Showing 1–39 of 39 results for author: Cario, L

NbSe$_{2}$'s charge density wave collapse in the (LaSe)$_{1.14}$(NbSe$_{2}$)$_{2}$ misfit layer compound

Authors: Ludovica Zullo, Grégory Setnikar, Amit Pawbake, Tristan Cren, Christophe Brun, Justine Cordiez, Shunsuke Sasaki, Laurent Cario, Giovanni Marini, Matteo Calandra, Marie-Aude Méasson

Abstract: Misfit layer compounds, heterostructures composed by a regular alternating stacking of rocksalt monochalcogenides bilayers and few-layer transition metal dichalchogenides, are an emergent platform to investigate highly doped transition metal dichalcogenides. Among them, (LaSe)$_{1.14}$(NbSe$_2$)$_2$ displays Ising superconductivity, while the presence of a charge density wave (CDW) in the material… ▽ More Misfit layer compounds, heterostructures composed by a regular alternating stacking of rocksalt monochalcogenides bilayers and few-layer transition metal dichalchogenides, are an emergent platform to investigate highly doped transition metal dichalcogenides. Among them, (LaSe)$_{1.14}$(NbSe$_2$)$_2$ displays Ising superconductivity, while the presence of a charge density wave (CDW) in the material is still under debate. Here, by using polarized Raman spectroscopy and first-principles calculations, we show that NbSe$_2$ undergoes a doping-driven collapse of the CDW ordering within the misfit, and no signature of the CDW is detected down to 8~K. We provide a complete experimental and theoretical description of the lattice dynamics of this misfit compound. We show that the vibrational properties are obtained from those of the two subunits, namely the LaSe unit and the NbSe$_2$ bilayer, in the presence of a suitable field-effect doping, and then highlight the 2D nature of the lattice dynamics of NbSe$_2$ within the (LaSe)$_{1.14}$(NbSe$_2$)$_2$ 3D structure. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: First version of the manuscript (before revisions)

Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS$_2$

Authors: Jingwei Dong, Weiyan Qi, Dongbin Shin, Laurent Cario, Zhesheng Chen, Romain Grasset, Davide Boschetto, Mateusz Weis, Pierrick Lample, Ernest Pastor, Tobias Ritschel, Marino Marsi, Amina Taleb, Noejung Park, Angel Rubio, Evangelos Papalazarou, Luca Perfetti

Abstract: This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top of a metallic bulk. The weaker screening of Coulomb repulsion and stiffer Charge Density Wave (CDW) explain such resilience of a correlated insulator in the topm… ▽ More This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top of a metallic bulk. The weaker screening of Coulomb repulsion and stiffer Charge Density Wave (CDW) explain such resilience of a correlated insulator in the topmost layers. Both time resolved ARPES and transient reflectivity are employed to investigate the dynamics of electrons and CDW collective motion. It follows that the amplitude mode is always stiffer at the surface and displays variable coupling to the Mott-Peierls band, stronger in the low temperature phase and weaker in the intermediate one. △ Less

Submitted 31 October, 2023; v1 submitted 12 July, 2023; originally announced July 2023.

Protection of Ising spin-orbit coupling in bulk misfit superconductors

Authors: Tomas Samuely, Darshana Wickramaratne, Martin Gmitra, Thomas Jaouen, Ondrej Šofranko, Dominik Volavka, Marek Kuzmiak, Jozef Haniš, Pavol Szabó, Claude Monney, Geoffroy Kremer, Patrick Le Fèvre, François Bertran, Tristan Cren, Shunsuke Sasaki, Laurent Cario, Matteo Calandra, Igor I. Mazin, Peter Samuely

Abstract: Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plan… ▽ More Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plane. Bulk NbSe2 is centrosymmetric and is therefore not an Ising superconductor. We show that bulk misfit compound superconductors, (LaSe)1.14(NbSe2) and (LaSe)1.14(NbSe2)2, comprised of monolayers and bilayers of NbSe2, exhibit unexpected Ising protection with a Pauli-limit violation comparable to monolayer NbSe2, despite formally having inversion symmetry. We study these misfit compounds using complementary experimental methods in combination with first-principles calculations. We propose theoretical mechanisms of how the Ising protection can survive in bulk materials. We show how some of these mechanisms operate in these bulk compounds due to a concerted effect of charge-transfer, defects, reduction of interlayer hopping, and stacking. This highlights how Ising superconductivity can, unexpectedly, arise in bulk materials, and possibly enable the design of bulk superconductors that are resilient to magnetic fields. △ Less

Submitted 6 April, 2023; originally announced April 2023.

Comments: 14 pages, 4 figures, 4 extended data items

Electronic dispersion, correlations and stacking in the photoexcited state of 1T-TaS$_2$

Authors: Jingwei Dong, Dongbin Shin, Ernest Pastor, Tobias Ritschel, Laurent Cario, Zhesheng Chen, Weyain Qi, Romain Grasset, Marino Marsi, Amina Taleb-Ibrahimi, Noejung Park, Angel Rubio, Luca Perfetti, Evangelos Papalazarou

Abstract: Here we perform angle and time-resolved photoelectron spectroscopy on the commensurate Charge Density Wave (CDW) phase of 1T-TaS$_2$. Data with different probe pulse polarization are employed to map the dispersion of electronic states below and above the chemical potential. Upon photoexcitation, the fluctuations of CDW order erase the band dispersion near to the chemical potential and halve the ch… ▽ More Here we perform angle and time-resolved photoelectron spectroscopy on the commensurate Charge Density Wave (CDW) phase of 1T-TaS$_2$. Data with different probe pulse polarization are employed to map the dispersion of electronic states below and above the chemical potential. Upon photoexcitation, the fluctuations of CDW order erase the band dispersion near to the chemical potential and halve the charge gap size. This transient phase sets within half a period of the coherent lattice motion and is favored by strong electronic correlations. The experimental results are compared to Density-Functional Theory (DFT) calculations with a self-consistent evaluation of the Coulomb repulsion. Our simulations indicate that the screening of Coulomb repulsion depends on the stacking order of the TaS$_2$ layers. The entanglement of such degrees of freedom suggest that both the structural order and electronic repulsion are locally modified by the photoinduced CDW fluctuations. △ Less

Submitted 14 June, 2023; v1 submitted 20 October, 2022; originally announced October 2022.

