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Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure
Authors:
Seong Won Cho,
In Hak Lee,
Youngwoong Lee,
Sangheon Kim,
Yeong Gwang Khim,
Seung-Young Park,
Younghun Jo,
Junwoo Choi,
Seungwu Han,
Young Jun Chang,
Suyoun Lee
Abstract:
The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (Rxy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI…
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The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (Rxy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI). The origin of the hump structure is still controversial between the topological Hall effect model and the multi-component anomalous Hall effect (AHE) model. In this work, we have investigated a heterostructure consisting of BixSb2-xTeySe3-y (BSTS) and Cr2Te3 (CT), which are well-known TI and two-dimensional FM, respectively. By using the so-called minor-loop measurement, we have found that the hump structure observed in the CT/BSTS is more likely to originate from two AHE channels. Moreover, by analyzing the scaling behavior of each amplitude of two AHE with the longitudinal resistivities of CT and BSTS, we have found that one AHE is attributed to the extrinsic contribution of CT while the other is due to the intrinsic contribution of BSTS. It implies that the proximity-induced ferromagnetic layer inside BSTS serves as a source of the intrinsic AHE, resulting in the hump structure explained by the two AHE model.
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Submitted 22 October, 2023;
originally announced October 2023.
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Contact holes in vertical electrode structures analyzed by voltage contrast-SEM and conducting AFM
Authors:
Minsun Gu,
Moon Seop Hyun,
Moonsup Han,
Gyungtae Kim,
Young Jun Chang
Abstract:
Soaring demands of multi-stacked memory devices request urgent development of backside contact electrode technologies, such as high aspect ratio etching, metallization, and inspection methods. Especially the complex metal contact process should be monitored for each manufacturing step to filter the defective samples and to maintain the high yield of production. Among the inspection methods for det…
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Soaring demands of multi-stacked memory devices request urgent development of backside contact electrode technologies, such as high aspect ratio etching, metallization, and inspection methods. Especially the complex metal contact process should be monitored for each manufacturing step to filter the defective samples and to maintain the high yield of production. Among the inspection methods for detecting the electrical connections, there is voltage contrast (VC)-SEM and conducting AFM (C-AFM). In this report, we investigated the two inspection methods for testing designed samples with different contact hole states. The VC-SEM data shows the contrast variation at the contact holes, from which one may discern the contact status with an optimum voltage. The C-AFM results clearly demonstrate a finite electrical current in the connected contact, while a negligible current in the disconnected one. Finally, we discuss insights of using the two methods for analyzing the contact hole technologies with high aspect ratios.
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Submitted 22 October, 2023;
originally announced October 2023.
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Electrical conductivity enhancement of epitaxially grown TiN thin films
Authors:
Yeong Gwang Khim,
Beomjin Park,
Jin Eun Heo,
Young Hun Khim,
Young Rok Khim,
Minsun Gu,
Tae Gyu Rhee,
Seo Hyoung Chang,
Moonsup Han,
Young Jun Chang
Abstract:
Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640oC and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of sur…
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Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640oC and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of surface oxidation than the polycrystalline ones grown at room temperature. The epitaxial films show drastically reduced resistivity (~30 micro-ohm-cm), much smaller than the polycrystalline films. Temperature-dependent resistivity measurements show a nearly monotonic temperature slope down to low temperature. These results demonstrate that high temperature growth of TiN thin films leads to significant enhancement of electrical conductivity, promising for durable and scalable electrode applications.
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Submitted 22 October, 2023;
originally announced October 2023.
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Atomic arrangement of van der Waals heterostructures using X-ray scattering and crystal truncation rod analysis
Authors:
Ryung Kim,
Byoung Ki Choi,
Kyeong Jun Lee,
Hyuk Jin Kim,
Hyun Hwi Lee,
Tae Gyu Rhee,
Yeong Gwang Khim,
Young Jun Chang,
Seo Hyoung Chang
Abstract:
Vanadium diselenide (VSe2) has intriguing physical properties such as unexpected ferromagnetism at the two-dimensional limit. However, the experimental results for room temperature ferromagnetism are still controversial and depend on the detailed crystal structure and stoichiometry. Here we introduce crystal truncation rod (CTR) analysis to investigate the atomic arrangement of bilayer VSe2 and bi…
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Vanadium diselenide (VSe2) has intriguing physical properties such as unexpected ferromagnetism at the two-dimensional limit. However, the experimental results for room temperature ferromagnetism are still controversial and depend on the detailed crystal structure and stoichiometry. Here we introduce crystal truncation rod (CTR) analysis to investigate the atomic arrangement of bilayer VSe2 and bilayer graphene (BLG) hetero-structures grown on a 6H-SiC(0001) substrate. Using non-destructive CTR analysis, we were able to obtain electron density profiles and detailed crystal structure of the VSe2/BLG heterostructures. Specifically, the out-of-plane lattice parameters of each VSe2 layer were modulated by the interface compared to that of the bulk VSe2 1T phase. The atomic arrangement of the VSe2/BLG heterostructure provides deeper understanding and insight for elucidating the magnetic properties of the van der Waals heterostructure.
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Submitted 22 October, 2023;
originally announced October 2023.
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Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth
Authors:
Hyuk Jin Kim,
Minsu Chong,
Tae Gyu Rhee,
Yeong Gwang Khim,
Min-Hyoung Jung,
Young-Min Kim,
Hu Young Jeong,
Byoung Ki Choi,
Young Jun Chang
Abstract:
In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data al…
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In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data allows us to characterize and categorize the growth modes step by step, and extract hidden knowledge of the epitaxial film growth process. In this study, we employed the ML-assisted RHEED analysis method to investigate the growth of 2D thin films of transition metal dichalcogenides (ReSe2) on graphene substrates by MBE. Principal component analysis (PCA) and K-means clustering were used to separate statistically important patterns and visualize the trend of pattern evolution without any notable loss of information. Using the modified PCA, we could monitor the diffraction intensity of solely the ReSe2 layers by filtering out the substrate contribution. These findings demonstrate that ML analysis can be successfully employed to examine and understand the film-growth dynamics of 2D materials. Further, the ML-based method can pave the way for the development of advanced real-time monitoring and autonomous material synthesis techniques.
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Submitted 22 October, 2023;
originally announced October 2023.
