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Charge transfer and Spin-Valley locking in 4Hb-TaS$_{2}$
Authors:
Avior Almoalem,
Roni Gofman,
Yuval Nitzav,
Ilay Mangel,
Irena Feldman,
Jahyun Koo,
Federico Mazzola,
Jun Fujii,
Ivana Vobornik,
J. Sanchez-Barriga,
Oliver J. Clark,
Nicholas Clark Plumb,
Ming Shi,
Binghai Yan,
Amit Kanigel
Abstract:
4Hb-TaS$_2$ is a superconductor that exhibits unique characteristics such as time-reversal symmetry breaking, hidden magnetic memory, and topological edge modes. It is a naturally occurring heterostructure comprising of alternating layers of 1H-TaS$_2$ and 1T-TaS$_2$. The former is a well-known superconductor, while the latter is a correlated insulator with a possible non-trivial magnetic ground s…
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4Hb-TaS$_2$ is a superconductor that exhibits unique characteristics such as time-reversal symmetry breaking, hidden magnetic memory, and topological edge modes. It is a naturally occurring heterostructure comprising of alternating layers of 1H-TaS$_2$ and 1T-TaS$_2$. The former is a well-known superconductor, while the latter is a correlated insulator with a possible non-trivial magnetic ground state. In this study, we use angle resolved photoemission spectroscopy to investigate the normal state electronic structure of this unconventional superconductor. Our findings reveal that the band structure of 4H-TaS$_2$ fundamentally differs from that of its constituent materials. Specifically, we observe a significant charge transfer from the 1T layers to the 1H layers that drives the 1T layers away from half-filling. In addition, we find a substantial reduction in inter-layer coupling in 4Hb-TaS$_2$ compared to the coupling in 2H-TaS$_2$ that results in a pronounced spin-valley locking within 4Hb-TaS$_2$
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Submitted 26 May, 2024;
originally announced May 2024.
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Magnetic Dirac semimetal state of (Mn,Ge)Bi$_2$Te$_4$
Authors:
Alexander S. Frolov,
Dmitry Yu. Usachov,
Artem V. Tarasov,
Alexander V. Fedorov,
Kirill A. Bokai,
Ilya Klimovskikh,
Vasily S. Stolyarov,
Anton I. Sergeev,
Alexander N. Lavrov,
Vladimir A. Golyashov,
Oleg E. Tereshchenko,
Giovanni Di Santo,
Luca Petaccia,
Oliver J. Clark,
Jaime Sanchez-Barriga,
Lada V. Yashina
Abstract:
For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dep…
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For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs.
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Submitted 22 June, 2023;
originally announced June 2023.
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Coexistence of bulk-nodal and surface-nodeless Cooper pairings in a superconducting Dirac semimetal
Authors:
Xian P. Yang,
Yigui Zhong,
Sougata Mardanya,
Tyler A. Cochran,
Ramakanta Chapai,
Akifumi Mine,
Junyi Zhang,
Jaime Sánchez-Barriga,
Zi-Jia Cheng,
Oliver J. Clark,
Jia- Xin Yin,
Joanna Blawat,
Guangming Cheng,
Ilya Belopolski,
Tsubaki Nagashima,
Najafzadeh Sahand,
Shiyuan Gao,
Nan Yao,
Arun Bansil,
Rongying Jin,
Tay-Rong Chang,
Shik Shin,
Kozo Okazaki,
M. Zahid Hasan
Abstract:
The interplay of nontrivial topology and superconductivity in condensed matter physics gives rise to exotic phenomena. However, materials are extremely rare where it is possible to explore the full details of the superconducting pairing. Here, we investigate the momentum dependence of the superconducting gap distribution in a novel Dirac material PdTe. Using high resolution, low temperature photoe…
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The interplay of nontrivial topology and superconductivity in condensed matter physics gives rise to exotic phenomena. However, materials are extremely rare where it is possible to explore the full details of the superconducting pairing. Here, we investigate the momentum dependence of the superconducting gap distribution in a novel Dirac material PdTe. Using high resolution, low temperature photoemission spectroscopy, we establish it as a spin-orbit coupled Dirac semimetal with the topological Fermi arc crossing the Fermi level on the (010) surface. This spin-textured surface state exhibits a fully gapped superconducting Cooper pairing structure below Tc~4.5K. Moreover, we find a node in the bulk near the Brillouin zone boundary, away from the topological Fermi arc.These observations not only demonstrate the band resolved electronic correlation between topological Fermi arc states and the way it induces Cooper pairing in PdTe, but also provide a rare case where surface and bulk states host a coexistence of nodeless and nodal gap structures enforced by spin-orbit coupling.
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Submitted 3 January, 2023;
originally announced January 2023.
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Hidden spin-orbital texture at the $\barΓ$-located valence band maximum of a transition metal dichalcogenide semiconductor
Authors:
Oliver J. Clark,
Oliver Dowinton,
Mohammad Saeed Bahramy,
Jaime Sánchez-Barriga
Abstract:
Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly constrained with only a few suitable pairings of compounds and driving mechanisms found to date. Here, through spin- and angle-resolved photoemission along with densit…
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Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly constrained with only a few suitable pairings of compounds and driving mechanisms found to date. Here, through spin- and angle-resolved photoemission along with density functional theory, we establish how the $p$-derived bulk valence bands of semiconducting 1T-HfSe$_2$ possess a local, ground-state spin texture spatially confined within each Se-sublayer due to strong sublayer-localised electric dipoles orientated along the $c$-axis. This hidden spin-polarisation manifests in a `coupled spin-orbital texture' with in-equivalent contributions from the constituent $p$-orbitals. While the overall spin-orbital texture for each Se sublayer is in strict adherence to time-reversal symmetry (TRS), spin-orbital mixing terms with net polarisations at time-reversal invariant momenta are locally maintained. These apparent TRS-breaking contributions dominate, and can be selectively tuned between with a choice of linear light polarisation, facilitating the observation of pronounced spin-polarisations at the Brillouin zone centre for all $k_z$. We discuss the implications for the generation of spin-polarised populations from 1T-structured transition metal dichalcogenides using a fixed energy, linearly polarised light source.
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Submitted 7 September, 2022;
originally announced September 2022.
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Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal
Authors:
Beatriz Muñiz Cano,
Adrían Gudín,
Jaime Sánchez-Barriga,
Oliver J. Clark,
Alberto Anadón,
Jose Manuel Díez,
Pablo Olleros-Rodríguez,
Fernando Ajejas,
Iciar Arnay,
Matteo Jugovac,
Julien Rault,
Patrick Le Févre,
François Bertran,
Donya Mazhjoo,
Gustav Bihlmayer,
Stefan Blügel,
Rodolfo Miranda,
Julio Camarero,
Miguel Angel Valbuena,
Paolo Perna
Abstract:
Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this g…
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Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices.
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Submitted 1 May, 2023; v1 submitted 9 June, 2022;
originally announced June 2022.
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Is there a polaron signature in angle-resolved photoemission of CsPbBr3?
Authors:
Maryam Sajedi,
Maxim Krivenkov,
Dmitry Marchenko,
Jaime Sánchez-Barriga,
Anoop K. Chandran,
Andrei Varykhalov,
Emile D. L. Rienks,
Irene Aguilera,
Stefan Blügel,
Oliver Rader
Abstract:
The formation of large polarons has been proposed as reason for the high defect tolerance, low mobility, low charge carrier trapping and low nonradiative recombination rates of lead halide perovskites. Recently, direct evidence for large-polaron formation has been reported from a 50% effective mass enhancement in angle-resolved photoemission of CsPbBr3 over theory for the orthorhombic structure. W…
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The formation of large polarons has been proposed as reason for the high defect tolerance, low mobility, low charge carrier trapping and low nonradiative recombination rates of lead halide perovskites. Recently, direct evidence for large-polaron formation has been reported from a 50% effective mass enhancement in angle-resolved photoemission of CsPbBr3 over theory for the orthorhombic structure. We present in-depth band dispersion measurements of CsPbBr3 and GW calculations which lead to almost identical effective masses at the valence band maximum of 0.203+/-0.016 m0 in experiment and 0.226 m0 in orthorhombic theory. We argue that the effective mass can be explained solely on the basis of electron-electron correlation and large-polaron formation cannot be concluded from photoemission data.
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Submitted 28 June, 2022; v1 submitted 28 March, 2022;
originally announced March 2022.
