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Design and Performance of the ALPS II Regeneration Cavity
Authors:
Todd Kozlowski,
Li-Wei Wei,
Aaron D. Spector,
Ayman Hallal,
Henry Fraedrich,
Daniel C. Brotherton,
Isabella Oceano,
Aldo Ejlli,
Hartmut Grote,
Harold Hollis,
Kanioar Karan,
Guido Mueller,
D. B. Tanner,
Benno Willke,
Axel Lindner
Abstract:
The Regeneration Cavity (RC) is a critical component of the Any Light Particle Search II (ALPS II) experiment. It increases the signal from possible axions and axion-like particles in the experiment by nearly four orders of magnitude. The total round-trip optical losses of the power circulating in the cavity must be minimized in order to maximize the resonant enhancement of the cavity, which is an…
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The Regeneration Cavity (RC) is a critical component of the Any Light Particle Search II (ALPS II) experiment. It increases the signal from possible axions and axion-like particles in the experiment by nearly four orders of magnitude. The total round-trip optical losses of the power circulating in the cavity must be minimized in order to maximize the resonant enhancement of the cavity, which is an important figure of merit for ALPS II. Lower optical losses also increase the cavity storage time and with the 123 meter long ALPS II RC we have demonstrated the longest storage time of a two-mirror optical cavity. We measured a storage time of $7.17 \pm 0.01$ ms, equivalent to a linewidth of 44.4 Hz and a finesse of 27,500 at a wavelength of 1064 nm.
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Submitted 23 August, 2024;
originally announced August 2024.
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Mechanism of Spin-Orbit Torques in Platinum Oxide Systems
Authors:
Jayshankar Nath,
Alexandru Vladimir Trifu,
Mihai Sebastian Gabor,
Ali Hallal,
Stephane Auffret,
Sebastien Labau,
Aymen Mahjoub,
Edmond Chan,
Avinash Kumar Chaurasiya,
Amrit Kumar Mondal,
Haozhe Yang,
Eva Schmoranzerova,
Mohamed Ali Nsibi,
Isabelle Joumard,
Anjan Barman,
Bernard Pelissier,
Mairbek Chshiev,
Gilles Gaudin,
Ioan Mihai Miron
Abstract:
Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of for…
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Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, we reconcile these differences by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, we chose Pt because of the strong SOT and the low enthalpy of formation of its oxides. We find evidence of an oxide inversion layer at the FM/HM interface: the oxygen is drawn into the FM, while the HM remains metallic near the interface. We further demonstrate that the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, we find that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation.
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Submitted 13 December, 2021;
originally announced December 2021.
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Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2
Authors:
Mário Ribeiro,
Giulio Gentile,
Alain Marty,
Djordje Dosenovic,
Hanako Okuno,
Céline Vergnaud,
Jean-François Jacquot,
Denis Jalabert,
Danilo Longo,
Philippe Ohresser,
Ali Hallal,
Mairbek Chshiev,
Olivier Boulle,
Frédéric Bonell,
Matthieu Jamet
Abstract:
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or abo…
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In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room-temperature and the ability to grow films over large areas. Here we demonstrate the large-area growth of single-crystal ultrathin films of stoichiometric Fe5GeTe2 on an insulating substrate using molecular beam epitaxy. Magnetic measurements show the persistence of soft ferromagnetism up to room temperature, with a Curie temperature of 293 K, and a weak out-of-plane magnetocrystalline anisotropy. Surface, chemical, and structural characterizations confirm the layer-by-layer growth, 5:1:2 Fe:Ge:Te stoichiometric elementary composition, and single crystalline character of the films.
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Submitted 24 June, 2021;
originally announced June 2021.
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Coexistence of ferromagnetism and spin-orbit coupling by incorporation of platinum in two-dimensional VSe$_2$
Authors:
E. Vélez-Fort,
A. Hallal,
R. Sant,
T. Guillet,
K. Abdukayumov,
A. Marty,
C. Vergnaud,
J. -F. Jacquot,
D. Jalabert,
J. Fujii,
I. Vobornik,
J. Rault,
N. B. Brookes,
D. Longo,
P. Ohresser,
A. Ouerghi,
J. -Y. Veuillen,
P. Mallet,
H. Boukari,
H. Okuno,
M. Chshiev,
F. Bonell,
M. Jamet
Abstract:
We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homo…
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We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homogeneous 2D alloy restores ferromagnetic order with Curie temperatures of 6 K for 5 monolayers and 25 K for one monolayer of V$_{0.65}$Pt$_{0.35}$Se$_2$. Moreover, the presence of platinum atoms gives rise to Rashba spin-orbit coupling in (V,Pt)Se$_2$ providing an original platform to study the interplay between ferromagnetism and spin-orbit coupling in the 2D limit.
