Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon
Authors:
Kevin Janßen,
Philipp Rüßmann,
Sergej Liberda,
Michael Schleenvoigt,
Xiao Hou,
Abdur Rehman Jalil,
Florian Lentz,
Stefan Trellenkamp,
Benjamin Bennemann,
Erik Zimmermann,
Gregor Mussler,
Peter Schüffelgen,
Claus-Michael Schneider,
Stefan Blügel,
Detlev Grützmacher,
Lukasz Plucinski,
Thomas Schäpers
Abstract:
With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricate…
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With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in situ fabricated Nb/$\mathrm{(Bi_{0.15}Sb_{0.85})_2Te_3}$ nano interface. The resulting high interface transparency is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features.
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Submitted 12 December, 2023;
originally announced December 2023.