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Emergence of Fermi arcs and novel magnetic splitting in an antiferromagnet
Authors:
Benjamin Schrunk,
Yevhen Kushnirenko,
Brinda Kuthanazhi,
Junyeong Ahn,
Lin-Lin Wang,
Evan O`Leary,
Kyungchan Lee,
Andrew Eaton,
Alexander Fedorov,
Rui Lou,
Vladimir Voroshnin,
Oliver J. Clark,
Jaime Sanchez-Barriga,
Sergey L. Bud`ko,
Robert-Jan Slager,
Paul C. Canfield,
Adam Kaminski
Abstract:
The Fermi arcs are signatures of exotic states in solids because they defy conventional concept of Fermi surfaces as closed contours in momentum space. Fermi arcs were first discovered in cuprates, and caused by the pseudogap. Weyl semimetals provided another way to generate Fermi arcs by breaking either the time reversal symmetry (TRS) or inversion symmetry of a 3D Dirac semimetal, which can resu…
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The Fermi arcs are signatures of exotic states in solids because they defy conventional concept of Fermi surfaces as closed contours in momentum space. Fermi arcs were first discovered in cuprates, and caused by the pseudogap. Weyl semimetals provided another way to generate Fermi arcs by breaking either the time reversal symmetry (TRS) or inversion symmetry of a 3D Dirac semimetal, which can result in a Weyl semimetal with pairs of Weyl nodes that have opposite chirality. The bulk-boundary correspondence associated with the Chern number leads to the emergence of Fermi arcs on the boundary. Here, we present experimental evidence that pairs of magnetically split hole- and electron-like Fermi arcs emerge below the Neel temperature, in the antiferromagnetic (AFM) state of cubic NdBi due to a novel band splitting effect. Whereas TRS is broken by the AFM order, both inversion and nonsymmorphic TRS are preserved in the bulk, precluding the possibility of a Weyl semimetal. The observed magnetic splitting is highly unusual, as it creates bands of opposing curvature, that changes with temperature and follows the antiferromagnetic order parameter. This is completely different from previously reported cases of magnetic splittings such as traditional Zeeman and Rashba, where the curvature of the bands is preserved. Therefore, our finding represents a new Fermionic state created by new type of magnetic band splitting in the presence of a long-range AFM order that are not readily explained by existing theoretical ideas.
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Submitted 23 March, 2022;
originally announced March 2022.
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Lifetime of quasi-particles in the nearly-free electron metal Sodium
Authors:
D. V. Potorochin,
R. Kurleto,
O. J. Clark,
E. D. L. Rienks,
J. Sanchez-Barriga,
F. Roth,
V. Voroshnin,
A. Fedorov,
W. Eberhardt,
B. Buechner,
J. Fink
Abstract:
We report a high-resolution angle-resolved photoemission (ARPES) study of the prototypical nearly-free-electron metal sodium. The observed mass enhancement is slightly smaller than that derived in previous studies. The new results on the lifetime broadening increase the demand for theories beyond the random phase approximation. Our results do not support the proposed strong enhancement of the scat…
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We report a high-resolution angle-resolved photoemission (ARPES) study of the prototypical nearly-free-electron metal sodium. The observed mass enhancement is slightly smaller than that derived in previous studies. The new results on the lifetime broadening increase the demand for theories beyond the random phase approximation. Our results do not support the proposed strong enhancement of the scattering rates of the charge carriers due to a coupling to spin fluctuations. Moreover, a comparison with earlier electron energy-loss data on sodium yields a strong reduction of the mass enhancement of dipolar electron-hole excitations compared to that of monopole hole excitations, measured by ARPES.
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Submitted 18 August, 2022; v1 submitted 1 December, 2021;
originally announced December 2021.
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Mn-rich MnSb2Te4: A topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K
Authors:
S. Wimmer,
J. Sánchez-Barriga,
P. Küppers,
A. Ney,
E. Schierle,
F. Freyse,
O. Caha,
J. Michalicka,
M. Liebmann,
D. Primetzhofer,
M. Hoffmann,
A. Ernst,
M. M. Otrokov,
G. Bihlmayer,
E. Weschke,
B. Lake,
E. V. Chulkov,
M. Morgenstern,
G. Bauer,
G. Springholz,
O. Rader
Abstract:
Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intri…
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Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intrinsic magnetic topological insulators with A1B2C4 stoichiometry. However, the first representative, MnBi2Te4, is antiferromagnetic with 25 K Néel temperature and strongly n-doped. Here, we show that p-type MnSb2Te4, previously considered topologically trivial, is a ferromagnetic topological insulator in the case of a few percent of Mn excess. It shows (i) a ferromagnetic hysteresis with record high Curie temperature of 45-50 K, (ii) out-of-plane magnetic anisotropy and (iii) a two-dimensional Dirac cone with the Dirac point close to the Fermi level which features (iv) out-of-plane spin polarization as revealed by photoelectron spectroscopy and (v) a magnetically induced band gap that closes at the Curie temperature as demonstrated by scanning tunneling spectroscopy. Moreover, it displays (vi) a critical exponent of magnetization beta~1, indicating the vicinity of a quantum critical point. Ab initio band structure calculations reveal that the slight excess of Mn that substitutionally replaces Sb atoms provides the ferromagnetic interlayer coupling. Remaining deviations from the ferromagnetic order, likely related to this substitution, open the inverted bulk band gap and render MnSb2Te4 a robust topological insulator and new benchmark for magnetic topological insulators.
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Submitted 25 April, 2021; v1 submitted 13 November, 2020;
originally announced November 2020.
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Magnetization relaxation and search for the magnetic gap in bulk-insulating V-doped (Bi, Sb)$_2$Te$_3$
Authors:
E. Golias,
E. Weschke,
T. Flanagan,
E. Schierle,
A. Richardella,
E. D. L. Rienks,
P. S. Mandal,
A. Varykhalov,
J. Sánchez-Barriga,
F. Radu,
N. Samarth,
O. Rader
Abstract:
V-doped (Bi,Sb)$_2$Te$_3$ has a ten times higher magnetic coercivity than its Cr-doped counterpart and therefore is believed to be a superior system for the quantum anomalous Hall effect (QAHE). The QAHE requires the opening of a magnetic band gap at the Dirac point. We do not find this gap by angle-resolved photoelectron spectroscopy down to 1 K. By x-ray magnetic circular dichroism (XMCD) we dir…
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V-doped (Bi,Sb)$_2$Te$_3$ has a ten times higher magnetic coercivity than its Cr-doped counterpart and therefore is believed to be a superior system for the quantum anomalous Hall effect (QAHE). The QAHE requires the opening of a magnetic band gap at the Dirac point. We do not find this gap by angle-resolved photoelectron spectroscopy down to 1 K. By x-ray magnetic circular dichroism (XMCD) we directly probe the magnetism at the V site and in zerofield. Hysteresis curves of the XMCD signal show a strong dependence of the coercivity on the ramping velocity of the magnetic field. The XMCD signal decays on a time scale of minutes which we conclude contributes to the absence of a detectable magnetic gap at the Dirac point.
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Submitted 14 October, 2020;
originally announced October 2020.
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A consistent view of the samarium hexaboride terminations to resolve the nature of its surface states
Authors:
H. Herrmann,
P. Hlawenka,
K. Siemensmeyer,
E. Weschke,
J. Sánchez-Barriga,
A. Varykhalov,
N. Y. Shitsevalova,
A. V. Dukhnenko,
V. B. Filipov,
S. Gabáni,
K. Flachbart,
O. Rader,
M. Sterrer,
E. D. L. Rienks
Abstract:
The research effort prompted by the prediction that SmB$_6$ could be the first topological Kondo insulator has produced a wealth of new results, though not all of these seem compatible. A major discrepancy exists between scanning tunneling microscopy / spectroscopy (STM/S) and angle-resolved photoemission spectroscopy (ARPES), because the two experimental methods suggest a very different number of…
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The research effort prompted by the prediction that SmB$_6$ could be the first topological Kondo insulator has produced a wealth of new results, though not all of these seem compatible. A major discrepancy exists between scanning tunneling microscopy / spectroscopy (STM/S) and angle-resolved photoemission spectroscopy (ARPES), because the two experimental methods suggest a very different number of terminations of the (100) surface with different properties. Here we tackle this issue in a combined STM/S and ARPES study. We find that two of the well-ordered topographies reported in earlier STM studies can be associated with the crystal terminations identified using photoemission. We further observe a reversal of the STM contrast with bias voltage for one of the topographies. We ascribe this result to a different energy dependence of Sm and B-derived states, and show that it can be used to obtain element specific images of SmB$_6$ and identify which topography belongs to which termination. We finally find STS results to support a modification of the low-energy electronic structure at the surface that has been proposed as the trivial origin of surface metallicity in this material.
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Submitted 31 October, 2018;
originally announced October 2018.
