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Uniaxial strain effects on the Fermi surface and quantum mobility of the Dirac nodal-line semimetal ZrSiS
Authors:
J. P. Lorenz,
J. F. Linnartz,
A. Kool,
M. R. van Delft,
W. Guo,
I. Aguilera,
R. Singha,
L. M. Schoop,
N. E. Hussey,
S. Wiedmann,
A. de Visser
Abstract:
ZrSiS has been identified as an exemplary Dirac nodal-line semimetal, in which the Dirac band crossings extend along a closed loop in momentum space. Recently, the topology of the Fermi surface of ZrSiS was uncovered in great detail by quantum oscillation studies. For a magnetic field along the tetragonal $c$ axis, a rich frequency spectrum was observed stemming from the principal electron and hol…
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ZrSiS has been identified as an exemplary Dirac nodal-line semimetal, in which the Dirac band crossings extend along a closed loop in momentum space. Recently, the topology of the Fermi surface of ZrSiS was uncovered in great detail by quantum oscillation studies. For a magnetic field along the tetragonal $c$ axis, a rich frequency spectrum was observed stemming from the principal electron and hole pockets, and multiple magnetic breakdown orbits. In this work we use uniaxial strain as a tuning parameter for the Fermi surface and the low energy excitations. We measure the magnetoresistance of a single crystal under tensile (up to 0.34 %) and compressive (up to -0.28 %) strain exerted along the $a$ axis and in magnetic fields up to 30 T. We observe a systematic weakening of the peak structure in the Shubnikov-de Haas frequency spectrum upon changing from compressive to tensile strain. This effect may be explained by a decrease in the effective quantum mobility upon decreasing the $c/a$ ratio, which is corroborated by a concurrent increase in the Dingle temperature.
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Submitted 22 May, 2024;
originally announced May 2024.
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Electronic band structure of Sb2Te3
Authors:
I. Mohelsky,
J. Wyzula,
F. Le Mardele,
F. Abadizaman,
O. Caha,
A. Dubroka,
X. D. Sun,
C. W. Cho,
B. A. Piot,
M. F. Tanzim,
I. Aguilera,
G. Bauer,
G. Springholz,
M. Orlita
Abstract:
Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the Γpoint, or along the trigonal axis, and its width reaches Eg = 190 meV at low temperatures. Our data a…
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Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the Γpoint, or along the trigonal axis, and its width reaches Eg = 190 meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method.
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Submitted 15 March, 2024; v1 submitted 12 December, 2023;
originally announced December 2023.
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Bulk and surface electronic structure of Bi$_4$Te$_3$ from $GW$ calculations and photoemission experiments
Authors:
Dmitrii Nabok,
Murat Tas,
Shotaro Kusaka,
Engin Durgun,
Christoph Friedrich,
Gustav Bihlmayer,
Stefan Blügel,
Toru Hirahara,
Irene Aguilera
Abstract:
We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi$_4$Te$_3$, a natural superlattice of alternating Bi$_2$Te$_3$ quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi$_2$Te$_3$ and Bi$_1$Te$_1$, density functional theory predicts Bi$_4$Te$_3$ to be a semimetal. In this work, we compute the quasiparticle elect…
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We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi$_4$Te$_3$, a natural superlattice of alternating Bi$_2$Te$_3$ quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi$_2$Te$_3$ and Bi$_1$Te$_1$, density functional theory predicts Bi$_4$Te$_3$ to be a semimetal. In this work, we compute the quasiparticle electronic structure of Bi$_4$Te$_3$ in the framework of the $GW$ approximation within many-body perturbation theory. The quasiparticle corrections are found to modify the dispersion of the valence and conduction bands in the vicinity of the Fermi energy, leading to the opening of a small indirect band gap. Based on the analysis of the eigenstates, Bi$_4$Te$_3$ is classified as a dual topological insulator with bulk topological invariants $\mathbb{Z}_2$ (1;111) and magnetic mirror Chern number $n_M=1$. The bulk $GW$ results are used to build a Wannier-functions based tight-binding Hamiltonian that is further applied to study the electronic properties of the (111) surface. The comparison with our angle-resolved photoemission measurements shows excellent agreement between the computed and measured surface states and indicates the dual topological nature of Bi$_4$Te$_3$.
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Submitted 19 April, 2022;
originally announced April 2022.
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Is there a polaron signature in angle-resolved photoemission of CsPbBr3?