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Controlling spin-orbit coupling to tailor type-II Dirac bands
Authors:
Nguyen Huu Lam,
Phuong Lien Nguyen,
Byoung Ki Choi,
Trinh Thi Ly,
Ganbat Duvjir,
Tae Gyu Rhee,
Yong Jin Jo,
Tae Heon Kim,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Younghun Hwang,
Young Jun Chang,
Jaekwang Lee,
Jungdae Kim
Abstract:
NiTe2, a type-II Dirac semimetal with strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density-functional theory (DFT) calculations, we report that the strength of spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dir…
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NiTe2, a type-II Dirac semimetal with strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density-functional theory (DFT) calculations, we report that the strength of spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dirac band. Indeed, combined studies using scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) confirm that the BDP in the NiTe2-xSex alloy moves from +0.1 eV (NiTe2) to -0.3 eV (NiTeSe) depending on the Se concentrations, indicating the effective tunability of type-II Dirac fermions. Our results demonstrate an approach to tailor the type-II Dirac band in NiTe2 by controlling the SOC strength via chalcogen substitution. This approach can be applicable to different types of topological materials.
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Submitted 22 October, 2023;
originally announced October 2023.
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External screening and lifetime of exciton population in single-layer ReSe$_2$ probed by time- and angle-resolved photoemission spectroscopy
Authors:
Klara Volckaert,
Byoung Ki Choi,
Hyuk Jin Kim,
Deepnarayan Biswas,
Denny Puntel,
Simone Peli,
Fulvio Parmigiani,
Federico Cilento,
Young Jun Chang,
Søren Ulstrup
Abstract:
The semiconductor ReSe$_2$ is characterized by a strongly anisotropic optical absorption and is therefore promising as an optically active component in two-dimensional heterostructures. However, the underlying femtosecond dynamics of photoinduced excitations in such materials has not been sufficiently explored. Here, we apply an infrared optical excitation to single-layer ReSe$_2$ grown on a bilay…
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The semiconductor ReSe$_2$ is characterized by a strongly anisotropic optical absorption and is therefore promising as an optically active component in two-dimensional heterostructures. However, the underlying femtosecond dynamics of photoinduced excitations in such materials has not been sufficiently explored. Here, we apply an infrared optical excitation to single-layer ReSe$_2$ grown on a bilayer graphene substrate and monitor the temporal evolution of the excited state signal using time- and angle-resolved photoemission spectroscopy. We measure an optical gap of $(1.53 \pm 0.02)$ eV, consistent with resonant excitation of the lowest exciton state. The exciton distribution is tunable via the linear polarization of the pump pulse and exhibits a biexponential decay with time constants given by $τ_1 = (110 \pm 10)$ fs and $τ_2 = (650 \pm 70)$ fs, facilitated by recombination via an in-gap state that is pinned at the Fermi level. By extracting the momentum-resolved exciton distribution we estimate its real-space radial extent to be greater than 17.1 Å, implying significant exciton delocalization due to screening from the bilayer graphene substrate.
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Submitted 10 January, 2023;
originally announced January 2023.
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Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface
Authors:
Hyang Keun Yoo,
Daniel Schwarz,
Soren Ulstrup,
Woojin Kim,
Chris Jozwiak,
Aaron Bostwick,
Tae Won Noh,
Eli Rotenberg,
Young Jun Chang
Abstract:
We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 micron meter in size and 1-5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing,…
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We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 micron meter in size and 1-5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing, SrOx forms a ~10 nm thick film. We show that the domain pattern can be controlled by introducing a surface miscut angle of SrTiO3. Additionally, the segregated SrOx has a lower work function, compared to that of SrTiO3. These results suggest that the control and tunability of SrOx segregation is applicable to the design of a new functional electronic devices in the semiconducting SrTiO3 based heterostructure.
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Submitted 13 October, 2022;
originally announced October 2022.
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Coupling between multiple antennas through a plasma cylinder
Authors:
L. Chang,
L. P. Zhang,
X. G. Yuan,
Y. J. Chang,
J. H. Zhang,
X. Yang,
Y. Wang,
H. S. Zhou,
G. N. Luo
Abstract:
The coupling physics between multiple antennas separated axially along a plasma cylinder is investigated. Experiments are carried out on a recently built device: Physics ANd Thruster oriented HElicon Research (PANTHER), with an upgrade of second-stage antennas. Mutual induction currents are measured in detail. It is found that the existence of plasma column going through these antennas increase th…
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The coupling physics between multiple antennas separated axially along a plasma cylinder is investigated. Experiments are carried out on a recently built device: Physics ANd Thruster oriented HElicon Research (PANTHER), with an upgrade of second-stage antennas. Mutual induction currents are measured in detail. It is found that the existence of plasma column going through these antennas increase the coupling effects among them significantly. Theoretical analyses from the perspectives of transformer and magnetic permeability and moment confirm the reasonability of this phenomenon. This work is of particular interest for electrodeless plasma source or thruster which employs multiple antennas for ionisation and acceleration.
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Submitted 10 December, 2021;
originally announced December 2021.
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Enhanced passive thermal stealth properties of VO$_2$ thin films via gradient W doping
Authors:
Hyuk Jin Kim,
Young Hwan Choi,
Dong Kyu Lee,
In Hak Lee,
Byoung Ki Choi,
Soo-Hyun Phark,
Young Jun Chang
Abstract:
Thermal stealth and camouflage have been intensively studied for blending objects with their surroundings against remote thermal image detection. Adaptive control of infrared emissivity has been explored extensively as a promising way of thermal stealth, but it still requires an additional feedback control. Passive modulation of emissivity, however, has been remained as a great challenge which req…
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Thermal stealth and camouflage have been intensively studied for blending objects with their surroundings against remote thermal image detection. Adaptive control of infrared emissivity has been explored extensively as a promising way of thermal stealth, but it still requires an additional feedback control. Passive modulation of emissivity, however, has been remained as a great challenge which requires a precise engineering of emissivity over wide temperature range. Here, we report a drastic improvement of passive camouflage thin films capable of concealing thermal objects at near room temperature without any feedback control, which consists of a vanadium dioxide (VO2) layer with gradient tungsten (W) concentration. The gradient W-doping widens the metal-insulator transition width, accomplishing self-adaptive thermal stealth with a smooth change of emissivity. Our simple approach, applicable to other similar thermal camouflage materials for improving their passive cloaking, will find wide applications, such as passive thermal camouflage, urban energy-saving smart windows, and improved infrared sensors.
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Submitted 12 May, 2021;
originally announced May 2021.