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Submitted 20 May, 2021;
originally announced May 2021.
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Rashba-type Dzyaloshinskii-Moriya interaction, perpendicular magnetic anisotropy and skyrmion states at 2D materials/Co interfaces
Authors:
Ali Hallal,
Jinghua Liang,
Fatima Ibrahim,
Hongxin Yang,
Albert Fert,
Mairbek Chshiev
Abstract:
We report a significant Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) at interfaces comprising hexagonal boron nitride (h-BN) and Co. By comparing the behavior of these phenomena at graphene/Co and h-BN/Co interfaces, it is found that the DMI in latter increases as a function of Co thickness and beyond three monolayers stabilizes with one order of magnitude la…
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We report a significant Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) at interfaces comprising hexagonal boron nitride (h-BN) and Co. By comparing the behavior of these phenomena at graphene/Co and h-BN/Co interfaces, it is found that the DMI in latter increases as a function of Co thickness and beyond three monolayers stabilizes with one order of magnitude larger values compared to those at graphene/Co, where the DMI shows opposite decreasing behavior. At the same time, the PMA for both systems shows similar trends with larger values for graphene/Co and no significant variations for all thickness ranges of Co. Furthermore, using micromagnetic simulations we demonstrate that such significant DMI and PMA values remaining stable over large range of Co thickness give rise to formation of skyrmions with small applied external fields in the range of 200-250 mT up to 100 K temperatures. These findings open up further possibilities towards integrating two-dimensional (2D) materials in spin-orbitronics devices.
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Submitted 19 May, 2021;
originally announced May 2021.
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Spin charge conversion in Rashba split ferromagnetic interfaces
Authors:
Olivier Rousseau,
Cosimo Gorini,
Fatima Ibrahim,
Jean-Yves Chauleau,
Aurélie Solignac,
Ali Hallal,
Sebastian Tölle,
Mair Chshiev,
Michel Viret
Abstract:
We show here theoretically and experimentally that a Rashba-split electron state inside a ferromagnet can efficiently convert a dynamical spin accumulation into an electrical voltage. The effect is understood to stem from the Rashba splitting but with a symmetry linked to the magnetization direction. It is experimentally measured by spin pumping in a CoFeB/MgO structure where it is found to be as…
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We show here theoretically and experimentally that a Rashba-split electron state inside a ferromagnet can efficiently convert a dynamical spin accumulation into an electrical voltage. The effect is understood to stem from the Rashba splitting but with a symmetry linked to the magnetization direction. It is experimentally measured by spin pumping in a CoFeB/MgO structure where it is found to be as efficient as the inverse spin Hall effect at play when Pt replaces MgO, with the extra advantage of not affecting the damping in the ferromagnet.
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Submitted 31 March, 2021;
originally announced March 2021.
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Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point
Authors:
Sambit Ghosh,
Taro Komori,
Ali Hallal,
Jose Peña Garcia,
Toshiki Gushi,
Taku Hirose,
Haruka Mitarai,
Hanako Okuno,
Jan Vogel,
Mairbek Chshiev,
Jean-Philippe Attané,
Laurent Vila,
Takashi Suemasu,
Stefania Pizzini
Abstract:
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride…
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Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations.
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Submitted 11 March, 2021; v1 submitted 11 January, 2021;
originally announced January 2021.
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Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces
Authors:
Fatima Ibrahim,
Ali Hallal,
Alan Kalitsov,
Derek Stewart,
Bernard Dieny,
Mairbek Chshiev
Abstract:
The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive to thermal effects. Thus, understanding the temperature dependence of the magnetic anisotropy is crucial…
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The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive to thermal effects. Thus, understanding the temperature dependence of the magnetic anisotropy is crucial. In this work, we theoretically address the correlation between temperature dependence of PMA and magnetization in typical Fe/MgO-based structures. In particular, the possible mechanisms behind the experiments reporting deviations from the Callen and Callen scaling power law are analyzed. At ideal interfaces, first-principles calculations reveal (i) small high-order anisotropy constants compared to first order and (ii) enhanced exchange constants. Considering these two intrinsic effects in the atomistic simulations, the temperature-dependence of the total and layer-resolved anisotropy are found to follow the Callen and Callen scaling power law, thus ruling out an intrinsic microscopic mechanism underlying deviations from this law. Besides, two possible extrinsic macroscopic mechanisms are unveiled namely the influence of the dead layer, often present in the storage layer of STT-MRAM cells, and the spatial inhomogeneities of the interfacial magnetic anisotropy. About the first mechanism, we show that the presence of a dead layer tends to reduce the scaling exponents. In the second mechanism, increasing the percentage of inhomogeneity in the interfacial PMA is revealed to decrease the scaling exponent. These results allow us to explain the difference in scaling exponents relating anisotropy and magnetization thermal variations reported in earlier experiments. This is crucial for the understanding of the thermal stability of the storage layer magnetization in STT-MRAM applications.