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Large magnetic gap at the Dirac point in a Mn-induced Bi$_2$Te$_3$ heterostructure
Authors:
E. D. L. Rienks,
S. Wimmer,
P. S. Mandal,
O. Caha,
J. Růžička,
A. Ney,
H. Steiner,
V. V. Volobuev,
H. Groiss,
M. Albu,
S. A. Khan,
J. Minár,
H. Ebert,
G. Bauer,
A. Varykhalov,
J. Sánchez-Barriga,
O. Rader,
G. Springholz
Abstract:
Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac point but all attempts to observe it directly have been unsuccessful. The gap size is considered crucial to overcoming the present limitations of the QAHE, which so…
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Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac point but all attempts to observe it directly have been unsuccessful. The gap size is considered crucial to overcoming the present limitations of the QAHE, which so far occurs only at temperatures one to two orders of magnitude below its principle limit set by the ferromagnetic Curie temperature $T_C$. Here, we use low temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi$_2$Te$_3$ films, which is present only below $T_C$. Surprisingly, the gap turns out to be $\sim$90 meV wide, which not only exceeds $k_BT$ at room temperature but is also 5 times larger than predicted by density functional theory. By an exhaustive multiscale structure characterization we show that this enhancement is due to a remarkable structure modification induced by Mn doping. Instead of a disordered impurity system, it forms an alternating sequence of septuple and quintuple layer blocks, where Mn is predominantly incorporated in the septuple layers. This self-organized heterostructure substantially enhances the wave-function overlap and the size of the magnetic gap at the Dirac point, as recently predicted. Mn-doped Bi$_2$Se$_3$ forms a similar heterostructure, however, only a large, nonmagnetic gap is formed. We explain both differences based on the higher spin-orbit interaction in Bi$_2$Te$_3$ with the most important consequence of a magnetic anisotropy perpendicular to the films, whereas for Bi$_2$Se$_3$ the spin-orbit interaction it is too weak to overcome the dipole-dipole interaction. Our findings provide crucial insights for pushing the lossless transport properties of topological insulators towards room-temperature applications.
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Submitted 15 October, 2018;
originally announced October 2018.
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Impact of ultrafast transport on the high-energy states of a photoexcited topological insulator
Authors:
F. Freyse,
M. Battiato,
L. V. Yashina,
J. Sánchez-Barriga
Abstract:
Ultrafast dynamics in three-dimensional topological insulators (TIs) opens new routes for increasing the speed of information transport up to frequencies thousand times faster than in modern electronics. However, up to date, disentangling the exact contributions from bulk and surface transport to the subpicosecond dynamics of these materials remains a difficult challenge. Here, using time- and ang…
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Ultrafast dynamics in three-dimensional topological insulators (TIs) opens new routes for increasing the speed of information transport up to frequencies thousand times faster than in modern electronics. However, up to date, disentangling the exact contributions from bulk and surface transport to the subpicosecond dynamics of these materials remains a difficult challenge. Here, using time- and angle-resolved photoemission, we demonstrate that driving a TI from the bulk-conducting into the bulk-insulating transport regime allows to selectively switch on and off the emergent channels of ultrafast transport between the surface and the bulk. We thus establish that ultrafast transport is one of the main driving mechanisms responsible for the decay of excited electrons in prototypical TIs following laser excitation. We further show how ultrafast transport strongly affects the thermalization and scattering dynamics of the excited states up to high energies above the Fermi level. In particular, we observe how inhibiting the transport channels leads to a thermalization bottleneck that substantially slows down electron-hole recombination via electron-electron scatterings. Our results pave the way for exploiting ultrafast transport to control thermalization time scales in TI-based optoelectronic applications, and expand the capabilities of TIs as intrinsic solar cells.
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Submitted 21 September, 2018;
originally announced September 2018.
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Anomalous behavior of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ across the quantum-phase transition from topological to trivial insulator
Authors:
J. Sánchez-Barriga,
I. Aguilera,
L. V. Yashina,
D. Y. Tsukanova,
F. Freyse,
A. N. Chaika,
A. M. Abakumov,
A. Varykhalov,
E. D. L. Rienks,
G. Bihlmayer,
S. Blügel,
O. Rader
Abstract:
Using spin- and angle-resolved spectroscopy and relativistic many-body calculations, we investigate the evolution of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ bulk single crystals around the critical point of the trivial to topological insulator quantum-phase transition. By increasing $x$, we observe how a surface gap opens at the Dirac point of the initially gapless topological sur…
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Using spin- and angle-resolved spectroscopy and relativistic many-body calculations, we investigate the evolution of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ bulk single crystals around the critical point of the trivial to topological insulator quantum-phase transition. By increasing $x$, we observe how a surface gap opens at the Dirac point of the initially gapless topological surface state of Bi$_2$Se$_3$, leading to the existence of massive fermions. The surface gap monotonically increases for a wide range of $x$ values across the topological and trivial sides of the quantum-phase transition. By means of photon-energy dependent measurements, we demonstrate that the gapped surface state survives the inversion of the bulk bands which occurs at a critical point near $x=0.055$. The surface state exhibits a non-zero in-plane spin polarization which decays exponentially with increasing $x$, and that persists on both the topological and trivial insulator phases. Its out-of-plane spin polarization remains zero demonstrating the absence of a hedgehog spin texture expected from broken time-reversal symmetry. Our calculations reveal qualitative agreement with the experimental results all across the quantum-phase transition upon the systematic variation of the spin-orbit coupling strength. A non-time reversal symmetry breaking mechanism of bulk-mediated scattering processes that increase with decreasing spin-orbit coupling strength is proposed as explanation.
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Submitted 3 July, 2018;
originally announced July 2018.
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Strong spin dependence of correlation effects in Ni due to Stoner excitations
Authors:
J. Sánchez-Barriga,
R. Ovsyannikov,
J. Fink
Abstract:
Using high-resolution angle-resolved photoemission, we observe a strong spin-dependent renormalization and lifetime broadening of the quasiparticle excitations in the electronic band structure of Ni(111) in an energy window of $\sim$0.3 eV below the Fermi level. We derive a quantitative result for the spin-dependent lifetime broadening by comparing the scattering rates of majority and minority…
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Using high-resolution angle-resolved photoemission, we observe a strong spin-dependent renormalization and lifetime broadening of the quasiparticle excitations in the electronic band structure of Ni(111) in an energy window of $\sim$0.3 eV below the Fermi level. We derive a quantitative result for the spin-dependent lifetime broadening by comparing the scattering rates of majority and minority $d$ states, and further show that spin-dependent electron correlations are instead negligible for $sp$ states. From our analysis we experimentally determine the effective on-site Coulomb interaction $U$ caused by Stoner-like interband transitions between majority and minority $d$ states. The present results unambiguously demonstrate the remarkable impact of spin-dependent electron correlation effects originating from single-particle excitations in a prototypical 3$d$ transition metal, paving the way for further refinement of current many-body theoretical approaches.
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Submitted 24 May, 2018;
originally announced May 2018.
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Band renormalization of blue phosphorus on Au(111)
Authors:
E. Golias,
M. Krivenkov,
A. Varykhalov,
J. Sánchez-Barriga,
O. Rader
Abstract:
Most recently, theoretical calculations predicted the stability of a novel two-dimensional phosphorus honeycomb lattice named blue phosphorus. Here, we report on the growth of blue phosphorus on Au(111) and unravel its structural details using diffraction, microscopy and theoretical calculations. Most importantly, by utilizing angle-resolved photoemission spectroscopy we identify its momentum-reso…
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Most recently, theoretical calculations predicted the stability of a novel two-dimensional phosphorus honeycomb lattice named blue phosphorus. Here, we report on the growth of blue phosphorus on Au(111) and unravel its structural details using diffraction, microscopy and theoretical calculations. Most importantly, by utilizing angle-resolved photoemission spectroscopy we identify its momentum-resolved electronic structure. We find that Au(111) breaks the sublattice symmetry of blue phosphorus leading to an orbital-dependent band renormalization upon the formation of a (4x4) superstructure. Notably, the semiconducting two-dimensional phosphorus realizes its valence band maximum at 0.9 eV binding energy, however, shifted in momentum space due to the substrate-induced band renormalization.
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Submitted 1 September, 2018; v1 submitted 23 March, 2018;
originally announced March 2018.
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Mapping the band structure of GeSbTe phase change alloys around the Fermi level
Authors:
Jens Kellner,
Gustav Bihlmayer,
Marcus Liebmann,
Sebastian Otto,
Christian Pauly,
Jos Emiel Boschker,
Valeria Bragaglia,
Stefano Cecchi,
Rui Ning Wang,
Volker L. Deringer,
Philipp Küppers,
Priyamvada Bhaskar,
Evangelos Golias,
Jaime Sánchez-Barriga,
Richard Dronskowski,
Thomas Fauster,
Oliver Rader,
Raffaella Calarco,
Markus Morgenstern
Abstract:
Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence…
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Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence band close to the Fermi level are hexagonal tubes with little dispersion perpendicular to the (111) surface. The electron density responsible for transport belongs to the tails of this bulk valence band, which is broadened by disorder, i.e., the Fermi level is 100 meV above the valence band maximum. This result is consistent with transport data of such films in terms of charge carrier density and scattering time. In addition, we find a state in the bulk band gap with linear dispersion, which might be of topological origin.
