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Shaping graphene superconductivity with nanometer precision
Authors:
E. Cortés-del Río,
S. Trivini,
J. I. Pascual,
V. Cherkez,
P. Mallet,
J-Y. Veuillen,
J. C. Cuevas,
I. Brihuega
Abstract:
Graphene holds great potential for superconductivity due to its pure two-dimensional nature, the ability to tune its carrier density through electrostatic gating, and its unique, relativistic-like electronic properties. At present, we are still far from controlling and understanding graphene superconductivity, mainly because the selective introduction of superconducting properties to graphene is e…
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Graphene holds great potential for superconductivity due to its pure two-dimensional nature, the ability to tune its carrier density through electrostatic gating, and its unique, relativistic-like electronic properties. At present, we are still far from controlling and understanding graphene superconductivity, mainly because the selective introduction of superconducting properties to graphene is experimentally very challenging. Here, we have developed a method that enables shaping at will graphene superconductivity through a precise control of graphene-superconductor junctions. The method combines the proximity effect with scanning tunnelling microscope (STM) manipulation capabilities. We first grow Pb nano-islands that locally induce superconductivity in graphene. Using a STM, Pb nano-islands can be selectively displaced, over different types of graphene surfaces, with nanometre scale precision, in any direction, over distances of hundreds of nanometres. This opens an exciting playground where a large number of predefined graphene-superconductor hybrid structures can be investigated with atomic scale precision. To illustrate the potential, we perform a series of experiments, rationalized by the quasi-classical theory of superconductivity, going from the fundamental understanding of superconductor-graphene-superconductor heterostructures to the construction of superconductor nanocorrals, further used as "portable" experimental probes of local magnetic moments in graphene.
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Submitted 17 January, 2024;
originally announced January 2024.
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Angular dependence of the interlayer coupling at the interface between two dimensional materials 1T-PtSe$_2$ and graphene
Authors:
P. Mallet,
F. Ibrahim,
K. Abdukayumov,
A. Marty,
C. Vergnaud,
F. Bonell,
M. Chshiev,
M. Jamet,
J-Y. Veuillen
Abstract:
We present a study by Scanning Tunneling Microscopy, supported by ab initio calculations, of the interaction between graphene and monolayer (semiconducting) PtSe$_2$ as a function of the twist angle $θ$ between the two layers. We analyze the PtSe$_2$ contribution to the hybrid interface states that develop within the bandgap of the semiconductor to probe the interaction. The experimental data indi…
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We present a study by Scanning Tunneling Microscopy, supported by ab initio calculations, of the interaction between graphene and monolayer (semiconducting) PtSe$_2$ as a function of the twist angle $θ$ between the two layers. We analyze the PtSe$_2$ contribution to the hybrid interface states that develop within the bandgap of the semiconductor to probe the interaction. The experimental data indicate that the interlayer coupling increases markedly with the value of $θ$, which is confirmed by ab initio calculations. The moiré patterns observed within the gap are consistent with a momentum conservation rule between hybridized states, and the strength of the hybridization can be qualitatively described by a perturbative model.
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Submitted 21 December, 2023; v1 submitted 14 November, 2023;
originally announced November 2023.
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Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
Authors:
K. Abdukayumov,
M. Mičica,
F. Ibrahim,
C. Vergnaud,
A. Marty,
J. -Y. Veuillen,
P. Mallet,
I. Gomes de Moraes,
D. Dosenovic,
A. Wright,
J. Tignon,
J. Mangeney,
A. Ouerghi,
V. Renard,
F. Mesple,
F. Bonell,
H. Okuno,
M. Chshiev,
J. -M. George,
H. Jaffrès,
S. Dhillon,
M. Jamet
Abstract:
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t…
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Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission.
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Submitted 11 May, 2023;
originally announced May 2023.
