Showing 1–50 of 76 results for author: Grützmacher, D

Low-energy modeling of three-dimensional topological insulator nanostructures

Authors: Eduárd Zsurka, Cheng Wang, Julian Legendre, Daniele Di Miceli, Llorenç Serra, Detlev Grützmacher, Thomas L. Schmidt, Philipp Rüßmann, Kristof Moors

Abstract: We develop an accurate nanoelectronic modeling approach for realistic three-dimensional topological insulator nanostructures and investigate their low-energy surface-state spectrum. Starting from the commonly considered four-band $\boldsymbol{\mathrm{k\cdot p}}$ bulk model Hamiltonian for the Bi$_2$Se$_3$ family of topological insulators, we derive new parameter sets for Bi$_2$Se$_3$, Bi$_2$Te… ▽ More We develop an accurate nanoelectronic modeling approach for realistic three-dimensional topological insulator nanostructures and investigate their low-energy surface-state spectrum. Starting from the commonly considered four-band $\boldsymbol{\mathrm{k\cdot p}}$ bulk model Hamiltonian for the Bi$_2$Se$_3$ family of topological insulators, we derive new parameter sets for Bi$_2$Se$_3$, Bi$_2$Te$_3$ and Sb$_2$Te$_3$. We consider a fitting strategy applied to \emph{ab initio} band structures around the $Γ$ point that ensures a quantitatively accurate description of the low-energy bulk and surface states, while avoiding the appearance of unphysical low-energy states at higher momenta, something that is not guaranteed by the commonly considered perturbative approach. We analyze the effects that arise in the low-energy spectrum of topological surface states due to band anisotropy and electron-hole asymmetry, yielding Dirac surface states that naturally localize on different side facets. In the thin-film limit, when surface states hybridize through the bulk, we resort to a thin-film model and derive thickness-dependent model parameters from \emph{ab initio} calculations that show good agreement with experimentally resolved band structures, unlike the bulk model that neglects relevant many-body effects in this regime. Our versatile modeling approach offers a reliable starting point for accurate simulations of realistic topological material-based nanoelectronic devices. △ Less

Submitted 22 April, 2024; originally announced April 2024.

Topological insulator based axial superconducting quantum interferometer structures

Authors: Erik Zimmermann, Abdur Rehman Jalil, Michael Schleenvoigt, Jan Karthein, Benedikt Frohn, Gerrit Behner, Florian Lentz, Stefan Trellenkamp, Elmar Neumann, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillati… ▽ More Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillations are explained by interference effects of coherent transport through topological surface states surrounding the cross-section of the nanoribbon. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Comments: 7 pages, 4 figures, supplementary material

The temperature affects the impact levels of synthetic insecticides on a parasitoid wasp used in the biological control of pentatomid pests in soybean crops

Authors: Matheus Rakes, Maíra Chagas Morais, Leandro do Prado Ribeiro, Gabriel Rodrigues Palma, Rafael de Andrade Moral, Daniel Bernardi, Anderson Dionei Grützmacher

Abstract: The impact of climate change has led to growing global concern about the interaction of temperature and xenobiotics in agricultural toxicological studies. Thus, for the first time, we evaluated the lethal, sublethal and transgerational effects of six insecticides used in the management of stink bug complex in soybean crops on the different life stages of the parasitoid Telenomus podisi (Hymenopter… ▽ More The impact of climate change has led to growing global concern about the interaction of temperature and xenobiotics in agricultural toxicological studies. Thus, for the first time, we evaluated the lethal, sublethal and transgerational effects of six insecticides used in the management of stink bug complex in soybean crops on the different life stages of the parasitoid Telenomus podisi (Hymenoptera: Scelionidae) in three temperature levels (15, 25 and 30 °C). Telenomus podisi adults (F0 generation), when exposed to insecticides based on acephate, spinosad and thiamethoxam + lambda-cyhalothrin, showed accumulated mortality of 100% at all temperature levels tested. On the other hand, methoxyfenozide + spinetoram caused average mortalities of 88.75% at 15 °C and 38.75% at 25 and 30 °C. In contrast, the mortality rates caused by chlorfenapyr at 15, 25 and 30 °C were 1.25, 71.25 and 71.25%. On the other hand, surviving adults in lethal toxicity bioassay did not show differences in egg parasitism (F0 generation) and emergence of F1 generation in all temperature levels studied; however, the insecticide methoxyfenozide + spinetoram showed the lowest level of parasitism and emergence of T. podisi. In addition, our results demonstrated significant changes in the proportion of emerged males and females as the temperature increased; however, we did not find any differences when comparing the insecticides studied. Furthermore, we detected a significant interaction between insecticides and temperatures by contaminating the host's parasitized eggs (parasitoid pupal stage). Generally, the highest emergence reduction values were found at the highest temperature studied (30 °C). Our results highlighted the temperature-dependent impact of synthetic insecticides on parasitoids, which should be considered in toxicological risk assessments and under predicted climate change scenarios. △ Less

Submitted 8 March, 2024; originally announced March 2024.

Comments: 45 pages

Flux-periodic supercurrent oscillations in an Aharonov-Bohm-type nanowire Josephson junction

Authors: Patrick Zellekens, Russell S. Deacon, Farah Basaric, Raghavendra Juluri, Michael D. Randle, Benjamin Bennemann, Christoph Krause, Erik Zimmermann, Ana M. Sanchez, Detlev Grützmacher, Alexander Pawlis, Koji Ishibashi, Thomas Schäpers

Abstract: Phase winding effects in hollow semiconductor nanowires with superconducting shells have been proposed as a route to engineer topological superconducting states. We investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for such devices, where the thin InAs shell confines the electron wave function around the GaAs core. With normal contacts we ob… ▽ More Phase winding effects in hollow semiconductor nanowires with superconducting shells have been proposed as a route to engineer topological superconducting states. We investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for such devices, where the thin InAs shell confines the electron wave function around the GaAs core. With normal contacts we observed pronounced $h/e$ flux periodic oscillations in the magnetoconductance, indicating the presence of a tubular conductive channel in the InAs shell. Conversely, the switching current in Josephson junctions oscillates with approximately half that period, i.e. $h/2e$, indicating transport via Andreev transport processes in the junction enclosing threading magnetic flux. On these structures, we systematically studied the gate-, field-, and temperature-dependent evolution of the supercurrent. Results indicate that Andreev transport processes can occur about the wire circumference indicating full proximitization of the InAs shell from the half-shell superconducting contacts. △ Less

Submitted 21 February, 2024; originally announced February 2024.

Comments: 13 pages, 6 figures

Resonant Raman scattering of surface phonon polaritons mediated by excitons in WSe$_2$ films

Authors: L. Zhou, K. Wirth, M. N. Bui, R. Rani, D. Grützmacher, T. Taubner, B. E. Kardynał

Abstract: Surface phonon-polaritons propagating along interfaces of polar dielectrics coexist with excitons in many van der Waals heterostructures, so understanding their mutual interactions is of great interest. Here, we investigate the type I surface phonon polariton of hBN via low-temperature resonant-Raman spectroscopy in hBN/WSe2 heterostructures. The resonantly enhanced hBN surface phonon polariton (S… ▽ More Surface phonon-polaritons propagating along interfaces of polar dielectrics coexist with excitons in many van der Waals heterostructures, so understanding their mutual interactions is of great interest. Here, we investigate the type I surface phonon polariton of hBN via low-temperature resonant-Raman spectroscopy in hBN/WSe2 heterostructures. The resonantly enhanced hBN surface phonon polariton (SPhP) Raman signal, when laser energy is such that the scattered photons have energy close to that of the WSe2 excitons, enables detailed characterization of type I SPhP in hBN even when hBN is one monolayer thick. We find that the measured bandwidth of the SPhP Raman signal depends on the thicknesses of the hBN layer. We are able explain the experimental data using transfer matrix method simulations of SPhP dispersions providing that we assume the Raman scattering to be momentum non-conserving, as could be the case if localized WSe2 exciton states participated in the process. We further show that resonant Raman scattering from SiO2 SPhP can also be mediated by WSe$_2$. △ Less

Submitted 6 February, 2024; originally announced February 2024.

