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Band gap formation in commensurate twisted bilayer graphene/hBN moiré lattices
Authors:
Alexander Rothstein,
Christoph Schattauer,
Robin J. Dolleman,
Stefan Trellenkamp,
Florian Lentz,
Kenji Watanabe,
Takashi Taniguchi,
Dante M. Kennes,
Bernd Beschoten,
Christoph Stampfer,
Florian Libisch
Abstract:
We report on the investigation of periodic superstructures in twisted bilayer graphene (tBLG) van-der-Waals heterostructures, where one of the graphene layers is aligned to hexagonal boron nitride (hBN). Our theoretical simulations reveal that if the ratio of the resulting two moiré unit cell areas is a simple fraction, the graphene/hBN moiré lattice acts as a staggered potential, breaking the deg…
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We report on the investigation of periodic superstructures in twisted bilayer graphene (tBLG) van-der-Waals heterostructures, where one of the graphene layers is aligned to hexagonal boron nitride (hBN). Our theoretical simulations reveal that if the ratio of the resulting two moiré unit cell areas is a simple fraction, the graphene/hBN moiré lattice acts as a staggered potential, breaking the degeneracy between tBLG AA sites. This leads to additional band gaps at energies where a subset of tBLG AA sites is fully occupied. These gaps manifest as Landau fans in magnetotransport, which we experimentally observe in an aligned tBLG/hBN heterostructure. Our study demonstrates the identification of commensurate tBLG/hBN van-der-Waals heterostructures by magnetotransport, highlights the persistence of moiré effects on length scales of tens of nanometers, and represents an interesting step forward in the ongoing effort to realise designed quantum materials with tailored properties.
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Submitted 21 March, 2024;
originally announced March 2024.
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Strain fingerprinting of exciton valley character
Authors:
Abhijeet Kumar,
Denis Yagodkin,
Roberto Rosati,
Douglas J Bock,
Christoph Schattauer,
Sarah Tobisch,
Joakim Hagel,
Bianca Höfer,
Jan N Kirchhof,
Pablo Hernández López,
Kenneth Burfeindt,
Sebastian Heeg,
Cornelius Gahl,
Florian Libisch,
Ermin Malic,
Kirill I Bolotin
Abstract:
Momentum-indirect excitons composed of electrons and holes in different valleys define optoelectronic properties of many semiconductors, but are challenging to detect due to their weak coupling to light. The identification of an excitons' valley character is further limited by complexities associated with momentum-selective probes. Here, we study the photoluminescence of indirect excitons in contr…
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Momentum-indirect excitons composed of electrons and holes in different valleys define optoelectronic properties of many semiconductors, but are challenging to detect due to their weak coupling to light. The identification of an excitons' valley character is further limited by complexities associated with momentum-selective probes. Here, we study the photoluminescence of indirect excitons in controllably strained prototypical 2D semiconductors (WSe$_2$, WS$_2$) at cryogenic temperatures. We find that these excitons i) exhibit valley-specific energy shifts, enabling their valley fingerprinting, and ii) hybridize with bright excitons, becoming directly accessible to optical spectroscopy methods. This approach allows us to identify multiple previously inaccessible excitons with wavefunctions residing in K, $Γ$, or Q valleys in the momentum space as well as various types of defect-related excitons. Overall, our approach is well-suited to unravel and tune intervalley excitons in various semiconductors.
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Submitted 12 December, 2023;
originally announced December 2023.
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Mapping quantum Hall edge states in graphene by scanning tunneling microscopy
Authors:
T. Johnsen,
C. Schattauer,
S. Samaddar,
A. Weston,
M. Hamer,
K. Watanabe,
T. Taniguchi,
R. Gorbachev,
F. Libisch,
M. Morgenstern
Abstract:
Quantum Hall edge states are the paradigmatic example of the bulk-boundary correspondence. They are prone to intricate reconstructions calling for their detailed investigation at high spatial resolution. Here, we map quantum Hall edge states of monolayer graphene at a magnetic field of 7 T with scanning tunneling microscopy. The graphene sample features a gate-tunable lateral interface between are…
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Quantum Hall edge states are the paradigmatic example of the bulk-boundary correspondence. They are prone to intricate reconstructions calling for their detailed investigation at high spatial resolution. Here, we map quantum Hall edge states of monolayer graphene at a magnetic field of 7 T with scanning tunneling microscopy. The graphene sample features a gate-tunable lateral interface between areas of different filling factor. We compare the results with detailed tight-binding calculations quantitatively accounting for the perturbation by the tip-induced quantum dot. We find that the edge state pattern is mapped with little perturbation by adequate choice of gate voltage. We observe extended compressible regions, the antinodal structure of edge states and their meandering along the lateral interface.
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Submitted 6 April, 2023; v1 submitted 4 October, 2022;
originally announced October 2022.
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Strain control of hybridization between dark and localized excitons in a 2D semiconductor
Authors:
Pablo Hernández López,
Sebastian Heeg,
Christoph Schattauer,
Sviatoslav Kovalchuk,
Abhijeet Kumar,
Douglas J. Bock,
Jan N. Kirchhof,
Bianca Hoefer,
Kyrylo Greben,
Florian Libisch,
Kirill I. Bolotin
Abstract:
Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behavior of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related…
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Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behavior of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related to defects remains mostly unexplored. Here, we develop a technique capable of straining pristine suspended WSe2 kept at cryogenic temperatures up to 3\% to study the strain behavior of these fragile many-body states. We find that under the application of strain, dark and localized excitons in monolayer WSe2 - a prototypical 2D semiconductor - are brought into energetic resonance, forming a new hybrid state that inherits the properties of the constituent species. The characteristics of the hybridized state, including an order-of-magnitude enhanced light/matter coupling, avoided-crossing energy shifts, and strain tunability of many-body interactions, are all supported by first-principles calculations. The hybridized exciton reported here may play a critical role in the operation of single quantum emitters based on WSe2. Furthermore, the techniques we developed may be used to fingerprint unidentified excitonic states
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Submitted 22 July, 2022;
originally announced July 2022.
