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Detecting slow magnetization relaxation via magnetotransport measurements based on the current-reversal method
Authors:
Sebastian Beckert,
Richard Schlitz,
Gregor Skobjin,
Antonin Badura,
Miina Leiviskä,
Dominik Kriegner,
Daniel Scheffler,
Giacomo Sala,
Kamil Olejník,
Lisa Michez,
Vincent Baltz,
Andy Thomas,
Helena Reichlová,
Sebastian T. B. Goennenwein
Abstract:
Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model sy…
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Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model system, and then explore relaxation in τ -MnAl films. Compared to magnetotransport experiments based on ac lock-in techniques, we find that the dc current-reversal method is particulary sensitive to relaxation processes with relaxation time scales on the order of seconds, comparable to the current-reversal measurement time scales.
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Submitted 23 May, 2024;
originally announced May 2024.
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Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3
Authors:
Antonin Badura,
Warlley H. Campos,
Venkata K. Bharadwaj,
Ismaïla Kounta,
Lisa Michez,
Matthieu Petit,
Javier Rial,
Miina Leiviskä,
Vincent Baltz,
Filip Krizek,
Dominik Kriegner,
Jan Zemen,
Sjoerd Telkamp,
Sebastian Sailler,
Michaela Lammel,
Rodrigo Jaeschke Ubiergo,
Anna Birk Hellenes,
Rafael González-Hernández,
Jairo Sinova,
Tomáš Jungwirth,
Sebastian T. B. Goennenwein,
Libor Šmejkal,
Helena Reichlova
Abstract:
The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the…
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The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the presence of the anomalous Nernst effect possible despite the collinear spin arrangement. In this work, we investigate epitaxial Mn5Si3 thin films known to be an altermagnetic candidate. We show that the material manifests a sizable anomalous Nernst coefficient despite the small net magnetization of the films. The measured magnitudes of the anomalous Nernst coefficient reach a scale of microVolts per Kelvin. We support our magneto-thermoelectric measurements by density-functional theory calculations of the material's spin-split electronic structure, which allows for the finite Berry curvature in the reciprocal space. Furthermore, we present our calculations of the intrinsic Berry-curvature Nernst conductivity, which agree with our experimental observations.
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Submitted 19 March, 2024;
originally announced March 2024.
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Anisotropy of the anomalous Hall effect in the altermagnet candidate Mn$_5$Si$_3$ films
Authors:
Miina Leiviskä,
Javier Rial,
Antonín Badura,
Rafael Lopes Seeger,
Ismaïla Kounta,
Sebastian Beckert,
Dominik Kriegner,
Isabelle Joumard,
Eva Schmoranzerová,
Jairo Sinova,
Olena Gomonay,
Andy Thomas,
Sebastian T. B. Goennenwein,
Helena Reichlová,
Libor Šmejkal,
Lisa Michez,
Tomáš Jungwirth,
Vincent Baltz
Abstract:
Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rota…
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Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative Néel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the Néel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material.
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Submitted 4 January, 2024;
originally announced January 2024.
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Even-in-magnetic-field part of transverse resistivity as a probe of magnetic order
Authors:
Antonin Badura,
Dominik Kriegner,
Eva Schmoranzerová,
Karel Výborný,
Miina Leiviskä,
Rafael Lopes Seeger,
Vincent Baltz,
Daniel Scheffler,
Sebastian Beckert,
Ismaila Kounta,
Lisa Michez,
Libor Šmejkal,
Jairo Sinova,
Sebastian T. B. Goennenwein,
Jakub Železný,
Helena Reichlová
Abstract:
The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effec…
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The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is typically ascribed to experimental artefacts and ignored. We here show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρ_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner-Wohlfarth modelling. We then apply our approach to magnetotransport measurements in $\rm Mn_5Si_3$ thin films with a complex compensated magnetic order. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$ K and thus offers a simple and readily available probe of the magnetic order.
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Submitted 24 November, 2023;
originally announced November 2023.
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Local setting of spin textures in a granular antiferromagnet
Authors:
Miina Leiviskä,
Sarah Jenkins,
Richard F. L. Evans,
Daria Gusakova,
Vincent Baltz
Abstract:
Controlling the magnetic order of antiferromagnets is challenging due to their vanishing net magnetization. For this reason, the study of local spin textures in antiferromagnets is restricted by the difficulty in nucleating such states. Here, using atomistic simulations we demonstrate a method for nucleating localized spin textures in the grains of thin film antiferromagnet, $γ$-IrMn$_3$. Utilisin…
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Controlling the magnetic order of antiferromagnets is challenging due to their vanishing net magnetization. For this reason, the study of local spin textures in antiferromagnets is restricted by the difficulty in nucleating such states. Here, using atomistic simulations we demonstrate a method for nucleating localized spin textures in the grains of thin film antiferromagnet, $γ$-IrMn$_3$. Utilising the exchange bias coupling between a ferromagnet and an antiferromagnet, we set the spin texture in the latter from a predefined spin texture in the former by means of a thermal cycling procedure. The local textures set in the antiferromagnetic grains are shown to be stable against field perturbations. We also discuss how various material parameters affect the efficiency of the setting and the characteristics of these set textures. The setting of antiferromagnetic spin textures provides a potential route to antiferromagnetic spintronic devices with non-collinear spin states such as skyrmions, bubbles and domain walls.
