Showing 1–50 of 56 results for author: Schäpers, T

Topological insulator based axial superconducting quantum interferometer structures

Authors: Erik Zimmermann, Abdur Rehman Jalil, Michael Schleenvoigt, Jan Karthein, Benedikt Frohn, Gerrit Behner, Florian Lentz, Stefan Trellenkamp, Elmar Neumann, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillati… ▽ More Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillations are explained by interference effects of coherent transport through topological surface states surrounding the cross-section of the nanoribbon. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Comments: 7 pages, 4 figures, supplementary material

Flux-periodic supercurrent oscillations in an Aharonov-Bohm-type nanowire Josephson junction

Authors: Patrick Zellekens, Russell S. Deacon, Farah Basaric, Raghavendra Juluri, Michael D. Randle, Benjamin Bennemann, Christoph Krause, Erik Zimmermann, Ana M. Sanchez, Detlev Grützmacher, Alexander Pawlis, Koji Ishibashi, Thomas Schäpers

Abstract: Phase winding effects in hollow semiconductor nanowires with superconducting shells have been proposed as a route to engineer topological superconducting states. We investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for such devices, where the thin InAs shell confines the electron wave function around the GaAs core. With normal contacts we ob… ▽ More Phase winding effects in hollow semiconductor nanowires with superconducting shells have been proposed as a route to engineer topological superconducting states. We investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for such devices, where the thin InAs shell confines the electron wave function around the GaAs core. With normal contacts we observed pronounced $h/e$ flux periodic oscillations in the magnetoconductance, indicating the presence of a tubular conductive channel in the InAs shell. Conversely, the switching current in Josephson junctions oscillates with approximately half that period, i.e. $h/2e$, indicating transport via Andreev transport processes in the junction enclosing threading magnetic flux. On these structures, we systematically studied the gate-, field-, and temperature-dependent evolution of the supercurrent. Results indicate that Andreev transport processes can occur about the wire circumference indicating full proximitization of the InAs shell from the half-shell superconducting contacts. △ Less

Submitted 21 February, 2024; originally announced February 2024.

Comments: 13 pages, 6 figures

Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon

Authors: Kevin Janßen, Philipp Rüßmann, Sergej Liberda, Michael Schleenvoigt, Xiao Hou, Abdur Rehman Jalil, Florian Lentz, Stefan Trellenkamp, Benjamin Bennemann, Erik Zimmermann, Gregor Mussler, Peter Schüffelgen, Claus-Michael Schneider, Stefan Blügel, Detlev Grützmacher, Lukasz Plucinski, Thomas Schäpers

Abstract: With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricate… ▽ More With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in situ fabricated Nb/$\mathrm{(Bi_{0.15}Sb_{0.85})_2Te_3}$ nano interface. The resulting high interface transparency is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Comments: Main manuscript: 11 pages, 6 figures, Supplementary material: 10 pages, 9 figures

In-plane magnetic field driven conductance modulations in topological insulator kinks

Authors: Gerrit Behner, Kristof Moors, Yong Zhang, Michael Schleenvoigt, Alina Rupp, Erik Zimmermann, Abdur Rehman Jalil, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects the… ▽ More We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects their transmission across the kink. This magnetic field-driven trapping and conductance pattern can be explained with a semiclassical picture and is supported by quantum transport simulations. The interpretation is corroborated by varying the angle of the kink and analyzing the temperature dependence of the observed magnetoconductance pattern, indicating the importance of phase coherence along the cross section perimeter of the kink legs. △ Less

Submitted 1 May, 2024; v1 submitted 10 October, 2023; originally announced October 2023.

Comments: Main Text (7 pages, 4 figures) and Supplemental Material (3 pages, 3 figures)

Journal ref: Phys. Rev. B 109, 155429 (2024)

Induced Superconductivity in Hybrid Au/YBa2Cu3O7-x Electrodes on Vicinal Substrates

Authors: Irina I. Gundareva, Jose Martinez-Castro, F. Stefan Tautz, Detlev Grützmacher, Thomas Schäpers, Matvey Lyatti

Abstract: Superconducting electrodes are an integral part of hybrid Josephson junctions used in many applications including quantum technologies. We report on the fabrication and characterization of superconducting hybrid Au/YBa2Cu3O7-x (YBCO) electrodes on vicinal substrates. In these structures, superconducting CuO2-planes face the gold film, resulting in a higher value and smaller variation of the induce… ▽ More Superconducting electrodes are an integral part of hybrid Josephson junctions used in many applications including quantum technologies. We report on the fabrication and characterization of superconducting hybrid Au/YBa2Cu3O7-x (YBCO) electrodes on vicinal substrates. In these structures, superconducting CuO2-planes face the gold film, resulting in a higher value and smaller variation of the induced energy gap compared to the conventional Au/YBCO electrodes based on films with the c-axis normal to the substrate surface. Using scanning tunneling microscopy, we observe an energy gap of about 10-17 meV at the surface of the 15- nm-thick gold layer deposited in situ atop the YBCO film. To study the origin of this gap, we fabricate nanoconstrictions from the Au/YBCO heterostructure and measure their electrical transport characteristics. The conductance of the nanoconstrictions shows a series of dips due to multiple Andreev reflections in YBCO and gold providing clear evidence of the superconducting nature of the gap in gold. We consider the Au/YBCO electrodes to be a versatile platform for hybrid Josephson devices with a high operating temperature. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Current-induced magnetization switching in a magnetic topological insulator heterostructure

Authors: Erik Zimmermann, Justus Teller, Michael Schleenvoigt, Gerrit Behner, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias current dependence of the coercive field, which is attributed to the effect of the spin-orbit torque provided by the unpolarized bias current. Increasing the bias c… ▽ More We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias current dependence of the coercive field, which is attributed to the effect of the spin-orbit torque provided by the unpolarized bias current. Increasing the bias current leads to a decrease in the magnetic order in the sample. When the applied current is subsequently reduced, the magnetic moments align with an externally applied magnetic field, resulting in repolarization in the opposite direction. This includes a reversal of the spin polarisation and hence a reversal of the chiral edge mode. Possible applications in spintronic devices are discussed. △ Less

Submitted 15 August, 2023; originally announced August 2023.

Comments: 6 pages, 3 figures (5 pages and 5 figures in supplementary information)

Fourier transformation based analysis routine for intermixed longitudinal and transversal hysteretic data for the example of a magnetic topological insulator

Authors: Erik Zimmermann, Michael Schleenvoigt, Alina Rupp, Gerrit Behner, Jan Karthein, Justus Teller, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: We present a symmetrization routine that optimizes and eases the analysis of data featuring the anomalous Hall effect. This technique can be transferred to any hysteresis with (point-)symmetric behaviour. The implementation of the method is demonstrated exemplarily using intermixed longitudinal and transversal data obtained from a chromium-doped ternary topological insulator revealing a clear hyst… ▽ More We present a symmetrization routine that optimizes and eases the analysis of data featuring the anomalous Hall effect. This technique can be transferred to any hysteresis with (point-)symmetric behaviour. The implementation of the method is demonstrated exemplarily using intermixed longitudinal and transversal data obtained from a chromium-doped ternary topological insulator revealing a clear hysteresis. Furthermore, by introducing a mathematical description of the anomalous Hall hysteresis based on the error function precise values of the height and coercive field are determined. △ Less

Submitted 31 July, 2023; originally announced July 2023.

