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Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride
Authors:
C. Vergnaud,
V. Tiwari,
L. Ren,
T. Taniguchi,
K. Watanabe,
H. Okuno,
I. Gomes de Moraes,
A. Marty,
C. Robert,
X. Marie,
M. Jamet
Abstract:
Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy…
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Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy in the van der Waals regime. It constitutes the first step towards the development of large area single crystalline TMDs encapsulated in hBN for potential integration in electronic or opto-electronic devices. For this purpose, we define a two-step growth strategy to achieve monolayer-thick MoSe$_2$ grains on hBN flakes. The high quality of MoSe$_2$ allows us to detect very narrow PL linewidth down to 5.5 meV at 13 K, comparable to the one of encapsulated exfoliated MoSe$_2$ flakes. Moreover, sizeable PL can be detected at room temperature as well as clear reflectivity signatures of A, B and charged excitons.
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Submitted 17 July, 2024;
originally announced July 2024.
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Two-dimensional to bulk crossover of the WSe$_2$ electronic band structure
Authors:
Patrick Le Fèvre,
Raphaël Salazar,
Matthieu Jamet,
François Bertran,
Chiara Bigi,
Abdelkarim Ourghi,
Céline Vergnaud,
Aki Pulkkinen,
Jan Minar,
Thomas Jaouen,
Julien Rault
Abstract:
Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spect…
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Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of epitaxial WSe$_2$ thin films. Increasing number of discrete electronic states appears in given kz-ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green's function calculation. This two-dimensional system is hence used as a benchmark to compare different theoretical approaches.
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Submitted 4 July, 2024;
originally announced July 2024.
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Development and optimization of large-scale integration of 2D material in memristors
Authors:
Clotilde Ligaud,
Lucie Le Van-Jodin,
Bruno Reig,
Pierre Trousset,
Paul Brunet,
Michaël Bertucchi,
Clémence Hellion,
Nicolas Gauthier,
Le Van-Hoan,
Hanako Okuno,
Djordje Dosenovic,
Stéphane Cadot,
Remy Gassilloud,
Matthieu Jamet
Abstract:
Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protoc…
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Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protocols are developed for the fabrication of MoS$_2$-based memristors, and the resulting performances are compared. The quality of MoS$_2$ at each stage of the process is characterized by Raman spectroscopy and x-ray photoemission spectroscopy. In the first protocol, the structure of MoS$_2$ is preserved during transfer and patterning processes. However, a polymer layer with a minimum thickness of 3 nm remains at the surface of MoS$_2$ limiting the electrical switching performances. In the second protocol, the contamination layer is completely removed resulting in improved electrical switching performances and reproducibility. Based on physico-chemical and electrical results, the switching mechanism is discussed in terms of conduction through grain boundaries.
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Submitted 9 May, 2024;
originally announced May 2024.
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Magnetic evolution of Cr$_2$Te$_3$ epitaxially grown on graphene with post-growth annealing
Authors:
Quentin Guillet,
Hervé Boukari,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent T. Renard,
Jean-François Jacquot,
Denis Jalabert,
Céline Vergnaud,
Frédéric Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because the…
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Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because their magnetic properties depend on the amount of self-intercalated Cr atoms between pure CrTe$_2$ layers and the Curie temperature (T$_C$) can reach room temperature for certain compositions. Here, we investigate the evolution of the composition, structural and magnetic properties of thin Cr$_{1.33}$Te$_2$ (Cr$_2$Te$_3$) films epitaxially grown on graphene upon annealing. We observe a transition above 450°C from the Cr$_{1.33}$Te$_2$ phase with perpendicular magnetic anisotropy and a T$_C$ of 180 K to a composition close to Cr$_{1.39}$Te$_2$ with in-plane magnetic anisotropy and a T$_C$ of 240-250 K. This phase remains stable up to 650°C above which a pure Cr film starts to form. This work demonstrates the complex interplay between intercalated Cr, lattice parameters and magnetic properties in Cr$_{1+x}$Te$_2$ compounds.
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Submitted 9 May, 2024;
originally announced May 2024.
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Angular dependence of the interlayer coupling at the interface between two dimensional materials 1T-PtSe$_2$ and graphene
Authors:
P. Mallet,
F. Ibrahim,
K. Abdukayumov,
A. Marty,
C. Vergnaud,
F. Bonell,
M. Chshiev,
M. Jamet,
J-Y. Veuillen
Abstract:
We present a study by Scanning Tunneling Microscopy, supported by ab initio calculations, of the interaction between graphene and monolayer (semiconducting) PtSe$_2$ as a function of the twist angle $θ$ between the two layers. We analyze the PtSe$_2$ contribution to the hybrid interface states that develop within the bandgap of the semiconductor to probe the interaction. The experimental data indi…
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We present a study by Scanning Tunneling Microscopy, supported by ab initio calculations, of the interaction between graphene and monolayer (semiconducting) PtSe$_2$ as a function of the twist angle $θ$ between the two layers. We analyze the PtSe$_2$ contribution to the hybrid interface states that develop within the bandgap of the semiconductor to probe the interaction. The experimental data indicate that the interlayer coupling increases markedly with the value of $θ$, which is confirmed by ab initio calculations. The moiré patterns observed within the gap are consistent with a momentum conservation rule between hybridized states, and the strength of the hybridization can be qualitatively described by a perturbative model.
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Submitted 21 December, 2023; v1 submitted 14 November, 2023;
originally announced November 2023.
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Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe$_2$ using 4D-STEM
Authors:
D. Dosenovic,
K. Sharma,
S. Dechamps,
J. -L. Rouviere,
Y. Lu,
A. Mordant,
M. den Hertog,
L. Genovese,
S. M. -M. Dubois,
J. -C. Charlier,
M. Jamet,
A. Marty,
H. Okuno
Abstract:
There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types o…
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There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types of defects. A thorough atomic-level analysis is essential to fully understand these mechanisms. In this work, vanadium doped WSe$_2$ monolayer grown by molecular beam epitaxy is investigated using four-dimensional scanning transmission electron microscopy (4D-STEM). Through center of mass-based reconstruction, atomic scale maps are produced, allowing the visualization of both the electric field and the electrostatic potential around individual V atoms. To provide quantitative insights, these results are successfully compared with multislice image simulations based on ab initio calculations, accounting for lens aberrations. Finally, a negative charge around the V dopants is detected as a drop in the electrostatic potential, unambiguously demonstrating that 4D-STEM can be used to detect and to accurately analyze single dopant charge states in semiconducting 2D materials.