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In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure
Authors:
Hyang Keun Yoo,
Luca Moreschini,
Aaron Bostwick,
Andrew L. Walter,
Tae Won Noh,
Eli Rotenberg,
Young Jun Chang
Abstract:
The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed…
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The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V_{bi}) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O_{2}(g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Our results demonstrate not only the V_{bi}-driven CI formation in asgrown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.
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Submitted 12 May, 2021;
originally announced May 2021.
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Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring
Authors:
Hyang Keun Yoo,
Luca Moreschini,
Andrew L. Walter,
Aaron Bostwick,
Karsten Horn,
Eli Rotenberg,
Young Jun Chang
Abstract:
Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the…
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Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O2 exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy.
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Submitted 12 May, 2021;
originally announced May 2021.
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Interlayer coupling and ultrafast hot electron transfer dynamics in metallic VSe2/graphene van der Waals heterostructures
Authors:
Tae Gwan Park,
Byoung Ki Choi,
Junho Park,
Jungdae Kim,
Young Jun Chang,
Fabian Rotermund
Abstract:
Atomically thin vanadium diselenide (VSe2 ) is a two-dimensional transition metal dichalcogenide exhibiting attractive properties due to its metallic 1T-phase. With the recent development of methods to manufacture high-quality monolayer VSe 2 on van der Waals materials, the outstanding properties of VSe2 -based heterostructures have been widely studied for diverse applications. Dimensional reducti…
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Atomically thin vanadium diselenide (VSe2 ) is a two-dimensional transition metal dichalcogenide exhibiting attractive properties due to its metallic 1T-phase. With the recent development of methods to manufacture high-quality monolayer VSe 2 on van der Waals materials, the outstanding properties of VSe2 -based heterostructures have been widely studied for diverse applications. Dimensional reduction and interlayer coupling with a van der Waals substrate lead to its distinguishable characteristics from its bulk counterparts. However, only a few fundamental studies have investigated the interlayer coupling effects and hot electron transfer dynamics in VSe2 heterostructures. In this work, we reveal ultrafast and efficient interlayer hot electron transfer and interlayer coupling effects in VSe2 /graphene heterostructures. Femtosecond time-resolved reflectivity measurements showed that hot electrons in VSe 2 were transferred to graphene within a 100-fs timescale with high efficiency. Besides, coherent acoustic phonon dynamics indicated interlayer coupling in VSe2 /graphene heterostructures and efficient thermal energy transfer to three-dimensional substrates. Our results provide valuable insights into the intriguing properties of metallic transition metal dichalcogenide heterostructures and motivate designing optoelectronic and photonic devices with tailored properties.
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Submitted 12 May, 2021;
originally announced May 2021.
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Modulating Curie Temperature and Magnetic Anisotropy in Nanoscale Layered Cr_{2}Te_{3} Films: Implications for Room-Temperature Spintronics
Authors:
In Hak Lee,
Byoung Ki Choi,
Hyuk Jin Kim,
Min Jay Kim,
Hu Young Jeong,
Jong Hoon Lee,
Seung-Young Park,
Younghun Jo,
Chanki Lee,
Jun Woo Choi,
Seong Won Cho,
Suyuon Lee,
Younghak Kim,
Beom Hyun Kim,
Kyeong Jun Lee,
Jin Eun Heo,
Seo Hyoung Chang,
Fengping Li,
Bheema Lingam Chittari,
Jeil Jung,
Young Jun Chang
Abstract:
Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}…
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Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}) and magnetic anisotropy during growth of ultrathin Cr_{2}Te_{3} films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_{2}Te_{3} films as candidates for developing room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds.
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Submitted 5 April, 2021;
originally announced April 2021.
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Electronic structure and charge-density wave transition in monolayer VS_{2}
Authors:
Hyuk Jin Kim,
Byoung Ki Choi,
In Hak Lee,
Min Jay Kim,
Seung-Hyun Chun,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Young Jun Chang
Abstract:
Vanadium disulfide (VS_{2}) attracts elevated interests for its charge-density wave (CDW) phase transition, ferromagnetism, and catalytic reactivity, but the electronic structure of monolayer has not been well understood yet. Here we report synthesis of epitaxial 1T VS_{2} monolayer on bilayer graphene grown by molecular-beam epitaxy (MBE). Angle-resolved photoemission spectroscopy (ARPES) measure…
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Vanadium disulfide (VS_{2}) attracts elevated interests for its charge-density wave (CDW) phase transition, ferromagnetism, and catalytic reactivity, but the electronic structure of monolayer has not been well understood yet. Here we report synthesis of epitaxial 1T VS_{2} monolayer on bilayer graphene grown by molecular-beam epitaxy (MBE). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal that Fermi surface with six elliptical pockets centered at the M points shows gap opening at low temperature. Temperature-dependence of the gap size suggests existence of CDW phase transition above room temperature. Our observations provide important evidence to understand the strongly correlated electron physics and the related surface catalytic properties in two-dimensional transition-metal dichalcogenides (TMDCs).
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Submitted 5 April, 2021;
originally announced April 2021.
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Hot carrier-assisted switching of the electron-phonon interaction in 1$T$-VSe$_2$
Authors:
Paulina Majchrzak,
Sahar Pakdel,
Deepnarayan Biswas,
Alfred J. H. Jones,
Klara Volckaert,
Igor Marković,
Federico Andreatta,
Raman Sankar,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Charlotte E. Sanders,
Yu Zhang,
Gabriel Karras,
Richard T. Chapman,
Adam Wyatt,
Emma Springate,
Jill A. Miwa,
Philip Hofmann,
Phil D. C. King,
Nicola Lanata,
Young Jun Chang,
Søren Ulstrup
Abstract:
We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent…
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We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent electronic self-energy are extracted from the time-dependent spectral function, revealing that incoherent electron-phonon interactions heat the lattice above the charge density wave critical temperature on a timescale of $(200 \pm 40)$~fs. Density functional perturbation theory calculations establish that the presence of hot carriers alters the overall phonon dispersion and quenches efficient low-energy acoustic phonon scattering channels, which results in a new quasi-equilibrium state that is experimentally observed.
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Submitted 12 November, 2020;
originally announced November 2020.
