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Thermal cycling induced evolution and colossal exchange bias in MnPS3/Fe3GeTe2 van der Waals heterostructures
Authors:
Aravind Puthirath Balan,
Aditya Kumar,
Patrick Reiser,
Joseph Vas,
Thibaud Denneulin,
Khoa Dang Lee,
Tom G Saunderson,
Märta Tschudin,
Clement Pellet-Mary,
Debarghya Dutta,
Carolin Schrader,
Tanja Scholz,
Jaco Geuchies,
Shuai Fu,
Hai Wang,
Alberta Bonanni,
Bettina V. Lotsch,
Ulrich Nowak,
Gerhard Jakob,
Jacob Gayles,
Andras Kovacs,
Rafal E. Dunin-Borkowski,
Patrick Maletinsky,
Mathias Kläui
Abstract:
The exchange bias phenomenon, inherent in exchange-coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structure, provide an optimal platform for probing such physical phenomena. However, achieving a facile and effective means to manipulate exchange bias in pristine van der Waals heterostructures remains challengin…
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The exchange bias phenomenon, inherent in exchange-coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structure, provide an optimal platform for probing such physical phenomena. However, achieving a facile and effective means to manipulate exchange bias in pristine van der Waals heterostructures remains challenging. In this study, we investigate the origin of exchange bias in MnPS3/Fe3GeTe2 van der Waals heterostructures. Our work demonstrates a method to modulate unidirectional exchange anisotropy, achieving an unprecedented nearly 1000% variation through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS3, magneto-transport measurements reveal a huge 170 mT exchange bias at 5 K, the largest observed in pristine van der Waals antiferromagnet-ferromagnet interfaces. This substantial magnitude of the exchange bias is linked to an anomalous weak ferromagnetic ordering in MnPS3 below 40 K. On the other hand, the tunability of exchange bias during thermal cycling is ascribed to the modified arrangement of interfacial atoms and changes in the vdW gap during field cooling. Our findings highlight a robust and easily adjustable exchange bias in van der Waals antiferromagnetic/ferromagnetic heterostructures, presenting a straightforward approach to enhance other interface related spintronic phenomena for practical applications.
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Submitted 8 March, 2024;
originally announced March 2024.
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Direct observation of altermagnetic band splitting in CrSb thin films
Authors:
Sonka Reimers,
Lukas Odenbreit,
Libor Smejkal,
Vladimir N. Strocov,
Procopios Constantinou,
Anna Birk Hellenes,
Rodrigo Jaeschke Ubiergo,
Warlley H. Campos,
Venkata K. Bharadwaj,
Atasi Chakraborty,
Thiboud Denneulin,
Wen Shi,
Rafal E. Dunin-Borkowski,
Suvadip Das,
Mathias Kläui,
Jairo Sinova,
Martin Jourdan
Abstract:
Altermagnetism represents an emergent collinear magnetic phase with compensated order and an unconventional alternating even-parity wave spin order in the non-relativistic band structure. We investigate directly this unconventional band splitting near the Fermi energy through spinintegrated soft X-ray angular resolved photoemission spectroscopy. The experimentally obtained angle-dependent photoemi…
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Altermagnetism represents an emergent collinear magnetic phase with compensated order and an unconventional alternating even-parity wave spin order in the non-relativistic band structure. We investigate directly this unconventional band splitting near the Fermi energy through spinintegrated soft X-ray angular resolved photoemission spectroscopy. The experimentally obtained angle-dependent photoemission intensity, acquired from epitaxial thin films of the predicted altermagnet CrSb, demonstrates robust agreement with the corresponding band structure calculations. In particular, we observe the distinctive splitting of an electronic band on a low-symmetry path in the Brilliouin zone that connects two points featuring symmetry-induced degeneracy. The measured large magnitude of the spin splitting of approximately 0.6 eV and the position of the band just below the Fermi energy underscores the signifcance of altermagnets for spintronics based on robust broken time reversal symmetry responses arising from exchange energy scales, akin to ferromagnets, while remaining insensitive to external magnetic fields and possessing THz dynamics, akin to antiferromagnets.
