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Electrical conductivity enhancement of epitaxially grown TiN thin films
Authors:
Yeong Gwang Khim,
Beomjin Park,
Jin Eun Heo,
Young Hun Khim,
Young Rok Khim,
Minsun Gu,
Tae Gyu Rhee,
Seo Hyoung Chang,
Moonsup Han,
Young Jun Chang
Abstract:
Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640oC and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of sur…
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Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640oC and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of surface oxidation than the polycrystalline ones grown at room temperature. The epitaxial films show drastically reduced resistivity (~30 micro-ohm-cm), much smaller than the polycrystalline films. Temperature-dependent resistivity measurements show a nearly monotonic temperature slope down to low temperature. These results demonstrate that high temperature growth of TiN thin films leads to significant enhancement of electrical conductivity, promising for durable and scalable electrode applications.
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Submitted 22 October, 2023;
originally announced October 2023.
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Atomic arrangement of van der Waals heterostructures using X-ray scattering and crystal truncation rod analysis
Authors:
Ryung Kim,
Byoung Ki Choi,
Kyeong Jun Lee,
Hyuk Jin Kim,
Hyun Hwi Lee,
Tae Gyu Rhee,
Yeong Gwang Khim,
Young Jun Chang,
Seo Hyoung Chang
Abstract:
Vanadium diselenide (VSe2) has intriguing physical properties such as unexpected ferromagnetism at the two-dimensional limit. However, the experimental results for room temperature ferromagnetism are still controversial and depend on the detailed crystal structure and stoichiometry. Here we introduce crystal truncation rod (CTR) analysis to investigate the atomic arrangement of bilayer VSe2 and bi…
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Vanadium diselenide (VSe2) has intriguing physical properties such as unexpected ferromagnetism at the two-dimensional limit. However, the experimental results for room temperature ferromagnetism are still controversial and depend on the detailed crystal structure and stoichiometry. Here we introduce crystal truncation rod (CTR) analysis to investigate the atomic arrangement of bilayer VSe2 and bilayer graphene (BLG) hetero-structures grown on a 6H-SiC(0001) substrate. Using non-destructive CTR analysis, we were able to obtain electron density profiles and detailed crystal structure of the VSe2/BLG heterostructures. Specifically, the out-of-plane lattice parameters of each VSe2 layer were modulated by the interface compared to that of the bulk VSe2 1T phase. The atomic arrangement of the VSe2/BLG heterostructure provides deeper understanding and insight for elucidating the magnetic properties of the van der Waals heterostructure.
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Submitted 22 October, 2023;
originally announced October 2023.
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Experimental verification of polar structures in ultrathin BaTiO_{3} layers using resonant x-ray reflectivity
Authors:
Kook Tae Kim,
Yeong Jae Shinb,
Sung-Jin Kang,
Ryung Kim,
Miyoung Kim,
Tae Won Noh,
Yongseong Choi,
Seo Hyoung Chang,
Dong Ryeol Lee
Abstract:
Functional devices with ultrathin ferroelectric layers have been attracted as a promising candidate for next-generation memory and logic device applications. Using the ultrathin ferroelectric layers, particularly approaching the two-dimensional limit, however, it is still challenging to control ferroelectric switching and to observe ferroelectricity by spectroscopic tools. In particular, conventio…
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Functional devices with ultrathin ferroelectric layers have been attracted as a promising candidate for next-generation memory and logic device applications. Using the ultrathin ferroelectric layers, particularly approaching the two-dimensional limit, however, it is still challenging to control ferroelectric switching and to observe ferroelectricity by spectroscopic tools. In particular, conventional methods such as electrical measurements and piezoelectric response force microscopy are very limited due to leakage currents and the smallness of the ferroelectric signals. Here, we show that the ferroelectricity of ultrathin SrRuO3/BaTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates can be measured using resonant x-ray reflectivity (RXRR). This experimental technique can provide an element-specific electronic depth profile as well as increased sensitivity to Ti off-center displacements at the Ti K pre-edge. The depth-sensitivity of RXRR selectively detects the strong polarization dependence of the Ti pre-edge features of ultrathin BaTiO3 layers while discriminating the contribution of the SrTiO3 substrate. This technique verified that the BaTiO3 layer can be ferroelectric down to the lowest experimental limit of a critical thickness of 2.5 unit cells. Our results can open a novel way to explore ultrathin ferroelectric-based nano-electronic devices.