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Ultrafast triggering of insulator-metal transition in two-dimensional VSe$_2$
Authors:
Deepnarayan Biswas,
Alfred J. H. Jones,
Paulina Majchrzak,
Byoung Ki Choi,
Tsung-Han Lee,
Klara Volckaert,
Jiagui Feng,
Igor Marković,
Federico Andreatta,
Chang-Jong Kang,
Hyuk Jin Kim,
In Hak Lee,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Charlotte E. Sanders,
Yu Zhang,
Gabriel Karras,
Richard T. Chapman,
Adam S. Wyatt,
Emma Springate,
Jill A. Miwa,
Philip Hofmann,
Phil D. C. King,
Young Jun Chang
, et al. (2 additional authors not shown)
Abstract:
Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulatin…
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Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulating phase with an anisotropic gap at the Fermi level, causing a suppression of anticipated 2D ferromagnetism in the material. Here, we investigate the interplay of electronic and lattice degrees of freedom that underpin these electronic phases in SL VSe$_2$ using ultrafast pump-probe photoemission spectroscopy. In the insulating state, we observe a light-induced closure of the energy gap on a timescale of 480 fs, which we disentangle from the ensuing hot carrier dynamics. Our work thereby reveals that the phase transition in SL VSe$_2$ is driven by electron-lattice coupling and demonstrates the potential for controlling electronic phases in 2D materials with light.
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Submitted 27 July, 2020;
originally announced July 2020.
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Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe$_{2}$
Authors:
B. K. Choi,
S. Ulstrup,
S. M. Gunasekera,
J. Kim,
S. Y. Lim,
L. Moreschini,
J. S. Oh,
S. -H. Chun,
C. Jozwiak,
A. Bostwick,
E. Rotenberg,
H. Cheong,
I. -W. Lyo,
M. Mucha-Kruczynski,
Y. J. Chang
Abstract:
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemissio…
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Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe$_{2}$, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe$_{2}$, in contrast to the 2H materials, the out-of-plane transition metal $d_{z^{2}}$ and chalcogen $p_{z}$ orbitals do not contribute significantly to the top of the valence band which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe$_{2}$ using scanning tunneling spectroscopy and explore the implications on the gap following surface-doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe$_{2}$. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place amongst two-dimensional crystals.
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Submitted 29 May, 2020;
originally announced May 2020.
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Emergence of a Metal-Insulator Transition and High Temperature Charge Density Waves in VSe2 at the Monolayer Limit
Authors:
Ganbat Duvjir,
Byoung Ki Choi,
Iksu Jang,
Søren Ulstrup,
Soonmin Kang,
Trinh Thi Ly,
Sanghwa Kim,
Young Hwan Choi,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Je-Geun Park,
Raman Sankar,
Ki-Seok Kim,
Jungdae Kim,
Young Jun Chang
Abstract:
Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphe…
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Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphene substrates. Angle-resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe2. Renormalization group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge density wave transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe2. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K, driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayered transition metal dichalcogenides.
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Submitted 9 August, 2018;
originally announced August 2018.
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Universal renormalization group flow toward perfect Fermi-surface nesting driven by enhanced electron-electron correlations in monolayer vanadium diselenide
Authors:
Iksu Jang,
Ganbat Duvjir,
Byoung Ki Choi,
Jungdae Kim,
Young Jun Chang,
Ki-Seok Kim
Abstract:
In the present study we examine nature of a charge ordering transition in monolayer vanadium diselenide ($VSe_{2}$), which would be distinguished from that of $VSe_{2}$ bulk samples, driven by more enhanced electron-electron correlations. Recently, angle resolved photoemission spectroscopy measurements uncovered that the Fermi surface nesting becomes perfect, where the dynamics of hot electrons is…
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In the present study we examine nature of a charge ordering transition in monolayer vanadium diselenide ($VSe_{2}$), which would be distinguished from that of $VSe_{2}$ bulk samples, driven by more enhanced electron-electron correlations. Recently, angle resolved photoemission spectroscopy measurements uncovered that the Fermi surface nesting becomes perfect, where the dynamics of hot electrons is dispersionless along the orthogonal direction of the nesting wave-vector. In addition, scanning tunneling microscopy measurements confirmed that the resulting CDW state shows essentially the same modulation pattern as the three dimensional system of $VSe_{2}$. Here, we perform the renormalization group analysis based on an effective field theory in terms of critical CDW fluctuations and hot electrons of imperfect Fermi-surface nesting. As a result, we reveal that the imperfect nesting universally flows into perfect nesting in two dimensions, where the Fermi velocity along the orthogonal direction of the nesting vector vanishes generically. We argue that this electronic reconstruction is responsible for the observation that the CDW transition temperature is much more enhanced to be around $T_{c} > 300$ $K$ than that of the bulk sample.
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Submitted 22 October, 2018; v1 submitted 10 April, 2018;
originally announced April 2018.
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Element-Specific Orbital Character in a Nearly-Free-Electron Superconductor Ag$_5$Pb$_2$O$_6$ Revealed by Core-Level Photoemission
Authors:
Soobin Sinn,
Kyung Dong Lee,
Choong Jae Won,
Ji Seop Oh,
Moonsup Han,
Young Jun Chang,
Namjung Hur,
Byeong-Gyu Park,
Changyoung Kim,
Hyeong-Do Kim,
Tae Won Noh
Abstract:
Ag$_5$Pb$_2$O$_6$ has attracted considerable attention due to its novel nearly-free-electron superconductivity, but its electronic structure and orbital character of the Cooper-pair electrons remain controversial. Here, we present a method utilizing core-level photoemission to show that Pb 6$s$ electrons dominate near the Fermi level. We observe a strongly asymmetric Pb 4$f_{7/2}$ core-level spect…
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Ag$_5$Pb$_2$O$_6$ has attracted considerable attention due to its novel nearly-free-electron superconductivity, but its electronic structure and orbital character of the Cooper-pair electrons remain controversial. Here, we present a method utilizing core-level photoemission to show that Pb 6$s$ electrons dominate near the Fermi level. We observe a strongly asymmetric Pb 4$f_{7/2}$ core-level spectrum, while a Ag 3$d_{5/2}$ spectrum is well explained by two symmetric peaks. The asymmetry in the Pb 4$f_{7/2}$ spectrum originates from the local attractive interaction between conducting Pb 6$s$ electrons and a Pb 4$f_{7/2}$ core hole, which implies a dominant Pb 6$s$ contribution to the metallic conduction. In addition, the observed Pb 4$f_{7/2}$ spectrum is not explained by the well-known Doniach-Šunjić lineshape for a simple metal. The spectrum is successfully generated by employing a Pb 6$s$ partial density of states from local density approximation calculations, thus confirming the Pb 6$s$ dominant character and free-electron-like density of states of Ag$_5$Pb$_2$O$_6$.
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Submitted 29 March, 2017;
originally announced March 2017.