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Submitted 20 February, 2024; v1 submitted 26 October, 2023;
originally announced October 2023.
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Quantifying the large contribution from orbital Rashba effect to the effective damping-like torque on magnetization
Authors:
S. Krishnia,
B. Bony,
E. Rongione,
L. Moreno Vicente-Arche,
T. Denneulin,
Y. Lu,
R. E. Dunin-Borkowski,
S. Collin,
A. Fert,
J. -M. George,
N. Reyren,
V. Cros,
H. Jaffrès
Abstract:
The generation of large spin currents, and the associated spin torques, which are at the heart of modern spintronics, have long been achieved by charge-to-spin conversion mechanisms, i.e. the spin Hall effect and/or the Rashba effect, intrinsically linked to a strong spin-orbit coupling. Recently, a novel path has been predicted and observed for achieving significant current-induced torques origin…
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The generation of large spin currents, and the associated spin torques, which are at the heart of modern spintronics, have long been achieved by charge-to-spin conversion mechanisms, i.e. the spin Hall effect and/or the Rashba effect, intrinsically linked to a strong spin-orbit coupling. Recently, a novel path has been predicted and observed for achieving significant current-induced torques originating from light elements, hence possessing a weak spin-orbit interaction. These findings point out to the potential involvement of the orbital counterpart of electrons, namely the orbital Hall and orbital Rashba effects. In this study, we aim at quantifying these orbital-related contributions to the effective torques acting on a thin Co layer in different systems. First, in Pt|Co|Cu|AlOx stacking, we demonstrate a comparable torque strength coming from the conversion due to the orbital Rashba effect at the Cu|AlOx interface and the one from the effective spin Hall effect in bottom Pt|Co system. Secondly, in order to amplify the orbital-to-spin conversion, we investigate the impact of an intermediate Pt layer in Co|Pt|Cu|CuOx. From the Pt thickness dependence of the effective torques determined by harmonic Hall measurements complemented by spin Hall magneto-resistance and THz spectroscopy experiments, we demonstrate that a large orbital Rashba effect is present at the Cu|CuOx interface, leading to a twofold enhancement of the net torques on Co for the optimal Pt thickness. Our findings not only demonstrate the crucial role that orbital currents can play in low-dimensional systems with weak spin-orbit coupling, but also reveal that they enable more energy efficient manipulation of magnetization in spintronic devices.
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Submitted 19 January, 2024; v1 submitted 27 September, 2023;
originally announced September 2023.
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Driving skyrmions in flow regime in synthetic ferrimagnets
Authors:
Sougata Mallick,
Yanis Sassi,
Nicholas Figueiredo Prestes,
Sachin Krishnia,
Fernando Gallego,
Thibaud Denneulin,
Sophie Collin,
Karim Bouzehouane,
André Thiaville,
Rafal E. Dunin-Borkowski,
Vincent Jeudy,
Albert Fert,
Nicolas Reyren,
Vincent Cros
Abstract:
Despite significant advances in the last decade regarding the room temperature stabilization of skyrmions or their current induced dynamics, the impact of local material inhomogeneities still remains an important issue that impedes to reach the regime of steady state motion of these spin textures. Here, we study the spin-torque driven motion of skyrmions in synthetic ferrimagnetic multilayers with…
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Despite significant advances in the last decade regarding the room temperature stabilization of skyrmions or their current induced dynamics, the impact of local material inhomogeneities still remains an important issue that impedes to reach the regime of steady state motion of these spin textures. Here, we study the spin-torque driven motion of skyrmions in synthetic ferrimagnetic multilayers with the aim of achieving high mobility and reduced skyrmion Hall effect. We consider Pt|Co|Tb multilayers of various thicknesses with antiferromagnetic coupling between the Co and Tb magnetization. The increase of Tb thickness in the multilayers allows to reduce the total magnetic moment and increases the spin-orbit torques allowing to reach velocities up to 400 m.s-1 for skyrmions with diameters of about 160 nm. We demonstrate that due to reduced skyrmion Hall effect, combined with the edge repulsion of the magnetic track making the skyrmions moving along the track without any transverse deflection. Further, by comparing the field-induced domain wall motion and current-induced skyrmion motion, we demonstrate that the skyrmions at the largest current densities present all the characteristics of a dynamical flow regime.