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Submitted 15 July, 2022;
originally announced July 2022.
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Modulating Curie Temperature and Magnetic Anisotropy in Nanoscale Layered Cr_{2}Te_{3} Films: Implications for Room-Temperature Spintronics
Authors:
In Hak Lee,
Byoung Ki Choi,
Hyuk Jin Kim,
Min Jay Kim,
Hu Young Jeong,
Jong Hoon Lee,
Seung-Young Park,
Younghun Jo,
Chanki Lee,
Jun Woo Choi,
Seong Won Cho,
Suyuon Lee,
Younghak Kim,
Beom Hyun Kim,
Kyeong Jun Lee,
Jin Eun Heo,
Seo Hyoung Chang,
Fengping Li,
Bheema Lingam Chittari,
Jeil Jung,
Young Jun Chang
Abstract:
Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}…
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Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}) and magnetic anisotropy during growth of ultrathin Cr_{2}Te_{3} films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_{2}Te_{3} films as candidates for developing room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds.
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Submitted 5 April, 2021;
originally announced April 2021.
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Novel $J_{\rm{eff}}$=3/2 Metallic Phase and Unconventional Superconductivity in GaTa$_4$Se$_8$
Authors:
Min Yong Jeong,
Seo Hyoung Chang,
Hyeong Jun Lee,
Jae-Hoon Sim,
Kyeong Jun Lee,
Etienne Janod,
Laurent Cario,
Ayman Said,
Wenli Bi,
Philipp Werner,
Ara Go,
Jungho Kim,
Myung Joon Han
Abstract:
By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic…
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By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic excitation peak in the RIXS spectrum maintains its destructive quantum interference of $J_{\rm{eff}}$ at the Ta $L_2$-edge up to 10.4 GPa. Our exact diagonalization based DFT+DMFT calculations including spin-orbit coupling also reveal that the $J_{\rm{eff}}=3/2$ character can be clearly identified under high pressure. These results establish the intriguing nature of the correlated metallic magnetic phase, which represents the first confirmed example of $J_{\rm{eff}}$=3/2 moments residing in a metal. They also indicate that the pressure-induced superconductivity is likely unconventional and influenced by these $J_{\rm{eff}}=3/2$ moments. Based on a self-energy analysis, we furthermore propose the possibility of doping-induced superconductivity related to a spin-freezing crossover.
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Submitted 19 October, 2020;
originally announced October 2020.
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Hump-like structure in Hall signal from SrRuO$_3$ ultra-thin films without inhomogeneous anomalous Hall effect
Authors:
Byungmin Sohn,
Bongju Kim,
Jun Woo Choi,
Seo Hyoung Chang,
Jung Hoon Han,
Changyoung Kim
Abstract:
A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $ρ_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic…
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A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $ρ_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic Kerr-effect measurements on 4 unit cell SRO films grown on SrTiO$_3$ (001) substrates. Clear hump features are observed in the measured $ρ_{xy}$, whereas neither hump feature nor double hysteresis loop is seen in the Kerr rotation which should be proportional to the magnetization. In addition, magnetization measurement by superconducting quantum interference device shows no sign of multiple coercive fields. These results show that inhomogeneous AHE alone cannot explain the observed hump behavior in $ρ_{xy}$ data from our SRO ultra-thin films. We found that emergence of the hump structure in $ρ_{xy}$ is closely related to the growth condition, high quality films having clear sign of humps.
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Submitted 6 August, 2019;
originally announced August 2019.