Coherent and incoherent tunneling into YSR states revealed by atomic scale shot-noise spectroscopy

Authors: Umamahesh Thupakula, Vivien Perrin, Alexandra Palacio-Morales, Laurent Cario, Marco Aprili, Pascal Simon, Freek Massee

Abstract: The pair breaking potential of individual magnetic impurities in s-wave superconductors generates localized states inside the superconducting gap commonly referred to as Yu- Shiba-Rusinov (YSR) states whose isolated nature makes them ideal building blocks for artificial structures that may host Majorana fermions. One of the challenges in this endeavor is to understand their intrinsic lifetime,… ▽ More The pair breaking potential of individual magnetic impurities in s-wave superconductors generates localized states inside the superconducting gap commonly referred to as Yu- Shiba-Rusinov (YSR) states whose isolated nature makes them ideal building blocks for artificial structures that may host Majorana fermions. One of the challenges in this endeavor is to understand their intrinsic lifetime, $\hbar/Λ$, which is expected to be limited by the inelastic coupling with the continuum thus leading to decoherence. Here we use shot-noise scanning tunneling microscopy to reveal that electron tunnelling into superconducting 2H-NbSe$_2$ mediated by YSR states is ordered as function of time, as evidenced by a reduction of the noise. Moreover, our data show the concomitant transfer of charges e and 2e, indicating that incoherent single particle and coherent Andreev processes operate simultaneously. From the quantitative agreement between experiment and theory we obtain $Λ$ = 1 $μ$eV $\ll$ $k_BT$ demonstrating that shot-noise can probe energy- and time scales inaccessible by conventional spectroscopy whose resolution is thermally limited. △ Less

Submitted 8 November, 2021; originally announced November 2021.

Comments: 6 pages, 4 figures, Supplementary Information included as ancillary file

Extreme in-plane upper critical magnetic fields of heavily doped quasi-two-dimensional transition metal dichalcogenides

Authors: P. Samuely, P. Szabó, J. Kačmarčík, A. Meerchaut, L. Cario, A. G. M. Jansen, T. Cren, M. Kuzmiak, O. Šofranko, T. Samuely

Abstract: Extreme in-plane upper critical magnetic fields $B_{c2//ab}$ strongly violating the Pauli paramagnetic limit have been observed in the misfit layer $(LaSe)_{1.14}(NbSe_2)$ and $(LaSe)_{1.14}(NbSe_2)_2$ single crystals with $T_c$ = 1.23 K and 5.7 K, respectively. The crystals show a two-dimensional to three-dimensional transition at temperatures slightly below $T_c$ with an upturn in the temperatur… ▽ More Extreme in-plane upper critical magnetic fields $B_{c2//ab}$ strongly violating the Pauli paramagnetic limit have been observed in the misfit layer $(LaSe)_{1.14}(NbSe_2)$ and $(LaSe)_{1.14}(NbSe_2)_2$ single crystals with $T_c$ = 1.23 K and 5.7 K, respectively. The crystals show a two-dimensional to three-dimensional transition at temperatures slightly below $T_c$ with an upturn in the temperature dependence of $B_{c2//ab}$, a temperature dependent huge superconducting anisotropy and a cusplike behavior of the angular dependence of $B_{c2}$. Both misfits are characterized by a strong charge transfer from LaSe to $NbSe_2$. As shown in our previous work, $(LaSe)_{1.14}(NbSe_2)$ is electronically equivalent to the highly doped $NbSe_2$ monolayers. Then, the strong upper critical field can be attributed to the Ising coupling recently discovered in atomically thin transition metal dichalcogenides with strong spin-orbit coupling and a lack of inversion symmetry. A very similar behavior is found in $(LaSe)_{1.14}(NbSe_2)_2$, where the charge transfer is nominally twice as big, which could eventually lead to complete filling of the $NbSe_2$ conduction band and opening superconductivity in LaSe. Whatever the particular superconducting mechanism would be, a common denominator in both misfits is that they behave as a stack of almost decoupled superconducting atomic layers, proving that Ising superconductivity can also exist in bulk materials. △ Less

Submitted 21 December, 2021; v1 submitted 15 July, 2021; originally announced July 2021.

Comments: 7 pages, 3 figures, Supplemental Material

Journal ref: Physical Review B, Vol. 104, 224507 (2021)

Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics

Authors: D. Babich, J. Tranchant, C. Adda, B. Corraze, M. -P. Besland, P. Warnicke, D. Bedau, P. Bertoncini, J. -Y. Mevellec, B. Humbert, J. Rupp, T. Hennen, D. Wouters, R. Llopis, L. Cario, E. Janod

Abstract: Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still… ▽ More Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved μ-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics. △ Less

Submitted 20 October, 2021; v1 submitted 11 May, 2021; originally announced May 2021.

Comments: 14 pages, 5 figures + Supplementary Materials (14 pages, 7 figures)

Misfit layer compounds: a platform for heavily-doped two-dimensional transition metal dichalcogenides

Authors: Raphaël T. Leriche, Alexandra Palacio-Morales, Marco Campetella, Cesare Tresca, Shunsuke Sasaki, Christophe Brun, François Debontridder, Pascal David, Imad Arfaoui, Ondrej Šofranko, Tomas Samuely, Geoffroy Kremer, Claude Monney, Thomas Jaouen, Laurent Cario, Matteo Calandra, Tristan Cren

Abstract: Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric double-layer field-effect transistors (FET). However, for the case of single layer NbSe$_2$, FET doping is limited to $\approx 1\times 10^{14}$ cm$^{-2}$, while a somewha… ▽ More Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric double-layer field-effect transistors (FET). However, for the case of single layer NbSe$_2$, FET doping is limited to $\approx 1\times 10^{14}$ cm$^{-2}$, while a somewhat larger charge injection can be obtained via deposition of K atoms. Here, by performing ARPES, STM, quasiparticle interference measurements, and first principles calculations we show that a misfit compound formed by sandwiching NbSe$_2$ and LaSe layers behaves as a NbSe$_2$ single layer with a rigid doping of $0.55-0.6$ electrons per Nb atom or $\approx 6\times 10^{14}$ cm$^{-2}$. Due to this huge doping, the $3\times3$ charge density wave is replaced by a $2\times2$ order with very short coherence length. As a tremendous number of different misfit compounds can be obtained by sandwiching TMDs layers with rock salt or other layers, our work paves the way to the exploration of heavily doped 2D TMDs over an unprecedented wide range of doping. △ Less

Submitted 23 October, 2020; originally announced October 2020.

