Showing 1–15 of 15 results for author: Kirchhof, J N

Strain activation of localized states in WSe2

Authors: Oguzhan Yücel, Denis Yagodkin, Jan N. Kirchhof, Abhijeet Kumar, Adrian Dewambrechies, Sviatoslav Kovalchuk, Yufeng Yu, Kirill I. Bolotin

Abstract: We explore strain-activated emission centers formed by atomic force microscopy (AFM) indentation in monolayer \ce{WSe2} on a flexible polymer substrate. In the indented areas, we observe sharp new photoluminescence (PL) peaks characterized by sublinear power dependence in the spectral regions 1.62 $-$ 1.66 eV and 1.70 $-$ 1.73 eV. After low-temperature thermal annealing ($< 120$ $^{\circ}$C), \ce{… ▽ More We explore strain-activated emission centers formed by atomic force microscopy (AFM) indentation in monolayer \ce{WSe2} on a flexible polymer substrate. In the indented areas, we observe sharp new photoluminescence (PL) peaks characterized by sublinear power dependence in the spectral regions 1.62 $-$ 1.66 eV and 1.70 $-$ 1.73 eV. After low-temperature thermal annealing ($< 120$ $^{\circ}$C), \ce{WSe2} experiences strain relaxation, leading to a blue shift of the peaks' spectral position and their ultimate disappearance. Our analysis of peaks' position vs. strain allows drawing multiple conclusions regarding the nature of these emission centers. We elucidate the roles of excitonic confinement and hybridization between free excitons and defect-related states, a process activated by the level of strain. Overall, our approach suggests that the energy of localized emitters may be controlled via strain engineering. △ Less

Submitted 16 February, 2024; originally announced February 2024.

Strain fingerprinting of exciton valley character

Authors: Abhijeet Kumar, Denis Yagodkin, Roberto Rosati, Douglas J Bock, Christoph Schattauer, Sarah Tobisch, Joakim Hagel, Bianca Höfer, Jan N Kirchhof, Pablo Hernández López, Kenneth Burfeindt, Sebastian Heeg, Cornelius Gahl, Florian Libisch, Ermin Malic, Kirill I Bolotin

Abstract: Momentum-indirect excitons composed of electrons and holes in different valleys define optoelectronic properties of many semiconductors, but are challenging to detect due to their weak coupling to light. The identification of an excitons' valley character is further limited by complexities associated with momentum-selective probes. Here, we study the photoluminescence of indirect excitons in contr… ▽ More Momentum-indirect excitons composed of electrons and holes in different valleys define optoelectronic properties of many semiconductors, but are challenging to detect due to their weak coupling to light. The identification of an excitons' valley character is further limited by complexities associated with momentum-selective probes. Here, we study the photoluminescence of indirect excitons in controllably strained prototypical 2D semiconductors (WSe$_2$, WS$_2$) at cryogenic temperatures. We find that these excitons i) exhibit valley-specific energy shifts, enabling their valley fingerprinting, and ii) hybridize with bright excitons, becoming directly accessible to optical spectroscopy methods. This approach allows us to identify multiple previously inaccessible excitons with wavefunctions residing in K, $Γ$, or Q valleys in the momentum space as well as various types of defect-related excitons. Overall, our approach is well-suited to unravel and tune intervalley excitons in various semiconductors. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Comments: 9 pages, 4 figures, 1 table

Towards tunable graphene phononic crystals

Authors: Yuefeng Yu, Jan N. Kirchhof, Aleksei Tsarapkin, Victor Deinhart, Oguzhan Yucel, Bianca Höfer, Katja Höflich, Kirill I. Bolotin

Abstract: Phononic crystals (PnCs) are artificially patterned media exhibiting bands of allowed and forbidden zones for phonons. Many emerging applications of PnCs from solid-state simulators to quantum memories could benefit from the on-demand tunability of the phononic band structure. Here, we demonstrate the fabrication of suspended graphene PnCs in which the phononic band structure is controlled by mech… ▽ More Phononic crystals (PnCs) are artificially patterned media exhibiting bands of allowed and forbidden zones for phonons. Many emerging applications of PnCs from solid-state simulators to quantum memories could benefit from the on-demand tunability of the phononic band structure. Here, we demonstrate the fabrication of suspended graphene PnCs in which the phononic band structure is controlled by mechanical tension applied electrostatically. We show signatures of a mechanically tunable phononic band gap. The experimental data supported by simulation suggest a phononic band gap at 28$-$33 MHz in equilibrium, which upshifts by 9 MHz under a mechanical tension of 3.1 Nm$^{-1}$. This is an essential step towards tunable phononics paving the way for more experiments on phononic systems based on 2D materials. △ Less

Submitted 16 May, 2023; originally announced May 2023.