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Submitted 9 November, 2023; v1 submitted 17 February, 2023;
originally announced February 2023.
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Anisotropic long-range spin transport in canted antiferromagnetic orthoferrite YFeO$_3$
Authors:
Shubhankar Das,
A. Ross,
X. X. Ma,
S. Becker,
C. Schmitt,
F. van Duijn,
F. Fuhrmann,
M. -A. Syskaki,
U. Ebels,
V. Baltz,
A. -L. Barra,
H. Y. Chen,
G. Jakob,
S. X. Cao,
J. Sinova,
O. Gomonay,
R. Lebrun,
M. Kläui
Abstract:
In antiferromagnets, the efficient propagation of spin-waves has until now only been observed in the insulating antiferromagnet hematite, where circularly (or a superposition of pairs of linearly) polarized spin-waves propagate over long distances. Here, we report long-distance spin-transport in the antiferromagnetic orthoferrite YFeO$_3$, where a different transport mechanism is enabled by the co…
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In antiferromagnets, the efficient propagation of spin-waves has until now only been observed in the insulating antiferromagnet hematite, where circularly (or a superposition of pairs of linearly) polarized spin-waves propagate over long distances. Here, we report long-distance spin-transport in the antiferromagnetic orthoferrite YFeO$_3$, where a different transport mechanism is enabled by the combined presence of the Dzyaloshinskii-Moriya interaction and externally applied fields. The magnon decay length is shown to exceed hundreds of nano-meters, in line with resonance measurements that highlight the low magnetic damping. We observe a strong anisotropy in the magnon decay lengths that we can attribute to the role of the magnon group velocity in the propagation of spin-waves in antiferromagnets. This unique mode of transport identified in YFeO$_3$ opens up the possibility of a large and technologically relevant class of materials, i.e., canted antiferromagnets, for long-distance spin transport.
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Submitted 11 December, 2021;
originally announced December 2021.
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Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMn
Authors:
Oliver Gueckstock,
Rafael L. Seeger,
Tom S. Seifert,
Stephane Auffret,
Serge Gambarelli,
Jan N. Kirchhof,
Kirill I. Bolotin,
Vincent Baltz,
Tobias Kampfrath,
Lukáš Nádvorník
Abstract:
Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pumping and THz spectroscopy tech…
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Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pumping and THz spectroscopy techniques. We reveal a factor of 4 shorter characteristic propagation lengths of the spin current at THz frequencies (~ 0.5 nm) as compared to the GHz regime (~ 2 nm) which may be attributed to the ballistic and diffusive nature of electronic spin transport, respectively. The conclusion is supported by an extraction of sub-picosecond temporal dynamics of the THz spin current. We also report on a significant impact of the S2C originating from the IrMn/non-magnetic metal interface which is much more pronounced in the THz regime and opens the door for optimization of the spin control at ultrafast time scales.
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Submitted 12 February, 2022; v1 submitted 7 November, 2021;
originally announced November 2021.
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Penetration depth of Cooper pairs in the IrMn antiferromagnet
Authors:
R. L. Seeger,
G. Forestier,
O. Gladii,
M. Leiviskä,
S. Auffret,
I. Joumard,
C. Gomez,
M. Rubio-Roy,
A. I. Buzdin,
M. Houzet,
V. Baltz
Abstract:
Suppression of superconductivity due to the proximity effect between a superconductor and a ferromagnet can be partially alleviated when a Cooper pair simultaneously samples different directions of the short-range exchange field. The superconductor's critical temperature, TC, is therefore expected to partially recover when the ferromagnet is in a multi-domain state, as opposed to a single-domain s…
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Suppression of superconductivity due to the proximity effect between a superconductor and a ferromagnet can be partially alleviated when a Cooper pair simultaneously samples different directions of the short-range exchange field. The superconductor's critical temperature, TC, is therefore expected to partially recover when the ferromagnet is in a multi-domain state, as opposed to a single-domain state. Here, we discuss series of experiments performed with ferromagnet(Pt/Co)/spacer(IrMn and Pt)/superconductor(NbN) heterostructures. By tuning the various parameters in play, e.g., superconducting coherence length-to-thicknesses ratio, and domain sizes, we obtained up to 10 percent recovery of the superconducting critical temperature ΔTC/TC. This large-scale recovery made novel investigations possible. In particular, from the spacer thickness-dependence of ΔTC/TC, it was possible to deduce the characteristic length for Cooper pair penetration in an IrMn antiferromagnet. This information is crucial for electronic transport, and up to now has been difficult to access experimentally for antiferromagnets.
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Submitted 5 February, 2021;
originally announced February 2021.