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Submitted 27 May, 2022; v1 submitted 4 November, 2020;
originally announced November 2020.
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The heterodyne sensing system for the ALPS II search for sub-eV weakly interacting particles
Authors:
Ayman Hallal,
Giuseppe Messineo,
Mauricio Diaz Ortiz,
Joseph Gleason,
Harold Hollis,
D. B. Tanner,
Guido Mueller,
Aaron Spector
Abstract:
ALPS II, the Any Light Particle Search, is a second-generation Light Shining through a Wall experiment that hunts for axion-like particles. The experiment is currently transitioning from the design and construction phase to the commissioning phase, with science runs expected to start in 2021. ALPS II plans to use two different sensing schemes to confirm the potential detection of axion-like partic…
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ALPS II, the Any Light Particle Search, is a second-generation Light Shining through a Wall experiment that hunts for axion-like particles. The experiment is currently transitioning from the design and construction phase to the commissioning phase, with science runs expected to start in 2021. ALPS II plans to use two different sensing schemes to confirm the potential detection of axion-like particles or to verify an upper limit on their coupling strength to two photons of $g_{aγγ}\leq2\times10^{-11}\text{GeV}^{-1}$. This paper discusses a heterodyne sensing scheme (HET) which will be the first scheme deployed to detect the regenerated light. It presents critical details of the optical layout, the length and alignment sensing scheme, design features to minimize spurious signals from stray light, as well as several control and veto channels specific to HET which are needed to commission and operate the instrument and to calibrate the detector sensitivity.
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Submitted 7 February, 2021; v1 submitted 1 October, 2020;
originally announced October 2020.
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Design of the ALPS II Optical System
Authors:
M. Diaz Ortiz,
J. Gleason,
H. Grote,
A. Hallal,
M. T. Hartman,
H. Hollis,
K. S. Isleif,
A. James,
K. Karan,
T. Kozlowski,
A. Lindner,
G. Messineo,
G. Mueller,
J. H. Poeld,
R. C. G. Smith,
A. D. Spector,
D. B. Tanner,
L. -W. Wei,
B. Willke
Abstract:
The Any Light Particle Search II (ALPS II) is an experiment currently being built at DESY in Hamburg, Germany, that will use a light-shining-through-a-wall (LSW) approach to search for axion-like particles. ALPS II represents a significant step forward for these types of experiments as it will use 24 superconducting dipole magnets, along with dual, high-finesse, 122 m long optical cavities. This p…
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The Any Light Particle Search II (ALPS II) is an experiment currently being built at DESY in Hamburg, Germany, that will use a light-shining-through-a-wall (LSW) approach to search for axion-like particles. ALPS II represents a significant step forward for these types of experiments as it will use 24 superconducting dipole magnets, along with dual, high-finesse, 122 m long optical cavities. This paper gives the first comprehensive recipe for the realization of the idea, proposed over 30 years ago, to use optical cavities before and after the wall to increase the power of the regenerated photon signal. The experiment is designed to achieve a sensitivity to the coupling between axion-like particles and photons down to g=2e-11 1/GeV for masses below 0.1 meV, more than three orders of magnitude beyond the sensitivity of previous laboratory experiments. The layout and main components that define ALPS II are discussed along with plans for reaching design sensitivity. An accompanying paper (Hallal, et al [1]) offers a more in-depth description of the heterodyne detection scheme, the first of two independent detection systems that will be implemented in ALPS II.
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Submitted 21 December, 2021; v1 submitted 29 September, 2020;
originally announced September 2020.
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Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer
Authors:
Libor Vojáček,
Fatima Ibrahim,
Ali Hallal,
Bernard Dieny,
Mairbek Chshiev
Abstract:
Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage l…
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Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Bruno's model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands.
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Submitted 31 July, 2020;
originally announced July 2020.