Nanomechanical absorption spectroscopy of 2D materials with femtowatt sensitivity

Authors: Jan N. Kirchhof, Yuefeng Yu, Denis Yagodkin, Nele Stetzuhn, Daniel B. de Araújo, Kostas Kanellopulos, Samuel Manas-Valero, Eugenio Coronado, Herre van der Zant, Stephanie Reich, Silvan Schmid, Kirill I. Bolotin

Abstract: Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectro… ▽ More Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectroscopy approaches. In the case of two-dimensional (2D) materials, NMS overcomes limitations inherent to conventional optical methods, such as the complications associated with measurements at high magnetic fields and low temperatures. In this work, we develop a protocol for NMS of 2D materials that yields two orders of magnitude improved sensitivity compared to previous approaches, while being simpler to use. To this end, we use electrical sample actuation, which simplifies the experiment and provides a reliable calibration for greater accuracy. Additionally, the use of low-stress silicon nitride membranes as our substrate reduces the noise-equivalent power to $NEP = 890 fW/\sqrt{Hz}$, comparable to commercial semiconductor photodetectors. We use our approach to spectroscopically characterize a two-dimensional transition metal dichalcogenide (WS$_2$), a layered magnetic semiconductor (CrPS$_4$), and a plasmonic supercrystal consisting of gold nanoparticles. △ Less

Submitted 28 January, 2023; originally announced January 2023.

Strain control of hybridization between dark and localized excitons in a 2D semiconductor

Authors: Pablo Hernández López, Sebastian Heeg, Christoph Schattauer, Sviatoslav Kovalchuk, Abhijeet Kumar, Douglas J. Bock, Jan N. Kirchhof, Bianca Hoefer, Kyrylo Greben, Florian Libisch, Kirill I. Bolotin

Abstract: Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behavior of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related… ▽ More Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behavior of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related to defects remains mostly unexplored. Here, we develop a technique capable of straining pristine suspended WSe2 kept at cryogenic temperatures up to 3\% to study the strain behavior of these fragile many-body states. We find that under the application of strain, dark and localized excitons in monolayer WSe2 - a prototypical 2D semiconductor - are brought into energetic resonance, forming a new hybrid state that inherits the properties of the constituent species. The characteristics of the hybridized state, including an order-of-magnitude enhanced light/matter coupling, avoided-crossing energy shifts, and strain tunability of many-body interactions, are all supported by first-principles calculations. The hybridized exciton reported here may play a critical role in the operation of single quantum emitters based on WSe2. Furthermore, the techniques we developed may be used to fingerprint unidentified excitonic states △ Less

Submitted 22 July, 2022; originally announced July 2022.

Comments: 15 pages, 5 figures

Mechanically-tunable bandgap closing in 2D graphene phononic crystals

Authors: Jan N. Kirchhof, Kirill I. Bolotin

Abstract: We present a tunable phononic crystal which undergoes a phase transition from mechanically insulating to mechanically transmissive (metallic). Specifically, in our simulations for a phononic lattice under biaxial tension ($σ_{xx} =σ_{yy}$ = 0.01 N$/$m), we find a bandgap for out-of-plane phonons in the range of 48.8 - 56.4 MHz, which we can close by increasing the degree of tension uniaxiality (… ▽ More We present a tunable phononic crystal which undergoes a phase transition from mechanically insulating to mechanically transmissive (metallic). Specifically, in our simulations for a phononic lattice under biaxial tension ($σ_{xx} =σ_{yy}$ = 0.01 N$/$m), we find a bandgap for out-of-plane phonons in the range of 48.8 - 56.4 MHz, which we can close by increasing the degree of tension uniaxiality ($σ_{xx} / σ_{yy}$) to 1.7. To manipulate the tension distribution, we design a realistic device of finite size, where $σ_{xx} / σ_{yy}$ is tuned by applying a gate voltage to a phononic crystal made from suspended graphene. We show that the phase transition can be probed via acoustic transmission measurements and that the phononic bandgap persists even after the inclusion surface contaminants and random tension variations present in realistic devices. The proposed system acts as a transistor for phonons with an on/off ratio of $10^5$ (100 dB suppression) and is thus a valuable extension for phonon logic applications. In addition, this mechanical analogue to a metal-insulator transition (mMIT) allows tunable coupling between mechanical entities (e.g. mechanical qubits). △ Less