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Macroscopic time reversal symmetry breaking by staggered spin-momentum interaction
Authors:
Helena Reichlová,
Rafael Lopes Seeger,
Rafael González-Hernández,
Ismaila Kounta,
Richard Schlitz,
Dominik Kriegner,
Philipp Ritzinger,
Michaela Lammel,
Miina Leiviskä,
Václav Petříček,
Petr Doležal,
Eva Schmoranzerová,
Antonín Bad'ura,
Andy Thomas,
Vincent Baltz,
Lisa Michez,
Jairo Sinova,
Sebastian T. B. Goennenwein,
Tomáš Jungwirth,
Libor Šmejkal
Abstract:
Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Aniso…
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Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Anisotropic electron interactions, on the other hand, have been a domain of correlated quantum phases, such as the T-invariant nematics or unconventional superconductors. Here we report discovery of a broken-T phase of itinerant Bloch electrons with an unconventional anisotropic spin-momentum interaction, whose staggered nature leads to the formation of two ferromagnetic-like valleys in the momentum space with opposite spin splittings. We describe qualitatively the effect by deriving a non-relativistic single-particle Hamiltonian model. Next, we identify the unconventional staggered spin-momentum interaction by first-principles electronic structure calculations in a four-sublattice antiferromagnet Mn5Si3 with a collinear checkerboard magnetic order. We show that the staggered spin-momentum interaction is set by nonrelativistic spin-symmetries which were previously omitted in relativistic physics classifications of spin interactions and topological quasiparticles. Our measurements of a spontaneous Hall effect in epilayers of antiferromagnetic Mn5Si3 with vanishing magnetization are consistent with our theory predictions. Bloch electrons with the unconventional staggered spin interaction, compatible with abundant low atomic-number materials, strong spin-coherence, and collinear antiferromagnetic order open unparalleled possibilities for realizing T-symmetry broken spin and topological quantum phases.
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Submitted 20 March, 2021; v1 submitted 31 December, 2020;
originally announced December 2020.
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Imprint from ferromagnetic skyrmions in an antiferromagnet via exchange bias
Authors:
Kumari Gaurav Rana,
Rafael Lopes Seeger,
Sandra Ruiz-Gómez,
Roméo Juge,
Qiang Zhang,
Kaushik Bairagi,
Van Tuong Pham,
Mohamed Belmeguenai,
Stéphane Auffret,
Michael Foerster,
Lucia Aballe,
Gilles Gaudin,
Vincent Baltz,
Olivier Boulle
Abstract:
Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size, and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is still lacking. Here, we show the imprint from ferromagnetic skyrmions into a t…
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Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size, and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is still lacking. Here, we show the imprint from ferromagnetic skyrmions into a thin film of an IrMn antiferromagnet, at room temperature and zero external magnetic field, using exchange-bias. Using high-spatial-resolution x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM), we observed the imprinted spin textures within the IrMn from the XMCD signal of the uncompensated Mn spins at the interface with the ferromagnet. This result opens up a path for logic and memory devices based on skyrmion manipulation in antiferromagnets.
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Submitted 24 November, 2021; v1 submitted 30 September, 2020;
originally announced September 2020.
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Long-distance spin-transport across the Morin phase transition up to room temperature in ultra-low damping single crystals of the antiferromagnet α-Fe2O3
Authors:
Romain Lebrun,
Andrew Ross,
Olena Gomonay,
Vincent Baltz,
Ursula Ebels,
Anne Laure Barra,
Alireza Qaiumzadeh,
Arne Brataas,
Jairo Sinova,
Mathias Kläui
Abstract:
Antiferromagnetic materials can host spin-waves with polarizations ranging from circular to linear depending on their magnetic anisotropies. Until now, only easy-axis anisotropy antiferromagnets with circularly polarized spin-waves were reported to carry spin-information over long distances of micrometers. In this article, we report long-distance spin-transport in the easy-plane canted antiferroma…
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Antiferromagnetic materials can host spin-waves with polarizations ranging from circular to linear depending on their magnetic anisotropies. Until now, only easy-axis anisotropy antiferromagnets with circularly polarized spin-waves were reported to carry spin-information over long distances of micrometers. In this article, we report long-distance spin-transport in the easy-plane canted antiferromagnetic phase of hematite and at room temperature, where the linearly polarized magnons are not intuitively expected to carry spin. We demonstrate that the spin-transport signal decreases continuously through the easy-axis to easy-plane Morin transition, and persists in the easy-plane phase through current induced pairs of linearly polarized magnons with dephasing lengths in the micrometer range. We explain the long transport distance as a result of the low magnetic damping, which we measure to be below 0.0001 as in the best ferromagnets. All of this together demonstrates that long-distance transport can be achieved across a range of anisotropies and temperatures, up to room temperature, highlighting the promising potential of this insulating antiferromagnet for magnon-based devices.
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Submitted 28 April, 2021; v1 submitted 29 May, 2020;
originally announced May 2020.
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Independence of the inverse spin Hall effect with the magnetic phase in thin NiCu films
Authors:
Sara Varotto,
Maxen Cosset-Cheneau,
Cécile Grezes,
Yu Fu,
Patrick Warin,
Ariel Brenac,
Jean-François Jacquot,
Serge Gambarelli,
Christian Rinaldi,
Vincent Baltz,
Jean-Philippe Attané,
Laurent Vila,
Paul Noël
Abstract:
Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pumping experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it…
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Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pumping experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it is insensitive to the magnetic order. These results points towards a Heisenberg localized model of the transition, and suggest that the large spin Hall effects in 3d ferromagnets can be independent of the magnetic phase.
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Submitted 16 May, 2020;
originally announced May 2020.