Authors:
Maryam Sajedi,
Maxim Krivenkov,
Dmitry Marchenko,
Jaime Sánchez-Barriga,
Anoop K. Chandran,
Andrei Varykhalov,
Emile D. L. Rienks,
Irene Aguilera,
Stefan Blügel,
Oliver Rader
Abstract:
The formation of large polarons has been proposed as reason for the high defect tolerance, low mobility, low charge carrier trapping and low nonradiative recombination rates of lead halide perovskites. Recently, direct evidence for large-polaron formation has been reported from a 50% effective mass enhancement in angle-resolved photoemission of CsPbBr3 over theory for the orthorhombic structure. W…
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The formation of large polarons has been proposed as reason for the high defect tolerance, low mobility, low charge carrier trapping and low nonradiative recombination rates of lead halide perovskites. Recently, direct evidence for large-polaron formation has been reported from a 50% effective mass enhancement in angle-resolved photoemission of CsPbBr3 over theory for the orthorhombic structure. We present in-depth band dispersion measurements of CsPbBr3 and GW calculations which lead to almost identical effective masses at the valence band maximum of 0.203+/-0.016 m0 in experiment and 0.226 m0 in orthorhombic theory. We argue that the effective mass can be explained solely on the basis of electron-electron correlation and large-polaron formation cannot be concluded from photoemission data.
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Submitted 28 June, 2022; v1 submitted 28 March, 2022;
originally announced March 2022.
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Effect of doping, photodoping and bandgap variation on the performance of perovskite solar cells
Authors:
Basita Das,
Irene Aguilera,
Uwe Rau,
Thomas Kirchartz
Abstract:
Most traditional semiconductor materials are based on the control of doping densities to create junctions and thereby functional and efficient electronic and optoelectronic devices. The technology development for halide perovskites had initially only rarely made use of the concept of electronic doping of the perovskite layer and instead employed a variety of different contact materials to create f…
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Most traditional semiconductor materials are based on the control of doping densities to create junctions and thereby functional and efficient electronic and optoelectronic devices. The technology development for halide perovskites had initially only rarely made use of the concept of electronic doping of the perovskite layer and instead employed a variety of different contact materials to create functionality. Only recently, intentional, or unintentional doping of the perovskite layer is more frequently invoked as an important factor explaining differences in photovoltaic or optoelectronic performance in certain devices. Here we use numerical simulations to study the influence of doping and photodoping on photoluminescence quantum yield as well as other device relevant metrics. We find that doping can improve the photoluminescence quantum yield by making radiative recombination faster. This effect can benefit or harm photovoltaic performance given that the improvement of photoluminescence quantum efficiency and open-circuit voltage is accompanied by a reduction of the diffusion length. This reduction will eventually lead to inefficient carrier collection at high doping densities. The photovoltaic performance might improve at an optimum doping density which depends on a range of factors such as the mobilities of the different layers and the ratio of the capture cross sections for electrons and holes.
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Submitted 6 December, 2021;
originally announced December 2021.
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$Z_2$ topology of bismuth
Authors:
Irene Aguilera,
Hyun-Jung Kim,
Christoph Friedrich,
Gustav Bihlmayer,
Stefan Blügel
Abstract:
While first-principles calculations with different levels of sophistication predict a topologically trivial $Z_2$ state for bulk bismuth, some photoemission experiments show surface states consistent with the interpretation of bismuth being in a topologically non-trivial $Z_2$ state. We resolve this contradiction between theory and experiment by showing, based on quasiparticle self-consistent…
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While first-principles calculations with different levels of sophistication predict a topologically trivial $Z_2$ state for bulk bismuth, some photoemission experiments show surface states consistent with the interpretation of bismuth being in a topologically non-trivial $Z_2$ state. We resolve this contradiction between theory and experiment by showing, based on quasiparticle self-consistent $GW$ calculations, that the experimental surface states interpreted as supporting a non-trivial phase are actually consistent with a trivial $Z_2$ invariant. We identify this contradiction as the result of a crosstalk effect arising from the extreme penetration depth of the surface states into the bulk of Bi. A film of Bi can be considered bulk-like only for thicknesses of about 1000 bilayers ($\approx$ 400 nm) and more.
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Submitted 28 August, 2021;
originally announced August 2021.