Comments: 6 pages, 6 figures, supplementary information include

Quantum size effects in ultra-thin YBa2Cu3O7-x films

Authors: M. Lyatti, I. Gundareva, T. Röper, Z. Popovic, A. R. Jalil, D. Grützmacher, T. Schäpers

Abstract: The d-wave symmetry of the order parameter with zero energy gap in nodal directions stands in the way of using high-temperature superconductors for quantum applications. We investigate the symmetry of the order parameter in ultra-thin YBa2Cu3O7-x (YBCO) films by measuring the electrical transport properties of nanowires and nanoconstrictions aligned at different angles relative to the main crystal… ▽ More The d-wave symmetry of the order parameter with zero energy gap in nodal directions stands in the way of using high-temperature superconductors for quantum applications. We investigate the symmetry of the order parameter in ultra-thin YBa2Cu3O7-x (YBCO) films by measuring the electrical transport properties of nanowires and nanoconstrictions aligned at different angles relative to the main crystallographic axes. The anisotropy of the nanowire critical current in the nodal and antinodal directions reduces with the decrease in the film thickness. The Andreev reflection spectroscopy shows the presence of a thickness-dependent energy gap that doesn't exist in bulk YBCO. We find that the thickness-dependent energy gap appears due to the quantum size effects in ultra-thin YBCO films that open the superconducting energy gap along the entire Fermi surface. The fully gapped state of the ultra-thin YBCO films makes them a very promising platform for quantum applications, including quantum computing and quantum communications. △ Less

Submitted 23 October, 2023; v1 submitted 7 April, 2023; originally announced April 2023.

Comments: Supplementary Information is updated

Aharonov-Bohm interference and phase-coherent surface-state transport in topological insulator rings

Authors: Gerrit Behner, Abdur Rehman Jalil, Dennis Heffels, Jonas Kölzer, Kristof Moors, Jonas Mertens, Erik Zimmermann, Gregor Mussler, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers

Abstract: We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations… ▽ More We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations originate from ballistic transport along the ring arms. The oscillations can therefore be attributed to topological surface states, which can maintain a quasi-ballistic transport regime in the presence of disorder. Further insight on the phase coherence is gained by comparing with similar Aharonov-Bohm-type oscillations in topological insulator nanoribbons exposed to an axial magnetic field. Here, quasi-ballistic phase-coherent transport is confirmed for closed-loop topological surface states in transverse direction enclosing the cross-section of the nanoribbon. In contrast, the appearance of universal conductance fluctuations indicates phase-coherent transport in the diffuse regime, which is attributed to bulk carrier transport. Thus, it appears that even in the presence of diffusive $p$-type charge carriers in Aharonov-Bohm ring structures, phase-coherent quasi-ballistic transport of topologically protected surface states is maintained over long distances. △ Less

Submitted 3 March, 2023; originally announced March 2023.

Comments: 11 pages (including Supplementary Material), 5 figures, 4 supplementary figures

Ballistic surface channels in fully in situ defined Bi$_4$Te$_3$ Josephson junctions with aluminum contacts

Authors: Daniel Rosenbach, Abdur R. Jalil, Tobias W. Schmitt, Benjamin Bennemann, Gregor Mussler, Peter Schüffelgen, Detlev Grützmacher, Thomas Schäpers

Abstract: In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insulator, for which due to time-reversal and mirror symmetry both a strong topological insulator phase as well as a crystalline topological phase co-exist. The format… ▽ More In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insulator, for which due to time-reversal and mirror symmetry both a strong topological insulator phase as well as a crystalline topological phase co-exist. The formation of a supercurrent through the Bi$_4$Te$_3$ layer is explained by a two-step process. First, due to the close proximity of the Al/Ti electrodes a superconducting gap is induced within the Bi$_4$Te$_3$ layer right below the electrodes. The size of this gap is determined by analysing multiple Andreev reflections (MARs) identified within the devices differential resistance at low voltage biases. Second, based on the Andreev reflection and reverse Andreev reflection processes a supercurrent establishes in the weak link region in between these two proximity coupled regions. Analyses of the temperature dependency of both the critical current as well as MARs indicate mostly ballistic supercurrent contributions in between the proximitized Bi$_4$Te$_3$ regions even though the material is characterized by a semi-metallic bulk phase. The presence of these ballistic modes gives indications on the topological nature of Bi$_4$Te$_3$. △ Less

Submitted 10 January, 2023; originally announced January 2023.

Comments: 21 pages, 4 figures, 2 supplementary figures

Supercurrent in Bi$_4$Te$_3$ Topological Material-Based Three-Terminal Junctions

Authors: Jonas Kölzer, Abdur Rehman Jalil, Daniel Rosenbach, Lisa Arndt, Gregor Mussler, Peter Schüffelgen, Detlev Grützmacher, Hans Lüth, Thomas Schäpers

Abstract: In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of t… ▽ More In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of the junctions is interpreted using a numerical simulation of a similar geometry based on a resistively and capacitively shunted Josephson junction model. The temperature dependency indicates that the device behaves similar to prior experiments with single Josephson junctions comprising topological insulators weak links. Irradiating radio frequencies to the junction we find a spectrum of integer Shapiro steps and an additional fractional step, which is interpreted by a skewed current-phase relationship. In a perpendicular magnetic field we observe Fraunhofer-like interference patterns of the switching currents. △ Less

Submitted 3 January, 2023; originally announced January 2023.

Comments: 8 pages, 7 Figures, includes Supplementary Information, submitted to Nanomaterials

In-plane anisotropy of electrical transport in Y$_{0.85}$Tb$_{0.15}$Ba$_2$Cu$_3$O$_{7-x}$ films

Authors: M. Lyatti, I. Kraiem, T. Röper, I. Gundareva, G. Mussler, D. Grützmacher, T. Schäpers

Abstract: We fabricate high-quality c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-x}$ films with 15% of yttrium atoms replaced by terbium (YTBCO) and study their electrical properties. The Tb substitution reduces the charge carrier density resulting in increased resistivity and decreased critical current density compared to the pure YBa$_2$Cu$_3$O$_{7-x}$ films. The electrical properties of the YTBCO films s… ▽ More We fabricate high-quality c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-x}$ films with 15% of yttrium atoms replaced by terbium (YTBCO) and study their electrical properties. The Tb substitution reduces the charge carrier density resulting in increased resistivity and decreased critical current density compared to the pure YBa$_2$Cu$_3$O$_{7-x}$ films. The electrical properties of the YTBCO films show an in-plane anisotropy in both the superconducting and normal state providing evidence for the twin-free film. Unexpectedly, the resistive transition of the bridges also demonstrates the in-plane anisotropy that can be explained within the framework of Tinkham's model of the resistive transition and the Berezinskii-Kosterlitz-Thouless (BKT) model depending on the sample parameters. We consider YTBCO films to be a promising platform for both the fundamental research on the BKT transition in the cuprate superconductors and for the fabrication of devices with high kinetic inductance. △ Less

Submitted 16 November, 2023; v1 submitted 4 November, 2022; originally announced November 2022.

