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Topological insulator based axial superconducting quantum interferometer structures
Authors:
Erik Zimmermann,
Abdur Rehman Jalil,
Michael Schleenvoigt,
Jan Karthein,
Benedikt Frohn,
Gerrit Behner,
Florian Lentz,
Stefan Trellenkamp,
Elmar Neumann,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillati…
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Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillations are explained by interference effects of coherent transport through topological surface states surrounding the cross-section of the nanoribbon.
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Submitted 20 March, 2024;
originally announced March 2024.
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Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon
Authors:
Kevin Janßen,
Philipp Rüßmann,
Sergej Liberda,
Michael Schleenvoigt,
Xiao Hou,
Abdur Rehman Jalil,
Florian Lentz,
Stefan Trellenkamp,
Benjamin Bennemann,
Erik Zimmermann,
Gregor Mussler,
Peter Schüffelgen,
Claus-Michael Schneider,
Stefan Blügel,
Detlev Grützmacher,
Lukasz Plucinski,
Thomas Schäpers
Abstract:
With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricate…
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With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in situ fabricated Nb/$\mathrm{(Bi_{0.15}Sb_{0.85})_2Te_3}$ nano interface. The resulting high interface transparency is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features.
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Submitted 12 December, 2023;
originally announced December 2023.
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In-plane magnetic field driven conductance modulations in topological insulator kinks
Authors:
Gerrit Behner,
Kristof Moors,
Yong Zhang,
Michael Schleenvoigt,
Alina Rupp,
Erik Zimmermann,
Abdur Rehman Jalil,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects the…
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We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects their transmission across the kink. This magnetic field-driven trapping and conductance pattern can be explained with a semiclassical picture and is supported by quantum transport simulations. The interpretation is corroborated by varying the angle of the kink and analyzing the temperature dependence of the observed magnetoconductance pattern, indicating the importance of phase coherence along the cross section perimeter of the kink legs.
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Submitted 1 May, 2024; v1 submitted 10 October, 2023;
originally announced October 2023.
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Current-induced magnetization switching in a magnetic topological insulator heterostructure
Authors:
Erik Zimmermann,
Justus Teller,
Michael Schleenvoigt,
Gerrit Behner,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias current dependence of the coercive field, which is attributed to the effect of the spin-orbit torque provided by the unpolarized bias current. Increasing the bias c…
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We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias current dependence of the coercive field, which is attributed to the effect of the spin-orbit torque provided by the unpolarized bias current. Increasing the bias current leads to a decrease in the magnetic order in the sample. When the applied current is subsequently reduced, the magnetic moments align with an externally applied magnetic field, resulting in repolarization in the opposite direction. This includes a reversal of the spin polarisation and hence a reversal of the chiral edge mode. Possible applications in spintronic devices are discussed.
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Submitted 15 August, 2023;
originally announced August 2023.
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Fourier transformation based analysis routine for intermixed longitudinal and transversal hysteretic data for the example of a magnetic topological insulator
Authors:
Erik Zimmermann,
Michael Schleenvoigt,
Alina Rupp,
Gerrit Behner,
Jan Karthein,
Justus Teller,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
We present a symmetrization routine that optimizes and eases the analysis of data featuring the anomalous Hall effect. This technique can be transferred to any hysteresis with (point-)symmetric behaviour. The implementation of the method is demonstrated exemplarily using intermixed longitudinal and transversal data obtained from a chromium-doped ternary topological insulator revealing a clear hyst…
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We present a symmetrization routine that optimizes and eases the analysis of data featuring the anomalous Hall effect. This technique can be transferred to any hysteresis with (point-)symmetric behaviour. The implementation of the method is demonstrated exemplarily using intermixed longitudinal and transversal data obtained from a chromium-doped ternary topological insulator revealing a clear hysteresis. Furthermore, by introducing a mathematical description of the anomalous Hall hysteresis based on the error function precise values of the height and coercive field are determined.