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Submitted 17 January, 2018; v1 submitted 29 August, 2017;
originally announced August 2017.
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High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$
Authors:
Marco Busch,
Olivio Chiatti,
Sergio Pezzini,
Steffen Wiedmann,
Jaime Sánchez-Barriga,
Oliver Rader,
Lada V. Yashina,
Saskia F. Fischer
Abstract:
Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional…
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Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in bulk Bi$_2$Se$_3$ with a high electron density $n$ of about $2\!\cdot\!10^{19}$ cm$^{-3}$. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi$_2$Se$_3$ and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance.
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Submitted 28 July, 2017;
originally announced July 2017.
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Suppression of electron scattering resonances in graphene by quantum dots
Authors:
M. Krivenkov,
D. Marchenko,
J. Sánchez-Barriga,
O. Rader,
A. Varykhalov
Abstract:
Transmission of low-energetic electrons through two-dimensional materials leads to unique scattering resonances. These resonances contribute to photoemission from occupied bands where they appear as strongly dispersive features of suppressed photoelectron intensity. Using angle-resolved photoemission we have systematically studied scattering resonances in epitaxial graphene grown on the chemically…
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Transmission of low-energetic electrons through two-dimensional materials leads to unique scattering resonances. These resonances contribute to photoemission from occupied bands where they appear as strongly dispersive features of suppressed photoelectron intensity. Using angle-resolved photoemission we have systematically studied scattering resonances in epitaxial graphene grown on the chemically differing substrates Ir(111), Bi/Ir, Ni(111) as well as in graphene/Ir(111) nanopatterned with a superlattice of uniform Ir quantum dots. While the strength of the chemical interaction with the substrate has almost no effect on the dispersion of the scattering resonances, their energy can be controlled by the magnitude of charge transfer from/to graphene. At the same time, a superlattice of small quantum dots deposited on graphene eliminates the resonances completely. We ascribe this effect to a nanodot-induced buckling of graphene and its local rehybridization from sp$^{2}$ to sp$^{3}$ towards a three-dimensional structure. Our results suggest nanopatterning as a prospective tool for tuning optoelectronic properties of two-dimensional materials with graphene-like structure.
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Submitted 18 July, 2017;
originally announced July 2017.
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Laser-induced persistent photovoltage on the surface of a ternary topological insulator at room temperature
Authors:
J. Sánchez-Barriga,
M. Battiato,
E. Golias,
A. Varykhalov,
L. V. Yashina,
O. Kornilov,
O. Rader
Abstract:
Using time- and angle-resolved photoemission, we investigate the ultrafast response of excited electrons in the ternary topological insulator (Bi$_{1 x}$Sb$_{x}$)$_2$Te$_3$ to fs-infrared pulses. We demonstrate that at the critical concentration $x$=0.55, where the system becomes bulk insulating, a surface voltage can be driven at room temperature through the topological surface state solely by op…
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Using time- and angle-resolved photoemission, we investigate the ultrafast response of excited electrons in the ternary topological insulator (Bi$_{1 x}$Sb$_{x}$)$_2$Te$_3$ to fs-infrared pulses. We demonstrate that at the critical concentration $x$=0.55, where the system becomes bulk insulating, a surface voltage can be driven at room temperature through the topological surface state solely by optical means. We further show that such a photovoltage persists over a time scale that exceeds $\sim$6 $μ$s, i.e, much longer than the characteristic relaxation times of bulk states. We attribute the origin of the photovoltage to a laser-induced band-bending effect which emerges near the surface region on ultrafast time scales. The photovoltage is also accompanied by a remarkable increase in the relaxation times of excited states as compared to undoped topological insulators. Our findings are relevant in the context of applications of topological surface states in future optical devices.
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Submitted 19 May, 2017;
originally announced May 2017.
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Sub-picosecond spin dynamics of excited states in the topological insulator Bi$_2$Te$_3$
Authors:
J. Sánchez-Barriga,
M. Battiato,
M. Krivenkov,
E. Golias,
A. Varykhalov,
A. Romualdi,
L. V. Yashina,
J. Minár,
O. Kornilov,
H. Ebert,
K. Held,
J. Braun
Abstract:
Using time-, spin- and angle-resolved photoemission, we investigate the ultrafast spin dynamics of hot electrons on the surface of the topological insulator Bi$_2$Te$_3$ following optical excitation by fs-infrared pulses. We observe two surface-resonance states above the Fermi level coexisting with a transient population of Dirac fermions that relax in about $\sim$2 ps. One state is located below…
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Using time-, spin- and angle-resolved photoemission, we investigate the ultrafast spin dynamics of hot electrons on the surface of the topological insulator Bi$_2$Te$_3$ following optical excitation by fs-infrared pulses. We observe two surface-resonance states above the Fermi level coexisting with a transient population of Dirac fermions that relax in about $\sim$2 ps. One state is located below $\sim$0.4 eV just above the bulk continuum, the other one at $\sim$0.8 eV inside a projected bulk band gap. At the onset of the excitation, both states exhibit a reversed spin texture with respect to that of the transient Dirac bands, in agreement with our one-step photoemission calculations. Our data reveal that the high-energy state undergoes spin relaxation within $\sim$0.5 ps, a process that triggers the subsequent spin dynamics of both the Dirac cone and the low-energy state, which behave as two dynamically-locked electron populations. We discuss the origin of this behavior by comparing the relaxation times observed for electrons with opposite spins to the ones obtained from a microscopic Boltzmann model of ultrafast band cooling introduced into the photoemission calculations. Our results demonstrate that the nonequilibrium surface dynamics is governed by electron-electron rather than electron-phonon scattering, with a characteristic time scale unambiguously determined by the complex spin texture of excited states above the Fermi level. Our findings reveal the critical importance of detecting momentum and energy-resolved spin textures with fs resolution to fully understand the sub-ps dynamics of transient electrons on the surface of topological insulators.
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Submitted 19 May, 2017;
originally announced May 2017.
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Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials
Authors:
B. A. Assaf,
T. Phuphachong,
E. Kampert,
V. V. Volobuev,
P. S. Mandal,
J. Sánchez-Barriga,
O. Rader,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when…
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Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when the system becomes trivial. In a topological material, the lowest N=0 conduction Landau level disperses down in energy as a function of increasing magnetic field, while the N=0 valence Landau level disperses upwards. This anomalous behavior is shown to be responsible for the observed NLMR. Our work provides an explanation of the outstanding question of NLMR in topological insulators and establishes this effect as a possible hallmark of bulk conduction in topological matter.
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Submitted 11 August, 2017; v1 submitted 6 April, 2017;
originally announced April 2017.
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Observation of antiphase coherent phonons in the warped Dirac cone of Bi$_2$Te$_3$
Authors:
E. Golias,
J. Sánchez-Barriga
Abstract:
In this Rapid Communication we investigate the coupling between excited electrons and phonons in the highly anisotropic electronic structure of the prototypical topological insulator Bi$_2$Te$_3$. Using time- and angle-resolved photoemission spectroscopy we are able to identify the emergence and ultrafast temporal evolution of the longitudinal-optical A$_{1g}$ coherent-phonon mode in Bi$_2$Te$_3$.…
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In this Rapid Communication we investigate the coupling between excited electrons and phonons in the highly anisotropic electronic structure of the prototypical topological insulator Bi$_2$Te$_3$. Using time- and angle-resolved photoemission spectroscopy we are able to identify the emergence and ultrafast temporal evolution of the longitudinal-optical A$_{1g}$ coherent-phonon mode in Bi$_2$Te$_3$. We observe an antiphase behavior in the onset of the coherent-phonon oscillations between the $\overline{ΓK}$ and the $\overline{ΓM}$ high-symmetry directions that is consistent with warping. The qualitative agreement between our density-functional theory calculations and the experimental results reveals the critical role of the anisotropic coupling between Dirac fermions and phonon modes in the topological insulator Bi$_2$Te$_3$.
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Submitted 11 October, 2016;
originally announced October 2016.
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Surface Fermi arc connectivity in the type-II Weyl semimetal candidate WTe$_{2}$
Authors:
J. Sánchez-Barriga,
M. G. Vergniory,
D. Evtushinsky,
I. Aguilera,
A. Varykhalov,
S. Blügel,
O. Rader
Abstract:
We perform ultrahigh resolution angle-resolved photoemission experiments at a temperature T=0.8 K on the type-II Weyl semimetal candidate WTe$_{2}$. We find a surface Fermi arc connecting the bulk electron and hole pockets on the (001) surface. Our results show that the surface Fermi arc connectivity to the bulk bands is strongly mediated by distinct surface resonances dispersing near the border o…
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We perform ultrahigh resolution angle-resolved photoemission experiments at a temperature T=0.8 K on the type-II Weyl semimetal candidate WTe$_{2}$. We find a surface Fermi arc connecting the bulk electron and hole pockets on the (001) surface. Our results show that the surface Fermi arc connectivity to the bulk bands is strongly mediated by distinct surface resonances dispersing near the border of the surface-projected bulk band gap. By comparing the experimental results to first-principles calculations we argue that the coupling to these surface resonances, which are topologically trivial, is compatible with the classification of WTe$_{2}$ as a type-II Weyl semimetal hosting topological Fermi arcs. We further support our conclusion by a systematic characterization of the bulk and surface character of the different bands and discuss the similarity of our findings to the case of topological insulators.