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Spin-orbitronics at a topological insulator-semiconductor interface
Authors:
T. Guillet,
C. Zucchetti,
A. Marchionni,
A. Hallal,
P. Biagioni,
C. Vergnaud,
A. Marty,
M. Finazzi,
F. Ciccacci,
M. Chshiev,
F. Bottegoni,
M. Jamet
Abstract:
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi…
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Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.
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Submitted 24 November, 2019;
originally announced November 2019.
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Unveiling multiferroic proximity effect in graphene
Authors:
Fatima Ibrahim,
Ali Hallal,
Daniel Solis Lerma,
Xavier Waintal,
Evgeny Y. Tsymbal,
Mairbek Chshiev
Abstract:
We demonstrate that electronic and magnetic properties of graphene can be tuned via proximity of multiferroic substrate. Our first-principles calculations performed both with and without spin-orbit coupling clearly show that by contacting graphene with bismuth ferrite BiFeO$_3$ (BFO) film, the spin-dependent electronic structure of graphene is strongly impacted both by the magnetic order and by el…
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We demonstrate that electronic and magnetic properties of graphene can be tuned via proximity of multiferroic substrate. Our first-principles calculations performed both with and without spin-orbit coupling clearly show that by contacting graphene with bismuth ferrite BiFeO$_3$ (BFO) film, the spin-dependent electronic structure of graphene is strongly impacted both by the magnetic order and by electric polarization in the underlying BFO. Based on extracted Hamiltonian parameters obtained from the graphene band structure, we propose a concept of six-resistance device based on exploring multiferroic proximity effect giving rise to significant proximity electro- (PER), magneto- (PMR), and multiferroic (PMER) resistance effects. This finding paves a way towards multiferroic control of magnetic properties in two dimensional materials.
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Submitted 6 September, 2019;
originally announced September 2019.
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Self-induced inverse spin Hall effect in ferromagnets: demonstration through non-monotonous temperature-dependence in permalloy
Authors:
O. Gladii,
L. Frangou,
A. Hallal,
R. L. Seeger,
P. Noel,
G. Forestier,
S. Auffret,
M. Rubio-Roy,
P. Warin,
L. Vila,
S. Wimmer,
H. Ebert,
S. Gambarelli,
M. Chshiev,
V. Baltz
Abstract:
We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pumping experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew…
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We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pumping experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew scattering, side-jump, and intrinsic contributions to the T-dependent spin Hall conductivity. Experimental data were similar whatever the material in contact with permalloy (oxides or metals), and revealed an increase of produced current with t, demonstrating a bulk origin of the effect.
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Submitted 3 September, 2019;
originally announced September 2019.
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Graphene-based spinmechatronic valve
Authors:
Ali Hallal
Abstract:
Interlayer twist between van der Waals graphene crystals led to the discovery of superconducting and insulating states near the magic angle. In this work, we exploit this mechanical degree of freedom by twisting the graphene middle layer in a trilayer graphene spacer between two metallic lead (Magnetic and nonmagnetic). A large difference in conductance is found depending on the angle of twist bet…
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Interlayer twist between van der Waals graphene crystals led to the discovery of superconducting and insulating states near the magic angle. In this work, we exploit this mechanical degree of freedom by twisting the graphene middle layer in a trilayer graphene spacer between two metallic lead (Magnetic and nonmagnetic). A large difference in conductance is found depending on the angle of twist between the middle layer graphene and the ones at the interface this difference, called twisting resistance, reach more than 1000% in the non-magnetic Cu case. For the magnetic Ni case, the magneto-resistance decreases and the difference in conductance between twisted and not twisted depends strongly on the relative magnetization configuration. For the parallel configuration, the twisting resistance is about -40%, while for the anti-parallel configuration it can reach up to 130%. Furthermore, we show that the twisting resistance can be enhanced by inserting a thin Cu layer at the interface of Ni/graphene where it reaches a value of 200% and 1600% for parallel and antiparallel configurations, respectively. These finding could pave the way toward the integration of 2D materials on novel spinmechatronics based devices.
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Submitted 12 August, 2019;
originally announced August 2019.