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Submitted 31 July, 2023;
originally announced July 2023.
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Aharonov-Bohm interference and phase-coherent surface-state transport in topological insulator rings
Authors:
Gerrit Behner,
Abdur Rehman Jalil,
Dennis Heffels,
Jonas Kölzer,
Kristof Moors,
Jonas Mertens,
Erik Zimmermann,
Gregor Mussler,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations…
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We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations originate from ballistic transport along the ring arms. The oscillations can therefore be attributed to topological surface states, which can maintain a quasi-ballistic transport regime in the presence of disorder. Further insight on the phase coherence is gained by comparing with similar Aharonov-Bohm-type oscillations in topological insulator nanoribbons exposed to an axial magnetic field. Here, quasi-ballistic phase-coherent transport is confirmed for closed-loop topological surface states in transverse direction enclosing the cross-section of the nanoribbon. In contrast, the appearance of universal conductance fluctuations indicates phase-coherent transport in the diffuse regime, which is attributed to bulk carrier transport. Thus, it appears that even in the presence of diffusive $p$-type charge carriers in Aharonov-Bohm ring structures, phase-coherent quasi-ballistic transport of topologically protected surface states is maintained over long distances.
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Submitted 3 March, 2023;
originally announced March 2023.
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Robust Majorana bound states in magnetic topological insulator nanoribbons with fragile chiral edge channels
Authors:
Declan Burke,
Dennis Heffels,
Kristof Moors,
Peter Schüffelgen,
Detlev Grützmacher,
Malcolm R. Connolly
Abstract:
Magnetic topological insulators in the quantum anomalous Hall regime host ballistic chiral edge channels. When proximitized by an $s$-wave superconductor, these edge states offer the potential for realizing topological superconductivity and Majorana bound states without the detrimental effect of large externally-applied magnetic fields on superconductivity. Realizing well-separated unpaired Majora…
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Magnetic topological insulators in the quantum anomalous Hall regime host ballistic chiral edge channels. When proximitized by an $s$-wave superconductor, these edge states offer the potential for realizing topological superconductivity and Majorana bound states without the detrimental effect of large externally-applied magnetic fields on superconductivity. Realizing well-separated unpaired Majorana bound states requires magnetic topological insulator ribbons with a width of the order of the transverse extent of the edge state, however, which is expected to bring the required ribbon width down to around 100 nm. In this regime, it is known to be extremely difficult to retain the ballistic nature of chiral edge channels and realize a quantized Hall conductance. In this paper, we study the impact of disorder in such magnetic topological insulator nanoribbons and compare the fragility of ballistic chiral edge channels with the stability of Majorana bound states when the ribbon is covered by a superconducting film. We find that the Majorana bound states exhibit greater robustness against disorder than the underlying chiral edge channels.
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Submitted 23 January, 2024; v1 submitted 21 February, 2023;
originally announced February 2023.
