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Electronic bandstructure of superconducting KTaO3 (111) interfaces
Authors:
Srijani Mallik,
Börge Göbel,
Hugo Witt,
Luis M. Vicente-Arche,
Sara Varotto,
Julien Bréhin,
Gerbold Ménard,
Guilhem Saïz,
Dyhia Tamsaout,
Andrés Felipe Santander-Syro,
Franck Fortuna,
François Bertran,
Patrick Le Fèvre,
Julien Rault,
Isabella Boventer,
Ingrid Mertig,
Agnès Barthélémy,
Nicolas Bergeal,
Annika Johansson,
Manuel Bibes
Abstract:
Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orient…
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Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orientations has already been mapped using angle-resolved photoemission spectroscopy(ARPES), this is not the case for superconducting KTaO3 2DEGs. Here, we reveal the electronic structure of superconducting 2DEGs based on KTaO3 (111) single crystals through ARPES measurements. We fit the data with a tight-binding model and compute the associated spin textures to bring insight into the SOC-driven physics of this fascinating system.
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Submitted 14 November, 2023;
originally announced November 2023.
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Quantifying the large contribution from orbital Rashba effect to the effective damping-like torque on magnetization
Authors:
S. Krishnia,
B. Bony,
E. Rongione,
L. Moreno Vicente-Arche,
T. Denneulin,
Y. Lu,
R. E. Dunin-Borkowski,
S. Collin,
A. Fert,
J. -M. George,
N. Reyren,
V. Cros,
H. Jaffrès
Abstract:
The generation of large spin currents, and the associated spin torques, which are at the heart of modern spintronics, have long been achieved by charge-to-spin conversion mechanisms, i.e. the spin Hall effect and/or the Rashba effect, intrinsically linked to a strong spin-orbit coupling. Recently, a novel path has been predicted and observed for achieving significant current-induced torques origin…
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The generation of large spin currents, and the associated spin torques, which are at the heart of modern spintronics, have long been achieved by charge-to-spin conversion mechanisms, i.e. the spin Hall effect and/or the Rashba effect, intrinsically linked to a strong spin-orbit coupling. Recently, a novel path has been predicted and observed for achieving significant current-induced torques originating from light elements, hence possessing a weak spin-orbit interaction. These findings point out to the potential involvement of the orbital counterpart of electrons, namely the orbital Hall and orbital Rashba effects. In this study, we aim at quantifying these orbital-related contributions to the effective torques acting on a thin Co layer in different systems. First, in Pt|Co|Cu|AlOx stacking, we demonstrate a comparable torque strength coming from the conversion due to the orbital Rashba effect at the Cu|AlOx interface and the one from the effective spin Hall effect in bottom Pt|Co system. Secondly, in order to amplify the orbital-to-spin conversion, we investigate the impact of an intermediate Pt layer in Co|Pt|Cu|CuOx. From the Pt thickness dependence of the effective torques determined by harmonic Hall measurements complemented by spin Hall magneto-resistance and THz spectroscopy experiments, we demonstrate that a large orbital Rashba effect is present at the Cu|CuOx interface, leading to a twofold enhancement of the net torques on Co for the optimal Pt thickness. Our findings not only demonstrate the crucial role that orbital currents can play in low-dimensional systems with weak spin-orbit coupling, but also reveal that they enable more energy efficient manipulation of magnetization in spintronic devices.
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Submitted 19 January, 2024; v1 submitted 27 September, 2023;
originally announced September 2023.
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All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases
Authors:
Fernando Gallego,
Felix Trier,
Srijani Mallik,
Julien Bréhin,
Sara Varotto,
Luis Moreno Vicente-Arche,
Tanay Gosavy,
Chia-Ching Lin,
Jean-René Coudevylle,
Lucía Iglesias,
Félix Casanova,
Ian Young,
Laurent Vila,
Jean-Philippe Attané,
Manuel Bibes
Abstract:
The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large sp…
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The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pumping experiments. Here, we report all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated nanodevices in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. We optimized the spin-charge conversion signal by applying back-gate voltages, and studied its temperature evolution. We further disentangled the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices could potentially lead to new technology paradigms for beyond-CMOS computing architectures.
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Submitted 25 September, 2023;
originally announced September 2023.