Comments: XRD data and reference list are updated

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Authors: Patrick Zellekens, Russell Deacon, Pujitha Perla, Detlev Grützmacher, Mihail Ion Lepsa, Thomas Schäpers, Koji Ishibashi

Abstract: Josephson junctions based on semiconductor nanowires are potential building blocks for electrically tunable qubit structures, e.g. the gatemon or the Andreev qubit. However, an actual realization requires the thorough investigation of the intrinsic excitation spectrum. Here, we demonstrate the fabrication of low-loss superconducting microwave circuits that combine high quality factors with a well-… ▽ More Josephson junctions based on semiconductor nanowires are potential building blocks for electrically tunable qubit structures, e.g. the gatemon or the Andreev qubit. However, an actual realization requires the thorough investigation of the intrinsic excitation spectrum. Here, we demonstrate the fabrication of low-loss superconducting microwave circuits that combine high quality factors with a well-controlled gate architecture by utilizing a flip-chip approach. This platform is then used to perform single-tone and two-tone experiments on Andreev states in in-situ grown InAs/Al core/half-shell nanowires with shadow mask defined Josephson junctions. In gate-controlled and flux-biased spectroscopic measurements we find clear signatures of single quasiparticle as well as quasiparticle pair transitions between discrete Andreev bound states mediated by photon-absorption. Our experimental findings are supported by simulations that show that the junction resides in the intermediate channel length regime. △ Less

Submitted 16 December, 2021; originally announced December 2021.

Comments: 11 pages, 6 figures

Te-doped selective-area grown InAs nanowires for superconducting hybrid devices

Authors: Pujitha Perla, Anton Faustmann, Sebastian Koelling, Patrick Zellekens, Russell Deacon, H. Aruni Fonseka, Jonas Kölzer, Yuki Sato, Ana M. Sanchez, Oussama Moutanabbir, Koji Ishibashi, Detlev Grützmacher, Mihail Ion Lepsa, Thomas Schäpers

Abstract: Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were als… ▽ More Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined with atomic probe tomography to obtain information about the local incorporation of Te atoms. It was found that the Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. The efficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, a Josephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed a clear increase of the critical current with increase of the dopant concentration. △ Less

Submitted 18 October, 2021; originally announced October 2021.

Comments: 9 pages, 9 figures

Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons

Authors: Daniel Rosenbach, Kristof Moors, Abdur R. Jalil, Jonas Kölzer, Erik Zimmermann, Jürgen Schubert, Soraya Karimzadah, Gregor Mussler, Peter Schüffelgen, Detlev Grützmacher, Hans Lüth, Thomas Schäpers

Abstract: Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berr… ▽ More Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berry phase offset of $π$ of self-interfering charge carriers an energy gap within the surface state dispersion appears and all states become spin-degenerate. We investigate and compare the magnetic field dependent surface state dispersion in selectively deposited Bi$_2$Te$_3$ TI micro- and nanoribbon structures by analysing the gate voltage dependent magnetoconductance at cryogenic temperatures. While in wide microribbon devices the field effect mainly changes the amount of bulk charges close to the top surface we identify coherent transverse surface states along the perimeter of the nanoribbon devices responding to a change in top gate potential. We quantify the energetic spacing in between these quantized transverse subbands by using an electrostatic model that treats an initial difference in charge carrier densities on the top and bottom surface as well as remaining bulk charges. In the gate voltage dependent transconductance we find oscillations that change their relative phase by $π$ at half-integer values of the magnetic flux quantum applied coaxial to the nanoribbon, which is a signature for a magnetic flux dependent topological phase transition in narrow, selectively deposited TI nanoribbon devices. △ Less

Submitted 8 February, 2022; v1 submitted 7 April, 2021; originally announced April 2021.

Comments: 20 pages, 5 figures

Journal ref: SciPost Physics Core 5, 017 (2022)

In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions

Authors: Jonas Kölzer, Kristof Moors, Abur R. Jalil, Erik Zimmermann, Daniel Rosenbach, Lidia Kibkalo, Peter Schüffelgen, Gregor Mussler, Detlev Grützmacher, Thomas L. Schmidt, Hans Lüth, Thomas Schäpers

Abstract: Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an… ▽ More Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an in-plane magnetic field, the orbital effect cannot be neglected when the surface states are confined to the boundary of a nanoribbon geometry. Here, we report on the magnetotransport properties of such three-terminal junctions. We observe a dependence of the current on the in-plane magnetic field, with a distinct steering pattern of the surface state current towards a preferred output terminal for different magnetic field orientations. We demonstrate that this steering effect originates from the orbital effect, trapping the phase-coherent surface states in the different legs of the junction on opposite sides of the nanoribbon and breaking the left-right symmetry of the transmission across the junction. The reported magnetotransport properties demonstrate that an in-plane magnetic field is not only relevant but also very useful for the characterization and manipulation of transport in three-dimensional topological insulator nanoribbon-based junctions and circuits, acting as a topoelectric current switch. △ Less

Submitted 22 December, 2021; v1 submitted 30 December, 2020; originally announced December 2020.

Comments: Main Text (8 pages, 5 figures) + Supplemental Material (13 pages, 10 figures)

Journal ref: Commun. Mater. 2, 116 (2021)

Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation

Authors: Pujitha Perla, H. Aruni Fonseka, Patrick Zellekens, Russell Deacon, Yisong Han, Jonas Kölzer, Timm Mörstedt, Benjamin Bennemann, Koji Ishibashi, Detlev Grützmacher, Ana M. Sanchez, Mihail Ion Lepsa, Thomas Schäpers

Abstract: Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shad… ▽ More Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shadow evaporation of Nb on pairs of InAs nanowires grown selectively on two adjacent tilted Si (111) facets and crossing each other at a small distance. The upper wire relative to the deposition source acts as a shadow mask determining the gap of the superconducting electrodes on the lower nanowire. Electron microscopy measurements show that the fully in-situ fabrication method gives a clean InAs/Nb interface. A clear Josephson supercurrent is observed in the current-voltage characteristics, which can be controlled by a bottom gate. The excess current of 0.68 indicates a high junction transparency. Under microwave radiation, pronounced integer Shapiro steps are observed suggesting a sinusoidal current-phase relation. Owing to the large critical field of Nb, the Josephson supercurrent can be maintained to magnetic fields exceeding 1 T. Our results show that in-situ prepared Nb/InAs nanowire contacts are very interesting candidates for superconducting quantum circuits requiring large magnetic fields. △ Less

Submitted 12 November, 2020; originally announced November 2020.

Comments: 9 pages, 6 figures, supplementary information

Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices

Authors: Jinzhong Zhang, Pok-Lam Tse, Abdur-Rehman Jalil, Jonas Kölzer, Daniel Rosenbach, Martina Luysberg, Gregory Panaitov, Hans Lüth, Zhigao Hu, Detlev Grützmacher, Jia Grace Lu, Thomas Schäpers

Abstract: Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determine… ▽ More Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determined for the hole carriers. The distinct phase-coherence is confirmed by the observation of Aharonov--Bohm type oscillations for magnetic fields applied along the nanowire axis. We interpret the occurrence of these magnetic flux-periodic oscillations by the formation of a tubular hole accumulation layer on the nanowire surface. In addition, for Nb/GeTe-nanowire/Nb Josephson junctions, we obtained a proximity-induced critical current of about 0.2$μ$A at 0.4K. By applying a magnetic field perpendicular to the nanowire axis, the critical current decreases monotonously with increasing magnetic field, which indicates that the structure is in the small-junction-limit. Whereas, by applying a parallel magnetic field the critical current oscillates with a period of the magnetic flux quantum indicating once again the presence of a tubular hole channel. △ Less

Submitted 15 September, 2020; originally announced September 2020.