Comments: 23 pages, 11 figures

Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge$_{1-x}$Sn$_{x}$

Authors: Agnieszka Anna Corley-Wiciak, Diana Ryzhak, Marvin Hartwig Zoellner, Costanza Lucia Manganelli, Omar Concepción, Oliver Skibitzki, Detlev Grützmacher, Dan Buca, Giovanni Capellini, Davide Spirito

Abstract: Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layers that present mechanical deformation and anisotropic lattice expansion. In this work, a temperature-dependent Raman study in epitaxial Ge and Ge… ▽ More Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layers that present mechanical deformation and anisotropic lattice expansion. In this work, a temperature-dependent Raman study in epitaxial Ge and Ge$_{1-x}$Sn$_{x}$ layers is presented. A model is introduced for the Raman mode energy shift as a function of temperature, comprising thermal expansion of the strained lattice and anharmonic corrections. With support of x-ray diffraction, the model is calibrated on experimental data of epitaxial Ge grown on Si and Ge$_{1-x}$Sn$_{x}$ grown on Ge/Si, finding that the main difference between bulk and epitaxial layers is related to the anisotropic lattice expansion. The phonon anharmonicity and other parameters do not depend on dislocation defect density (in the range $7\cdot 10^6$ - $4\cdot 10^8$ cm$^{-2}$) nor on alloy composition in the range 5-14 at.%. The strain-shift coefficient for the main model of Ge and for the Ge-Ge vibrational mode of Ge$_{1-x}$Sn$_{x}$ is weakly dependent on temperature and is around -500 cm$^{-1}$. In Ge$_{1-x}$Sn$_{x}$, the composition-shift coefficient amounts to -100 cm$^{-1}$, independent of temperature and strain. △ Less

Submitted 5 February, 2024; originally announced February 2024.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. Mater. 8 (2024) 023801

Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon

Authors: Kevin Janßen, Philipp Rüßmann, Sergej Liberda, Michael Schleenvoigt, Xiao Hou, Abdur Rehman Jalil, Florian Lentz, Stefan Trellenkamp, Benjamin Bennemann, Erik Zimmermann, Gregor Mussler, Peter Schüffelgen, Claus-Michael Schneider, Stefan Blügel, Detlev Grützmacher, Lukasz Plucinski, Thomas Schäpers

Abstract: With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricate… ▽ More With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in situ fabricated Nb/$\mathrm{(Bi_{0.15}Sb_{0.85})_2Te_3}$ nano interface. The resulting high interface transparency is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Comments: Main manuscript: 11 pages, 6 figures, Supplementary material: 10 pages, 9 figures

Atomic diffusion-induced polarization and superconductivity in topological insulator-based heterostructures

Authors: Xian-Kui Wei, Abdur Rehman Jalil, Philipp Rüßmann, Yoichi Ando, Detlev Grützmacher, Stefan Blügel, Joachim Mayer

Abstract: The proximity effect at a highly transparent interface of an s-wave superconductor (S) and a topological insulator (TI) provides a promising platform to create Majorana zero modes in artificially designed heterostructures. However, structural and chemical issues pertinent to such interfaces are poorly explored so far. Here, we report the discovery of Pd diffusion induced polarization at interfaces… ▽ More The proximity effect at a highly transparent interface of an s-wave superconductor (S) and a topological insulator (TI) provides a promising platform to create Majorana zero modes in artificially designed heterostructures. However, structural and chemical issues pertinent to such interfaces are poorly explored so far. Here, we report the discovery of Pd diffusion induced polarization at interfaces between superconductive Pd$_{1+x}$(Bi$_{0.4}$Te$_{0.6}$)$_2$ (xPBT, $0\le x \le 1$) and Pd-intercalated Bi$_2$Te$_3$ by using atomic-resolution scanning transmission electron microscopy. Our quantitative image analysis reveals that nanoscale lattice strain and QL polarity synergistically suppress and promote the Pd diffusion at the normal and parallel interfaces, formed between Te-Pd-Bi triple layers (TLs) and Te-Bi-Te-Bi-Te quintuple layers (QLs), respectively. Further, our first-principles calculations unveil that the superconductivity of xPBT phase and topological nature of Pd-intercalated Bi$_2$Te$_3$ phase are robust against the broken inversion symmetry. These findings point out the necessity of considering coexistence of electric polarization with superconductivity and topology in such S-TI systems. △ Less

Submitted 28 November, 2023; originally announced November 2023.

In-plane magnetic field driven conductance modulations in topological insulator kinks

Authors: Gerrit Behner, Kristof Moors, Yong Zhang, Michael Schleenvoigt, Alina Rupp, Erik Zimmermann, Abdur Rehman Jalil, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects the… ▽ More We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects their transmission across the kink. This magnetic field-driven trapping and conductance pattern can be explained with a semiclassical picture and is supported by quantum transport simulations. The interpretation is corroborated by varying the angle of the kink and analyzing the temperature dependence of the observed magnetoconductance pattern, indicating the importance of phase coherence along the cross section perimeter of the kink legs. △ Less

Submitted 1 May, 2024; v1 submitted 10 October, 2023; originally announced October 2023.

Comments: Main Text (7 pages, 4 figures) and Supplemental Material (3 pages, 3 figures)

Journal ref: Phys. Rev. B 109, 155429 (2024)

Induced Superconductivity in Hybrid Au/YBa2Cu3O7-x Electrodes on Vicinal Substrates

Authors: Irina I. Gundareva, Jose Martinez-Castro, F. Stefan Tautz, Detlev Grützmacher, Thomas Schäpers, Matvey Lyatti

Abstract: Superconducting electrodes are an integral part of hybrid Josephson junctions used in many applications including quantum technologies. We report on the fabrication and characterization of superconducting hybrid Au/YBa2Cu3O7-x (YBCO) electrodes on vicinal substrates. In these structures, superconducting CuO2-planes face the gold film, resulting in a higher value and smaller variation of the induce… ▽ More Superconducting electrodes are an integral part of hybrid Josephson junctions used in many applications including quantum technologies. We report on the fabrication and characterization of superconducting hybrid Au/YBa2Cu3O7-x (YBCO) electrodes on vicinal substrates. In these structures, superconducting CuO2-planes face the gold film, resulting in a higher value and smaller variation of the induced energy gap compared to the conventional Au/YBCO electrodes based on films with the c-axis normal to the substrate surface. Using scanning tunneling microscopy, we observe an energy gap of about 10-17 meV at the surface of the 15- nm-thick gold layer deposited in situ atop the YBCO film. To study the origin of this gap, we fabricate nanoconstrictions from the Au/YBCO heterostructure and measure their electrical transport characteristics. The conductance of the nanoconstrictions shows a series of dips due to multiple Andreev reflections in YBCO and gold providing clear evidence of the superconducting nature of the gap in gold. We consider the Au/YBCO electrodes to be a versatile platform for hybrid Josephson devices with a high operating temperature. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Current-induced magnetization switching in a magnetic topological insulator heterostructure

Authors: Erik Zimmermann, Justus Teller, Michael Schleenvoigt, Gerrit Behner, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias current dependence of the coercive field, which is attributed to the effect of the spin-orbit torque provided by the unpolarized bias current. Increasing the bias c… ▽ More We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias current dependence of the coercive field, which is attributed to the effect of the spin-orbit torque provided by the unpolarized bias current. Increasing the bias current leads to a decrease in the magnetic order in the sample. When the applied current is subsequently reduced, the magnetic moments align with an externally applied magnetic field, resulting in repolarization in the opposite direction. This includes a reversal of the spin polarisation and hence a reversal of the chiral edge mode. Possible applications in spintronic devices are discussed. △ Less

Submitted 15 August, 2023; originally announced August 2023.