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Observation of Josephson Harmonics in Tunnel Junctions
Authors:
Dennis Willsch,
Dennis Rieger,
Patrick Winkel,
Madita Willsch,
Christian Dickel,
Jonas Krause,
Yoichi Ando,
Raphaël Lescanne,
Zaki Leghtas,
Nicholas T. Bronn,
Pratiti Deb,
Olivia Lanes,
Zlatko K. Minev,
Benedikt Dennig,
Simon Geisert,
Simon Günzler,
Sören Ihssen,
Patrick Paluch,
Thomas Reisinger,
Roudy Hanna,
Jin Hee Bae,
Peter Schüffelgen,
Detlev Grützmacher,
Luiza Buimaga-Iarinca,
Cristian Morari
, et al. (5 additional authors not shown)
Abstract:
Superconducting quantum processors have a long road ahead to reach fault-tolerant quantum computing. One of the most daunting challenges is taming the numerous microscopic degrees of freedom ubiquitous in solid-state devices. State-of-the-art technologies, including the world's largest quantum processors, employ aluminum oxide (AlO$_x$) tunnel Josephson junctions (JJs) as sources of nonlinearity,…
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Superconducting quantum processors have a long road ahead to reach fault-tolerant quantum computing. One of the most daunting challenges is taming the numerous microscopic degrees of freedom ubiquitous in solid-state devices. State-of-the-art technologies, including the world's largest quantum processors, employ aluminum oxide (AlO$_x$) tunnel Josephson junctions (JJs) as sources of nonlinearity, assuming an idealized pure $\sin\varphi$ current-phase relation (C$\varphi$R). However, this celebrated $\sin\varphi$ C$\varphi$R is only expected to occur in the limit of vanishingly low-transparency channels in the AlO$_x$ barrier. Here we show that the standard C$\varphi$R fails to accurately describe the energy spectra of transmon artificial atoms across various samples and laboratories. Instead, a mesoscopic model of tunneling through an inhomogeneous AlO$_x$ barrier predicts %-level contributions from higher Josephson harmonics. By including these in the transmon Hamiltonian, we obtain orders of magnitude better agreement between the computed and measured energy spectra. The reality of Josephson harmonics transforms qubit design and prompts a reevaluation of models for quantum gates and readout, parametric amplification and mixing, Floquet qubits, protected Josephson qubits, etc. As an example, we show that engineered Josephson harmonics can reduce the charge dispersion and the associated errors in transmon qubits by an order of magnitude, while preserving anharmonicity.
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Submitted 22 August, 2023; v1 submitted 17 February, 2023;
originally announced February 2023.
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Ballistic surface channels in fully in situ defined Bi$_4$Te$_3$ Josephson junctions with aluminum contacts
Authors:
Daniel Rosenbach,
Abdur R. Jalil,
Tobias W. Schmitt,
Benjamin Bennemann,
Gregor Mussler,
Peter Schüffelgen,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insulator, for which due to time-reversal and mirror symmetry both a strong topological insulator phase as well as a crystalline topological phase co-exist. The format…
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In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insulator, for which due to time-reversal and mirror symmetry both a strong topological insulator phase as well as a crystalline topological phase co-exist. The formation of a supercurrent through the Bi$_4$Te$_3$ layer is explained by a two-step process. First, due to the close proximity of the Al/Ti electrodes a superconducting gap is induced within the Bi$_4$Te$_3$ layer right below the electrodes. The size of this gap is determined by analysing multiple Andreev reflections (MARs) identified within the devices differential resistance at low voltage biases. Second, based on the Andreev reflection and reverse Andreev reflection processes a supercurrent establishes in the weak link region in between these two proximity coupled regions. Analyses of the temperature dependency of both the critical current as well as MARs indicate mostly ballistic supercurrent contributions in between the proximitized Bi$_4$Te$_3$ regions even though the material is characterized by a semi-metallic bulk phase. The presence of these ballistic modes gives indications on the topological nature of Bi$_4$Te$_3$.
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Submitted 10 January, 2023;
originally announced January 2023.
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Supercurrent in Bi$_4$Te$_3$ Topological Material-Based Three-Terminal Junctions
Authors:
Jonas Kölzer,
Abdur Rehman Jalil,
Daniel Rosenbach,
Lisa Arndt,
Gregor Mussler,
Peter Schüffelgen,
Detlev Grützmacher,
Hans Lüth,
Thomas Schäpers
Abstract:
In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of t…
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In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of the junctions is interpreted using a numerical simulation of a similar geometry based on a resistively and capacitively shunted Josephson junction model. The temperature dependency indicates that the device behaves similar to prior experiments with single Josephson junctions comprising topological insulators weak links. Irradiating radio frequencies to the junction we find a spectrum of integer Shapiro steps and an additional fractional step, which is interpreted by a skewed current-phase relationship. In a perpendicular magnetic field we observe Fraunhofer-like interference patterns of the switching currents.