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Stable hump-like Hall effect and non-coplanar spin textures in SrRuO$_3$ ultrathin film
Authors:
Byungmin Sohn,
Bongju Kim,
Se Young Park,
Hwan Young Choi,
Jae Young Moon,
Taeyang Choi,
Young Jai Choi,
Hua Zhou,
Jun Woo Choi,
Alessandro Bombardi,
Dan. G. Porter,
Seo Hyoung Chang,
Jung Hoon Han,
Changyoung Kim
Abstract:
We observed a hump-like feature in Hall effects of SrRuO$_3$ ultrathin films, and systematically investigated it with controlling thicknesses, temperatures and magnetic fields. The hump-like feature is extremely stable, even surviving as a magnetic field is tilted by as much as 85$^\circ$. Based on the atomic-level structural analysis of a SrRuO$_3$ ultrathin film with a theoretical calculation, w…
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We observed a hump-like feature in Hall effects of SrRuO$_3$ ultrathin films, and systematically investigated it with controlling thicknesses, temperatures and magnetic fields. The hump-like feature is extremely stable, even surviving as a magnetic field is tilted by as much as 85$^\circ$. Based on the atomic-level structural analysis of a SrRuO$_3$ ultrathin film with a theoretical calculation, we reveal that atomic rumplings at the thin-film surface enhance Dzyaloshinskii-Moriya interaction, which can generate stable chiral spin textures and a hump-like Hall effect. Moreover, temperature dependent resonant X-ray measurements at Ru L-edge under a magnetic field showed that the intensity modulation of unexpected peaks was correlated with the hump region in the Hall effect. We verify that the two-dimensional property of ultrathin films generates stable non-coplanar spin textures having a magnetic order in a ferromagnetic oxide material.
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Submitted 28 July, 2021; v1 submitted 3 October, 2018;
originally announced October 2018.
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Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface
Authors:
Yeong Jae Shin,
Lingfei Wang,
Yoonkoo Kim,
Ho-Hyun Nahm Daesu Lee,
Jeong Rae Kim,
Sang Mo Yang,
Jong-Gul Yoon,
Jin-Seok Chung,
Miyoung Kim,
Seo Hyoung Chang,
Tae Won Noh
Abstract:
With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface at…
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With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.
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Submitted 10 August, 2017;
originally announced August 2017.
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Direct experimental observation of the molecular Jeff=3/2 ground state in the lacunar spinel GaTa4Se8
Authors:
Min Yong Jeong,
Seo Hyoung Chang,
Beom Hyun Kim,
Jae-Hoon Sim,
Ayman Said,
Diego Casa,
Thomas Gog,
Etienne Janod,
Laurent Cario,
Seiji Yunoki,
Myung Joon Han,
Jungho Kim
Abstract:
Strong spin-orbit coupling lifts the degeneracy of t2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of Jeff = 1/2 and 3/2, respectively. These spin-orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa4Se8 was theoretic…
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Strong spin-orbit coupling lifts the degeneracy of t2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of Jeff = 1/2 and 3/2, respectively. These spin-orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa4Se8 was theoretically predicted to form the molecular Jeff = 3/2 ground state. Experimental verification of its existence is an important first step to exploring the consequences of the Jeff = 3/2 state. Here, we report direct experimental evidence of the Jeff = 3/2 state in GaTa4Se8 by means of excitation spectra of resonant inelastic x-rays scattering at the Ta L3 and L2 edges. We found that the excitations involving the Jeff = 1/2 molecular orbital were suppressed only at the Ta L2 edge, manifesting the realization of the molecular Jeff = 3/2 ground state in GaTa4Se8.
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Submitted 20 October, 2017; v1 submitted 4 August, 2017;
originally announced August 2017.