Comments: 6 pages, 3 figures (5 pages and 5 figures in supplementary information)

Fourier transformation based analysis routine for intermixed longitudinal and transversal hysteretic data for the example of a magnetic topological insulator

Authors: Erik Zimmermann, Michael Schleenvoigt, Alina Rupp, Gerrit Behner, Jan Karthein, Justus Teller, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: We present a symmetrization routine that optimizes and eases the analysis of data featuring the anomalous Hall effect. This technique can be transferred to any hysteresis with (point-)symmetric behaviour. The implementation of the method is demonstrated exemplarily using intermixed longitudinal and transversal data obtained from a chromium-doped ternary topological insulator revealing a clear hyst… ▽ More We present a symmetrization routine that optimizes and eases the analysis of data featuring the anomalous Hall effect. This technique can be transferred to any hysteresis with (point-)symmetric behaviour. The implementation of the method is demonstrated exemplarily using intermixed longitudinal and transversal data obtained from a chromium-doped ternary topological insulator revealing a clear hysteresis. Furthermore, by introducing a mathematical description of the anomalous Hall hysteresis based on the error function precise values of the height and coercive field are determined. △ Less

Submitted 31 July, 2023; originally announced July 2023.

Comments: 6 pages, 6 figures, supplementary information include

Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer

Authors: Agnieszka Anna Corley-Wiciak, Shunda Chen, Omar Concepción, Marvin Hartwig Zoellner, Detlev Grützmacher, Dan Buca, Tianshu Li, Giovanni Capellini, Davide Spirito

Abstract: The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as is the case of epitaxial Ge1-xSnx layers. In this work, we investigate the arrangement of Ge and Sn atoms in optoelectronic grade Ge1-xSnx epitaxial layers feat… ▽ More The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as is the case of epitaxial Ge1-xSnx layers. In this work, we investigate the arrangement of Ge and Sn atoms in optoelectronic grade Ge1-xSnx epitaxial layers featuring a Sn content in the 5-14% range by using polarization-dependent Raman spectroscopy and density-functional-theory calculations. The thorough analysis of the polarization-dependent spectra in parallel and perpendicular configuration allowed us to properly tag all the observed vibrational modes, and to shed light on that associated to disorder-assisted Raman transitions. Indeed, with the help of large-scale atomistic simulations, we were able to highlight how the presence of Sn atoms, that modify the local environments of Ge atoms, gives rise to two spectral features at different Raman shifts, corresponding to distortions of the atomic bonds. This analysis provides a valuable framework for advancing the understanding of the vibrational properties in Ge1-xSnx alloys, particularly with regard to the impact of local ordering of the different atomic species. △ Less

Submitted 11 August, 2023; v1 submitted 10 May, 2023; originally announced May 2023.

Comments: 20 pages, 10 figures, Accepted Manuscript of a Published Paper in Physical Review

Journal ref: PhysRevApplied. 20 (2023) 024021

Optical properties of MoSe$_2$ monolayer implanted with ultra-low energy Cr ions

Authors: Minh N. Bui, Stefan Rost, Manuel Auge, Lanqing Zhou, Christoph Friedrich, Stefan Blügel, Silvan Kretschmer, Arkady V. Krasheninnikov, Kenji Watanabe, Takashi Taniguchi, Hans C. Hofsäss, Detlev Grützmacher, Beata E. Kardynał

Abstract: The paper explores the optical properties of an exfoliated MoSe$_2$ monolayer implanted with Cr$^+$ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe$_2$ reveals an emission line from Cr-related defects that is present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterised by non-zero activation energy, long lifetimes, and wea… ▽ More The paper explores the optical properties of an exfoliated MoSe$_2$ monolayer implanted with Cr$^+$ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe$_2$ reveals an emission line from Cr-related defects that is present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterised by non-zero activation energy, long lifetimes, and weak response to the magnetic field. To rationalise the experimental results and get insights into the atomic structure of the defects, we modelled the Cr-ion irradiation process using ab-initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of 2D materials by doping. △ Less

Submitted 25 April, 2023; v1 submitted 21 April, 2023; originally announced April 2023.

Quantum size effects in ultra-thin YBa2Cu3O7-x films

Authors: M. Lyatti, I. Gundareva, T. Röper, Z. Popovic, A. R. Jalil, D. Grützmacher, T. Schäpers

Abstract: The d-wave symmetry of the order parameter with zero energy gap in nodal directions stands in the way of using high-temperature superconductors for quantum applications. We investigate the symmetry of the order parameter in ultra-thin YBa2Cu3O7-x (YBCO) films by measuring the electrical transport properties of nanowires and nanoconstrictions aligned at different angles relative to the main crystal… ▽ More The d-wave symmetry of the order parameter with zero energy gap in nodal directions stands in the way of using high-temperature superconductors for quantum applications. We investigate the symmetry of the order parameter in ultra-thin YBa2Cu3O7-x (YBCO) films by measuring the electrical transport properties of nanowires and nanoconstrictions aligned at different angles relative to the main crystallographic axes. The anisotropy of the nanowire critical current in the nodal and antinodal directions reduces with the decrease in the film thickness. The Andreev reflection spectroscopy shows the presence of a thickness-dependent energy gap that doesn't exist in bulk YBCO. We find that the thickness-dependent energy gap appears due to the quantum size effects in ultra-thin YBCO films that open the superconducting energy gap along the entire Fermi surface. The fully gapped state of the ultra-thin YBCO films makes them a very promising platform for quantum applications, including quantum computing and quantum communications. △ Less

Submitted 23 October, 2023; v1 submitted 7 April, 2023; originally announced April 2023.

Comments: Supplementary Information is updated

Aharonov-Bohm interference and phase-coherent surface-state transport in topological insulator rings

Authors: Gerrit Behner, Abdur Rehman Jalil, Dennis Heffels, Jonas Kölzer, Kristof Moors, Jonas Mertens, Erik Zimmermann, Gregor Mussler, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations… ▽ More We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations originate from ballistic transport along the ring arms. The oscillations can therefore be attributed to topological surface states, which can maintain a quasi-ballistic transport regime in the presence of disorder. Further insight on the phase coherence is gained by comparing with similar Aharonov-Bohm-type oscillations in topological insulator nanoribbons exposed to an axial magnetic field. Here, quasi-ballistic phase-coherent transport is confirmed for closed-loop topological surface states in transverse direction enclosing the cross-section of the nanoribbon. In contrast, the appearance of universal conductance fluctuations indicates phase-coherent transport in the diffuse regime, which is attributed to bulk carrier transport. Thus, it appears that even in the presence of diffusive $p$-type charge carriers in Aharonov-Bohm ring structures, phase-coherent quasi-ballistic transport of topologically protected surface states is maintained over long distances. △ Less

Submitted 3 March, 2023; originally announced March 2023.

Comments: 11 pages (including Supplementary Material), 5 figures, 4 supplementary figures

Robust Majorana bound states in magnetic topological insulator nanoribbons with fragile chiral edge channels

Authors: Declan Burke, Dennis Heffels, Kristof Moors, Peter Schüffelgen, Detlev Grützmacher, Malcolm R. Connolly

Abstract: Magnetic topological insulators in the quantum anomalous Hall regime host ballistic chiral edge channels. When proximitized by an $s$-wave superconductor, these edge states offer the potential for realizing topological superconductivity and Majorana bound states without the detrimental effect of large externally-applied magnetic fields on superconductivity. Realizing well-separated unpaired Majora… ▽ More Magnetic topological insulators in the quantum anomalous Hall regime host ballistic chiral edge channels. When proximitized by an $s$-wave superconductor, these edge states offer the potential for realizing topological superconductivity and Majorana bound states without the detrimental effect of large externally-applied magnetic fields on superconductivity. Realizing well-separated unpaired Majorana bound states requires magnetic topological insulator ribbons with a width of the order of the transverse extent of the edge state, however, which is expected to bring the required ribbon width down to around 100 nm. In this regime, it is known to be extremely difficult to retain the ballistic nature of chiral edge channels and realize a quantized Hall conductance. In this paper, we study the impact of disorder in such magnetic topological insulator nanoribbons and compare the fragility of ballistic chiral edge channels with the stability of Majorana bound states when the ribbon is covered by a superconducting film. We find that the Majorana bound states exhibit greater robustness against disorder than the underlying chiral edge channels. △ Less