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Orbital contributions in the element-resolved valence electronic structure of Bi2Se3
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Jean-Pascal Rueff,
Zhesheng Chen,
Irene Aguilera,
Gustav Bihlmayer,
Lukasz Plucinski,
Ismael L. Graff,
Giuseppina Conti,
Ivan A. Vartanyants,
Claus M. Schneider,
Charles S. Fadley
Abstract:
In this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing wave-excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Compariso…
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In this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing wave-excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density functional theory (DFT) calculations (LDA and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi2Se3 HAXPES valence band. These findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.
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Submitted 7 December, 2021; v1 submitted 3 August, 2021;
originally announced August 2021.
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Anomaly Detection in Predictive Maintenance: A New Evaluation Framework for Temporal Unsupervised Anomaly Detection Algorithms
Authors:
Jacinto Carrasco,
Irina Markova,
David López,
Ignacio Aguilera,
Diego García,
Marta García-Barzana,
Manuel Arias-Rodil,
Julián Luengo,
Francisco Herrera
Abstract:
The research in anomaly detection lacks a unified definition of what represents an anomalous instance. Discrepancies in the nature itself of an anomaly lead to multiple paradigms of algorithms design and experimentation. Predictive maintenance is a special case, where the anomaly represents a failure that must be prevented. Related time-series research as outlier and novelty detection or time-seri…
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The research in anomaly detection lacks a unified definition of what represents an anomalous instance. Discrepancies in the nature itself of an anomaly lead to multiple paradigms of algorithms design and experimentation. Predictive maintenance is a special case, where the anomaly represents a failure that must be prevented. Related time-series research as outlier and novelty detection or time-series classification does not apply to the concept of an anomaly in this field, because they are not single points which have not been seen previously and may not be precisely annotated. Moreover, due to the lack of annotated anomalous data, many benchmarks are adapted from supervised scenarios.
To address these issues, we generalise the concept of positive and negative instances to intervals to be able to evaluate unsupervised anomaly detection algorithms. We also preserve the imbalance scheme for evaluation through the proposal of the Preceding Window ROC, a generalisation for the calculation of ROC curves for time-series scenarios. We also adapt the mechanism from a established time-series anomaly detection benchmark to the proposed generalisations to reward early detection. Therefore, the proposal represents a flexible evaluation framework for the different scenarios. To show the usefulness of this definition, we include a case study of Big Data algorithms with a real-world time-series problem provided by the company ArcelorMittal, and compare the proposal with an evaluation method.
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Submitted 2 September, 2021; v1 submitted 26 May, 2021;
originally announced May 2021.
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"What is on your mind?" Automated Scoring of Mindreading in Childhood and Early Adolescence
Authors:
Venelin Kovatchev,
Phillip Smith,
Mark Lee,
Imogen Grumley Traynor,
Irene Luque Aguilera,
Rory T. Devine
Abstract:
In this paper we present the first work on the automated scoring of mindreading ability in middle childhood and early adolescence. We create MIND-CA, a new corpus of 11,311 question-answer pairs in English from 1,066 children aged 7 to 14. We perform machine learning experiments and carry out extensive quantitative and qualitative evaluation. We obtain promising results, demonstrating the applicab…
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In this paper we present the first work on the automated scoring of mindreading ability in middle childhood and early adolescence. We create MIND-CA, a new corpus of 11,311 question-answer pairs in English from 1,066 children aged 7 to 14. We perform machine learning experiments and carry out extensive quantitative and qualitative evaluation. We obtain promising results, demonstrating the applicability of state-of-the-art NLP solutions to a new domain and task.
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Submitted 16 November, 2020;
originally announced November 2020.
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Defect tolerant device geometries
Authors:
Basita Das,
Zhifa Liu,
Irene Aguilera,
Uwe Rau,
Thomas Kirchartz
Abstract:
The term defect tolerance is widely used in literature to describe materials such as lead-halides which exhibit long non-radiative lifetimes of carriers despite possessing a large concentration of point defects. Studies on defect tolerance of materials mostly look at the properties of the host material and/or the chemical nature of defects that affect the capture coefficients of defects. However,…
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The term defect tolerance is widely used in literature to describe materials such as lead-halides which exhibit long non-radiative lifetimes of carriers despite possessing a large concentration of point defects. Studies on defect tolerance of materials mostly look at the properties of the host material and/or the chemical nature of defects that affect the capture coefficients of defects. However, the recombination activity of a defect is not only a function of its capture coefficients alone but are also dependent on the electrostatics and the design of the layer stack of a photovoltaic device. Here we study the influence of device geometry on defect tolerance by combining calculations of capture coefficients with device simulations. We derive generic device design principles which can inhibit recombination inside a photovoltaic device for a given set of capture coefficients based on the idea of slowing down the slower of the two processes (electron and hole capture) even further by modifying electron and hole injection into the absorber layer. We use the material parameters and typical p-i-n device geometry representing methylammonium lead halide perovskites solar cells to illustrate the application of our generic design principles to improve specific devices .