Comments: 9 pages, 4 figures

Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction

Authors: Patrick Zellekens, Russell Deacon, Pujitha Perla, H. Aruni Fonseka, Timm Moerstedt, Steven A. Hindmarsh, Benjamin Bennemann, Florian Lentz, Mihail Ion Lepsa, Ana M. Sanchez, Detlev Grützmacher, Koji Ishibashi, Thomas Schäpers

Abstract: Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be… ▽ More Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be precisely controlled. We fabricated self-defined InAs/Al core/shell nanowire junctions by a fully in-situ approach, which meet all these criteria. Transmission electron microscopy measurements confirm the sharp and clean interface between the nanowire and the in-situ deposited Al electrodes which were formed by means of shadow evaporation. Furthermore, we report on tunnel spectroscopy, gate and magnetic field-dependent transport measurements. The achievable short junction lengths,the observed hard-gap and the magnetic field robustness make this new hybrid structure very attractive for applications which rely on a precise control of the number of sub-gap states, like Andreev qubits or topological systems. △ Less

Submitted 29 July, 2020; v1 submitted 21 April, 2020; originally announced April 2020.

Comments: 9 pages, 6 figures. Inclusion of additional TEM and EDX data

Journal ref: Phys. Rev. Applied 14, 054019 (2020)

Quantum transport in topological surface states of Bi$_2$Te$_3$ nanoribbons

Authors: Daniel Rosenbach, Nico Oellers, Abdur Rehman Jalil, Martin Mikulics, Jonas Kölzer, Erik Zimmermann, Gregor Mussler, Stephany Bunte, Detlev Grützmacher, Hans Lüth, Thomas Schäpers

Abstract: Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi$_2$Te$_3$ topological insulator nanoribbo… ▽ More Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi$_2$Te$_3$ topological insulator nanoribbons and nano Hall bars at cryogenic temperatures for their topological properties. The Hall bars are defined in deep-etched Si$_3$N$_4$/SiO$_2$ nano-trenches on a silicon (111) substrate followed by a selective area growth process via molecular beam epitaxy. The selective area growth is beneficial to the device quality, as no subsequent fabrication needs to be performed to shape the nanoribbons. Transmission line measurements are performed to evaluate contact resistances of Ti/Au contacts applied as well as the specific resistance of the Bi$_2$Te$_3$ binary topological insulator. In the diffusive transport regime of these unintentionally $n$-doped Bi$_2$Te$_3$ topological insulator nano Hall bars, we identify distinguishable electron trajectories by analyzing angle-dependent universal conductance fluctuation spectra. When the sample is tilted from a perpendicular to a parallel magnetic field orientation, these high frequent universal conductance fluctuations merge with low frequent Aharonov-Bohm type oscillations originating from the topologically protected surface states encircling the nanoribbon cross section. For 500 nm wide Hall bars we also identify low frequent Shubnikov-de Haas oscillations in the perpendicular field orientation, that reveal a topological high-mobility 2D transport channel, partially decoupled from the bulk of the material. △ Less

Submitted 24 January, 2020; originally announced January 2020.

Comments: 13 pages, 5 figures, 6 pages supplementary information, 5 supplementary figures

Report number: aelm.202000205

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

Authors: Felix Jekat, Benjamin Pestka, Diana Car, Saša Gazibegović, Kilian Flöhr, Sebastian Heedt, Jürgen Schubert, Marcus Liebmann, Erik P. A. M. Bakkers, Thomas Schäpers, Markus Morgenstern

Abstract: We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to… ▽ More We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems. △ Less

Submitted 22 June, 2020; v1 submitted 23 January, 2020; originally announced January 2020.

Journal ref: Appl. Phys. Lett. 116, 253101 (2020)

Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires

Authors: P. Zellekens, N. Demarina, J. Janßen, T. Rieger, M. I. Lepsa, P. Perla, G. Panaitov, H. Lüth, D. Grützmacher, T. Schäpers

Abstract: Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--… ▽ More Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--Poisson solver revealed that the ambipolar characteristics originate from a Fermi level dependent occupation of hole and electron states within the approximately circular quantum well formed in the InSb shell. By applying a perpendicular magnetic field with respect to the nanowire axis, conductance fluctuations were observed, which are used to extract the phase-coherence length. By averaging the magneto-conductance traces at different back-gate voltages, weak antilocalization features are resolved. Regular flux-periodic conductance oscillations are measured when an axial magnetic field is applied. These oscillations are attributed to closed-loop quantized states located in the InSb shell which shift their energetic position periodically with the magnetic flux. Possible reasons for experimentally observed variations in the oscillation patterns are discussed using simulation results. △ Less

Submitted 2 April, 2020; v1 submitted 13 November, 2019; originally announced November 2019.

Comments: 19 pages, 9 figures, 1 table, title changed, additional datasets and plots

Journal ref: Semicond. Sci. Technol. (2020)

Phase-coherent loops in selectively-grown topological insulator nanoribbons

Authors: Jonas Kölzer, Daniel Rosenbach, Christian Weyrich, Tobias W. Schmitt, Michael Schleenvoigt, Abdur Rehman Jalil, Peter Schüffelgen, Gregor Mussler, Vincent E. Sacksteder IV, Detlev Grützmacher, Hans Lüth, Thomas Schäpers

Abstract: Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused… ▽ More Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused by well-defined and sharply resolved phase-coherent loops. From measurements at different magnetic field tilt angles we deduced that these loops are preferentially oriented parallel to the quintuple layers of the topological insulator material. Both from a theoretical analysis of universal conductance fluctuations and from weak antilocalization measured at low temperature the electronic phase-coherence lengths $l_φ$ are extracted, which is found to be larger in the former case. Possible reasons for this deviation are discussed. △ Less

Submitted 23 July, 2019; originally announced July 2019.

Comments: 7 pages, 6 figure

Dresselhaus spin-orbit coupling in [111]-oriented semiconductor nanowires

Authors: Andreas Bringer, Sebastian Heedt, Thomas Schäpers

Abstract: The contribution of bulk inversion asymmetry to the total spin-orbit coupling is commonly neglected for group III-V nanowires grown in the generic [111] direction. We have solved the complete Hamiltonian of the circular nanowire accounting for bulk inversion asymmetry via exact numerical diagonalization. Three different symmetry classes of angular momentum states exist, which reflects the threefol… ▽ More The contribution of bulk inversion asymmetry to the total spin-orbit coupling is commonly neglected for group III-V nanowires grown in the generic [111] direction. We have solved the complete Hamiltonian of the circular nanowire accounting for bulk inversion asymmetry via exact numerical diagonalization. Three different symmetry classes of angular momentum states exist, which reflects the threefold rotation symmetry of the crystal lattice about the [111] axis. A particular group of angular momentum states contains degenerate modes which are strongly coupled via the Dresselhaus Hamiltonian, which results in a significant energy splitting with increasing momentum. Hence, under certain conditions Dresselhaus spin-orbit coupling is relevant for [111] InAs and [111] InSb nanowires. We demonstrate momentum-dependent energy splittings and the impact of Dresselhaus spin-orbit coupling on the dispersion relation. In view of possible spintronics applications relying on bulk inversion asymmetry we calculate the spin expectation values and the spin texture as a function of the Fermi energy. Finally, we investigate the effect of an axial magnetic field on the energy spectrum and on the corresponding spin polarization. △ Less

Submitted 25 February, 2019; v1 submitted 2 January, 2019; originally announced January 2019.