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Electronic Structure of the Kitaev Material $α$-$\textrm{RuCl}_3$ Probed by Photoemission and Inverse Photoemission Spectroscopies
Authors:
Soobin Sinn,
Choong Hyun Kim,
Beom Hyun Kim,
Kyung Dong Lee,
Choong Jae Won,
Ji Seop Oh,
Moonsup Han,
Young Jun Chang,
Namjung Hur,
Hitoshi Sato,
Byeong-Gyu Park,
Changyoung Kim,
Hyeong-Do Kim,
Tae Won Noh
Abstract:
Recently, $α$-$\textrm{RuCl}_3$ has attracted much attention as a possible material realization of the honeycomb Kitaev model, which may stabilize a quantum-spin-liquid state. Compared to extensive studies on its magnetic properties, there is still a lack of understanding on its electronic structure, which is strongly related with its Kitaev physics. Here, the electronic structure of $α$-…
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Recently, $α$-$\textrm{RuCl}_3$ has attracted much attention as a possible material realization of the honeycomb Kitaev model, which may stabilize a quantum-spin-liquid state. Compared to extensive studies on its magnetic properties, there is still a lack of understanding on its electronic structure, which is strongly related with its Kitaev physics. Here, the electronic structure of $α$-$\textrm{RuCl}_3$ is investigated by photoemission (PE) and inverse photoemission (IPE) spectroscopies. The band gap, directly measured from PE/IPE spectra, is found to be 1.9 eV, much larger than previous estimations. The LDA calculations show that the on-site Coulomb interaction $\textit{U}$ can open the band gap without spin-orbit coupling (SOC). However, the SOC should also be incorporated to reproduce the proper gap size, indicating that the interplay between $\textit{U}$ and SOC plays an essential role in the physics of $α$-$\textrm{RuCl}_3$. There exist some spectral features in PE/IPE spectra which cannot be explained by the LDA calculations. To explain such discrepancies, we perform the configuration-interaction calculations for a ${\textrm{RuCl}}_6^{3-}$ cluster. The experimental data and calculations demonstrate that the 4$\textit{d}$ compound $α$-$\textrm{RuCl}_3$ is a $J_{\textrm{eff}}$ = 1/2 Mott insulator rather than a quasimolecular-orbital insulator. Our study also provides important physical parameters, required in verifying the proposed Kitaev physics in $α$-$\textrm{RuCl}_3$.
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Submitted 22 August, 2016;
originally announced August 2016.
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Latent Instabilities in Metallic LaNiO3 Films by Strain Control of Fermi-Surface Topology
Authors:
Hyang Keun Yoo,
Seung Ill Hyun,
Luca Moreschini,
Hyeong-Do Kim,
Young Jun Chang,
Chang Hee Sohn,
Da Woon Jeong,
Soobin Sinn,
Yong Su Kim,
Aaron Bostwick,
Eli Rotenberg,
Ji Hoon Shim,
Tae Won Noh
Abstract:
Strain control is one of the most promising avenues to search for new emergent phenomena in transition-metal-oxide films. Here, we investigate the strain-induced changes of electronic structures in strongly correlated LaNiO3 (LNO) films, using angle-resolved photoemission spectroscopy and the dynamical mean-field theory. The strongly renormalized eg-orbital bands are systematically rearranged by m…
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Strain control is one of the most promising avenues to search for new emergent phenomena in transition-metal-oxide films. Here, we investigate the strain-induced changes of electronic structures in strongly correlated LaNiO3 (LNO) films, using angle-resolved photoemission spectroscopy and the dynamical mean-field theory. The strongly renormalized eg-orbital bands are systematically rearranged by misfit strain to change its fermiology. As tensile strain increases, the hole pocket centered at the A point elongates along the kz-axis and seems to become open, thus changing Fermi-surface (FS) topology from three- to quasi-two-dimensional. Concomitantly, the FS shape becomes flattened to enhance FS nesting. A FS superstructure with Q1 = (1/2,1/2,1/2) appears in all LNO films, while a tensile-strained LNO film has an additional Q2 = (1/4,1/4,1/4) modulation, indicating that some instabilities are present in metallic LNO films. Charge disproportionation and spin-density-wave fluctuations observed in other nickelates might be their most probable origins.
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Submitted 4 March, 2015; v1 submitted 10 June, 2014;
originally announced June 2014.
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Dimensional crossover of the electronic structure in LaNiO3 ultrathin films: Orbital reconstruction, Fermi surface nesting, and the origin of the metal-insulator transition
Authors:
Hyang Keun Yoo,
Seung Ill Hyun,
Luca Moreschini,
Young Jun Chang,
Da Woon Jeong,
Chang Hee Sohn,
Yong Su Kim,
Hyeong-Do Kim,
Aaron Bostwick,
Eli Rotenberg,
Ji Hoon Shim,
Tae Won Noh
Abstract:
Dimensionality control in the LaNiO3 (LNO) heterostructure has attracted attention due to its two-dimensional (2D) electronic structure was predicted to have an orbital ordered insulating ground state, analogous to that of the parent compound of high-Tc cuprate superconductors [P. Hansmann et al., Phys. Rev. Lett. 103, 016401 (2009)]. Here, we directly measured the electronic structure of LNO ultr…
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Dimensionality control in the LaNiO3 (LNO) heterostructure has attracted attention due to its two-dimensional (2D) electronic structure was predicted to have an orbital ordered insulating ground state, analogous to that of the parent compound of high-Tc cuprate superconductors [P. Hansmann et al., Phys. Rev. Lett. 103, 016401 (2009)]. Here, we directly measured the electronic structure of LNO ultrathin films using in situ angle-resolved photoemission spectroscopy (ARPES). We recognized the dimensional crossover of the electronic structure around 3-unit cells (UC)-thick LNO film and observed the orbital reconstruction. However, complete orbital ordering was not achieved. Instead, we observed that the Fermi surface nesting effect became strong in the 2D LNO ultrathin film. These results indicated that the orbital reconstruction should be described by taking into account the strong nesting effect to search for the novel phenomena, such as superconductivity in 2D LNO heterostructure. In addition, the APRES spectra showed that the Fermi surface existed down to a 1-UC-thick film, which showed insulating behavior in transport measurements. We suggested that the metal-insulator transition in the transport properties may originate from Anderson localization.
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Submitted 3 September, 2013; v1 submitted 3 September, 2013;
originally announced September 2013.