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Submitted 3 January, 2023;
originally announced January 2023.
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Robust and fragile Majorana bound states in proximitized topological insulator nanoribbons
Authors:
Dennis Heffels,
Declan Burke,
Malcolm R. Connolly,
Peter Schüffelgen,
Detlev Grützmacher,
Kristof Moors
Abstract:
Topological insulator (TI) nanoribbons with proximity-induced superconductivity are a promising platform for Majorana bound states (MBSs). In this work, we consider a detailed modeling approach for a TI nanoribbon in contact with a superconductor via its top surface, which induces a superconducting gap in its surface-state spectrum. The system displays a rich phase diagram with different numbers o…
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Topological insulator (TI) nanoribbons with proximity-induced superconductivity are a promising platform for Majorana bound states (MBSs). In this work, we consider a detailed modeling approach for a TI nanoribbon in contact with a superconductor via its top surface, which induces a superconducting gap in its surface-state spectrum. The system displays a rich phase diagram with different numbers of end-localized MBSs as a function of chemical potential and magnetic flux piercing the cross section of the ribbon. These MBSs can be robust or fragile upon consideration of electrostatic disorder. We simulate a tunneling spectroscopy setup to probe the different topological phases of top-proximitized TI nanoribbons. Our simulation results indicate that a top-proximitized TI nanoribbon is ideally suited for realizing fully gapped topological superconductivity, in particular when the Fermi level is pinned near the Dirac point. In this regime, the setup yields a single pair of MBSs, well separated at opposite ends of the proximitized ribbon, which gives rise to a robust quantized zero-bias conductance peak.
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Submitted 22 February, 2023; v1 submitted 29 December, 2022;
originally announced December 2022.
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Probing edge state conductance in ultra-thin topological insulator films
Authors:
Arthur Leis,
Michael Schleenvoigt,
Kristof Moors,
Helmut Soltner,
Vasily Cherepanov,
Peter Schüffelgen,
Gregor Mussler,
Detlev Grützmacher,
Bert Voigtländer,
Felix Lüpke,
F. Stefan Tautz
Abstract:
Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge st…
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Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge states in nanoscale spectroscopy, and the detection of ballistic transport in edge channels which typically relies on transport experiments with microscale lithographic contacts. Here, we study few-layer films of the three-dimensional topological insulator (Bi$_{x}$Sb$_{1-x})_2$Te$_3$, for which a topological transition to a two-dimensional topological QSH insulator phase has been proposed. Indeed, an edge state in the local density of states is observed within the band gap. Yet, in nanoscale transport experiments with a four-tip STM, 2 and 3 quintuple layer films do not exhibit a ballistic conductance in the edge channels. This demonstrates that the detection of edge states in spectroscopy can be misleading with regard to the identification of a QSH phase. In contrast, nanoscale multi-tip transport experiments are a robust method for effectively pinpointing ballistic edge channels, as opposed to trivial edge states, in quantum materials.
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Submitted 7 April, 2022;
originally announced April 2022.
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Spin coherence of near-surface ionised $^{125}$Te$^+$ donors in silicon
Authors:
Mantas Šimėnas,
James O'Sullivan,
Oscar W. Kennedy,
Sen Lin,
Sarah Fearn,
Christoph W. Zollitsch,
Gavin Dold,
Tobias Schmitt,
Peter Schüffelgen,
Ren-Bao Liu,
John J. L. Morton
Abstract:
Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can…
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Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI $^{125}$Te$^+$ donors implanted into natural Si at depths as shallow as 20~nm. We show that surface band-bending can be used to ionise such near-surface Te to spin-active Te$^+$ state, and that optical illumination can be used further to control the Te donor charge state. We examine spin activation yield, spin linewidth, relaxation ($T_1$) and coherence times (\ttwo) and show how a zero-field 3.5~GHz `clock transition' extends spin coherence times to over 1~ms, which is about an order of magnitude longer than other near-surface spin systems.
