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Nanoscale variation of the Rashba energy in BiTeI
Authors:
Ruizhe Kang,
Jian-Feng Ge,
Yang He,
Zhihuai Zhu,
Daniel T. Larson,
Mohammed Saghir,
Jason D. Hoffman,
Geetha Balakrishnan,
Jennifer E. Hoffman
Abstract:
BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin transport in this material. Using scanning tunneling microscopy and spectroscopy, we image ring-like charging states of single-atom defects on the iodine surface of…
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BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin transport in this material. Using scanning tunneling microscopy and spectroscopy, we image ring-like charging states of single-atom defects on the iodine surface of BiTeI. We observe nanoscale variations in the Rashba energy around each defect, which we correlate with the local electric field extracted from the bias dependence of each ring radius. Our data demonstrate the local impact of atomic defects on the Rashba effect, which is both a challenge and an opportunity for the development of future nanoscale spintronic devices.
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Submitted 28 March, 2024; v1 submitted 28 February, 2024;
originally announced February 2024.
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Arrow: A RISC-V Vector Accelerator for Machine Learning Inference
Authors:
Imad Al Assir,
Mohamad El Iskandarani,
Hadi Rayan Al Sandid,
Mazen A. R. Saghir
Abstract:
In this paper we present Arrow, a configurable hardware accelerator architecture that implements a subset of the RISC-V v0.9 vector ISA extension aimed at edge machine learning inference. Our experimental results show that an Arrow co-processor can execute a suite of vector and matrix benchmarks fundamental to machine learning inference 2 - 78x faster than a scalar RISC processor while consuming 2…
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In this paper we present Arrow, a configurable hardware accelerator architecture that implements a subset of the RISC-V v0.9 vector ISA extension aimed at edge machine learning inference. Our experimental results show that an Arrow co-processor can execute a suite of vector and matrix benchmarks fundamental to machine learning inference 2 - 78x faster than a scalar RISC processor while consuming 20% - 99% less energy when implemented in a Xilinx XC7A200T-1SBG484C FPGA.
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Submitted 15 July, 2021;
originally announced July 2021.
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Nanomaterials of the topological crystalline insulators, Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se
Authors:
M Saghir,
A. M. Sanchez,
S. A. Hindmarsh,
S. J. York,
G. Balakrishnan
Abstract:
Topological insulators (TIs) and topological crystal insulators (TCIs) exhibit exotic surface properties. We present optimised growth procedures to obtain high quality bulk crystals of the TCIs Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se, and nanowires from the bulk crystals using the vapour-liquid-solid (VLS) technique. Nanowires of Pb_(1-x)Sn_(x)Te have been produced with a Sn composition of approx. x…
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Topological insulators (TIs) and topological crystal insulators (TCIs) exhibit exotic surface properties. We present optimised growth procedures to obtain high quality bulk crystals of the TCIs Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se, and nanowires from the bulk crystals using the vapour-liquid-solid (VLS) technique. Nanowires of Pb_(1-x)Sn_(x)Te have been produced with a Sn composition of approx. x = 0.25, at which a transition from trivial to non-trivial insulator is reported. The results obtained on the growth of nanomaterials of Pb_(1-x)Sn_(x)Se are also described. Detailed characterisation of the bulk crystals and the nanomaterials through x-ray diffraction, microscopy techniques and EDX analysis are presented.
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Submitted 20 November, 2015;
originally announced November 2015.
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Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator
Authors:
C. M. Polley,
V. Jovic,
T. -Y. Su,
M. Saghir,
D. Newby Jr.,
B. Kowalski,
R. Jakiela,
A. Barcz,
M. Guziewicz,
T. Balasubramanian,
G. Balakrishnan,
J. Laverock,
K. E. Smith
Abstract:
The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to $x\approx0.4$), a…
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The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to $x\approx0.4$), a regime where the superconducting temperature is increased nearly fourfold. We demonstrate that despite strong p-type doping, Dirac-like surface states persist.
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Submitted 18 February, 2016; v1 submitted 16 August, 2015;
originally announced August 2015.
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Studies of the superconducting properties of Sn1-xInxTe (x=0.38 to 0.45) using muon-spin spectroscopy
Authors:
M. Saghir,
J. A. T. Barker,
G. Balakrishnan,
A. D. Hillier,
M. R. Lees
Abstract:
The superconducting properties of Sn1-xInxTe (x = 0.38 to 0.45) have been studied using magnetization and muon-spin rotation or relaxation (muSR) measurements. These measurements show that the superconducting critical temperature Tc of Sn1-xInxTe increases with increasing x, reaching a maximum at around 4.8 K for x = 0.45. Zero-field muSR results indicate that time-reversal symmetry is preserved i…
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The superconducting properties of Sn1-xInxTe (x = 0.38 to 0.45) have been studied using magnetization and muon-spin rotation or relaxation (muSR) measurements. These measurements show that the superconducting critical temperature Tc of Sn1-xInxTe increases with increasing x, reaching a maximum at around 4.8 K for x = 0.45. Zero-field muSR results indicate that time-reversal symmetry is preserved in this material. Transverse-field muon-spin rotation has been used to study the temperature dependence of the magnetic penetration depth lambda(T) in the mixed state. For all the compositions studied, lambda(T) can be well described using a single-gap s-wave BCS model. The magnetic penetration depth at zero temperature lambda(0) ranges from 500 to 580 nm. Both the superconducting gap Delta(0) at 0 K and the gap ratio Delta(0)/kBTc indicate that Sn1-xInxTe (x = 0.38 to 0.45) should be considered as a superconductor with intermediate to strong coupling.
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Submitted 29 September, 2014; v1 submitted 21 June, 2014;
originally announced June 2014.
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Synthesis and characterisation of nanomaterials of the topological crystalline insulator SnTe
Authors:
M. Saghir,
M. R. Lees,
S. J. York,
G. Balakrishnan
Abstract:
A new class of materials, Topological Crystalline Insulators (TCIs) have been shown to possess exotic surface state properties that are protected by mirror symmetry. These surface features can be enhanced if the surface-area-to-volume ratio of the material increases, or the signal arising from the bulk of the material can be suppressed. We report the experimental procedures to obtain high quality…
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A new class of materials, Topological Crystalline Insulators (TCIs) have been shown to possess exotic surface state properties that are protected by mirror symmetry. These surface features can be enhanced if the surface-area-to-volume ratio of the material increases, or the signal arising from the bulk of the material can be suppressed. We report the experimental procedures to obtain high quality crystal boules of the TCI, SnTe, from which nanowires and microcrystals can be produced by the vapour-liquid-solid (VLS) technique. Detailed characterisation measurements of the bulk crystals as well as of the nanowires and microcrystals produced are presented. The nanomaterials produced were found to be stoichiometrically similar to the source material used. Electron back-scatter diffraction (EBSD) shows that the majority of the nanocrystals grow in the vicinal {001} direction to the growth normal. The growth conditions to produce the different nanostructures of SnTe have been optimised.
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Submitted 3 April, 2014;
originally announced April 2014.
