-
Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride
Authors:
C. Vergnaud,
V. Tiwari,
L. Ren,
T. Taniguchi,
K. Watanabe,
H. Okuno,
I. Gomes de Moraes,
A. Marty,
C. Robert,
X. Marie,
M. Jamet
Abstract:
Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy…
▽ More
Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy in the van der Waals regime. It constitutes the first step towards the development of large area single crystalline TMDs encapsulated in hBN for potential integration in electronic or opto-electronic devices. For this purpose, we define a two-step growth strategy to achieve monolayer-thick MoSe$_2$ grains on hBN flakes. The high quality of MoSe$_2$ allows us to detect very narrow PL linewidth down to 5.5 meV at 13 K, comparable to the one of encapsulated exfoliated MoSe$_2$ flakes. Moreover, sizeable PL can be detected at room temperature as well as clear reflectivity signatures of A, B and charged excitons.
△ Less
Submitted 17 July, 2024;
originally announced July 2024.
-
Development and optimization of large-scale integration of 2D material in memristors
Authors:
Clotilde Ligaud,
Lucie Le Van-Jodin,
Bruno Reig,
Pierre Trousset,
Paul Brunet,
Michaël Bertucchi,
Clémence Hellion,
Nicolas Gauthier,
Le Van-Hoan,
Hanako Okuno,
Djordje Dosenovic,
Stéphane Cadot,
Remy Gassilloud,
Matthieu Jamet
Abstract:
Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protoc…
▽ More
Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protocols are developed for the fabrication of MoS$_2$-based memristors, and the resulting performances are compared. The quality of MoS$_2$ at each stage of the process is characterized by Raman spectroscopy and x-ray photoemission spectroscopy. In the first protocol, the structure of MoS$_2$ is preserved during transfer and patterning processes. However, a polymer layer with a minimum thickness of 3 nm remains at the surface of MoS$_2$ limiting the electrical switching performances. In the second protocol, the contamination layer is completely removed resulting in improved electrical switching performances and reproducibility. Based on physico-chemical and electrical results, the switching mechanism is discussed in terms of conduction through grain boundaries.
△ Less
Submitted 9 May, 2024;
originally announced May 2024.
-
Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe$_2$ using 4D-STEM
Authors:
D. Dosenovic,
K. Sharma,
S. Dechamps,
J. -L. Rouviere,
Y. Lu,
A. Mordant,
M. den Hertog,
L. Genovese,
S. M. -M. Dubois,
J. -C. Charlier,
M. Jamet,
A. Marty,
H. Okuno
Abstract:
There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types o…
▽ More
There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types of defects. A thorough atomic-level analysis is essential to fully understand these mechanisms. In this work, vanadium doped WSe$_2$ monolayer grown by molecular beam epitaxy is investigated using four-dimensional scanning transmission electron microscopy (4D-STEM). Through center of mass-based reconstruction, atomic scale maps are produced, allowing the visualization of both the electric field and the electrostatic potential around individual V atoms. To provide quantitative insights, these results are successfully compared with multislice image simulations based on ab initio calculations, accounting for lens aberrations. Finally, a negative charge around the V dopants is detected as a drop in the electrostatic potential, unambiguously demonstrating that 4D-STEM can be used to detect and to accurately analyze single dopant charge states in semiconducting 2D materials.
△ Less
Submitted 13 October, 2023;
originally announced October 2023.
-
Development of the Thomson scattering measurement system for cascade arc device with indirectly heated hollow cathode
Authors:
K. Yamasaki,
K. Okuda,
J. Kono,
A. Saito,
D. Mori,
R. Suzuki,
Y. Kambara,
R. Hamada,
S. Namba,
K. Tomita,
Y. Pan,
N. Tamura,
C. Suzuki,
H. Okuno
Abstract:
We have developed a Thomson scattering measurement system for the cascade arc discharge device designed for the plasma window (PW) application study. The PW is one of the plasma application techniques that sustain the steep pressure gradient between high pressure (10-100 kPa) and a vacuum environment due to the thermal energy of the plasma. Since the plasma thermal energy is the essential paramete…
▽ More
We have developed a Thomson scattering measurement system for the cascade arc discharge device designed for the plasma window (PW) application study. The PW is one of the plasma application techniques that sustain the steep pressure gradient between high pressure (10-100 kPa) and a vacuum environment due to the thermal energy of the plasma. Since the plasma thermal energy is the essential parameter for the pressure separation capability of PW, we installed the Thomson scattering measurement system to observe the electron density and temperature within the anode and cathode of the PW for the detailed analysis of the pressure separation capability. The frequency-doubled Nd:YAG laser (532 nm, 200 mJ, 8 ns) was employed for the probe laser. The scattered light was fed to the triple grating spectrometer. The notch filter between the first and second grating eliminated the stray light, realizing a sufficiently high signal-to-noise ratio. The Thomson scattering measurement system successfully obtained the electron density and temperature of the cascade arc plasma at 20 mm downstream from the tip of the cathode. The installed system successfully obtained the Thomson scattering spectrum and showed that the electron density increased from $2\times10^{19} {\rm m}^{-3}$ to $7\times10^{19} {\rm m}^{-3}$ with the discharge power, while the electron temperature was almost constant at about 2 eV. The obtained data successfully contributed to the study of the pressure separation capability of the PW.
△ Less
Submitted 10 October, 2023; v1 submitted 30 August, 2023;
originally announced August 2023.
-
Giant atomic swirl in graphene bilayers with biaxial heterostrain
Authors:
F. Mesple,
N. R. Walet,
G. Trambly de Laissardière,
F. Guinea,
D. Dosenovic,
H. Okuno,
C. Paillet,
A. Michon,
C. Chapelier,
V. T. Renard
Abstract:
The study of moiré engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects asso…
▽ More
The study of moiré engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects associated with atomic relaxation. Twist is now used routinely to adjust the properties of two-dimensional materials. Here, we investigate a new type of moiré superlattice in bilayer graphene when one layer is biaxially strained with respect to the other - so-called biaxial heterostrain. Scanning tunneling microscopy measurements uncover spiraling electronic states associated with a novel symmetry-breaking atomic reconstruction at small biaxial heterostrain. Atomistic calculations using experimental parameters as inputs reveal that a giant atomic swirl forms around regions of aligned stacking to reduce the mechanical energy of the bilayer. Tight-binding calculations performed on the relaxed structure show that the observed electronic states decorate spiraling domain wall solitons as required by topology. This study establishes biaxial heterostrain as an important parameter to be harnessed for the next step of moiré engineering in van der Waals multilayers.
△ Less
Submitted 25 August, 2023;
originally announced August 2023.