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Submitted 1 June, 2023; v1 submitted 30 May, 2023;
originally announced May 2023.
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Harnessing van der Waals CrPS4 and Surface Oxides for non-monotonic pre-set field induced Exchange Bias in Fe3GeTe2
Authors:
Aravind Puthirath Balan,
Aditya Kumar,
Tanja Scholz,
Zhongchong Lin,
Aga Shahee,
Shuai Fu,
Thibaud Denneulin,
Joseph Vas,
Andras Kovacs,
Rafal E. Dunin-Borkowski,
Hai I. Wang,
Jinbo Yang,
Bettina Lotsch,
Ulrich Nowak,
Mathias Klaeui
Abstract:
Two-dimensional van der Waals (vdW) heterostructures are an attractive platform for studying exchange bias due to their defect free and atomically flat interfaces. Chromium thiophosphate (CrPS4), an antiferromagnetic material, possesses uncompensated magnetic spins in a single layer, rendering it a promising candidate for exploring exchange bias phenomena. Recent findings have highlighted that nat…
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Two-dimensional van der Waals (vdW) heterostructures are an attractive platform for studying exchange bias due to their defect free and atomically flat interfaces. Chromium thiophosphate (CrPS4), an antiferromagnetic material, possesses uncompensated magnetic spins in a single layer, rendering it a promising candidate for exploring exchange bias phenomena. Recent findings have highlighted that naturally oxidized vdW ferromagnetic Fe3GeTe2 exhibits exchange bias, attributed to the antiferromagnetic coupling of its ultrathin surface oxide layer (O-FGT) with the underlying unoxidized Fe3GeTe2. Anomalous Hall measurements are employed to scrutinize the exchange bias within the CrPS4/(O-FGT)/Fe3GeTe2 heterostructure. This analysis takes into account the contributions from both the perfectly uncompensated interfacial CrPS4 layer and the interfacial oxide layer. Intriguingly, a distinct and non-monotonic exchange bias trend is observed as a function of temperature below 140 K. The occurrence of exchange bias induced by a 'pre-set field' implies that the prevailing phase in the polycrystalline surface oxide is ferrimagnetic Fe3O4. Moreover, the exchange bias induced by the ferrimagnetic Fe3O4 is significantly modulated by the presence of the van der Waals antiferromagnetic CrPS4 layer, forming a heterostructure, along with additional iron oxide phases within the oxide layer. These findings underscore the intricate and complex nature of exchange bias in van der Waals heterostructures, highlighting their potential for tailored manipulation and control.
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Submitted 16 February, 2024; v1 submitted 23 March, 2023;
originally announced March 2023.
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Field-free switching of perpendicular magnetization in an ultrathin epitaxial magnetic insulator
Authors:
Sajid Husain,
Olivier Fayet,
Nicholas F. Prestes,
Sophie Collin,
Florian Godel,
Eric Jacquet,
Thibaud Denneulin,
Rafal E. Dunin-Borkowski,
André Thiaville,
Manuel Bibes,
Nicolas Reyren,
Henri Jaffrès,
Albert Fert,
Jean-Marie George
Abstract:
For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT switching generally requires the assistance of an in-plane magnetic field to break the symmetry. Here, we present experiments demonstrating the field-free SOT sw…
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For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT switching generally requires the assistance of an in-plane magnetic field to break the symmetry. Here, we present experiments demonstrating the field-free SOT switching of perpendicularly magnetized layers of the thulium iron garnet (Tm_{3}Fe_{5}O_{12}) magnetic insulator. The polarity of the switching loops, clockwise (CW) or counter-clockwise (CCW), is determined by the direction of the initial current pulses, in contrast with field-assisted switchings in which this polarity is controlled by the direction of the field. After an independent determination of Dzyaloshinskii-Moriya interaction (DMI), we relate the field free switching to the interplay of SOT and DMI and the polarity of the loops to the imprint of a Néel domain wall induced by the first pulse, in agreement with Kerr imaging. Our observation and interpretation of field-free electrical switching of a magnetic insulator is an important milestone for future low power spintronic devices.