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Self-induced inverse spin Hall effect in ferromagnets: demonstration through non-monotonous temperature-dependence in permalloy
Authors:
O. Gladii,
L. Frangou,
A. Hallal,
R. L. Seeger,
P. Noel,
G. Forestier,
S. Auffret,
M. Rubio-Roy,
P. Warin,
L. Vila,
S. Wimmer,
H. Ebert,
S. Gambarelli,
M. Chshiev,
V. Baltz
Abstract:
We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pumping experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew…
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We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pumping experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew scattering, side-jump, and intrinsic contributions to the T-dependent spin Hall conductivity. Experimental data were similar whatever the material in contact with permalloy (oxides or metals), and revealed an increase of produced current with t, demonstrating a bulk origin of the effect.
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Submitted 3 September, 2019;
originally announced September 2019.
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Stacking order-dependent sign-change of microwave phase due to eddy currents in nanometer-scale NiFe/Cu heterostructures
Authors:
O. Gladii,
R. L. Seeger,
L. Frangou,
G. Forestier,
U. Ebels,
S. Auffret,
V. Baltz
Abstract:
In the field of spintronics, ferromagnetic/non-magnetic metallic multilayers are core building blocks for emerging technologies. Resonance experiments using stripline transducers are commonly used to characterize and engineer these stacks for applications. Up to now in these experiments, the influence of eddy currents on the excitation of the dynamics of ferromagnetic magnetization below the skin-…
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In the field of spintronics, ferromagnetic/non-magnetic metallic multilayers are core building blocks for emerging technologies. Resonance experiments using stripline transducers are commonly used to characterize and engineer these stacks for applications. Up to now in these experiments, the influence of eddy currents on the excitation of the dynamics of ferromagnetic magnetization below the skin-depth limit was most often neglected. Here, using a coplanar stripline transducer, we experimentally investigated the broadband ferromagnetic resonance response of NiFe/Cu bilayers a few nanometers thick in the sub-skin-depth regime. Asymmetry in the absorption spectrum gradually built up as the excitation frequency and Cu-layer thickness increased. Most significantly, the sign of the asymmetry depended on the stacking order. Experimental data were consistent with a quantitative analysis considering eddy currents generated in the Cu layers and the subsequent phaseshift of the feedback magnetic field generated by the eddy currents. These results extend our understanding of the impact of eddy currents below the microwave magnetic skin-depth and explain the lineshape asymmetry and phase lags reported in stripline experiments.
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Submitted 18 July, 2019; v1 submitted 18 February, 2019;
originally announced February 2019.
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Spin pumping as a generic probe for linear spin fluctuations: demonstration with ferromagnetic and antiferromagnetic orders, metallic and insulating electrical states
Authors:
O. Gladii,
L. Frangou,
G. Forestier,
R. L. Seeger,
S. Auffret,
M. Rubio-Roy,
R. Weil,
A. Mougin,
C. Gomez,
W. Jahjah,
J. -P. Jay,
D. Dekadjevi,
D. Spenato,
S. Gambarelli,
V. Baltz
Abstract:
We investigated spin injection by spin pumping from a spin-injector(NiFe) into a spin-sink to detect spin fluctuations in the spin-sink. By scanning the ordering-temperature of several magnetic transitions, we found that enhanced spin pumping due to spin fluctuations applies with several ordering states: ferromagnetic(Tb) and antiferromagnetic(NiO, NiFeOx, BiFeO3, exchange-biased and unbiased IrMn…
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We investigated spin injection by spin pumping from a spin-injector(NiFe) into a spin-sink to detect spin fluctuations in the spin-sink. By scanning the ordering-temperature of several magnetic transitions, we found that enhanced spin pumping due to spin fluctuations applies with several ordering states: ferromagnetic(Tb) and antiferromagnetic(NiO, NiFeOx, BiFeO3, exchange-biased and unbiased IrMn). Results also represent systematic experimental investigation supporting that the effect is independent of the metallic and insulating nature of the spin-sink, and is observed whether the spin current probe involves electronic or magnonic transport, facilitating advances in material characterization and engineering for spintronic applications.
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Submitted 11 January, 2019;
originally announced January 2019.
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Unraveling the influence of electronic and magnonic spin current injection near the magnetic ordering transition of IrMn metallic antiferromagnets
Authors:
O. Gladii,
L. Frangou,
G. Forestier,
R. L. Seeger,
S. Auffret,
I. Joumard,
M. Rubio-Roy,
S. Gambarelli,
V. Baltz
Abstract:
Although spin injection at room temperature in an IrMn metallic antiferromagnet strongly depends on the transport regime, and is more efficient in the case of magnonic transport, in this article, we present experimental data demonstrating that the enhanced efficiency of spin injection caused by spin fluctuations near the ordering temperature can be as efficient for the electronic and magnonic tran…
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Although spin injection at room temperature in an IrMn metallic antiferromagnet strongly depends on the transport regime, and is more efficient in the case of magnonic transport, in this article, we present experimental data demonstrating that the enhanced efficiency of spin injection caused by spin fluctuations near the ordering temperature can be as efficient for the electronic and magnonic transport regimes. By selecting representative interacting environments, we also demonstrated that the amplification of spin injection near the ordering temperature of the IrMn antiferromagnet is independent of exchange coupling with an adjacent NiFe ferromagnet. In addition, our findings confirm that the spin current carried by magnons penetrates deeper than that transported by conduction electrons in IrMn. Finally, our data indicates that the value of the ordering temperature for the IrMn antiferromagnet is not significantly affected by either the electronic or magnonic nature of the spin current probe, or by exchange coupling.