Novel $J_{\rm{eff}}$=3/2 Metallic Phase and Unconventional Superconductivity in GaTa$_4$Se$_8$

Authors: Min Yong Jeong, Seo Hyoung Chang, Hyeong Jun Lee, Jae-Hoon Sim, Kyeong Jun Lee, Etienne Janod, Laurent Cario, Ayman Said, Wenli Bi, Philipp Werner, Ara Go, Jungho Kim, Myung Joon Han

Abstract: By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic… ▽ More By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic excitation peak in the RIXS spectrum maintains its destructive quantum interference of $J_{\rm{eff}}$ at the Ta $L_2$-edge up to 10.4 GPa. Our exact diagonalization based DFT+DMFT calculations including spin-orbit coupling also reveal that the $J_{\rm{eff}}=3/2$ character can be clearly identified under high pressure. These results establish the intriguing nature of the correlated metallic magnetic phase, which represents the first confirmed example of $J_{\rm{eff}}$=3/2 moments residing in a metal. They also indicate that the pressure-induced superconductivity is likely unconventional and influenced by these $J_{\rm{eff}}=3/2$ moments. Based on a self-energy analysis, we furthermore propose the possibility of doping-induced superconductivity related to a spin-freezing crossover. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 7 pages, 5 figures (additional 4 pages and 6 figures for supplemental materials)

Journal ref: Phys. Rev. B 103, 081112 (2021)

Periodic surface modulation of $(LaSe)_{1.14}(NbSe_2)$ observed by scanning tunneling microscopy

Authors: Ondrej Šofranko, Raphael Leriche, Alexandra Palacio Morales, Tristan Cren, Shunsuke Sasaki, Laurent Cario, Pavol Szabó, Peter Samuely, Tomas Samuely

Abstract: Fourier transformation of atomically resolved STM topography of $(LaSe)_{1.14}(NbSe_2)$ revealed a surface modulation along the hexagonal surface lattice of $NbSe_2$ layer, but with a two times larger period. We compare it to the modified charge density wave found on plain $NbSe_2$ under strain. Fourier transformation of atomically resolved STM topography of $(LaSe)_{1.14}(NbSe_2)$ revealed a surface modulation along the hexagonal surface lattice of $NbSe_2$ layer, but with a two times larger period. We compare it to the modified charge density wave found on plain $NbSe_2$ under strain. △ Less

Submitted 7 October, 2020; v1 submitted 4 June, 2020; originally announced June 2020.

Comments: Withdrawn due to data re-evaluation

Strain Wave Pathway to Semiconductor-to-Metal Transition revealed by time resolved X-ray powder diffraction

Authors: C. Mariette, M. Lorenc, H. Cailleau, E. Collet, L. Guérin, A. Volte, E. Trzop, R. Bertoni, X. Dong, B. Lépine, O Hernandez, E. Janod, L. Cario, V. Ta Phuoc, S. Ohkoshi, H. Tokoro, L. Patthey, A. Babic, I. Usov, D. Ozerov, L. Sala, S. Ebner, P. Böhler, A Keller, A. Oggenfuss , et al. (20 additional authors not shown)

Abstract: Thanks to the remarkable developments of ultrafast science, one of today's challenges is to modify material state by controlling with a light pulse the coherent motions that connect two different phases. Here we show how strain waves, launched by electronic and structural precursor phenomena, determine a macroscopic transformation pathway for the semiconducting-to-metal transition with large volum… ▽ More Thanks to the remarkable developments of ultrafast science, one of today's challenges is to modify material state by controlling with a light pulse the coherent motions that connect two different phases. Here we show how strain waves, launched by electronic and structural precursor phenomena, determine a macroscopic transformation pathway for the semiconducting-to-metal transition with large volume change in bistable Ti$_3$O$_5$ nanocrystals. Femtosecond powder X-ray diffraction allowed us to quantify the structural deformations associated with the photoinduced phase transition on relevant time scales. We monitored the early intra-cell distortions around absorbing metal dimers, but also long range crystalline deformations dynamically governed by acoustic waves launched at the laser-exposed Ti$_3$O$_5$ surface. We rationalize these observations with a simplified elastic model, demonstrating that a macroscopic transformation occurs concomitantly with the propagating acoustic wavefront on the picosecond timescale, several decades earlier than the subsequent thermal processes governed by heat diffusion. △ Less

Submitted 20 February, 2020; v1 submitted 19 February, 2020; originally announced February 2020.

Comments: 30 pages (including supplementary text), 5 main figures, 9 supplementary figures; corrected author list

Unexplored reactivity of (Sn)2- Oligomers with transition metals in low-temperature solid-state reactions

Authors: Shunsuke Sasaki, Melanie Lesault, Elodie Grange, Etienne Janod, Benoît Corraze, Sylvian Cadars, Maria Teresa Caldes, Catherine Guillot-Deudon, Stéphane Jobic, Laurent Cario

Abstract: Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions… ▽ More Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions in solid state, namely towards elemental metals with a low redox potential that may be oxidized. We recently used this strategy to design, at low temperature and in an orientated manner, materials with 2D infinite layers through the topochemical insertion of copper into preformed precursors containing (S2)2- and/or (Se2)2- dimers (i.e. La2O2S2, Ba2F2S2 and LaSe2). Herein we extend the validity of the concept to the redox activity of (S2)2- and (S3)2- oligomers towards 3d transition metal elements (Cu, Ni, Fe) and highlight the strong relationship between the structures of the precursors, BaS2 and BaS3, and the products, BaCu2S2, BaCu4S3, BaNiS2 and BaFe2S3. Clearly, beyond the natural interest for the chemical reactivity of oligomers to generate compounds, this soft chemistry route may conduct to the rational conception of materials with a predicted crystal structure. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Traces of Charge Density Waves in NbS$_2$

Authors: Maxime Leroux, Laurent Cario, Alexei Bosak, Pierre Rodière

Abstract: Among Transition Metal Dichalcogenides (TMD), NbS$_2$ is often considered as the archetypal compound that does not have a Charge Density Wave (CDW) in any of its polytypes. By comparison, close iso-electronic compounds such as NbSe$_2$, TaS$_2$ and TaSe$_2$ all have CDW in at least one polytype. Here, we report traces of CDW in the 2H polytype of NbS$_2$, using diffuse x-ray scattering measurement… ▽ More Among Transition Metal Dichalcogenides (TMD), NbS$_2$ is often considered as the archetypal compound that does not have a Charge Density Wave (CDW) in any of its polytypes. By comparison, close iso-electronic compounds such as NbSe$_2$, TaS$_2$ and TaSe$_2$ all have CDW in at least one polytype. Here, we report traces of CDW in the 2H polytype of NbS$_2$, using diffuse x-ray scattering measurements at 77\,K and room temperature. We observe 12 extremely weak satellite peaks located at $\pm$13$^\mathrm{o}$ 54' from $\vec{a}^*$ and $\vec{b}^*$ around each Bragg peaks in the $(h,k,0)$ plane. These satellite peaks are commensurate with the lattice via $3\vec{q}-\vec{q}\,'=\vec{a}^*$, where $\vec{q}\,'$ is the 120$^{\circ}$ rotation of $\vec{q}$, and define two chiral $\sqrt{13}\,a\times\sqrt{13}\,a$ superlattices in real space. These commensurate wavevectors and tilt angle are identical to those of the CDW observed in the 1T polytype of TaS$_2$ and TaSe$_2$. To understand this similarity and the faintness of the peaks, we discuss possible sources of local 1T polytype environment in bulk 2H-NbS$_2$ crystals. △ Less