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Submitted 13 October, 2023;
originally announced October 2023.
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Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers
Authors:
Djordje Dosenovic,
Samuel Dechamps,
Celine Vergnaud,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Luigi Genovese,
Jean-Luc Rouviere,
Martien den Hertog,
Lucie Le Van-Jodin,
Matthieu Jamet,
Alain Marty,
Hanako Okuno
Abstract:
Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be descri…
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Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be described as a patchwork of coalesced domains. Here, we report multi-scale and multistructural analysis on highly oriented epitaxial WS$_2$ and WSe$_2$ monolayers using scanning transmission electron microscopy (STEM) techniques. Characteristic domain junctions are first identified and classified based on the detailed atomic structure analysis using aberration corrected STEM imaging. Mapping orientation, polar direction and phase at the micrometer scale using four-dimensional STEM enabled to access the density and the distribution of the specific domain junctions. Our results validate a readily applicable process for the study of highly oriented epitaxial transition metal dichalcogenides, providing an overview of synthesized materials from large scale down to atomic scale with multiple structural information.
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Submitted 8 June, 2023;
originally announced June 2023.
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Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
Authors:
K. Abdukayumov,
M. Mičica,
F. Ibrahim,
C. Vergnaud,
A. Marty,
J. -Y. Veuillen,
P. Mallet,
I. Gomes de Moraes,
D. Dosenovic,
A. Wright,
J. Tignon,
J. Mangeney,
A. Ouerghi,
V. Renard,
F. Mesple,
F. Bonell,
H. Okuno,
M. Chshiev,
J. -M. George,
H. Jaffrès,
S. Dhillon,
M. Jamet
Abstract:
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t…
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Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission.
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Submitted 11 May, 2023;
originally announced May 2023.
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Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials
Authors:
Quentin Guillet,
Libor Vojacek,
Djordje Dosenovic,
Fatima Ibrahim,
Herve Boukari,
Jing Li,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent Renard,
Jean-Francois Jacquot,
Denis Jalabert,
Hanako Okuno,
Mairbek Chshiev,
Celine Vergnaud,
Frederic Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA a…
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Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface.
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Submitted 6 March, 2023;
originally announced March 2023.
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Spin-orbit torque switching in 2D ferromagnet / topological insulator heterostructure grown by molecular beam epitaxy
Authors:
Thomas Guillet,
Regina V. Galcera,
Juan F. Sierra,
Marius V. Costache,
Matthieu Jamet,
Frédéric Bonell,
Sergio O. Valenzuela
Abstract:
Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs present large device-to-device variations, resulting in a broad distribution of SOT magnitudes. It has been identified that the interfacial quality between the T…
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Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs present large device-to-device variations, resulting in a broad distribution of SOT magnitudes. It has been identified that the interfacial quality between the TI and the FM is of utmost importance in determining the nature and efficiency of the SOT. To optimize the SOT magnitude and enable ultra-low-power magnetization switching, an atomically smooth interface is necessary. To this end, we have developed the growth of a full van der Waals FM/TI heterostructure by molecular beam epitaxy. The compensated TI (Bi0.4Sb0.6)2Te3 and ferromagnetic Fe3GeTe2 (FGT) were chosen because of their exceptional crystalline quality, low carrier concentration in BST and relatively large Curie temperature and perpendicular magnetic anisotropy in FGT. We characterized the magnitude of the SOTs by using thorough harmonic magnetotransport measurements and showed that the magnetization of an ultrathin FGT film could be switched with a current density Jc < 10^10 A/m^2. In comparison to previous studies utilizing traditional FMs, our findings are highly reliable, displaying little to no variation between devices.
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Submitted 2 February, 2023;
originally announced February 2023.
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Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures
Authors:
Raphaël Salazar,
Sara Varotto,
Céline Vergnaud,
Vincent Garcia,
Stéphane Fusil,
Julien Chaste,
Thomas Maroutian,
Alain Marty,
Frédéric Bonell,
Debora Pierucci,
Abdelkarim Ouerghi,
François Bertran,
Patrick Le Fèvre,
Matthieu Jamet,
Manuel Bibes,
Julien Rault
Abstract:
Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonst…
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Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects.
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Submitted 26 October, 2022;
originally announced October 2022.
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Alloying 2D VSe2 with Pt: from a charge density wave state to a disordered insulator
Authors:
E. Velez-Fort,
P. Mallet,
H. Boukari,
A. Marty,
C. Vergnaud,
F. Bonell,
M. Jamet,
J-Y. Veuillen
Abstract:
We have analyzed by means of scanning tunneling microscopy and spectroscopy the atomic and electronic structure of monolayers of 1T-VxPt1-xSe2 alloys grown by molecular beam epitaxy on epitaxial graphene substrates. We have focused on the composition range (0.1<x<0.35) where ferromagnetic behaviour has recently been demonstrated. For low Pt concentration, (x=0.07 and x=0.21), small domains (a few…
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We have analyzed by means of scanning tunneling microscopy and spectroscopy the atomic and electronic structure of monolayers of 1T-VxPt1-xSe2 alloys grown by molecular beam epitaxy on epitaxial graphene substrates. We have focused on the composition range (0.1<x<0.35) where ferromagnetic behaviour has recently been demonstrated. For low Pt concentration, (x=0.07 and x=0.21), small domains (a few nanometres in diameter) exhibiting the characteristic superstructure of the charge density wave (CDW) state of pristine VSe2 monolayer remain visible on most of the sample surface. Thus alloying preserves the short range order of the CDW phase, although it destroys its long range order. For higher Pt concentration (x=0.35) a disordered alloy forms. It presents a fully developped gap (a few tens meV in width) at the Fermi level and is thus a disordered insulator. This gap exhibits strong variations at the nanometer scale, reflecting the local fluctuations in the composition. An unexpectedly large interaction of the TMD layer with the graphene substrate sets in for this composition range.
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Submitted 11 July, 2022;
originally announced July 2022.
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Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy
Authors:
Debora Pierucci,
Aymen Mahmoudi,
Mathieu Silly,
Federico Bisti,
Fabrice Oehler,
Gilles Patriarche Frédéric Bonell,
Alain Marty,
Céline Vergnaud,
Matthieu Jamet,
Hervé Boukari,
Emmanuel Lhuillier,
Marco Pala,
Abdelkarim Ouerghi
Abstract:
Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative…
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Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane x-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe2 band dispersion and a high p-doping coming from the charge transfer between the WSe2 monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe2. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe2. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshifts of about 0.56 eV toward the Fermi level with respect to the VBM of WSe2 on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.
