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Non-Ergodic-Induced Negative Differential Piezoresponse in Relaxor Ferroelectrics
Authors:
Cecile Saguy,
Benjamin Kowalski,
Alp Sehirlioglu,
Yachin Ivry
Abstract:
Relaxor ferroelectrics exhibit a unique competition between long-range and short-range interactions that can be tuned electrically which prioritizes these materials in a broad range of electro-mechanical energy-conversion technologies, including biomedical imaging and electric-charge generators. Here, we demonstrate differential negative piezoresponse by utilizing the short-range interactions in r…
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Relaxor ferroelectrics exhibit a unique competition between long-range and short-range interactions that can be tuned electrically which prioritizes these materials in a broad range of electro-mechanical energy-conversion technologies, including biomedical imaging and electric-charge generators. Here, we demonstrate differential negative piezoresponse by utilizing the short-range interactions in relaxor ferroelectrics. The effect was observed over a broad temperature range with local piezoresponse spectroscopy in unpoled samples, while no negative piezoresponse was observed when the material was pre-scan poled. These measurements suggest that the effect, that is promising for power-generation applications, originates from non-ergodic behavior. Complementary macroscale impedance and dielectric constant measurements as a function of temperature and frequency supported the mesoscopic findings. Bearing in mind the direct relationship between piezoresponse and capacitance, relaxor ferroelectrics appear as an excellent platform for the emerging technology of low-power negative-capacitance transistors.
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Submitted 17 June, 2024;
originally announced June 2024.
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Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Authors:
Jakub Iwański,
Krzysztof P. Korona,
Mateusz Tokarczyk,
Grzegorz Kowalski,
Aleksandra K. Dąbrowska,
Piotr Tatarczak,
Izabela Rogala,
Marta Bilska,
Maciej Wójcik,
Sławomir Kret,
Anna Reszka,
Bogdan J. Kowalski,
Song Li,
Anton Pershin,
Adam Gali,
Johannes Binder,
Andrzej Wysmołek
Abstract:
Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN atomic planes can also arrange in other configurations like Bernal (bBN) or rhombohedral (rBN) stacking orders. Variations in the orientation and translation of…
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Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN atomic planes can also arrange in other configurations like Bernal (bBN) or rhombohedral (rBN) stacking orders. Variations in the orientation and translation of successive atomic layers lead to changes in crystal symmetry, potentially resulting in piezoelectric, pyroelectric or ferroelectric effects. However, distinguishing between different polytypes using conventional methods like X-ray diffraction or Raman spectroscopy presents a significant challenge. In this work, we demonstrate that the optical response of the 4.1 eV defect can serve as an indicator of the polytype. To this end, we study BN samples grown by metalorganic vapor phase epitaxy (MOVPE), which contain different polytypes. The identification of the polytypes was achieved by X-ray diffraction and transmission electron microscopy. Photoluminescence and cathodoluminescence measurements with a high spatial resolution allowed for the deconvolution of the signal into two components from which we can extract a zero-phonon line (ZPL) at 4.096 eV (302.6 nm) for hBN and 4.143 eV (299.2 nm) for rBN. We performed calculations that enable us to identify the defect as a carbon dimer CBCN (C2) and show that the ZPL shift reflects differences in the crystal environment for different polytypes. Furthermore, we demonstrate that different polytypic composition ratios of hBN and rBN can be achieved by MOVPE, which could pave the way for future applications in large-area van der Waals heterostructures.
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Submitted 29 May, 2024;
originally announced May 2024.