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Tunable polaronic conduction in anatase TiO2
Authors:
S. Moser,
L. Moreschini,
J. Jacimovic,
O. S. Barisic,
H. Berger,
A. Magrez,
Y. J. Chang,
K. S. Kim,
A. Bostwick,
E. Rotenberg,
L. Forro,
M. Grioni
Abstract:
Oxygen vacancies created in anatase TiO2 by UV photons (80 - 130 eV) provide an effective electron-doping mechanism and induce a hitherto unobserved dispersive metallic state. Angle resolved photoemission (ARPES) reveals that the quasiparticles are large polarons. These results indicate that anatase can be tuned from an insulator to a polaron gas to a weakly correlated metal as a function of dopin…
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Oxygen vacancies created in anatase TiO2 by UV photons (80 - 130 eV) provide an effective electron-doping mechanism and induce a hitherto unobserved dispersive metallic state. Angle resolved photoemission (ARPES) reveals that the quasiparticles are large polarons. These results indicate that anatase can be tuned from an insulator to a polaron gas to a weakly correlated metal as a function of doping and clarify the nature of conductivity in this material.
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Submitted 22 March, 2013;
originally announced March 2013.
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Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
Authors:
Andrew L. Walter,
Aaron Bostwick,
Florian Speck,
Markus Ostler,
Keun Su Kim,
Young Jun Chang,
Luca Moreschini,
Davide Innocenti,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulat…
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Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulating substrate. Epitaxial graphene grown by the thermal decomposition of silicon carbide (SiC) is an ideal candidate for this due to the large scale, uniform graphene layers produced. The experimental spectral function of epitaxial graphene on SiC has been extensively studied. However, until now the cause of an anisotropy in the spectral width of the Fermi surface has not been determined. In the current work we show, by comparison of the spectral function to a semi-empirical model, that the anisotropy is due to small scale rotational disorder ($\sim\pm$ 0.15$^{\circ}$) of graphene domains in graphene grown on SiC(0001) samples. In addition to the direct benefit in the understanding of graphene's electronic structure this work suggests a mechanism to explain similar variations in related ARPES data.
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Submitted 21 September, 2012;
originally announced September 2012.
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Giant ambipolar Rashba effect in a semiconductor: BiTeI
Authors:
A. Crepaldi,
L. Moreschini,
G. Autès,
C. Tournier-Colletta,
S. Moser,
N. Virk,
H. Berger,
Ph. Bugnon,
Y. J. Chang,
K. Kern,
A. Bostwick,
E. Rotenberg,
O. V. Yazyev,
M. Grioni
Abstract:
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not af…
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We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics -- a large, robust spin splitting and ambipolar conduction -- are present in this material.
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Submitted 7 May, 2012;
originally announced May 2012.
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Electronic structure of graphene on single crystal copper substrates
Authors:
Andrew L. Walter,
Shu Nie,
Aaron Bostwick,
Keun Su Kim,
Luca Moreschini,
Young Jun Chang,
Davide Innocenti,
Karsten Horn,
Kevin F. McCarty,
Eli Rotenberg
Abstract:
The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a…
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The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a $\sim$ 250 meV gap. Exposure of the samples to air resulted in intercalation of oxygen under the graphene on Cu(100), which formed a ($\sqrt{2} \times 2\sqrt{2}$)R45$^{\rm o}$ superstructure. The effect of this intercalation on the graphene $π$ bands is to increase the offset of the Dirac crossing ($\sim$ -0.6 eV) and enlarge the gap ($\sim$ 350 meV). No such effect is observed for the graphene on Cu(111) sample, with the surface state at $Γ$ not showing the gap associated with a surface superstructure. The graphene film is found to protect the surface state from air exposure, with no change in the effective mass observed.
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Submitted 9 August, 2011;
originally announced August 2011.
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Effective screening and the plasmaron bands in Graphene
Authors:
Andrew L. Walter,
Aaron Bostwick,
Ki-Joon Jeon,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Young Jun Chang,
Marco Polini,
Reza Asgari,
Allan H. MacDonald,
Karsten Horn,
Eli Rotenberg
Abstract:
Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evalua…
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Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evaluating the separation of the plasmaron bands from the hole bands using Angle Resolved PhotoEmission Spectroscopy. Comparison with G0W-RPA predictions are used to determine the effective dielectric constant of the underlying substrate layer. We also show that plasmaron and electronic properties of graphene can be independently manipulated, an important aspect of a possible use in "plasmaronic" devices.
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Submitted 21 July, 2011;
originally announced July 2011.
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Reduction of charge fluctuation energies in ultrathin NiO films on Ag(001)
Authors:
Seolun Yang,
H. -K. Park,
J. -S. Kim,
H. -N. Hwang,
C. -C. Hwang,
S. -H. Phark,
Y. J. Chang,
T. W. Noh,
H. -D. Kim
Abstract:
We investigate on-site Coulomb interaction energy between two 3p holes U(Ni 3p) of ultrathin NiO films on Ag(001) by both x-ray photoelectron spectroscopy and Auger electron spectroscopy. As the film becomes thin, U(Ni 3p) monotonically decreases, and the difference of U(Ni 3p) for 1 monolayer (ML) film from that of bulk-like thick film δU(Ni 3p) reaches ~ -2.2 eV. The observed δU(Ni 3p) for 1 ML…
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We investigate on-site Coulomb interaction energy between two 3p holes U(Ni 3p) of ultrathin NiO films on Ag(001) by both x-ray photoelectron spectroscopy and Auger electron spectroscopy. As the film becomes thin, U(Ni 3p) monotonically decreases, and the difference of U(Ni 3p) for 1 monolayer (ML) film from that of bulk-like thick film δU(Ni 3p) reaches ~ -2.2 eV. The observed δU(Ni 3p) for 1 ML film is well reproduced by the differences of both the image potential and polarization energies between 1 ML film and the bulk-like thick film. Hence, the present results provide an evidence for the picture originally proposed by Duffy et al. [J. Phys. C: Solid State Phys., 16, 4087 (1983)] and Altieri et al. [Phys. Rev. B 59, R2517 (1999)]
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Submitted 13 July, 2011; v1 submitted 1 July, 2011;
originally announced July 2011.
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Highly p-doped graphene obtained by fluorine intercalation
Authors:
Andrew L. Walter,
Ki-Joon Jeon,
Aaron Bostwick,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Yong Su Kim,
Young Jun Chang,
Karsten Horn,
Eli Rotenberg
Abstract:
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi l…
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We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .
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Submitted 14 April, 2011;
originally announced April 2011.