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Submitted 24 January, 2022;
originally announced January 2022.
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Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy
Authors:
Lama Khalil,
Debora Pierucci,
Emilio Velez,
José Avila,
Céline Vergnaud,
Pavel Dudin,
Fabrice Oehler,
Julien Chaste,
Matthieu Jamet,
Emmanuel Lhuillier,
Marco Pala,
Abdelkarim Ouerghi
Abstract:
Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localize…
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Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localized near the K point of the Brillouin zone and has a width of several hundred meVs. By combining ARPES measurements with density functional theory (DFT) calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band at K is determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Gamma point. The energy difference between the VBM at Gamma and the K point is of -60 meV, which is a stark difference compared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K.
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Submitted 10 January, 2022;
originally announced January 2022.
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Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation
Authors:
Alexandros El Sachat,
Peng Xiao,
Davide Donadio,
Frédéric Bonell,
Marianna Sledzinska,
Alain Marty,
Céline Vergnaud,
Hervé Boukari,
Matthieu Jamet,
Guillermo Arregui,
Zekun Chen,
Francesc Alzina,
Clivia M. Sotomayor Torres,
Emigdio Chavez-Angel
Abstract:
We present a comparative investigation of the influence of crystallinity and film thickness on the acoustic and thermal properties of 2D layered PtSe2 thin films of varying thickness (0.6-24 nm) by combining a set of experimental techniques, namely, frequency domain thermo-reflectance, low-frequency Raman and pump-probe coherent phonon spectroscopy. We find a 35% reduction in the cross-plane therm…
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We present a comparative investigation of the influence of crystallinity and film thickness on the acoustic and thermal properties of 2D layered PtSe2 thin films of varying thickness (0.6-24 nm) by combining a set of experimental techniques, namely, frequency domain thermo-reflectance, low-frequency Raman and pump-probe coherent phonon spectroscopy. We find a 35% reduction in the cross-plane thermal conductivity of polycrystalline films with thickness larger than 12 nm compared to the crystalline films of the same thickness due to phonon grain boundary scattering. Density functional theory calculations are in good agreement with the experiments and further reveal the ballistic nature of cross-plane heat transport in PtSe2 up to a certain thickness (~20 nm). In addition, our experiments revealed strong interlayer interactions in PtSe2, short acoustic phonon lifetimes in the range of picoseconds, out-of-plane elastic constant C33=31.8 GPa and layer-dependent group velocity ranging from 1340 m/s in bilayer PtSe2 to 1873 m/s in 8 layers of PtSe2. The potential of tuning the lattice cross-plane thermal conductivity of layered 2D materials with the level of crystallinity and the real-time observation of coherent phonon dynamics, which have direct implications on the cooling and transport of electrons, open a new playground for research in 2D thermoelectric devices and provide guidelines for thermal management in 2D electronics.
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Submitted 29 November, 2021; v1 submitted 26 November, 2021;
originally announced November 2021.
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High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)
Authors:
Frédéric Bonell,
Alain Marty,
Céline Vergnaud,
Vincent Consonni,
Hanako Okuno,
Abdelkarim Ouerghi,
Hervé Boukari,
Matthieu Jamet
Abstract:
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers…
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PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and X-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2V 1s-1 at room temperature and up to 447 cm2V-1s-1 at low temperature.
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Submitted 16 September, 2021;
originally announced September 2021.
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Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2
Authors:
Mário Ribeiro,
Giulio Gentile,
Alain Marty,
Djordje Dosenovic,
Hanako Okuno,
Céline Vergnaud,
Jean-François Jacquot,
Denis Jalabert,
Danilo Longo,
Philippe Ohresser,
Ali Hallal,
Mairbek Chshiev,
Olivier Boulle,
Frédéric Bonell,
Matthieu Jamet
Abstract:
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or abo…
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In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room-temperature and the ability to grow films over large areas. Here we demonstrate the large-area growth of single-crystal ultrathin films of stoichiometric Fe5GeTe2 on an insulating substrate using molecular beam epitaxy. Magnetic measurements show the persistence of soft ferromagnetism up to room temperature, with a Curie temperature of 293 K, and a weak out-of-plane magnetocrystalline anisotropy. Surface, chemical, and structural characterizations confirm the layer-by-layer growth, 5:1:2 Fe:Ge:Te stoichiometric elementary composition, and single crystalline character of the films.
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Submitted 24 June, 2021;
originally announced June 2021.
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Coexistence of ferromagnetism and spin-orbit coupling by incorporation of platinum in two-dimensional VSe$_2$
Authors:
E. Vélez-Fort,
A. Hallal,
R. Sant,
T. Guillet,
K. Abdukayumov,
A. Marty,
C. Vergnaud,
J. -F. Jacquot,
D. Jalabert,
J. Fujii,
I. Vobornik,
J. Rault,
N. B. Brookes,
D. Longo,
P. Ohresser,
A. Ouerghi,
J. -Y. Veuillen,
P. Mallet,
H. Boukari,
H. Okuno,
M. Chshiev,
F. Bonell,
M. Jamet
Abstract:
We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homo…
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We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homogeneous 2D alloy restores ferromagnetic order with Curie temperatures of 6 K for 5 monolayers and 25 K for one monolayer of V$_{0.65}$Pt$_{0.35}$Se$_2$. Moreover, the presence of platinum atoms gives rise to Rashba spin-orbit coupling in (V,Pt)Se$_2$ providing an original platform to study the interplay between ferromagnetism and spin-orbit coupling in the 2D limit.
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Submitted 20 May, 2021;
originally announced May 2021.
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Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states
Authors:
T. Guillet,
C. Zucchetti,
A. Marty,
G. Isella,
C. Vergnaud,
Q. Barbedienne,
H. Jaffrès,
N. Reyren,
J. -M. George,
A. Fert,
M. Jamet
Abstract:
The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in m…
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The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in materials such as Si and Ge that, in their bulk form, possess inversion symmetry (or lack structural inersion asymmetry). The existence of Rashba states could be demonstrated by photoemission spectroscopy at the interface between different metals and Ge(111) and by spin-charge conversion experiments at the Fe/Ge(111) interface even though made of two light elements. In this work, we identify the fingerprint of the Rashba states at the Fe/Ge(111) interface by magnetotransport measurements in the form of a large unidirectional magnetoresistance of up to 0.1 \%. From its temperature dependence, we find that the Rashba energy splitting is larger than in pure Ge(111) subsurface states.