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Submitted 17 September, 2018;
originally announced September 2018.
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Part of a collection of reviews on antiferromagnetic spintronics. Antiferromagnetic dynamics, spin-texures, and nanostructures
Authors:
Olena Gomonay,
Vincent Baltz,
Arne Brataas,
Yaroslav Tserkovnyak
Abstract:
Antiferromagnets as active elements of spintronics can be faster than their ferromagnetic counterparts and more robust to magnetic noise. Owing to the strongly exchange-coupled magnetic sublattice structure, antiferromagnetic order parameter dynamics are qualitatively different and thus capable of engendering novel device functionalities. In this review, we discuss antiferromagnetic textures -- na…
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Antiferromagnets as active elements of spintronics can be faster than their ferromagnetic counterparts and more robust to magnetic noise. Owing to the strongly exchange-coupled magnetic sublattice structure, antiferromagnetic order parameter dynamics are qualitatively different and thus capable of engendering novel device functionalities. In this review, we discuss antiferromagnetic textures -- nanoparticles, domain walls, and skyrmions, -- under the action of different spin torques. We contrast the antiferromagnetic and ferromagnetic dynamics, with a focus on the features that can be relevant for applications.
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Submitted 29 May, 2017;
originally announced May 2017.
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Reconfigurable magnetic domain wall pinning at the nano-scale using vortex-generated magnetic fields
Authors:
Aaron C. H. Hurst,
Joshua A. Izaac,
Fouzia Altaf,
Vincent Baltz,
Peter J. Metaxas
Abstract:
We demonstrate that the stray magnetic field generated beneath magnetic vortex cores can be used to generate nano-scale, localized pinning sites for magnetic domain walls in an underlying, perpendicularly magnetized nanostrip. Moreover, the pinning strength can be tuned by toggling the vortex core polarity. Indeed, switching the core polarity so that it is aligned with the magnetization of the exp…
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We demonstrate that the stray magnetic field generated beneath magnetic vortex cores can be used to generate nano-scale, localized pinning sites for magnetic domain walls in an underlying, perpendicularly magnetized nanostrip. Moreover, the pinning strength can be tuned by toggling the vortex core polarity. Indeed, switching the core polarity so that it is aligned with the magnetization of the expanding domain (rather than against it) can be used to reduce the vortex-mediated wall depinning field by between 40% and 90%, depending on the system geometry. Significant reductions in the depinning field can also be obtained in narrow strips by shifting the core away from the strip's center.
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Submitted 8 February, 2017;
originally announced February 2017.
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Relaxation mechanism driven by spin angular momentum absorption throughout antiferromagnetic phase transition in NiFe surface oxides
Authors:
L. Frangou,
G. Forestier,
S. Auffret,
S. Gambarelli,
V. Baltz
Abstract:
We report an alternative mechanism for the physical origin of the temperature-dependent ferromagnetic relaxation of Permalloy (NiFe) thin films. Through spin-pumping experiments, we demonstrate that the peak in the temperature-dependence of NiFe damping can be understood in terms of enhanced spin angular momentum absorption at the magnetic phase transition in antiferromagnetic surface-oxidized lay…
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We report an alternative mechanism for the physical origin of the temperature-dependent ferromagnetic relaxation of Permalloy (NiFe) thin films. Through spin-pumping experiments, we demonstrate that the peak in the temperature-dependence of NiFe damping can be understood in terms of enhanced spin angular momentum absorption at the magnetic phase transition in antiferromagnetic surface-oxidized layers. These results suggest new avenues for the investigation of an incompletely-understood phenomenon in physics.
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Submitted 16 December, 2016;
originally announced December 2016.
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Antiferromagnetic spintronics
Authors:
V. Baltz,
A. Manchon,
M. Tsoi,
T. Moriyama,
T. Ono,
Y. Tserkovnyak
Abstract:
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects. Intense research efforts over the past decade have been invested in unraveling spin…
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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer, and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research.
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Submitted 3 May, 2017; v1 submitted 14 June, 2016;
originally announced June 2016.
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Enhanced spin pumping efficiency in antiferromagnetic IrMn thin films around the magnetic phase transition
Authors:
Lamprini Frangou,
Simon Oyarzun,
Stephane Auffret,
Laurent Vila,
Serge Gambarelli,
Vincent Baltz
Abstract:
We report measurement of a spin pumping effect due to fluctuations of the magnetic order of IrMn thin films. A precessing NiFe ferromagnet injected spins into IrMn spin sinks, and enhanced damping was observed around the IrMn magnetic phase transition. Our data was compared to a recently developed theory and converted into interfacial spin mixing conductance enhancements. By spotting the spin pump…
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We report measurement of a spin pumping effect due to fluctuations of the magnetic order of IrMn thin films. A precessing NiFe ferromagnet injected spins into IrMn spin sinks, and enhanced damping was observed around the IrMn magnetic phase transition. Our data was compared to a recently developed theory and converted into interfacial spin mixing conductance enhancements. By spotting the spin pumping peak, the thickness dependence of the IrMn critical temperature could be determined and the characteristic length for the spin-spin interactions was deduced.