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Submitted 26 January, 2023;
originally announced January 2023.
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Current-driven writing process in antiferromagnetic Mn2Au for memory applications
Authors:
Sonka Reimers,
Yaryna Lytvynenko,
Yuran Niu,
Evangelos Golias,
Brice Sarpi,
Larissa Ishibe-Veiga,
Thibauld Denneulin,
Andras Kovacs,
Rafal Dunin-Borkowski,
Jonathan Bläßer,
Mathias Kläui,
Martin Jourdan
Abstract:
Current pulse driven Neel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Neel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligne…
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Current pulse driven Neel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Neel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of 20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Neel spin-orbit torque acting on the domain walls.
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Submitted 21 December, 2022; v1 submitted 8 August, 2022;
originally announced August 2022.
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Skyrmionic Spin Structures in Layered Fe5GeTe2 Up To Room Temperature
Authors:
Maurice Schmitt,
Thibaud Denneulin,
András Kovács,
Tom G. Saunderson,
Philipp Rüßmann,
Aga Shahee,
Tanja Scholz,
Amir Tavabi,
Martin Gradhand,
Phivos Mavropoulos,
Bettina Lotsch,
Rafal Dunin-Borkowski,
Yuriy Mokrousov,
Stefan Blügel,
Mathias Kläui
Abstract:
The role of the crystal lattice, temperature and magnetic field for the spin structure formation in the 2D van der Waals magnet Fe5GeTe2 is a key open question. Using Lorentz transmission electron microscopy, we experimentally observe topological spin structures up to room temperature in the metastable pre-cooling and stable post-cooling phase of Fe5GeTe2. Over wide temperature and field ranges, s…
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The role of the crystal lattice, temperature and magnetic field for the spin structure formation in the 2D van der Waals magnet Fe5GeTe2 is a key open question. Using Lorentz transmission electron microscopy, we experimentally observe topological spin structures up to room temperature in the metastable pre-cooling and stable post-cooling phase of Fe5GeTe2. Over wide temperature and field ranges, skyrmionic magnetic bubbles form without preferred chirality, which is indicative of a centrosymmetric crystal structure. In the pre-cooling phase, these bubbles are observable even without the application of an external field, while in the post-cooling phase, a transformation from bubble domains to stripe domains is seen. To understand the magnetic order in Fe5GeTe2 we compare macroscopic magnetometry characterization results with microscopic density functional theory calculation. Our results show that even up to room temperature, topological spin structures can be stabilized in centrosymmetric van der Waals magnets.
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Submitted 2 May, 2022; v1 submitted 24 April, 2022;
originally announced April 2022.
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Strong bulk spin-orbit torques quantified in the van der Waals ferromagnet Fe3GeTe2
Authors:
Franziska Martin,
Kyujoon Lee,
Maurice Schmitt,
Anna Liedtke,
Aga Shahee,
Haakon Thømt Simensen,
Tanja Scholz,
Tom G. Saunderson,
Dongwook Go,
Martin Gradhand,
Yuriy Mokrousov,
Thibaud Denneulin,
András Kovács,
Bettina Lotsch,
Arne Brataas,
Mathias Kläui
Abstract:
The recent emergence of magnetic van der Waals materials allows for the investigation of current induced magnetization manipulation in two dimensional materials. Uniquely, Fe3GeTe2 has a crystalline structure that allows for the presence of bulk spin-orbit torques (SOTs), that we quantify in a Fe3GeTe2 flake. From the symmetry of the measured torques, we identify the current induced effective fiel…
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The recent emergence of magnetic van der Waals materials allows for the investigation of current induced magnetization manipulation in two dimensional materials. Uniquely, Fe3GeTe2 has a crystalline structure that allows for the presence of bulk spin-orbit torques (SOTs), that we quantify in a Fe3GeTe2 flake. From the symmetry of the measured torques, we identify the current induced effective fields using harmonic analysis and find dominant bulk SOTs, which arise from the symmetry in the crystal structure. Our results show that Fe3GeTe2 uniquely can exhibit bulk SOTs in addition to the conventional interfacial SOTs enabling magnetization manipulation even in thick single layers without the need for complex multilayer engineering.