-
Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers
Authors:
Djordje Dosenovic,
Samuel Dechamps,
Celine Vergnaud,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Luigi Genovese,
Jean-Luc Rouviere,
Martien den Hertog,
Lucie Le Van-Jodin,
Matthieu Jamet,
Alain Marty,
Hanako Okuno
Abstract:
Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be descri…
▽ More
Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be described as a patchwork of coalesced domains. Here, we report multi-scale and multistructural analysis on highly oriented epitaxial WS$_2$ and WSe$_2$ monolayers using scanning transmission electron microscopy (STEM) techniques. Characteristic domain junctions are first identified and classified based on the detailed atomic structure analysis using aberration corrected STEM imaging. Mapping orientation, polar direction and phase at the micrometer scale using four-dimensional STEM enabled to access the density and the distribution of the specific domain junctions. Our results validate a readily applicable process for the study of highly oriented epitaxial transition metal dichalcogenides, providing an overview of synthesized materials from large scale down to atomic scale with multiple structural information.
△ Less
Submitted 8 June, 2023;
originally announced June 2023.
-
Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
Authors:
K. Abdukayumov,
M. Mičica,
F. Ibrahim,
C. Vergnaud,
A. Marty,
J. -Y. Veuillen,
P. Mallet,
I. Gomes de Moraes,
D. Dosenovic,
A. Wright,
J. Tignon,
J. Mangeney,
A. Ouerghi,
V. Renard,
F. Mesple,
F. Bonell,
H. Okuno,
M. Chshiev,
J. -M. George,
H. Jaffrès,
S. Dhillon,
M. Jamet
Abstract:
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t…
▽ More
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission.
△ Less
Submitted 11 May, 2023;
originally announced May 2023.
-
Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials
Authors:
Quentin Guillet,
Libor Vojacek,
Djordje Dosenovic,
Fatima Ibrahim,
Herve Boukari,
Jing Li,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent Renard,
Jean-Francois Jacquot,
Denis Jalabert,
Hanako Okuno,
Mairbek Chshiev,
Celine Vergnaud,
Frederic Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA a…
▽ More
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface.
△ Less
Submitted 6 March, 2023;
originally announced March 2023.
-
The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM
Authors:
Bruno C da Silva,
Zahra S Momtaz,
Lucas Bruas,
Jean-Luc Rouviére,
Hanako Okuno,
David Cooper,
Martien I Den-Hertog
Abstract:
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of different STEM modes and the trade-off between spatial resolution and electric field sensitivity are studied. Two acquisition modes are compared: nanobeam and low magnification (LM) modes. A thermal noise free Medipix3 direct…
▽ More
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of different STEM modes and the trade-off between spatial resolution and electric field sensitivity are studied. Two acquisition modes are compared: nanobeam and low magnification (LM) modes. A thermal noise free Medipix3 direct electron detector with high speed acquisition has been used to study the influence of low electron beam current and millisecond dwell times on the measured electric field and standard deviation. It is shown that LM conditions can underestimate the electric field values due to a bigger probe size used but provide an improvement of almost one order of magnitude on the signal-to-noise ratio, leading to a detection limit of 0.011MV/cm. It is observed that the CoM results do not vary with acquisition time or electron dose as low as 24 $e^-/A^2$, showing that the electron beam does not influence the built-in electric field and that this method can be robust for studying beam sensitive materials, where a low dose is needed.
△ Less
Submitted 2 November, 2022;
originally announced November 2022.
-
Design report of the KISS-II facility for exploring the origin of uranium
Authors:
Takamichi Aoki,
Yoshikazu Hirayama,
Hironobu Ishiyama,
SunChan Jeong,
Sota Kimura,
Yasuhiro Makida,
Hiroari Miyatake,
Momo Mukai,
Shunji Nishimura,
Katsuhisa Nishio,
Toshitaka Niwase,
Tatsuhiko Ogawa,
Hiroki Okuno,
Marco Rosenbusch,
Peter Schury,
Yutaka Watanabe,
Michiharu Wada
Abstract:
One of the critical longstanding issues in nuclear physics is the origin of the heavy elements such as platinum and uranium. The r-process hypothesis is generally supported as the process through which heavy elements are formed via explosive rapid neutron capture. Many of the nuclei involved in heavy-element synthesis are unidentified, short-lived, neutron-rich nuclei, and experimental data on the…
▽ More
One of the critical longstanding issues in nuclear physics is the origin of the heavy elements such as platinum and uranium. The r-process hypothesis is generally supported as the process through which heavy elements are formed via explosive rapid neutron capture. Many of the nuclei involved in heavy-element synthesis are unidentified, short-lived, neutron-rich nuclei, and experimental data on their masses, half-lives, excited states, decay modes, and reaction rates with neutron etc., are incredibly scarce. The ultimate goal is to understand the origin of uranium. The nuclei along the pathway to uranium in the r-process are in "Terra Incognita". In principle, as many of these nuclides have more neutrons than 238U, this region is inaccessible via the in-flight fragmentation reactions and in-flight fission reactions used at the present major facilities worldwide. Therefore, the multi-nucleon transfer (MNT) reaction, which has been studied at the KEK Isotope Separation System (KISS), is attracting attention. However, in contrast to in-flight fission and fragmentation, the nuclei produced by the MNT reaction have characteristic kinematics with broad angular distribution and relatively low energies which makes them non-amenable to in-flight separation techniques. KISS-II would be the first facility to effectively connect production, separation, and analysis of nuclides along the r-process path leading to uranium. This will be accomplished by the use of a large solenoid to collect MNT products while rejecting the intense primary beam, a large helium gas catcher to thermalize the MNT products, and an MRTOF mass spectrograph to perform mass analysis and isobaric purification of subsequent spectroscopic studies. The facility will finally allow us to explore the neutron-rich nuclides in this Terra Incognita.
△ Less
Submitted 7 November, 2022; v1 submitted 22 September, 2022;
originally announced September 2022.
-
Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM
Authors:
Bruno C. da Silva,
Zahra S. Momtaz,
Eva Monroy,
Hanako Okuno,
Jean-Luc Rouviere,
David Cooper,
Martien I. den-Hertog
Abstract:
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must tak…
▽ More
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must take into account the precise evolution of the concentration of dopants around the junction, since the sharpness of the dopant transition directly influences the built-in potential and the maximum electric field. Here, a contacted silicon p-n junction is studied through in-situ biased 4D-STEM. Measurements of electric field, built-in voltage, depletion region width and charge density in the space charge region are combined with analytical equations as well as finite-element simulations in order to evaluate the quality of the junction interface. The nominally-symmetric, highly doped ($N_A = N_D = 9\space x \space10^{18} cm^{-3}$) junction presents an electric field and built-in voltage much lower than expected for an abrupt junction. These experimental results are consistent with electron holography data. All measured junction parameters are compatible with the presence of an intermediate region with a graded profile of the dopants at the p-n interface. This hypothesis is also consistent with the evolution of the electric field with bias. These results demonstrate that in-situ biased 4D-STEM enables a better understanding of the electrical properties of semiconductor p-n junctions with nm-scale resolution.