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Submitted 19 August, 2016;
originally announced August 2016.
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Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi$_{1-x}$Mn$_x)_2$Se$_3$
Authors:
J. Sánchez-Barriga,
A. Varykhalov,
G. Springholz,
H. Steiner,
R. Kirchschlager,
G. Bauer,
O. Caha,
E. Schierle,
E. Weschke,
A. A. Ünal,
S. Valencia,
M. Dunst,
J. Braun,
H. Ebert,
J. Minár,
E. Golias,
L. V. Yashina,
A. Ney,
V. Holý,
O. Rader
Abstract:
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surf…
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Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn doping does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a novel mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection.
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Submitted 9 March, 2016;
originally announced March 2016.
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Absence of Giant Spin Splitting in the Two-Dimensional Electron Liquid at the Surface of SrTiO$_3$ (001)
Authors:
S. McKeown Walker,
S Riccò,
F. Y. Bruno,
A. de la Torre,
A. Tamai,
E. Golias,
A. Varykhalov,
D. Marchenko,
M. Hoesch,
M. S. Bahramy,
P. D. C. King,
J. Sánchez-Barriga,
F. Baumberger
Abstract:
We reinvestigate the putative giant spin splitting at the surface of SrTiO$_3$ reported by Santander-Syro $et~al.$ [Nature Mat. 13, 1085 (2014)]. Our spin- and angle-resolved photoemission experiments on (001) oriented surfaces supporting a two-dimensional electron liquid with high carrier density show no detectable spin polarization in the photocurrent. We demonstrate that this result excludes a…
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We reinvestigate the putative giant spin splitting at the surface of SrTiO$_3$ reported by Santander-Syro $et~al.$ [Nature Mat. 13, 1085 (2014)]. Our spin- and angle-resolved photoemission experiments on (001) oriented surfaces supporting a two-dimensional electron liquid with high carrier density show no detectable spin polarization in the photocurrent. We demonstrate that this result excludes a giant spin splitting while it is fully consistent with the unconventional Rashba-like splitting seen in band structure calculations that reproduce the experimentally observed ladder of quantum confined subbands.
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Submitted 1 March, 2016;
originally announced March 2016.
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2D layered transport properties from topological insulator Bi$_2$Se$_3$ single crystals and micro flakes
Authors:
Olivio Chiatti,
Christian Riha,
Dominic Lawrenz,
Marco Busch,
Srujana Dusari,
Jaime Sánchez-Barriga,
Anna Mogilatenko,
Lada V. Yashina,
Sergio Valencia,
Akin A. Ünal,
Oliver Rader,
Saskia F. Fischer
Abstract:
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related…
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Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi$_2$Se$_3$ single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.
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Submitted 6 June, 2016; v1 submitted 4 December, 2015;
originally announced December 2015.
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Ferrimagnetic nanostructures for magnetic memory bits
Authors:
A. A. Ünal,
S. Valencia,
D. Marchenko,
K. J. Merazzo,
F. Radu,
M. Vázquez,
J. Sánchez-Barriga
Abstract:
Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted that the near future of magnetic data storage technology involves a combination of energy-assisted recording on nanometer-scale magnetic media. We present the p…
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Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted that the near future of magnetic data storage technology involves a combination of energy-assisted recording on nanometer-scale magnetic media. We present the potential of heat-assisted magnetic recording on a patterned sample; a ferrimagnetic alloy composed of a rare earth and a transition metal, DyCo$_5$, which is grown on a hexagonal-ordered nanohole array membrane. The magnetization of the antidot array sample is out-of-plane oriented at room temperature and rotates towards in-plane upon heating above its spin-reorientation temperature (T$_R$) of ~350 K, just above room temperature. Upon cooling back to room temperature (below T$_R$), we observe a well-defined and unexpected in-plane magnetic domain configuration modulating with ~45 nm. We discuss the underlying mechanisms giving rise to this behavior by comparing the magnetic properties of the patterned sample with the ones of its extended thin film counterpart. Our results pave the way for novel applications of ferrimagnetic antidot arrays of superior functionality in magnetic nano-devices near room temperature.
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Submitted 17 October, 2015;
originally announced October 2015.
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Rashba splitting of 100 meV in Au-intercalated graphene on SiC
Authors:
D. Marchenko,
A. Varykhalov,
J. Sánchez-Barriga,
Th. Seyller,
O. Rader
Abstract:
Intercalation of Au can produce giant Rashba-type spin-orbit splittings in graphene but this has not yet been achieved on a semiconductor substrate. For graphene/SiC(0001), Au intercalation yields two phases with different doping. Here, we report the preparation of an almost pure p-type graphene phase after Au intercalation. We observe a 100 meV Rashba-type spin-orbit splitting at 0.9 eV binding e…
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Intercalation of Au can produce giant Rashba-type spin-orbit splittings in graphene but this has not yet been achieved on a semiconductor substrate. For graphene/SiC(0001), Au intercalation yields two phases with different doping. Here, we report the preparation of an almost pure p-type graphene phase after Au intercalation. We observe a 100 meV Rashba-type spin-orbit splitting at 0.9 eV binding energy. We show that this giant splitting is due to hybridization and much more limited in energy and momentum space than for Au-intercalated graphene on Ni.
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Submitted 8 October, 2015;
originally announced October 2015.
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Tailoring the nature and strength of electron-phonon interactions in the SrTiO$_3$(001) two-dimensional electron liquid
Authors:
Z. Wang,
S. McKeown Walker,
A. Tamai,
Y. Wang,
Z. Ristic,
F. Y. Bruno,
A. de la Torre,
S. Riccò,
N. C. Plumb,
M. Shi,
P. Hlawenka,
J. Sánchez-Barriga,
A. Varykhalov,
T. K. Kim,
M. Hoesch,
P. D. C. King,
W. Meevasana,
U. Diebold,
J. Mesot,
B. Moritz,
T. P. Devereaux,
M. Radovic,
F. Baumberger
Abstract:
Surfaces and interfaces offer new possibilities for tailoring the many-body interactions that dominate the electrical and thermal properties of transition metal oxides. Here, we use the prototypical two-dimensional electron liquid (2DEL) at the SrTiO$_3$(001) surface to reveal a remarkably complex evolution of electron-phonon coupling with the tunable carrier density of this system. At low density…
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Surfaces and interfaces offer new possibilities for tailoring the many-body interactions that dominate the electrical and thermal properties of transition metal oxides. Here, we use the prototypical two-dimensional electron liquid (2DEL) at the SrTiO$_3$(001) surface to reveal a remarkably complex evolution of electron-phonon coupling with the tunable carrier density of this system. At low density, where superconductivity is found in the analogous 2DEL at the LaAlO$_3$/SrTiO$_3$ interface, our angle-resolved photoemission data show replica bands separated by 100\,meV from the main bands. This is a hallmark of a coherent polaronic liquid and implies strong long-range coupling to a single longitudinal optical phonon mode. In the overdoped regime the preferential coupling to this mode decreases and the 2DEL undergoes a crossover to a more conventional metallic state with weaker short-range electron-phonon interaction. These results place constraints on the theoretical description of superconductivity and allow for a unified understanding of the transport properties in SrTiO$_3$-based 2DELs.
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Submitted 19 February, 2016; v1 submitted 3 June, 2015;
originally announced June 2015.
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Ultrafast spin polarization control of Dirac fermions in topological insulators
Authors:
J. Sánchez-Barriga,
E. Golias,
A. Varykhalov,
J. Braun,
L. V. Yashina,
R. Schumann,
J. Minár,
H. Ebert,
O. Kornilov,
O. Rader
Abstract:
Three-dimensional topological insulators (TIs) are characterized by spin-polarized Dirac-cone surface states that are protected from backscattering by time-reversal symmetry. Control of the spin polarization of topological surface states (TSSs) using femtosecond light pulses opens novel perspectives for the generation and manipulation of dissipationless surface spin currents on ultrafast timescale…
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Three-dimensional topological insulators (TIs) are characterized by spin-polarized Dirac-cone surface states that are protected from backscattering by time-reversal symmetry. Control of the spin polarization of topological surface states (TSSs) using femtosecond light pulses opens novel perspectives for the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Using time-, spin-, and angle-resolved spectroscopy, we directly monitor for the first time the ultrafast response of the spin polarization of photoexcited TSSs to circularly-polarized femtosecond pulses of infrared light. We achieve all-optical switching of the transient out-of-plane spin polarization, which relaxes in about 1.2 ps. Our observations establish the feasibility of ultrafast optical control of spin-polarized Dirac fermions in TIs and pave the way for novel optospintronic applications at ultimate speeds.