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Submitted 31 October, 2020;
originally announced November 2020.
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Synthesis of epitaxial monolayer Janus SPtSe
Authors:
R. Sant,
M. Gay,
A. Marty,
S. Lisi,
R. Harrabi,
C. Vergnaud,
M. T. Dau,
X. Weng,
J. Coraux,
N. Gauthier,
O. Renault,
G. Renaud,
M. Jamet
Abstract:
Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push chemical composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such a novel Janus compound, SPtSe, which is predicted to exhibit strong Rashba spin-orbit coupling. We synthetized it by conversion of a single-layer of PtSe…
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Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push chemical composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such a novel Janus compound, SPtSe, which is predicted to exhibit strong Rashba spin-orbit coupling. We synthetized it by conversion of a single-layer of PtSe$_2$ on Pt(111) via sulphurization under H$_2$S atmosphere. Our in situ and operando structural analysis with grazing incidence synchrotron X-ray diffraction reveals the process by which the Janus alloy forms. The crystalline long-range order of the as-grown PtSe$_2$ monolayer is first lost due to thermal annealing. A subsequent recrystallization in presence of a source of sulphur yields a highly ordered SPtSe alloy, which is iso-structural to the pristine PtSe$_2$. The chemical composition is resolved, layer-by-layer, using angle-resolved X-ray photoelectron spectroscopy, demonstrating that Se-by-S substitution occurs selectively in the topmost chalcogen layer.
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Submitted 18 September, 2020;
originally announced September 2020.
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Electrical detection of magnetic circular dichroism: application to magnetic microscopy in ultra-thin ferromagnetic films
Authors:
T. Guillet,
A. Marty,
C. Vergnaud,
F. Bonell,
M. Jamet
Abstract:
Imaging the magnetic configuration of thin-films has been a long-standing area of research. Since a few years, the emergence of two-dimensional ferromagnetic materials calls for innovation in the field of magnetic imaging. As the magnetic moments are extremely small, standard techniques like SQUID, torque magnetometry, magnetic force microscopy and Kerr effect microscopy are challenging and often…
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Imaging the magnetic configuration of thin-films has been a long-standing area of research. Since a few years, the emergence of two-dimensional ferromagnetic materials calls for innovation in the field of magnetic imaging. As the magnetic moments are extremely small, standard techniques like SQUID, torque magnetometry, magnetic force microscopy and Kerr effect microscopy are challenging and often lead to the detection of parasitic magnetic contributions or spurious effects. In this work, we report a new magnetic microscopy technique based on the combination of magnetic circular dichroism and Seebeck effect in semiconductor/ferromagnet bilayers. We implement this method with perpendicularly magnetized (Co/Pt) multilayers sputtered on Ge (111). We further show that the electrical detection of MCD is more sensitive than the Kerr magnetometry, especially in the ultra-thin film regime, which makes it particularly promising for the study of emergent two-dimensional ferromagnetic materials.
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Submitted 8 September, 2020;
originally announced September 2020.
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Decoupling Molybdenum Disulfide from its Substrate by Cesium Intercalation
Authors:
Roberto Sant,
Simone Lisi,
Van Dung Nguyen,
Estelle Mazaleyrat,
Ana Cristina Gómez Herrero,
Olivier Geaymond,
Valérie Guisset,
Philippe David,
Alain Marty,
Matthieu Jamet,
Claude Chapelier,
Laurence Magaud,
Yannick J. Dappe,
Marco Bianchi,
Philip Hofmann,
Gilles Renaud,
Johann Coraux
Abstract:
Intercalation of alkali atoms within the lamellar transition metal dichalcogenides is a possible route toward a new generation of batteries. It is also a way to induce structural phase transitions authorizing the realization of optical and electrical switches in this class of materials. The process of intercalation has been mostly studied in three-dimensional dichalcogenide films. Here, we address…
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Intercalation of alkali atoms within the lamellar transition metal dichalcogenides is a possible route toward a new generation of batteries. It is also a way to induce structural phase transitions authorizing the realization of optical and electrical switches in this class of materials. The process of intercalation has been mostly studied in three-dimensional dichalcogenide films. Here, we address the case of a single-layer of molybdenum disulfide (MoS$_2$), deposited on a gold substrate, and intercalated with cesium (Cs) in ultra-clean conditions (ultrahigh vacuum). We show that intercalation decouples MoS$_2$ from its substrate. We reveal electron transfer from Cs to MoS$_2$, relative changes in the energy of the valence band maxima, and electronic disorder induced by structural disorder in the intercalated Cs layer. Besides, we find an abnormal lattice expansion of MoS$_2$, which we relate to immediate vicinity of Cs. Intercalation is thermally activated, and so is the reverse process of de-intercalation. Our work opens the route to a microscopic understanding of a process of relevance in several possible future technologies, and shows a way to manipulate the properties of two-dimensional dichalcogenides by "under-cover" functionalization.
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Submitted 10 June, 2020;
originally announced June 2020.
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Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe$_2$
Authors:
Pierre Mallet,
Florian Chiapello,
Hanako Okuno,
Hervé Boukari,
Matthieu Jamet,
Jean-Yves Veuillen
Abstract:
Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ d…
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Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V$_W$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V$_W$ dopants.
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Submitted 11 February, 2020;
originally announced February 2020.
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Spin-orbitronics at a topological insulator-semiconductor interface
Authors:
T. Guillet,
C. Zucchetti,
A. Marchionni,
A. Hallal,
P. Biagioni,
C. Vergnaud,
A. Marty,
M. Finazzi,
F. Ciccacci,
M. Chshiev,
F. Bottegoni,
M. Jamet
Abstract:
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi…
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Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.
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Submitted 24 November, 2019;
originally announced November 2019.