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Alloying 2D VSe2 with Pt: from a charge density wave state to a disordered insulator
Authors:
E. Velez-Fort,
P. Mallet,
H. Boukari,
A. Marty,
C. Vergnaud,
F. Bonell,
M. Jamet,
J-Y. Veuillen
Abstract:
We have analyzed by means of scanning tunneling microscopy and spectroscopy the atomic and electronic structure of monolayers of 1T-VxPt1-xSe2 alloys grown by molecular beam epitaxy on epitaxial graphene substrates. We have focused on the composition range (0.1<x<0.35) where ferromagnetic behaviour has recently been demonstrated. For low Pt concentration, (x=0.07 and x=0.21), small domains (a few…
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We have analyzed by means of scanning tunneling microscopy and spectroscopy the atomic and electronic structure of monolayers of 1T-VxPt1-xSe2 alloys grown by molecular beam epitaxy on epitaxial graphene substrates. We have focused on the composition range (0.1<x<0.35) where ferromagnetic behaviour has recently been demonstrated. For low Pt concentration, (x=0.07 and x=0.21), small domains (a few nanometres in diameter) exhibiting the characteristic superstructure of the charge density wave (CDW) state of pristine VSe2 monolayer remain visible on most of the sample surface. Thus alloying preserves the short range order of the CDW phase, although it destroys its long range order. For higher Pt concentration (x=0.35) a disordered alloy forms. It presents a fully developped gap (a few tens meV in width) at the Fermi level and is thus a disordered insulator. This gap exhibits strong variations at the nanometer scale, reflecting the local fluctuations in the composition. An unexpectedly large interaction of the TMD layer with the graphene substrate sets in for this composition range.
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Submitted 11 July, 2022;
originally announced July 2022.
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Coexistence of ferromagnetism and spin-orbit coupling by incorporation of platinum in two-dimensional VSe$_2$
Authors:
E. Vélez-Fort,
A. Hallal,
R. Sant,
T. Guillet,
K. Abdukayumov,
A. Marty,
C. Vergnaud,
J. -F. Jacquot,
D. Jalabert,
J. Fujii,
I. Vobornik,
J. Rault,
N. B. Brookes,
D. Longo,
P. Ohresser,
A. Ouerghi,
J. -Y. Veuillen,
P. Mallet,
H. Boukari,
H. Okuno,
M. Chshiev,
F. Bonell,
M. Jamet
Abstract:
We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homo…
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We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homogeneous 2D alloy restores ferromagnetic order with Curie temperatures of 6 K for 5 monolayers and 25 K for one monolayer of V$_{0.65}$Pt$_{0.35}$Se$_2$. Moreover, the presence of platinum atoms gives rise to Rashba spin-orbit coupling in (V,Pt)Se$_2$ providing an original platform to study the interplay between ferromagnetism and spin-orbit coupling in the 2D limit.
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Submitted 20 May, 2021;
originally announced May 2021.
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Observation of Yu-Shiba-Rusinov states in superconducting graphene
Authors:
E. Cortés-del Río,
J. L. Lado,
V. Cherkez,
P. Mallet,
J-Y. Veuillen,
J. C. Cuevas,
J. M. Gómez-Rodríguez,
J. Fernández-Rossier,
I. Brihuega
Abstract:
When magnetic atoms are inserted inside a superconductor, the superconducting order is locally depleted as a result of the antagonistic nature of magnetism and superconductivity1. Thereby, distinctive spectral features, known as Yu-Shiba-Rusinov states, appear inside the superconducting gap2-4. The search for Yu-Shiba-Rusinov states in different materials is intense, as they can be used as buildin…
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When magnetic atoms are inserted inside a superconductor, the superconducting order is locally depleted as a result of the antagonistic nature of magnetism and superconductivity1. Thereby, distinctive spectral features, known as Yu-Shiba-Rusinov states, appear inside the superconducting gap2-4. The search for Yu-Shiba-Rusinov states in different materials is intense, as they can be used as building blocks to promote Majorana modes5 suitable for topological quantum computing6. Here we report the first realization of Yu-Shiba-Rusinov states in graphene, a non-superconducting 2D material, and without the participation of magnetic atoms. We induce superconductivity in graphene by proximity effect7-9 brought by adsorbing nanometer scale superconducting Pb islands. Using scanning tunneling microscopy and spectroscopy we measure the superconducting proximity gap in graphene and we visualize Yu-Shiba-Rusinov states in graphene grain boundaries. Our results reveal the very special nature of those Yu-Shiba-Rusinov states, which extends more than 20 nm away from the grain boundaries. These observations provide the long sought experimental confirmation that graphene grain boundaries host local magnetic moments10-14 and constitute the first observation of Yu-Shiba-Rusinov states in a chemically pure system.
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Submitted 20 October, 2020;
originally announced October 2020.
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Atomic-scale control of graphene magnetism using hydrogen atoms
Authors:
H. González-Herrero,
J. M. Gómez-Rodríguez,
P. Mallet,
M. Moaied,
J. J. Palacios,
C. Salgado,
M. M. Ugeda,
J. Y. Veuillen,
F. Yndurain,
I. Brihuega
Abstract:
Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments. Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a ~20 meV spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is ess…
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Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments. Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a ~20 meV spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is essentially localized on the carbon sublattice complementary to the one where the H atom is chemisorbed. This atomically modulated spin-texture, which extends several nanometers away from the H atom, drives the direct coupling between the magnetic moments at unusually long distances. Using the STM tip to manipulate H atoms with atomic precision, we demonstrate the possibility to tailor the magnetism of selected graphene regions.