△ Less
Submitted 20 September, 2022;
originally announced September 2022.
-
Report of the Snowmass'21 Workshop on High-Power Cyclotrons and FFAs
Authors:
Daniel Winklehner,
Andreas Adelmann,
Jose R. Alonso,
Luciano Calabretta,
Hiroki Okuno,
Thomas Planche,
Malek Haj Tahar
Abstract:
This whitepaper summarizes and the state of the field of high-power cyclotrons and FFAs as discussed by international experts during a three-day workshop of the same name. The workshop was held online from Sep 7 to Sep 9, 2021 as part of the US Snowmass'21 Community Exercise, specifically the Accelerator Frontier (AF) and the subpanel Accelerators for Neutrinos (AF02). Thus, we put emphasis on the…
▽ More
This whitepaper summarizes and the state of the field of high-power cyclotrons and FFAs as discussed by international experts during a three-day workshop of the same name. The workshop was held online from Sep 7 to Sep 9, 2021 as part of the US Snowmass'21 Community Exercise, specifically the Accelerator Frontier (AF) and the subpanel Accelerators for Neutrinos (AF02). Thus, we put emphasis on the application of high-power cyclotrons in particle physics, specifically neutrino physics, and as drivers for muon production. In the introduction, we discuss the role of cyclotrons for particle physics, and later we highlight existing and planned experiments in the corresponding sections. However, as these same accelerators have important applications in the fields of isotope production - both for research and medicine - and possibly even in energy research, by providing beam to demonstrator experiments in the areas of Accelerator Driven Systems (ADS), we include these far-reaching topics to provide a full picture of the status and applications of high-power cyclotrons. Furthermore, Fixed Field Alternating Gradient accelerators (FFAs) have recently seen renewed interest. They are in many respects (basic operating principles) similar to cyclotrons and have thus been included in this workshop and whitepaper as well. We are discussing current projects and whether FFAs have the prospect of becoming high-intensity machines.
△ Less
Submitted 15 March, 2022;
originally announced March 2022.
-
High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)
Authors:
Frédéric Bonell,
Alain Marty,
Céline Vergnaud,
Vincent Consonni,
Hanako Okuno,
Abdelkarim Ouerghi,
Hervé Boukari,
Matthieu Jamet
Abstract:
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers…
▽ More
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and X-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2V 1s-1 at room temperature and up to 447 cm2V-1s-1 at low temperature.
△ Less
Submitted 16 September, 2021;
originally announced September 2021.
-
Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2
Authors:
Mário Ribeiro,
Giulio Gentile,
Alain Marty,
Djordje Dosenovic,
Hanako Okuno,
Céline Vergnaud,
Jean-François Jacquot,
Denis Jalabert,
Danilo Longo,
Philippe Ohresser,
Ali Hallal,
Mairbek Chshiev,
Olivier Boulle,
Frédéric Bonell,
Matthieu Jamet
Abstract:
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or abo…
▽ More
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room-temperature and the ability to grow films over large areas. Here we demonstrate the large-area growth of single-crystal ultrathin films of stoichiometric Fe5GeTe2 on an insulating substrate using molecular beam epitaxy. Magnetic measurements show the persistence of soft ferromagnetism up to room temperature, with a Curie temperature of 293 K, and a weak out-of-plane magnetocrystalline anisotropy. Surface, chemical, and structural characterizations confirm the layer-by-layer growth, 5:1:2 Fe:Ge:Te stoichiometric elementary composition, and single crystalline character of the films.
△ Less
Submitted 24 June, 2021;
originally announced June 2021.
-
Coexistence of ferromagnetism and spin-orbit coupling by incorporation of platinum in two-dimensional VSe$_2$
Authors:
E. Vélez-Fort,
A. Hallal,
R. Sant,
T. Guillet,
K. Abdukayumov,
A. Marty,
C. Vergnaud,
J. -F. Jacquot,
D. Jalabert,
J. Fujii,
I. Vobornik,
J. Rault,
N. B. Brookes,
D. Longo,
P. Ohresser,
A. Ouerghi,
J. -Y. Veuillen,
P. Mallet,
H. Boukari,
H. Okuno,
M. Chshiev,
F. Bonell,
M. Jamet
Abstract:
We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homo…
▽ More
We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homogeneous 2D alloy restores ferromagnetic order with Curie temperatures of 6 K for 5 monolayers and 25 K for one monolayer of V$_{0.65}$Pt$_{0.35}$Se$_2$. Moreover, the presence of platinum atoms gives rise to Rashba spin-orbit coupling in (V,Pt)Se$_2$ providing an original platform to study the interplay between ferromagnetism and spin-orbit coupling in the 2D limit.
△ Less
Submitted 20 May, 2021;
originally announced May 2021.
-
Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point
Authors:
Sambit Ghosh,
Taro Komori,
Ali Hallal,
Jose Peña Garcia,
Toshiki Gushi,
Taku Hirose,
Haruka Mitarai,
Hanako Okuno,
Jan Vogel,
Mairbek Chshiev,
Jean-Philippe Attané,
Laurent Vila,
Takashi Suemasu,
Stefania Pizzini
Abstract:
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride…
▽ More
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations.
△ Less
Submitted 11 March, 2021; v1 submitted 11 January, 2021;
originally announced January 2021.
-
Study of the $K_L \!\to\! π^0 ν\overlineν$ Decay at the J-PARC KOTO Experiment
Authors:
KOTO Collaboration,
J. K. Ahn,
B. Beckford,
M. Campbell,
S. H. Chen,
J. Comfort,
K. Dona,
M. S. Farrington,
K. Hanai,
N. Hara,
H. Haraguchi,
Y. B. Hsiung,
M. Hutcheson,
T. Inagaki,
M. Isoe,
I. Kamiji,
T. Kato,
E. J. Kim,
J. L. Kim,
H. M. Kim,
T. K. Komatsubara,
K. Kotera,
S. K. Lee,
J. W. Lee,
G. Y. Lim
, et al. (46 additional authors not shown)
Abstract:
The rare decay $K_L \!\to\! π^0 ν\overlineν$ was studied with the dataset taken at the J-PARC KOTO experiment in 2016, 2017, and 2018. With a single event sensitivity of $( 7.20 \pm 0.05_{\rm stat} \pm 0.66_{\rm syst} ) \times 10^{-10}$, three candidate events were observed in the signal region. After unveiling them, contaminations from $K^{\pm}$ and scattered $K_L$ decays were studied, and the to…
▽ More
The rare decay $K_L \!\to\! π^0 ν\overlineν$ was studied with the dataset taken at the J-PARC KOTO experiment in 2016, 2017, and 2018. With a single event sensitivity of $( 7.20 \pm 0.05_{\rm stat} \pm 0.66_{\rm syst} ) \times 10^{-10}$, three candidate events were observed in the signal region. After unveiling them, contaminations from $K^{\pm}$ and scattered $K_L$ decays were studied, and the total number of background events was estimated to be $1.22 \pm 0.26$. We conclude that the number of observed events is statistically consistent with the background expectation. For this dataset, we set an upper limit of $4.9 \times 10^{-9}$ on the branching fraction of $K_L \!\to\! π^0 ν\overlineν$ at the 90% confidence level.