Submitted 21 May, 2018; v1 submitted 25 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. B 97, 195140 (2018)

Relaxation of a Mott-neuron

Authors: Federico Tesler, Coline Adda, Julien Tranchant, Benoit Corraze, Etienne Janod, Laurent Cario, Pablo Stoliar, Marcelo Rozenberg

Abstract: We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a short lived or a long lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic en… ▽ More We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a short lived or a long lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic energy term. We find that by strong electric pulsing the induced metastable phase may become further stabilized by the electro-elastic effect. We present a systematic study of the model by numerical simulations and compare the results to new experiments in Mott insulators of the AM4Q8 family. Our work significantly extends the scope of our recently introduced leaky-integrate-and-fire Mott-neuron [P. Stoliar Adv Mat 2017] to bring new insight on the physical mechanism of its relaxation. This is a key feature for future neuromorphic circuit implementations. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Applied 10, 054001 (2018)

Domain size effects on the dynamics of a charge density wave in 1T-TaS2

Authors: G. Lantz, C. Laulhé, S. Ravy, M. Kubli, M. Savoini, K. Tasca, E. Abreu, V. Esposito, M. Porer, A. Ciavardini, L. Cario, J. Rittmann, P. Beaud, S. L. Johnson

Abstract: Recent experiments have shown that the high temperature incommensurate (I) charge density wave (CDW) phase of 1T-TaS2 can be photoinduced from the lower temperature, nearly commensurate (NC) CDW state. Here we report a time-resolved x-ray diffraction study of the growth process of the photoinduced I-CDW domains. The layered nature of the material results in a marked anisotropy in the size of the p… ▽ More Recent experiments have shown that the high temperature incommensurate (I) charge density wave (CDW) phase of 1T-TaS2 can be photoinduced from the lower temperature, nearly commensurate (NC) CDW state. Here we report a time-resolved x-ray diffraction study of the growth process of the photoinduced I-CDW domains. The layered nature of the material results in a marked anisotropy in the size of the photoinduced domains of the I-phase. These are found to grow self-similarly, their shape remaining unchanged throughout the growth process. The photoinduced dynamics of the newly formed I-CDW phase was probed at various stages of the growth process using a double pump scheme, where a first pump creates I-CDW domains and a second pump excites the newly formed I-CDW state. We observe larger magnitudes of the coherently excited I-CDW amplitude mode in smaller domains, which suggests that the incommensurate lattice distortion is less stable for smaller domain sizes. △ Less

Submitted 29 August, 2017; originally announced August 2017.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 96, 224101 (2017)

Direct experimental observation of the molecular Jeff=3/2 ground state in the lacunar spinel GaTa4Se8

Authors: Min Yong Jeong, Seo Hyoung Chang, Beom Hyun Kim, Jae-Hoon Sim, Ayman Said, Diego Casa, Thomas Gog, Etienne Janod, Laurent Cario, Seiji Yunoki, Myung Joon Han, Jungho Kim

Abstract: Strong spin-orbit coupling lifts the degeneracy of t2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of Jeff = 1/2 and 3/2, respectively. These spin-orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa4Se8 was theoretic… ▽ More Strong spin-orbit coupling lifts the degeneracy of t2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of Jeff = 1/2 and 3/2, respectively. These spin-orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa4Se8 was theoretically predicted to form the molecular Jeff = 3/2 ground state. Experimental verification of its existence is an important first step to exploring the consequences of the Jeff = 3/2 state. Here, we report direct experimental evidence of the Jeff = 3/2 state in GaTa4Se8 by means of excitation spectra of resonant inelastic x-rays scattering at the Ta L3 and L2 edges. We found that the excitations involving the Jeff = 1/2 molecular orbital were suppressed only at the Ta L2 edge, manifesting the realization of the molecular Jeff = 3/2 ground state in GaTa4Se8. △ Less

Submitted 20 October, 2017; v1 submitted 4 August, 2017; originally announced August 2017.

Comments: 25 pages, 5 figures + Supplementary Materials [10 pages, 5 figures]

Journal ref: Nature Communications 8, Article number: 782 (2017)

Higgs-mode radiance and charge-density-wave order in 2H-NbSe$_2$

Authors: Romain Grasset, Tommaso Cea, Yann Gallais, Maximilien Cazayous, Alain Sacuto, Laurent Cario, Lara Benfatto, Marie-Aude Méasson

Abstract: Despite being usually considered two competing phenomena, charge-density-wave and superconductivity coexist in few systems, the most emblematic one being the transition metal dichalcogenide 2H-NbSe$_2$. This unusual condition is responsible for specific Raman signatures across the two phase transitions in this compound. While the appearance of a soft phonon mode is a well-established fingerprint o… ▽ More Despite being usually considered two competing phenomena, charge-density-wave and superconductivity coexist in few systems, the most emblematic one being the transition metal dichalcogenide 2H-NbSe$_2$. This unusual condition is responsible for specific Raman signatures across the two phase transitions in this compound. While the appearance of a soft phonon mode is a well-established fingerprint of the charge-density-wave order, the nature of the sharp sub-gap mode emerging below the superconducting temperature is still under debate. In this work we use the external pressure as a knob to unveil the delicate interplay between the two orders, and consequently the nature of the superconducting mode. Thanks to an advanced extreme-conditions Raman technique we are able to follow the pressure evolution and the simultaneous collapse of the two intertwined charge density wave and superconducting modes. The comparison with microscopic calculations in a model system supports the Higgs-type nature of the superconducting mode and suggests that charge-density-wave and superconductivity in 2H-NbSe$_2$ involve mutual electronic degrees of freedom. These findings fill knowledge gap on the electronic mechanisms at play in transition metal dichalcogenides, a crucial step to fully exploit their properties in few-layers systems optimized for devices applications. △ Less

Submitted 12 October, 2017; v1 submitted 13 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 97, 094502 (2018)

Watching the birth of a charge density wave order: diffraction study on nanometer-and picosecond-scales

Authors: C. Laulhé, T. Huber, G. Lantz, A. Ferrer, S. O. Mariager, S. Grübel, J. Rittmann, J. A. Johnson, V. Esposito, A. Lübcke, L. Huber, M. Kubli, M. Savoini, V. L. R. Jacques, L. Cario, B. Corraze, E. Janod, G. Ingold, P. Beaud, S. L. Johnson, S. Ravy