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Enhanced electrocatalytic activity via phase transitions in strongly correlated SrRuO3 thin films
Authors:
Sang A Lee,
Seokjae Oh,
Jae-Yeol Hwang,
Minseok Choi,
Chulmin Youn,
Ji Woong Kim,
Seo Hyoung Chang,
Sungmin Woo,
Jong-Seong Bae,
Sungkyun Park,
Young-Min Kim,
Suyoun Lee,
Taekjib Choi,
Sung Wng Kim,
Woo Seok Choi
Abstract:
Transition metal oxides have been extensively studied and utilized as efficient catalysts. However, the strongly correlated behavior which often results in intriguing emergent phenomena in these materials has been mostly overlooked in understanding the electrochemical activities. Here, we demonstrate a close correlation between the phase transitions and oxygen evolution reaction (OER) in a strongl…
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Transition metal oxides have been extensively studied and utilized as efficient catalysts. However, the strongly correlated behavior which often results in intriguing emergent phenomena in these materials has been mostly overlooked in understanding the electrochemical activities. Here, we demonstrate a close correlation between the phase transitions and oxygen evolution reaction (OER) in a strongly correlated SrRuO3. By systematically introducing Ru-O vacancies into the single-crystalline SrRuO3 epitaxial thin films, we induced phase transition in crystalline symmetry which resulted in corresponding modification in the electronic structure. The modified electronic structure significantly affect the electrochemical activities, so a 30% decrease in the overpotential for the OER activity was achieved. Our study suggests that a substantial enhancement in the OER activity can be realized even within single material systems, by rational design and engineering of their crystal and electronic structures.
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Submitted 11 May, 2017;
originally announced May 2017.
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Interface control of ferroelectricity in a SrRuO3/BaTiO3/SrRuO3 capacitor and its critical thickness
Authors:
Yeong Jae Shin,
Yoonkoo Kim,
Sung-Jin Kang,
Ho-Hyun Nahm,
Pattukkannu Murugavel,
Jeong Rae Kim,
Myung Rae Cho,
Lingfei Wang,
Sang Mo Yang,
Jong-Gul Yoon,
Jin-Seok Chung,
Miyoung Kim,
Hua Zhou,
Seo Hyoung Chang,
Tae Won Noh
Abstract:
The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. Here, we demonstrate that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial…
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The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. Here, we demonstrate that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial terminations of SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) ferroelectric capacitors. The SRO/BTO/SRO heterostructures were grown by the pulsed laser deposition (PLD) method. The top SRO/BTO interface grown at high PO2 (around 150 mTorr) usually exhibited a mixture of RuO2-BaO and SrO-TiO2 terminations. By reducing PO2, we obtained atomically sharp SRO/BTO top interfaces with uniform SrO-TiO2 termination. Using capacitor devices with symmetric and uniform interfacial termination, we were able to demonstrate for the first time that the ferroelectric (FE) critical thickness can reach the theoretical limit of 3.5 unit cells (u.c.).
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Submitted 6 February, 2017;
originally announced February 2017.
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Engineering One-Dimensional Quantum Stripes from Superlattices of Two-Dimensional Layered Materials
Authors:
J. H. Gruenewald,
J. Kim,
H. S. Kim,
J. M. Johnson,
J. Hwang,
M. Souri,
J. Terzic,
S. H. Chang,
A. Said,
J. W. Brill,
G. Cao,
H. -Y. Kee,
S. S. A. Seo
Abstract:
One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of creating artificial 1D quantum stripes, which offers dimensional tunability from two- to one-dimensions. As a model system, we have fabricated 1D iridium (Ir) stripes using a-axis oriented superlattices of a relativistic Mot…
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One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of creating artificial 1D quantum stripes, which offers dimensional tunability from two- to one-dimensions. As a model system, we have fabricated 1D iridium (Ir) stripes using a-axis oriented superlattices of a relativistic Mott insulator Sr2IrO4 and a wide bandgap insulator LaSrGaO4, both of which are crystals with layered structure. In addition to the successful formation of 1D Ir-stripe structure, we have observed 1D quantum-confined electronic states from optical spectroscopy and resonant inelastic x-ray scattering. Since this 1D superlattice approach can be applied to a wide range of layered materials, it opens a new era of 1D science.
