Driving skyrmions in flow regime in synthetic ferrimagnets
Authors:
Sougata Mallick,
Yanis Sassi,
Nicholas Figueiredo Prestes,
Sachin Krishnia,
Fernando Gallego,
Thibaud Denneulin,
Sophie Collin,
Karim Bouzehouane,
André Thiaville,
Rafal E. Dunin-Borkowski,
Vincent Jeudy,
Albert Fert,
Nicolas Reyren,
Vincent Cros
Abstract:
Despite significant advances in the last decade regarding the room temperature stabilization of skyrmions or their current induced dynamics, the impact of local material inhomogeneities still remains an important issue that impedes to reach the regime of steady state motion of these spin textures. Here, we study the spin-torque driven motion of skyrmions in synthetic ferrimagnetic multilayers with…
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Despite significant advances in the last decade regarding the room temperature stabilization of skyrmions or their current induced dynamics, the impact of local material inhomogeneities still remains an important issue that impedes to reach the regime of steady state motion of these spin textures. Here, we study the spin-torque driven motion of skyrmions in synthetic ferrimagnetic multilayers with the aim of achieving high mobility and reduced skyrmion Hall effect. We consider Pt|Co|Tb multilayers of various thicknesses with antiferromagnetic coupling between the Co and Tb magnetization. The increase of Tb thickness in the multilayers allows to reduce the total magnetic moment and increases the spin-orbit torques allowing to reach velocities up to 400 m.s-1 for skyrmions with diameters of about 160 nm. We demonstrate that due to reduced skyrmion Hall effect, combined with the edge repulsion of the magnetic track making the skyrmions moving along the track without any transverse deflection. Further, by comparing the field-induced domain wall motion and current-induced skyrmion motion, we demonstrate that the skyrmions at the largest current densities present all the characteristics of a dynamical flow regime.
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Submitted 1 June, 2023; v1 submitted 30 May, 2023;
originally announced May 2023.
Field-free switching of perpendicular magnetization in an ultrathin epitaxial magnetic insulator
Authors:
Sajid Husain,
Olivier Fayet,
Nicholas F. Prestes,
Sophie Collin,
Florian Godel,
Eric Jacquet,
Thibaud Denneulin,
Rafal E. Dunin-Borkowski,
André Thiaville,
Manuel Bibes,
Nicolas Reyren,
Henri Jaffrès,
Albert Fert,
Jean-Marie George
Abstract:
For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT switching generally requires the assistance of an in-plane magnetic field to break the symmetry. Here, we present experiments demonstrating the field-free SOT sw…
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For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT switching generally requires the assistance of an in-plane magnetic field to break the symmetry. Here, we present experiments demonstrating the field-free SOT switching of perpendicularly magnetized layers of the thulium iron garnet (Tm_{3}Fe_{5}O_{12}) magnetic insulator. The polarity of the switching loops, clockwise (CW) or counter-clockwise (CCW), is determined by the direction of the initial current pulses, in contrast with field-assisted switchings in which this polarity is controlled by the direction of the field. After an independent determination of Dzyaloshinskii-Moriya interaction (DMI), we relate the field free switching to the interplay of SOT and DMI and the polarity of the loops to the imprint of a Néel domain wall induced by the first pulse, in agreement with Kerr imaging. Our observation and interpretation of field-free electrical switching of a magnetic insulator is an important milestone for future low power spintronic devices.
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Submitted 26 January, 2023;
originally announced January 2023.
