Showing 1–9 of 9 results for author: Yagodkin, D

Strain activation of localized states in WSe2

Authors: Oguzhan Yücel, Denis Yagodkin, Jan N. Kirchhof, Abhijeet Kumar, Adrian Dewambrechies, Sviatoslav Kovalchuk, Yufeng Yu, Kirill I. Bolotin

Abstract: We explore strain-activated emission centers formed by atomic force microscopy (AFM) indentation in monolayer \ce{WSe2} on a flexible polymer substrate. In the indented areas, we observe sharp new photoluminescence (PL) peaks characterized by sublinear power dependence in the spectral regions 1.62 $-$ 1.66 eV and 1.70 $-$ 1.73 eV. After low-temperature thermal annealing ($< 120$ $^{\circ}$C), \ce{… ▽ More We explore strain-activated emission centers formed by atomic force microscopy (AFM) indentation in monolayer \ce{WSe2} on a flexible polymer substrate. In the indented areas, we observe sharp new photoluminescence (PL) peaks characterized by sublinear power dependence in the spectral regions 1.62 $-$ 1.66 eV and 1.70 $-$ 1.73 eV. After low-temperature thermal annealing ($< 120$ $^{\circ}$C), \ce{WSe2} experiences strain relaxation, leading to a blue shift of the peaks' spectral position and their ultimate disappearance. Our analysis of peaks' position vs. strain allows drawing multiple conclusions regarding the nature of these emission centers. We elucidate the roles of excitonic confinement and hybridization between free excitons and defect-related states, a process activated by the level of strain. Overall, our approach suggests that the energy of localized emitters may be controlled via strain engineering. △ Less

Submitted 16 February, 2024; originally announced February 2024.

Strain fingerprinting of exciton valley character

Authors: Abhijeet Kumar, Denis Yagodkin, Roberto Rosati, Douglas J Bock, Christoph Schattauer, Sarah Tobisch, Joakim Hagel, Bianca Höfer, Jan N Kirchhof, Pablo Hernández López, Kenneth Burfeindt, Sebastian Heeg, Cornelius Gahl, Florian Libisch, Ermin Malic, Kirill I Bolotin

Abstract: Momentum-indirect excitons composed of electrons and holes in different valleys define optoelectronic properties of many semiconductors, but are challenging to detect due to their weak coupling to light. The identification of an excitons' valley character is further limited by complexities associated with momentum-selective probes. Here, we study the photoluminescence of indirect excitons in contr… ▽ More Momentum-indirect excitons composed of electrons and holes in different valleys define optoelectronic properties of many semiconductors, but are challenging to detect due to their weak coupling to light. The identification of an excitons' valley character is further limited by complexities associated with momentum-selective probes. Here, we study the photoluminescence of indirect excitons in controllably strained prototypical 2D semiconductors (WSe$_2$, WS$_2$) at cryogenic temperatures. We find that these excitons i) exhibit valley-specific energy shifts, enabling their valley fingerprinting, and ii) hybridize with bright excitons, becoming directly accessible to optical spectroscopy methods. This approach allows us to identify multiple previously inaccessible excitons with wavefunctions residing in K, $Γ$, or Q valleys in the momentum space as well as various types of defect-related excitons. Overall, our approach is well-suited to unravel and tune intervalley excitons in various semiconductors. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Comments: 9 pages, 4 figures, 1 table

Probing the formation of dark interlayer excitons via ultrafast photocurrent

Authors: Denis Yagodkin, Elias Ankerhold, Abhijeet Kumar, Johanna Richter, Kenji Watanabe, Takashi Taniguchi, Cornelius Gahl, Kirill. I. Bolotin

Abstract: Optically dark excitons determine a wide range of properties of photoexcited semiconductors yet are hard to access via conventional spectroscopies. Here, we develop a time-resolved ultrafast photocurrent technique (trPC) to probe the formation dynamics of optically dark excitons. The nonlinear nature of the trPC makes it particularly sensitive to the formation of excitons occurring at the femtosec… ▽ More Optically dark excitons determine a wide range of properties of photoexcited semiconductors yet are hard to access via conventional spectroscopies. Here, we develop a time-resolved ultrafast photocurrent technique (trPC) to probe the formation dynamics of optically dark excitons. The nonlinear nature of the trPC makes it particularly sensitive to the formation of excitons occurring at the femtosecond timescale after the excitation. As proof of principle, we extract the interlayer exciton formation time 0.4~ps at 160 $μ$J/cm$^2$ fluence in a MoS$_2$/MoSe$_2$ heterostructure and show that this time decreases with fluence. In addition, our approach provides access to the dynamics of carriers and their interlayer transport. Overall, our work establishes trPC as a technique to study dark excitons in various systems that are hard to probe by other approaches. △ Less

Submitted 28 February, 2023; originally announced February 2023.

Nanomechanical absorption spectroscopy of 2D materials with femtowatt sensitivity

Authors: Jan N. Kirchhof, Yuefeng Yu, Denis Yagodkin, Nele Stetzuhn, Daniel B. de Araújo, Kostas Kanellopulos, Samuel Manas-Valero, Eugenio Coronado, Herre van der Zant, Stephanie Reich, Silvan Schmid, Kirill I. Bolotin

Abstract: Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectro… ▽ More Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectroscopy approaches. In the case of two-dimensional (2D) materials, NMS overcomes limitations inherent to conventional optical methods, such as the complications associated with measurements at high magnetic fields and low temperatures. In this work, we develop a protocol for NMS of 2D materials that yields two orders of magnitude improved sensitivity compared to previous approaches, while being simpler to use. To this end, we use electrical sample actuation, which simplifies the experiment and provides a reliable calibration for greater accuracy. Additionally, the use of low-stress silicon nitride membranes as our substrate reduces the noise-equivalent power to $NEP = 890 fW/\sqrt{Hz}$, comparable to commercial semiconductor photodetectors. We use our approach to spectroscopically characterize a two-dimensional transition metal dichalcogenide (WS$_2$), a layered magnetic semiconductor (CrPS$_4$), and a plasmonic supercrystal consisting of gold nanoparticles. △ Less

Submitted 28 January, 2023; originally announced January 2023.

