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Two-dimensional photonic crystal cavities in ZnSe quantum well structures
Authors:
Siqi Qiao,
Nils von den Driesch,
Xi Chen,
Stefan Trellenkamp,
Florian Lentz,
Christoph Krause,
Benjamin Bennemann,
Thorsten Brazda,
James M. LeBeau,
Alexander Pawlis
Abstract:
ZnSe and related materials like ZnMgSe and ZnCdSe are promising II-VI host materials for optically mediated quantum information technology such as single photon sources or spin qubits. Integrating these heterostructures into photonic crystal (PC) cavities enables further improvements, for example realizing Purcell-enhanced single photon sources with increased quantum efficiency. Here we report on…
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ZnSe and related materials like ZnMgSe and ZnCdSe are promising II-VI host materials for optically mediated quantum information technology such as single photon sources or spin qubits. Integrating these heterostructures into photonic crystal (PC) cavities enables further improvements, for example realizing Purcell-enhanced single photon sources with increased quantum efficiency. Here we report on the successful implementation of two-dimensional (2D) PC cavities in strained ZnSe quantum wells (QW) on top of a novel AlAs supporting layer. This approach overcomes typical obstacles associated with PC membrane fabrication in strained materials, such as cracks and strain relaxation in the corresponding devices. We demonstrate the attainment of the required mechanical stability in our PC devices, complete strain retainment and effective vertical optical confinement. Structural analysis of our PC cavities reveals excellent etching anisotropy. Additionally, elemental mapping in a scanning transmission electron microscope confirms the transformation of AlAs into AlOx by post-growth wet oxidation and reveals partial oxidation of ZnMgSe at the etched sidewalls in the PC. This knowledge is utilized to tailor FDTD simulations and to extract the ZnMgSe dispersion relation with small oxygen content. Optical characterization of the PC cavities with cross-polarized resonance scattering spectroscopy verifies the presence of cavity modes. The excellent agreement between simulation and measured cavity mode energies demonstrates wide tunability of the PC cavity and proves the pertinence of our model. This implementation of 2D PC cavities in the ZnSe material system establishes a solid foundation for future developments of ZnSe quantum devices.
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Submitted 23 February, 2024;
originally announced February 2024.
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Flux-periodic supercurrent oscillations in an Aharonov-Bohm-type nanowire Josephson junction
Authors:
Patrick Zellekens,
Russell S. Deacon,
Farah Basaric,
Raghavendra Juluri,
Michael D. Randle,
Benjamin Bennemann,
Christoph Krause,
Erik Zimmermann,
Ana M. Sanchez,
Detlev Grützmacher,
Alexander Pawlis,
Koji Ishibashi,
Thomas Schäpers
Abstract:
Phase winding effects in hollow semiconductor nanowires with superconducting shells have been proposed as a route to engineer topological superconducting states. We investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for such devices, where the thin InAs shell confines the electron wave function around the GaAs core. With normal contacts we ob…
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Phase winding effects in hollow semiconductor nanowires with superconducting shells have been proposed as a route to engineer topological superconducting states. We investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for such devices, where the thin InAs shell confines the electron wave function around the GaAs core. With normal contacts we observed pronounced $h/e$ flux periodic oscillations in the magnetoconductance, indicating the presence of a tubular conductive channel in the InAs shell. Conversely, the switching current in Josephson junctions oscillates with approximately half that period, i.e. $h/2e$, indicating transport via Andreev transport processes in the junction enclosing threading magnetic flux. On these structures, we systematically studied the gate-, field-, and temperature-dependent evolution of the supercurrent. Results indicate that Andreev transport processes can occur about the wire circumference indicating full proximitization of the InAs shell from the half-shell superconducting contacts.
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Submitted 21 February, 2024;
originally announced February 2024.
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Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon
Authors:
Kevin Janßen,
Philipp Rüßmann,
Sergej Liberda,
Michael Schleenvoigt,
Xiao Hou,
Abdur Rehman Jalil,
Florian Lentz,
Stefan Trellenkamp,
Benjamin Bennemann,
Erik Zimmermann,
Gregor Mussler,
Peter Schüffelgen,
Claus-Michael Schneider,
Stefan Blügel,
Detlev Grützmacher,
Lukasz Plucinski,
Thomas Schäpers
Abstract:
With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricate…
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With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in situ fabricated Nb/$\mathrm{(Bi_{0.15}Sb_{0.85})_2Te_3}$ nano interface. The resulting high interface transparency is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features.