Submitted 23 January, 2024; v1 submitted 21 February, 2023; originally announced February 2023.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 109, 045138 (2024)

Observation of Josephson Harmonics in Tunnel Junctions

Authors: Dennis Willsch, Dennis Rieger, Patrick Winkel, Madita Willsch, Christian Dickel, Jonas Krause, Yoichi Ando, Raphaël Lescanne, Zaki Leghtas, Nicholas T. Bronn, Pratiti Deb, Olivia Lanes, Zlatko K. Minev, Benedikt Dennig, Simon Geisert, Simon Günzler, Sören Ihssen, Patrick Paluch, Thomas Reisinger, Roudy Hanna, Jin Hee Bae, Peter Schüffelgen, Detlev Grützmacher, Luiza Buimaga-Iarinca, Cristian Morari , et al. (5 additional authors not shown)

Abstract: Superconducting quantum processors have a long road ahead to reach fault-tolerant quantum computing. One of the most daunting challenges is taming the numerous microscopic degrees of freedom ubiquitous in solid-state devices. State-of-the-art technologies, including the world's largest quantum processors, employ aluminum oxide (AlO$_x$) tunnel Josephson junctions (JJs) as sources of nonlinearity,… ▽ More Superconducting quantum processors have a long road ahead to reach fault-tolerant quantum computing. One of the most daunting challenges is taming the numerous microscopic degrees of freedom ubiquitous in solid-state devices. State-of-the-art technologies, including the world's largest quantum processors, employ aluminum oxide (AlO$_x$) tunnel Josephson junctions (JJs) as sources of nonlinearity, assuming an idealized pure $\sin\varphi$ current-phase relation (C$\varphi$R). However, this celebrated $\sin\varphi$ C$\varphi$R is only expected to occur in the limit of vanishingly low-transparency channels in the AlO$_x$ barrier. Here we show that the standard C$\varphi$R fails to accurately describe the energy spectra of transmon artificial atoms across various samples and laboratories. Instead, a mesoscopic model of tunneling through an inhomogeneous AlO$_x$ barrier predicts %-level contributions from higher Josephson harmonics. By including these in the transmon Hamiltonian, we obtain orders of magnitude better agreement between the computed and measured energy spectra. The reality of Josephson harmonics transforms qubit design and prompts a reevaluation of models for quantum gates and readout, parametric amplification and mixing, Floquet qubits, protected Josephson qubits, etc. As an example, we show that engineered Josephson harmonics can reduce the charge dispersion and the associated errors in transmon qubits by an order of magnitude, while preserving anharmonicity. △ Less

Submitted 22 August, 2023; v1 submitted 17 February, 2023; originally announced February 2023.

Journal ref: Nat. Phys. 20, 815 (2024)

Ballistic surface channels in fully in situ defined Bi$_4$Te$_3$ Josephson junctions with aluminum contacts

Authors: Daniel Rosenbach, Abdur R. Jalil, Tobias W. Schmitt, Benjamin Bennemann, Gregor Mussler, Peter Schüffelgen, Detlev Grützmacher, Thomas Schäpers

Abstract: In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insulator, for which due to time-reversal and mirror symmetry both a strong topological insulator phase as well as a crystalline topological phase co-exist. The format… ▽ More In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insulator, for which due to time-reversal and mirror symmetry both a strong topological insulator phase as well as a crystalline topological phase co-exist. The formation of a supercurrent through the Bi$_4$Te$_3$ layer is explained by a two-step process. First, due to the close proximity of the Al/Ti electrodes a superconducting gap is induced within the Bi$_4$Te$_3$ layer right below the electrodes. The size of this gap is determined by analysing multiple Andreev reflections (MARs) identified within the devices differential resistance at low voltage biases. Second, based on the Andreev reflection and reverse Andreev reflection processes a supercurrent establishes in the weak link region in between these two proximity coupled regions. Analyses of the temperature dependency of both the critical current as well as MARs indicate mostly ballistic supercurrent contributions in between the proximitized Bi$_4$Te$_3$ regions even though the material is characterized by a semi-metallic bulk phase. The presence of these ballistic modes gives indications on the topological nature of Bi$_4$Te$_3$. △ Less

Submitted 10 January, 2023; originally announced January 2023.

Comments: 21 pages, 4 figures, 2 supplementary figures

Supercurrent in Bi$_4$Te$_3$ Topological Material-Based Three-Terminal Junctions

Authors: Jonas Kölzer, Abdur Rehman Jalil, Daniel Rosenbach, Lisa Arndt, Gregor Mussler, Peter Schüffelgen, Detlev Grützmacher, Hans Lüth, Thomas Schäpers

Abstract: In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of t… ▽ More In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of the junctions is interpreted using a numerical simulation of a similar geometry based on a resistively and capacitively shunted Josephson junction model. The temperature dependency indicates that the device behaves similar to prior experiments with single Josephson junctions comprising topological insulators weak links. Irradiating radio frequencies to the junction we find a spectrum of integer Shapiro steps and an additional fractional step, which is interpreted by a skewed current-phase relationship. In a perpendicular magnetic field we observe Fraunhofer-like interference patterns of the switching currents. △ Less

Submitted 3 January, 2023; originally announced January 2023.

Comments: 8 pages, 7 Figures, includes Supplementary Information, submitted to Nanomaterials

Robust and fragile Majorana bound states in proximitized topological insulator nanoribbons

Authors: Dennis Heffels, Declan Burke, Malcolm R. Connolly, Peter Schüffelgen, Detlev Grützmacher, Kristof Moors

Abstract: Topological insulator (TI) nanoribbons with proximity-induced superconductivity are a promising platform for Majorana bound states (MBSs). In this work, we consider a detailed modeling approach for a TI nanoribbon in contact with a superconductor via its top surface, which induces a superconducting gap in its surface-state spectrum. The system displays a rich phase diagram with different numbers o… ▽ More Topological insulator (TI) nanoribbons with proximity-induced superconductivity are a promising platform for Majorana bound states (MBSs). In this work, we consider a detailed modeling approach for a TI nanoribbon in contact with a superconductor via its top surface, which induces a superconducting gap in its surface-state spectrum. The system displays a rich phase diagram with different numbers of end-localized MBSs as a function of chemical potential and magnetic flux piercing the cross section of the ribbon. These MBSs can be robust or fragile upon consideration of electrostatic disorder. We simulate a tunneling spectroscopy setup to probe the different topological phases of top-proximitized TI nanoribbons. Our simulation results indicate that a top-proximitized TI nanoribbon is ideally suited for realizing fully gapped topological superconductivity, in particular when the Fermi level is pinned near the Dirac point. In this regime, the setup yields a single pair of MBSs, well separated at opposite ends of the proximitized ribbon, which gives rise to a robust quantized zero-bias conductance peak. △ Less

Submitted 22 February, 2023; v1 submitted 29 December, 2022; originally announced December 2022.

Comments: 12 pages, 5 figures

Journal ref: Nanomaterials 13, 723 (2023)

In-plane anisotropy of electrical transport in Y$_{0.85}$Tb$_{0.15}$Ba$_2$Cu$_3$O$_{7-x}$ films

Authors: M. Lyatti, I. Kraiem, T. Röper, I. Gundareva, G. Mussler, D. Grützmacher, T. Schäpers

Abstract: We fabricate high-quality c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-x}$ films with 15% of yttrium atoms replaced by terbium (YTBCO) and study their electrical properties. The Tb substitution reduces the charge carrier density resulting in increased resistivity and decreased critical current density compared to the pure YBa$_2$Cu$_3$O$_{7-x}$ films. The electrical properties of the YTBCO films s… ▽ More We fabricate high-quality c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-x}$ films with 15% of yttrium atoms replaced by terbium (YTBCO) and study their electrical properties. The Tb substitution reduces the charge carrier density resulting in increased resistivity and decreased critical current density compared to the pure YBa$_2$Cu$_3$O$_{7-x}$ films. The electrical properties of the YTBCO films show an in-plane anisotropy in both the superconducting and normal state providing evidence for the twin-free film. Unexpectedly, the resistive transition of the bridges also demonstrates the in-plane anisotropy that can be explained within the framework of Tinkham's model of the resistive transition and the Berezinskii-Kosterlitz-Thouless (BKT) model depending on the sample parameters. We consider YTBCO films to be a promising platform for both the fundamental research on the BKT transition in the cuprate superconductors and for the fabrication of devices with high kinetic inductance. △ Less

Submitted 16 November, 2023; v1 submitted 4 November, 2022; originally announced November 2022.