Abstract: Femtosecond time-resolved X-ray diffraction is used to study a photo-induced phase transition between two charge density wave (CDW) states in 1T-TaS$_2$, namely the nearly commensurate (NC) and the incommensurate (I) CDW states. Structural modulations associated with the NC-CDW order are found to disappear within 400 fs. The photo-induced I-CDW phase then develops through a nucleation/growth proce… ▽ More Femtosecond time-resolved X-ray diffraction is used to study a photo-induced phase transition between two charge density wave (CDW) states in 1T-TaS$_2$, namely the nearly commensurate (NC) and the incommensurate (I) CDW states. Structural modulations associated with the NC-CDW order are found to disappear within 400 fs. The photo-induced I-CDW phase then develops through a nucleation/growth process which ends 100 ps after laser excitation. We demonstrate that the newly formed I-CDW phase is fragmented into several nanometric domains that are growing through a coarsening process. The coarsening dynamics is found to follow the universal Lifshitz-Allen-Cahn growth law, which describes the ordering kinetics in systems exhibiting a non-conservative order parameter. △ Less

Submitted 21 March, 2017; originally announced March 2017.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. Lett. 118, 247401 (2017)

Strong enhancement of superconductivity at high pressures within the charge-density-wave states of 2H-TaS 2 and 2H-TaSe 2

Authors: D. C. Freitas, P Rodiere, M. R. Osorio, E Navarro-Moratalla, N. M. Nemes, V. G. Tissen, L Cario, E Coronado, M García-Hernández, S Vieira, M Núñez-Regueiro, H Suderow

Abstract: We present measurements of the superconducting and charge density wave critical temperatures (Tc and TCDW) as a function of pressure in the transition metal dichalchogenides 2H-TaSe2 and 2H-TaS2. Resistance and susceptibility measurements show that Tc increases from temperatures below 1 K up to 8.5 K at 9.5 GPa in 2H-TaS2 and 8.2 K at 23 GPa in 2H-TaSe2. We observe a kink in the pressure dependenc… ▽ More We present measurements of the superconducting and charge density wave critical temperatures (Tc and TCDW) as a function of pressure in the transition metal dichalchogenides 2H-TaSe2 and 2H-TaS2. Resistance and susceptibility measurements show that Tc increases from temperatures below 1 K up to 8.5 K at 9.5 GPa in 2H-TaS2 and 8.2 K at 23 GPa in 2H-TaSe2. We observe a kink in the pressure dependence of TCDW at about 4 GPa that we attribute to the lock-in transition from incommensurate CDW to commensurate CDW. Above this pressure, the commensurate TCDW slowly decreases coexisting with superconductivity within our full pressure range. △ Less

Submitted 2 June, 2016; v1 submitted 1 March, 2016; originally announced March 2016.

Comments: Published in Phys. Rev B 93, 184512 (2016)

Strong anharmonicity induces quantum melting of charge density wave in 2H-NbSe$\_2$ under pressure

Authors: Maxime Leroux, Ion Errea, Mathieu Le Tacon, Sofia-Michaela Souliou, Gaston Garbarino, Laurent Cario, Alexey Bosak, Francesco Mauri, Matteo Calandra, Pierre Rodière

Abstract: The interplay between charge density wave (CDW) order and superconductivity has attracted much attention. This is the central issue of along standing debate in simple transition metal dichalcogenides without strong electronic correlations, such as 2H-NbSe$\_2$, in which twosuch phases coexist. The importance of anisotropic electron-phonon interaction has been recently highlighted from both theore… ▽ More The interplay between charge density wave (CDW) order and superconductivity has attracted much attention. This is the central issue of along standing debate in simple transition metal dichalcogenides without strong electronic correlations, such as 2H-NbSe$\_2$, in which twosuch phases coexist. The importance of anisotropic electron-phonon interaction has been recently highlighted from both theoretical and experimental point of view, and explains some of the key features of the formation of the CDW in this system. On the other hand, other aspects, such as the effects of anharmonicity, remain poorly understood despite their manifest importance in such soft-phonon driven phase transition. At the theoretical level in particular, their prohibitive computational price usually prevents their investigation within conventional perturbative approaches.Here, we address this issue using a combination of high resolution inelastic X-ray scattering measurements of the phonon dispersion, as afunction of temperature and pressure, with state of the art ab initio calculations. By explicitly taking into account anharmonic effects, we obtain an accurate, quantitative, description of the (P,T) dependence of the phonon spectrum, accounting for the rapid destruction of the CDW under pressure by zero mode vibrations - or quantum fluctuations - of the lattice. The low-energy longitudinal acoustic mode that drives the CDW transition barely contributes to superconductivity, explaining the insensitivity of the superconducting critical temperature to the CDW transition. △ Less

Submitted 5 November, 2015; v1 submitted 26 August, 2015; originally announced August 2015.

Journal ref: Physical Review B (Condensed Matter), American Physical Society, v 92, pp.140303(R) (2015)

Long range coherent magnetic bound states in superconductors

Authors: Gerbold C. Ménard, Sébastien Guissart, Christophe Brun, Stéphane Pons, Vasily S. Stolyarov, François Debontridder, Matthieu V. Leclerc, Etienne Janod, Laurent Cario, Dimitri Roditchev, Pascal Simon, Tristan Cren

Abstract: The quantum coherent coupling of completely different degrees of freedom is a challenging path towards creating new functionalities for quantum electronics. Usually the antagonistic coupling between spins of magnetic impurities and superconductivity leads to the destruction of the superconducting order. Here we show that a localized classical spin of an iron atom immersed in a superconducting cond… ▽ More The quantum coherent coupling of completely different degrees of freedom is a challenging path towards creating new functionalities for quantum electronics. Usually the antagonistic coupling between spins of magnetic impurities and superconductivity leads to the destruction of the superconducting order. Here we show that a localized classical spin of an iron atom immersed in a superconducting condensate can give rise to new kind of long range coherent magnetic quantum state. In addition to the well-known Shiba bound state present on top of an impurity we reveal the existence of a star shaped pattern which extends as far as 12 nm from the impurity location. This large spatial dispersion turns out to be related, in a non-trivial way, to the superconducting coherence length. Inside star branches we observed short scale interference fringes with a particle-hole asymmetry. Our theoretical approach captures these features and relates them to the electronic band structure and the Fermi wave length of the superconductor. The discovery of a directional long range effect implies that distant magnetic atoms could coherently interact leading to new topological superconducting phases with fascinating properties. △ Less

Submitted 22 June, 2015; originally announced June 2015.