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Submitted 24 October, 2016;
originally announced October 2016.
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Temperature Evolution of Itinerant Ferromagnetism in SrRuO3 Probed by Optical Spectroscopy
Authors:
D. W. Jeong,
Hong Chul Choi,
Choong H. Kim,
Seo Hyoung Chang,
C. H. Sohn,
H. J. Park,
T. D. Kang,
Deok-Yong Cho,
S. H. Baek,
C. B. Eom,
J. H. Shim,
J. Yu,
K. W. Kim,
S. J. Moon,
T. W. Noh
Abstract:
The temperature ($T$) dependence of the optical conductivity spectra $σ(ω)$ of a single crystal SrRuO$_3$ thin film is studied over a $T$ range from 5 to 450 K. We observed significant $T$ dependence of the spectral weights of the charge transfer and interband $d$-$d$ transitions across the ferromagnetic Curie temperature ($T_c$ ~ 150 K). Such $T$ dependence was attributed to the increase in the R…
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The temperature ($T$) dependence of the optical conductivity spectra $σ(ω)$ of a single crystal SrRuO$_3$ thin film is studied over a $T$ range from 5 to 450 K. We observed significant $T$ dependence of the spectral weights of the charge transfer and interband $d$-$d$ transitions across the ferromagnetic Curie temperature ($T_c$ ~ 150 K). Such $T$ dependence was attributed to the increase in the Ru spin moment, which is consistent with the results of density functional theory calculations. $T$ scans of $σ(Ω, T)$ at fixed frequencies $Ω$ reveal a clear $T^2$ dependence below $T_c$, demonstrating that the Stoner mechanism is involved in the evolution of the electronic structure. In addition, $σ(Ω, T)$ continues to evolve at temperatures above $T_c$, indicating that the local spin moment persists in the paramagnetic state. This suggests that SrRuO$_3$ is an intriguing oxide system with itinerant ferromagnetism.
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Submitted 4 September, 2013;
originally announced September 2013.
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Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films
Authors:
T. H. Kim,
S. H. Baek,
S. Y. Jang,
S. M. Yang,
S. H. Chang,
T. K. Song,
J. -G. Yoon,
C. B. Eom,
J. -S. Chung,
T. W. Noh
Abstract:
Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted…
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Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.
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Submitted 3 January, 2011;
originally announced January 2011.
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Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter
Authors:
S. B. Lee,
S. H. Chang,
H. K. Yoo,
B. S. Kang
Abstract:
The high reset current IR in unipolar resistance switching now poses major obstacles to practical applications in memory devices. In particular, the first IR-value after the forming process is so high that the capacitors sometimes do not exhibit reliable unipolar resistance switching. We found that the compliance current Icomp is a critical parameter for reducing IR-values. We therefore introduced…
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The high reset current IR in unipolar resistance switching now poses major obstacles to practical applications in memory devices. In particular, the first IR-value after the forming process is so high that the capacitors sometimes do not exhibit reliable unipolar resistance switching. We found that the compliance current Icomp is a critical parameter for reducing IR-values. We therefore introduced an improved, simple, easy to use Icomp-limiter that stabilizes the forming process by drastically decreasing current overflow, in order to precisely control the Icomp- and subsequent IR-values.
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Submitted 26 June, 2010;
originally announced June 2010.