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Submitted 7 January, 2016; v1 submitted 11 September, 2015;
originally announced September 2015.
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Spatially periodic domain wall pinning potentials: Asymmetric pinning and dipolar biasing
Authors:
P. J. Metaxas,
P. -J. Zermatten,
R. L. Novak,
S. Rohart,
J. -P. Jamet,
R. Weil,
J. Ferré,
A. Mougin,
R. L. Stamps,
G. Gaudin,
V. Baltz,
B. Rodmacq
Abstract:
Domain wall propagation has been measured in continuous, weakly disordered, quasi-two-dimensional, Ising-like magnetic layers that are subject to spatially periodic domain wall pinning potentials. The potentials are generated non-destructively using the stray magnetic field of ordered arrays of magnetically hard [Co/Pt]$_m$ nanoplatelets which are patterned above and are physically separated from…
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Domain wall propagation has been measured in continuous, weakly disordered, quasi-two-dimensional, Ising-like magnetic layers that are subject to spatially periodic domain wall pinning potentials. The potentials are generated non-destructively using the stray magnetic field of ordered arrays of magnetically hard [Co/Pt]$_m$ nanoplatelets which are patterned above and are physically separated from the continuous magnetic layer. The effect of the periodic pinning potentials on thermally activated domain wall creep dynamics is shown to be equivalent, at first approximation, to that of a uniform, effective retardation field, $H_{ret}$, which acts against the applied field, $H$. We show that $H_{ret}$ depends not only on the array geometry but also on the relative orientation of $H$ and the magnetization of the nanoplatelets. A result of the latter dependence is that wall-mediated hysteresis loops obtained for a set nanoplatelet magnetization exhibit many properties that are normally associated with ferromagnet/antiferromagnet exchange bias systems. These include a switchable bias, coercivity enhancement and domain wall roughness that is dependent on the applied field polarity.
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Submitted 28 April, 2013;
originally announced April 2013.
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Electrical and thermal spin accumulation in germanium
Authors:
A. Jain,
C. Vergnaud,
J. Peiro,
J. C. Le Breton,
E. Prestat,
L. Louahadj,
C. Portemont,
C. Ducruet,
V. Baltz,
A. Marty,
A. Barski,
P. Bayle-Guillemaud,
L. Vila,
J. -P. Attané,
E. Augendre,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germa…
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In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel.
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Submitted 19 April, 2012;
originally announced April 2012.
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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
Authors:
A. Jain,
J. -C. Rojas-Sanchez,
M. Cubukcu,
J. Peiro,
J. C. Le Breton,
E. Prestat,
C. Vergnaud,
L. Louahadj,
C. Portemont,
C. Ducruet,
V. Baltz,
A. Barski,
P. Bayle-Guillemaud,
L. Vila,
J. -P. Attané,
E. Augendre,
G. Desfonds,
S. Gambarelli,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states…
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Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.
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Submitted 5 January, 2013; v1 submitted 29 March, 2012;
originally announced March 2012.
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Electrical spin injection and detection in Germanium using three terminal geometry
Authors:
A. Jain,
L. Louahadj,
J. Peiro,
J. C. Le Breton,
C. Vergnaud,
A. Barski,
C. Beigné,
L. Notin,
A. Marty,
V. Baltz,
S. Auffret,
E. Augendre,
H. Jaffrès,
J. M. George,
M. Jamet
Abstract:
In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interfa…
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In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.
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Submitted 18 July, 2011;
originally announced July 2011.
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Dynamic binding of driven interfaces in coupled ultrathin ferromagnetic layers
Authors:
P. J. Metaxas,
R. L. Stamps,
J. P. Jamet,
J. Ferré,
V. Baltz,
B. Rodmacq,
P. Politi
Abstract:
We demonstrate experimentally dynamic interface binding in a system consisting of two coupled ferromagnetic layers. While domain walls in each layer have different velocity-field responses, for two broad ranges of the driving field, H, walls in the two layers are bound and move at a common velocity. The bound states have their own velocity-field response and arise when the isolated wall velocitie…
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We demonstrate experimentally dynamic interface binding in a system consisting of two coupled ferromagnetic layers. While domain walls in each layer have different velocity-field responses, for two broad ranges of the driving field, H, walls in the two layers are bound and move at a common velocity. The bound states have their own velocity-field response and arise when the isolated wall velocities in each layer are close, a condition which always occurs as H->0. Several features of the bound states are reproduced using a one dimensional model, illustrating their general nature.
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Submitted 12 May, 2010;
originally announced May 2010.