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Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures
Authors:
Tae-Eon Park,
Licong Peng,
Jinghua Liang,
Ali Hallal,
Fehmi Sami Yasin,
Xichao Zhang,
Sung Jong Kim,
Kyung Mee Song,
Kwangsu Kim,
Markus Weigand,
Gisela Schuetz,
Simone Finizio,
Joerg Raabe,
Karin Garcia,
Jing Xia,
Yan Zhou,
Motohiko Ezawa,
Xiaoxi Liu,
Joonyeon Chang,
Hyun Cheol Koo,
Young Duck Kim,
Mairbek Chshiev,
Albert Fert,
Hongxin Yang,
Xiuzhen Yu
, et al. (1 additional authors not shown)
Abstract:
Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy…
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Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy, leading to the formation of topological magnetic textures such as skyrmions through the Dzyaloshinskii-Moriya interaction (DMI). Here, we report the experimental observation of Néel-type chiral magnetic skyrmions and their lattice (SkX) formation in a vdW ferromagnet Fe3GeTe2 (FGT). We demonstrate the ability to drive individual skyrmion by short current pulses along a vdW heterostructure, FGT/h-BN, as highly required for any skyrmion-based spintronic device. Using first principle calculations supported by experiments, we unveil the origin of DMI being the interfaces with oxides, which then allows us to engineer vdW heterostructures for desired chiral states. Our finding opens the door to topological spin textures in the 2D vdW magnet and their potential device application.
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Submitted 25 June, 2020; v1 submitted 2 July, 2019;
originally announced July 2019.
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Proximity magnetoresistance in graphene induced by magnetic insulators
Authors:
D. A. Solis,
A. Hallal,
X. Waintal,
M. Chshiev
Abstract:
We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS. We find a significant PMR (up to 100%) values defined as a relative change of graphene conductance w…
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We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS. We find a significant PMR (up to 100%) values defined as a relative change of graphene conductance with respect to parallel and antiparallel alignment of two proximity induced magnetic regions within graphene. Namely, for high Curie temperature (Tc) CFO and YIG insulators which are particularly important for applications, we obtain 22% and 77% at room temperature, respectively. For low Tc chalcogenides, EuO and EuS, the PMR is 100% in both cases. Furthermore, the PMR is robust with respect to system dimensions and edge type termination. Our findings show that it is possible to induce spin polarized currents in graphene with no direct injection through magnetic materials.
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Submitted 11 June, 2019;
originally announced June 2019.
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Very large Dzyaloshinskii-Moriya interaction in two-dimensional Janus manganese dichalcogenides and its application to realize skyrmion states
Authors:
Jinghua Liang,
Weiwei Wang,
Haifeng Du,
Ali Hallal,
Karin Garcia,
Mairbek Chshiev,
Albert Fert,
Hongxin Yang
Abstract:
The Dzyaloshinskii-Moriya interaction (DMI), which only exists in noncentrosymmetric systems, is responsible for the formation of exotic chiral magnetic states. The absence of DMI in most two-dimensional (2D) magnetic materials is due to their intrinsic inversion symmetry. Here, using first-principles calculations, we demonstrate that significant DMI can be obtained in a series of Janus monolayers…
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The Dzyaloshinskii-Moriya interaction (DMI), which only exists in noncentrosymmetric systems, is responsible for the formation of exotic chiral magnetic states. The absence of DMI in most two-dimensional (2D) magnetic materials is due to their intrinsic inversion symmetry. Here, using first-principles calculations, we demonstrate that significant DMI can be obtained in a series of Janus monolayers of manganese dichalcogenides MnXY in which the difference between X and Y on the opposites sides of Mn breaks the inversion symmetry. In particular, the DMI amplitudes of MnSeTe and MnSTe are comparable to those of state-of-the-art ferromagnet/heavy metal (FM/HM) heterostructures. In addition, by performing Monte Carlo simulations, we find that at low temperatures the ground states of the MnSeTe and MnSTe monolayers can transform from ferromagnetic states with worm-like magnetic domains into the skyrmion states by applying external magnetic field. At increasing temperature, the skyrmion states starts fluctuating above 50 K before an evolution to a completely disordered structure at higher temperature. The present results pave the way for new device concepts utilizing chiral magnetic structures in specially designed 2D ferromagnetic materials.
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Submitted 30 March, 2020; v1 submitted 3 June, 2019;
originally announced June 2019.