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Submitted 28 September, 2020;
originally announced September 2020.
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Quantum confinement of Dirac quasiparticles in graphene patterned with subnanometer precision
Authors:
E. Cortés-del Río,
P. Mallet,
H. González-Herrero,
J. L. Lado,
J. Fernández-Rossier,
J. M. Gómez-Rodríguez,
J-Y. Veuillen,
I. Brihuega
Abstract:
Quantum confinement of graphene Dirac-like electrons in artificially crafted nanometer structures is a long sought goal that would provide a strategy to selectively tune the electronic properties of graphene, including bandgap opening or quantization of energy levels However, creating confining structures with nanometer precision in shape, size and location, remains as an experimental challenge, b…
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Quantum confinement of graphene Dirac-like electrons in artificially crafted nanometer structures is a long sought goal that would provide a strategy to selectively tune the electronic properties of graphene, including bandgap opening or quantization of energy levels However, creating confining structures with nanometer precision in shape, size and location, remains as an experimental challenge, both for top-down and bottom-up approaches. Moreover, Klein tunneling, offering an escape route to graphene electrons, limits the efficiency of electrostatic confinement. Here, a scanning tunneling microscope (STM) is used to create graphene nanopatterns, with sub-nanometer precision, by the collective manipulation of a large number of H atoms. Individual graphene nanostructures are built at selected locations, with predetermined orientations and shapes, and with dimensions going all the way from 2 nanometers up to 1 micron. The method permits to erase and rebuild the patterns at will, and it can be implemented on different graphene substrates. STM experiments demonstrate that such graphene nanostructures confine very efficiently graphene Dirac quasiparticles, both in zero and one dimensional structures. In graphene quantum dots, perfectly defined energy band gaps up to 0.8 eV are found, that scale as the inverse of the dots linear dimension, as expected for massless Dirac fermions
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Submitted 31 May, 2020; v1 submitted 25 May, 2020;
originally announced May 2020.
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Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe$_2$
Authors:
Pierre Mallet,
Florian Chiapello,
Hanako Okuno,
Hervé Boukari,
Matthieu Jamet,
Jean-Yves Veuillen
Abstract:
Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ d…
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Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V$_W$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V$_W$ dopants.
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Submitted 11 February, 2020;
originally announced February 2020.
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Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
Authors:
Sudipta Dubey,
Simone Lisi,
Goutham Nayak,
Felix Herziger,
Van-Dung Nguyen,
Toai Le Quang,
Vladimir Cherkez,
César González,
Yannick J. Dappe,
Kenji Watanabe,
Takashi Taniguchi,
Laurence Magaud,
Pierre Mallet,
Jean-Yves Veuillen,
Raul Arenal,
Laëtitia Marty,
Julien Renard,
Nedjma Bendiab,
Johann Coraux,
Vincent Bouchiat
Abstract:
Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using diffe…
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Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using different sources of MoS2 -- a natural one and one prepared at high pressure and high temperature -- and different substrates bringing varying amounts of charged impurities and by separating the contributions of internal strain and doping in Raman spectra. Photoluminescence unveils various optically active excitonic complexes. We discover a defect-bound state having a low binding energy of 20 meV that does not appear sensitive to strain and doping, unlike charged excitons. Conversely, the defect does not significantly dope or strain MoS2. Scanning tunneling microscopy and density functional theory simulations point to substitutional atoms, presumably individual nitrogen atoms at the sulfur site. Our work shows the way to a systematic understanding of the effect of external and internal fields on the optical properties of two-dimensional materials.
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Submitted 7 May, 2018;
originally announced May 2018.