Nanomechanical spectroscopy of 2D materials

Authors: Jan N. Kirchhof, Yuefeng Yu, Gabriel Antheaume, Georgy Gordeev, Denis Yagodkin, Peter Elliott, Daniel B. de Araújo, Sangeeta Sharma, Stephanie Reich, Kirill I. Bolotin

Abstract: We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as… ▽ More We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as a function of photon energy, we obtain the real and imaginary parts of the dielectric function. Our measurements are unaffected by substrate-related screening and do not require any assumptions on the underling optical constants. This fast ($τ_{rise}$ $\sim$ 135 ns), sensitive (noise-equivalent power = 90 $\frac{pW}{\sqrt{Hz}}$ ), and broadband (1.2 $-$ 3.1 eV, extendable to UV-THz) method provides an attractive alternative to spectroscopic or ellipsometric characterisation techniques. △ Less

Submitted 26 September, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Extrinsic localized excitons in patterned 2D semiconductors

Authors: D Yagodkin, K Greben, A Eljarrat, S Kovalchuk, M Ghorbani-Asl, M Jain, S Kretschmer, N Severin, J P Rabe, A V Krasheninnikov, C T Koch, K I Bolotin

Abstract: We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state,… ▽ More We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state, which is distinguished by non-linear power dependence, survives up to room temperature and is patternable down to 20 nm resolution. We probe the response of the new exciton to the changes of electron energy, nanomechanical cleaning, and encapsulation via multiple microscopic, spectroscopic, and computational techniques. All these approaches suggest that the state does not originate from irradiation-induced structural defects or spatially non-uniform strain, as commonly assumed. Instead, we show that it is extrinsic, likely a charge transfer exciton associated with the organic substance deposited onto the 2D semiconductor. By demonstrating that structural defects are not required for the formation of localized excitons, our work opens new possibilities for further understanding of these states and using them for example in chemical sensing and quantum technologies. △ Less

Submitted 29 March, 2022; v1 submitted 28 May, 2021; originally announced May 2021.

Spin/valley coupled dynamics of electrons and holes at the ${\text{MoS}_{2}-\text{MoSe}_{2}}$ interface

Authors: Abhijeet Kumar, Denis Yagodkin, Nele Stetzuhn, Sviatoslav Kovalchuk, Alexey Melnikov, Peter Elliott, Sangeeta Sharma, Cornelius Gahl, Kirill I. Bolotin

Abstract: The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical pumping of spin/valley polarized carriers across the interface and to elucidate the mechanisms governing their subsequent relaxation. By applying time-resolved… ▽ More The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical pumping of spin/valley polarized carriers across the interface and to elucidate the mechanisms governing their subsequent relaxation. By applying time-resolved Kerr and reflectivity spectroscopies, we find that the photoexcited carriers conserve their spin for both tunneling directions across the interface. Following this, we measure dramatically different spin/valley depolarization rates for electrons and holes, $\sim 30\,{\text{ns}}^{-1}$ and $< 1\,{\text{ns}}^{-1}$, respectively and show that this difference relates to the disparity in the spin-orbit splitting in conduction and valence bands of TMDs. Our work provides insights into the spin/valley dynamics of free carriers unaffected by complex excitonic processes and establishes TMD heterostructures as generators of spin currents in spin/valleytronic devices. △ Less

Submitted 9 July, 2021; v1 submitted 17 March, 2021; originally announced March 2021.

Comments: 15 + 6 pages; 4 + 3 figures

Ultrafast photocurrents in MoSe$_2$ probed by terahertz spectroscopy

Authors: Denis Yagodkin, Lukas Nadvornik, Oliver Gueckstock, Cornelius Gahl, Tobias Kampfrath, Kirill I. Bolotin

Abstract: We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30\,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond… ▽ More We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30\,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond timescale by out-of-plane currents due to the drift of photoexcited charge carriers in the surface electric field. The BL emission is generated by an in-plane shift current. Finally, we observe oscillations at about $23\,$THz in the emission from the BL sample. We attribute the oscillations to quantum beats between two excitonic states with energetic separation of $\sim100\,$meV. △ Less

Submitted 21 December, 2020; v1 submitted 27 August, 2020; originally announced August 2020.

Comments: This is the Accepted Manuscript version of an article accepted for publication in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1583/abd527 7 pages, 9 figures

Resonant Terahertz Detection Using Graphene Plasmons

Authors: D. A. Bandurin, D. Svintsov, I. Gayduchenko, S. G. Xu, A. Principi, M. Moskotin, I. Tretyakov, D. Yagodkin, S. Zhukov, T. Taniguchi, K. Watanabe, I. V. Grigorieva, M. Polini, G. Goltsman, A. K. Geim, G. Fedorov

Abstract: Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it sup… ▽ More Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moiré minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures and strong magnetic fields) and promise a viable route for various photonic applications. △ Less

Submitted 27 November, 2018; v1 submitted 12 July, 2018; originally announced July 2018.

Comments: 19 pages, 12 figures

Journal ref: Nature Communications 9, 5392 (2018)