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Impact of intergrain spin transfer torques due to huge thermal gradients on the performance of heat assisted magnetic recording
Authors:
Bernard Dieny,
Mair Chshiev,
Brian Charles,
Nikita Strelkov,
Alain Truong,
Olivier Fruchart,
Ali Hallal,
Jian Wang,
Yukiko K. Takahashi,
Tomohito Mizuno,
Kazuhiro Hono
Abstract:
Heat assisted magnetic recording (HAMR) is a new technology which uses temporary near field laser heating of the media during write to increase hard disk drive storage density. By using plasmonic antenna embedded in the write head, extremely high thermal gradient are created in the recording media (up to 10K/nm). State of the art HAMR media consists of grains of FePtX ordered alloys exhibiting hig…
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Heat assisted magnetic recording (HAMR) is a new technology which uses temporary near field laser heating of the media during write to increase hard disk drive storage density. By using plasmonic antenna embedded in the write head, extremely high thermal gradient are created in the recording media (up to 10K/nm). State of the art HAMR media consists of grains of FePtX ordered alloys exhibiting high perpendicular anisotropy separated by insulating grain boundaries. Nearby the plasmonic antenna, the difference of temperature between two 8nm wide neighboring grains in the media can reach 80K, representing a gigantic thermal gradient of ~40K/nm across the grain boundary. Such situations with much weaker thermal gradient (~1K/nm, already considered as very large) have already been studied in the field of spincaloritronics. There, it was shown that very large spin transfer torques due to thermal gradients can arise in magnetic tunnel junctions which can even yield magnetization switching. Considering that two neighboring grains separated by an insulating grain boundary in a HAMR media can be viewed as a magnetic tunnel junction and that the thermal gradients in HAMR are one to two orders of magnitude larger than those existing in conventional spincaloritronics, one may expect a major impact from these thermal torques on magnetization switching dynamics and therefore on HAMR recording performances. This paper combines theory, experiments aiming at determining the polarization of tunneling electrons across the media grain boundaries, and micromagnetic simulations of recording process. It is shown that the thermal in-plane torque can have a detrimental impact on the recording performances by favoring antiparallel magnetic alignment between neighboring grains during the media cooling. Implications on media design are discussed in order to limit the impact of these thermal torques.
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Submitted 8 December, 2017;
originally announced December 2017.
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Coherent Detection of Ultra-weak Electromagnetic Fields
Authors:
Zachary R. Bush,
Simon Barke,
Harold Hollis,
Aaron D. Spector,
Ayman Hallal,
Giuseppe Messineo,
D. B. Tanner,
Guido Mueller
Abstract:
We explore the application of heterodyne interferometry for a weak-field coherent detection scheme. The methods detailed here will be used in ALPS II, an experiment designed to search for weakly-interacting, sub-eV particles. For ALPS II to reach its design sensitivity this detection system must be capable of accurately measuring fields with equivalent amplitudes on the order of 10$^{-5}$ photons…
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We explore the application of heterodyne interferometry for a weak-field coherent detection scheme. The methods detailed here will be used in ALPS II, an experiment designed to search for weakly-interacting, sub-eV particles. For ALPS II to reach its design sensitivity this detection system must be capable of accurately measuring fields with equivalent amplitudes on the order of 10$^{-5}$ photons per second or greater. We present initial results of an equivalent dark count rate on the order of $10^{-5}$ photons per second as well as successful generation and detection of a signal with a field strength equivalent to $10^{-2}$ photons per second.
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Submitted 20 November, 2018; v1 submitted 11 October, 2017;
originally announced October 2017.
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Tailoring magnetic insulator proximity effects in graphene: First-principles calculations
Authors:
A. Hallal,
F. Ibrahim,
H. X. Yang,
S. Roche,
M. Chshiev
Abstract:
We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). The obtained exchange-splitting varies from te…
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We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). The obtained exchange-splitting varies from tens to hundreds of meV. We also find an electron doping induced by YIG and europium chalcogenides substrates, that shift the Fermi level up to 0.78 eV and 1.3 eV respectively, whereas hole doping up to 0.5 eV is generated by CFO. Furthermore, we study the variation of the extracted exchange and tight binding parameters as a function of the EuO and EuS thicknesses. We show that those parameters are robust to thickness variation such that a single monolayer of magnetic insulator can induce a large magnetic proximity effect on graphene. Those findings pave the way towards possible engineering of graphene spin-gating by proximity effect especially in view of recent experiments advancement.
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Submitted 29 October, 2016;
originally announced October 2016.
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Giant variation of the perpendicular magnetic anisotropy at Fe/MgO interfaces by oxygen migration: a first-principles study
Authors:
F. Ibrahim,
A. Hallal,
B. Dieny,
M. Chshiev
Abstract:
A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the interface. We find that the surface anisotropy energy exhibits a Boltzmann sigmoidal behavior as a function of the migrated O-atoms concentration. The obtained…
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A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the interface. We find that the surface anisotropy energy exhibits a Boltzmann sigmoidal behavior as a function of the migrated O-atoms concentration. The obtained variation of the VCMA efficiency factor $β$ reveals a saturation limit beyond a critical concentration of migrated O, about $54\%$, at which the anisotropy switches from perpendicular to in plane. Furthermore, depending on the range of variation of the applied voltage, two regimes associated with reversible or irreversible ions displacement are predicted to occur, yielding different VCMA response. According to our findings, one can distinguish from the order of magnitude of $β$ the VCMA driving mechanism: an effect of several tens of fJ/(V.m) is likely associated to charge-mediated effect combined with slight reversible oxygen displacements whereas an effect of the order of thousands of fJ/(V.m) is more likely associated with irreversible oxygen ionic migration.