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Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport
Authors:
Matthieu Jamet,
Ing-Song Yu,
Thibaut Devillers,
André Barski,
Pascale Bayle-Guillemaud,
Cyrille Beigne,
Johan Rothman,
Vincent Baltz,
Joel Cibert
Abstract:
Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport properties. We obtained p-type layers with nanocolumns, either parallel or entangled, and n-type layers with spherical clusters. Holes exhibit an anomalous Hall…
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Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport properties. We obtained p-type layers with nanocolumns, either parallel or entangled, and n-type layers with spherical clusters. Holes exhibit an anomalous Hall effect, and electrons exhibit a tunneling magnetoresistance, both with a clear dependence on the magnetization of the Mn-rich inclusions; holes exhibit orbital MR, and electrons show only the normal Hall effect, and an additional component of magnetoresistance due to weak localization, all three being independent of the magnetic state of the Mn rich inclusions. Identified mechanisms point to the position of the Fermi level of the Mn-rich material with respect to the valence band of germanium as a crucial parameter in such hybrid layers.
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Submitted 28 October, 2009;
originally announced October 2009.
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Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt
Authors:
K. M. Seemann,
V. Baltz,
M. MacKenzie,
J. N. Chapman,
B. J. Hickey,
C. H. Marrows
Abstract:
We report on the structural, magnetic, and electron transport properties of a L1o-ordered epitaxial iron-platinum alloy layer fabricated by magnetron-sputtering on a MgO(001) substrate. The film studied displayed a long range chemical order parameter of S~0.90, and hence has a very strong perpendicular magnetic anisotropy. In the diffusive electron transport regime, for temperatures ranging from…
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We report on the structural, magnetic, and electron transport properties of a L1o-ordered epitaxial iron-platinum alloy layer fabricated by magnetron-sputtering on a MgO(001) substrate. The film studied displayed a long range chemical order parameter of S~0.90, and hence has a very strong perpendicular magnetic anisotropy. In the diffusive electron transport regime, for temperatures ranging from 2 K to 258 K, we found hysteresis in the magnetoresistance mainly due to electron scattering from magnetic domain walls. At 2 K, we observed an overall domain wall magnetoresistance of about 0.5 %. By evaluating the spin current asymmetry alpha = sigma_up / sigma_down, we were able to estimate the diffusive spin current polarization. At all temperatures ranging from 2 K to 258 K, we found a diffusive spin current polarization of > 80%. To study the ballistic transport regime, we have performed point-contact Andreev-reflection measurements at 4.2 K. We obtained a value for the ballistic current spin polarization of ~42% (which compares very well with that of a polycrystalline thin film of elemental Fe). We attribute the discrepancy to a difference in the characteristic scattering times for oppositely spin-polarized electrons, such scattering times influencing the diffusive but not the ballistic current spin polarization.
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Submitted 19 July, 2007;
originally announced July 2007.
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Creep and flow regimes of magnetic domain wall motion in ultrathin Pt/Co/Pt films with perpendicular anisotropy
Authors:
P. J. Metaxas,
J. P. Jamet,
A. Mougin,
M. Cormier,
J. Ferre,
V. Baltz,
B. Rodmacq,
B. Dieny,
R. L. Stamps
Abstract:
We report on magnetic domain wall velocity measurements in ultrathin Pt/Co(0.5-0.8 nm)/Pt films with perpendicular anisotropy over a large range of applied magnetic fields. The complete velocity-field characteristics are obtained, enabling an examination of the transition between thermally activated creep and viscous flow: motion regimes predicted from general theories for driven elastic interfa…
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We report on magnetic domain wall velocity measurements in ultrathin Pt/Co(0.5-0.8 nm)/Pt films with perpendicular anisotropy over a large range of applied magnetic fields. The complete velocity-field characteristics are obtained, enabling an examination of the transition between thermally activated creep and viscous flow: motion regimes predicted from general theories for driven elastic interfaces in weakly disordered media. The dissipation limited flow regime is found to be consistent with precessional domain wall motion, analysis of which yields values for the damping parameter, $α$.
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Submitted 13 December, 2007; v1 submitted 27 February, 2007;
originally announced February 2007.
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Magnetic domain structure and dynamics in interacting ferromagnetic stacks with perpendicular anisotropy
Authors:
S. Wiebel,
J. P. Jamet,
N. Vernier,
A. Mougin,
J. Ferre,
V. Baltz,
B. Rodmacq,
B. Dieny
Abstract:
The time and field dependence of the magnetic domain structure at magnetization reversal were investigated by Kerr microscopy in interacting ferromagnetic Co/Pt multilayers with perpendicular anisotropy. Large local inhomogeneous magnetostatic fields favor mirroring domain structures and domain decoration by rings of opposite magnetization. The long range nature of these magnetostatic interactio…
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The time and field dependence of the magnetic domain structure at magnetization reversal were investigated by Kerr microscopy in interacting ferromagnetic Co/Pt multilayers with perpendicular anisotropy. Large local inhomogeneous magnetostatic fields favor mirroring domain structures and domain decoration by rings of opposite magnetization. The long range nature of these magnetostatic interactions gives rise to ultra-slow dynamics even in zero applied field, i.e. it affects the long time domain stability. Due to this additionnal interaction field, the magnetization reversal under short magnetic field pulses differs markedly from the well-known slow dynamic behavior. Namely, in high field, the magnetization of the coupled harder layer has been observed to reverse more rapidly by domain wall motion than the softer layer alone.
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Submitted 18 January, 2006;
originally announced January 2006.