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Single 3$d$ transition metal atoms on multi-layer graphene systems: electronic configurations, bonding mechanisms and role of the substrate
Authors:
V. Sessi,
S. Stepanow,
A. N. Rudenko,
S. Krotzky,
K. Kern,
F. Hiebel,
P. Mallet,
J. -Y. Veuillen,
O. Sipr,
J. Honolka,
N. B. Brookes
Abstract:
The electronic configurations of Fe, Co, Ni, and Cu adatoms on graphene and graphite have been studied by x-ray magnetic circular dichroism and charge transfer multiplet theory. A delicate interplay between long-range interactions and local chemical bonding is found to influence the adatom equilibrium distance and magnetic moment. The results for Fe and Co are consistent with purely physisorbed sp…
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The electronic configurations of Fe, Co, Ni, and Cu adatoms on graphene and graphite have been studied by x-ray magnetic circular dichroism and charge transfer multiplet theory. A delicate interplay between long-range interactions and local chemical bonding is found to influence the adatom equilibrium distance and magnetic moment. The results for Fe and Co are consistent with purely physisorbed species having, however, different 3$d$-shell occupancies on graphene and graphite ($d^{n+1}$ and $d^n$, respectively). On the other hand, for the late 3$d$ metals Ni and Cu a trend towards chemisorption is found, which strongly quenches the magnetic moment on both substrates.
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Submitted 30 April, 2014;
originally announced April 2014.
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Impact of local stacking on the graphene-impurity interaction: theory and experiments
Authors:
F. Hiebel,
P. Mallet,
J. -Y. Veuillen,
L. Magaud
Abstract:
We investigate the graphene-impurity interaction problem by combining experimental - scanning tunneling microscopy (STM) and spectroscopy (STS) - and theoretical - Anderson impurity model and density functional theory (DFT) calculations - techniques. We use graphene on the SiC(000-1)(2x2)_C reconstruction as a model system. The SiC substrate reconstruction is based on silicon adatoms. Graphene mai…
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We investigate the graphene-impurity interaction problem by combining experimental - scanning tunneling microscopy (STM) and spectroscopy (STS) - and theoretical - Anderson impurity model and density functional theory (DFT) calculations - techniques. We use graphene on the SiC(000-1)(2x2)_C reconstruction as a model system. The SiC substrate reconstruction is based on silicon adatoms. Graphene mainly interacts with the dangling bonds of these adatoms which act as impurities. Graphene grown on SiC(000-1)(2x2)_C shows domains with various orientations relative to the substrate so that very different local graphene/Si adatom stacking configurations can be probed on a given grain. The position and width of the adatom (impurity) state can be analyzed by STM/STS and related to its local environment owing to the high bias electronic transparency of graphene. The experimental results are compared to Anderson's model predictions and complemented by DFT calculations for some specific local environments. We conclude that the adatom resonance shows a smaller width and a larger shift toward the Dirac point for an adatom at the center of a graphene hexagon than for an adatom just on top of a C graphene atom.
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Submitted 9 November, 2012; v1 submitted 8 November, 2012;
originally announced November 2012.
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Unravelling the intrinsic and robust nature of van Hove singularities in twisted bilayer graphene
Authors:
I. Brihuega,
P. Mallet,
H. González-Herrero,
G. Trambly de Laissardière,
M. M. Ugeda,
L. Magaud,
J. M. Gómez-Rodríguez,
F. Ynduráin,
J. -Y. Veuillen
Abstract:
Extensive scanning tunnelling microscopy and spectroscopy experiments complemented by first principles and parameterized tight binding calculations provide a clear answer to the existence, origin and robustness of van Hove singularities (vHs) in twisted graphene layers. Our results are conclusive: vHs due to interlayer coupling are ubiquitously present in a broad range (from 1° to 10°) of rotation…
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Extensive scanning tunnelling microscopy and spectroscopy experiments complemented by first principles and parameterized tight binding calculations provide a clear answer to the existence, origin and robustness of van Hove singularities (vHs) in twisted graphene layers. Our results are conclusive: vHs due to interlayer coupling are ubiquitously present in a broad range (from 1° to 10°) of rotation angles in our graphene on 6H-SiC(000-1) samples. From the variation of the energy separation of the vHs with rotation angle we are able to recover the Fermi velocity of a graphene monolayer as well as the strength of the interlayer interaction. The robustness of the vHs is assessed both by experiments, which show that they survive in the presence of a third graphene layer, and calculations, which test the role of the periodic modulation and absolute value of the interlayer distance. Finally, we clarify the origin of the related moiré corrugation detected in the STM images.
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Submitted 5 September, 2012;
originally announced September 2012.