Comments: 11 Pages, 7 figures

Journal ref: Phys. Rev. B 99, 085437 (2019)

Magnetotransport signatures of three-dimensional topological insulator nanostructures

Authors: Kristof Moors, Peter Schüffelgen, Daniel Rosenbach, Tobias Schmitt, Thomas Schäpers, Thomas L. Schmidt

Abstract: We study the magnetotransport properties of patterned 3D topological insulator nanostructures with several leads, such as kinks or Y-junctions, near the Dirac point with analytical as well as numerical techniques. The interplay of the nanostructure geometry, the external magnetic field and the spin-momentum locking of the topological surface states lead to a richer magnetoconductance phenomenology… ▽ More We study the magnetotransport properties of patterned 3D topological insulator nanostructures with several leads, such as kinks or Y-junctions, near the Dirac point with analytical as well as numerical techniques. The interplay of the nanostructure geometry, the external magnetic field and the spin-momentum locking of the topological surface states lead to a richer magnetoconductance phenomenology as compared to straight nanowires. Similar to straight wires, a quantized conductance with perfect transmission across the nanostructure can be realized across a kink when the input and output channels are pierced by a half-integer magnetic flux quantum. Unlike for straight wires, there is an additional requirement depending on the orientation of the external magnetic field. A right-angle kink shows a unique $π$-periodic magnetoconductance signature as a function of the in-plane angle of the magnetic field. For a Y-junction, the transmission can be perfectly steered to either of the two possible output legs by a proper alignment of the external magnetic field. These magnetotransport signatures offer new ways to explore topological surface states and could be relevant for quantum transport experiments on nanostructures which can be realized with existing fabrication methods. △ Less

Submitted 9 March, 2021; v1 submitted 28 January, 2018; originally announced January 2018.

Comments: 12 pages, 8 figures, including corrections in accordance with Erratum Phys. Rev. B 103, 079902 (2021)

Journal ref: Phys. Rev. B 97, 245429 (2018)

Boosting Transparency in Topological Josephson Junctions via Stencil Lithography

Authors: Peter Schüffelgen, Daniel Rosenbach, Chuan Li, Tobias Schmitt, Michael Schleenvoigt, Abdur R. Jalil, Jonas Kölzer, Meng Wang, Benjamin Bennemann, Umut Parlak, Lidia Kibkalo, Martina Luysberg, Gregor Mussler, Alexander. A. Golubov, Alexander Brinkman, Thomas Schäpers, Detlev Grützmacher

Abstract: Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. H… ▽ More Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. Here, we present an in-situ process, which allows to fabricate such hybrids by combining molecular beam epitaxy and stencil lithography. As-prepared Josephson junctions show nearly perfect interface transparency and very large $I_CR_N$ products. The Shapiro response of radio frequency measurements indicates the presence of gapless Andreev bound states, so-called Majorana bound states. △ Less

Submitted 20 October, 2018; v1 submitted 5 November, 2017; originally announced November 2017.

Comments: An EDX analysis showed a high Sb contribution in the TI thin films. The chip investigated turned out to be a (Bi0.06Sb0.94)2Te3 TI thin film instead of Bi2Te3. However, the main results of our work remain unchanged. The high Sb concentration most importantly changes the position of the Fermi level with respect to the Dirac point. The effect of this shifting is also discussed in the new version

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

Authors: Michael Kammermeier, Paul Wenk, John Schliemann, Sebastian Heedt, Thomas Gerster, Thomas Schäpers

Abstract: We study the effects of spin-orbit coupling on the magnetoconductivity in diffusive cylindrical semiconductor nanowires. Following up on our former study on tubular semiconductor nanowires, we focus in this paper on nanowire systems where no surface accumulation layer is formed but instead the electron wave function extends over the entire cross section. We take into account the Dresselhaus spin-o… ▽ More We study the effects of spin-orbit coupling on the magnetoconductivity in diffusive cylindrical semiconductor nanowires. Following up on our former study on tubular semiconductor nanowires, we focus in this paper on nanowire systems where no surface accumulation layer is formed but instead the electron wave function extends over the entire cross section. We take into account the Dresselhaus spin-orbit coupling resulting from a zinc-blende lattice and the Rashba spin-orbit coupling, which is controlled by a lateral gate electrode. The spin relaxation rate due to Dresselhaus spin-orbit coupling is found to depend neither on the spin density component nor on the wire growth direction and is unaffected by the radial boundary. In contrast, the Rashba spin relaxation rate is strongly reduced for a wire radius that is smaller than the spin precession length. The derived model is fitted to the data of magnetoconductance measurements of a heavily doped back-gated InAs nanowire and transport parameters are extracted. At last, we compare our results to previous theoretical and experimental studies and discuss the occurring discrepancies. △ Less

Submitted 1 December, 2017; v1 submitted 8 September, 2017; originally announced September 2017.

Comments: 11 pages, 5 figures, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 96, 235302 (2017)

MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures

Authors: Nicholas A. Güsken, Torsten Rieger, Benjamin Bennemann, Elmar Neumann, Mihail Ion Lepsa, Thomas Schäpers, Detlev Grützmacher

Abstract: We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest… ▽ More We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest for ongoing research in the fields of gateable Josephson junctions and quantum information related research. Systematic investigations of the deposition parameters suitable for metal shell growth are conducted. In case of Al, the substrate temperature, the growth rate and the shell thickness are considered. The substrate temperature as well as the angle of the impinging deposition flux are explored for Nb shells. The core-shell hybrid structures are characterized by electron microscopy and x-ray spectroscopy. Our results show that the substrate temperature is a crucial parameter in order to enable the deposition of smooth Al layers. Contrary, Nb films are less dependent on substrate temperature but strongly affected by the deposition angle. At a temperature of 200°C Nb reacts with InAs, dissolving the nanowire crystal. Our investigations result in smooth metal shells exhibiting an impurity and defect free, crystalline superconductor/InAs interface. Additionally, we find that the superconductor crystal structure is not affected by stacking faults present in the InAs nanowires. △ Less

Submitted 9 July, 2017; originally announced July 2017.

Comments: 8 pages, 10 figures, 1 table

Experimental determination of Rashba and Dresselhaus parameters and $g^*$-factor anisotropy via Shubnikov-de Haas oscillations

Authors: F. Herzog, H. Hardtdegen, Th. Schaepers, D. Grundler, M. A. Wilde

Abstract: The spin splitting of conduction band electrons in inversion-asymmetric InGaAs/InP quantum wells is studied by Shubnikov-de Haas measurements combining the analysis of beating patterns and coincidence measurements in doubly tilted magnetic fields. The method allows us to determine the absolute values of the Rashba and linear Dresselhaus spin-orbit interaction coefficients, their relative sign and… ▽ More The spin splitting of conduction band electrons in inversion-asymmetric InGaAs/InP quantum wells is studied by Shubnikov-de Haas measurements combining the analysis of beating patterns and coincidence measurements in doubly tilted magnetic fields. The method allows us to determine the absolute values of the Rashba and linear Dresselhaus spin-orbit interaction coefficients, their relative sign and the full Landé g-tensor. This is achieved by analyzing the anisotropy of the beat node positions with respect to both polar and azimuthal angles between the magnetic field direction and the quantum well normal. We show that the spin-orbit interaction is dominated by a large Rashba coefficient together with a linear Dresselhaus coefficient that is 10 $\%$ of the Rashba coefficient. Their relative sign is found to be positive. The g-tensor is found to have a marked out-of-plane anisotropy and a smaller but distinct in-plane anisotropy due to spin-orbit interaction. △ Less

Submitted 21 March, 2017; originally announced March 2017.