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Fine structure of excited excitonic states in quantum disks
Authors:
M. M. Glazov,
E. L. Ivchenko,
R. v. Baltz,
E. G. Tsitsishvili
Abstract:
We report on a theoretical study of the fine structure of excited excitonic levels in semiconductor quantum disks. A particular attention is paid to the effect of electron-hole long-range exchange interaction. We demonstrate that, even in the axisymmetric quantum disks, the exciton P-shell is split into three sublevels. The analytical results are obtained in the limiting cases of strong and weak…
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We report on a theoretical study of the fine structure of excited excitonic levels in semiconductor quantum disks. A particular attention is paid to the effect of electron-hole long-range exchange interaction. We demonstrate that, even in the axisymmetric quantum disks, the exciton P-shell is split into three sublevels. The analytical results are obtained in the limiting cases of strong and weak confinement. A possibility of exciton spin relaxation due to the resonant LO-phonon-assisted coupling between the P and S shells is discussed.
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Submitted 26 January, 2005;
originally announced January 2005.
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Exciton spin relaxation in single semiconductor quantum dots
Authors:
E. Tsitsishvili,
R. v. Baltz,
H. Kalt
Abstract:
We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation rates are found to depend strongly on the dot size, magnetic field and temperature. For typical quantum dots and temperatures below 100 K, the zero--magnetic f…
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We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation rates are found to depend strongly on the dot size, magnetic field and temperature. For typical quantum dots and temperatures below 100 K, the zero--magnetic field relaxation times are long compared to the exciton lifetime, yet they are strongly reduced in high magnetic fields. We discuss explicitly quantum dots based on (In,Ga)As and (Cd,Zn)Se semiconductor compounds.
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Submitted 23 April, 2003;
originally announced April 2003.
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Temperature dependence of polarization relaxation in semiconductor quantum dots
Authors:
E. Tsitsishvili,
R. v. Baltz,
H. Kalt
Abstract:
The decay time of the linear polarization degree of the luminescence in strongly confined semiconductor quantum dots with asymmetrical shape is calculated in the frame of second-order quasielastic interaction between quantum dot charge carriers and LO phonons. The phonon bottleneck does not prevent significantly the relaxation processes and the calculated decay times can be of the order of a few…
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The decay time of the linear polarization degree of the luminescence in strongly confined semiconductor quantum dots with asymmetrical shape is calculated in the frame of second-order quasielastic interaction between quantum dot charge carriers and LO phonons. The phonon bottleneck does not prevent significantly the relaxation processes and the calculated decay times can be of the order of a few tens picoseconds at temperature $T \simeq 100$K, consistent with recent experiments by Paillard et al. [Phys. Rev. Lett. {\bf86}, 1634 (2001)].
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Submitted 5 November, 2002; v1 submitted 12 June, 2002;
originally announced June 2002.
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Frequency Dependent Conductivity of the Fibonacci-Chain
Authors:
Dieter Walther,
Ralph v. Baltz
Abstract:
A real-space renormalization method for the frequency dependent conductivity of the periodic approximants of the Fibonacci chain is developed. This scheme is based on the known 2x2 transfer matrices and additional 5x5 matrices which allow an efficient numerical evaluation of the Kubo formula.
A real-space renormalization method for the frequency dependent conductivity of the periodic approximants of the Fibonacci chain is developed. This scheme is based on the known 2x2 transfer matrices and additional 5x5 matrices which allow an efficient numerical evaluation of the Kubo formula.
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Submitted 9 November, 2001;
originally announced November 2001.
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Optical absorption in semiconductor quantum dots: Nonlocal effects
Authors:
F. Thiele,
Ch. Fuchs,
R. v. Baltz
Abstract:
The optical absorption of a single spherical semiconductor quantum dot in an electrical field is studied taking into account the nonlocal coupling between the field of the light and the polarizability of the semiconductor. These nonlocal effects lead to a small size anf field dependent shift and broadening of the excitonic resonance which may be of interest in future high precision experiments.
The optical absorption of a single spherical semiconductor quantum dot in an electrical field is studied taking into account the nonlocal coupling between the field of the light and the polarizability of the semiconductor. These nonlocal effects lead to a small size anf field dependent shift and broadening of the excitonic resonance which may be of interest in future high precision experiments.
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Submitted 9 November, 2001; v1 submitted 19 October, 2000;
originally announced October 2000.
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Optical properties of quantum wires: Disorder-scattering in the Lloyd-model
Authors:
Christian Fuchs,
Ralph v. Baltz
Abstract:
The Lloyd model is extended to the exciton problem in quasi one-dimensional structures to study the interplay between the Coulomb attraction and disorder scattering. Within this model the averaging and resummation of the locator series can be performed analytically. As an application, the optical absorption in quantum box wires is investigated. Without electron-hole interaction, fluctuations in…
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The Lloyd model is extended to the exciton problem in quasi one-dimensional structures to study the interplay between the Coulomb attraction and disorder scattering. Within this model the averaging and resummation of the locator series can be performed analytically. As an application, the optical absorption in quantum box wires is investigated. Without electron-hole interaction, fluctuations in the well-width lead to an asymmetric broadening of the minibands with respect to the lower and upper band-edges.
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Submitted 25 September, 2000;
originally announced September 2000.