△ Less
Submitted 24 March, 2021; v1 submitted 14 December, 2020;
originally announced December 2020.
-
First Search for the $K_L \to π^0 γ$ Decay
Authors:
J. K. Ahn,
B. Beckford,
M. Campbell,
S. H. Chen,
J. M. Choi,
J. Comfort,
K. Dona,
M. S. Farrington,
N. Hara,
H. Haraguchi,
Y. B. Hsiung,
M. Hutcheson,
T. Inagaki,
M. Isoe,
I. Kamiji,
E. J. Kim,
J. L. Kim,
H. M. Kim,
T. K. Komatsubara,
K. Kotera,
J. W. Lee,
G. Y. Lim,
C. Lin,
Q. S. Lin,
Y. Luo
, et al. (37 additional authors not shown)
Abstract:
We report the first search for the $K_L \to π^0 γ$ decay, which is forbidden by Lorentz invariance, using the data from 2016 to 2018 at the J-PARC KOTO experiment. With a single event sensitivity of $(7.1\pm 0.3_{\rm stat.} \pm 1.6_{\rm syst.})\times 10^{-8}$, no candidate event was observed in the signal region. The upper limit on the branching fraction was set to be $1.7\times 10^{-7}$ at the 90…
▽ More
We report the first search for the $K_L \to π^0 γ$ decay, which is forbidden by Lorentz invariance, using the data from 2016 to 2018 at the J-PARC KOTO experiment. With a single event sensitivity of $(7.1\pm 0.3_{\rm stat.} \pm 1.6_{\rm syst.})\times 10^{-8}$, no candidate event was observed in the signal region. The upper limit on the branching fraction was set to be $1.7\times 10^{-7}$ at the 90\% confidence level.
△ Less
Submitted 24 March, 2021; v1 submitted 26 June, 2020;
originally announced June 2020.
-
Growth, charge and thermal transport of flowered graphene
Authors:
Alessandro Cresti,
Jesús Carrete,
Hanako Okuno,
Tao Wang,
Georg K. H. Madsen,
Natalio Mingo,
Pascal Pochet
Abstract:
We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techniques, we deduce how flower defects are formed during recrystallization of chemical vapor deposited graphene. We propose that the flower defects arise from a bulge type mechanism in which the flower domains are the grains…
▽ More
We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techniques, we deduce how flower defects are formed during recrystallization of chemical vapor deposited graphene. We propose that the flower defects arise from a bulge type mechanism in which the flower domains are the grains left over by dynamic recrystallisation. Next, in order to evaluate the use of such defects as possible building blocks for all-graphene electronics, we combine multiscale modeling tools to investigate the structure and the electron and phonon transport properties of large monolayer graphene samples with a random distribution of flower defects. For large enough flower densities, we find that electron transport is strongly suppressed while, surprisingly, hole transport remains almost unaffected. These results suggest possible applications of flowered graphene for electron energy filtering. For the same defect densities, phonon transport is reduced by orders of magnitude as elastic scattering by defects becomes dominant. Heat transport by flexural phonons, key in graphene, is largely suppressed even for very low concentrations.
△ Less
Submitted 11 February, 2020;
originally announced February 2020.
-
Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe$_2$
Authors:
Pierre Mallet,
Florian Chiapello,
Hanako Okuno,
Hervé Boukari,
Matthieu Jamet,
Jean-Yves Veuillen
Abstract:
Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ d…
▽ More
Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V$_W$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V$_W$ dopants.
△ Less
Submitted 11 February, 2020;
originally announced February 2020.
-
New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe$_2$ monolayers
Authors:
Céline Vergnaud,
Minh-Tuan Dau,
Benjamin Grévin,
Christophe Licitra,
Alain Marty,
Hanako Okuno,
Matthieu Jamet
Abstract:
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature ($>$900$^{\circ}$C) and very low deposition rate (…
▽ More
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature ($>$900$^{\circ}$C) and very low deposition rate ($<$0.015 nm/min) are necessary to obtain high quality WSe$_2$ films. The domain size can be larger than 1 $μ$m and the in-plane rotational misorientation less than $\pm$0.5$^{\circ}$. The WSe$_2$ monolayer is also robust against air exposure, can be easily transferred over 1 cm$^2$ on SiN/SiO$_2$ and exhibits strong photoluminescence signal. Moreover, by combining grazing incidence x-ray diffraction and transmission electron microscopy, we could detect the presence of few misoriented grains. A two-dimensional model based on atomic coincidences between the WSe$_2$ and mica crystals allows us to explain the formation of these misoriented grains and gives suggestion to remove them and further improve the crystalline quality of WSe$_2$.
△ Less
Submitted 17 October, 2019;
originally announced October 2019.
-
The valley Nernst effect in WSe$_2$
Authors:
Minh-Tuan Dau,
Céline Vergnaud,
Alain Marty,
Cyrille Beigné,
Serge Gambarelli,
Vincent Maurel,
Timothée Journot,
Bérangère Hyot,
Thomas Guillet,
Benjamin Grévin,
Hanako Okuno,
Matthieu Jamet
Abstract:
The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of…
▽ More
The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe$_{2}$ mono-multi-layers and the ferromagnetic resonance-spin pumping technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe$_{2}$ that we detect electrically at room temperature. The valley Nernst coefficient is in very good agreement with the predicted value.
△ Less
Submitted 17 October, 2019;
originally announced October 2019.