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Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy
Authors:
P. Mallet,
I. Brihuega,
S. Bose,
M. M. Ugeda,
J. M. Gómez-Rodríguez,
K. Kern,
J. Y. Veuillen
Abstract:
Pseudospin, an additional degree of freedom related to the honeycomb structure of graphene, is responsible of many of the outstanding electronic properties found in this material. This article provides a clear understanding of how such pseudospin impacts the quasiparticle interferences of monolayer (ML) and bilayer (BL) graphene measured by low temperature scanning tunneling microscopy and spectro…
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Pseudospin, an additional degree of freedom related to the honeycomb structure of graphene, is responsible of many of the outstanding electronic properties found in this material. This article provides a clear understanding of how such pseudospin impacts the quasiparticle interferences of monolayer (ML) and bilayer (BL) graphene measured by low temperature scanning tunneling microscopy and spectroscopy. We have used this technique to map, with very high energy and space resolution, the spatial modulations of the local density of states of ML and BL graphene epitaxialy grown on SiC(0001), in presence of native disorder. We perform a Fourier transform analysis of such modulations including wavevectors up to unit-vectors of the reciprocal lattice. Our data demonstrate that the quasiparticle interferences associated to some particular scattering processes are suppressed in ML graphene, but not in BL graphene. Most importantly, interferences with 2qF wavevector associated to intravalley backscattering are not measured in ML graphene, even on the images with highest resolution. In order to clarify the role of the pseudospin on the quasiparticle interferences, we use a simple model which nicely captures the main features observed on our data. The model unambiguously shows that graphene's pseudospin is responsible for such suppression of quasiparticle interferences features in ML graphene, in particular for those with 2qF wavevector. It also confirms scanning tunneling microscopy as a unique technique to probe the pseudospin in graphene samples in real space with nanometer precision. Finally, we show that such observations are robust with energy and obtain with great accuracy the dispersion of the π-bands for both ML and BL graphene in the vicinity of the Fermi level, extracting their main tight binding parameters.
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Submitted 27 August, 2012;
originally announced August 2012.
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Epitaxial graphene morphologies probed by weak (anti)-localization
Authors:
Ather Mahmood,
Cécile Naud,
Clément Bouvier,
Fanny Hiebel,
Pierre Mallet,
Jean-Yves Veuillen,
Laurent Levy,
Didier Chaussende,
Thierry Ouisse
Abstract:
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferr…
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We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].
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Submitted 1 March, 2013; v1 submitted 8 June, 2012;
originally announced June 2012.
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Quasiparticle scattering off phase boundaries in epitaxial graphene
Authors:
A. Mahmood,
P. Mallet,
J. -Y. Veuillen
Abstract:
We investigate the electronic structure of terraces of single layer graphene (SLG) by scanning tunneling microscopy (STM) on samples grown by thermal decomposition of 6H-SiC(0001) crystals in ultra-high vacuum. We focus on the perturbations of the local density of states (LDOS) in the vicinity of edges of SLG terraces. Armchair edges are found to favour intervalley quasiparticle scattering, leadin…
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We investigate the electronic structure of terraces of single layer graphene (SLG) by scanning tunneling microscopy (STM) on samples grown by thermal decomposition of 6H-SiC(0001) crystals in ultra-high vacuum. We focus on the perturbations of the local density of states (LDOS) in the vicinity of edges of SLG terraces. Armchair edges are found to favour intervalley quasiparticle scattering, leading to the (\surd3\times\surd3)R30° LDOS superstructure already reported for graphite edges and more recently for SLG on SiC(0001). Using Fourier transform of LDOS images, we demonstrate that the intrinsic doping of SLG is responsible for a LDOS pattern at the Fermi energy which is more complex than for neutral graphene or graphite, since it combines local (\surd3\times\surd3)R30° superstructure and long range beating modulation. Although these features were already reported by Yang et al. Nanoletters 10, 943 (2010), we propose here an alternative interpretation based on simple arguments classically used to describe standing wave patterns in standard two-dimensional systems. Finally, we discuss the absence of intervalley scattering off other typical boundaries: zig-zag edges and SLG/bilayer graphene junctions.
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Submitted 17 January, 2012;
originally announced January 2012.
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Electronic and structural characterization of divacancies in irradiated graphene
Authors:
Miguel M. Ugeda,
Iván Brihuega,
Fanny Hiebel,
Pierre Mallet,
Jean-Yves Veuillen,
José M. Gómez-Rodríguez,
Félix Ynduráin
Abstract:
We provide a thorough study of a carbon divacancy, a fundamental but almost unexplored point defect in graphene. Low temperature scanning tunneling microscopy (STM) imaging of irradiated graphene on different substrates enabled us to identify a common two-fold symmetry point defect. Our first principles calculations reveal that the structure of this type of defect accommodates two adjacent missing…
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We provide a thorough study of a carbon divacancy, a fundamental but almost unexplored point defect in graphene. Low temperature scanning tunneling microscopy (STM) imaging of irradiated graphene on different substrates enabled us to identify a common two-fold symmetry point defect. Our first principles calculations reveal that the structure of this type of defect accommodates two adjacent missing atoms in a rearranged atomic network formed by two pentagons and one octagon, with no dangling bonds. Scanning tunneling spectroscopy (STS) measurements on divacancies generated in nearly ideal graphene show an electronic spectrum dominated by an empty-states resonance, which is ascribed to a spin-degenerated nearly flat band of $π$-electron nature. While the calculated electronic structure rules out the formation of a magnetic moment around the divacancy, the generation of an electronic resonance near the Fermi level, reveals divacancies as key point defects for tuning electron transport properties in graphene systems.