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Submitted 2 June, 2022; v1 submitted 17 August, 2021;
originally announced August 2021.
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Lifting the spin-momentum locking in ultra-thin topological insulator films
Authors:
Arthur Leis,
Michael Schleenvoigt,
Vasily Cherepanov,
Felix Lüpke,
Peter Schüffelgen,
Gregor Mussler,
Detlev Grützmacher,
Bert Voigtländer,
F. Stefan Tautz
Abstract:
Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological surface states at the top and bottom surfaces results in a topological quantum phase transition, which can lead to the emergence of a quantum spin Hal…
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Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological surface states at the top and bottom surfaces results in a topological quantum phase transition, which can lead to the emergence of a quantum spin Hall phase. Here, we study the thickness-dependent transport properties across the quantum phase transition on the example of (Bi$_{0.16}$Sb$_{0.84}$)$_2$Te$_3$ films, with a four-tip scanning tunnelling microscope. Our findings reveal an exponential drop of the conductivity below the critical thickness. The steepness of this drop indicates the presence of spin-conserving backscattering between the top and bottom surface states, effectively lifting the spin-momentum locking and resulting in the opening of a gap at the Dirac point. Our experiments provide crucial steps towards the detection of quantum spin Hall states in transport measurements.
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Submitted 11 June, 2021;
originally announced June 2021.
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Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons
Authors:
Daniel Rosenbach,
Kristof Moors,
Abdur R. Jalil,
Jonas Kölzer,
Erik Zimmermann,
Jürgen Schubert,
Soraya Karimzadah,
Gregor Mussler,
Peter Schüffelgen,
Detlev Grützmacher,
Hans Lüth,
Thomas Schäpers
Abstract:
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berr…
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Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berry phase offset of $π$ of self-interfering charge carriers an energy gap within the surface state dispersion appears and all states become spin-degenerate. We investigate and compare the magnetic field dependent surface state dispersion in selectively deposited Bi$_2$Te$_3$ TI micro- and nanoribbon structures by analysing the gate voltage dependent magnetoconductance at cryogenic temperatures. While in wide microribbon devices the field effect mainly changes the amount of bulk charges close to the top surface we identify coherent transverse surface states along the perimeter of the nanoribbon devices responding to a change in top gate potential. We quantify the energetic spacing in between these quantized transverse subbands by using an electrostatic model that treats an initial difference in charge carrier densities on the top and bottom surface as well as remaining bulk charges. In the gate voltage dependent transconductance we find oscillations that change their relative phase by $π$ at half-integer values of the magnetic flux quantum applied coaxial to the nanoribbon, which is a signature for a magnetic flux dependent topological phase transition in narrow, selectively deposited TI nanoribbon devices.
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Submitted 8 February, 2022; v1 submitted 7 April, 2021;
originally announced April 2021.
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Quantum Spin-Valley Hall Kink States: From Concept to Materials Design
Authors:
Tong Zhou,
Shuguang Cheng,
Michael Schleenvoigt,
Peter Schuffelgen,
Hua Jiang,
Zhongqin Yang,
Igor Zutic
Abstract:
We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably…
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We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably, the conductance of QSVHK states remains quantized against either nonmagnetic or long-range magnetic disorder, verified by the Green function calculations. Based on first-principles results, we show that QSVHK states, protected with a gap up to 287 meV, can be realized in bismuthene by alloy engineering, surface functionalization, or electric field, supporting non-volatile applications of spin-valley filters, valves, and waveguides even at room temperature.
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Submitted 9 September, 2021; v1 submitted 10 February, 2021;
originally announced February 2021.