-
Van der Waals epitaxy of Mn-doped MoSe$_2$ on mica
Authors:
M. T. Dau,
C. Vergnaud,
M. Gay,
C. J. Alvarez,
A. Marty,
C. Beigné,
D. Jalabert,
J. -F. Jacquot,
O. Renault,
H. Okuno,
M. Jamet
Abstract:
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bottom-up strategy using molecular beam epitaxy to grow and dope large-area (cm$^2$) few-layer MoSe$_2$ with Mn as a magnetic dopant. High-quality Mn-do…
▽ More
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bottom-up strategy using molecular beam epitaxy to grow and dope large-area (cm$^2$) few-layer MoSe$_2$ with Mn as a magnetic dopant. High-quality Mn-doped MoSe$_2$ layers are obtained for Mn content of less than 5 % (atomic). When increasing the Mn content above 5 % we observe a clear transition from layer-by-layer to cluster growth. Magnetic measurements involving a transfer process of the cm$^2$-large doped layers on 100-micron-thick silicon substrate, show plausible proof of high-temperature ferromagnetism of 1 % and 10 % Mn-doped MoSe$_2$. Although we could not point to a correlation between magnetic and electrical properties, we demonstrate that the transfer process described in this report permits to achieve conventional electrical and magnetic measurements on the doped layers transferred on any substrate. Therefore, this study provides a promising route to characterize stable ferromagnetic 2D layers, which is broadening the current start-of-the-art of 2D materials-based applications.
△ Less
Submitted 11 June, 2019;
originally announced June 2019.
-
Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Si
Authors:
C. Vergnaud,
M. Gay,
C. Alvarez,
M. -T. Dau,
F. Pierre,
D. Jalabert,
C. Licitra,
A. Marty,
C. Beigné,
B. Grévin,
O. Renault,
H. Okuno,
M. Jamet
Abstract:
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an impo…
▽ More
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe$_2$ mono- and multi-layers on SiO$_2$/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO$_2$/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe$_2$ monolayers over 1 cm$^2$. To grow MoSe$_2$ multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe$_2$ monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe$_2$ multilayers over 1 cm$^2$. Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in MoSe$_2$ bilayers.
△ Less
Submitted 7 June, 2019;
originally announced June 2019.
-
Mn4N ferrimagnetic thin films for sustainable spintronics
Authors:
T. Gushi,
M. Jovičević Klug,
J. Peña Garcia,
H. Okuno,
J. Vogel,
J. P. Attané,
T. Suemasu,
S. Pizzini,
L. Vila
Abstract:
Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxial…
▽ More
Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetisation, a very high extraordinary Hall angle (2%) and smooth domain walls, at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin polarised currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetisation and a large spin polarisation. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.
△ Less
Submitted 4 March, 2019; v1 submitted 21 January, 2019;
originally announced January 2019.
-
Search for $K_L \!\to\! π^0 ν\overlineν$ and $K_L \!\to\! π^0 X^0$ Decays at the J-PARC KOTO Experiment
Authors:
KOTO Collaboration,
J. K. Ahn,
B. Beckford,
J. Beechert,
K. Bryant,
M. Campbell,
S. H. Chen,
J. Comfort,
K. Dona,
N. Hara,
H. Haraguchi,
Y. B. Hsiung,
M. Hutcheson,
T. Inagaki,
I. Kamiji,
N. Kawasaki,
E. J. Kim,
J. L. Kim,
Y. J. Kim,
J. W. Ko,
T. K. Komatsubara,
K. Kotera,
A. S. Kurilin,
J. W. Lee,
G. Y. Lim
, et al. (45 additional authors not shown)
Abstract:
A search for the rare decay $K_L \!\to\! π^0 ν\overlineν$ was performed. With the data collected in 2015, corresponding to $2.2 \times 10^{19}$ protons on target, a single event sensitivity of $( 1.30 \pm 0.01_{\rm stat} \pm 0.14_{\rm syst} ) \times 10^{-9}$ was achieved and no candidate events were observed. We set an upper limit of $3.0 \times 10^{-9}$ for the branching fraction of…
▽ More
A search for the rare decay $K_L \!\to\! π^0 ν\overlineν$ was performed. With the data collected in 2015, corresponding to $2.2 \times 10^{19}$ protons on target, a single event sensitivity of $( 1.30 \pm 0.01_{\rm stat} \pm 0.14_{\rm syst} ) \times 10^{-9}$ was achieved and no candidate events were observed. We set an upper limit of $3.0 \times 10^{-9}$ for the branching fraction of $K_L \!\to\! π^0 ν\overlineν$ at the 90% confidence level (C.L.), which improved the previous limit by almost an order of magnitude. An upper limit for $K_L \!\to\! π^0 X^0$ was also set as $2.4 \times 10^{-9}$ at the 90% C.L., where $X^0$ is an invisible boson with a mass of $135~{\rm MeV}/c^2$.
△ Less
Submitted 26 February, 2019; v1 submitted 23 October, 2018;
originally announced October 2018.
-
Epitaxial electrical contact to graphene on SiC
Authors:
T. Le Quang,
L. Huder,
F. Lipp Bregolin,
A. Artaud,
H. Okuno,
S. Pouget,
N. Mollard,
G. Lapertot,
A. G. M Jansen,
F. Lefloch,
E. F. C Driessen,
C. Chapelier,
V. T. Renard
Abstract:
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a…
▽ More
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in high vacuum. We exploit the combined effect of edge-contact and partially-covalent surface epitaxy between graphene and the metallic carbide to fabricate devices in which low contact-resistance and Josephson effect are observed. Implementing this approach could significantly simplify the realization of large-scale graphene circuits.
△ Less
Submitted 11 July, 2017; v1 submitted 17 May, 2017;
originally announced May 2017.
-
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
Authors:
M. T. Dau,
C. Vergnaud,
A. Marty,
F. Rortais,
C. Beigné,
H. Boukari,
E. Bellet-Amalric,
V. Guigoz,
O. Renault,
C. Alvarez,
H. Okuno,
P. Pochet,
M. Jamet
Abstract:
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects a…
▽ More
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects and boundaries. Temperature and magnetic field dependent resistivity measurements unveil a carrier hopping character described within two-dimensional variable range hopping mechanism. Moreover, a negative magnetoresistance was observed, stressing a fascinating feature of the charge transport under the application of a magnetic field in the layered MoSe 2 system. This negative magnetoresistance observed at millimeter-scale is similar to that observed recently at room temperature inWS2 flakes at a micrometer scale [Zhang et al., Appl. Phys. Lett. 108, 153114 (2016)]. This scalability highlights the fact that the underlying physical mechanism is intrinsic to these two-dimensional materials and occurs at very short scale.
△ Less
Submitted 16 February, 2017;
originally announced February 2017.
