscopic and first-principles theoretical methods. Introducing a novel cluster dynamical mean field scheme, we compute momentum-resolved spectral functions, which we find to be in excellent agreement with angle-resolved photoemission spectra. We show that while short-range antiferromagnetic fluctuations are crucial to account for the electronic properties of the material even in the high-temperature paramagnetic phase, long-range magnetic order is not a necessary ingredient of the insulating state. Upon doping, an exotic metallic state is generated, exhibiting cuprate-like pseudo-gap spectral properties, for which we propose a surprisingly simple theoretical mechanism.
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Submitted 26 January, 2018;
originally announced January 2018.
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Atomic-layer-resolved composition and electronic structure of the cuprate Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from soft x-ray standing-wave photoemission
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Giuseppina Conti,
Shu-Ting Pi,
Luca Moreschini,
Aaron Bostwick,
Julia Meyer-Ilse,
Eric Gullikson,
Jeffrey B. Kortright,
Slavomir Nemšák,
Julien E. Rault,
Patrick Le Fèvre,
François Bertran,
Andrés F. Santander-Syro,
Ivan A. Vartanyants,
Warren E. Pickett,
Romuald Saint-Martin,
Amina Taleb,
Charles S. Fadley
Abstract:
A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties…
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A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties. Applying SW photoemission to Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ yields the depth distribution of atomic composition and the layer-resolved densities of states. We detect significant Ca presence in the SrO layers and oxygen bonding to three different cations. The layer-resolved valence electronic structure is found to be strongly influenced by the supermodulation structure--as determined by comparison to DFT calculations, by Ca-Sr intermixing, and by the Cu 3d-3d Coulomb interaction, further clarifying the complex interactions in this prototypical cuprate. Measurements of this type for other quasi-two-dimensional materials with large-c represent a promising future direction.
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Submitted 24 September, 2018; v1 submitted 16 January, 2018;
originally announced January 2018.