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Emergent impervious band crossing in the bulk in topological nodal line semimetal ZrAs$_2$
Authors:
A. S. Wadge,
K. Zberecki,
B. J. Kowalski,
D. Jastrzebski,
P. K. Tanwar,
P. Iwanowski,
R. Diduszko,
A. Moosarikandy,
M. Rosmus,
N. Olszowska,
A. Wisniewski
Abstract:
Topological nodal line semimetals (TSMs) represent a unique class of materials with intriguing electronic structures and rich of symmetries, hosting electronic states with non-trivial topological properties. Among these, ZrAs$_2$ stands out, characterized by its nodal lines forming continuous loops in momentum space, governed by non-symmorphic symmetries. This study integrates angle-resolved photo…
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Topological nodal line semimetals (TSMs) represent a unique class of materials with intriguing electronic structures and rich of symmetries, hosting electronic states with non-trivial topological properties. Among these, ZrAs$_2$ stands out, characterized by its nodal lines forming continuous loops in momentum space, governed by non-symmorphic symmetries. This study integrates angle-resolved photoemission spectroscopy (ARPES) with density functional theory (DFT) calculations to explore the electronic states of ZrAs$_2$. In ARPES scans, we observed a distinctive nodal loop structure observed at lower excitation energies of 30 and 50 eV. Our results, supported by calculations based on DFT, unveil symmetry-enforced Dirac-like band crossings anchored at specific points in the Brillouin zone, with particular emphasis on the S point. Surface bands and bulk states near the crossing are elucidated through slab calculations, corroborating experimental findings. DFT calculations also show the existence of several spin-orbit coupling (SOC) resilient semi-Dirac crossings pinned at Z point. This comprehensive investigation sheds light on the intricate electronic behaviors of ZrAs$_2$ with the involved symmetries, important for fundamental understanding of topological nodal line semimetals.
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Submitted 7 March, 2024;
originally announced March 2024.
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Topological Lifshitz transition in Weyl semimetal NbP decorated with heavy elements
Authors:
Ashutosh S Wadge,
Bogdan J Kowalski,
Carmine Autieri,
Przemysław Iwanowski,
Andrzej Hruban,
Natalia Olszowska,
Marcin Rosmus,
Jacek Kołodziej,
Andrzej Wiśniewski
Abstract:
Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cle…
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Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cleaving planes is different: P-terminated surface shows spoon and bow tie shaped fingerprints, whereas these shapes are not present in Nb-terminated surfaces. ARPES studies show that even 1 monolayer (ML) of Pb causes topological quantum Lifshitz transition (TQLT) in P- and Nb-terminated surfaces. Deposited Pb 5d electrons have wide extended atomic orbitals which leads to strong hybridization with Pb-terminated surface and a corresponding shift in the Fermi energy. Nb has less capability to perturb the system than Pb because Nb has weaker spin-orbit coupling than Pb. Nb-terminated surface subjected to surface decoration with approximately 1.3 ML of Nb shows no dramatic modification in the Fermi surface. In the case of Nb decorated P-terminated surface, deposition of approximately 1 ML modifies the electronic structure of NbP and it is on the verge of TQLT. Despite the strong spin-orbit and strong hybridization of the heavy elements on the surface, it is possible to observe the TQLT of the surface states thanks to the robustness of the bulk topology.
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Submitted 4 July, 2022; v1 submitted 12 February, 2022;
originally announced February 2022.
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Transoceanic Phase and Polarization Fiber Sensing using Real-Time Coherent Transceiver
Authors:
Mikael Mazur,
Jorge C. Castellanos,
Roland Ryf,
Erik Borjeson,
Tracy Chodkiewicz,
Valey Kamalov,
Shuang Yin,
Nicolas K. Fontaine,
Haoshuo Chen,
Lauren Dallachiesa,
Steve Corteselli,
Philip Copping,
Jurgen Gripp,
Aurelien Mortelette,
Benoit Kowalski,
Rodney Dellinger,
David T. Neilson,
Per Larsson-Edefors
Abstract:
We implement a real-time coherent transceiver with fast streaming outputs for environmental sensing. Continuous sensing using phase and equalizer outputs over 12800km of a submarine cable is demonstrated to enable time resolved spectroscopy in broad spectral range of 10mHz - 1kHz.
We implement a real-time coherent transceiver with fast streaming outputs for environmental sensing. Continuous sensing using phase and equalizer outputs over 12800km of a submarine cable is demonstrated to enable time resolved spectroscopy in broad spectral range of 10mHz - 1kHz.