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Submitted 20 July, 2021;
originally announced July 2021.
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Discovery and implications of hidden atomic-scale structure in a metallic meteorite
Authors:
András Kovács,
Laura H. Lewis,
Dhanalaksmi Palanisamy,
Thibaud Denneulin,
Alexander Schwedt,
Edward R. D. Scott,
Baptiste Gault,
Dierk Raabe,
Rafal E. Dunin-Borkowski,
Michalis Charilaou
Abstract:
Iron and its alloys have made modern civilisation possible, with metallic meteorites providing one of the human's earliest sources of usable iron as well as providing a window into our solar system's billion-year history. Here highest-resolution tools reveal the existence of a previously hidden FeNi nanophase within the extremely slowly cooled metallic meteorite NWA 6259. This new nanophase exists…
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Iron and its alloys have made modern civilisation possible, with metallic meteorites providing one of the human's earliest sources of usable iron as well as providing a window into our solar system's billion-year history. Here highest-resolution tools reveal the existence of a previously hidden FeNi nanophase within the extremely slowly cooled metallic meteorite NWA 6259. This new nanophase exists alongside Ni-poor and Ni-rich nanoprecipitates within a matrix of tetrataenite, the uniaxial, chemically ordered form of FeNi. The ferromagnetic nature of the nanoprecipitates combined with the antiferromagnetic character of the FeNi nanophases give rise to a complex magnetic state that evolves dramatically with temperature. These observations extend and possibly alter our understanding of celestial metallurgy, provide new knowledge concerning the archetypal Fe-Ni phase diagram and supply new information for the development of new types of sustainable, technologically critical high-energy magnets.
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Submitted 16 July, 2021;
originally announced July 2021.
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Readout of a antiferromagnetic spintronics systems by strong exchange coupling of Mn2Au and Permalloy
Authors:
S. P. Bommanaboyena,
D. Backes,
L. S. I. Veiga,
S. S. Dhesi,
Y. R. Niu,
B. Sarpi,
T. Denneulin,
A. Kovacs,
T. Mashoff,
O. Gomonay,
J. Sinova,
K. Everschor-Sitte,
D. Schönke,
R. M. Reeve,
M. Kläui,
H. -J. Elmers,
M. Jourdan
Abstract:
In antiferromagnetic spintronics, the read-out of the staggered magnetization or Neel vector is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for novel devices. Here, we demonstrate strong exchange coupling of Mn2Au, a unique metallic antiferromagnet that exhibits Neel spin-orbit torques, with thin ferromagnetic Permalloy layers. This allows us to benefit…
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In antiferromagnetic spintronics, the read-out of the staggered magnetization or Neel vector is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for novel devices. Here, we demonstrate strong exchange coupling of Mn2Au, a unique metallic antiferromagnet that exhibits Neel spin-orbit torques, with thin ferromagnetic Permalloy layers. This allows us to benefit from the well-estabished read-out methods of ferromagnets, while the essential advantages of antiferromagnetic spintronics are retained. We show one-to-one imprinting of the antiferromagnetic on the ferromagnetic domain pattern. Conversely, alignment of the Permalloy magnetization reorients the Mn2Au Neel vector, an effect, which can be restricted to large magnetic fields by tuning the ferromagnetic layer thickness. To understand the origin of the strong coupling, we carry out high resolution electron microscopy imaging and we find that our growth yields an interface with a well-defined morphology that leads to the strong exchange coupling.