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New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe$_2$ monolayers
Authors:
Céline Vergnaud,
Minh-Tuan Dau,
Benjamin Grévin,
Christophe Licitra,
Alain Marty,
Hanako Okuno,
Matthieu Jamet
Abstract:
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature ($>$900$^{\circ}$C) and very low deposition rate (…
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The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature ($>$900$^{\circ}$C) and very low deposition rate ($<$0.015 nm/min) are necessary to obtain high quality WSe$_2$ films. The domain size can be larger than 1 $μ$m and the in-plane rotational misorientation less than $\pm$0.5$^{\circ}$. The WSe$_2$ monolayer is also robust against air exposure, can be easily transferred over 1 cm$^2$ on SiN/SiO$_2$ and exhibits strong photoluminescence signal. Moreover, by combining grazing incidence x-ray diffraction and transmission electron microscopy, we could detect the presence of few misoriented grains. A two-dimensional model based on atomic coincidences between the WSe$_2$ and mica crystals allows us to explain the formation of these misoriented grains and gives suggestion to remove them and further improve the crystalline quality of WSe$_2$.
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Submitted 17 October, 2019;
originally announced October 2019.
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The valley Nernst effect in WSe$_2$
Authors:
Minh-Tuan Dau,
Céline Vergnaud,
Alain Marty,
Cyrille Beigné,
Serge Gambarelli,
Vincent Maurel,
Timothée Journot,
Bérangère Hyot,
Thomas Guillet,
Benjamin Grévin,
Hanako Okuno,
Matthieu Jamet
Abstract:
The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of…
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The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe$_{2}$ mono-multi-layers and the ferromagnetic resonance-spin pumping technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe$_{2}$ that we detect electrically at room temperature. The valley Nernst coefficient is in very good agreement with the predicted value.
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Submitted 17 October, 2019;
originally announced October 2019.
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Van der Waals epitaxy of Mn-doped MoSe$_2$ on mica
Authors:
M. T. Dau,
C. Vergnaud,
M. Gay,
C. J. Alvarez,
A. Marty,
C. Beigné,
D. Jalabert,
J. -F. Jacquot,
O. Renault,
H. Okuno,
M. Jamet
Abstract:
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bottom-up strategy using molecular beam epitaxy to grow and dope large-area (cm$^2$) few-layer MoSe$_2$ with Mn as a magnetic dopant. High-quality Mn-do…
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The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bottom-up strategy using molecular beam epitaxy to grow and dope large-area (cm$^2$) few-layer MoSe$_2$ with Mn as a magnetic dopant. High-quality Mn-doped MoSe$_2$ layers are obtained for Mn content of less than 5 % (atomic). When increasing the Mn content above 5 % we observe a clear transition from layer-by-layer to cluster growth. Magnetic measurements involving a transfer process of the cm$^2$-large doped layers on 100-micron-thick silicon substrate, show plausible proof of high-temperature ferromagnetism of 1 % and 10 % Mn-doped MoSe$_2$. Although we could not point to a correlation between magnetic and electrical properties, we demonstrate that the transfer process described in this report permits to achieve conventional electrical and magnetic measurements on the doped layers transferred on any substrate. Therefore, this study provides a promising route to characterize stable ferromagnetic 2D layers, which is broadening the current start-of-the-art of 2D materials-based applications.
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Submitted 11 June, 2019;
originally announced June 2019.
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Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)
Authors:
T. Guillet,
C. Zucchetti,
Q. Barbedienne,
A. Marty,
G. Isella,
L. Cagnon,
C. Vergnaud,
N. Reyren,
J. -M. George,
A. Fert,
M. Jamet
Abstract:
Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term which is linear in current density j and magnetic field B, henc…
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Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term which is linear in current density j and magnetic field B, hence odd in j and B, corresponding to a unidirectional magnetoresistance. At 15 K, for I = 10 $μ$A (or j = 0.33 A/m) and B = 1 T, it represents 0.5 % of the zero field resistance, a much higher value compared to previous reports on unidirectional magnetoresistance. We ascribe the origin of this magnetoresistance to the interplay between the externally applied magnetic field and the current-induced pseudo-magnetic field in the spin-splitted subsurface states of Ge(111). This unidirectional magnetoresistance is independent of the current direction with respect to the Ge crystal axes. It progressively vanishes, either using a negative gate voltage due to carrier activation into the bulk (without spin-splitted bands), or by increasing the temperature due to the Rashba energy splitting of the subsurface states lower than $\sim$58 k$_B$. The highly developed technologies on semiconductor platforms would allow the rapid optimization of devices based on this phenomenon.
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Submitted 11 June, 2019;
originally announced June 2019.
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Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Si
Authors:
C. Vergnaud,
M. Gay,
C. Alvarez,
M. -T. Dau,
F. Pierre,
D. Jalabert,
C. Licitra,
A. Marty,
C. Beigné,
B. Grévin,
O. Renault,
H. Okuno,
M. Jamet
Abstract:
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an impo…
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Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe$_2$ mono- and multi-layers on SiO$_2$/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO$_2$/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe$_2$ monolayers over 1 cm$^2$. To grow MoSe$_2$ multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe$_2$ monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe$_2$ multilayers over 1 cm$^2$. Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in MoSe$_2$ bilayers.
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Submitted 7 June, 2019;
originally announced June 2019.
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Magnetotransport in Bi$_2$Se$_3$ thin films epitaxially grown on Ge(111)
Authors:
T. Guillet,
A. Marty,
C. Beigné,
C. Vergnaud,
M. -T. Dau,
P. Noël,
J. Frigerio,
G. Isella,
M. Jamet
Abstract:
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to…
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Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to the electron spin such as a spin diffusion length of several micrometers at room temperature. By growing Bi$_2$Se$_3$ on germanium, we aim at combining the long spin diffusion length of Ge with the spin-momentum locking at the surface of Bi$_2$Se$_3$. We first performed a thorough structural analysis of Bi$_2$Se$_3$ films using electron and x-ray diffraction as well as atomic force microscopy. Then, magnetotransport measurements at low temperature showed the signature of weak antilocalization as a result of two-dimensional transport in the topologically protected surface states of Bi$_2$Se$_3$. Interestingly, the magnetotransport measurements also point out that the conduction channel can be tuned between the Bi$_2$Se$_3$ film and the Ge layer underneath by means of the bias voltage or the applied magnetic field. This result suggests that the Bi$_2$Se$_3$/Ge junction is a promising candidate for tuning spin-related phenomena at interfaces between TIs and semiconductors.
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Submitted 2 August, 2018;
originally announced August 2018.