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Submitted 27 December, 2018; v1 submitted 27 October, 2016;
originally announced October 2016.
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Direct evidence for minority spin gap in the Co2MnSi Heusler alloy
Authors:
Stéphane Andrieu,
Amina Neggache,
Thomas Hauet,
Thibaut Devolder,
Ali Hallal,
Mairbek Chschiev,
Alexandre Bataille,
Patrick Le Fevre,
Francois Bertran
Abstract:
Half Metal Magnets are of great interest in the field of spintronics because of their potential full spin-polarization at the Fermi level and low magnetization damping. The high Curie temperature and predicted 0.7eV minority spin gap make the Heusler alloy Co2MnSi very promising for applications.We investigated the half-metallic magnetic character of this alloy using spin-resolved photoemission, a…
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Half Metal Magnets are of great interest in the field of spintronics because of their potential full spin-polarization at the Fermi level and low magnetization damping. The high Curie temperature and predicted 0.7eV minority spin gap make the Heusler alloy Co2MnSi very promising for applications.We investigated the half-metallic magnetic character of this alloy using spin-resolved photoemission, ab initio calculation and ferromagnetic resonance. At the surface of Co2MnSi, a gap in the minority spin channel is observed, leading to 100% spin polarization. However, this gap is 0.3 eV below the Fermi level and a minority spin state is observed at the Fermi level. We show that a minority spin gap at the Fermi energy can nevertheless be recovered either by changing the stoichiometry of the alloy or by covering the surface by Mn, MnSi or MgO. This results in extremely small damping coefficients reaching values as low as 7x 10-4.
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Submitted 17 October, 2015;
originally announced October 2015.
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Anatomy and giant enhancement of the perpendicular magnetic anisotropy of cobalt-graphene heterostructures
Authors:
Hongxin Yang,
Anh Duc Vu,
Ali Hallal,
Nicolas Rougemaille,
Johann Coraux,
Gong Chen,
Andreas K. Schmid,
Mairbek Chshiev
Abstract:
We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25~Å. These findings are s…
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We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25~Å. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis which help understanding the physical mechanisms of PMA and more practically can help design structures with giant PMA. As an example, we propose super-exchange stabilized Co-graphene heterostructures with a robust out-of-plane constant effective PMA and linearly increasing interfacial anisotropy as a function of film thickness. These findings point towards possibilities to engineer graphene/ferromagnetic metal heterostructures with giant magnetic anisotropy more than 20 times larger compared to conventional multilayers, which constitutes a hallmark for future graphene and traditional spintronic technologies.
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Submitted 26 August, 2015;
originally announced August 2015.
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Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
Authors:
Shouzhong Peng,
Mengxing Wang,
Hongxin Yang,
Lang Zeng,
Jiang Nan,
Jiaqi Zhou,
Youguang Zhang,
Ali Hallal,
Mairbek Chshiev,
Kang L. Wang,
Qianfan Zhang,
Weisheng Zhao
Abstract:
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that…
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Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbital coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.
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Submitted 28 February, 2017; v1 submitted 12 June, 2015;
originally announced June 2015.
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Band edge noise spectroscopy of a magnetic tunnel junction
Authors:
Farkhad G. Aliev,
Juan Pedro Cascales,
Ali Hallal,
Mairbek Chshiev,
Stephane Andrieu
Abstract:
We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions show clear anomalies at specific applied voltages, reflecting electron tunneling to the band edges of the magnetic electrodes. The change in magnitude of these no…
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We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions show clear anomalies at specific applied voltages, reflecting electron tunneling to the band edges of the magnetic electrodes. The change in magnitude of these noise anomalies with the magnetic state allows evaluating the degree of spin mixing between the spin polarized bands at the ferromagnet/insulator interface. Our results are in qualitative agreement with numerical calculations.
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Submitted 22 January, 2015;
originally announced January 2015.