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FeCo Nanowire-Strontium Ferrite Powder Composites for Permanent Magnets with High-Energy Products
Authors:
J. C. Guzmán-Mínguez,
S. Ruiz-Gómez,
L. M. Vicente-Arche,
C. Granados-Miralles,
C. Fernández-González,
F. Mompeán,
M. García-Hernández,
S. Erohkin,
D. Berkov,
D. Mishra,
C. de Julián Fernández,
J. F. Fernández,
L. Pérez,
A. Quesada
Abstract:
Due to the issues associated with rare-earth elements, there arises a strong need for magnets with properties between those of ferrites and rare-earth magnets that could substitute the latter in selected applications. Here, we produce a high remanent magnetization composite bonded magnet by mixing FeCo nanowire powders with hexaferrite particles. In the first step, metallic nanowires with diameter…
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Due to the issues associated with rare-earth elements, there arises a strong need for magnets with properties between those of ferrites and rare-earth magnets that could substitute the latter in selected applications. Here, we produce a high remanent magnetization composite bonded magnet by mixing FeCo nanowire powders with hexaferrite particles. In the first step, metallic nanowires with diameters between 30 and 100 nm and length of at least 2 μm are fabricated by electrodeposition. The oriented as-synthesized nanowires show remanence ratios above 0.76 and coercivities above 199 kA/m and resist core oxidation up to 300 °C due to the existence of a > 8 nm thin oxide passivating shell. In the second step, a composite powder is fabricated by mixing the nanowires with hexaferrite particles. After the optimal nanowire diameter and composite composition are selected, a bonded magnet is produced. The resulting magnet presents a 20% increase in remanence and an enhancement of the energy product of 48% with respect to a pure hexaferrite (strontium ferrite) magnet. These results put nanowire-ferrite composites at the forefront as candidate materials for alternative magnets for substitution of rare earths in applications that operate with moderate magnet performance.
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Submitted 24 September, 2023;
originally announced September 2023.
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Patterning of superconducting two-dimensional electron gases based on AlO$_x$/KTaO$_3$(111) interfaces
Authors:
Hugo Witt,
Srijani Mallik,
Luis M. Vicente-Arche,
Gerbold Ménard,
Guilhem Saïz,
Daniela Storniauolo,
Maria D'Antuono,
Isabella Boventer,
Nicolas Bergeal,
Manuel Bibes
Abstract:
The versatility of properties displayed by two-dimensional electron gases (2DEGs) at oxide interfaces has fostered intense research in hope of achieving exotic electromagnetic effects in confined systems. Of particular interest is the recently discovered superconducting state appearing in (111)-oriented KTaO$_3$ interfaces, with a critical temperature $T_c \approx 2$ K, almost ten times higher tha…
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The versatility of properties displayed by two-dimensional electron gases (2DEGs) at oxide interfaces has fostered intense research in hope of achieving exotic electromagnetic effects in confined systems. Of particular interest is the recently discovered superconducting state appearing in (111)-oriented KTaO$_3$ interfaces, with a critical temperature $T_c \approx 2$ K, almost ten times higher than that of SrTiO$_3$-based 2DEGs. Just as in SrTiO$_3$-based 2DEGs, fabricating devices in this new system is a technical challenge due to the fragility of the 2DEG and the propensity of bulk KTaO$_3$ to become conducting outside the devices upon adventitious oxygen vacancy doping. Here, we present three different techniques for patterning Hall bars in AlO$_x$/KTaO$_3$~(111) heterostructures. The devices show superconducting transitions ranging from 1.3 K to 1.78 K, with limited degradation from the unpatterned thin film, and enable an efficient tuning of the carrier density by electric field effect. The array of techniques allows for the definition of channels with a large range of dimensions for the design of various kinds of devices to explore the properties of this system down to the nanoscale.
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Submitted 26 October, 2022;
originally announced October 2022.