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ARPES and transport studies of the elemental topological insulator $α$-Sn
Authors:
Quentin Barbedienne,
Julien Varignon,
Nicolas Reyren,
Alain Marty,
Celine Vergnaud,
Matthieu Jamet,
Carmen Gomez-Carbonell,
Aristide Lemaître,
Patrick Le Fèvre,
François Bertran,
Amina Taleb-Ibrahimi,
Henri Jaffrès,
Jean-Marie George,
Albert Fert
Abstract:
Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion clo…
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Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion close to the Fermi level in thin (0\,0\,1)-oriented epitaxially strained films of $α$-Sn, for different film thicknesses as well as for different capping layers (Al, AlO$_x$ and MgO). Indeed a proper capping layer is necessary to be able to use $α$-Sn surface states for spintronics applications. In contrast with free surfaces or surfaces coated with Ag, coating the $α$-Sn surface with Al or AlO$_x$ leads to a drop of the Fermi level below the Dirac point, an important consequence for transport is the presence of bulk states at the Fermi level. $α$-Sn films coated by AlO$_x$ are studied by electrical magnetotransport: despite clear evidence of surface states revealed by Shubnikov-de Haas oscillations, an important part of the magneto-transport properties is governed by "bulk" electronic states attributed to the $Γ8$ band, as suggested by {\it ab-initio} calculations.
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Submitted 30 November, 2018; v1 submitted 30 July, 2018;
originally announced July 2018.
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Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films
Authors:
C. Zucchetti,
M. -T Dau,
F. Bottegoni,
C. Vergnaud,
T. Guillet,
A. Marty,
C. Beigné,
S. Gambarelli,
A. Picone,
A. Calloni,
G. Bussetti,
A. Brambilla,
L. Duò,
F. Ciccacci,
P. K. Das,
J. Fujii,
I. Vobornik,
M. Finazzi,
M. Jamet
Abstract:
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conversion efficiency, the scalability down to the nanometer scale and the integrability with opto-electronic and spintronic devices. Here we show that, whe…
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Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conversion efficiency, the scalability down to the nanometer scale and the integrability with opto-electronic and spintronic devices. Here we show that, when an ultrathin Bi film is epitaxially grown on top of a Ge(111) substrate, quantum size effects arising in nanometric Bi islands drastically boost the SCI efficiency, even at room temperature. Using x-ray diffraction (XRD), scanning tunneling microscopy (STM) and spin- and angle-resolved photoemission (S-ARPES) we obtain a clear picture of the film morphology, crystallography and electronic structure. We then exploit the Rashba-Edelstein effect (REE) and inverse Rashba-Edelstein effect (IREE) to directly quantify the SCI efficiency using optical and electrical spin injection.
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Submitted 4 May, 2018;
originally announced May 2018.
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Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
Authors:
M. T. Dau,
C. Vergnaud,
A. Marty,
F. Rortais,
C. Beigné,
H. Boukari,
E. Bellet-Amalric,
V. Guigoz,
O. Renault,
C. Alvarez,
H. Okuno,
P. Pochet,
M. Jamet
Abstract:
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects a…
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Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects and boundaries. Temperature and magnetic field dependent resistivity measurements unveil a carrier hopping character described within two-dimensional variable range hopping mechanism. Moreover, a negative magnetoresistance was observed, stressing a fascinating feature of the charge transport under the application of a magnetic field in the layered MoSe 2 system. This negative magnetoresistance observed at millimeter-scale is similar to that observed recently at room temperature inWS2 flakes at a micrometer scale [Zhang et al., Appl. Phys. Lett. 108, 153114 (2016)]. This scalability highlights the fact that the underlying physical mechanism is intrinsic to these two-dimensional materials and occurs at very short scale.
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Submitted 16 February, 2017;
originally announced February 2017.
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Non-local opto-electrical spin injection and detection in germanium at room temperature
Authors:
Fabien Rortais,
Carlo Zucchetti,
Lavinia Ghirardini,
Alberto Ferrari,
Céline Vergnaud,
Julie Widiez,
Alain Marty,
Jean-Philippe Attané,
Henri Jaffrès,
Jean-Marie George,
Michele Celebrano,
Giovanni Isella,
Franco Ciccacci,
Marco Finazzi,
Federico Bottegoni,
Matthieu Jamet
Abstract:
Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best…
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Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the long electron spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin injection and detection within the telecommunication window. In this letter, we demonstrate injection of pure spin currents (\textit{i.e.} with no associated transport of electric charges) in germanium, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, exploiting the ability of lithographed nanostructures to manipulate the distribution of circularly-polarized light in the semiconductor. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect (ISHE) across a platinum stripe. These results broaden the palette of tools available for the realization of opto-spintronic devices.
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Submitted 29 December, 2016;
originally announced December 2016.
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Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
Authors:
E. Lesne,
Y. Fu,
S. Oyarzun,
J. C. Rojas-Sanchez,
D. C. Vaz,
H. Naganuma,
G. Sicoli,
J. -P. Attane,
M. Jamet,
E. Jacquet,
J. -M. George,
A. Barthelemy,
H. Jaffres,
A. Fert,
M. Bibes,
L. Vila
Abstract:
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices,…
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The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES.
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Submitted 21 September, 2016;
originally announced September 2016.
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Spin-pumping into surface states of topological insulator α-Sn, spin to charge conversion at room temperature
Authors:
J. -C. Rojas-Sánchez,
S. Oyarzun,
Y. Fu,
A. Marty,
C. Vergnaud,
S. Gambarelli,
L. Vila,
M. Jamet,
Y. Ohtsubo,
A. Taleb-Ibrahimi,
P. Le Fèvre,
F. Bertran,
N. Reyren,
J. -M. George,
A. Fert
Abstract:
We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant…
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We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into α-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it.
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Submitted 9 September, 2015;
originally announced September 2015.
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Comparison of the use of NiFe and CoFe as electrodes for metallic lateral spin-valves
Authors:
G. Zahnd,
L. Vila,
T. V. Pham,
A. Marty,
P. Laczkowski,
W. Savero Torres,
C. Beigné,
C. Vergnaud,
M. Jamet,
J. -P. Attané
Abstract:
Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin sig…
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Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin signal dependence with the distance between the ferromagnetic electrodes has been analyzed using both a 1D spin transport model and finite elements method simulations. The enhancement of the spin signal amplitude when using CoFe electrodes can be explained by a higher effective polarization.