-
A new search for the $K_{L} \to π^0 ν\overlineν$ and $K_{L} \to π^{0} X^{0}$ decays
Authors:
J. K. Ahn,
K. Y. Baek,
S. Banno,
B. Beckford,
B. Brubaker,
T. Cai,
M. Campbell,
C. Carruth,
S. H. Chen,
S. Chu,
J. Comfort,
Y. T. Duh,
T. Furukawa,
H. Haraguchi,
T. Hineno,
Y. B. Hsiung,
M. Hutcheson,
T. Inagaki,
M. Isoe,
E. Iwai,
T. Kamibayashi,
I. Kamiji,
N. Kawasaki,
E. J. Kim,
Y. J. Kim
, et al. (66 additional authors not shown)
Abstract:
We searched for the $CP$-violating rare decay of neutral kaon, $K_{L} \to π^0 ν\overlineν$, in data from the first 100 hours of physics running in 2013 of the J-PARC KOTO experiment. One candidate event was observed while $0.34\pm0.16$ background events were expected. We set an upper limit of $5.1\times10^{-8}$ for the branching fraction at the 90\% confidence level (C.L.). An upper limit of…
▽ More
We searched for the $CP$-violating rare decay of neutral kaon, $K_{L} \to π^0 ν\overlineν$, in data from the first 100 hours of physics running in 2013 of the J-PARC KOTO experiment. One candidate event was observed while $0.34\pm0.16$ background events were expected. We set an upper limit of $5.1\times10^{-8}$ for the branching fraction at the 90\% confidence level (C.L.). An upper limit of $3.7\times10^{-8}$ at the 90\% C.L. for the $K_{L} \to π^{0} X^{0}$decay was also set for the first time, where $X^{0}$ is an invisible particle with a mass of 135 MeV/$c^{2}$.
△ Less
Submitted 27 December, 2016; v1 submitted 12 September, 2016;
originally announced September 2016.
-
Robust Recognition of Simultaneous Speech By a Mobile Robot
Authors:
Jean-Marc Valin,
Shun'ichi Yamamoto,
Jean Rouat,
Francois Michaud,
Kazuhiro Nakadai,
Hiroshi G. Okuno
Abstract:
This paper describes a system that gives a mobile robot the ability to perform automatic speech recognition with simultaneous speakers. A microphone array is used along with a real-time implementation of Geometric Source Separation and a post-filter that gives a further reduction of interference from other sources. The post-filter is also used to estimate the reliability of spectral features and c…
▽ More
This paper describes a system that gives a mobile robot the ability to perform automatic speech recognition with simultaneous speakers. A microphone array is used along with a real-time implementation of Geometric Source Separation and a post-filter that gives a further reduction of interference from other sources. The post-filter is also used to estimate the reliability of spectral features and compute a missing feature mask. The mask is used in a missing feature theory-based speech recognition system to recognize the speech from simultaneous Japanese speakers in the context of a humanoid robot. Recognition rates are presented for three simultaneous speakers located at 2 meters from the robot. The system was evaluated on a 200 word vocabulary at different azimuths between sources, ranging from 10 to 90 degrees. Compared to the use of the microphone array source separation alone, we demonstrate an average reduction in relative recognition error rate of 24% with the post-filter and of 42% when the missing features approach is combined with the post-filter. We demonstrate the effectiveness of our multi-source microphone array post-filter and the improvement it provides when used in conjunction with the missing features theory.
△ Less
Submitted 20 February, 2016;
originally announced February 2016.
-
IsoDAR@KamLAND: A Conceptual Design Report for the Technical Facility
Authors:
M. Abs,
A. Adelmann,
J. R Alonso,
S. Axani,
W. A. Barletta,
R. Barlow,
L. Bartoszek,
A. Bungau,
L. Calabretta,
A. Calanna,
D. Campo,
G. Castro,
L. Celona,
G. H. Collin,
J. M. Conrad,
S. Gammino,
R. Johnson,
G. Karagiorgi,
S. Kayser,
W. Kleeven,
A. Kolano,
F. Labrecque,
W. A. Loinaz,
J. Minervini,
M. H. Moulai
, et al. (15 additional authors not shown)
Abstract:
This conceptual design report describes the technical facility for the IsoDAR electron-antineutrino source at KamLAND. The IsoDAR source will allow an impressive program of neutrino oscillation and electroweak physics to be performed at KamLAND. This report provides information on the physics case, the conceptual design for the subsystems, alternative designs considered, specifics of installation…
▽ More
This conceptual design report describes the technical facility for the IsoDAR electron-antineutrino source at KamLAND. The IsoDAR source will allow an impressive program of neutrino oscillation and electroweak physics to be performed at KamLAND. This report provides information on the physics case, the conceptual design for the subsystems, alternative designs considered, specifics of installation at KamLAND, and identified needs for future development. We discuss the risks we have identified and our approach to mitigating those risks with this design. A substantial portion of the conceptual design is based on three years of experimental efforts and on industry experience. This report also includes information on the conventional facilities.
△ Less
Submitted 16 November, 2015;
originally announced November 2015.
-
Long-lived neutral-kaon flux measurement for the KOTO experiment
Authors:
T. Masuda,
J. K. Ahn,
S. Banno,
M. Campbell,
J. Comfort,
Y. T. Duh,
T. Hineno,
Y. B. Hsiung,
T. Inagaki,
E. Iwai,
N. Kawasaki,
E. J. Kim,
Y. J. Kim,
J. W. Ko,
T. K. Komatsubara,
A. S. Kurilin,
G. H. Lee,
J. W. Lee,
S. K. Lee,
G. Y. Lim,
J. Ma,
D. MacFarland,
Y. Maeda,
T. Matsumura,
R. Murayama
, et al. (32 additional authors not shown)
Abstract:
The KOTO ($K^0$ at Tokai) experiment aims to observe the CP-violating rare decay $K_L \rightarrow π^0 ν\barν$ by using a long-lived neutral-kaon beam produced by the 30 GeV proton beam at the Japan Proton Accelerator Research Complex. The $K_L$ flux is an essential parameter for the measurement of the branching fraction. Three $K_L$ neutral decay modes, $K_L \rightarrow 3π^0$,…
▽ More
The KOTO ($K^0$ at Tokai) experiment aims to observe the CP-violating rare decay $K_L \rightarrow π^0 ν\barν$ by using a long-lived neutral-kaon beam produced by the 30 GeV proton beam at the Japan Proton Accelerator Research Complex. The $K_L$ flux is an essential parameter for the measurement of the branching fraction. Three $K_L$ neutral decay modes, $K_L \rightarrow 3π^0$, $K_L \rightarrow 2π^0$, and $K_L \rightarrow 2γ$ were used to measure the $K_L$ flux in the beam line in the 2013 KOTO engineering run. A Monte Carlo simulation was used to estimate the detector acceptance for these decays. Agreement was found between the simulation model and the experimental data, and the remaining systematic uncertainty was estimated at the 1.4\% level. The $K_L$ flux was measured as $(4.183 \pm 0.017_{\mathrm{stat.}} \pm 0.059_{\mathrm{sys.}}) \times 10^7$ $K_L$ per $2\times 10^{14}$ protons on a 66-mm-long Au target.
