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High-throughput ensemble characterization of individual core-shell nanoparticles with quantitative 3D density from XFEL single-particle imaging
Authors:
Do Hyung Cho,
Zhou Shen,
Yungok Ihm,
Dae Han Wi,
Chulho Jung,
Daewoong Nam,
Sangsoo Kim,
Sang-Youn Park,
Kyung Sook Kim,
Daeho Sung,
Heemin Lee,
Jae-Yong Shin,
Junha Hwang,
Sung-Yun Lee,
Su Yong Lee,
Sang Woo Han,
Do Young Noh,
N. Duane Loh,
Changyong Song
Abstract:
The structures, as building-blocks for designing functional nanomaterials, have fueled the development of versatile nanoprobes to understand local structures of noncrystalline specimens. Progresses in analyzing structures of individual specimens with atomic scale accuracy have been notable recently. In most cases, however, only a limited number of specimens are inspected lacking statistics to repr…
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The structures, as building-blocks for designing functional nanomaterials, have fueled the development of versatile nanoprobes to understand local structures of noncrystalline specimens. Progresses in analyzing structures of individual specimens with atomic scale accuracy have been notable recently. In most cases, however, only a limited number of specimens are inspected lacking statistics to represent the systems with structural inhomogeneity. Here, by employing single-particle imaging with X-ray free electron lasers and new algorithm for multiple-model 3D imaging, we succeeded in investigating several thousand specimens in a couple of hours, and identified intrinsic heterogeneities with 3D structures. Quantitative analysis has unveiled 3D morphology, facet indices and elastic strains. The 3D elastic energy distribution is further corroborated by molecular dynamics simulations to gain mechanical insight at atomic level. This work establishes a new route to high-throughput characterization of individual specimens in large ensembles, hence overcoming statistical deficiency while providing quantitative information at the nanoscale.
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Submitted 22 August, 2020;
originally announced August 2020.
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Proximity Effect Induced Electronic Properties of Epitaxial Graphene on Bi2Te2Se
Authors:
Paengro Lee,
Kyung-Hwan Jin,
Si Jin Sung,
Jin Gul Kim,
Min-Tae Ryu,
Hee-Min Park,
Seung-Hoon Jhi,
Namdong Kim,
Yongsam Kim,
Seong Uk Yu,
Kwang S. Kim,
Do Young Noh,
Jinwook Chung
Abstract:
We report that the π-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial Bi2Te2Se (BTS) films on a chemical vapor deposition (CVD) graphene. We observe two linear surface bands both from the CVD graphene notably flattened and BTS coexisting…
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We report that the π-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial Bi2Te2Se (BTS) films on a chemical vapor deposition (CVD) graphene. We observe two linear surface bands both from the CVD graphene notably flattened and BTS coexisting with their DPs separated by 0.53 eV in the photoemission data measured with synchrotron photons. We further demonstrate that the separation between the two DPs, ΔD-D, can be artificially fine-tuned by adjusting the amount of Cs atoms adsorbed on the graphene to a value as small as ΔD-D = 0.12 eV to find any proximity effect induced by the DPs. Our density functional theory calculation shows a spin-orbit gap of ~20 meV in the π-band enhanced by three orders of magnitude from that of a pristine graphene, and a concomitant phase transition from a semi-metallic to a quantum spin Hall phase when ΔD-D $\leq$ 0.20 eV. We thus present a practical means of spin-polarizing the π-band of graphene, which can be pivotal to advance the graphene-based spintronics.
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Submitted 8 November, 2015;
originally announced November 2015.
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Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene
Authors:
Namdong Kim,
Paengro Lee,
Youngwook Kim,
Jun Sung Kim,
Yongsam Kim,
Do Young Noh,
Seong Uk Yu,
Jinwook Chung,
Kwang S. Kim
Abstract:
We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de Haas (SdH) oscillation associated with a topological surface state could be observed at the interface of a metallic Bi2Se3 film with a carrier density higher tha…
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We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de Haas (SdH) oscillation associated with a topological surface state could be observed at the interface of a metallic Bi2Se3 film with a carrier density higher than ~10^19 cm-3. Our in situ X-ray diffraction study shows that the Bi2Se3 film grows epitaxially in a quintuple layer-by-layer fashion from the bottom layer without any structural distortion by interfacial strain. The magnetotransport measurements including SdH oscillations stemming from multiple conductance channels reveal that the topological surface state, with the mobility as high as ~0.5 m^2/Vs, remains intact from the graphene underneath without degradation. Given that the graphene was prepatterned on arbitrary insulating substrates, the TI-based microelectronic design could be exploited. Our study thus provides a step forward to observe the topological surface states at the interface without degradation by tuning the interface between TI and graphene into a measurable current for device application.