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Submitted 12 November, 2015; v1 submitted 3 July, 2015;
originally announced July 2015.
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Calculation method of spin accumulations and spin signals in nanostructures using spin resistors
Authors:
W. Savero Torres,
A. Marty,
P. Laczkowski,
L. Vila,
M. Jamet,
J-P. Attané
Abstract:
The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carb…
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The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carbon allotropes.
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Submitted 8 June, 2015; v1 submitted 3 June, 2015;
originally announced June 2015.
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Spinodal nanodecomposition in magnetically doped semiconductors
Authors:
T. Dietl,
K. Sato,
T. Fukushima,
A. Bonanni,
M. Jamet,
A. Barski,
S. Kuroda,
M. Tanaka,
Pham Nam Hai,
H. Katayama-Yoshida
Abstract:
This review presents the recent progress in computational materials design, experimental realization, and control methods of spinodal nanodecomposition under three- and two-dimensional crystal-growth conditions in spintronic materials, such as magnetically doped semiconductors. The computational description of nanodecomposition, performed by combining first-principles calculations with kinetic Mon…
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This review presents the recent progress in computational materials design, experimental realization, and control methods of spinodal nanodecomposition under three- and two-dimensional crystal-growth conditions in spintronic materials, such as magnetically doped semiconductors. The computational description of nanodecomposition, performed by combining first-principles calculations with kinetic Monte Carlo simulations, is discussed together with extensive electron microscopy, synchrotron radiation, scanning probe, and ion beam methods that have been employed to visualize binodal and spinodal nanodecomposition (chemical phase separation) as well as nanoprecipitation (crystallographic phase separation) in a range of semiconductor compounds with a concentration of transition metal (TM) impurities beyond the solubility limit. The role of growth conditions, co-doping by shallow impurities, kinetic barriers, and surface reactions in controlling the aggregation of magnetic cations is highlighted. According to theoretical simulations and experimental results the TM-rich regions appear either in the form of nanodots (the {\em dairiseki} phase) or nanocolumns (the {\em konbu} phase) buried in the host semiconductor. Particular attention is paid to Mn-doped group III arsenides and antimonides, TM-doped group III nitrides, Mn- and Fe-doped Ge, and Cr-doped group II chalcogenides, in which ferromagnetic features persisting up to above room temperature correlate with the presence of nanodecomposition and account for the application-relevant magneto-optical and magnetotransport properties of these compounds. Finally, it is pointed out that spinodal nanodecomposition can be viewed as a new class of bottom-up approach to nanofabrication.
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Submitted 22 December, 2015; v1 submitted 27 December, 2014;
originally announced December 2014.
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Core-shell nanostructure in a Ge_0.9Mn_0.1 film from structural and magnetic measurements
Authors:
P. Dalmas de Reotier,
E. Prestat,
P. Bayle-Guillemaud,
A. Barski,
A. Marty,
M. Jamet,
A. Suter,
T. Prokscha,
Z. Salman,
E. Morenzoni,
A. Yaouanc
Abstract:
We have characterized a film of Ge_0.9Mn_0.1 forming self-organized nanocolumns perpendicular to the Ge substrate with high resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy, and bulk magnetization and positive muon spin rotation and relaxation (muSR) measurements. The Mn-rich nanocolumns form a triangular lattice with no detectable Mn atoms in th…
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We have characterized a film of Ge_0.9Mn_0.1 forming self-organized nanocolumns perpendicular to the Ge substrate with high resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy, and bulk magnetization and positive muon spin rotation and relaxation (muSR) measurements. The Mn-rich nanocolumns form a triangular lattice with no detectable Mn atoms in the matrix. They consist of cores surrounded by shells. The combined analysis of bulk magnetization and muSR data enables us to characterize the electronic and magnetic properties of both the cores and shells. The discovered phase separation of the columns between a core and a shell is probably relevant for other transition-metal doped semiconductors.
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Submitted 16 May, 2014;
originally announced May 2014.
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Spin Pumping and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces
Authors:
J. -C. Rojas-Sánchez,
N. Reyren,
P. Laczkowski,
W. Savero,
J. -P. Attané,
C. Deranlot,
M. Jamet,
J. -M. George,
L. Vila,
H. Jaffrès
Abstract:
Through combined ferromagnetic resonance, spin-pumping and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface d…
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Through combined ferromagnetic resonance, spin-pumping and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage.
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Submitted 17 March, 2014; v1 submitted 10 December, 2013;
originally announced December 2013.
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Steadfast perpendicular exchange coupling in an ultrathin CoO/PtFe double-layer: strain and spin orientation
Authors:
A. D. Lamirand,
M. M. Soares,
A. Y. Ramos,
H. C. N. Tolentino,
M. DeSantis,
J. C. Cezar,
A. de Siervo,
M. Jamet
Abstract:
We report on the exchange coupling and magnetic properties of a strained ultrathin CoO/PtFe double-layer with perpendicular magnetic anisotropy. The cobalt oxide growth by reactive molecular beam epitaxy on a Pt-terminated PtFe/Pt(001) surface gives rise to an hexagonal surface and a monoclinic distorted CoO 3nm film at room temperature. This distorted ultrathin CoO layer couples with the PtFe(001…
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We report on the exchange coupling and magnetic properties of a strained ultrathin CoO/PtFe double-layer with perpendicular magnetic anisotropy. The cobalt oxide growth by reactive molecular beam epitaxy on a Pt-terminated PtFe/Pt(001) surface gives rise to an hexagonal surface and a monoclinic distorted CoO 3nm film at room temperature. This distorted ultrathin CoO layer couples with the PtFe(001) layer establishing a robust perpendicular exchange bias shift. Soft x-ray absorption spectroscopy provides a full description of the spin orientations in the CoO/PtFe doublelayer. The exchange bias shift is preserved up to the Neel antiferromagnetic ordering temperature of TN=293 K. This unique example of selfsame value for blocking and ordering temperatures, yet identical to the bulk ordering temperature, is likely related to the original strain induced distortion and strengthened interaction between the two well-ordered spin layers.
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Submitted 20 September, 2013;
originally announced September 2013.
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Spin Pumping and Inverse Spin Hall Effect in Germanium
Authors:
J. -C. Rojas-Sánchez,
M. Cubukcu,
A. Jain,
C. Vergnaud,
C. Portemont,
C. Ducruet,
A. Barski,
A. Marty,
L. Vila,
J. -P. Attané,
E. Augendre,
G. Desfonds,
S. Gambarelli,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in parti…
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We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $\approx$0.001.