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Studying the Underlying Event in Drell-Yan and High Transverse Momentum Jet Production at the Tevatron
Authors:
The CDF Collaboration,
T. Aaltonen,
J. Adelman,
B. Alvarez Gonzalez,
S. Amerio,
D. Amidei,
A. Anastassov,
A. Annovi,
J. Antos,
G. Apollinari,
A. Apresyan,
T. Arisawa,
A. Artikov,
J. Asaadi,
W. Ashmanskas,
A. Attal,
A. Aurisano,
F. Azfar,
W. Badgett,
A. Barbaro-Galtieri,
V. E. Barnes,
B. A. Barnett,
P. Barria,
P. Bartos,
G. Bauer
, et al. (554 additional authors not shown)
Abstract:
We study the underlying event in proton-antiproton collisions by examining the behavior of charged particles (transverse momentum pT > 0.5 GeV/c, pseudorapidity |η| < 1) produced in association with large transverse momentum jets (~2.2 fb-1) or with Drell-Yan lepton-pairs (~2.7 fb-1) in the Z-boson mass region (70 < M(pair) < 110 GeV/c2) as measured by CDF at 1.96 TeV center-of-mass energy. We u…
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We study the underlying event in proton-antiproton collisions by examining the behavior of charged particles (transverse momentum pT > 0.5 GeV/c, pseudorapidity |η| < 1) produced in association with large transverse momentum jets (~2.2 fb-1) or with Drell-Yan lepton-pairs (~2.7 fb-1) in the Z-boson mass region (70 < M(pair) < 110 GeV/c2) as measured by CDF at 1.96 TeV center-of-mass energy. We use the direction of the lepton-pair (in Drell-Yan production) or the leading jet (in high-pT jet production) in each event to define three regions of η-φspace; toward, away, and transverse, where φis the azimuthal scattering angle. For Drell-Yan production (excluding the leptons) both the toward and transverse regions are very sensitive to the underlying event. In high-pT jet production the transverse region is very sensitive to the underlying event and is separated into a MAX and MIN transverse region, which helps separate the hard component (initial and final-state radiation) from the beam-beam remnant and multiple parton interaction components of the scattering. The data are corrected to the particle level to remove detector effects and are then compared with several QCD Monte-Carlo models. The goal of this analysis is to provide data that can be used to test and improve the QCD Monte-Carlo models of the underlying event that are used to simulate hadron-hadron collisions.
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Submitted 16 March, 2010;
originally announced March 2010.
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Reduction of high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping
Authors:
S. B. Lee,
A. Kim,
J. S. Lee,
S. H. Chang,
H. K. Yoo,
T. W. Noh,
B. Kahng,
M. -J. Lee,
C. J. Kim,
B. S. Kang
Abstract:
The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, openin…
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The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease of Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.
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Submitted 6 March, 2010;
originally announced March 2010.
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Large 1/f noise of unipolar resistance switching and its percolating nature
Authors:
S. B. Lee,
S. Park,
J. S. Lee,
S. C. Chae,
S. H. Chang,
M. H. Jung,
Y. Jo,
B. Kahng,
B. S. Kang,
M. -J. Lee,
T. W. Noh
Abstract:
We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resist…
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We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resistance R with exponent w = 1.6. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices.
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Submitted 11 August, 2009;
originally announced August 2009.
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Predictability of reset switching voltages in unipolar resistance switching
Authors:
S. B. Lee,
S. C. Chae,
S. H. Chang,
T. W. Noh
Abstract:
In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, in…
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In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO2 and FeOy capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations.
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Submitted 9 March, 2009;
originally announced March 2009.
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Scaling behaviors of RESET voltages and currents in unipolar resistance switching
Authors:
S. B. Lee,
S. C. Chae,
S. H. Chang,
J. S. Lee,
S. Seo,
B. Kahng,
T. W. Noh
Abstract:
Unipolar switching phenomena have attracted a great deal of recent attention, but the wide distributions of switching voltages still pose major obstacles for scientific advancement and practical applications. Using NiO capacitors, we investigated the distributions of the RESET voltage and current. We found that they scaled with the resistance value Ro in the low resistance state, and that the sc…
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Unipolar switching phenomena have attracted a great deal of recent attention, but the wide distributions of switching voltages still pose major obstacles for scientific advancement and practical applications. Using NiO capacitors, we investigated the distributions of the RESET voltage and current. We found that they scaled with the resistance value Ro in the low resistance state, and that the scaling exponents varied at Ro = 30 Ohm. We explain these intriguing scaling behaviors and their crossovers by analogy with percolation theory. We show that the connectivity of conducting filaments plays a crucial role in the RESET process.