Signatures of interaction-induced helical gaps in nanowire quantum point contacts

Authors: S. Heedt, N. Traverso Ziani, F. Crépin, W. Prost, St. Trellenkamp, J. Schubert, D. Grützmacher, B. Trauzettel, Th. Schäpers

Abstract: Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-dimensional (1D) nanowires subject to strong Rashba SOC and spin-mixing, its hallmark being a characteristic reentrant behaviour in the conductance. Her… ▽ More Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-dimensional (1D) nanowires subject to strong Rashba SOC and spin-mixing, its hallmark being a characteristic reentrant behaviour in the conductance. Here, we report the first direct experimental observations of the reentrant conductance feature, which reveals the formation of a helical liquid, in the lowest 1D subband of an InAs nanowire. Surprisingly, the feature is very prominent also in the absence of magnetic fields. This behaviour suggests that exchange interaction exhibits substantial impact on transport in our device. We attribute the opening of the pseudogap to spin-flipping two-particle backscattering. The all-electric origin of the ideal helical transport bears momentous implications for topological quantum computing. △ Less

Submitted 29 January, 2017; originally announced January 2017.

Comments: submitted to Nature Physics in September 2016

Journal ref: Nat. Phys. 13, 563-567 (2017)

Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

Authors: Michael Kammermeier, Paul Wenk, John Schliemann, Sebastian Heedt, Thomas Schäpers

Abstract: We compute analytically the weak (anti)localization correction to the Drude conductivity for electrons in tubular semiconductor systems of zinc blende type. We include linear Rashba and Dresselhaus spin-orbit coupling (SOC) and compare wires of standard growth directions $\langle100\rangle$, $\langle111\rangle$, and $\langle110\rangle$. The motion on the quasi-two-dimensional surface is considered… ▽ More We compute analytically the weak (anti)localization correction to the Drude conductivity for electrons in tubular semiconductor systems of zinc blende type. We include linear Rashba and Dresselhaus spin-orbit coupling (SOC) and compare wires of standard growth directions $\langle100\rangle$, $\langle111\rangle$, and $\langle110\rangle$. The motion on the quasi-two-dimensional surface is considered diffusive in both directions: transversal as well as along the cylinder axis. It is shown that Dresselhaus and Rashba SOC similarly affect the spin relaxation rates. For the $\langle110\rangle$ growth direction, the long-lived spin states are of helical nature. We detect a crossover from weak localization to weak anti-localization depending on spin-orbit coupling strength as well as dephasing and scattering rate. The theory is fitted to experimental data of an undoped $\langle111\rangle$ InAs nanowire device which exhibits a top-gate-controlled crossover from positive to negative magnetoconductivity. Thereby, we extract transport parameters where we quantify the distinct types of SOC individually. △ Less

Submitted 8 December, 2016; v1 submitted 8 March, 2016; originally announced March 2016.

Comments: 17 pages, 9 figures

Journal ref: Phys. Rev. B 93, 205306 (2016)

Impact of tunnel barrier strength on magnetoresistance in carbon nanotubes

Authors: Caitlin Morgan, Maciej Misiorny, Dominik Metten, Sebastian Heedt, Thomas Schäpers, Claus M. Schneider, Carola Meyer

Abstract: We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both temperature and bias voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the… ▽ More We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both temperature and bias voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a non-trivial dependence of the magnetoresistance on the barrier strength. Furthermore, analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of $τ_s = 1.1\,$ns, a value comparable with those found in silicon- or graphene-based spin valve devices. △ Less

Submitted 20 April, 2016; v1 submitted 10 November, 2015; originally announced November 2015.

Comments: 10 pages, 5 figures, 1 table

Journal ref: Phys. Rev. Applied 5, 054010 (2016)

Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers

Authors: C. Weyrich, M. Drögeler, J. Kampmeier, M. Eschbach, G. Mussler, T. Merzenich, T. Stoica, I. E. Batov, J. Schubert, L. Plucinski, B. Beschoten, C. M. Schneider, C. Stampfer, D. Grützmacher, Th. Schäpers

Abstract: Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the… ▽ More Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states. △ Less

Submitted 18 October, 2016; v1 submitted 3 November, 2015; originally announced November 2015.

Comments: 11 pages, 10 figures, published in Journal of Physics: Condensed Matter

Journal ref: Journal of Physics: Condensed Matter, Volume 28, Number 49 (2016)

Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures

Authors: Markus Eschbach, Ewa Mlynczak, Jens Kellner, Jörn Kampmeier, Martin Lanius, Elmar Neumann, Christian Weyrich, Mathias Gehlmann, Pika Gospodaric, Sven Döring, Gregor Mussler, Nataliya Demarina, Martina Luysberg, Gustav Bihlmayer, Thomas Schäpers, Lukasz Plucinski, Stefan Blügel, Markus Morgenstern, Claus M. Schneider, Detlev Grützmacher

Abstract: 3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct… ▽ More 3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and $\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper $\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way of exploring other exotic quantum phenomena in the near future. △ Less

Submitted 9 October, 2015; originally announced October 2015.

Comments: 5 Figures; including supplementary information

Correlations of mutual positions of charge density waves nodes in side-by-side placed InAs wires measured with scanning gate microscopy

Authors: A. A. Zhukov, Ch. Volk, A. Winden, H. Hardtdegen, Th. Schaepers

Abstract: We investigate the correlations of mutual positions of charge density waves nodes in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and "crysta… ▽ More We investigate the correlations of mutual positions of charge density waves nodes in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and "crystal lattice mismatch" defect were observed. These observations demonstrate the crucial role of Coulomb interaction in formation of charge density waves in InAs nanowires. △ Less

Submitted 24 April, 2015; originally announced April 2015.

Journal ref: Pis'ma v ZhETP, vol. 101, issue 9, page 703 (2015)

Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at helium temperatures

Authors: A. A. Zhukov, Ch. Volk, A. Winden, H. Hardtdegen, Th. Schaepers

Abstract: In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of co… ▽ More In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves. △ Less

Submitted 30 May, 2014; originally announced May 2014.

Comments: 7 pages, 4 figures. arXiv admin note: text overlap with arXiv:1309.3253

The electronic transport of top subband and disordered sea in InAs nanowire in presence of a mobile gate

Authors: A. A. Zhukov, Ch. Volk, A. Winden, H. Hardtdegen, Th. Schaepers

Abstract: We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire ($R_{wire} \sim 30$\,k$Ω$) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the amplitude of the observed quasiperiodic oscillations are investigated in detail as a function of electron concentration in the linear and non-linear regime. We demo… ▽ More We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire ($R_{wire} \sim 30$\,k$Ω$) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the amplitude of the observed quasiperiodic oscillations are investigated in detail as a function of electron concentration in the linear and non-linear regime. We demonstrate the influence of the tip-to-sample distance on the ability to locally affect the top subband electrons as well as the electrons in the disordered sea. Furthermore, we introduce a new method of detection of the subband occupation in an InAs wire, which allows us to evaluate the number of the electrons in the conductive band of the wire. △ Less

Submitted 14 September, 2013; v1 submitted 10 September, 2013; originally announced September 2013.

Scanning tunneling microscopy with InAs nanowire tips

Authors: Kilian Flöhr, Kamil Sladek, H. Yusuf Günel, Mihail Ion Lepsa, Hilde Hardtdegen, Marcus Liebmann, Thomas Schäpers, Markus Morgenstern

Abstract: Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM image… ▽ More Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging. △ Less

Submitted 20 December, 2012; originally announced December 2012.