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Submitted 12 December, 2023;
originally announced December 2023.
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Ballistic surface channels in fully in situ defined Bi$_4$Te$_3$ Josephson junctions with aluminum contacts
Authors:
Daniel Rosenbach,
Abdur R. Jalil,
Tobias W. Schmitt,
Benjamin Bennemann,
Gregor Mussler,
Peter Schüffelgen,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insulator, for which due to time-reversal and mirror symmetry both a strong topological insulator phase as well as a crystalline topological phase co-exist. The format…
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In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insulator, for which due to time-reversal and mirror symmetry both a strong topological insulator phase as well as a crystalline topological phase co-exist. The formation of a supercurrent through the Bi$_4$Te$_3$ layer is explained by a two-step process. First, due to the close proximity of the Al/Ti electrodes a superconducting gap is induced within the Bi$_4$Te$_3$ layer right below the electrodes. The size of this gap is determined by analysing multiple Andreev reflections (MARs) identified within the devices differential resistance at low voltage biases. Second, based on the Andreev reflection and reverse Andreev reflection processes a supercurrent establishes in the weak link region in between these two proximity coupled regions. Analyses of the temperature dependency of both the critical current as well as MARs indicate mostly ballistic supercurrent contributions in between the proximitized Bi$_4$Te$_3$ regions even though the material is characterized by a semi-metallic bulk phase. The presence of these ballistic modes gives indications on the topological nature of Bi$_4$Te$_3$.
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Submitted 10 January, 2023;
originally announced January 2023.
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Efficient, Spectrally Tunable Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars
Authors:
Y. Kutovyi,
M. M. Jansen,
S. Qiao,
C. Falter,
N. von den Driesch,
T. Brazda,
N. Demarina,
S. Trellenkamp,
B. Bennemann,
D. Grützmacher,
A. Pawlis
Abstract:
Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as…
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Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as a highly efficient solid-state single-photon source operating at cryogenic temperatures. We show that single photons are generated due to the radiative recombination of excitons bound to neutral Cl atoms in ZnSe QW and the energy of the emitted photon can be tuned from about 2.85 down to 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following the developed advanced technology we fabricate NPs with a diameter of about 250 nm using a combination of dry and wet-chemical etching of epitaxially grown ZnSe/ZnMgSe QW well structures. The remaining resist mask serves as a spherical- or cylindrical-shaped solid immersion lens on top of NPs and leads to the emission intensity enhancement by up to an order of magnitude in comparison to the pillars without any lenses. NPs with spherical-shaped lenses show the highest emission intensity values. The clear photon-antibunching effect is confirmed by the measured value of the second-order correlation function at a zero time delay of 0.14. The developed single-photon sources are suitable for integration into scalable photonic circuits.
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Submitted 20 May, 2022;
originally announced May 2022.
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Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation
Authors:
Pujitha Perla,
H. Aruni Fonseka,
Patrick Zellekens,
Russell Deacon,
Yisong Han,
Jonas Kölzer,
Timm Mörstedt,
Benjamin Bennemann,
Koji Ishibashi,
Detlev Grützmacher,
Ana M. Sanchez,
Mihail Ion Lepsa,
Thomas Schäpers
Abstract:
Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shad…
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Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shadow evaporation of Nb on pairs of InAs nanowires grown selectively on two adjacent tilted Si (111) facets and crossing each other at a small distance. The upper wire relative to the deposition source acts as a shadow mask determining the gap of the superconducting electrodes on the lower nanowire. Electron microscopy measurements show that the fully in-situ fabrication method gives a clean InAs/Nb interface. A clear Josephson supercurrent is observed in the current-voltage characteristics, which can be controlled by a bottom gate. The excess current of 0.68 indicates a high junction transparency. Under microwave radiation, pronounced integer Shapiro steps are observed suggesting a sinusoidal current-phase relation. Owing to the large critical field of Nb, the Josephson supercurrent can be maintained to magnetic fields exceeding 1 T. Our results show that in-situ prepared Nb/InAs nanowire contacts are very interesting candidates for superconducting quantum circuits requiring large magnetic fields.
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Submitted 12 November, 2020;
originally announced November 2020.