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In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions
Authors:
Jonas Kölzer,
Kristof Moors,
Abur R. Jalil,
Erik Zimmermann,
Daniel Rosenbach,
Lidia Kibkalo,
Peter Schüffelgen,
Gregor Mussler,
Detlev Grützmacher,
Thomas L. Schmidt,
Hans Lüth,
Thomas Schäpers
Abstract:
Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an…
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Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an in-plane magnetic field, the orbital effect cannot be neglected when the surface states are confined to the boundary of a nanoribbon geometry. Here, we report on the magnetotransport properties of such three-terminal junctions. We observe a dependence of the current on the in-plane magnetic field, with a distinct steering pattern of the surface state current towards a preferred output terminal for different magnetic field orientations. We demonstrate that this steering effect originates from the orbital effect, trapping the phase-coherent surface states in the different legs of the junction on opposite sides of the nanoribbon and breaking the left-right symmetry of the transmission across the junction. The reported magnetotransport properties demonstrate that an in-plane magnetic field is not only relevant but also very useful for the characterization and manipulation of transport in three-dimensional topological insulator nanoribbon-based junctions and circuits, acting as a topoelectric current switch.
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Submitted 22 December, 2021; v1 submitted 30 December, 2020;
originally announced December 2020.
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Integration of topological insulator Josephson junctions in superconducting qubit circuits
Authors:
Tobias W. Schmitt,
Malcolm R. Connolly,
Michael Schleenvoigt,
Chenlu Liu,
Oscar Kennedy,
José M. Chávez-Garcia,
Abdur R. Jalil,
Benjamin Bennemann,
Stefan Trellenkamp,
Florian Lentz,
Elmar Neumann,
Tobias Lindström,
Sebastian E. de Graaf,
Erwin Berenschot,
Niels Tas,
Gregor Mussler,
Karl D. Petersson,
Detlev Grützmacher,
Peter Schüffelgen
Abstract:
The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we…
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The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with $(Bi_{0.06}Sb_{0.94})_{2}Te_{3}$ topological insulator (TI) JJs using ultra-high vacuum fabrication techniques. Microwave losses on our substrates with monolithically integrated hardmask, used for selective area growth of TI nanostructures, imply microsecond limits to relaxation times and thus their compatibility with strong-coupling cQED. We use the cavity-qubit interaction to show that the Josephson energy of TI-based transmons scales with their JJ dimensions and demonstrate qubit control as well as temporal quantum coherence. Our results pave the way for advanced investigations of topological materials in both novel Josephson and topological qubits.
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Submitted 18 September, 2021; v1 submitted 8 July, 2020;
originally announced July 2020.
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Phase-coherent loops in selectively-grown topological insulator nanoribbons
Authors:
Jonas Kölzer,
Daniel Rosenbach,
Christian Weyrich,
Tobias W. Schmitt,
Michael Schleenvoigt,
Abdur Rehman Jalil,
Peter Schüffelgen,
Gregor Mussler,
Vincent E. Sacksteder IV,
Detlev Grützmacher,
Hans Lüth,
Thomas Schäpers
Abstract:
Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused…
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Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused by well-defined and sharply resolved phase-coherent loops. From measurements at different magnetic field tilt angles we deduced that these loops are preferentially oriented parallel to the quintuple layers of the topological insulator material. Both from a theoretical analysis of universal conductance fluctuations and from weak antilocalization measured at low temperature the electronic phase-coherence lengths $l_φ$ are extracted, which is found to be larger in the former case. Possible reasons for this deviation are discussed.
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Submitted 23 July, 2019;
originally announced July 2019.
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Long-lived non-equilibrium superconductivity in a non-centrosymmetric Rashba semiconductor
Authors:
V. Narayan,
P. C. Verpoort,
J. R. A. Dann,
D. Backes,
C. J. B. Ford,
M. Lanius,
A. R. Jalil,
P. Schüffelgen,
G. Mussler,
G. J. Conduit,
D. Grützmacher
Abstract:
We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-equilibrium state, which decays on time scales that exceed conventional electronic scattering times by many orders of magnitude. This reveals a non-equilibrium magnetoresponse that is asymmetric under magnetic field rever…
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We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-equilibrium state, which decays on time scales that exceed conventional electronic scattering times by many orders of magnitude. This reveals a non-equilibrium magnetoresponse that is asymmetric under magnetic field reversal and, strikingly, induces a non-equilibrium superconducting state distinct from the equilibrium one. We develop a model of a Rashba system where non-equilibrium configurations relax on a finite timescale which captures the qualitative features of the data. We also obtain evidence for the slow dynamics in another non-superconducting Rashba system. Our work provides novel insights into the dynamics of non-centrosymmetric superconductors and Rashba systems in general.