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Submitted 14 September, 2021;
originally announced September 2021.
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Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires
Authors:
Piotr Wojnar,
Jakub Plachta,
Anna Reszka,
Jonas Lahnemann,
Anna Kaleta,
Slawomir Kret,
Piotr Baranowski,
Maciej Wojcik,
Bogdan J. Kowalski,
Lech T. Baczewski,
Grzegorz Karczewski,
Tomasz Wojtowicz
Abstract:
ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalysts. A photoluminescence study of these structures reveals the presence of an optical emission in the near infrared. We assign this emission to the spatially indirect exciton recombination at the ZnTe/CdSe type II interface. This conclusi…
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ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalysts. A photoluminescence study of these structures reveals the presence of an optical emission in the near infrared. We assign this emission to the spatially indirect exciton recombination at the ZnTe/CdSe type II interface. This conclusion is confirmed by the observation of a significant blue-shift of the emission energy with an increasing excitation fluence induced by the electron-hole separation at the interface. Cathodoluminescence measurements reveal that the optical emission in the near infrared originates from nanowires and not from two dimensional residual deposits between them. Moreover, it is demonstrated that the emission energy in the near infrared depends on the average CdSe shell thickness and the average Mg concentration within the (Zn,Mg)Te shell. The main mechanism responsible for these changes is associated with the strain induced by the (Zn,Mg)Te shell in the entire core/shell nanowire heterostructure.
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Submitted 1 September, 2021;
originally announced September 2021.
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Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ Superlattices
Authors:
Joanna Sitnicka,
Kyungwha Park,
Paweł Skupiński,
Krzysztof Grasza,
Anna Reszka,
Kamil Sobczak,
Jolanta Borysiuk,
Zbigniew Adamus,
Mateusz Tokarczyk,
Andrei Avdonin,
Irina Fedorchenko,
Irina Abaloszewa,
Sylwia Turczyniak-Surdacka,
Natalia Olszowska,
Jacek Kolodziej,
Bogdan J. Kowalski,
Haiming Deng,
Marcin Konczykowski,
Lia Krusin-Elbaum,
Agnieszka Wolos
Abstract:
MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compos…
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MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compositional, and magnetic metrics of disorder in ferromagnetic MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ it is found that migration of Mn between MnBi$_{2}$T$e_{4}$ septuple layers (SLs) and otherwise non-magnetic Bi$_{2}$Te$_{3}$ quintuple layers (QLs) has systemic consequences - it induces ferromagnetic coupling of Mn-depleted SLs with Mn-doped QLs, seen in ferromagnetic resonance as an acoustic and optical resonance mode of the two coupled spin subsystems. Even for a large SL separation (n $\gtrsim$ 4 QLs) the structure cannot be considered as a stack of uncoupled two-dimensional layers. Angle-resolved photoemission spectroscopy and density functional theory studies show that Mn disorder within an SL causes delocalization of electron wavefunctions and a change of the surface bandstructure as compared to the ideal MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$. These findings highlight the critical importance of inter- and intra-SL disorder towards achieving new QAH platforms as well as exploring novel axion physics in intrinsic topological magnets.
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Submitted 9 September, 2021; v1 submitted 31 August, 2021;
originally announced September 2021.
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Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES
Authors:
A. S. Wadge,
G. Grabecki,
C. Autieri,
B. J. Kowalski,
P. Iwanowski,
G. Cuono,
M. F. Islam,
C. M. Canali,
K. Dybko,
A. Hruban,
A. Łusakowski,
T. Wojciechowski,
R. Diduszko,
A. Lynnyk,
N. Olszowska,
M. Rosmus,
J. Kołodziej,
A. Wiśniewski
Abstract:
We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$…
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We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-doping of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.