Submitted 24 February, 2023; v1 submitted 23 June, 2022; originally announced June 2022.

Comments: SI at the end of the document

Nanomechanical spectroscopy of 2D materials

Authors: Jan N. Kirchhof, Yuefeng Yu, Gabriel Antheaume, Georgy Gordeev, Denis Yagodkin, Peter Elliott, Daniel B. de Araújo, Sangeeta Sharma, Stephanie Reich, Kirill I. Bolotin

Abstract: We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as… ▽ More We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as a function of photon energy, we obtain the real and imaginary parts of the dielectric function. Our measurements are unaffected by substrate-related screening and do not require any assumptions on the underling optical constants. This fast ($τ_{rise}$ $\sim$ 135 ns), sensitive (noise-equivalent power = 90 $\frac{pW}{\sqrt{Hz}}$ ), and broadband (1.2 $-$ 3.1 eV, extendable to UV-THz) method provides an attractive alternative to spectroscopic or ellipsometric characterisation techniques. △ Less

Submitted 26 September, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMn

Authors: Oliver Gueckstock, Rafael L. Seeger, Tom S. Seifert, Stephane Auffret, Serge Gambarelli, Jan N. Kirchhof, Kirill I. Bolotin, Vincent Baltz, Tobias Kampfrath, Lukáš Nádvorník

Abstract: Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pumping and THz spectroscopy tech… ▽ More Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pumping and THz spectroscopy techniques. We reveal a factor of 4 shorter characteristic propagation lengths of the spin current at THz frequencies (~ 0.5 nm) as compared to the GHz regime (~ 2 nm) which may be attributed to the ballistic and diffusive nature of electronic spin transport, respectively. The conclusion is supported by an extraction of sub-picosecond temporal dynamics of the THz spin current. We also report on a significant impact of the S2C originating from the IrMn/non-magnetic metal interface which is much more pronounced in the THz regime and opens the door for optimization of the spin control at ultrafast time scales. △ Less

Submitted 12 February, 2022; v1 submitted 7 November, 2021; originally announced November 2021.

Journal ref: Appl. Phys. Lett. 120, 062408 (2022)

Generating extreme electric fields in 2D materials by dual ionic gating

Authors: Benjamin I. Weintrub, Yu-Ling Hsieh, Jan N. Kirchhof, Kirill I. Bolotin

Abstract: We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below i… ▽ More We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, thereby producing an intense electric field across the 2DM. We determine the field strength via i) electrical transport measurements and ii) direct measurements of electrochemical potentials of the ILs using semiconducting 2DM, WSe2. The field strength across the material reaches more than 3.5 V/nm, the largest static electric field through any electronic device to date. We demonstrate that this field is strong enough to close the bandgap of trilayer WSe2 driving a semiconductor-to-metal transition. Our approach grants access to previously-inaccessible phenomena occurring in ultrastrong electric fields. △ Less

Submitted 5 July, 2022; v1 submitted 11 August, 2021; originally announced August 2021.