Comments: XRD data and reference list are updated

Efficient, Spectrally Tunable Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars

Authors: Y. Kutovyi, M. M. Jansen, S. Qiao, C. Falter, N. von den Driesch, T. Brazda, N. Demarina, S. Trellenkamp, B. Bennemann, D. Grützmacher, A. Pawlis

Abstract: Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as… ▽ More Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as a highly efficient solid-state single-photon source operating at cryogenic temperatures. We show that single photons are generated due to the radiative recombination of excitons bound to neutral Cl atoms in ZnSe QW and the energy of the emitted photon can be tuned from about 2.85 down to 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following the developed advanced technology we fabricate NPs with a diameter of about 250 nm using a combination of dry and wet-chemical etching of epitaxially grown ZnSe/ZnMgSe QW well structures. The remaining resist mask serves as a spherical- or cylindrical-shaped solid immersion lens on top of NPs and leads to the emission intensity enhancement by up to an order of magnitude in comparison to the pillars without any lenses. NPs with spherical-shaped lenses show the highest emission intensity values. The clear photon-antibunching effect is confirmed by the measured value of the second-order correlation function at a zero time delay of 0.14. The developed single-photon sources are suitable for integration into scalable photonic circuits. △ Less

Submitted 20 May, 2022; originally announced May 2022.

Probing edge state conductance in ultra-thin topological insulator films

Authors: Arthur Leis, Michael Schleenvoigt, Kristof Moors, Helmut Soltner, Vasily Cherepanov, Peter Schüffelgen, Gregor Mussler, Detlev Grützmacher, Bert Voigtländer, Felix Lüpke, F. Stefan Tautz

Abstract: Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge st… ▽ More Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge states in nanoscale spectroscopy, and the detection of ballistic transport in edge channels which typically relies on transport experiments with microscale lithographic contacts. Here, we study few-layer films of the three-dimensional topological insulator (Bi$_{x}$Sb$_{1-x})_2$Te$_3$, for which a topological transition to a two-dimensional topological QSH insulator phase has been proposed. Indeed, an edge state in the local density of states is observed within the band gap. Yet, in nanoscale transport experiments with a four-tip STM, 2 and 3 quintuple layer films do not exhibit a ballistic conductance in the edge channels. This demonstrates that the detection of edge states in spectroscopy can be misleading with regard to the identification of a QSH phase. In contrast, nanoscale multi-tip transport experiments are a robust method for effectively pinpointing ballistic edge channels, as opposed to trivial edge states, in quantum materials. △ Less

Submitted 7 April, 2022; originally announced April 2022.

Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures

Authors: T. Schumann, T. Kleinke, L. Braun, N. Meyer, G. Mussler, J. Kampmeier, D. Grützmacher, E. Schmoranzerova, K. Olejník, H. Reichlová, C. Heiliger, C. Denker, J. Walowski, T. Kampfrath, M. Münzenberg

Abstract: We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiment… ▽ More We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface. △ Less

Submitted 3 February, 2022; originally announced February 2022.

Comments: 15 pages,5 figures

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Authors: Patrick Zellekens, Russell Deacon, Pujitha Perla, Detlev Grützmacher, Mihail Ion Lepsa, Thomas Schäpers, Koji Ishibashi

Abstract: Josephson junctions based on semiconductor nanowires are potential building blocks for electrically tunable qubit structures, e.g. the gatemon or the Andreev qubit. However, an actual realization requires the thorough investigation of the intrinsic excitation spectrum. Here, we demonstrate the fabrication of low-loss superconducting microwave circuits that combine high quality factors with a well-… ▽ More Josephson junctions based on semiconductor nanowires are potential building blocks for electrically tunable qubit structures, e.g. the gatemon or the Andreev qubit. However, an actual realization requires the thorough investigation of the intrinsic excitation spectrum. Here, we demonstrate the fabrication of low-loss superconducting microwave circuits that combine high quality factors with a well-controlled gate architecture by utilizing a flip-chip approach. This platform is then used to perform single-tone and two-tone experiments on Andreev states in in-situ grown InAs/Al core/half-shell nanowires with shadow mask defined Josephson junctions. In gate-controlled and flux-biased spectroscopic measurements we find clear signatures of single quasiparticle as well as quasiparticle pair transitions between discrete Andreev bound states mediated by photon-absorption. Our experimental findings are supported by simulations that show that the junction resides in the intermediate channel length regime. △ Less

Submitted 16 December, 2021; originally announced December 2021.

Comments: 11 pages, 6 figures

Te-doped selective-area grown InAs nanowires for superconducting hybrid devices

Authors: Pujitha Perla, Anton Faustmann, Sebastian Koelling, Patrick Zellekens, Russell Deacon, H. Aruni Fonseka, Jonas Kölzer, Yuki Sato, Ana M. Sanchez, Oussama Moutanabbir, Koji Ishibashi, Detlev Grützmacher, Mihail Ion Lepsa, Thomas Schäpers

Abstract: Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were als… ▽ More Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined with atomic probe tomography to obtain information about the local incorporation of Te atoms. It was found that the Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. The efficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, a Josephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed a clear increase of the critical current with increase of the dopant concentration. △ Less

Submitted 18 October, 2021; originally announced October 2021.

Comments: 9 pages, 9 figures

Lifting the spin-momentum locking in ultra-thin topological insulator films

Authors: Arthur Leis, Michael Schleenvoigt, Vasily Cherepanov, Felix Lüpke, Peter Schüffelgen, Gregor Mussler, Detlev Grützmacher, Bert Voigtländer, F. Stefan Tautz

Abstract: Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological surface states at the top and bottom surfaces results in a topological quantum phase transition, which can lead to the emergence of a quantum spin Hal… ▽ More Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological surface states at the top and bottom surfaces results in a topological quantum phase transition, which can lead to the emergence of a quantum spin Hall phase. Here, we study the thickness-dependent transport properties across the quantum phase transition on the example of (Bi$_{0.16}$Sb$_{0.84}$)$_2$Te$_3$ films, with a four-tip scanning tunnelling microscope. Our findings reveal an exponential drop of the conductivity below the critical thickness. The steepness of this drop indicates the presence of spin-conserving backscattering between the top and bottom surface states, effectively lifting the spin-momentum locking and resulting in the opening of a gap at the Dirac point. Our experiments provide crucial steps towards the detection of quantum spin Hall states in transport measurements. △ Less

Submitted 11 June, 2021; originally announced June 2021.

Journal ref: Adv. Quantum Technol. 4, 2100083 (2021)

Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons

Authors: Daniel Rosenbach, Kristof Moors, Abdur R. Jalil, Jonas Kölzer, Erik Zimmermann, Jürgen Schubert, Soraya Karimzadah, Gregor Mussler, Peter Schüffelgen, Detlev Grützmacher, Hans Lüth, Thomas Schäpers

Abstract: Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berr… ▽ More Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berry phase offset of $π$ of self-interfering charge carriers an energy gap within the surface state dispersion appears and all states become spin-degenerate. We investigate and compare the magnetic field dependent surface state dispersion in selectively deposited Bi$_2$Te$_3$ TI micro- and nanoribbon structures by analysing the gate voltage dependent magnetoconductance at cryogenic temperatures. While in wide microribbon devices the field effect mainly changes the amount of bulk charges close to the top surface we identify coherent transverse surface states along the perimeter of the nanoribbon devices responding to a change in top gate potential. We quantify the energetic spacing in between these quantized transverse subbands by using an electrostatic model that treats an initial difference in charge carrier densities on the top and bottom surface as well as remaining bulk charges. In the gate voltage dependent transconductance we find oscillations that change their relative phase by $π$ at half-integer values of the magnetic flux quantum applied coaxial to the nanoribbon, which is a signature for a magnetic flux dependent topological phase transition in narrow, selectively deposited TI nanoribbon devices. △ Less

Submitted 8 February, 2022; v1 submitted 7 April, 2021; originally announced April 2021.