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Submitted 23 December, 2011;
originally announced December 2011.
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Graphene on the carbon face of SiC: electronic structure modification by hydrogen intercalation
Authors:
F. Hiebel,
P. Mallet,
J. -Y. Veuillen,
L. Magaud
Abstract:
It has been shown that the first C layer on the SiC(0001)(2{\times}2)C surface already exhibits graphene-like electronic structure, with linear pi bands near the Dirac point. Indeed, the (2{\times}2)C reconstruction, with a Si adatom and C restatom structure, efficiently passivates the SiC(0001) surface thanks to an adatom/restatom charge transfer mechanism. Here, we study the effects of interface…
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It has been shown that the first C layer on the SiC(0001)(2{\times}2)C surface already exhibits graphene-like electronic structure, with linear pi bands near the Dirac point. Indeed, the (2{\times}2)C reconstruction, with a Si adatom and C restatom structure, efficiently passivates the SiC(0001) surface thanks to an adatom/restatom charge transfer mechanism. Here, we study the effects of interface modifications on the graphene layer using density functional theory calculations. The modifications we consider are inspired from native interface defects observed by scanning tunneling microscopy. One H atom per 4 {\times} 4 SiC cell (5 {\times} 5 graphene cell) is introduced in order to saturate a restatom dangling bond and hinder the adatom/restatom charge transfer. As a consequence, the graphene layer is doped with electrons from the substrate and the interaction with the adatom states slightly increases. Native interface defects are therefore likely to play an important role in the doping mechanism on the C terminated SiC substrates. We also conclude that an efficient passivation of the C face of SiC by H requires a complete removal of the reconstruction. Otherwise, at variance with the Si terminated SiC substrates, the presence of H at the interface would increase the graphene/substrate interaction.
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Submitted 18 February, 2011;
originally announced February 2011.
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Image potential states as quantum probe of graphene interfaces
Authors:
Sangita Bose,
Vyacheslav M. Silkin,
Robin Ohmann,
Ivan Brihuega,
Lucia Vitali,
Christian H. Michaelis,
Pierre Mallet,
Jean Yves Veuillen,
M. Alexander Schneider,
Evgueni V. Chulkov,
Pedro M. Echenique,
Klaus Kern
Abstract:
Image potential states (IPSs) are electronic states localized in front of a surface in a potential well formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid a double Rydberg series of IPSs has been predicted which is in contrast to a single series present in three-dimensional solids. Here, we confirm this…
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Image potential states (IPSs) are electronic states localized in front of a surface in a potential well formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid a double Rydberg series of IPSs has been predicted which is in contrast to a single series present in three-dimensional solids. Here, we confirm this prediction experimentally for mono- and bilayer graphene. The IPSs of epitaxial graphene on SiC are measured by scanning tunnelling spectroscopy and the results are compared to ab-initio band structure calculations. Despite the presence of the substrate, both calculations and experimental measurements show that the first pair of the double series of IPSs survives, and eventually evolves into a single series for graphite. Thus, IPSs provide an elegant quantum probe of the interfacial coupling in graphene systems.
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Submitted 18 January, 2010;
originally announced January 2010.
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Atomic and electronic structure of monolayer graphene on 6H-SiC(000-1)(3 x 3) : a scanning tunneling microscopy study
Authors:
F. Hiebel,
P. Mallet,
L. Magaud,
J. -Y. Veuillen
Abstract:
We present an investigation of the atomic and electronic structure of graphene monolayer islands on the 6H-SiC(000-1)(3x3) (SiC(3x3)) surface reconstruction using scanning tunneling microscopy (STM) and spectroscopy (STS). The orientation of the graphene lattice changes from one island to the other. In the STM images, this rotational disorder gives rise to various superlattices with periods in t…
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We present an investigation of the atomic and electronic structure of graphene monolayer islands on the 6H-SiC(000-1)(3x3) (SiC(3x3)) surface reconstruction using scanning tunneling microscopy (STM) and spectroscopy (STS). The orientation of the graphene lattice changes from one island to the other. In the STM images, this rotational disorder gives rise to various superlattices with periods in the nm range. We show that those superlattices are moiré patterns (MPs) and we correlate their apparent height with the stacking at the graphene/SiC(3x3) interface. The contrast of the MP in STM images corresponds to a small topographic modulation of the graphene layer.