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Submitted 31 August, 2020;
originally announced August 2020.
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Kink far below the Fermi level reveals new electron-magnon scattering channel in Fe
Authors:
E. Młyńczak,
M. C. T. D. Müller,
P. Gospodarič,
T. Heider,
I. Aguilera,
G. Bihlmayer,
M. Gehlmann,
M. Jugovac,
G. Zamborlini,
C. Tusche,
S. Suga,
V. Feyer,
L. Plucinski,
C. Friedrich,
S. Blügel,
C. M. Schneider
Abstract:
Many properties of real materials can be modeled using ab initio methods within a single-particle picture. However, for an accurate theoretical treatment of excited states, it is necessary to describe electron-electron correlations including interactions with bosons: phonons, plasmons, or magnons. In this work, by comparing spin- and momentum-resolved photoemission spectroscopy measurements to man…
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Many properties of real materials can be modeled using ab initio methods within a single-particle picture. However, for an accurate theoretical treatment of excited states, it is necessary to describe electron-electron correlations including interactions with bosons: phonons, plasmons, or magnons. In this work, by comparing spin- and momentum-resolved photoemission spectroscopy measurements to many-body calculations carried out with a newly developed first-principles method, we show that a kink in the electronic band dispersion of a ferromagnetic material can occur at much deeper binding energies than expected (E_b=1.5 eV). We demonstrate that the observed spectral signature reflects the formation of a many-body state that includes a photohole bound to a coherent superposition of renormalized spin-flip excitations. The existence of such a many-body state sheds new light on the physics of the electron-magnon interaction which is essential in fields such as spintronics and Fe-based superconductivity.
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Submitted 13 May, 2019; v1 submitted 8 August, 2018;
originally announced August 2018.
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Anomalous behavior of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ across the quantum-phase transition from topological to trivial insulator
Authors:
J. Sánchez-Barriga,
I. Aguilera,
L. V. Yashina,
D. Y. Tsukanova,
F. Freyse,
A. N. Chaika,
A. M. Abakumov,
A. Varykhalov,
E. D. L. Rienks,
G. Bihlmayer,
S. Blügel,
O. Rader
Abstract:
Using spin- and angle-resolved spectroscopy and relativistic many-body calculations, we investigate the evolution of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ bulk single crystals around the critical point of the trivial to topological insulator quantum-phase transition. By increasing $x$, we observe how a surface gap opens at the Dirac point of the initially gapless topological sur…
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Using spin- and angle-resolved spectroscopy and relativistic many-body calculations, we investigate the evolution of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ bulk single crystals around the critical point of the trivial to topological insulator quantum-phase transition. By increasing $x$, we observe how a surface gap opens at the Dirac point of the initially gapless topological surface state of Bi$_2$Se$_3$, leading to the existence of massive fermions. The surface gap monotonically increases for a wide range of $x$ values across the topological and trivial sides of the quantum-phase transition. By means of photon-energy dependent measurements, we demonstrate that the gapped surface state survives the inversion of the bulk bands which occurs at a critical point near $x=0.055$. The surface state exhibits a non-zero in-plane spin polarization which decays exponentially with increasing $x$, and that persists on both the topological and trivial insulator phases. Its out-of-plane spin polarization remains zero demonstrating the absence of a hedgehog spin texture expected from broken time-reversal symmetry. Our calculations reveal qualitative agreement with the experimental results all across the quantum-phase transition upon the systematic variation of the spin-orbit coupling strength. A non-time reversal symmetry breaking mechanism of bulk-mediated scattering processes that increase with decreasing spin-orbit coupling strength is proposed as explanation.
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Submitted 3 July, 2018;
originally announced July 2018.
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Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators
Authors:
H. Plank,
J. Pernul,
S. Gebert,
S. N. Danilov,
J. König-Otto,
S. Winnerl,
M. Lanius,
J. Kampmeier,
G. Mussler,
I. Aguilera,
D. Grützmacher,
S. D. Ganichev
Abstract:
We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies th…
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We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies the LPGE emerges due to free carrier Drude-like absorption. The spectra allow to determine the room temperature carrier mobilities in the surface states despite the presents of thermally activate residual impurities in the material bulk. In a number of samples we observed an enhancement of the linear photogalvanic effect at frequencies between 30÷60 THz, which is attributed to the excitation of electrons from helical surface to bulk conduction band states. Under this condition and applying oblique incidence we also observed the circular photogalvanic effect driven by the radiation helicity.
