Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction
Authors:
Patrick Zellekens,
Russell Deacon,
Pujitha Perla,
H. Aruni Fonseka,
Timm Moerstedt,
Steven A. Hindmarsh,
Benjamin Bennemann,
Florian Lentz,
Mihail Ion Lepsa,
Ana M. Sanchez,
Detlev Grützmacher,
Koji Ishibashi,
Thomas Schäpers
Abstract:
Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be…
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Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be precisely controlled. We fabricated self-defined InAs/Al core/shell nanowire junctions by a fully in-situ approach, which meet all these criteria. Transmission electron microscopy measurements confirm the sharp and clean interface between the nanowire and the in-situ deposited Al electrodes which were formed by means of shadow evaporation. Furthermore, we report on tunnel spectroscopy, gate and magnetic field-dependent transport measurements. The achievable short junction lengths,the observed hard-gap and the magnetic field robustness make this new hybrid structure very attractive for applications which rely on a precise control of the number of sub-gap states, like Andreev qubits or topological systems.
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Submitted 29 July, 2020; v1 submitted 21 April, 2020;
originally announced April 2020.
Nanomaterials of the topological crystalline insulators, Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se
Authors:
M Saghir,
A. M. Sanchez,
S. A. Hindmarsh,
S. J. York,
G. Balakrishnan
Abstract:
Topological insulators (TIs) and topological crystal insulators (TCIs) exhibit exotic surface properties. We present optimised growth procedures to obtain high quality bulk crystals of the TCIs Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se, and nanowires from the bulk crystals using the vapour-liquid-solid (VLS) technique. Nanowires of Pb_(1-x)Sn_(x)Te have been produced with a Sn composition of approx. x…
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Topological insulators (TIs) and topological crystal insulators (TCIs) exhibit exotic surface properties. We present optimised growth procedures to obtain high quality bulk crystals of the TCIs Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se, and nanowires from the bulk crystals using the vapour-liquid-solid (VLS) technique. Nanowires of Pb_(1-x)Sn_(x)Te have been produced with a Sn composition of approx. x = 0.25, at which a transition from trivial to non-trivial insulator is reported. The results obtained on the growth of nanomaterials of Pb_(1-x)Sn_(x)Se are also described. Detailed characterisation of the bulk crystals and the nanomaterials through x-ray diffraction, microscopy techniques and EDX analysis are presented.
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Submitted 20 November, 2015;
originally announced November 2015.