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Submitted 22 October, 2008;
originally announced October 2008.
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Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films
Authors:
S. B. Lee,
S. C. Chae,
S. H. Chang,
J. S. Lee,
S. Park,
Y. Jo,
S. Seo,
B. Kahng,
T. W. Noh
Abstract:
We investigated third harmonic generation in NiO thin films, which exhibit unipolar resistance switching behavior. We found that the low resistance states of the films were strongly nonlinear, with variations in the resistance R as large as 60%. This strong nonlinear behavior was most likely caused by Joule heating of conducting filaments inside the films. By carefully controlling the applied dc…
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We investigated third harmonic generation in NiO thin films, which exhibit unipolar resistance switching behavior. We found that the low resistance states of the films were strongly nonlinear, with variations in the resistance R as large as 60%. This strong nonlinear behavior was most likely caused by Joule heating of conducting filaments inside the films. By carefully controlling the applied dc bias, we obtained several low resistance states, whose values of the third harmonic coefficient B3f were proportional to R2+w (with w = 2.07). This suggested that the resistance changes of the NiO films were accompanied by connectivity changes of the conducting filaments, as observed in classical percolating systems.
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Submitted 6 October, 2008;
originally announced October 2008.
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Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film
Authors:
S. H. Chang,
J. S. Lee,
S. C. Chae,
S. B. Lee,
C. Liu,
B. Kahng,
D. -W. Kim,
T. W. Noh
Abstract:
We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by t…
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We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by temperature. We show that these unipolar RS are closely related and can be explained by a simple unified percolation picture.
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Submitted 30 March, 2008;
originally announced March 2008.
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Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors
Authors:
S. H. Chang,
S. C. Chae,
S. B. Lee,
C. Liu,
T. W. Noh,
J. S. Lee,
B. Kahng,
J. H. Jang,
M. Y. Kim,
D. -W. Kim,
C. U. Jung
Abstract:
We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE} \leq 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent s…
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We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE} \leq 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner $t_{BE}$ makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory.
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Submitted 25 February, 2008;
originally announced February 2008.
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Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels
Authors:
Chunli Liu,
S. C. Chae,
S. H. Chang,
S. B. Lee,
T. W. Noh,
J. S. Lee,
B. Kahng,
D. -W. Kim,
C. U. Jung,
S. Seo,
Seung-Eon Ahn
Abstract:
We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measu…
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We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measurements. We used the random circuit breaker network model to explain how abnormal switching behaviors could occur. We found that this resistance change can occur via a series of avalanche processes, where conducting filaments could be formed as well as ruptured.
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Submitted 22 January, 2008;
originally announced January 2008.
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Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates
Authors:
C. Liu,
S. H. Chang,
T. W. Noh,
M. Abouzaid,
P. Ruterana,
H. H. Lee,
D. -W. Kim,
J. -S. Chung
Abstract:
We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films significantly depend on the growth parameters. ZnO…
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We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films significantly depend on the growth parameters. ZnO films grown at 700 oC with 20 mTorr O2 partial pressure initiated with a columnar growth mode and contained two kinds of domains. These domains were in-plane orientated either ZnO[112-0]//Al2O3[101-0] or ZnO[101-0]//Al2O3[101-0], and were surrounded by highly defective domain boundaries with threading dislocations. The films grown at 800 oC with 1 mTorr O2 showed 2-dimensional layered growth with only one in-plane epitaxial relationship, ZnO[112-0]//Al2O3[101-0]. Most of the defects in the layered grown films were basal plane stacking faults near the interface between ZnO and the substrate. The formation mechanism of the 30o-twisted domains with the in-plane orientation of ZnO[101-0]//Al2O3[101-0] is discussed.
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Submitted 22 August, 2006;
originally announced August 2006.