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Submitted 10 January, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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Conductance spectra of (Nb, Pb, In)/NbP -- superconductor/Weyl semimetal junctions
Authors:
G. Grabecki,
A. Dąbrowski,
P. Iwanowski,
A. Hruban,
B. J. Kowalski,
N. Olszowska,
J. Kołodziej,
M. Chojnacki,
K. Dybko,
A. Łusakowski,
T. Wojtowicz,
T. Wojciechowski,
R. Jakieła,
A. Wiśniewski
Abstract:
The possibility of inducing superconductivity in type-I Weyl semimetal through coupling its surface to a superconductor was investigated. A single crystal of NbP, grown by chemical vapor transport method, was carefully characterized by XRD, EDX, SEM, ARPES techniques and by electron transport measurements. The mobility spectrum of the carriers was determined. For the studies of interface transmiss…
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The possibility of inducing superconductivity in type-I Weyl semimetal through coupling its surface to a superconductor was investigated. A single crystal of NbP, grown by chemical vapor transport method, was carefully characterized by XRD, EDX, SEM, ARPES techniques and by electron transport measurements. The mobility spectrum of the carriers was determined. For the studies of interface transmission, the (001) surface of the crystal was covered by several hundred nm thick metallic layers of either Pb, or Nb, or In. DC current-voltage characteristics and AC differential conductance through the interfaces as a function of the DC bias were investigated. When the metals become superconducting, all three types of junctions show conductance increase, pointing out the Andreev reflection as a prevalent contribution to the subgap conductance. In the case of Pb-NbP and Nb-NbP junctions, the effect is satisfactorily described by modified Blonder-Tinkham-Klapwijk model. The absolute value of the conductance is much smaller than that for the bulk crystal, indicating that the transmission occurs through only a small part of the contact area. An opposite situation occurs in In-NbP junction, where the conductance at the peak reaches the bulk value indicating that almost whole contact area is transmitting and, additionally, a superconducting proximity phase is formed in the material. We interpret this as a result of indium diffusion into NbP, where the metal atoms penetrate the surface barrier and form very transparent superconductor-Weyl semimetal contact inside. However, further diffusion occurring already at room temperature leads to degradation of the effect, so it is observed only in the pristine structures. Despite of this, our observation directly demonstrates possibility of inducing superconductivity in a type-I Weyl semimetal.
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Submitted 20 January, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Using SWISH to realise interactive web based tutorials for logic based languages
Authors:
Jan Wielemaker,
Fabrizio Riguzzi,
Bob Kowalski,
Torbjörn Lager,
Fariba Sadri,
Miguel Calejo
Abstract:
Programming environments have evolved from purely text based to using graphical user interfaces, and now we see a move towards web based interfaces, such as Jupyter. Web based interfaces allow for the creation of interactive documents that consist of text and programs, as well as their output. The output can be rendered using web technology as, e.g., text, tables, charts or graphs. This approach i…
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Programming environments have evolved from purely text based to using graphical user interfaces, and now we see a move towards web based interfaces, such as Jupyter. Web based interfaces allow for the creation of interactive documents that consist of text and programs, as well as their output. The output can be rendered using web technology as, e.g., text, tables, charts or graphs. This approach is particularly suitable for capturing data analysis workflows and creating interactive educational material. This article describes SWISH, a web front-end for Prolog that consists of a web server implemented in SWI-Prolog and a client web application written in JavaScript. SWISH provides a web server where multiple users can manipulate and run the same material, and it can be adapted to support Prolog extensions. In this paper we describe the architecture of SWISH, and describe two case studies of extensions of Prolog, namely Probabilistic Logic Programming (PLP) and Logic Production System (LPS), which have used SWISH to provide tutorial sites.
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Submitted 30 January, 2020; v1 submitted 24 August, 2018;
originally announced August 2018.