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Selective growth of perovskite oxides on SrTiO3 (001) by control of surface reconstructions
Authors:
Soo-hyon Phark,
Young Jun Chang,
Tae Won Noh
Abstract:
We report surface reconstruction (RC)-dependent growths of SrTiO3 and SrVO3 on a SrTiO3 (001) surface with two different coexisting surface RCs, namely (2x1) and c(6x2). Up to the coverage of several layers, epitaxial growth was forbidden on the c(6x2) RC under the growth conditions that permitted layer-by-layer epitaxial growth on the (2x1) RC. Scanning tunneling microscopy examination of the lat…
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We report surface reconstruction (RC)-dependent growths of SrTiO3 and SrVO3 on a SrTiO3 (001) surface with two different coexisting surface RCs, namely (2x1) and c(6x2). Up to the coverage of several layers, epitaxial growth was forbidden on the c(6x2) RC under the growth conditions that permitted layer-by-layer epitaxial growth on the (2x1) RC. Scanning tunneling microscopy examination of the lattice structure of the c(6x2) RC revealed that this RC-selective growth mainly originated from the significant structural/stoichiometric dissimilarity between the c(6x2) RC and the cubic perovskite films. As a result, the formation of SrTiO3 islands was forbidden from the nucleation stage.
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Submitted 26 February, 2011; v1 submitted 15 July, 2010;
originally announced July 2010.
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Structure and Correlation Effects in Semiconducting SrTiO$_{3}$
Authors:
Young Jun Chang,
Aaron Bostwick,
Yong Su Kim,
Karsten Horn,
Eli Rotenberg
Abstract:
We have investigated the effects of structure change and electron correlation on SrTiO$_{3}$ single crystals using angle-resolved photoemission spectroscopy. We show that the cubic to tetragonal phase transition at 105$^\circ$K is manifested by a charge transfer from in-plane ($d_{yz}$ and $d_{zx}$) bands to out-of-plane ($d_{xy}$) band, which is opposite to the theoretical predictions. Along th…
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We have investigated the effects of structure change and electron correlation on SrTiO$_{3}$ single crystals using angle-resolved photoemission spectroscopy. We show that the cubic to tetragonal phase transition at 105$^\circ$K is manifested by a charge transfer from in-plane ($d_{yz}$ and $d_{zx}$) bands to out-of-plane ($d_{xy}$) band, which is opposite to the theoretical predictions. Along this second-order phase transition, we find a smooth evolution of the quasiparticle strength and effective masses. The in-plane band exhibits a peak-dip-hump lineshape, indicating a high degree of correlation on a relatively large (170 meV) energy scale, which is attributed to the polaron formation.
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Submitted 8 February, 2010; v1 submitted 4 February, 2010;
originally announced February 2010.
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Initial stages of nickel oxide growth on Ag(001) by pulsed laser deposition
Authors:
S. H. Phark,
Y. J. Chang,
T. W. Noh,
J. -S. Kim
Abstract:
Submonolayers of nickel oxide films were grown on an Ag(001) by pulsed laser deposition, and characterized in-situ by both scanning tunneling microscopy and X-ray photoelectron spectroscopy. We observed quasi-two-dimensional growth of the film, and clearly identified several kinds of defects, such as embedded metallic Ni clusters and, notably, oxygen atoms, even while looking deeply into the sub…
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Submonolayers of nickel oxide films were grown on an Ag(001) by pulsed laser deposition, and characterized in-situ by both scanning tunneling microscopy and X-ray photoelectron spectroscopy. We observed quasi-two-dimensional growth of the film, and clearly identified several kinds of defects, such as embedded metallic Ni clusters and, notably, oxygen atoms, even while looking deeply into the substrate. These originated from Ni and O hyperthermal projectiles as well as from NiO clusters that were formed during laser ablation of a NiO target. Those defects played a role of nucleation sites in extending the nucleation stage of thin film growth.
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Submitted 24 September, 2010; v1 submitted 9 June, 2009;
originally announced June 2009.
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Fundamental thickness limit of itinerant ferromagnetic SrRuO$_3$ thin films
Authors:
Young Jun Chang,
Choong H. Kim,
S. -H. Phark,
Y. S. Kim,
J. Yu,
T. W. Noh
Abstract:
We report on a fundamental thickness limit of the itinerant ferromagnetic oxide SrRuO$_3$ that might arise from the orbital-selective quantum confinement effects. Experimentally, SrRuO$_3$ films remain metallic even for a thickness of 2 unit cells (uc), but the Curie temperature, T$_C$, starts to decrease at 4 uc and becomes zero at 2 uc. Using the Stoner model, we attributed the T$_C$ decrease…
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We report on a fundamental thickness limit of the itinerant ferromagnetic oxide SrRuO$_3$ that might arise from the orbital-selective quantum confinement effects. Experimentally, SrRuO$_3$ films remain metallic even for a thickness of 2 unit cells (uc), but the Curie temperature, T$_C$, starts to decrease at 4 uc and becomes zero at 2 uc. Using the Stoner model, we attributed the T$_C$ decrease to a decrease in the density of states (N$_o$). Namely, in the thin film geometry, the hybridized Ru-d$_yz,zx$ orbitals are terminated by top and bottom interfaces, resulting in quantum confinement and reduction of N$_o$.
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Submitted 7 July, 2009; v1 submitted 2 March, 2009;
originally announced March 2009.
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Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films
Authors:
Yong Su Kim,
J. Kim,
S. J. Moon,
W. S. Choi,
Y. J. Chang,
J. -G. Yoon,
J. Yu,
J. -S. Chung,
T. W. Noh
Abstract:
Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Appl. Phys. Letts. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO3 without affecting its insulating property…
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Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Appl. Phys. Letts. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO3 without affecting its insulating property. These results are in agreement with electronic structural changes determined from optical transmission and X-ray absorption measurements. This work opens the way to exploiting oxygen vacancies and their complexes as a source of ferroelectricity in perovskite oxide thin films, including STO.
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Submitted 18 September, 2008;
originally announced September 2008.