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Submitted 12 February, 2019;
originally announced February 2019.
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Magnetotransport signatures of three-dimensional topological insulator nanostructures
Authors:
Kristof Moors,
Peter Schüffelgen,
Daniel Rosenbach,
Tobias Schmitt,
Thomas Schäpers,
Thomas L. Schmidt
Abstract:
We study the magnetotransport properties of patterned 3D topological insulator nanostructures with several leads, such as kinks or Y-junctions, near the Dirac point with analytical as well as numerical techniques. The interplay of the nanostructure geometry, the external magnetic field and the spin-momentum locking of the topological surface states lead to a richer magnetoconductance phenomenology…
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We study the magnetotransport properties of patterned 3D topological insulator nanostructures with several leads, such as kinks or Y-junctions, near the Dirac point with analytical as well as numerical techniques. The interplay of the nanostructure geometry, the external magnetic field and the spin-momentum locking of the topological surface states lead to a richer magnetoconductance phenomenology as compared to straight nanowires. Similar to straight wires, a quantized conductance with perfect transmission across the nanostructure can be realized across a kink when the input and output channels are pierced by a half-integer magnetic flux quantum. Unlike for straight wires, there is an additional requirement depending on the orientation of the external magnetic field. A right-angle kink shows a unique $π$-periodic magnetoconductance signature as a function of the in-plane angle of the magnetic field. For a Y-junction, the transmission can be perfectly steered to either of the two possible output legs by a proper alignment of the external magnetic field. These magnetotransport signatures offer new ways to explore topological surface states and could be relevant for quantum transport experiments on nanostructures which can be realized with existing fabrication methods.
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Submitted 9 March, 2021; v1 submitted 28 January, 2018;
originally announced January 2018.
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Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
Authors:
Peter Schüffelgen,
Daniel Rosenbach,
Chuan Li,
Tobias Schmitt,
Michael Schleenvoigt,
Abdur R. Jalil,
Jonas Kölzer,
Meng Wang,
Benjamin Bennemann,
Umut Parlak,
Lidia Kibkalo,
Martina Luysberg,
Gregor Mussler,
Alexander. A. Golubov,
Alexander Brinkman,
Thomas Schäpers,
Detlev Grützmacher
Abstract:
Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. H…
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Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. Here, we present an in-situ process, which allows to fabricate such hybrids by combining molecular beam epitaxy and stencil lithography. As-prepared Josephson junctions show nearly perfect interface transparency and very large $I_CR_N$ products. The Shapiro response of radio frequency measurements indicates the presence of gapless Andreev bound states, so-called Majorana bound states.
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Submitted 20 October, 2018; v1 submitted 5 November, 2017;
originally announced November 2017.
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Electrical resistance of individual defects at a topological insulator surface
Authors:
Felix Lüpke,
Markus Eschbach,
Tristan Heider,
Martin Lanius,
Peter Schüffelgen,
Daniel Rosenbach,
Nils von den Driesch,
Vasily Cherepanov,
Gregor Mussler,
Lukasz Plucinski,
Detlev Grützmacher,
Claus M. Schneider,
Bert Voigtländer
Abstract:
Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defect…
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Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. The largest localized voltage drop we find to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared to the other defects.
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Submitted 20 April, 2017;
originally announced April 2017.