Comments: 20 pages, 5 figures

Journal ref: SciPost Physics Core 5, 017 (2022)

In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions

Authors: Jonas Kölzer, Kristof Moors, Abur R. Jalil, Erik Zimmermann, Daniel Rosenbach, Lidia Kibkalo, Peter Schüffelgen, Gregor Mussler, Detlev Grützmacher, Thomas L. Schmidt, Hans Lüth, Thomas Schäpers

Abstract: Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an… ▽ More Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an in-plane magnetic field, the orbital effect cannot be neglected when the surface states are confined to the boundary of a nanoribbon geometry. Here, we report on the magnetotransport properties of such three-terminal junctions. We observe a dependence of the current on the in-plane magnetic field, with a distinct steering pattern of the surface state current towards a preferred output terminal for different magnetic field orientations. We demonstrate that this steering effect originates from the orbital effect, trapping the phase-coherent surface states in the different legs of the junction on opposite sides of the nanoribbon and breaking the left-right symmetry of the transmission across the junction. The reported magnetotransport properties demonstrate that an in-plane magnetic field is not only relevant but also very useful for the characterization and manipulation of transport in three-dimensional topological insulator nanoribbon-based junctions and circuits, acting as a topoelectric current switch. △ Less

Submitted 22 December, 2021; v1 submitted 30 December, 2020; originally announced December 2020.

Comments: Main Text (8 pages, 5 figures) + Supplemental Material (13 pages, 10 figures)

Journal ref: Commun. Mater. 2, 116 (2021)

Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation

Authors: Pujitha Perla, H. Aruni Fonseka, Patrick Zellekens, Russell Deacon, Yisong Han, Jonas Kölzer, Timm Mörstedt, Benjamin Bennemann, Koji Ishibashi, Detlev Grützmacher, Ana M. Sanchez, Mihail Ion Lepsa, Thomas Schäpers

Abstract: Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shad… ▽ More Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shadow evaporation of Nb on pairs of InAs nanowires grown selectively on two adjacent tilted Si (111) facets and crossing each other at a small distance. The upper wire relative to the deposition source acts as a shadow mask determining the gap of the superconducting electrodes on the lower nanowire. Electron microscopy measurements show that the fully in-situ fabrication method gives a clean InAs/Nb interface. A clear Josephson supercurrent is observed in the current-voltage characteristics, which can be controlled by a bottom gate. The excess current of 0.68 indicates a high junction transparency. Under microwave radiation, pronounced integer Shapiro steps are observed suggesting a sinusoidal current-phase relation. Owing to the large critical field of Nb, the Josephson supercurrent can be maintained to magnetic fields exceeding 1 T. Our results show that in-situ prepared Nb/InAs nanowire contacts are very interesting candidates for superconducting quantum circuits requiring large magnetic fields. △ Less

Submitted 12 November, 2020; originally announced November 2020.

Comments: 9 pages, 6 figures, supplementary information

Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices

Authors: Jinzhong Zhang, Pok-Lam Tse, Abdur-Rehman Jalil, Jonas Kölzer, Daniel Rosenbach, Martina Luysberg, Gregory Panaitov, Hans Lüth, Zhigao Hu, Detlev Grützmacher, Jia Grace Lu, Thomas Schäpers

Abstract: Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determine… ▽ More Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determined for the hole carriers. The distinct phase-coherence is confirmed by the observation of Aharonov--Bohm type oscillations for magnetic fields applied along the nanowire axis. We interpret the occurrence of these magnetic flux-periodic oscillations by the formation of a tubular hole accumulation layer on the nanowire surface. In addition, for Nb/GeTe-nanowire/Nb Josephson junctions, we obtained a proximity-induced critical current of about 0.2$μ$A at 0.4K. By applying a magnetic field perpendicular to the nanowire axis, the critical current decreases monotonously with increasing magnetic field, which indicates that the structure is in the small-junction-limit. Whereas, by applying a parallel magnetic field the critical current oscillates with a period of the magnetic flux quantum indicating once again the presence of a tubular hole channel. △ Less

Submitted 15 September, 2020; originally announced September 2020.

Comments: 9 pages, 4 figures

Integration of topological insulator Josephson junctions in superconducting qubit circuits

Authors: Tobias W. Schmitt, Malcolm R. Connolly, Michael Schleenvoigt, Chenlu Liu, Oscar Kennedy, José M. Chávez-Garcia, Abdur R. Jalil, Benjamin Bennemann, Stefan Trellenkamp, Florian Lentz, Elmar Neumann, Tobias Lindström, Sebastian E. de Graaf, Erwin Berenschot, Niels Tas, Gregor Mussler, Karl D. Petersson, Detlev Grützmacher, Peter Schüffelgen

Abstract: The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we… ▽ More The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with $(Bi_{0.06}Sb_{0.94})_{2}Te_{3}$ topological insulator (TI) JJs using ultra-high vacuum fabrication techniques. Microwave losses on our substrates with monolithically integrated hardmask, used for selective area growth of TI nanostructures, imply microsecond limits to relaxation times and thus their compatibility with strong-coupling cQED. We use the cavity-qubit interaction to show that the Josephson energy of TI-based transmons scales with their JJ dimensions and demonstrate qubit control as well as temporal quantum coherence. Our results pave the way for advanced investigations of topological materials in both novel Josephson and topological qubits. △ Less

Submitted 18 September, 2021; v1 submitted 8 July, 2020; originally announced July 2020.

Comments: A second experimental run allowed for time-domain measurements of a TI-based transmon qubit. In the updated manuscript additional data on qubit control and coherence are included. Taking account of these new results, the focus and the title of the manuscript have been reworked, 14 pages, 10 figures

Journal ref: Nano Lett. 22, 7 (2022) 2595-2602

Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction

Authors: Patrick Zellekens, Russell Deacon, Pujitha Perla, H. Aruni Fonseka, Timm Moerstedt, Steven A. Hindmarsh, Benjamin Bennemann, Florian Lentz, Mihail Ion Lepsa, Ana M. Sanchez, Detlev Grützmacher, Koji Ishibashi, Thomas Schäpers

Abstract: Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be… ▽ More Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be precisely controlled. We fabricated self-defined InAs/Al core/shell nanowire junctions by a fully in-situ approach, which meet all these criteria. Transmission electron microscopy measurements confirm the sharp and clean interface between the nanowire and the in-situ deposited Al electrodes which were formed by means of shadow evaporation. Furthermore, we report on tunnel spectroscopy, gate and magnetic field-dependent transport measurements. The achievable short junction lengths,the observed hard-gap and the magnetic field robustness make this new hybrid structure very attractive for applications which rely on a precise control of the number of sub-gap states, like Andreev qubits or topological systems. △ Less

Submitted 29 July, 2020; v1 submitted 21 April, 2020; originally announced April 2020.

Comments: 9 pages, 6 figures. Inclusion of additional TEM and EDX data

Journal ref: Phys. Rev. Applied 14, 054019 (2020)

Quantum transport in topological surface states of Bi$_2$Te$_3$ nanoribbons

Authors: Daniel Rosenbach, Nico Oellers, Abdur Rehman Jalil, Martin Mikulics, Jonas Kölzer, Erik Zimmermann, Gregor Mussler, Stephany Bunte, Detlev Grützmacher, Hans Lüth, Thomas Schäpers

Abstract: Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi$_2$Te$_3$ topological insulator nanoribbo… ▽ More Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi$_2$Te$_3$ topological insulator nanoribbons and nano Hall bars at cryogenic temperatures for their topological properties. The Hall bars are defined in deep-etched Si$_3$N$_4$/SiO$_2$ nano-trenches on a silicon (111) substrate followed by a selective area growth process via molecular beam epitaxy. The selective area growth is beneficial to the device quality, as no subsequent fabrication needs to be performed to shape the nanoribbons. Transmission line measurements are performed to evaluate contact resistances of Ti/Au contacts applied as well as the specific resistance of the Bi$_2$Te$_3$ binary topological insulator. In the diffusive transport regime of these unintentionally $n$-doped Bi$_2$Te$_3$ topological insulator nano Hall bars, we identify distinguishable electron trajectories by analyzing angle-dependent universal conductance fluctuation spectra. When the sample is tilted from a perpendicular to a parallel magnetic field orientation, these high frequent universal conductance fluctuations merge with low frequent Aharonov-Bohm type oscillations originating from the topologically protected surface states encircling the nanoribbon cross section. For 500 nm wide Hall bars we also identify low frequent Shubnikov-de Haas oscillations in the perpendicular field orientation, that reveal a topological high-mobility 2D transport channel, partially decoupled from the bulk of the material. △ Less

Submitted 24 January, 2020; originally announced January 2020.