Journal ref: Appl. Phys. Lett. 101, 243101 (2012)

Supercurrent in Nb/InAs-Nanowire/Nb Josephson junctions

Authors: H. Y. Gunel, I. E. Batov, H. Hardtdegen, K. Sladek, A. Winden, K. Weis, G. Panaitov, D. Gruetzmacher, Th. Schaepers

Abstract: We report on the fabrication and measurements of planar mesoscopic Josephson junctions formed by InAs nanowires coupled to superconducting Nb terminals. The use of Si-doped InAs-nanowires with different bulk carrier concentrations allowed to tune the properties of the junctions. We have studied the junction characteristics as a function of temperature, gate voltage, and magnetic field. In junction… ▽ More We report on the fabrication and measurements of planar mesoscopic Josephson junctions formed by InAs nanowires coupled to superconducting Nb terminals. The use of Si-doped InAs-nanowires with different bulk carrier concentrations allowed to tune the properties of the junctions. We have studied the junction characteristics as a function of temperature, gate voltage, and magnetic field. In junctions with high doping concentrations in the nanowire Josephson supercurrent values up to 100\,nA are found. Owing to the use of Nb as superconductor the Josephson coupling persists at temperatures up to 4K. In all junctions the critical current monotonously decreased with the magnetic field, which can be explained by a recently developed theoretical model for the proximity effect in ultra-small Josephson junctions. For the low-doped Josephson junctions a control of the critical current by varying the gate voltage has been demonstrated. We have studied conductance fluctuations in nanowires coupled to superconducting and normal metal terminals. The conductance fluctuation amplitude is found to be about 6 times larger in superconducting contacted nanowires. The enhancement of the conductance fluctuations is attributed to phase-coherent Andreev reflection as well as to the large number of phase-coherent channels due to the large superconducting gap of the Nb electrodes. △ Less

Submitted 10 May, 2012; originally announced May 2012.

Comments: 5 Figure, submitted to Journal of Applied Physics

Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect

Authors: A. Bringer, Th. Schäpers

Abstract: The spin precession in a cylindrical semiconductor nanowire due to Rashba spin-orbit coupling has been investigated theoretically using an InAs nanowire containing a surface two-dimensional electron gas as a model. The eigenstates, energy-momentum dispersion, and the energy-magnetic field dispersion relation are determined by solving the Schrödinger equation in a cylindrical symmetry The combinati… ▽ More The spin precession in a cylindrical semiconductor nanowire due to Rashba spin-orbit coupling has been investigated theoretically using an InAs nanowire containing a surface two-dimensional electron gas as a model. The eigenstates, energy-momentum dispersion, and the energy-magnetic field dispersion relation are determined by solving the Schrödinger equation in a cylindrical symmetry The combination of states with the same total angular momentum but opposite spin orientation results in a periodic modulation of the axial spin component along the axis of the wire. Spin-precession about the wires axis is achieved by interference of two states with different total angular momentum. Because a superposition state with exact opposite spin precession exists at zero magnetic field, an oscillation of the spin orientation can be obtained. If an axially oriented magnetic field is applied, the spin gains an additional precessing component. △ Less

Submitted 14 January, 2011; v1 submitted 20 November, 2010; originally announced November 2010.

Comments: 7 pages, 7 pictures, accepted Physical Review B

Spin-orbit coupling and phase-coherence in InAs nanowires

Authors: S. Estévez Hernández, M. Akabori, K. Sladek, Ch. Volk, S. Alagha, H. Hardtdegen, N. Demarina, D. Grützmacher, Th. Schäpers, M. G. Pala

Abstract: We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation of the magnetic field or the back-gate voltage are observed, which are attributed to electron interference effects in small disordered conductors. From the correlation field of the… ▽ More We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation of the magnetic field or the back-gate voltage are observed, which are attributed to electron interference effects in small disordered conductors. From the correlation field of the magnetoconductance fluctuations the phase-coherence length l_phi is determined. At the lowest temperatures l_phi is found to be at least 300 nm, while for temperatures exceeding 2 K a monotonous decrease of l_phi with temperature is observed. A direct observation of the weak antilocalization effect indicating the presence of spin-orbit coupling is masked by the strong magnetoconductance fluctuations. However, by averaging the magnetoconductance over a range of gate voltages a clear peak in the magnetoconductance due to the weak antilocalization effect was resolved. By comparison of the experimental data to simulations based on a recursive two-dimensional Green's function approach a spin-orbit scattering length of approximately 70 nm was extracted, indicating the presence of strong spin-orbit coupling. △ Less

Submitted 6 November, 2010; originally announced November 2010.

Comments: 8 pages, 7 figures

Two-dimensional optical control of electron spin orientation by linearly polarized light in InGaAs

Authors: K. Schmalbuch, S. Göbbels, Ph. Schäfers, Ch. Rodenbücher, P. Schlammes, Th. Schäpers, M. Lepsa, G. Güntherodt, B. Beschoten

Abstract: Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InGaAs. By changing the incident linear polarization direction we can selectively excite spins both in polar and transverse directions. Thes… ▽ More Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InGaAs. By changing the incident linear polarization direction we can selectively excite spins both in polar and transverse directions. These directions can be identified by the phase during spin precession using time-resolved Faraday rotation. We show that the spin orientations do not depend on the crystal axes suggesting an extrinsic excitation mechanism. △ Less

Submitted 1 August, 2010; originally announced August 2010.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 105, 246603 (2010)

Josephson supercurrent in Nb/InN-nanowire/Nb junctions

Authors: R. Frielinghaus, I. E. Batov, M. Weides, H. Kohlstedt, R. Calarco, Th. Schaepers

Abstract: We experimentally studied the Josephson supercurrent in Nb/InN-nanowire/Nb junctions. Large critical currents up to 5.7 $μ$A have been achieved, which proves the good coupling of the nanowire to the superconductor. The effect of a magnetic field perpendicular to the plane of the Josephson junction on the critical current has been studied. The observed monotonous decrease of the critical current… ▽ More We experimentally studied the Josephson supercurrent in Nb/InN-nanowire/Nb junctions. Large critical currents up to 5.7 $μ$A have been achieved, which proves the good coupling of the nanowire to the superconductor. The effect of a magnetic field perpendicular to the plane of the Josephson junction on the critical current has been studied. The observed monotonous decrease of the critical current with magnetic field is explained by the magnetic pair-breaking effect in planar Josephson junctions of ultra-narrow width [J. C. Cuevas and F. S. Bergeret, Phys. Rev. Lett. 99, 217002 (2007)] △ Less

Submitted 14 January, 2010; originally announced January 2010.

Comments: 4 pages, 3 figures

Temperature-dependence of the phase-coherence length in InN nanowires

Authors: Ch. Blomers, Th. Schapers, T. Richter, R. Calarco, H. Luth, M. Marso

Abstract: We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root-mean-square and the correlation field of the conductance fluctuations at various temperatures the phase-coherence lengt… ▽ More We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root-mean-square and the correlation field of the conductance fluctuations at various temperatures the phase-coherence length was determined. △ Less

Submitted 28 February, 2008; originally announced February 2008.