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Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
Authors:
Craig M. Polley,
Ryszard Buczko,
Alexander Forsman,
Piotr Dziawa,
Andrzej Szczerbakow,
Rafał Rechciński,
Bogdan J. Kowalski,
Tomasz Story,
Małgorzata Trzyna,
Marco Bianchi,
Antonija Grubišić Čabo,
Philip Hofmann,
Oscar Tjernberg,
Thiagarajan Balasubramanian
Abstract:
The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb$_{1-x}$Sn$_{x}$Se feature degeneracies located away from time reversal invariant momenta, and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis f…
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The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb$_{1-x}$Sn$_{x}$Se feature degeneracies located away from time reversal invariant momenta, and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis for a topological transistor, but realizing such a device will require a detailed understanding of the intervalley physics involved. In addition, the operation of this or similar devices outside of ultra-high vacuum will require encapsulation, and the consequences of this for the topological interface state must be understood. Here we address both topics for the case of 2D surface states using angle-resolved photoemission spectroscopy. We examine bulk Pb$_{1-x}$Sn$_{x}$Se(001) crystals overgrown with PbSe, realizing trivial/topological heterostructures. We demonstrate that the valley interaction that splits the two Dirac cones at each $\bar{X}$ is extremely sensitive to atomic-scale details of the surface, exhibiting non-monotonic changes as PbSe deposition proceeds. This includes an apparent total collapse of the splitting for sub-monolayer coverage, eliminating the Lifshitz transition. For a large overlayer thickness we observe quantized PbSe states, possibly reflecting a symmetry confinement mechanism at the buried topological interface.
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Submitted 21 December, 2017;
originally announced December 2017.
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Patterning nonisometric origami in nematic elastomer sheets
Authors:
Paul Plucinsky,
Benjamin A. Kowalski,
Timothy J. White,
Kaushik Bhattacharya
Abstract:
Nematic elastomers dramatically change their shape in response to diverse stimuli including light and heat. In this paper, we provide a systematic framework for the design of complex three dimensional shapes through the actuation of heterogeneously patterned nematic elastomer sheets. These sheets are composed of \textit{nonisometric origami} building blocks which, when appropriately linked togethe…
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Nematic elastomers dramatically change their shape in response to diverse stimuli including light and heat. In this paper, we provide a systematic framework for the design of complex three dimensional shapes through the actuation of heterogeneously patterned nematic elastomer sheets. These sheets are composed of \textit{nonisometric origami} building blocks which, when appropriately linked together, can actuate into a diverse array of three dimensional faceted shapes. We demonstrate both theoretically and experimentally that: 1) the nonisometric origami building blocks actuate in the predicted manner, 2) the integration of multiple building blocks leads to complex multi-stable, yet predictable, shapes, 3) we can bias the actuation experimentally to obtain a desired complex shape amongst the multi-stable shapes. We then show that this experimentally realized functionality enables a rich possible design landscape for actuation using nematic elastomers. We highlight this landscape through theoretical examples, which utilize large arrays of these building blocks to realize a desired three dimensional origami shape. In combination, these results amount to an engineering design principle, which we hope will provide a template for the application of nematic elastomers to emerging technologies.
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Submitted 7 March, 2018; v1 submitted 12 December, 2017;
originally announced December 2017.
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Curvature by design and on demand in liquid crystal elastomers
Authors:
Benjamin A. Kowalski,
Cyrus Mostajeran,
Nicholas P. Godman,
Mark Warner,
Timothy J. White
Abstract:
The shape of liquid crystalline elastomers (LCEs) with spatial variation in the director orientation can be transformed by exposure to a stimulus. Here, informed by previously reported analytical treatments, we prepare complex spiral patterns imprinted into LCEs and quantify the resulting shape transformation. Quantification of the stimuli-induced shapes reveals good agreement between predicted an…
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The shape of liquid crystalline elastomers (LCEs) with spatial variation in the director orientation can be transformed by exposure to a stimulus. Here, informed by previously reported analytical treatments, we prepare complex spiral patterns imprinted into LCEs and quantify the resulting shape transformation. Quantification of the stimuli-induced shapes reveals good agreement between predicted and experimentally observed curvatures. We conclude this communication by reporting a design strategy to allow LCE films to be anchored at their external boundaries onto rigid substrates without incurring internal, mechanical-mismatch stresses upon actuation, a critical advance to the realization of shape transformation of LCEs in practical device applications.