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Surface versus bulk characterization of the electronic inhomogeneity in a VO_{2} film
Authors:
Y. J. Chang,
J. S. Yang,
Y. S. Kim,
D. H. Kim,
T. W. Noh,
D. -W. Kim,
E. OH,
B. Kahng,
J. -S. Chung
Abstract:
We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT, we used bulk-sensitive X-ray diffraction (XRD) measurements to estimate the fraction of metallic volume p^{XRD} in our VO_{2} film. The temperature dependence…
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We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT, we used bulk-sensitive X-ray diffraction (XRD) measurements to estimate the fraction of metallic volume p^{XRD} in our VO_{2} film. The temperature dependence of the p$^{XRD}$ was very closely correlated with the dc conductivity near the MIT temperature, and fit the percolation theory predictions quite well: $σ$ $\sim$ (p - p_{c})^{t} with t = 2.0$\pm$0.1 and p_{c} = 0.16$\pm$0.01. This agreement demonstrates that in our VO$_{2}$ thin film, the MIT should occur during the percolation process. We also used surface-sensitive scanning tunneling spectroscopy (STS) to investigate the microscopic evolution of the MIT near the surface. Similar to the XRD results, STS maps revealed a systematic decrease in the metallic phase as temperature decreased. However, this rate of change was much slower than the rate observed with XRD, indicating that the electronic inhomogeneity near the surface differs greatly from that inside the film. We investigated several possible origins of this discrepancy, and postulated that the variety in the strain states near the surface plays an important role in the broad MIT observed using STS. We also explored the possible involvement of such strain effects in other correlated electron oxide systems with strong electron-lattice interactions.
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Submitted 30 July, 2007;
originally announced July 2007.
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Epitaxial growth and the magnetic properties of orthorhombic YTiO3 thin films
Authors:
S. C. Chae,
Y. J. Chang,
S. S. A. Seo,
T. W. Noh,
D. -W. Kim,
C. U. Jung
Abstract:
High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic…
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High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 uB/Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001].
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Submitted 23 September, 2006;
originally announced September 2006.
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Optical investigations on electronic structure changes related to the metal-insulator transition in VO2 film
Authors:
C. H. Koo,
J. S. Lee,
M. W. Kim,
Y. J. Chang,
T. W. Noh,
J. H. Jung B. G. Chae,
H. -T. Kim
Abstract:
We investigated optical absorption coefficient spectra of an epitaxial VO2 film in wide photon energy (0.5 - 5.0 eV) and temperature (100 - 380 K) regions. In its insulating phase, we observed two d-d transition peaks around 1.3 eV and 2.7 eV and a charge transfer peak around 4.0 eV. As temperature goes above the metal-insulator transition temperature near 340 K, a large portion of the spectral…
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We investigated optical absorption coefficient spectra of an epitaxial VO2 film in wide photon energy (0.5 - 5.0 eV) and temperature (100 - 380 K) regions. In its insulating phase, we observed two d-d transition peaks around 1.3 eV and 2.7 eV and a charge transfer peak around 4.0 eV. As temperature goes above the metal-insulator transition temperature near 340 K, a large portion of the spectral weight of the peak around 4.0 eV becomes redistributed and a Drude-like peak appears. We initially applied the band picture to explain the details of the spectral weight changes, especially the temperature-dependent shift at 2.7 eV, but failed. To check whether the spectral changes are optical signatures of the electron-electron correlation effects, we applied the Hubbard model which takes into account orbital degeneracy. This orbitally degenerate Hubbard model could explain the details of the temperature-dependent peak shifts quite well. In addition, from the peak assignments based on the orbitally degenerate Hubbard model, we could obtain the values of U + delta(~ 3.4 eV) and JH (~ 0.7 eV), where U, delta, and JH are the on-site Coulomb repulsion energy, the crystal field splitting between the t2g bands, and the Hund's rule exchange energy, respectively. Our spectroscopic studies indicate that the electron-electron correlation could play an important role in the metal-insulator transition of VO2.
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Submitted 9 August, 2005;
originally announced August 2005.
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Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive lay
Authors:
Y. S. Kim,
J. Y. Jo,
D. J. Kim,
Y. J. Chang,
J. H. Lee,
T. W. Noh,
T. K. Song,
J. -G. Yoon,
J. -S. Chung,
S. I. Baik,
Y. -W. Kim,
C. U. Chung
Abstract:
Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high…
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Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high quality interfaces result in very good fatigue endurance, even for the 5 nm thick BaTiO3 capacitor.
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Submitted 20 June, 2005;
originally announced June 2005.
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Polarization Relaxation Induced by Depolarization Field in Ultrathin Ferroelectric BaTiO$_3$ Capacitors
Authors:
D. J. Kim,
J. Y. Jo,
Y. S. Kim,
Y. J. Chang,
J. S. Lee,
Jong-Gul Yoon,
T. K. Song,
T. W. Noh
Abstract:
Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large…
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Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large $E_{d}$ inside the ultrathin ferroelectric layer could cause severe polarization relaxation. For numerous ferroelectric devices of capacitor configuration, this effect will set a stricter size limit than the critical thickness issue.
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Submitted 13 October, 2005; v1 submitted 20 June, 2005;
originally announced June 2005.
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Kinetic Roughening of Ion-Sputtered Pd(001) Surface: Beyond the Kuramoto-Sivashinsky Model
Authors:
T. C. Kim,
C. -M. Ghim,
H. J. Kim,
D. H. Kim,
D. Y. Noh,
N. D. Kim,
J. W. Chung,
J. S. Yang,
Y. J. Chang,
T. W. Noh,
B. Kahng,
J. -S. Kim
Abstract:
We investigate the kinetic roughening of Ar$^+$ ion-sputtered Pd(001) surface both experimentally and theoretically. \textit{In situ} real-time x-ray reflectivity and \textit{in situ} scanning tunneling microscopy show that nanoscale adatom islands form and grow with increasing sputter time $t$. Surface roughness, $W(t)$, and lateral correlation length, $ξ(t)$, follows the scaling laws,…
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We investigate the kinetic roughening of Ar$^+$ ion-sputtered Pd(001) surface both experimentally and theoretically. \textit{In situ} real-time x-ray reflectivity and \textit{in situ} scanning tunneling microscopy show that nanoscale adatom islands form and grow with increasing sputter time $t$. Surface roughness, $W(t)$, and lateral correlation length, $ξ(t)$, follows the scaling laws, $W(t)\sim t^β$ and $ξ(t)\sim t^{1/z}$ with the exponents $β\simeq 0.20$ and $1/z\simeq 0.20$, for ion beam energy $ε=0.5$ keV, which is inconsistent with the prediction of the Kuramoto-Sivashinsky (KS) model. We thereby extend the KS model by applying the Sigmund theory of sputter erosion to the higher order, ${\cal O}(\nabla^4, h^2)$, where $h$ is surface height, and derive a new term of the form $\nabla^2(\nabla h)^2$ which plays an indispensable role in describing the observed morphological evolution of the sputtered surface.
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Submitted 16 September, 2003;
originally announced September 2003.