Journal ref: Nature Physics 11, 1013 (2015)

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

Authors: A. Camjayi, C. Acha, R. Weht, M. G. Rodríguez, B. Corraze, E. Janod, L. Cario, M. J. Rozenberg

Abstract: The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of t… ▽ More The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement. △ Less

Submitted 15 September, 2014; originally announced September 2014.

Comments: 5 pages and 4 figures. Supplemental material: 2 pages, 2 figures

Journal ref: Phys. Rev. Lett. 113, 086404 (2014)

Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Authors: P. Stoliar, M. Rozenberg, E. Janod, B. Corraze, J. Tranchant, L. Cario

Abstract: Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle… ▽ More Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Comments: Accepted for publication in Physical Review B

Amplitude `Higgs' mode in 2H-NbSe2 Superconductor

Authors: M. -A. Méasson, Y. Gallais, M. Cazayous, B. Clair, P. Rodière, L. Cario, A. Sacuto

Abstract: We report experimental evidences for the observation of the superconducting amplitude mode, so-called `Higgs' mode in the charge density wave superconductor 2H-NbSe2 using Raman scattering. By comparing 2H-NbSe2 and its iso-structural partner 2H-NbS2 which shows superconductivity but lacks the charge density wave order, we demonstrate that the superconducting mode in 2H-NbSe2 owes its spectral wei… ▽ More We report experimental evidences for the observation of the superconducting amplitude mode, so-called `Higgs' mode in the charge density wave superconductor 2H-NbSe2 using Raman scattering. By comparing 2H-NbSe2 and its iso-structural partner 2H-NbS2 which shows superconductivity but lacks the charge density wave order, we demonstrate that the superconducting mode in 2H-NbSe2 owes its spectral weight to the presence of the coexisting charge density wave order. In addition, temperature dependent measurements in 2H-NbSe2 show a full spectral weight transfer from the charge density wave mode to the superconducting mode upon entering the superconducting phase. Both observations are fully consistent with a superconducting amplitude mode or Higgs mode. △ Less

Submitted 6 February, 2014; v1 submitted 6 January, 2014; originally announced January 2014.

Comments: Accepted for publication in Phys. Rev. B Rapid Com. 5 pages with 3 figures

Universal electric-field-driven resistive transition in narrow-gap Mott insulators

Authors: Pablo Stoliar, Laurent Cario, Etienne Janod, Benoit Corraze, Catherine Guillot-Deudon, Sabrina Salmon-Bourmand, Vincent Guiot, Julien Tranchant, Marcelo Rozenberg

Abstract: One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with n… ▽ More One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with negligible power dissipation. In this context, one possible route to control the Mott transition is to electrostatically dope the systems using strong dielectrics, in FET-like devices. Another possibility is through resistive switching, that is, to induce the insulator-to-metal transition by strong electric pulsing. This action brings the correlated system far from equilibrium, rendering the exact treatment of the problem a difficult challenge. Here, we show that existing theoretical predictions of the off-equilibrium manybody problem err by orders of magnitudes, when compared to experiments that we performed on three prototypical narrow gap Mott systems V2-xCrxO3, NiS2-xSex and GaTa4Se8, and which also demonstrate a striking universality of this Mott resistive transition (MRT). We then introduce and numerically study a model based on key theoretically known physical features of the Mott phenomenon in the Hubbard model. We find that our model predictions are in very good agreement with the observed universal MRT and with a non-trivial timedelay electric pulsing experiment, which we also report. Our study demonstrates that the MRT can be associated to a dynamically directed avalanche. △ Less

Submitted 20 September, 2013; originally announced September 2013.

Journal ref: Advanced Materials 25, 23 (2013) 3222-3226

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories

Authors: Laurent Cario, Cristian Vaju, Benoit Corraze, Vincent Guiot, Etienne Janod

Abstract: The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon reach their miniaturization limits mostly because reliably keeping enough electrons in an always smaller cell size will become increasingly difficult . The con… ▽ More The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon reach their miniaturization limits mostly because reliably keeping enough electrons in an always smaller cell size will become increasingly difficult . The control of electrical resistance at the nanometer scale therefore requires new concepts, and the ultimate resistance-change device is believed to exploit a purely electronic phase change such as the Mott insulator to insulator transition [2]. Here we show that application of short electric pulses allows to switch back and forth between an initial high-resistance insulating state ("0" state) and a low-resistance "metallic" state ("1" state) in the whole class of Mott Insulator compounds AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se). We found that electric fields as low as 2 kV/cm induce an electronic phase change in these compounds from a Mott insulating state to a metallic-like state. Our results suggest that this transition belongs to a new class of resistive switching and might be explained by recent theoretical works predicting that an insulator to metal transition can be achieved by a simple electric field in a Mott Insulator. This new type of resistive switching has potential to build up a new class of Resistive Random Access Memory (RRAM) with fast writing/erasing times (50 ns to 10 μs) and resistance ratios ΔR/R of the order of 25% at room temperature. △ Less

Submitted 20 April, 2013; originally announced April 2013.

Journal ref: Advanced Materials 22, 45 (2010) 5193

Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators

Authors: Vincent Guiot, Laurent Cario, Etienne Janod, Benoit Corraze, Vinh Ta Phuoc, Marcelo Rozenberg, Pablo Stoliar, Tristan Cren, Dimitri Roditchev

Abstract: Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa$_4$Se$_{8-x}$Te$_x$. We find that the I-V char… ▽ More Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa$_4$Se$_{8-x}$Te$_x$. We find that the I-V characteristics and the magnitude of the threshold electric field (E$_{th}$) do not correspond to a Zener breakdown, but rather to an avalanche breakdown. E$_{th}$ increases as a power law of the Mott Hubbard gap (E$_g$), in surprising agreement with the universal law E$_{th}$ $\propto$E$_g$$^{2.5}$ reported for avalanche breakdown in semiconductors. However, the delay time for the avalanche that we observe in Mott insulators is over three orders of magnitude longer than in conventional semiconductors. Our results suggest that the electric field induces local insulator-to-metal Mott transitions that create conductive domains which grow to form filamentary paths across the sample. △ Less

Submitted 17 April, 2013; originally announced April 2013.