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Integration of topological insulator Josephson junctions in superconducting qubit circuits
Authors:
Tobias W. Schmitt,
Malcolm R. Connolly,
Michael Schleenvoigt,
Chenlu Liu,
Oscar Kennedy,
José M. Chávez-Garcia,
Abdur R. Jalil,
Benjamin Bennemann,
Stefan Trellenkamp,
Florian Lentz,
Elmar Neumann,
Tobias Lindström,
Sebastian E. de Graaf,
Erwin Berenschot,
Niels Tas,
Gregor Mussler,
Karl D. Petersson,
Detlev Grützmacher,
Peter Schüffelgen
Abstract:
The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we…
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The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with $(Bi_{0.06}Sb_{0.94})_{2}Te_{3}$ topological insulator (TI) JJs using ultra-high vacuum fabrication techniques. Microwave losses on our substrates with monolithically integrated hardmask, used for selective area growth of TI nanostructures, imply microsecond limits to relaxation times and thus their compatibility with strong-coupling cQED. We use the cavity-qubit interaction to show that the Josephson energy of TI-based transmons scales with their JJ dimensions and demonstrate qubit control as well as temporal quantum coherence. Our results pave the way for advanced investigations of topological materials in both novel Josephson and topological qubits.
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Submitted 18 September, 2021; v1 submitted 8 July, 2020;
originally announced July 2020.
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Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction
Authors:
Patrick Zellekens,
Russell Deacon,
Pujitha Perla,
H. Aruni Fonseka,
Timm Moerstedt,
Steven A. Hindmarsh,
Benjamin Bennemann,
Florian Lentz,
Mihail Ion Lepsa,
Ana M. Sanchez,
Detlev Grützmacher,
Koji Ishibashi,
Thomas Schäpers
Abstract:
Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be…
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Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be precisely controlled. We fabricated self-defined InAs/Al core/shell nanowire junctions by a fully in-situ approach, which meet all these criteria. Transmission electron microscopy measurements confirm the sharp and clean interface between the nanowire and the in-situ deposited Al electrodes which were formed by means of shadow evaporation. Furthermore, we report on tunnel spectroscopy, gate and magnetic field-dependent transport measurements. The achievable short junction lengths,the observed hard-gap and the magnetic field robustness make this new hybrid structure very attractive for applications which rely on a precise control of the number of sub-gap states, like Andreev qubits or topological systems.
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Submitted 29 July, 2020; v1 submitted 21 April, 2020;
originally announced April 2020.
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Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
Authors:
Peter Schüffelgen,
Daniel Rosenbach,
Chuan Li,
Tobias Schmitt,
Michael Schleenvoigt,
Abdur R. Jalil,
Jonas Kölzer,
Meng Wang,
Benjamin Bennemann,
Umut Parlak,
Lidia Kibkalo,
Martina Luysberg,
Gregor Mussler,
Alexander. A. Golubov,
Alexander Brinkman,
Thomas Schäpers,
Detlev Grützmacher
Abstract:
Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. H…
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Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. Here, we present an in-situ process, which allows to fabricate such hybrids by combining molecular beam epitaxy and stencil lithography. As-prepared Josephson junctions show nearly perfect interface transparency and very large $I_CR_N$ products. The Shapiro response of radio frequency measurements indicates the presence of gapless Andreev bound states, so-called Majorana bound states.
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Submitted 20 October, 2018; v1 submitted 5 November, 2017;
originally announced November 2017.
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MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures
Authors:
Nicholas A. Güsken,
Torsten Rieger,
Benjamin Bennemann,
Elmar Neumann,
Mihail Ion Lepsa,
Thomas Schäpers,
Detlev Grützmacher
Abstract:
We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest…
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We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest for ongoing research in the fields of gateable Josephson junctions and quantum information related research. Systematic investigations of the deposition parameters suitable for metal shell growth are conducted. In case of Al, the substrate temperature, the growth rate and the shell thickness are considered. The substrate temperature as well as the angle of the impinging deposition flux are explored for Nb shells. The core-shell hybrid structures are characterized by electron microscopy and x-ray spectroscopy. Our results show that the substrate temperature is a crucial parameter in order to enable the deposition of smooth Al layers. Contrary, Nb films are less dependent on substrate temperature but strongly affected by the deposition angle. At a temperature of 200°C Nb reacts with InAs, dissolving the nanowire crystal. Our investigations result in smooth metal shells exhibiting an impurity and defect free, crystalline superconductor/InAs interface. Additionally, we find that the superconductor crystal structure is not affected by stacking faults present in the InAs nanowires.
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Submitted 9 July, 2017;
originally announced July 2017.