From STS measurements we find that the substrate surface presents a 1,5 eV wide bandgap encompassing the Fermi level. This substrate surface bandgap subsists below the graphene plane. The tunneling spectra are spatially homogeneous on the islands within the substrate surface gap, which shows that the MPs do not impact the low energy electronic structure of graphene. We conclude that the SiC(3 x 3) reconstruction efficiently passivates the substrate surface and that the properties of the graphene layer which grows on top of it should be similar to those of the ideal material.
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Submitted 4 December, 2009;
originally announced December 2009.
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A Dynamic Vulnerability Map to Assess the Risk of Road Network Traffic Utilization
Authors:
Michel Nabaa,
Cyrille Bertelle,
Antoine Dutot,
Damien Olivier,
Pascal Mallet
Abstract:
Le Havre agglomeration (CODAH) includes 16 establishments classified Seveso with high threshold. In the literature, we construct vulnerability maps to help decision makers assess the risk. Such approaches remain static and do take into account the population displacement in the estimation of the vulnerability. We propose a decision making tool based on a dynamic vulnerability map to evaluate the…
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Le Havre agglomeration (CODAH) includes 16 establishments classified Seveso with high threshold. In the literature, we construct vulnerability maps to help decision makers assess the risk. Such approaches remain static and do take into account the population displacement in the estimation of the vulnerability. We propose a decision making tool based on a dynamic vulnerability map to evaluate the difficulty of evacuation in the different sectors of CODAH. We use a Geographic Information system (GIS) to visualize the map which evolves with the road traffic state through a detection of communities in large graphs algorithm.
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Submitted 9 November, 2009;
originally announced November 2009.
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How the SiC substrate impacts graphene atomic and electronic structures
Authors:
L. Magaud,
F. Hiebel,
F. Varchon,
P. Mallet,
J. -Y. Veuillen
Abstract:
Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by a substrate. We focus here on the graphene-on-SiC system to discuss how the SiC substrate interacts with the graphene layer and to show the effect of the inte…
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Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by a substrate. We focus here on the graphene-on-SiC system to discuss how the SiC substrate interacts with the graphene layer and to show the effect of the interface on graphene atomic and electronic structures.
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Submitted 9 June, 2009;
originally announced June 2009.
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Graphene on the C-terminated SiC (000 $\bar{1}$) surface: An ab initio study
Authors:
L. Magaud,
F. Hiebel,
F. Varchon,
P. Mallet,
J. -Y. Veuillen
Abstract:
The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here. Si adatoms passivate the substrate surface so that the very first C layer presents a linear dispersion characteristic of graphene. A small graphene-substrate…
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The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here. Si adatoms passivate the substrate surface so that the very first C layer presents a linear dispersion characteristic of graphene. A small graphene-substrate interaction remains in agreement with scanning tunneling experiments (F.Hiebel et al. {\it Phys. Rev. B} {\bf 78} 153412 (2008)). The stacking geometry has little influence on the interaction which explains the rotational disorder observed on this face.
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Submitted 10 February, 2009;
originally announced February 2009.
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Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale
Authors:
I. Brihuega,
P. Mallet,
C. Bena,
S. Bose,
C. Michaelis,
L. Vitali,
F. Varchon,
L. Magaud,
K. Kern,
J. Y. Veuillen
Abstract:
Graphene exhibits unconventional two-dimensional electronic properties resulting from the symmetry of its quasiparticles, which leads to the concepts of pseudospin and electronic chirality. Here we report that scanning tunneling microscopy can be used to probe these unique symmetry properties at the nanometer scale. They are reflected in the quantum interference pattern resulting from elastic sc…
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Graphene exhibits unconventional two-dimensional electronic properties resulting from the symmetry of its quasiparticles, which leads to the concepts of pseudospin and electronic chirality. Here we report that scanning tunneling microscopy can be used to probe these unique symmetry properties at the nanometer scale. They are reflected in the quantum interference pattern resulting from elastic scattering off impurities, and they can be directly read from its fast Fourier transform. Our data, complemented by theoretical calculations, demonstrate that the pseudospin and the electronic chirality in epitaxial graphene on SiC(0001) correspond to the ones predicted for ideal graphene.