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Submitted 22 November, 2017;
originally announced November 2017.
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Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator
Authors:
C. M. Polley,
V. Jovic,
T. -Y. Su,
M. Saghir,
D. Newby Jr.,
B. Kowalski,
R. Jakiela,
A. Barcz,
M. Guziewicz,
T. Balasubramanian,
G. Balakrishnan,
J. Laverock,
K. E. Smith
Abstract:
The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to $x\approx0.4$), a…
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The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to $x\approx0.4$), a regime where the superconducting temperature is increased nearly fourfold. We demonstrate that despite strong p-type doping, Dirac-like surface states persist.
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Submitted 18 February, 2016; v1 submitted 16 August, 2015;
originally announced August 2015.
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Direct observation and temperature control of the surface Dirac gap in the topological crystalline insulator (Pb,Sn)Se
Authors:
B. M. Wojek,
M. H. Berntsen,
V. Jonsson,
A. Szczerbakow,
P. Dziawa,
B. J. Kowalski,
T. Story,
O. Tjernberg
Abstract:
Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators (TCIs) where the topological states are protected by real space crystal symmetries and thus prone to gap formation by structural changes of th…
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Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators (TCIs) where the topological states are protected by real space crystal symmetries and thus prone to gap formation by structural changes of the lattice. Here, we show for the first time a temperature-driven gap opening in Dirac surface states within the TCI phase in (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gap formation and mass acquisition is studied as a function of composition and temperature. The resulting observations lead to the addition of a temperature- and composition-dependent boundary between massless and massive Dirac states in the topological phase diagram for (Pb,Sn)Se (001). Overall, our results experimentally establish the possibility to tune between a massless and massive topological state on the surface of a topological system.
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Submitted 13 May, 2015;
originally announced May 2015.
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Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System
Authors:
A. Podgórni,
L. Kilanski,
W. Dobrowolski,
M. Górska,
V. Domukhovski,
B. Brodowska,
A. Reszka,
B. J. Kowalski,
V. E. Slynko,
E. I. Slynko
Abstract:
The purpose of this study was to investigate the magnetotransport properties of the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature TSG = 97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a…
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The purpose of this study was to investigate the magnetotransport properties of the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature TSG = 97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p = 6.6E20 cm-3, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect (AHE) with hysteresis loops. Calculated AHE coefficient, RS = 2.0E6 m3/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for AHE in Ge(0.743)Pb(0.183)Mn(0.074)Te alloy.
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Submitted 20 June, 2014;
originally announced June 2014.
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On the nature of the band inversion and the topological phase transition in (Pb,Sn)Se
Authors:
B. M. Wojek,
P. Dziawa,
B. J. Kowalski,
A. Szczerbakow,
A. M. Black-Schaffer,
M. H. Berntsen,
T. Balasubramanian,
T. Story,
O. Tjernberg
Abstract:
The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the…
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The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the surface-state observations, we monitor directly the topological phase transition in this solid solution and gain valuable information on the evolution of the underlying fundamental band gap of the system. In contrast to common model expectations, the band-gap evolution appears to be nonlinear as a function of the studied parameters, resulting in the measuring of a discontinuous band inversion process. This finding signifies that the anticipated gapless bulk state is in fact not a stable configuration and that the topological phase transition therefore exhibits features akin to a first-order transition.
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Submitted 21 September, 2014; v1 submitted 26 January, 2014;
originally announced January 2014.
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Observation of topological crystalline insulator surface states on (111)-oriented Pb$_{1-x}$Sn$_{x}$Se films
Authors:
C. M. Polley,
P. Dziawa,
A. Reszka,
A. Szczerbakow,
R. Minikayev,
J. Z. Domagala,
S. Safaei,
P. Kacman,
R. Buczko,
J. Adell,
M. H. Berntsen,
B. M. Wojek,
O. Tjernberg,
B. J. Kowalski,
T. Story,
T. Balasubramanian
Abstract:
We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\barΓ$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the…
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We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\barΓ$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the parallel dispersion isotropy and Dirac-point binding energy of the surface states, and perform tight-binding calculations to support our findings. The relative simplicity of the growth technique is encouraging, and suggests a clear path for future investigations into the role of strain, vicinality and alternative surface orientations in (Pb,Sn)Se compounds.