Journal ref: Nature Communications 13, 6601 (2022)

Tunable graphene phononic crystal

Authors: Jan N. Kirchhof, Kristina Weinel, Sebastian Heeg, Victor Deinhart, Sviatoslav Kovalchuk, Katja Hoeflich, Kirill I. Bolotin

Abstract: In the field of phononics, periodic patterning controls vibrations and thereby the flow of heat and sound in matter. Bandgaps arising in such phononic crystals realize low-dissipation vibrational modes and enable applications towards mechanical qubits, efficient waveguides, and state-of-the-art sensing. Here, we combine phononics and two-dimensional materials and explore the possibility of manipul… ▽ More In the field of phononics, periodic patterning controls vibrations and thereby the flow of heat and sound in matter. Bandgaps arising in such phononic crystals realize low-dissipation vibrational modes and enable applications towards mechanical qubits, efficient waveguides, and state-of-the-art sensing. Here, we combine phononics and two-dimensional materials and explore the possibility of manipulating phononic crystals via applied mechanical pressure. To this end, we fabricate the thinnest possible phononic crystal from monolayer graphene and simulate its vibrational properties. We find a bandgap in the MHz regime, within which we localize a defect mode with a small effective mass of 0.72 ag = 0.002 $m_{physical}$. Finally, we take advantage of graphene's flexibility and mechanically tune a finite size phononic crystal. Under electrostatic pressure up to 30 kPa, we observe an upshift in frequency of the entire phononic system by more than 350%. At the same time, the defect mode stays within the bandgap and remains localized, suggesting a high-quality, dynamically tunable mechanical system. △ Less

Submitted 25 February, 2021; v1 submitted 30 November, 2020; originally announced November 2020.

Comments: 19 pages, 4 figures; Supplementary Information of additional 19 pages and 9 figures

In situ functionalization of graphene

Authors: Kyrylo Greben, Sviatoslav Kovalchuk, Ana M. Valencia, Jan N. Kirchhof, Sebastian Heeg, Philipp Rietsch, Stephanie Reich, Caterina Cocchi, Siegfried Eigler, Kirill I. Bolotin

Abstract: While the basal plane of graphene is inert, defects in it are centers of chemical activity. An attractive application of such defects is towards controlled functionalization of graphene with foreign molecules. However, the interaction of the defects with reactive environment, such as ambient, decreases the efficiency of functionalization and makes it poorly controlled. Here, we report a novel appr… ▽ More While the basal plane of graphene is inert, defects in it are centers of chemical activity. An attractive application of such defects is towards controlled functionalization of graphene with foreign molecules. However, the interaction of the defects with reactive environment, such as ambient, decreases the efficiency of functionalization and makes it poorly controlled. Here, we report a novel approach to generate, monitor with time resolution, and functionalize the defects $\textit{in situ}$ without ever exposing them to the ambient. The defects are generated by an energetic Argon plasma and their properties are monitored using $\textit{in situ}$ Raman spectroscopy. We find that these defects are functional, very reactive, and strongly change their density from $\approx 1\cdot10^{13} cm^{-2}$ to $\approx 5\cdot10^{11} cm^{-2}$ upon exposure to air. We perform the proof of principle $\textit{in situ}$ functionalization by generating defects using the Argon plasma and functionalizing them $\textit{in situ}$ using Ammonia functional. The functionalization induces the n-doping with a carrier density up to $5\cdot10^{12} cm^{-2}$ in graphene and remains stable in ambient conditions. △ Less

Submitted 27 September, 2020; originally announced September 2020.

Comments: 12 pages, 4 figures, including Supplementary Information with 6 pages, 6 figures and 1 table

Neutral and charged excitons interplay in non-uniformly strain-engineered WS$_2$

Authors: Sviatoslav Kovalchuk, Moshe G. Harats, Guillermo López-Polín, Jan N. Kirchhof, Katja Höflich, Kirill I. Bolotin

Abstract: We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large ($>2\;\%$), strongly non-uniform ($>0.28\;\%/μm$), and in-situ tunable strain is induced in the monolayer by pressurizing it with inert gas. We observe peak shift… ▽ More We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large ($>2\;\%$), strongly non-uniform ($>0.28\;\%/μm$), and in-situ tunable strain is induced in the monolayer by pressurizing it with inert gas. We observe peak shifts and spectral shape changes in the photoluminescence spectra of strained WS$_2$. We interpret these changes as a signature of increased free electron density and resulting conversion of neutral excitons to trions in the region of high strain. Our result establishes non-uniform strain engineering as a novel and useful experimental `knob' for tuning optoelectronic properties of 2D semiconductors. △ Less

Submitted 15 January, 2020; originally announced January 2020.