△ Less
Submitted 7 January, 2016; v1 submitted 11 September, 2015;
originally announced September 2015.
-
Whitepaper on the DAEdALUS Program
Authors:
C. Aberle,
A. Adelmann,
J. Alonso,
W. A. Barletta,
R. Barlow,
L. Bartoszek,
A. Bungau,
A. Calanna,
D. Campo,
L. Calabretta,
L. Celona,
G. Collin,
J. M. Conrad,
A. de Gouvea,
Z. Djurcic,
S. Gammino,
D. Garisto,
R. Gutierrez,
R. R. Johnson,
Y. Kamyshkov,
G. Karagiorgi,
A. Kolano,
F. Labrecque,
W. Loinaz,
H. Okuno
, et al. (12 additional authors not shown)
Abstract:
This whitepaper describes the status of the DAEdALUS program for development of high power cyclotrons as of the time of the final meeting of the Division of Particles and Fields 2013 Community Study ("Snowmass"). We report several new results, including a measurement capability between 4 and 12 degrees on the CP violating parameter in the neutrino sector. Past results, including the capability of…
▽ More
This whitepaper describes the status of the DAEdALUS program for development of high power cyclotrons as of the time of the final meeting of the Division of Particles and Fields 2013 Community Study ("Snowmass"). We report several new results, including a measurement capability between 4 and 12 degrees on the CP violating parameter in the neutrino sector. Past results, including the capability of the IsoDAR high Dm^2 antielectron neutrino disappearance search, are reviewed. A discussion of the R&D successes, including construction of a beamline teststand, and future plans are provided. This text incorporates short whitepapers written for subgroups in the Intensity Frontier and Frontier Capabilities Working Groups that are available on the Snowmass website.
△ Less
Submitted 10 July, 2013;
originally announced July 2013.
-
Multimegawatt DAE$δ$ALUS Cyclotrons for Neutrino Physics
Authors:
M. Abs,
A. Adelmann,
J. R. Alonso,
W. A. Barletta,
R. Barlow,
L. Calabretta,
A. Calanna,
D. Campo,
L. Celona,
J. M. Conrad,
S. Gammino,
W. Kleeven,
T. Koeth,
M. Maggiore,
H. Okuno,
L. A. C. Piazza,
M. Seidel,
M. H. Shaevitz,
L. Stingelin,
J. J. Yang,
J. Yeck
Abstract:
DAE$δ$ALUS (Decay-At-rest Experiment for $δ_{CP}$ studies At the Laboratory for Underground Science) provides a new approach to the search for CP violation in the neutrino sector. High-power continuous-wave proton cyclotrons efficiently provide the necessary proton beams with an energy of up to 800 MeV to create neutrinos from pion and muon decay-at-rest. The experiment searches for…
▽ More
DAE$δ$ALUS (Decay-At-rest Experiment for $δ_{CP}$ studies At the Laboratory for Underground Science) provides a new approach to the search for CP violation in the neutrino sector. High-power continuous-wave proton cyclotrons efficiently provide the necessary proton beams with an energy of up to 800 MeV to create neutrinos from pion and muon decay-at-rest. The experiment searches for $\barν_μ \rightarrow \barν_e$ at short baselines corresponding to the atmospheric $Δm^2$ region. The $\barν_e$ will be detected via inverse beta decay. Thus, the cyclotrons will be employed at a future ultra-large gadolinium-doped water or scintillator detector. In this paper we address the most challenging questions regarding a cyclotron-based high-power proton driver in the megawatt range with a kinetic energy of 800 MeV. Aspects of important subsystems like the ion source and injection chain, the magnet design and radio frequency system will be addressed. Precise beam dynamics simulations, including space charge and the $\text{H}_2^+$ stripping process, are the base for the characterization and quantification of the beam halo -- one of the most limiting processes in high-power particle accelerators.
△ Less
Submitted 1 August, 2012; v1 submitted 20 July, 2012;
originally announced July 2012.
-
Study of the K0(L) --> pi0 pi0 nu nu-bar decay
Authors:
E391a Collaboration,
R. Ogata,
S. Suzuki,
J. K. Ahn,
Y. Akune,
V. Baranov,
K. F. Chen,
J. Comfort,
M. Doroshenko,
Y. Fujioka,
Y. B. Hsiung,
T. Inagaki,
S. Ishibashi,
N. Ishihara,
H. Ishii,
E. Iwai,
T. Iwata,
I. Kato,
S. Kobayashi,
S. Komatsu,
T. K. Komatsubara,
A. S. Kurilin,
E. Kuzmin,
A. Lednev,
H. S. Lee
, et al. (45 additional authors not shown)
Abstract:
The rare decay K0(L) --> pi0 pi0 nu nu-bar was studied with the E391a detector at the KEK 12-GeV proton synchrotron. Based on 9.4 x 10^9 K0L decays, an upper limit of 8.1 x 10^{-7} was obtained for the branching fraction at 90% confidence level. We also set a limit on the K0(L) --> pi0 pi0 X (X --> invisible particles) process; the limit on the branching fraction varied from 7.0 x 10^{-7} to 4.0 x…
▽ More
The rare decay K0(L) --> pi0 pi0 nu nu-bar was studied with the E391a detector at the KEK 12-GeV proton synchrotron. Based on 9.4 x 10^9 K0L decays, an upper limit of 8.1 x 10^{-7} was obtained for the branching fraction at 90% confidence level. We also set a limit on the K0(L) --> pi0 pi0 X (X --> invisible particles) process; the limit on the branching fraction varied from 7.0 x 10^{-7} to 4.0 x 10^{-5} for the mass of X ranging from 50 MeV/c^2 to 200 MeV/c^2.
△ Less
Submitted 9 September, 2011; v1 submitted 17 June, 2011;
originally announced June 2011.
-
Search for the decay $K_L^0 \rightarrow 3γ$
Authors:
Y. C. Tung,
Y. B. Hsiung,
J. K. Ahn,
Y. Akune,
V. Baranov,
K. F. Chen,
J. Comfort,
M. Doroshenko,
Y. Fujioka,
T. Inagaki,
S. Ishibashi,
N. Ishihara,
H. Ishii,
E. Iwai,
T. Iwata,
I. Kato,
S. Kobayashi,
S. Komatsu,
T. K. Komatsubara,
A. S. Kurilin,
E. Kuzmin,
A. Lednev,
H. S. Lee,
S. Y. Lee,
G. Y. Lim
, et al. (44 additional authors not shown)
Abstract:
We performed a search for the decay $K_L^0 \rightarrow 3γ$ with the E391a detector at KEK. In the data accumulated in 2005, no event was observed in the signal region. Based on the assumption of $K_L^0 \rightarrow 3γ$ proceeding via parity-violation, we obtained the single event sensitivity to be $(3.23\pm0.14)\times10^{-8}$, and set an upper limit on the branching ratio to be $7.4\times10^{-8}$ a…
▽ More
We performed a search for the decay $K_L^0 \rightarrow 3γ$ with the E391a detector at KEK. In the data accumulated in 2005, no event was observed in the signal region. Based on the assumption of $K_L^0 \rightarrow 3γ$ proceeding via parity-violation, we obtained the single event sensitivity to be $(3.23\pm0.14)\times10^{-8}$, and set an upper limit on the branching ratio to be $7.4\times10^{-8}$ at the 90% confidence level. This is a factor of 3.2 improvement compared to the previous results. The results of $K_L^0 \rightarrow 3γ$ proceeding via parity-conservation were also presented in this paper.