Journal ref: Nature Communications 4 (2013) 1722

Pressure dependence of superconducting critical temperature and upper critical field of 2H-NbS2

Authors: V. G. Tissen, M. R. Osorio, J. P. Brison, N. M. Nemes, M. Garcia-Hernandez, L. Cario, P. Rodiere, S. Vieira, H. Suderow

Abstract: We present measurements of the superconducting critical temperature Tc and upper critical field Hc2 as a function of pressure in the transition metal dichalcogenide 2H-NbS2 up to 20 GPa. We observe that Tc increases smoothly from 6K at ambient pressure to about 8.9K at 20GPa. This range of increase is comparable to the one found previously in 2H-NbSe2. The temperature dependence of the upper criti… ▽ More We present measurements of the superconducting critical temperature Tc and upper critical field Hc2 as a function of pressure in the transition metal dichalcogenide 2H-NbS2 up to 20 GPa. We observe that Tc increases smoothly from 6K at ambient pressure to about 8.9K at 20GPa. This range of increase is comparable to the one found previously in 2H-NbSe2. The temperature dependence of the upper critical field Hc2(T) of 2H-NbS2 varies considerably when increasing the pressure. At low pressures, Hc2(0) decreases, and at higher pressures both Tc and Hc2(0) increase simultaneously. This points out that there are pressure induced changes of the Fermi surface, which we analyze in terms of a simplified two band approach. △ Less

Submitted 5 April, 2013; originally announced April 2013.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 87, 134502 (2013), http://link.aps.org/doi/10.1103/PhysRevB.87.134502

Ultrafast filling of an electronic pseudogap in an incommensurate crystal

Authors: V. Brouet, J. Mauchain, E. Papalazarou, J. Faure, M. Marsi, P. H. Lin, A. Taleb-Ibrahimi, P. Le Fevre, F. Bertran, L. Cario, E. Janod, B. Corraze, V. Ta Phuoc, L. Perfetti

Abstract: We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K… ▽ More We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals. △ Less

Submitted 29 January, 2013; originally announced January 2013.

Journal ref: Physical Review B 87, 041106(R) (2013)

In-plane magnetic penetration depth in NbS$_{2}$

Authors: Pascale Diener, Maxime Leroux, Laurent Cario, Thierry Klein, Pierre Rodiere

Abstract: We report on the temperature dependence of the in plane magnetic penetration depth ($λ_{ab}$) and first penetration field ($H_f\propto 1/λ_{ab}^2(T)$ for $H\|c$) in 2H-NbS$_2$ single crystals. An exponential temperature dependence is clearly observed in $λ_{ab}$(T) at low temperature, signing the presence of a fully open superconducting gap. This compound is the only superconducting 2H-dichalcogen… ▽ More We report on the temperature dependence of the in plane magnetic penetration depth ($λ_{ab}$) and first penetration field ($H_f\propto 1/λ_{ab}^2(T)$ for $H\|c$) in 2H-NbS$_2$ single crystals. An exponential temperature dependence is clearly observed in $λ_{ab}$(T) at low temperature, signing the presence of a fully open superconducting gap. This compound is the only superconducting 2H-dichalcogenide which does not develop a charge density wave (CDW). However as previously observed in 2H-NbSe$_2$, this gap ($Δ_{1}=1.1\, k_{B}T_{c}$) is significantly smaller than the standard BCS weak coupling value. At higher temperature, a larger gap ($Δ_{2}=1.8\, k_{B}T_{c}$) has to be introduced to describe the data which are compatible with a two gap model. The superconducting gaps are hence very similar in NbS$_2$ and NbSe$_2$ and we show here that both of them open in the strongly coupled Nb tubular sheets independently of the presence of a CDW or not. △ Less

Submitted 9 January, 2013; originally announced January 2013.

Journal ref: Phys. Rev. B 84 (2011) 054531

Temperature driven Vanadium clusterization and band gap enlargement in the layered misfit compound (LaS)$_{1.196}$VS$_2$

Authors: V. Ta Phuoc, V. Brouet, B. Corraze, E. Janod, L. Cario

Abstract: Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectros… ▽ More Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectroscopies. ARPES reveals that a nearly filled band with negative curvature, close enough from the Fermi level at 300K to produce metallic-like behaviour as observed in optical conductivity spectra. At low temperature, the band structure is strongly modified, yielding to an insulating state with a optical gap of 120 meV. An accurate (3+1)D analysis of x-ray diffraction data shows that, although a phase transition does not occur, structural distortions increase as temperature is decreased, and vanadium clusterization is enhanced. We found that the changes of electronic properties and structure are intimately related. This indicates that structural distorsion play a major role in the insulating nature of (LaS)$_{1.196}$VS$_2$ and that electronic correlation may not be important, contrary to previous belief. These results shed a new light on the mechanism at the origin of non-linear electric properties observed in (LaS)$_{1.196}$VS$_2$. △ Less

Submitted 29 October, 2012; originally announced October 2012.

Scanning tunneling spectroscopy of layers of superconducting 2H-TaSe$_\textbf{2}$: Evidence for a zero bias anomaly in single layers

Authors: J. A. Galvis, P. Rodière, I. Guillamón, M. R. Osorio, J. G. Rodrigo, L. Cario, E. Navarro-Moratalla, E. Coronado, S. Vieira, H. Suderow

Abstract: We report a characterization of surfaces of the dichalcogenide TaSe$_2$ using scanning tunneling microscopy and spectroscopy (STM/S) at 150 mK. When the top layer has the 2H structure and the layer immediately below the 1T structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero bias peak on top of Se atoms to a gap in between Se atoms. The zero… ▽ More We report a characterization of surfaces of the dichalcogenide TaSe$_2$ using scanning tunneling microscopy and spectroscopy (STM/S) at 150 mK. When the top layer has the 2H structure and the layer immediately below the 1T structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero bias peak on top of Se atoms to a gap in between Se atoms. The zero bias peak is additionally modulated by the commensurate $3a_0 \times 3a_0$ charge density wave of 2H-TaSe$_2$. Multilayers of 2H-TaSe$_2$ show a spatially homogeneous superconducting gap with a critical temperature also of 1 K. We discuss possible origins for the peculiar tunneling conductance in single layers. △ Less

Submitted 4 March, 2013; v1 submitted 9 October, 2012; originally announced October 2012.

Comments: 10 pages, 10 figures

Journal ref: Phys. Rev. B 87, 094502 (2013)

Anharmonic suppression of Charge density wave in 2H-NbS$_2$

Authors: Maxime Leroux, Mathieu Le Tacon, Matteo Calandra, Laurent Cario, Marie-Aude Méasson, Pascale Diener, Elena Borrissenko, Alexei Bosak, Pierre Rodière

Abstract: The temperature dependence of the phonon spectrum in the superconducting transition metal dichalcogenide 2H-NbS$_2$ is measured by diffuse and inelastic x-ray scattering. A deep, wide and strongly temperature dependent softening, of the two lowest energy longitudinal phonons bands, appears along the $\mathrm{ΓM}$ symmetry line in reciprocal space. In sharp contrast to the iso-electronic compounds… ▽ More The temperature dependence of the phonon spectrum in the superconducting transition metal dichalcogenide 2H-NbS$_2$ is measured by diffuse and inelastic x-ray scattering. A deep, wide and strongly temperature dependent softening, of the two lowest energy longitudinal phonons bands, appears along the $\mathrm{ΓM}$ symmetry line in reciprocal space. In sharp contrast to the iso-electronic compounds 2H-NbSe$_2$, the soft phonons energies are finite, even at very low temperature, and no charge density wave instability occurs, in disagreement with harmonic ab-initio calculations. We show that 2H-NbS$_2$ is at the verge of the charge density wave transition and its occurrence is only suppressed by the large anharmonic effects. Moreover, the anharmonicity and the electron phonon coupling both show a strong in-plane anisotropy. △ Less

Submitted 9 October, 2012; v1 submitted 8 October, 2012; originally announced October 2012.