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First principles investigation of magnetocrystalline anisotropy at the L2$_1$ Full Heusler|MgO interfaces and tunnel junctions
Authors:
Rajasekarakumar Vadapoo,
Ali Hallal,
Hongxin Yang,
Mairbek Chshiev
Abstract:
Magnetocrystalline anisotropy at Heusler alloy$|$MgO interfaces have been studied using first principles calculations. It is found that Co terminated Co$_{2}$FeAl$|$MgO interfaces show perpendicular magnetic anisotropy up to 1.31 mJ/m$^2$, while those with FeAl termination exhibit in-plane magnetic anisotropy. Atomic layer resolved analysis indicates that the origin of perpendicular magnetic aniso…
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Magnetocrystalline anisotropy at Heusler alloy$|$MgO interfaces have been studied using first principles calculations. It is found that Co terminated Co$_{2}$FeAl$|$MgO interfaces show perpendicular magnetic anisotropy up to 1.31 mJ/m$^2$, while those with FeAl termination exhibit in-plane magnetic anisotropy. Atomic layer resolved analysis indicates that the origin of perpendicular magnetic anisotropy in Co$_{2}$FeAl$|$MgO interfaces can be attributed to the out-of-plane orbital contributions of interfacial Co atoms. At the same time, Co$_{2}$MnGe and Co$_{2}$MnSi interfaced with MgO tend to favor in-plane magnetic anisotropy for all terminations.
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Submitted 16 September, 2016; v1 submitted 22 April, 2014;
originally announced April 2014.
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Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
Authors:
S. Liang,
T. T. Zhang,
P. Barate,
J. Frougier,
M. Vidal,
P. Renucci,
B. Xu,
H. Jaffrès,
J. M. George,
X. Devaux,
M. Hehn,
X. Marie,
S. Mangin,
H. Yang,
A. Hallal,
M. Chshiev,
T. Amand,
H. Liu,
D. Liu,
X. Han,
Z. Wang,
Y. Lu
Abstract:
We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence pola…
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We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature.
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Submitted 17 April, 2014;
originally announced April 2014.
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Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions
Authors:
A. Hallal,
B. Dieny,
M. Chshiev
Abstract:
Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its posi…
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Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its position within the bulk allows maintaining high surface PMA. Moreover, the effective magnetic anisotropy has a strong tendency to go from in-plane to out-of-plane character as a function of Cr and V concentration favoring out-of-plane magnetization direction for ~1.5 nm thick Fe layers at impurity concentrations above 20 %. At the same time, spin polarization is not affected and even enhanced in most situations favoring an increase of tunnel magnetoresistance (TMR) values.
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Submitted 14 April, 2014;
originally announced April 2014.
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Anatomy of perpendicular magnetic anisotropy in Fe/MgO magnetic tunnel junctions: First principles insight
Authors:
A. Hallal,
H. X. Yang,
B. Dieny,
M. Chshiev
Abstract:
Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy value. It is demonstrated that the origin of the large PMA values is far beyond simply considering the hybridization between Fe-3d…
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Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy value. It is demonstrated that the origin of the large PMA values is far beyond simply considering the hybridization between Fe-3d$ and O-2p orbitals at the interface between the metal and the insulator. On-site projected analysis show that the anisotropy energy is not localized at the interface but it rather propagates into the bulk showing an attenuating oscillatory behavior which depends on orbital character of contributing states and interfacial conditions. Furthermore, it is found in most situations that states with $d_{yz(xz)}$ and $d_{z^2}$ character tend always to maintain the PMA while those with $d_{xy}$ and $d_{x^2-y^2}$ character tend to favor the in-plane anisotropy. It is also found that while MgO thickness has no influence on PMA, the calculated perpendicular magnetic anisotropy oscillates as a function of Fe thickness with a period of 2ML and reaches a maximum value of 3.6 mJ/m$^2$.
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Submitted 13 August, 2013;
originally announced August 2013.
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Magnetic Insulator-Induced Proximity Effects in Graphene: Spin Filtering and Exchange Splitting Gaps
Authors:
H. -X. Yang,
A. Hallal,
D. Terrade,
X. Waintal,
S. Roche,
M. Chshiev
Abstract:
We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (Europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene $π$ orbitals by up to 24 %, together with large exchange splitting bandgap of about 36 meV. The position of the Dirac cone is further shown to depend strongly on…
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We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (Europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene $π$ orbitals by up to 24 %, together with large exchange splitting bandgap of about 36 meV. The position of the Dirac cone is further shown to depend strongly on the graphene-EuO interlayer. These findings point towards the possible engineering of spin gating by proximity effect at relatively high temperature, which stands as a hallmark for future all-spin information processing technologies.
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Submitted 27 November, 2012;
originally announced November 2012.