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Submitted 11 May, 2015;
originally announced May 2015.
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Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb and Fe
Authors:
N. de Jong,
E. Frantzeskakis,
B. Zwartsenberg,
Y. K. Huang,
D. Wu,
P. Hlawenka,
J. Sánchez-Barriga,
A. Varykhalov,
E. van Heumen,
M. S. Golden
Abstract:
Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved and core-level photoemission. Fe, Nb and Ag were evaporated onto Bi1.5Sb0.5Te1.7Se1.3 (BSTS) surfaces both at room temperature and 38K. The coverage- and temperature-dependence of the adsorption and interfacial formation process have been investigated, highli…
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Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved and core-level photoemission. Fe, Nb and Ag were evaporated onto Bi1.5Sb0.5Te1.7Se1.3 (BSTS) surfaces both at room temperature and 38K. The coverage- and temperature-dependence of the adsorption and interfacial formation process have been investigated, highlighting the effects of the overlayer growth on the occupied electronic structure of the TI. For all coverages at room temperature and for those equivalent to less than 0.1 monolayer at low temperature all three metals lead to a downward shift of the TI's bands with respect to the Fermi level. At room temperature Ag appears to intercalate efficiently into the van der Waals gap of BSTS, accompanied by low-level substitution of the Te/Se atoms of the termination layer of the crystal. This Te/Se substitution with silver increases significantly for low temperature adsorption, and can even dominate the electrostatic environment of the Bi/Sb atoms in the BSTS near-surface region. On the other hand, Fe and Nb evaporants remain close to the termination layer of the crystal. On room temperature deposition, they initially substitute isoelectronically for Bi as a function of coverage, before substituting for Te/Se atoms. For low temperature deposition, Fe and Nb are too immobile for substitution processes and show a behaviour consistent with clustering on the surface. For both Ag and Fe/Nb, these differing adsorption pathways leads to the qualitatively similar and remarkable behavior for low temperature deposition that the chemical potential first moves upward (n-type dopant behavior) and then downward (p-type behavior) on increasing coverage.
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Submitted 27 August, 2015; v1 submitted 28 April, 2015;
originally announced April 2015.
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Anisotropic effect of warping on the lifetime broadening of topological surface states in angle-resolved photoemission from Bi$_2$Te$_3$
Authors:
J. Sánchez-Barriga,
M. R. Scholz,
E. Golias,
E. Rienks,
D. Marchenko,
A. Varykhalov,
L. V. Yashina,
O. Rader
Abstract:
We analyze the strong hexagonal warping of the Dirac cone of Bi$_2$Te$_3$ by angle-resolved photoemission. Along $\overlineΓ$$\overline{\rm M}$, the dispersion deviates from a linear behavior meaning that the Dirac cone is warped outwards and not inwards. We show that this introduces an anisotropy in the lifetime broadening of the topological surface state which is larger along $\overlineΓ$…
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We analyze the strong hexagonal warping of the Dirac cone of Bi$_2$Te$_3$ by angle-resolved photoemission. Along $\overlineΓ$$\overline{\rm M}$, the dispersion deviates from a linear behavior meaning that the Dirac cone is warped outwards and not inwards. We show that this introduces an anisotropy in the lifetime broadening of the topological surface state which is larger along $\overlineΓ$$\overline{\rm K}$. The result is not consistent with nesting. Based on the theoretically predicted behavior of the ground-state spin texture of a strongly warped Dirac cone, we propose spin-dependent scattering processes as explanation for the anisotropic scattering rates. These results could help paving the way for optimizing future spintronic devices using topological insulators and controlling surface-scattering processes via external gate voltages.
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Submitted 7 April, 2015;
originally announced April 2015.
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Samarium hexaboride: A trivial surface conductor
Authors:
P. Hlawenka,
K. Siemensmeyer,
E. Weschke,
A. Varykhalov,
J. Sánchez-Barriga,
N. Y. Shitsevalova,
A. V. Dukhnenko,
V. B. Filipov,
S. Gabáni,
K. Flachbart,
O. Rader,
E. D. L. Rienks
Abstract:
Recent theoretical and experimental studies suggest that SmB$_6$ is the first topological Kondo insulator: A material in which the interaction between localized and itinerant electrons renders the bulk insulating at low temperature, while topological surface states leave the surface metallic. While this would elegantly explain the material's puzzling conductivity, we find the experimentally observ…
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Recent theoretical and experimental studies suggest that SmB$_6$ is the first topological Kondo insulator: A material in which the interaction between localized and itinerant electrons renders the bulk insulating at low temperature, while topological surface states leave the surface metallic. While this would elegantly explain the material's puzzling conductivity, we find the experimentally observed candidates for both predicted topological surface states to be of trivial character instead: The surface state at $\barΓ$ is very heavy and shallow with a mere $\sim 2$ meV binding energy. It exhibits large Rashba splitting which excludes a topological nature. We further demonstrate that the other metallic surface state, located at $\bar{X}$, is not an independent in-gap state as supposed previously, but part of a massive band with much higher binding energy (1.7 eV). We show that it remains metallic down to 1 K due to reduced hybridization with the energy-shifted surface 4$f$ level.
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Submitted 5 February, 2015;
originally announced February 2015.
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Observation of Quantum-Tunneling Modulated Spin Texture in Ultrathin Topological Insulator Bi2Se3 Films
Authors:
Madhab Neupane,
Anthony Richardella,
Jaime Sánchez-Barriga,
Su-Yang Xu,
Nasser Alidoust,
Ilya Belopolski,
Chang Liu,
Guang Bian,
Duming Zhang,
Dmitry Marchenko,
Andrei Varykhalov,
Oliver Rader,
Mats Leandersson,
Thiagarajan Balasubramanian,
Tay-Rong Chang,
Horng-Tay Jeng,
Susmita Basak,
Hsin Lin,
Arun Bansil,
Nitin Samarth,
M. Zahid Hasan
Abstract:
Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunneling-dependent evolution of spin configuration in topological insulator thin film…
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Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunneling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We observe strongly binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultra-thin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model which captures this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device.
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Submitted 10 April, 2014;
originally announced April 2014.
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Photoemission of Bi$_2$Se$_3$ with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?
Authors:
J. Sánchez-Barriga,
A. Varykhalov,
J. Braun,
S. -Y. Xu,
N. Alidoust,
O. Kornilov,
J. Minár,
K. Hummer,
G. Springholz,
G. Bauer,
R. Schumann,
L. V. Yashina,
H. Ebert,
M. Z. Hasan,
O. Rader
Abstract:
Topological insulators are characterized by Dirac cone surface states with electron spins aligned in the surface plane and perpendicular to their momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved ph…
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Topological insulators are characterized by Dirac cone surface states with electron spins aligned in the surface plane and perpendicular to their momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50-70 eV) with linear or circular polarization probe indeed the initial state spin texture of Bi$_2$Se$_3$ while circularly polarized 6 eV low energy photons flip the electron spins out of plane and reverse their spin polarization. Our photoemission calculations, considering the interplay between the varying probing depth, dipole selection rules and spin-dependent scattering effects involving initial and final states explain these findings, and reveal proper conditions for light-induced spin manipulation. This paves the way for future applications of topological insulators in opto-spintronic devices.
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Submitted 3 October, 2013;
originally announced October 2013.
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Anisotropic two-dimensional electron gas at SrTiO3(110) protected by its native overlayer
Authors:
Zhiming Wang,
Zhicheng Zhong,
Xianfeng Hao,
Stefan Gerhold,
Bernhard Stoger,
Michael Schmid,
Jaime Sanchez-Barriga,
Andrei Varykhalov,
Cesare Franchini,
Karsten Held,
Ulrike Diebold
Abstract:
Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a 2DEG -the SrTiO3(110)-(4 x 1) surface, natively terminated with one monolayer of chemically-inert titania. Oxygen vacancies induced by synchrotron radiation migra…
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Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a 2DEG -the SrTiO3(110)-(4 x 1) surface, natively terminated with one monolayer of chemically-inert titania. Oxygen vacancies induced by synchrotron radiation migrate under- neath this overlayer, this leads to a confining potential and electron doping such that a 2DEG develops. Our angular resolved photoemission spectroscopy (ARPES) and theoretical results show that confinement along (110) is strikingly different from a (001) crystal orientation. In particular the quantized subbands show a surprising "semi-heavy" band, in contrast to the analogue in the bulk, and a high electronic anisotropy. This anisotropy and even the effective mass of the (110) 2DEG is tunable by doping, offering a high flexibility to engineer the properties of this system.