Comments: 6 pages, 5 figures, accepted for publication in Physical Review B

Electric pulse induced electronic patchwork in the Mott insulator GaTa$_{4}$Se$_{8}$

Authors: Vincent Dubost, Tristan Cren, François Debontridder, Dimitri Roditchev, Cristian Vaju, Vincent Guiot, Laurent Cario, Benoît Corraze, Etienne Janod

Abstract: Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samp… ▽ More Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samples reveal at nanometer scale a complex electronic pattern that consists of metallic and super-insulating patches immersed in the pristine insulating matrix. Surprisingly, both kinds of patches are accompanied by a strong local topographic inflation, thus evidencing for a strong electron-lattice coupling involved in this metal-insulator transition. Finally, using a strong electric field generated across the STM tunneling junction, we demonstrate the possibility to trig the metal-insulator transition locally even at room temperature. △ Less

Submitted 29 April, 2013; v1 submitted 21 May, 2012; originally announced May 2012.

Comments: This paper has been strongly modified and a new version will be submitted soon

Chiral charge order in the superconductor 2H-TaS2

Authors: I. Guillamon, H. Suderow, J. G. Rodrigo, S. Vieira, P. Rodiere, L. Cario, E. Navarro-Moratalla, C. Marti-Gastaldo, E. Coronado

Abstract: We find chiral charge order in the superconductor 2H-TaS2 using Scanning Tunneling Microscopy and Spectroscopy (STM/S) at 0.1 K. Topographic images show hexagonal atomic lattice and charge density wave (CDW) with clockwise and counterclockwise charge modulations. Tunneling spectroscopy reveals the superconducting density of states, disappearing at Tc = 1.75 K and showing a wide distribution of val… ▽ More We find chiral charge order in the superconductor 2H-TaS2 using Scanning Tunneling Microscopy and Spectroscopy (STM/S) at 0.1 K. Topographic images show hexagonal atomic lattice and charge density wave (CDW) with clockwise and counterclockwise charge modulations. Tunneling spectroscopy reveals the superconducting density of states, disappearing at Tc = 1.75 K and showing a wide distribution of values of the superconducting gap, centered around Δ=0.28 meV. △ Less

Submitted 18 July, 2011; originally announced July 2011.

Specific-heat measurements of superconducting NbS2 single crystal in an external magnetic field: Study on the energy gap structure

Authors: J. Kacmarcik, Z. Pribulova, C. Marcenat, T. Klein, P. Rodiere, L. Cario, P. Samuely

Abstract: The heat capacity of a 2H-NbS2 single crystal has been measured by a highly sensitive ac technique down to 0.6 K and in magnetic fields up to 14 T. At very low temperatures data show excitations over an energy gap (2DS/kBTc \approx 2.1) much smaller than the BCS value. The overall temperature dependence of the electronic specific heat Ce can be explained either by the existence of a strongly aniso… ▽ More The heat capacity of a 2H-NbS2 single crystal has been measured by a highly sensitive ac technique down to 0.6 K and in magnetic fields up to 14 T. At very low temperatures data show excitations over an energy gap (2DS/kBTc \approx 2.1) much smaller than the BCS value. The overall temperature dependence of the electronic specific heat Ce can be explained either by the existence of a strongly anisotropic single-energy gap or within a two-gap scenario with the large gap about twice bigger than the small one. The field dependence of the Sommerfeld coefficient shows a strong curvature for both principal-field orientations, parallel and perpendicular to the c axis of the crystal, resulting in a magnetic field dependence of the superconducting anisotropy. These features are discussed in comparison to the case of MgB2 and to the data obtained by scanning-tunneling spectroscopy. We conclude that the two-gap scenario better describes the gap structure of NbS2 than the anisotropic s-wave model. △ Less

Submitted 27 October, 2010; originally announced October 2010.

Journal ref: Phys. Rev. B 82 (2010) 014518

Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator

Authors: C. Vaju, L. Cario, B. Corraze, E. Janod, V. Dubost, T. Cren, D. Roditchev, D. Braithwaite, O. Chauvet

Abstract: Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these sys… ▽ More Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material. △ Less

Submitted 10 September, 2009; originally announced September 2009.

Comments: Highlight in Advanced Functional Materials 18, 1-4 (2008) doi : 10.1002/adfm.200800558

Journal ref: Advanced Materials 20, 2760-2765 (2008)

Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides

Authors: Vincent Dubost, T. Cren, C. Vaju, Laurent Cario, B. Corraze, E. Janod, François Debontridder, D. Roditchev

Abstract: We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the… ▽ More We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly "read" by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator. △ Less

Submitted 30 June, 2009; originally announced June 2009.

Comments: Accepted for Advanced Functional Materials

Superconducting density of states and vortex cores of 2H-NbS2

Authors: I. Guillamon, H. Suderow, S. Vieira, L. Cario, P. Diener, P. Rodiere

Abstract: Scanning tunneling microscopy and spectroscopy (STM/S) measurements in the superconducting dichalcogenide 2H-NbS2 show a peculiar superconducting density of states with two well defined features at 0.97 meV and 0.53 meV, located respectively above and below the value for the superconducting gap expected from single band s-wave BCS model (D=1.76kBTc=0.9 meV). Both features have a continuous tempe… ▽ More Scanning tunneling microscopy and spectroscopy (STM/S) measurements in the superconducting dichalcogenide 2H-NbS2 show a peculiar superconducting density of states with two well defined features at 0.97 meV and 0.53 meV, located respectively above and below the value for the superconducting gap expected from single band s-wave BCS model (D=1.76kBTc=0.9 meV). Both features have a continuous temperature evolution and disappear at Tc = 5.7 K. Moreover, we observe the hexagonal vortex lattice with radially symmetric vortices and a well developed localized state at the vortex cores. The sixfold star shape characteristic of the vortex lattice of the compound 2H-NbSe2 is, together with the charge density wave order (CDW), absent in 2H-NbS2. △ Less

Submitted 11 July, 2008; originally announced July 2008.

Comments: 5 pages, 4 figures