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Submitted 11 December, 2013;
originally announced December 2013.
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Spin-polarized (001) surface states of the topological crystalline insulator Pb_{0.73}Sn_{0.27}Se
Authors:
B. M. Wojek,
R. Buczko,
S. Safaei,
P. Dziawa,
B. J. Kowalski,
M. H. Berntsen,
T. Balasubramanian,
M. Leandersson,
A. Szczerbakow,
P. Kacman,
T. Story,
O. Tjernberg
Abstract:
We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states wi…
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We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states with nonzero spin polarization when the system is a normal insulator. For both phases, angle- and spin-resolved photoelectron spectroscopy measurements provide conclusive evidence for the formation of these (001) surface states in Pb_{0.73}Sn_{0.27}Se, as well as for their chiral spin structure.
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Submitted 8 December, 2012;
originally announced December 2012.
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Spinodal Decomposition of Magnetic Ions in Eu-Codoped Ge/1-x/Cr/x/Te
Authors:
A. Podgórni,
L. Kilanski,
W. Dobrowolski,
M. Górska,
A. Reszka,
V. Domukhovski,
B. J. Kowalski,
B. Brodowska,
J. R. Anderson,
N. P. Butch,
V. E. Slynko,
E. I. Slynko
Abstract:
We present the experimental evidence for the presence of spinodal decomposition of the magnetic ions in the Ge/1-x-y/Cr/x/Eu/y/Te samples with chemical composition varying in the range of 0.015 < x < 0.057 and 0.003 < y < 0.042. The ferromagnetic transition at temperatures 50 < T < 57 K was observed, independent of the chemical composition. The long-range carrier mediated itinerant magnetic intera…
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We present the experimental evidence for the presence of spinodal decomposition of the magnetic ions in the Ge/1-x-y/Cr/x/Eu/y/Te samples with chemical composition varying in the range of 0.015 < x < 0.057 and 0.003 < y < 0.042. The ferromagnetic transition at temperatures 50 < T < 57 K was observed, independent of the chemical composition. The long-range carrier mediated itinerant magnetic interactions seem to be responsible for the observed ferromagnetic order. The magnetic irreversibility with coercive field H/C/ = 5?63 mT and the saturation magnetization M/S/ <? 2?6 emu/g are found to strongly depend on the chemical composition of the alloy.
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Submitted 4 December, 2012;
originally announced December 2012.
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Topological crystalline insulator states in Pb(1-x)Sn(x)Se
Authors:
P. Dziawa,
B. J. Kowalski,
K. Dybko,
R. Buczko,
A. Szczerbakow,
M. Szot,
E. Łusakowska,
T. Balasubramanian,
B. M. Wojek,
M. H. Berntsen,
O. Tjernberg,
T. Story
Abstract:
Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested th…
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Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions.
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Submitted 15 August, 2013; v1 submitted 8 June, 2012;
originally announced June 2012.