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Submitted 26 September, 2013;
originally announced September 2013.
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Evidence for topological band inversion of the phase change material Ge2Sb2Te5
Authors:
Christian Pauly,
Marcus Liebmann,
Alessandro Giussani,
Jens Kellner,
Sven Just,
Jaime Sánchez-Barriga,
Emile Rienks,
Oliver Rader,
Raffaella Calarco,
Gustav Bihlmayer,
Markus Morgenstern
Abstract:
We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at Gamma-bar being 0.3 eV below the Fermi level E_F and a circular Fermi contour around Gamma-bar with a dispersing diameter of 0.27-0.36 Anstroms^-1. This is in agreement with density…
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We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at Gamma-bar being 0.3 eV below the Fermi level E_F and a circular Fermi contour around Gamma-bar with a dispersing diameter of 0.27-0.36 Anstroms^-1. This is in agreement with density functional theory calculations of the Petrov stacking sequence in the cubic phase which exhibits a topological surface state. The topologically trivial cubic KH stacking shows a valence band maximum at Gamma in line with all previous calculations of the hexagonal stable phase exhibiting the valence band maximum at Gamma for a trivial Z_2 topological invariant nu_0 and away from Gamma for non-trivial nu_0. Scanning tunneling spectroscopy exhibits a band gap of 0.4 eV around E_F.
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Submitted 28 November, 2013; v1 submitted 27 August, 2013;
originally announced August 2013.
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Tunneling Tuned Spin Modulations in Ultrathin Topological Insulator Films
Authors:
M. Neupane,
A. Richardella,
J. Sanchez-Barriga,
S. -Y. Xu,
N. Alidoust,
I. Belopolski,
Chang Liu,
G. Bian,
D. M. Zhang,
D. Marchenko,
A. Varykhalov,
O. Rader,
M. Leandersson,
T. Balasubramanian,
T. -R. Chang,
H. -T. Jeng,
S. Basak,
H. Lin,
A. Bansil,
N. Samarth,
M. Z. Hasan
Abstract:
Quantitative understanding of the relationship between quantum tunneling and Fermi surface spin polarization is key to device design using topological insulator surface states. By using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films across the metal-to-insulator transition, we observe that for a given film thickness, the spin polarization…
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Quantitative understanding of the relationship between quantum tunneling and Fermi surface spin polarization is key to device design using topological insulator surface states. By using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films across the metal-to-insulator transition, we observe that for a given film thickness, the spin polarization is large for momenta far from the center of the surface Brillouin zone. In addition, the polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. Our theoretical model calculations capture this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device.
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Submitted 20 July, 2013;
originally announced July 2013.
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Reversal of the circular dichroism in the angle-resolved photoemission from Bi2Te3
Authors:
M. R. Scholz,
J. Sánchez-Barriga,
J. Braun,
D. Marchenko,
A. Varykhalov,
M. Lindroos,
Yung Jui Wang,
Hsin Lin,
A. Bansil,
J. Minár,
H. Ebert,
A. Volykhov,
L. V. Yashina,
O. Rader
Abstract:
The helical Dirac fermions at the surface of topological insulators show a strong circular dichroism which has been explained as being due to either the initial-state spin angular momentum, the initial-state orbital angular momentum, or the handedness of the experimental setup. All of these interpretations conflict with our data from Bi2Te3 which depend on the photon energy and show several sign c…
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The helical Dirac fermions at the surface of topological insulators show a strong circular dichroism which has been explained as being due to either the initial-state spin angular momentum, the initial-state orbital angular momentum, or the handedness of the experimental setup. All of these interpretations conflict with our data from Bi2Te3 which depend on the photon energy and show several sign changes. Our one-step photoemission calculations coupled to ab initio theory confirm the sign change and assign the dichroism to a final-state effect. The spin polarization of the photoelectrons, instead, remains a reliable probe for the spin in the initial state.
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Submitted 25 March, 2013;
originally announced March 2013.
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Massless Dirac fermions in epitaxial graphene on Fe(110)
Authors:
A. Varykhalov,
J. Sánchez-Barriga,
P. Hlawenka,
O. Rader
Abstract:
Graphene grown on Fe(110)by chemical vapor deposition using propylene is investigated by means of angle-resolved photoemission. The presence of massless Dirac fermions is clearly evidenced by the observation of a fully intact Dirac cone. Unlike Ni(111) and Co(0001), the Fe(110) imposes a strongly anisotropic quasi-one-dimensional structure on the graphene. Certain signatures of a superlattice effe…
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Graphene grown on Fe(110)by chemical vapor deposition using propylene is investigated by means of angle-resolved photoemission. The presence of massless Dirac fermions is clearly evidenced by the observation of a fully intact Dirac cone. Unlike Ni(111) and Co(0001), the Fe(110) imposes a strongly anisotropic quasi-one-dimensional structure on the graphene. Certain signatures of a superlattice effect appear in the dispersion of its σ-bands but the Dirac cone does not reveal any detectable superlattice or quantum-size effects although the graphene corrugation is twice as large as in the established two-dimensional graphene superlattice on Ir(111).
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Submitted 31 December, 2012;
originally announced December 2012.
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Hedgehog Spin-texture and Berry's Phase tuning in a Magnetic Topological Insulator
Authors:
Su-Yang Xu,
Madhab Neupane,
Chang Liu,
Duming Zhang,
Anthony Richardella,
L. Andrew Wray,
Nasser Alidoust,
Mats Leandersson,
Thiagarajan Balasubramanian,
Jaime Sánchez-Barriga,
Oliver Rader,
Gabriel Landolt,
Bartosz Slomski,
Jan Hugo Dil,
Jürg Osterwalder,
Tay-Rong Chang,
Horng-Tay Jeng,
Hsin Lin,
Arun Bansil,
Nitin Samarth,
M. Zahid Hasan
Abstract:
Understanding and control of spin degrees of freedom on the surfaces of topological materials are key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal (TR) symmetry breaking on the surface. We experimentally demonstrate magnetically induced spin reorientation phenomena simultaneous with a Dirac-metal to gapped-insulator t…
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Understanding and control of spin degrees of freedom on the surfaces of topological materials are key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal (TR) symmetry breaking on the surface. We experimentally demonstrate magnetically induced spin reorientation phenomena simultaneous with a Dirac-metal to gapped-insulator transition on the surfaces of manganese-doped Bi2Se3 thin films. The resulting electronic groundstate exhibits unique hedgehog-like spin textures at low energies, which directly demonstrate the mechanics of TR symmetry breaking on the surface. We further show that an insulating gap induced by quantum tunnelling between surfaces exhibits spin texture modulation at low energies but respects TR invariance. These spin phenomena and the control of their Fermi surface geometrical phase first demonstrated in our experiments pave the way for the future realization of many predicted exotic magnetic phenomena of topological origin.
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Submitted 13 December, 2012;
originally announced December 2012.
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Magnetically induced spin reorientation on the surface of a topological insulator (a surface magnetic topological insulator MBE film)
Authors:
Su-Yang Xu,
M. Neupane,
Chang Liu,
D. Zhang,
A. Richardella,
L. A. Wray,
N. Alidoust,
M. Leandersson,
T. Balasubramanian,
J. Sánchez-Barriga,
O. Rader,
G. Landolt,
B. Slomski,
J. H. Dil,
T. -R. Chang,
J. Osterwalder,
H. -T. Jeng,
Hsin Lin,
A. Bansil,
Nitin Samarth,
M. Zahid Hasan
Abstract:
The surface of topological insulators is proposed as a promising platform for spintronics and quantum information applications. In particular, when time- reversal symmetry is broken, topological surface states are expected to exhibit a wide range of exotic spin phenomena for potential implementation in electronics. Such devices need to be fabricated using nanoscale artificial thin films. It is of…
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The surface of topological insulators is proposed as a promising platform for spintronics and quantum information applications. In particular, when time- reversal symmetry is broken, topological surface states are expected to exhibit a wide range of exotic spin phenomena for potential implementation in electronics. Such devices need to be fabricated using nanoscale artificial thin films. It is of critical importance to study the spin behavior of artificial topological MBE thin films associated with magnetic dopants, and with regards to quantum size effects related to surface-to-surface tunneling as well as experimentally isolate time-reversal breaking from non-intrinsic surface electronic gaps. Here we present observation of the first (and thorough) study of magnetically induced spin reorientation phenomena on the surface of a topological insulator. Our results reveal dramatic rearrangements of the spin configuration upon magnetic doping contrasted with chemically similar nonmagnetic doping as well as with quantum tunneling phenomena in ultra-thin high quality MBE films. While we observe that the spin rearrangement induced by quantum tunneling occurs in a time-reversal invariant fashion, we present critical and systematic observation of an out-of-plane spin texture evolution correlated with magnetic interactions, which breaks time-reversal symmetry, demonstrating microscopic TRB at a Kramers' point on the surface.