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Submitted 4 June, 2021;
originally announced June 2021.
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Room temperature skyrmions at zero field in exchange-biased ultrathin films
Authors:
K. Gaurav Rana,
A. Finco,
F. Fabre,
S. Chouaieb,
A. Haykal,
L. D. Buda-Prejbeanu,
O. Fruchart,
S. Le Denmat,
P. David,
M. Belmeguenai,
T. Denneulin,
R. E. Dunin-Borkowski,
G. Gaudin,
V. Jacques,
O. Boulle
Abstract:
We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging…
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We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging is performed both with magnetic force microscopy and scanning Nitrogen-Vacancy magnetometry, the latter providing unambiguous measurements at zero external magnetic field. In such samples, we show that exchange bias provides an immunity of the skyrmion spin texture to moderate external magnetic field, in the tens of mT range, which is an important feature for applications as memory devices. These results establish exchange-biased multilayer stacks as a promising platform towards the effective realization of memory and logic devices based on magnetic skyrmions.
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Submitted 28 January, 2020; v1 submitted 3 January, 2020;
originally announced January 2020.
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BaTiO3 thin films as transitional ferrroelectrics with giant dielectric response
Authors:
A. S. Everhardt,
T. Denneulin,
A. Gruenebohm,
Y-T. Shao,
P. Ondrejkovic,
S. Zhou,
N. Domingo,
G. Catalan,
J. Hlinka,
J-M. Zuo,
S. Matzen,
B. Noheda
Abstract:
Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelect…
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Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelectric-ferroelectric critical temperature. The flat energy landscapes close to these PTs give rise to polarization rotation under external stimuli, being responsible for the best piezoelectrics so far and a their huge market. But this approach requires complex chemistry to achieve temperature-independent PT boundaries and often involves lead-containing compounds. Here we report that such a bridging state is possible in thin films of chemically simple materials such as BaTiO3. A coexistence of tetragonal, orthorhombic and their bridging low-symmetry phases are shown to be responsible for the continuous vertical polarization rotation, recreating a smear in-transition state and leading to giant temperature-independent dielectric response. These features are distinct from those of single crystals, multi-domain crystals, ceramics or relaxor ferroelectrics, requiring a different description. We believe that other materials can be engineered in a similar way to form a class of ferroelectrics, in which MPB solid solutions are also included, that we propose to coin as transitional ferroelectrics.
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Submitted 23 July, 2019;
originally announced July 2019.
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Excitons in InGaAs Quantum Dots without Electron Wetting Layer States
Authors:
Matthias C. Löbl,
Sven Scholz,
Immo Söllner,
Julian Ritzmann,
Thibaud Denneulin,
Andras Kovacs,
Beata E. Kardynał,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and nano-engineered devices. InAs QDs are excellent photon emitters: QD-excitons, electron-hole bound pairs, are exploited as emitters of high quality single photons for quantu…
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The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and nano-engineered devices. InAs QDs are excellent photon emitters: QD-excitons, electron-hole bound pairs, are exploited as emitters of high quality single photons for quantum communication. One significant drawback of the SK-mode is the wetting layer (WL). The WL results in a continuum rather close in energy to the QD-confined-states. The WL-states lead to unwanted scattering and dephasing processes of QD-excitons. Here, we report that a slight modification to the SK-growth-protocol of InAs on GaAs -- we add a monolayer of AlAs following InAs QD formation -- results in a radical change to the QD-excitons. Extensive characterisation demonstrates that this additional layer eliminates the WL-continuum for electrons enabling the creation of highly charged excitons where up to six electrons occupy the same QD. Single QDs grown with this protocol exhibit optical linewidths matching those of the very best SK QDs making them an attractive alternative to standard InGaAs QDs.
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Submitted 1 October, 2018;
originally announced October 2018.