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Submitted 30 November, 2017;
originally announced November 2017.
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Direct observation of the band gap transition in atomically thin ReS$_2$
Authors:
Mathias Gehlmann,
Irene Aguilera,
Gustav Bihlmayer,
Slavomír Nemšák,
Philipp Nagler,
Pika Gospodarič,
Giovanni Zamborlini,
Markus Eschbach,
Vitaliy Feyer,
Florian Kronast,
Ewa Młyńczak,
Tobias Korn,
Lukasz Plucinski,
Christian Schüller,
Stefan Blügel,
Claus M. Schneider
Abstract:
ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic…
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ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS$_2$ using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS$_2$ are - contrary to assumptions in recent literature - significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing a significantly increased effective electron mass in single-layer crystals. We also find that only bilayer ReS$_2$ has a direct band gap. Our results establish bilayer ReS$_2$ as a advantageous building block for two-dimensional devices and van der Waals heterostructures.
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Submitted 14 February, 2017;
originally announced February 2017.
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Surface Fermi arc connectivity in the type-II Weyl semimetal candidate WTe$_{2}$
Authors:
J. Sánchez-Barriga,
M. G. Vergniory,
D. Evtushinsky,
I. Aguilera,
A. Varykhalov,
S. Blügel,
O. Rader
Abstract:
We perform ultrahigh resolution angle-resolved photoemission experiments at a temperature T=0.8 K on the type-II Weyl semimetal candidate WTe$_{2}$. We find a surface Fermi arc connecting the bulk electron and hole pockets on the (001) surface. Our results show that the surface Fermi arc connectivity to the bulk bands is strongly mediated by distinct surface resonances dispersing near the border o…
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We perform ultrahigh resolution angle-resolved photoemission experiments at a temperature T=0.8 K on the type-II Weyl semimetal candidate WTe$_{2}$. We find a surface Fermi arc connecting the bulk electron and hole pockets on the (001) surface. Our results show that the surface Fermi arc connectivity to the bulk bands is strongly mediated by distinct surface resonances dispersing near the border of the surface-projected bulk band gap. By comparing the experimental results to first-principles calculations we argue that the coupling to these surface resonances, which are topologically trivial, is compatible with the classification of WTe$_{2}$ as a type-II Weyl semimetal hosting topological Fermi arcs. We further support our conclusion by a systematic characterization of the bulk and surface character of the different bands and discuss the similarity of our findings to the case of topological insulators.
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Submitted 19 August, 2016;
originally announced August 2016.
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Fermi surface manipulation by external magnetic field demonstrated for a prototypical ferromagnet
Authors:
E. Młyńczak,
M. Eschbach,
S. Borek,
J. Minár,
J. Braun,
I. Aguilera,
G. Bihlmayer,
S. Döring,
M. Gehlmann,
P. Gospodarič,
S. Suga,
L. Plucinski,
S. Blügel,
H. Ebert,
C. M. Schneider
Abstract:
We consider the details of the near-surface electronic band structure of a prototypical ferromagnet, Fe(001). Using high resolution angle-resolved photoemission spectroscopy we demonstrate openings of the spin-orbit induced electronic band gaps near the Fermi level. The band gaps and thus the Fermi surface can be manipulated by changing the remanent magnetization direction. The effect is of the or…
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We consider the details of the near-surface electronic band structure of a prototypical ferromagnet, Fe(001). Using high resolution angle-resolved photoemission spectroscopy we demonstrate openings of the spin-orbit induced electronic band gaps near the Fermi level. The band gaps and thus the Fermi surface can be manipulated by changing the remanent magnetization direction. The effect is of the order of $Δ$E = 100 meV and $Δ\text {k} = 0.1\,\textÅ^{-1}$. We show that the observed dispersions are dominated by the bulk band structure. First-principles calculations and one-step photoemission calculations suggest that the effect is related to changes in the electronic ground state, rather than caused by the photoemission process itself. The symmetry of the effect indicates that the observed electronic bulk states are influenced by the presence of the surface, which might be understood as related to a Rashba-type effect. By pinpointing the regions in the electronic band structure where the switchable band gaps occur, we demonstrate the significance of spin-orbit interaction even for elements as light as 3d ferromagnets.