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Magnetic Interactions in Ge/1-x/Cr/x/Te Semimagnetic Semiconductors
Authors:
L. Kilanski,
A. Podgórni,
W. Dobrowolski,
M. Górska,
B. J. Kowalski,
A. Reszka,
V. Domukhovski,
A. Szczerbakow,
K. Szałowski,
J. R. Anderson,
N. P. Butch,
V. E. Slynko,
E. I. Slynko
Abstract:
We present the studies of magnetic properties of Ge/1-x/Cr/x/Te diluted magnetic semiconductor with changeable chemical composition 0.016 \leq x \leq 0.061. A spin-glass state (at T \leq 35 K) for x = 0.016 and 0.025 and a ferromagnetic phase (at T < 60 K) for x \geq 0.030 are observed. The long range carrier-mediated magnetic interactions are found to be responsible for the observed magnetic orde…
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We present the studies of magnetic properties of Ge/1-x/Cr/x/Te diluted magnetic semiconductor with changeable chemical composition 0.016 \leq x \leq 0.061. A spin-glass state (at T \leq 35 K) for x = 0.016 and 0.025 and a ferromagnetic phase (at T < 60 K) for x \geq 0.030 are observed. The long range carrier-mediated magnetic interactions are found to be responsible for the observed magnetic ordering for x < 0.045, while for x \geq 0.045 the spinodal decomposition of Cr ions leads to a maximum and decrease of the Curie temperature, TC, with increasing x. The calculations based on spin waves model are able to reproduce the observed magnetic properties at a homogeneous limit of Cr alloying, e.g. x < 0.04, and prove that carrier mediated Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction is responsible for the observed magnetic states. The value of the Cr-hole exchange integral, Jpd, estimated via fitting of the experimental results with the theoretical model, is in the limits 0.77...0.88 eV.
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Submitted 9 October, 2012; v1 submitted 14 March, 2012;
originally announced March 2012.
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ZnCoO Films by Atomic Layer Deposition - influence of a growth temperature on uniformity of cobalt distribution
Authors:
M. I. Lukasiewicz,
B. Witkowski,
M. Godlewski,
E. Guziewicz,
M. Sawicki,
W. Paszkowicz,
E. Lusakowska,
R. Jakiela,
T. Krajewski,
I. A. Kowalik,
B. J. Kowalski
Abstract:
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 30…
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We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300oC and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of SIMS, SEM, EDS, XRD, AFM, Hall effect and SQUID investigations.
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Submitted 26 July, 2011;
originally announced July 2011.
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MnAs dots grown on GaN(0001)-(1x1) surface
Authors:
I. A. Kowalik,
B. J. Kowalski,
R. J. Iwanowski,
K. Kopalko,
E. Łusakowska,
M. Sawicki
Abstract:
MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1$\cdot 10^{11}$ cm$^{-2}$ and…
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MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1$\cdot 10^{11}$ cm$^{-2}$ and $2.5\cdot 10^{11}$ cm$^{-2}$, respectively (as observed by AFM), occurred for the layer thickness higher than 5 ML. Electronic structure of the MnAs/GaN systems was studied by resonant photoemission spectroscopy. That led to determination of the Mn 3d - related contribution to the total density of states (DOS) distribution of MnAs. It has been proven that the electronic structures of the MnAs dots grown by the two procedures differ markedly. One corresponds to metallic, ferromagnetic NiAs-type MnAs, the other is similar to that reported for half-metallic zinc-blende MnAs. Both system behave superparamagnetically (as revealed by magnetization measurements), but with both the blocking temperatures and the intra-dot Curie temperatures substantially different. The intra-dot Curie temperature is about 260 K for the former system while markedly higher than room temperature for the latter one. Relations between growth process, electronic structure and other properties of the studied systems are discussed. Possible mechanisms of half-metallic MnAs formation on GaN are considered.
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Submitted 19 February, 2007;
originally announced February 2007.
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MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
Authors:
B. J. Kowalski,
I. A. Kowalik,
R. J. Iwanowski,
E. Lusakowska,
M. Sawicki,
J. Sadowski,
I. Grzegory,
S. Porowski
Abstract:
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.
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Submitted 28 October, 2004; v1 submitted 5 August, 2004;
originally announced August 2004.
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Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
Authors:
B. J. Kowalski,
I. A. Kowalik,
R. J. Iwanowski,
J. Sadowski,
J. Kanski,
B. A. Orlowski,
J. Ghijsen,
F. Mirabella,
E. Lusakowska,
P. Perlin,
S. Porowski,
I. Grzegory,
M. Leszczynski
Abstract:
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface…
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The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface subjected to similar ion etching was proven by means of X-ray photoemission spectroscopy.
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Submitted 4 August, 2004;
originally announced August 2004.