Comments: 13 pages, 5 figures, 6 pages supplementary information, 5 supplementary figures

Report number: aelm.202000205

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

Authors: A. Elbaz, D. Buca, N. Von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J. -M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grutzmacher, M. El Kurdi

Abstract: GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn la… ▽ More GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform. △ Less

Submitted 14 January, 2020; originally announced January 2020.

Probing embedded topological modes in bulk-like GeTe-Sb$_2$Te$_3$ heterostructures

Authors: Hisao Nakamura, Johannes Hofmann, Nobuki Inoue, Sebastian Koelling, Paul M. Koenraad, Gregor Mussler, Detlev Grützmacher, Vijay Narayan

Abstract: The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While these topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intensely, topological states at a solid-solid interface have been less explored. Here we combine experiment and theory to study such \textit{embedded} topolog… ▽ More The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While these topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intensely, topological states at a solid-solid interface have been less explored. Here we combine experiment and theory to study such \textit{embedded} topological states (ETSs) in heterostructures of GeTe (normal insulator) and Sb$_2$Te$_3$ (topological insulator). We analyse their dependence on the interface and their confinement characteristics. To characterise the heterostructures, we evaluate the GeTe-Sb$_2$Te$_3$ band offset using X-ray photoemission spectroscopy, and chart the elemental composition using atom probe tomography. We then use first-principles to independently calculate the band offset and also parametrise the band structure within a four-band continuum model. Our analysis reveals, strikingly, that under realistic conditions, the interfacial topological modes are delocalised over many lattice spacings. Interestingly, the first-principles calculations indicate that the ETSs are relatively robust to disorder and this may have practical ramifications. Our study provides insights into how to manipulate topological modes in heterostructures and also provides a basis for recent experimental findings [Nguyen \textit{et al.}, Sci. Rep. \textbf{6}, 27716 (2016)] where ETSs were seen to couple over large distances. △ Less

Submitted 5 September, 2021; v1 submitted 23 December, 2019; originally announced December 2019.

Journal ref: Sci. Rep. 10, 21806 (2020)

Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires

Authors: P. Zellekens, N. Demarina, J. Janßen, T. Rieger, M. I. Lepsa, P. Perla, G. Panaitov, H. Lüth, D. Grützmacher, T. Schäpers

Abstract: Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--… ▽ More Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--Poisson solver revealed that the ambipolar characteristics originate from a Fermi level dependent occupation of hole and electron states within the approximately circular quantum well formed in the InSb shell. By applying a perpendicular magnetic field with respect to the nanowire axis, conductance fluctuations were observed, which are used to extract the phase-coherence length. By averaging the magneto-conductance traces at different back-gate voltages, weak antilocalization features are resolved. Regular flux-periodic conductance oscillations are measured when an axial magnetic field is applied. These oscillations are attributed to closed-loop quantized states located in the InSb shell which shift their energetic position periodically with the magnetic flux. Possible reasons for experimentally observed variations in the oscillation patterns are discussed using simulation results. △ Less

Submitted 2 April, 2020; v1 submitted 13 November, 2019; originally announced November 2019.

Comments: 19 pages, 9 figures, 1 table, title changed, additional datasets and plots

Journal ref: Semicond. Sci. Technol. (2020)

Thermally activated diffusion and lattice relaxation in (Si)GeSn materials

Authors: Nils von den Driesch, Stephan Wirths, Rene Troitsch, Gregor Mussler, Uwe Breuer, Oussama Moutanabbir, Detlev Grützmacher, Dan Buca

Abstract: Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility with existing Si-based electronics. Yet, their metastability poses significant challenges calling for in-depth investigations of their thermal behavior. With this perspective, this work addresses the interdiffusion proces… ▽ More Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility with existing Si-based electronics. Yet, their metastability poses significant challenges calling for in-depth investigations of their thermal behavior. With this perspective, this work addresses the interdiffusion processes throughout thermal annealing of pseudomorphic GeSn binary and SiGeSn ternary alloys. In both systems, the initially pseudomorphic layers are relaxed upon annealing exclusively via thermally induced diffusional mass transfer of Sn. Systematic post-growth annealing experiments reveal enhanced Sn and Si diffusion regimes that manifest at temperatures below 600°C. The amplified low-temperature diffusion and the observation of only subtle differences between binary and ternary hint at the unique metastability of the Si-Ge-Sn material system as the most important driving force for phase separation. △ Less

Submitted 6 November, 2019; originally announced November 2019.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. Materials 4, 033604 (2020)

Capacitance-voltage measurements of (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ field effect device

Authors: Jimin Wang, Markus Schitko, Gregor Mussler, Detlev Grützmacher, Dieter Weiss

Abstract: Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. Our results show the typical low-frequency and high frequency $\textit{C-V}$ traces,… ▽ More Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. Our results show the typical low-frequency and high frequency $\textit{C-V}$ traces, depending on measuring frequency, temperature and illumination intensity and reflecting their sensitive dependence on recombination/generation rates. Superimposed a strong hysteresis under inversion is also observed which is ascribed to the presence of conventional localized surface states which coexist with topological surface states. △ Less

Submitted 28 July, 2019; originally announced July 2019.

Comments: 18 pages, 5 figures

Journal ref: Phys. Status Solidi B 2019, 256, 1800624

Phase-coherent loops in selectively-grown topological insulator nanoribbons

Authors: Jonas Kölzer, Daniel Rosenbach, Christian Weyrich, Tobias W. Schmitt, Michael Schleenvoigt, Abdur Rehman Jalil, Peter Schüffelgen, Gregor Mussler, Vincent E. Sacksteder IV, Detlev Grützmacher, Hans Lüth, Thomas Schäpers

Abstract: Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused… ▽ More Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused by well-defined and sharply resolved phase-coherent loops. From measurements at different magnetic field tilt angles we deduced that these loops are preferentially oriented parallel to the quintuple layers of the topological insulator material. Both from a theoretical analysis of universal conductance fluctuations and from weak antilocalization measured at low temperature the electronic phase-coherence lengths $l_φ$ are extracted, which is found to be larger in the former case. Possible reasons for this deviation are discussed. △ Less

Submitted 23 July, 2019; originally announced July 2019.

Comments: 7 pages, 6 figure

Long-lived non-equilibrium superconductivity in a non-centrosymmetric Rashba semiconductor

Authors: V. Narayan, P. C. Verpoort, J. R. A. Dann, D. Backes, C. J. B. Ford, M. Lanius, A. R. Jalil, P. Schüffelgen, G. Mussler, G. J. Conduit, D. Grützmacher

Abstract: We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-equilibrium state, which decays on time scales that exceed conventional electronic scattering times by many orders of magnitude. This reveals a non-equilibrium magnetoresponse that is asymmetric under magnetic field rever… ▽ More We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-equilibrium state, which decays on time scales that exceed conventional electronic scattering times by many orders of magnitude. This reveals a non-equilibrium magnetoresponse that is asymmetric under magnetic field reversal and, strikingly, induces a non-equilibrium superconducting state distinct from the equilibrium one. We develop a model of a Rashba system where non-equilibrium configurations relax on a finite timescale which captures the qualitative features of the data. We also obtain evidence for the slow dynamics in another non-superconducting Rashba system. Our work provides novel insights into the dynamics of non-centrosymmetric superconductors and Rashba systems in general. △ Less

Submitted 12 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 100, 024504 (2019)

Thickness dependence of electron-electron interactions in topological p-n junctions

Authors: Dirk Backes, Danhong Huang, Rhodri Mansell, Martin Lanius, Jörn Kampmeier, David Ritchie, Gregor Mussler, Godfrey Gumbs, Detlev Grützmacher, Vijay Narayan

Abstract: Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a find… ▽ More Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers. △ Less

Submitted 12 December, 2018; originally announced December 2018.