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Submitted 4 September, 2014;
originally announced September 2014.
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Kinetic stabilization of Fe film on GaAs(100): An in situ x-ray reflectivity Study
Authors:
T. C. Kim,
J. -M. Lee,
Y. Kim,
D. Y. Noh,
S. -J. OH,
J. -S. Kim
Abstract:
We study the growth of the Fe films on GaAs(100) at a low temperature, 140 K, by $in$-$situ$ UHV x-ray reflectivity using synchrotron radiation. We find rough surface with the growth exponent, $β_S$ = 0.51$\pm$0.04. This indicates that the growth of the Fe film proceeds via the restrictive relaxation due to insufficient thermal diffusion of the adatoms. The XRR curves are nicely fit by a model w…
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We study the growth of the Fe films on GaAs(100) at a low temperature, 140 K, by $in$-$situ$ UHV x-ray reflectivity using synchrotron radiation. We find rough surface with the growth exponent, $β_S$ = 0.51$\pm$0.04. This indicates that the growth of the Fe film proceeds via the restrictive relaxation due to insufficient thermal diffusion of the adatoms. The XRR curves are nicely fit by a model with a uniform Fe film, implying that the surface segregation and interface alloying of both Ga and As are negligible. When the Fe film is annealed to 300 K, however, the corresponding XRR can be fit only after including an additional layer of 9 A thickness between the Fe film and the substrate, indicating the formation of ultrathin alloy near the interface. The confinement of the alloy near the interface derives from the fact that the diffusion of Ga and As from the substrate should proceed via the inefficient bulk diffusion, and hence the overlying Fe film is kinetically stabilized.
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Submitted 6 March, 2006;
originally announced March 2006.
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Kinetic Roughening of Ion-Sputtered Pd(001) Surface: Beyond the Kuramoto-Sivashinsky Model
Authors:
T. C. Kim,
C. -M. Ghim,
H. J. Kim,
D. H. Kim,
D. Y. Noh,
N. D. Kim,
J. W. Chung,
J. S. Yang,
Y. J. Chang,
T. W. Noh,
B. Kahng,
J. -S. Kim
Abstract:
We investigate the kinetic roughening of Ar$^+$ ion-sputtered Pd(001) surface both experimentally and theoretically. \textit{In situ} real-time x-ray reflectivity and \textit{in situ} scanning tunneling microscopy show that nanoscale adatom islands form and grow with increasing sputter time $t$. Surface roughness, $W(t)$, and lateral correlation length, $ξ(t)$, follows the scaling laws,…
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We investigate the kinetic roughening of Ar$^+$ ion-sputtered Pd(001) surface both experimentally and theoretically. \textit{In situ} real-time x-ray reflectivity and \textit{in situ} scanning tunneling microscopy show that nanoscale adatom islands form and grow with increasing sputter time $t$. Surface roughness, $W(t)$, and lateral correlation length, $ξ(t)$, follows the scaling laws, $W(t)\sim t^β$ and $ξ(t)\sim t^{1/z}$ with the exponents $β\simeq 0.20$ and $1/z\simeq 0.20$, for ion beam energy $ε=0.5$ keV, which is inconsistent with the prediction of the Kuramoto-Sivashinsky (KS) model. We thereby extend the KS model by applying the Sigmund theory of sputter erosion to the higher order, ${\cal O}(\nabla^4, h^2)$, where $h$ is surface height, and derive a new term of the form $\nabla^2(\nabla h)^2$ which plays an indispensable role in describing the observed morphological evolution of the sputtered surface.
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Submitted 16 September, 2003;
originally announced September 2003.