Comments: 4 pages, 4 figures

Phase-coherent transport in InN nanowires of various sizes

Authors: C. Blomers, Th. Schapers, T. Richter, R. Calarco, H. Luth, M. Marso

Abstract: We investigate phase-coherent transport in InN nanowires of various diameters and lengths. The nanowires were grown by means of plasma-assisted molecular beam epitaxy. Information on the phase-coherent transport is gained by analyzing the characteristic fluctuation pattern in the magneto-conductance. For a magnetic field oriented parallel to the wire axis we found that the correlation field main… ▽ More We investigate phase-coherent transport in InN nanowires of various diameters and lengths. The nanowires were grown by means of plasma-assisted molecular beam epitaxy. Information on the phase-coherent transport is gained by analyzing the characteristic fluctuation pattern in the magneto-conductance. For a magnetic field oriented parallel to the wire axis we found that the correlation field mainly depends on the wire cross section, while the fluctuation amplitude is governed by the wire length. In contrast, if the magnetic field is oriented perpendicularly, for wires longer than approximately 200 nm the correlation field is limited by the phase coherence length. Further insight into the orientation dependence of the correlation field is gained by measuring the conductance fluctuations at various tilt angles of the magnetic field. △ Less

Submitted 27 February, 2008; originally announced February 2008.

Comments: 5 pages, 5 figures

Weak antilocalization in high mobility Ga(x)In(1-x)As/InP two-dimensional electron gases with strong spin-orbit coupling

Authors: Vitaliy A. Guzenko, Thomas Schäpers, Hilde Hardtdegen

Abstract: We have studied the spin-orbit interaction in a high mobility two-dimensional electron gas in a GaInAs/InP heterostructure as a function of an applied gate voltage as well as a function of temperature. Highly sensitive magnetotransport measurements of weak antilocalization as well as measurements of Shubnikov--de Haas oscillations were performed in a wide range of electron sheet concentrations.… ▽ More We have studied the spin-orbit interaction in a high mobility two-dimensional electron gas in a GaInAs/InP heterostructure as a function of an applied gate voltage as well as a function of temperature. Highly sensitive magnetotransport measurements of weak antilocalization as well as measurements of Shubnikov--de Haas oscillations were performed in a wide range of electron sheet concentrations. In our samples the electron transport takes place in the strong spin precession regime in the whole range of applied gate voltages, which is characterized by the spin precession length being shorter than the elastic mean free path. The magnitude of the Rashba spin-orbit coupling parameter was determined by fitting the experimental curves by a simulated quantum conductance correction according to a model proposed recently by Golub [Phys. Rev. B 71, 235310 (2005)]. A comparison of the Rashba coupling parameter extracted using this model with the values estimated from the analysis of the beating pattern in the Shubnikov--de Haas oscillations showed a good agreement. △ Less

Submitted 10 September, 2007; originally announced September 2007.

Comments: 5 pages, 5 figures, accepted for publication in Phys.Rev.B

Enhanced spin-orbit scattering length in narrow Al_xGa_{1-x}N/GaN wires

Authors: P. Lehnen, Th. Schapers, N. Kaluza, N. Thillosen, H. Hardtdegen

Abstract: The magnetotransport in a set of identical parallel AlGaN/GaN quantum wire structures was investigated. The width of the wires was ranging between 1110 nm and 340 nm. For all sets of wires clear Shubnikov--de Haas oscillations are observed. We find that the electron concentration and mobility is approximately the same for all wires, confirming that the electron gas in the AlGaN/GaN heterostructu… ▽ More The magnetotransport in a set of identical parallel AlGaN/GaN quantum wire structures was investigated. The width of the wires was ranging between 1110 nm and 340 nm. For all sets of wires clear Shubnikov--de Haas oscillations are observed. We find that the electron concentration and mobility is approximately the same for all wires, confirming that the electron gas in the AlGaN/GaN heterostructure is not deteriorated by the fabrication procedure of the wire structures. For the wider quantum wires the weak antilocalization effect is clearly observed, indicating the presence of spin-orbit coupling. For narrow quantum wires with an effective electrical width below 250 nm the weak antilocalization effect is suppressed. By comparing the experimental data to a theoretical model for quasi one-dimensional structures we come to the conclusion that the spin-orbit scattering length is enhanced in narrow wires. △ Less

Submitted 28 July, 2007; v1 submitted 24 April, 2007; originally announced April 2007.

Comments: 6 pages, 5 figures

Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts

Authors: I. E. Batov, Th. Schapers, N. M. Chtchelkatchev, H. Hardtdegen, A. V. Ustinov

Abstract: We study the magnetotransport in small hybrid junctions formed by high-mobility GaInAs/InP heterostructures coupled to superconducting (S) and normal metal (N) terminals. Highly transmissive superconducting contacts to a two-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure are realized by using a Au/NbN layer system. The magnetoresistance of the S/2DEG/N structures is stud… ▽ More We study the magnetotransport in small hybrid junctions formed by high-mobility GaInAs/InP heterostructures coupled to superconducting (S) and normal metal (N) terminals. Highly transmissive superconducting contacts to a two-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure are realized by using a Au/NbN layer system. The magnetoresistance of the S/2DEG/N structures is studied as a function of dc bias current and temperature. At bias currents below a critical value, the resistance of the S/2DEG/N structures develops a strong oscillatory dependence on the magnetic field, with an amplitude of the oscillations considerably larger than that of the reference N/2DEG/N structures. The experimental results are qualitatively explained by taking Andreev reflection in high magnetic fields into account. △ Less

Submitted 1 August, 2007; v1 submitted 23 April, 2007; originally announced April 2007.

Comments: 5 pages, 5 figures

On the Possibility of Using Semiconductor Nanocolumns for the Realization of Quantum Bits

Authors: K. M. Indlekofer, Th. Schäpers

Abstract: We propose the use of quantum dots formed in a semiconductor nanocolumn for the realization of charge or spin based quantum bits. The radial carrier confinement is achieved by employing conformal overgrowth, while multiple segmented gates are used to control the quantum dot properties. Different concepts for read-out and control are discussed. Furthermore, we assess which combinations of core na… ▽ More We propose the use of quantum dots formed in a semiconductor nanocolumn for the realization of charge or spin based quantum bits. The radial carrier confinement is achieved by employing conformal overgrowth, while multiple segmented gates are used to control the quantum dot properties. Different concepts for read-out and control are discussed. Furthermore, we assess which combinations of core nanowires and shell materials are feasible. △ Less

Submitted 20 March, 2007; originally announced March 2007.

Longitudinal photocurrent spectroscopy of a single GaAs/AlGaAs v-groove quantum wire

Authors: N. I. Cade, M. Hadjipanayi, R. Roshan, A. C. Maciel, J. F. Ryan, F. Macherey, Th. Schaepers, H. Lueth

Abstract: Modulation-doped GaAs v-groove quantum wires (QWRs) have been fabricated with novel electrical contacts made to two-dimensional electron-gas (2DEG) reservoirs. Here, we present longitudinal photocurrent (photoconductivity/PC) spectroscopy measurements of a single QWR. We clearly observe conductance in the ground-state one-dimensional subbands; in addition, a highly temperature-dependent response… ▽ More Modulation-doped GaAs v-groove quantum wires (QWRs) have been fabricated with novel electrical contacts made to two-dimensional electron-gas (2DEG) reservoirs. Here, we present longitudinal photocurrent (photoconductivity/PC) spectroscopy measurements of a single QWR. We clearly observe conductance in the ground-state one-dimensional subbands; in addition, a highly temperature-dependent response is seen from other structures within the v-groove. The latter phenomenon is attributed to the effects of structural topography and localization on carrier relaxation. The results of power-dependent PC measurements suggest that the QWR behaves as a series of weakly interacting localized states, at low temperatures. △ Less

Submitted 3 April, 2006; originally announced April 2006.

Journal ref: Nanotechnology 16, 307 (2005)