Comments: 38 pages, 5 figures, 1 table

Journal ref: Phys. Rev. B 99, 125139 (2019)

Observation of spin Nernst photocurrents in topological insulators

Authors: T. Schumann, N. Meyer, G. Mussler, J. Kampmeier, D. Grützmacher, E. Schmoranzerova, L. Braun, T. Kampfrath, J. Walowski, M. Münzenberg

Abstract: The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state currents, required for spin-optoelectronics. This property makes topological insulators on one hand perfect materials for optically generated, ultrafast spin-bu… ▽ More The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state currents, required for spin-optoelectronics. This property makes topological insulators on one hand perfect materials for optically generated, ultrafast spin-bunches spin-current sources for the generation of THz radiation. On the other hand, those spin-polarized surface-state currents when generated by a voltage lead to large spin Hall effects, or when generated by a temperature gradient to the thermal analogue, the spin Nernst effect. Both mutually convert charge/ heat currents into transverse spin currents leading to spin accumulations. By connecting both research fields, we show the evidence of heat-transport related spin Hall effects that can be extracted from opto-transport experiments. This heat-driven spin Nernst effect drives a transverse spin-current and affects the optical spin-orientation in the three-dimensional topological insulator. This manifests as a modification of the circular polarization-dependent photocurrent. We illuminate the detailed thermocurrent distribution, including the influence of edges and contacts, in spatially resolved current maps. △ Less

Submitted 30 October, 2018; originally announced October 2018.

Comments: 15 pages, 4 figures

Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators

Authors: H. Plank, J. Pernul, S. Gebert, S. N. Danilov, J. König-Otto, S. Winnerl, M. Lanius, J. Kampmeier, G. Mussler, I. Aguilera, D. Grützmacher, S. D. Ganichev

Abstract: We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies th… ▽ More We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies the LPGE emerges due to free carrier Drude-like absorption. The spectra allow to determine the room temperature carrier mobilities in the surface states despite the presents of thermally activate residual impurities in the material bulk. In a number of samples we observed an enhancement of the linear photogalvanic effect at frequencies between 30÷60 THz, which is attributed to the excitation of electrons from helical surface to bulk conduction band states. Under this condition and applying oblique incidence we also observed the circular photogalvanic effect driven by the radiation helicity. △ Less

Submitted 30 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Materials 2, 024202 (2018)

Boosting Transparency in Topological Josephson Junctions via Stencil Lithography

Authors: Peter Schüffelgen, Daniel Rosenbach, Chuan Li, Tobias Schmitt, Michael Schleenvoigt, Abdur R. Jalil, Jonas Kölzer, Meng Wang, Benjamin Bennemann, Umut Parlak, Lidia Kibkalo, Martina Luysberg, Gregor Mussler, Alexander. A. Golubov, Alexander Brinkman, Thomas Schäpers, Detlev Grützmacher

Abstract: Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. H… ▽ More Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. Here, we present an in-situ process, which allows to fabricate such hybrids by combining molecular beam epitaxy and stencil lithography. As-prepared Josephson junctions show nearly perfect interface transparency and very large $I_CR_N$ products. The Shapiro response of radio frequency measurements indicates the presence of gapless Andreev bound states, so-called Majorana bound states. △ Less

Submitted 20 October, 2018; v1 submitted 5 November, 2017; originally announced November 2017.

Comments: An EDX analysis showed a high Sb contribution in the TI thin films. The chip investigated turned out to be a (Bi0.06Sb0.94)2Te3 TI thin film instead of Bi2Te3. However, the main results of our work remain unchanged. The high Sb concentration most importantly changes the position of the Fermi level with respect to the Dirac point. The effect of this shifting is also discussed in the new version

Influence of Te-doping on self-catalyzed VS InAs nanowires

Authors: Nicholas A. Güsken, Torsten Rieger, Gregor Mussler, Mihail Ion Lepsa, Detlev Grützmacher

Abstract: We report on growth of Te-doped self-catalyzed InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zi… ▽ More We report on growth of Te-doped self-catalyzed InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zinc blende) segment ratio if Te is provided during the growth process. Furthermore, electrical two-point measurements show that increased Te-doping causes a gain in conductivity. Two comparable growth series, differing only in As-partial pressure by about $1 \times 10^{-5}$ while keeping all other parameters constant, were analyzed for different Te-doping levels. Their comparison suggests that the crystal structure is stronger affected and the conductivity gain is more distinct for wires grown at a comparably higher As-partial pressure. △ Less

Submitted 27 September, 2017; originally announced September 2017.

MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures

Authors: Nicholas A. Güsken, Torsten Rieger, Benjamin Bennemann, Elmar Neumann, Mihail Ion Lepsa, Thomas Schäpers, Detlev Grützmacher

Abstract: We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest… ▽ More We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest for ongoing research in the fields of gateable Josephson junctions and quantum information related research. Systematic investigations of the deposition parameters suitable for metal shell growth are conducted. In case of Al, the substrate temperature, the growth rate and the shell thickness are considered. The substrate temperature as well as the angle of the impinging deposition flux are explored for Nb shells. The core-shell hybrid structures are characterized by electron microscopy and x-ray spectroscopy. Our results show that the substrate temperature is a crucial parameter in order to enable the deposition of smooth Al layers. Contrary, Nb films are less dependent on substrate temperature but strongly affected by the deposition angle. At a temperature of 200°C Nb reacts with InAs, dissolving the nanowire crystal. Our investigations result in smooth metal shells exhibiting an impurity and defect free, crystalline superconductor/InAs interface. Additionally, we find that the superconductor crystal structure is not affected by stacking faults present in the InAs nanowires. △ Less

Submitted 9 July, 2017; originally announced July 2017.

Comments: 8 pages, 10 figures, 1 table

Electrical resistance of individual defects at a topological insulator surface

Authors: Felix Lüpke, Markus Eschbach, Tristan Heider, Martin Lanius, Peter Schüffelgen, Daniel Rosenbach, Nils von den Driesch, Vasily Cherepanov, Gregor Mussler, Lukasz Plucinski, Detlev Grützmacher, Claus M. Schneider, Bert Voigtländer

Abstract: Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defect… ▽ More Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. The largest localized voltage drop we find to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared to the other defects. △ Less

Submitted 20 April, 2017; originally announced April 2017.

Signatures of interaction-induced helical gaps in nanowire quantum point contacts

Authors: S. Heedt, N. Traverso Ziani, F. Crépin, W. Prost, St. Trellenkamp, J. Schubert, D. Grützmacher, B. Trauzettel, Th. Schäpers

Abstract: Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-dimensional (1D) nanowires subject to strong Rashba SOC and spin-mixing, its hallmark being a characteristic reentrant behaviour in the conductance. Her… ▽ More Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-dimensional (1D) nanowires subject to strong Rashba SOC and spin-mixing, its hallmark being a characteristic reentrant behaviour in the conductance. Here, we report the first direct experimental observations of the reentrant conductance feature, which reveals the formation of a helical liquid, in the lowest 1D subband of an InAs nanowire. Surprisingly, the feature is very prominent also in the absence of magnetic fields. This behaviour suggests that exchange interaction exhibits substantial impact on transport in our device. We attribute the opening of the pseudogap to spin-flipping two-particle backscattering. The all-electric origin of the ideal helical transport bears momentous implications for topological quantum computing. △ Less

Submitted 29 January, 2017; originally announced January 2017.

Comments: submitted to Nature Physics in September 2016

Journal ref: Nat. Phys. 13, 563-567 (2017)