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Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO$_3$ interfaces
Authors:
Sara Varotto,
Annika Johansson,
Börge Göbel,
Luis M. Vicente-Arche,
Srijani Mallik,
Julien Bréhin,
Raphaël Salazar,
François Bertran,
Patrick Le Fèvre,
Nicolas Bergeal,
Julien Rault,
Ingrid Mertig,
Manuel Bibes
Abstract:
Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advan…
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Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advanced understanding of their rich spin-orbit physics. Here, we investigate KTaO$_3$-2DEGs and evidence their Rashba-split bands using angle resolved photoemission spectroscopy. Fitting the bands with a tight-binding Hamiltonian, we extract the effective Rashba coefficient and bring insight into the complex multiorbital nature of the band structure. Our calculations reveal unconventional spin and orbital textures, showing compensation effects from quasi-degenerate band pairs which strongly depend on in-plane anisotropy. We compute the band-resolved spin and orbital Edelstein effects, and predict interconversion efficiencies exceeding those of other oxide 2DEGs. Finally, we suggest design rules for Rashba systems to optimize spin-charge interconversion performance.
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Submitted 18 July, 2022;
originally announced July 2022.
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Non-collinear and strongly asymmetric polar moments at back-gated SrTiO3 interfaces
Authors:
Fryderyk Lyzwa,
Yurii G. Pashkevich,
Premysl Marsik,
Andrei Sirenko,
Andrew Chan,
Benjamin P. P. Mallett,
Meghdad Yazdi-Rizi,
Bing Xu,
Luis M. Vicente-Arche,
Diogo C. Vaz,
Gervasi Herranz,
Maximilien Cazayous,
Pierre Hemme,
Katrin Fürsich,
Matteo Minola,
Bernhard Keimer,
Manuel Bibes,
Christian Bernhard
Abstract:
The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as electrical modulation of the spin-orbit Rashba coupling for spin-charge conversion. These findings raise important questions about the origin of the confined e…
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The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as electrical modulation of the spin-orbit Rashba coupling for spin-charge conversion. These findings raise important questions about the origin of the confined electrons as well as the mechanisms that govern the interfacial electric field. Here we use infrared ellipsometry and confocal Raman spectroscopy to show that an anomalous polar moment is induced at the interface that is non-collinear, highly asymmetric and hysteretic with respect to the vertical gate electric field. Our data indicate that an important role is played by the electromigration of oxygen vacancies and their clustering at the antiferrodistortive domain boundaries of SrTiO3, which generates local electric and possibly also flexoelectric fields and subsequent polar moments with a large lateral component. Our results open new perspectives for the defect engineering of lateral devices with strongly enhanced and hysteretic local electric fields that can be manipulated with various other parameters, like strain, temperature, or photons.
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Submitted 14 September, 2021;
originally announced September 2021.
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Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases
Authors:
Luis M. Vicente-Arche,
Julien Bréhin,
Sara Varotto,
Maxen Cosset-Cheneau,
Srijani Mallik,
Raphaël Salazar,
Paul Noël,
Diogo Castro Vaz,
Felix Trier,
Suvam Bhattacharya,
Anke Sander,
Patrick Le Fèvre,
François Bertran,
Guilhem Saiz,
Gerbold Ménard,
Nicolas Bergeal,
Agnès Barthélémy,
Hai Li,
Chia-Ching Lin,
Dmitri E. Nikonov,
Ian A. Young,
Julien Rault,
Laurent Vila,
Jean-Philippe Attané,
Manuel Bibes
Abstract:
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an…
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Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices.
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Submitted 17 August, 2021;
originally announced August 2021.
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Metal/SrTiO$_3$ two-dimensional electron gases for spin-to-charge conversion
Authors:
Luis M. Vicente-Arche,
Srijani Mallik,
Maxen Cosset-Cheneau,
Paul Noël,
Diogo Vaz,
Felix Trier,
Tanay A. Gosavi,
Chia-Ching Lin,
Dmitri E. Nikonov,
Ian A. Young,
Anke Sander,
Agnès Barthélémy,
Jean-Philippe Attané,
Laurent Vila,
Manuel Bibes
Abstract:
SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties o…
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SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pumping ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier.
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Submitted 5 February, 2021;
originally announced February 2021.
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A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$
Authors:
Julien Bréhin,
Felix Trier,
Luis M. Vicente-Arche,
Pierre Hemme,
Paul Noël,
Maxen Cosset-Chéneau,
Jean-Philippe Attané,
Laurent Vila,
Anke Sander,
Yann Gallais,
Alain Sacuto,
Brahim Dkhil,
Vincent Garcia,
Stéphane Fusil,
Agnès Barthélémy,
Maximilien Cazayous,
Manuel Bibes
Abstract:
Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an extern…
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Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.
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Submitted 7 July, 2020;
originally announced July 2020.