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Submitted 24 June, 2016;
originally announced June 2016.
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Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_2$ bulk crystals
Authors:
Mathias Gehlmann,
Gustav Bihlmayer,
Irene Aguilera,
Ewa Mlynczak,
Markus Eschbach,
Sven Döring,
Pika Gospodaric,
Stefan Cramm,
Beata Kardynal,
Lukasz Plucinski,
Stefan Blügel,
Claus M. Schneider
Abstract:
Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS…
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Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS$_2$ bulk crystals. Using spin- and angle-resolved photoemission spectroscopy (ARPES) we directly observed a spin-polarization of more than 65% for distinct valleys in the electronic band structure. By additionally evaluating the probing depth of our method we find that these valence band states at the $\overline{\text{K}}$ point in the Brillouin zone are close to fully polarized for the individual atomic trilayers of MoS$_2$, which is confirmed by our density functional theory calculations. Furthermore, we show that this spin-layer locking leads to the observation of highly spin-polarized bands in ARPES since these states are almost completely confined within two dimensions. Our findings prove that these highly desired properties of MoS$_2$ can be accessed without thinning it down to the monolayer limit.
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Submitted 13 October, 2015;
originally announced October 2015.
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Electronic phase transitions of bismuth under strain from relativistic self-consistent GW calculations
Authors:
Irene Aguilera,
Christoph Friedrich,
Stefan Blügel
Abstract:
We present quasiparticle self-consistent GW (QSGW) calculations of semimetallic bulk Bi. We go beyond the conventional QSGW method by including the spin-orbit coupling throughout the self-consistency cycle. This approach improves the description of the electron and the hole pockets considerably with respect to standard density functional theory (DFT), leading to excellent agreement with experiment…
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We present quasiparticle self-consistent GW (QSGW) calculations of semimetallic bulk Bi. We go beyond the conventional QSGW method by including the spin-orbit coupling throughout the self-consistency cycle. This approach improves the description of the electron and the hole pockets considerably with respect to standard density functional theory (DFT), leading to excellent agreement with experiment. We employ this relativistic QSGW approach to conduct a study of the semimetal-to-semiconductor and the trivial-to-topological transitions that Bi experiences under strain. DFT predicts that an unphysically large strain is needed for such transitions. We show, by means of the relativistic QSGW description of the electronic structure, that an in-plane tensile strain of only 0.3% and a compressive strain of 0.4% are sufficient to cause the semimetal-to-semiconductor and the trivial-to-topological phase transitions, respectively. Thus, the required strain moves into a regime that is likely to be realizable in experiment, which opens up the possibility to explore bulklike topological behavior of pure Bi.
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Submitted 26 March, 2015; v1 submitted 13 March, 2015;
originally announced March 2015.
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Bulk Band Structure of Bi$_2$Te$_3$
Authors:
Matteo Michiardi,
Irene Aguilera,
Marco Bianchi,
Vagner Eustáquio de Carvalho,
Luiz Orlando Ladeira,
Nayara Gomes Teixeira,
Edmar Avellar Soares,
Chiristoph Friedrich,
Stefan Blügel,
Philip Hofmann
Abstract:
The bulk band structure of Bi$_2$Te$_3$ has been determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations. We have performed calculations using the local density approximation (LDA) of density functional theory and the one-shot $GW$ approximation within the all-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into…
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The bulk band structure of Bi$_2$Te$_3$ has been determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations. We have performed calculations using the local density approximation (LDA) of density functional theory and the one-shot $GW$ approximation within the all-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of \bite~when compared to LDA. Experimental and calculated results are compared in the spectral regions where distinct differences between the LDA and $GW$ results are present. Overall a superior agreement with $GW$ is found, highlighting the importance of many-body effects in the band structure of this family of topological insulators.
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Submitted 12 March, 2014;
originally announced March 2014.
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Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment
Authors:
I. A. Nechaev,
R. C. Hatch,
M. Bianchi,
D. Guan,
C. Friedrich,
I. Aguilera,
J. L. Mi,
B. B. Iversen,
S. Blügel,
Ph. Hofmann,
E. V. Chulkov
Abstract:
Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at…
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Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at the Brillouin center only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center.
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Submitted 19 March, 2013; v1 submitted 16 October, 2012;
originally announced October 2012.