Comments: 12 pages, 5 figures

Dynamics and efficient conversion of excitons to trions in non-uniformly strained monolayer WS$_2$

Authors: Moshe G. Harats, Jan N. Kirchhof, Mengxiong Qiao, Kyrylo Greben, Kirill I. Bolotin

Abstract: We investigate the transport of excitons and trions in monolayer semiconductor WS$_2$ subjected to controlled non-uniform mechanical strain. We actively control and tune the strain profiles with an AFM-based setup in which the monolayer is indented by an AFM tip. Optical spectroscopy is used to reveal the dynamics of the excited carriers. The non-uniform strain configuration locally changes the va… ▽ More We investigate the transport of excitons and trions in monolayer semiconductor WS$_2$ subjected to controlled non-uniform mechanical strain. We actively control and tune the strain profiles with an AFM-based setup in which the monolayer is indented by an AFM tip. Optical spectroscopy is used to reveal the dynamics of the excited carriers. The non-uniform strain configuration locally changes the valence and conduction bands of WS$_2$, giving rise to effective forces attracting excitons and trions towards the point of maximum strain underneath the AFM tip. We observe large changes in the photoluminescence spectra of WS$_2$ under strain, which we interpret using a drift-diffusion model. We show that the transport of neutral excitons, a process that was previously thought to be efficient in non-uniformly strained 2D semiconductors and termed as "funneling", is negligible at room temperature in contrast to previous observations. Conversely, we discover that redistribution of free carriers under non-uniform strain profiles leads to highly efficient conversion of excitons to trions. Conversion efficiency reaches $\simeq 100\%$ even without electrical gating. Our results explain inconsistencies in previous experiments and pave the way towards new types of optoelectronic devices. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Comments: 6 pages, 4 figures

Microstructure and Elastic Constants of Transition Metal Dichalcogenide Monolayers from Friction and Shear Force Microscopy

Authors: Xiaomin Xu, Thorsten Schultz, Ziyu Qin, Nikolai Severin, Benedikt Haas, Sumin Shen, Jan N. Kirchhof, Andreas Opitz, Christoph T. Koch, Kirill Bolotin, Jürgen P. Rabe, Goki Eda, Norbert Koch

Abstract: Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. Here we demonstrate how grain boundaries, crystal orientation, and strain fields can unambiguously… ▽ More Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. Here we demonstrate how grain boundaries, crystal orientation, and strain fields can unambiguously be identified with combined lateral force microscopy (LFM) and transverse shear microscopy (TSM) for CVD-grown tungsten disulfide (WS2) monolayers, on length scales that are relevant for optoelectronic applications. Further, angle-dependent TSM measurements enable us to acquire the fourth-order elastic constants of monolayer WS2 experimentally. Our results facilitate high-throughput and nondestructive microstructure visualization of monolayer TMDCs, insights into their elastic properties, thus providing an accessible tool to support the development of advanced optoelectronic devices based on such two-dimensional semiconductors. △ Less

Submitted 21 August, 2019; originally announced August 2019.

Journal ref: Advanced Materials 30 1803748 (2018)

Detecting Ultrasound Vibrations by Graphene Resonators

Authors: G. J. Verbiest, J. N. Kirchhof, J. Sonntag, M. Goldsche, T. Khodkov, C. Stampfer

Abstract: Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we… ▽ More Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we show a graphene resonator that detects ultrasound vibrations propagating through the substrate on which it was fabricated. We achieve ultimately a resolution of $\approx7$~pm/$\mathrm{\sqrt Hz}$ in ultrasound amplitude at frequencies up to 100~MHz. Thanks to an extremely high nonlinearity in the mechanical restoring force, the resonance frequency itself can also be used for ultrasound detection. We observe a shift of 120~kHz at a resonance frequency of 65~MHz for an induced vibration amplitude of 100~pm with a resolution of 25~pm. Remarkably, the nonlinearity also explains the generally observed asymmetry in the resonance frequency tuning of the resonator when pulled upon with an electrostatic gate. This work puts forward a sensor design that fits onto an atomic force microscope cantilever and therefore promises direct ultrasound detection at the nanoscale for nondestructive subsurface characterization. △ Less

Submitted 22 June, 2018; v1 submitted 6 February, 2018; originally announced February 2018.

Comments: 18 pages, 12 figures, 1 table