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Submitted 17 November, 2008; v1 submitted 16 June, 2008;
originally announced June 2008.
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Few layers graphene on 6H-SiC(000-1): an STM study
Authors:
François Varchon,
Pierre Mallet,
Laurence Magaud,
Jean-Yves Veuillen
Abstract:
We have analyzed by Scanning Tunnelling Microscopy (STM) thin films made of few (3-5) graphene layers grown on the C terminated face of 6H-SiC in order to identify the nature of the azimuthal disorder reported in this material. We observe superstructures which are interpreted as Moiré patterns due to a misorientation angle between consecutive layers. The presence of stacking faults is expected t…
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We have analyzed by Scanning Tunnelling Microscopy (STM) thin films made of few (3-5) graphene layers grown on the C terminated face of 6H-SiC in order to identify the nature of the azimuthal disorder reported in this material. We observe superstructures which are interpreted as Moiré patterns due to a misorientation angle between consecutive layers. The presence of stacking faults is expected to lead to electronic properties reminiscent of single layer graphene even for multilayer samples. Our results indicate that this apparent electronic decoupling of the layers can show up in STM data.
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Submitted 8 January, 2008;
originally announced January 2008.
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Ripples in epitaxial graphene
Authors:
F. Varchon,
P. Mallet,
J. -Y. Veuillen,
L. Magaud
Abstract:
Graphene outstanding properties directly come from its pecular electronic structure and thus from the honeycomb lattice symmetry. The way interaction with the substrate impact this lattice is of primary importance. This is peculiarly true for epitaxial graphene because of the SiC substrate. The advantage of this system that produces macroscopic samples in registry with a substrate could turn to…
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Graphene outstanding properties directly come from its pecular electronic structure and thus from the honeycomb lattice symmetry. The way interaction with the substrate impact this lattice is of primary importance. This is peculiarly true for epitaxial graphene because of the SiC substrate. The advantage of this system that produces macroscopic samples in registry with a substrate could turn to a major drawback if the graphene lattice reveals to be strongly distorted. Extensive ab initio calculations supported by Scanning Tunneling Microscopy experiments, demonstrate here that the substrate indeed induces a strong nanostructuration of the interface carbon layer. It propagates to the above C layer where it generates incommensurate ripples in the honeycomb lattice.
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Submitted 20 December, 2007;
originally announced December 2007.
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Electron states of mono- and bilayer graphene on SiC probed by STM
Authors:
Pierre Mallet,
François Varchon,
Cécile Naud,
Laurence Magaud,
Claire Berger,
Jean-Yves Veuillen
Abstract:
We present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic scale images, we identify two different kinds of terraces, which we unambiguously attribute to mono- and bilayer graphene capping a C-rich interface. At low temperature, both terraces show $(\sqrt{3}\times \sqrt{3})$ quantum interferences generated…
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We present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic scale images, we identify two different kinds of terraces, which we unambiguously attribute to mono- and bilayer graphene capping a C-rich interface. At low temperature, both terraces show $(\sqrt{3}\times \sqrt{3})$ quantum interferences generated by static impurities. Such interferences are a fingerprint of $π$-like states close to the Fermi level. We conclude that the metallic states of the first graphene layer are almost unperturbed by the underlying interface, in agreement with recent photoemission experiments (A. Bostwick et al., Nature Physics 3, 36 (2007))
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Submitted 19 February, 2007;
originally announced February 2007.
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Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
Authors:
François Varchon,
R. Feng,
J. Hass,
X. Li,
Bich N. Nguyen,
Cécile Naud,
Pierre Mallet,
Jean Yves Veuillen,
Claire Berger,
E. H. Conrad,
Laurence Magaud
Abstract:
Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of these films implies a strong interface bond that should induce perturbations in the graphene electronic structure. Our DFT calculations confirm this strong substr…
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Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of these films implies a strong interface bond that should induce perturbations in the graphene electronic structure. Our DFT calculations confirm this strong substrate-graphite bond in the first adsorbed carbon layer that prevents any graphitic electronic properties for this layer. However, the graphitic nature of the film is recovered by the second and third absorbed layers. This effect is seen in both the (0001)and $(000\bar{1})$ 4H SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. It causes the graphene to be doped and gives rise to a gap opening at the Dirac point after 3 carbon layers are deposited in agreement with recent ARPES experiments (T.Ohta et al, Science {\bf 313} (2006) 951).
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Submitted 13 February, 2007;
originally announced February 2007.