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Submitted 12 May, 2013;
originally announced May 2013.
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Mn Solid Solutions in Self-Assembled Ge/Si (001) Quantum Dot Heterostructures
Authors:
Joseph Kassim,
Christopher Nolph,
Matthieu Jamet,
Petra Reinke,
Jerrold Floro
Abstract:
Heteroepitaxial Ge0.98Mn0.02 quantum dots on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriche…
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Heteroepitaxial Ge0.98Mn0.02 quantum dots on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.
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Submitted 31 October, 2012;
originally announced November 2012.
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X-ray magnetic circular dichroism in (Ge,Mn) compounds: experiments and modeling
Authors:
Samuel Tardif,
Andrey Titov,
Emmanuel Arras,
Ivetta Slipukhina,
El-Kebir Hlil,
Salia Cherifi,
Yves Joly,
Matthieu Jamet,
André Barski,
Joel Cibert,
Erkin Kulatov,
Y. A. Uspenskii,
Pascal Pochet
Abstract:
X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L$_{2,3}$ edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early \textit{ab initio} studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of…
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X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L$_{2,3}$ edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early \textit{ab initio} studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of sign in the L$_{3}$ XMCD spectrum of Mn in Ge$_3$Mn$_5$, which is observed in experiments. In this work we demonstrate that this disagreement is partially related to an underestimation of the exchange splitting of Mn 2$p$ core states within the local density approximation. It is shown that the change in sign experimentally observed is reproduced if the exchange splitting is accurately calculated within the Hartree-Fock approximation, while the final states can be still described by the DFT. This approach is further used to calculate the XMCD in different (Ge,Mn) compounds. It demonstrates that the agreement between experimental and theoretical spectra can be improved by combining state of the art calculations for the core and valence states respectively.
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Submitted 17 October, 2013; v1 submitted 6 October, 2012;
originally announced October 2012.
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Electrical and thermal spin accumulation in germanium
Authors:
A. Jain,
C. Vergnaud,
J. Peiro,
J. C. Le Breton,
E. Prestat,
L. Louahadj,
C. Portemont,
C. Ducruet,
V. Baltz,
A. Marty,
A. Barski,
P. Bayle-Guillemaud,
L. Vila,
J. -P. Attané,
E. Augendre,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germa…
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In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel.
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Submitted 19 April, 2012;
originally announced April 2012.
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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
Authors:
A. Jain,
J. -C. Rojas-Sanchez,
M. Cubukcu,
J. Peiro,
J. C. Le Breton,
E. Prestat,
C. Vergnaud,
L. Louahadj,
C. Portemont,
C. Ducruet,
V. Baltz,
A. Barski,
P. Bayle-Guillemaud,
L. Vila,
J. -P. Attané,
E. Augendre,
G. Desfonds,
S. Gambarelli,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states…
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Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.
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Submitted 5 January, 2013; v1 submitted 29 March, 2012;
originally announced March 2012.
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Interface-driven phase separation in multifunctional materials: the case of GeMn ferromagnetic semiconductor
Authors:
Emmanuel Arras,
Frédéric Lançon,
Ivetta Slipukhina,
Éric Prestat,
Mauro Rovezzi,
Samuel Tardif,
Andrey Titov,
Pascale Bayle-Guillemaud,
Francesco D'Acapito,
André Barski,
Vincent Favre-Nicolin,
Matthieu Jamet,
Joël Cibert,
Pascal Pochet
Abstract:
We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in over-saturated AlCu alloys, and replace the Guinier-Preston zones in this new context. A new class of materials, the $α$ phases, is proposed to understand the…
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We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in over-saturated AlCu alloys, and replace the Guinier-Preston zones in this new context. A new class of materials, the $α$ phases, is proposed to understand the formation of the coherent precipitates observed in the GeMn system. The interplay between formation and interface energies is analyzed for these phases and for the structures usually considered in the literature. The existence of the alpha phases is assessed with both theoretical and experimental arguments.
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Submitted 23 March, 2012; v1 submitted 12 March, 2012;
originally announced March 2012.
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Origin of perpendicular anisotropy in thin Co/Pt bilayers grown on alumina
Authors:
L. Grenet,
C. Arm,
P. Warin,
S. Pouget,
A. Marty,
A. Brenac,
L. Notin,
P. Bayle-Guillemaud,
M. Jamet
Abstract:
We investigate in this paper the origin of perpendicular anisotropy in Co (1.6 nm)/Pt (3.0 nm) bilayers grown on alumina and annealed up to 650$^{\circ}$C. Above 350$^{\circ}$C, all layers exhibit perpendicular anisotropy. Then coercive fields increase linearly with annealing temperature following two different rates: 0.05 T/100$^{\circ}$C below 550$^{\circ}$C and 0.8 T/100$^{\circ}$C above. By ma…
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We investigate in this paper the origin of perpendicular anisotropy in Co (1.6 nm)/Pt (3.0 nm) bilayers grown on alumina and annealed up to 650$^{\circ}$C. Above 350$^{\circ}$C, all layers exhibit perpendicular anisotropy. Then coercive fields increase linearly with annealing temperature following two different rates: 0.05 T/100$^{\circ}$C below 550$^{\circ}$C and 0.8 T/100$^{\circ}$C above. By making careful structural characterizations using x-ray diffraction and transmission electron microscopy, we demonstrate the presence of short range correlation of L1$_{1}$ type below 550$^{\circ}$C whereas above 550$^{\circ}$C, L1$_{0}$ chemical ordering is observed. We conclude that perpendicular anisotropy observed in Co/Pt bilayers grown on alumina and annealed may not only be due to interface anisotropy as usually invoked but also to CoPt alloying and chemical ordering that take place during post-growth annealing.
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Submitted 12 October, 2011;
originally announced October 2011.
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Electrical spin injection and detection in Germanium using three terminal geometry
Authors:
A. Jain,
L. Louahadj,
J. Peiro,
J. C. Le Breton,
C. Vergnaud,
A. Barski,
C. Beigné,
L. Notin,
A. Marty,
V. Baltz,
S. Auffret,
E. Augendre,
H. Jaffrès,
J. M. George,
M. Jamet
Abstract:
In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interfa…
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In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.
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Submitted 18 July, 2011;
originally announced July 2011.