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Reinventing Solid State Electronics: Harnessing Quantum Confinement in Bismuth Thin Films
Authors:
Farzan Gity,
Lida Ansari,
Martin Lanius,
Peter Schüffelgen,
Gregor Mussler,
Detlev Grützmacher,
James C. Greer
Abstract:
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages is achieved. As miniaturization continue…
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Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages is achieved. As miniaturization continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form rectifying junctions fails and heterojunction formation becomes extremely difficult. Here it is shown there is no need to introduce dopant atoms nor is the formation of a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved for the first time solely by manipulation of quantum confinement in approximately 2 nanometer thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this new quantum approach enables room temperature operation.
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Submitted 17 September, 2016;
originally announced September 2016.
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$\mbox{Bi}_{1}\mbox{Te}_{1}$: a dual topological insulator
Authors:
Markus Eschbach,
Martin Lanius,
Chengwang Niu,
Ewa Młyńczak,
Pika Gospodarič,
Jens Kellner,
Peter Schüffelgen,
Mathias Gehlmann,
Sven Döring,
Elmar Neumann,
Martina Luysberg,
Gregor Mussler,
Lukasz Plucinski,
Markus Morgenstern,
Detlev Grützmacher,
Gustav Bihlmayer,
Stefan Blügel,
Claus M. Schneider
Abstract:
A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non t…
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A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non trivial time-reversal symmetry-driven character of $\mathbb{Z}_{2}=(0;001)$ and additionally a mirror-symmetry induced mirror Chern number of $n_{\cal M}=-2$, which indicates that $\mathrm{Bi_{1}Te_{1}}$ is both a weak topological insulator and a topological crystalline insulator. The coexistence of the two phenomena preordains distinct crystal planes to host topological surface states that are protected by the respective symmetries. The surface perpendicular to the stacking direction is the 'dark' surface of the weak topological insulator, while hosting mirror-symmetry protected surface states along the $\bar{Γ\mathrm{M}}$ direction at non-time-reversal invariant momenta points. We confirm the stacking sequence of our MBE-grown $\mathrm{Bi_{1}Te_{1}}$ thin films by X-ray diffraction and transmission electron microscopy, and find indications of the topological crystalline and weak topological character in the surface electronic spin structure by spin- and angle-resolved photoemission spectroscopy, which nicely match the results from density functional theory.
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Submitted 29 April, 2016;
originally announced April 2016.
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Josephson supercurrent through the topological surface states of strained bulk HgTe
Authors:
Jeroen B. Oostinga,
Luis Maier,
Peter Schueffelgen,
Daniel Knott,
Christopher Ames,
Christoph Bruene,
Grigory Tkachov,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
Strained bulk HgTe is a three-dimensional topological insulator, whose surface electrons have a high mobility (30,000 cm^2/Vs), while its bulk is effectively free of mobile charge carriers. These properties enable a study of transport through its unconventional surface states without being hindered by a parallel bulk conductance. Here, we show transport experiments on HgTe-based Josephson junction…
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Strained bulk HgTe is a three-dimensional topological insulator, whose surface electrons have a high mobility (30,000 cm^2/Vs), while its bulk is effectively free of mobile charge carriers. These properties enable a study of transport through its unconventional surface states without being hindered by a parallel bulk conductance. Here, we show transport experiments on HgTe-based Josephson junctions to investigate the appearance of the predicted Majorana states at the interface between a topological insulator and a superconductor. Interestingly, we observe a dissipationless supercurrent flow through the topological surface states of HgTe. The current-voltage characteristics are hysteretic at temperatures below 1 K with critical supercurrents of several microamperes. Moreover, we observe a magnetic field induced Fraunhofer pattern of the critical supercurrent, indicating a dominant 2π-periodic Josephson effect in the unconventional surface states. Our results show that strained bulk HgTe is a promising material system to get a better understanding of the Josephson effect in topological surface states, and to search for the manifestation of zero-energy Majorana states in transport experiments.
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Submitted 1 June, 2013;
originally announced June 2013.