△ Less
Submitted 22 November, 2010; v1 submitted 19 November, 2010;
originally announced November 2010.
-
Search for a light pseudoscalar particle in the decay $K^0_L \to π^0 π^0 X$
Authors:
Y. C. Tung,
Y. B. Hsiung,
M. L. Wu,
K. F. Chen,
J. K. Ahn,
Y. Akune,
V. Baranov,
J. Comfort,
M. Doroshenko,
Y. Fujioka,
T. Inagaki,
S. Ishibashi,
N. Ishihara,
H. Ishii,
E. Iwai,
T. Iwata,
I. Kato,
S. Kobayashi,
T. K. Komatsubara,
A. S. Kurilin,
E. Kuzmin,
A. Lednev,
H. S. Lee,
S. Y. Lee,
G. Y. Lim
, et al. (37 additional authors not shown)
Abstract:
We performed a search for a light pseudoscalar particle $X$ in the decay $K_L^0->pi0pi0X$, $X->γγ$ with the E391a detector at KEK. Such a particle with a mass of 214.3 MeV/$c^2$ was suggested by the HyperCP experiment. We found no evidence for $X$ and set an upper limit on the product branching ratio for $K_L^0->pi0pi0X$, $X->γγ$ of $2.4 \times 10^{-7}$ at the 90% confidence level. Upper limits…
▽ More
We performed a search for a light pseudoscalar particle $X$ in the decay $K_L^0->pi0pi0X$, $X->γγ$ with the E391a detector at KEK. Such a particle with a mass of 214.3 MeV/$c^2$ was suggested by the HyperCP experiment. We found no evidence for $X$ and set an upper limit on the product branching ratio for $K_L^0->pi0pi0X$, $X->γγ$ of $2.4 \times 10^{-7}$ at the 90% confidence level. Upper limits on the branching ratios in the mass region of $X$ from 194.3 to 219.3 MeV/$c^2$ are also presented.
△ Less
Submitted 5 February, 2009; v1 submitted 23 October, 2008;
originally announced October 2008.
-
Projectile fragmentation reactions and production of nuclei near the neutron drip-line
Authors:
M. Notani,
H. Sakurai,
N. Aoi,
H. Iwasaki,
N. Fukuda,
Z. Liu,
K. Yoneda,
H. Ogawa,
T. Teranishi,
T. Nakamura,
H. Okuno,
A. Yoshida,
Y. Watanabe,
S. Momota,
N. Inabe,
T. Kubo,
S. Ito,
A. Ozawa,
T. Suzuki,
I. Tanihata,
M. Ishihara
Abstract:
The reaction mechanism of projectile fragmentation at intermediate energies has been investigated observing the target dependence of the production cross sections of very neutron-rich nuclei. Measurement of longitudinal momentum distributions of projectile-like fragments within a wide range of fragment mass and its charge was performed using a hundred-MeV/n $^{40}$Ar beam incident on Be and Ta t…
▽ More
The reaction mechanism of projectile fragmentation at intermediate energies has been investigated observing the target dependence of the production cross sections of very neutron-rich nuclei. Measurement of longitudinal momentum distributions of projectile-like fragments within a wide range of fragment mass and its charge was performed using a hundred-MeV/n $^{40}$Ar beam incident on Be and Ta targets. By measurement of fragment momentum distribution, a parabolic mass dependence of momentum peak shift was observed in the results of both targets, and a phenomenon of light-fragment acceleration was found only in the Be-target data. The analysis of production cross sections revealed an obvious enhancement of the target dependence except target size effect when the neutron excess is increased. This result implies the breakdown of factorization (BOF) of production cross sections for very neutron-rich nuclei near the drip line.
△ Less
Submitted 23 February, 2007;
originally announced February 2007.
-
Lorentz Angle Measurement for CO2/Isobutane Gas Mixtures
Authors:
K. Hoshina,
K. Fujii,
N. Khalatyan,
O. Nitoh,
H. Okuno,
Y. Kato,
M. Kobayashi,
Y. Kurihara,
H. Kuroiwa,
Y. Nakamura,
K. Sakieda,
Y. Suzuki,
T. Watanabe
Abstract:
We have developed a Lorentz angle measurement system for cool gas mixtures in the course of our R&D for a proposed JLC central drift chamber (JLC-CDC). The measurement system is characterized by the use of two laser beams to produce primary electrons and flash ADCs to read their signals simultaneously. With this new system, we have measured Lorentz angles for CO2/isobutane gas mixtures with diff…
▽ More
We have developed a Lorentz angle measurement system for cool gas mixtures in the course of our R&D for a proposed JLC central drift chamber (JLC-CDC). The measurement system is characterized by the use of two laser beams to produce primary electrons and flash ADCs to read their signals simultaneously. With this new system, we have measured Lorentz angles for CO2/isobutane gas mixtures with different proportions (95:5, 90:10, and 85:15), varying drift field from 0.6 to 2.0 kV/cm and magnetic field up to 1.5 T. The results of the measurement are in good agreement with GARFIELD/MAGBOLTZ simulations.
△ Less
Submitted 1 December, 2000;
originally announced December 2000.
-
Time-of-Propagation Cherenkov counter for particle identification
Authors:
M. Akatsu,
M. Aoki,
K. Fujimoto,
Y. Higashino,
M. Hirose,
K. Inami,
A. Ishikawa,
T. Matsumoto,
K. Misono,
I. Nagai,
T. Ohshima,
A. Sugi,
A. Sugiyama,
S. Suzuki,
M. Tomoto,
H. Okuno
Abstract:
We describe here a new concept of a Cherenkov detector for particle identification by means of measuring the Time-of-Propagation (TOP) of Cherenkov photons.
We describe here a new concept of a Cherenkov detector for particle identification by means of measuring the Time-of-Propagation (TOP) of Cherenkov photons.
△ Less
Submitted 6 April, 1999;
originally announced April 1999.