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Submitted 13 December, 2012; v1 submitted 10 June, 2012;
originally announced June 2012.
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Probing two topological surface bands of Sb2Te3 by spin-polarized photoemission spectroscopy
Authors:
C. Pauly,
G. Bihlmayer,
M. Liebmann,
M. Grob,
A. Georgi,
D. Subramaniam,
M. R. Scholz,
J. Sánchez-Barriga,
A. Varykhalov,
S. Blügel,
O. Rader,
M. Morgenstern
Abstract:
Using high resolution spin- and angle-resolved photoemission spectroscopy, we map the electronic structure and spin texture of the surface states of the topological insulator Sb2Te3. In combination with density functional calculations (DFT), we directly show that Sb2Te3 exhibits a partially occupied, single spin-Dirac cone around the Fermi energy, which is topologically protected. DFT obtains a sp…
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Using high resolution spin- and angle-resolved photoemission spectroscopy, we map the electronic structure and spin texture of the surface states of the topological insulator Sb2Te3. In combination with density functional calculations (DFT), we directly show that Sb2Te3 exhibits a partially occupied, single spin-Dirac cone around the Fermi energy, which is topologically protected. DFT obtains a spin polarization of the occupied Dirac cone states of 80-90%, which is in reasonable agreement with the experimental data after careful background subtraction. Furthermore, we observe a strongly spin-orbit split surface band at lower energy. This state is found at 0.8eV below the Fermi level at the gamma-point, disperses upwards, and disappears at about 0.4eV below the Fermi level into two different bulk bands. Along the gamma-K direction, the band is located within a spin-orbit gap. According to an argument given by Pendry and Gurman in 1975, such a gap must contain a surface state, if it is located away from the high symmetry points of the Brillouin zone. Thus, the novel spin-split state is protected by symmetry, too.
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Submitted 30 October, 2012; v1 submitted 20 January, 2012;
originally announced January 2012.
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High spin polarization and circular dichroism of topological surface states on Bi2Te3
Authors:
M. R. Scholz,
J. Sánchez-Barriga,
D. Marchenko,
A. Varykhalov,
A. Volykhov,
L. V. Yashina,
O. Rader
Abstract:
Topological insulators have been successfully identified by spin-resolved photoemission but the spin polarization remained low (~20%). We show for Bi2Te3 that the in-gap surface state is much closer to full spin polarization with measured values reaching 80% at the Fermi level. When hybridizing with the bulk it remains highly spin polarized which may explain recent unusual quantum interference res…
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Topological insulators have been successfully identified by spin-resolved photoemission but the spin polarization remained low (~20%). We show for Bi2Te3 that the in-gap surface state is much closer to full spin polarization with measured values reaching 80% at the Fermi level. When hybridizing with the bulk it remains highly spin polarized which may explain recent unusual quantum interference results on Bi2Se3. The topological surface state shows a large circular dichroism in the photoelectron angle distribution with an asymmetry of ~20% the sign of which corresponds to that of the measured spin.
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Submitted 25 May, 2012; v1 submitted 4 August, 2011;
originally announced August 2011.
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Tolerance of topological surface states towards magnetic moments: Fe on Bi2Te3 and Bi2Se3
Authors:
M. R. Scholz,
J. Sánchez-Barriga,
D. Marchenko,
A. Varykhalov,
A. Volykhov,
L. V. Yashina,
O. Rader
Abstract:
Topological insulators(1-8) are a novel form of matter which features metallic surface states with quasirelativistic dispersion similar to graphene(9). Unlike graphene, the locking of spin and momentum and the protection by time-reversal symmetry(1-8) open up tremendous additional possibilities for external control of transport properties(10-18). Here we show by angle-resolved photoelectron spectr…
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Topological insulators(1-8) are a novel form of matter which features metallic surface states with quasirelativistic dispersion similar to graphene(9). Unlike graphene, the locking of spin and momentum and the protection by time-reversal symmetry(1-8) open up tremendous additional possibilities for external control of transport properties(10-18). Here we show by angle-resolved photoelectron spectroscopy that the topological sur-face states of Bi2Te3 and Bi2Se3 are stable against the deposition of Fe without opening a band gap. This stability extends to low submonolayer coverages meaning that the band gap reported recently(19) for Fe on Bi2Se3 is incorrect as well as to complete monolayers meaning that topological surface states can very well exist at interfaces with ferromagnets in future devices.
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Submitted 4 August, 2011;
originally announced August 2011.
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Quantitative determination of spin-dependent quasiparticle lifetimes and electronic correlations in hcp cobalt
Authors:
J. Sanchez-Barriga,
J. Minar,
J. Braun,
A. Varykhalov,
V. Boni,
I. Di Marco,
O. Rader,
V. Bellini,
F. Manghi,
H. Ebert,
M. I. Katsnelson,
A. I. Lichtenstein,
O. Eriksson,
W. Eberhardt,
H. A. Duerr,
J. Fink
Abstract:
We report on a quantitative investigation of the spin-dependent quasiparticle lifetimes and electron correlation effects in ferromagnetic hcp Co(0001) by means of spin and angle-resolved photoemission spectroscopy. The experimental spectra are compared in detail to state-of-the-art many-body calculations within the dynamical mean field theory and the three-body scattering approximation, including…
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We report on a quantitative investigation of the spin-dependent quasiparticle lifetimes and electron correlation effects in ferromagnetic hcp Co(0001) by means of spin and angle-resolved photoemission spectroscopy. The experimental spectra are compared in detail to state-of-the-art many-body calculations within the dynamical mean field theory and the three-body scattering approximation, including a full calculation of the one-step photoemission process. From this comparison we conclude that although strong local many-body Coulomb interactions are of major importance for the qualitative description of correlation effects in Co, more sophisticated many-body calculations are needed in order to improve the quantitative agreement between theory and experiment, in particular concerning the linewidths. The quality of the overall agreement obtained for Co indicates that the effect of non-local correlations becomes weaker with increasing atomic number.
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Submitted 19 August, 2010;
originally announced August 2010.
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About the strength of correlation effects in the electronic structure of iron
Authors:
J. Sanchez-Barriga,
J. Fink,
V. Boni,
I. Di Marco,
J. Braun,
J. Minar,
A. Varykhalov,
O. Rader,
V. Bellini,
F. Manghi,
H. Ebert,
M. I. Katsnelson,
A. I. Lichtenstein,
O. Eriksson,
W. Eberhardt,
H. A. Duerr
Abstract:
The strength of electronic correlation effects in the spin-dependent electronic structure of ferromagnetic bcc Fe(110) has been investigated by means of spin and angle-resolved photoemission spectroscopy. The experimental results are compared to theoretical calculations within the three-body scattering approximation and within the dynamical mean-field theory, together with one-step model calcula…
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The strength of electronic correlation effects in the spin-dependent electronic structure of ferromagnetic bcc Fe(110) has been investigated by means of spin and angle-resolved photoemission spectroscopy. The experimental results are compared to theoretical calculations within the three-body scattering approximation and within the dynamical mean-field theory, together with one-step model calculations of the photoemission process. This comparison indicates that the present state of the art many-body calculations, although improving the description of correlation effects in Fe, give too small mass renormalizations and scattering rates thus demanding more refined many-body theories including non-local fluctuations.
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Submitted 22 October, 2009;
originally announced October 2009.
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Interplay between the magnetic anisotropy contributions of Cobalt nanowires
Authors:
J. Sanchez-Barriga,
M. Lucas,
F. Radu,
E. Martin,
M. Multigner,
P. Marin,
A. Hernando,
G. Rivero
Abstract:
We report on the magnetic properties and the crystallographic structure of the cobalt nanowire arrays as a function of their nanoscale dimensions. X-ray diffraction measurements show the appearance of an in-plane HCP-Co phase for nanowires with 50 nm diameter, suggesting a partial reorientation of the magnetocrystalline anisotropy axis along the membrane plane with increasing pore diameter. No s…
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We report on the magnetic properties and the crystallographic structure of the cobalt nanowire arrays as a function of their nanoscale dimensions. X-ray diffraction measurements show the appearance of an in-plane HCP-Co phase for nanowires with 50 nm diameter, suggesting a partial reorientation of the magnetocrystalline anisotropy axis along the membrane plane with increasing pore diameter. No significant changes in the magnetic behavior of the nanowire system are observed with decreasing temperature, indicating that the effective magnetoelastic anisotropy does not play a dominant role in the remagnetization processes of individual nanowires. An enhancement of the total magnetic anisotropy is found at room temperature with a decreasing nanowire diameter-to-length ratio (d/L), a result that is quantitatively analyzed on the basis of a simplified shape anisotropy model.
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Submitted 22 October, 2009;
originally announced October 2009.