Showing 1–50 of 51 results for author: Bolotin, K

Ultrafast Optical Control of Rashba Interactions in a TMDC Heterostructure

Authors: Henry Mittenzwey, Abhijeet Kumar, Raghav Dhingra, Kenji Watanabe, Takashi Taniguchi, Cornelius Gahl, Kirill I. Bolotin, Malte Selig, Andreas Knorr

Abstract: We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such a system, Rashba interactions arise from an out-of-plane electric field due to photo-generated interlayer excitons inducing a phonon-assisted intravalley spin relaxation. We develop a theoretical description based on a microscopic approach to quantify the magnitude o… ▽ More We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such a system, Rashba interactions arise from an out-of-plane electric field due to photo-generated interlayer excitons inducing a phonon-assisted intravalley spin relaxation. We develop a theoretical description based on a microscopic approach to quantify the magnitude of Rashba interactions and test these predictions via time-resolved Kerr rotation measurements. In agreement with the calculations, we find that the Rashba-induced intravalley spin mixing becomes the dominating spin relaxation channel above T = 50 K. Our work identifies a previously unexplored spin-depolarization channel in heterostructures which can be used for ultrafast spin manipulation. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Strain activation of localized states in WSe2

Authors: Oguzhan Yücel, Denis Yagodkin, Jan N. Kirchhof, Abhijeet Kumar, Adrian Dewambrechies, Sviatoslav Kovalchuk, Yufeng Yu, Kirill I. Bolotin

Abstract: We explore strain-activated emission centers formed by atomic force microscopy (AFM) indentation in monolayer \ce{WSe2} on a flexible polymer substrate. In the indented areas, we observe sharp new photoluminescence (PL) peaks characterized by sublinear power dependence in the spectral regions 1.62 $-$ 1.66 eV and 1.70 $-$ 1.73 eV. After low-temperature thermal annealing ($< 120$ $^{\circ}$C), \ce{… ▽ More We explore strain-activated emission centers formed by atomic force microscopy (AFM) indentation in monolayer \ce{WSe2} on a flexible polymer substrate. In the indented areas, we observe sharp new photoluminescence (PL) peaks characterized by sublinear power dependence in the spectral regions 1.62 $-$ 1.66 eV and 1.70 $-$ 1.73 eV. After low-temperature thermal annealing ($< 120$ $^{\circ}$C), \ce{WSe2} experiences strain relaxation, leading to a blue shift of the peaks' spectral position and their ultimate disappearance. Our analysis of peaks' position vs. strain allows drawing multiple conclusions regarding the nature of these emission centers. We elucidate the roles of excitonic confinement and hybridization between free excitons and defect-related states, a process activated by the level of strain. Overall, our approach suggests that the energy of localized emitters may be controlled via strain engineering. △ Less

Submitted 16 February, 2024; originally announced February 2024.

Strain fingerprinting of exciton valley character

Authors: Abhijeet Kumar, Denis Yagodkin, Roberto Rosati, Douglas J Bock, Christoph Schattauer, Sarah Tobisch, Joakim Hagel, Bianca Höfer, Jan N Kirchhof, Pablo Hernández López, Kenneth Burfeindt, Sebastian Heeg, Cornelius Gahl, Florian Libisch, Ermin Malic, Kirill I Bolotin

Abstract: Momentum-indirect excitons composed of electrons and holes in different valleys define optoelectronic properties of many semiconductors, but are challenging to detect due to their weak coupling to light. The identification of an excitons' valley character is further limited by complexities associated with momentum-selective probes. Here, we study the photoluminescence of indirect excitons in contr… ▽ More Momentum-indirect excitons composed of electrons and holes in different valleys define optoelectronic properties of many semiconductors, but are challenging to detect due to their weak coupling to light. The identification of an excitons' valley character is further limited by complexities associated with momentum-selective probes. Here, we study the photoluminescence of indirect excitons in controllably strained prototypical 2D semiconductors (WSe$_2$, WS$_2$) at cryogenic temperatures. We find that these excitons i) exhibit valley-specific energy shifts, enabling their valley fingerprinting, and ii) hybridize with bright excitons, becoming directly accessible to optical spectroscopy methods. This approach allows us to identify multiple previously inaccessible excitons with wavefunctions residing in K, $Γ$, or Q valleys in the momentum space as well as various types of defect-related excitons. Overall, our approach is well-suited to unravel and tune intervalley excitons in various semiconductors. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Comments: 9 pages, 4 figures, 1 table

Towards tunable graphene phononic crystals

Authors: Yuefeng Yu, Jan N. Kirchhof, Aleksei Tsarapkin, Victor Deinhart, Oguzhan Yucel, Bianca Höfer, Katja Höflich, Kirill I. Bolotin

Abstract: Phononic crystals (PnCs) are artificially patterned media exhibiting bands of allowed and forbidden zones for phonons. Many emerging applications of PnCs from solid-state simulators to quantum memories could benefit from the on-demand tunability of the phononic band structure. Here, we demonstrate the fabrication of suspended graphene PnCs in which the phononic band structure is controlled by mech… ▽ More Phononic crystals (PnCs) are artificially patterned media exhibiting bands of allowed and forbidden zones for phonons. Many emerging applications of PnCs from solid-state simulators to quantum memories could benefit from the on-demand tunability of the phononic band structure. Here, we demonstrate the fabrication of suspended graphene PnCs in which the phononic band structure is controlled by mechanical tension applied electrostatically. We show signatures of a mechanically tunable phononic band gap. The experimental data supported by simulation suggest a phononic band gap at 28$-$33 MHz in equilibrium, which upshifts by 9 MHz under a mechanical tension of 3.1 Nm$^{-1}$. This is an essential step towards tunable phononics paving the way for more experiments on phononic systems based on 2D materials. △ Less

Submitted 16 May, 2023; originally announced May 2023.

Interlayer excitons in semiconductor bilayers under a strong electric field

Authors: S. Kovalchuk, K. Greben, A. Kumar, S. Pessel, K. Watanabe, T. Taniguchi, D. Christiansen, M. Selig, A. Knorr, K. I. Bolotin

Abstract: Excitons in bilayer transition metal dichalcogenides (2L-TMDs) are Coulomb-bound electron/hole pairs that can be viewed as broadly tunable analogs of atomic or molecular systems. Here, we study the properties of 2L-TMD excitons under strong electric field. To overcome the field limit, reached in previous experiments, we developed a new organic/inorganic molecular gating technique. Our approach all… ▽ More Excitons in bilayer transition metal dichalcogenides (2L-TMDs) are Coulomb-bound electron/hole pairs that can be viewed as broadly tunable analogs of atomic or molecular systems. Here, we study the properties of 2L-TMD excitons under strong electric field. To overcome the field limit, reached in previous experiments, we developed a new organic/inorganic molecular gating technique. Our approach allows reaching the field > 0.27 V nm-1, about twice higher than previously available. Under this field inter and intra-layer excitonic are brought into an energetic resonance, allowing us to discover new emergent properties of the resulting hybridized states. First, as the result of hybridization, intralayer excitons acquire an interlayer character. Second, the same hybridization allows us to detect new excitonic species. Third, we observe an ultra-strong Stark splitting of > 380 meV with exciton energies tunable over a large range of the optical spectrum, with potential implications for optoelectronics. Our work creates new possibilities for using strong electric fields to unlock new physical regimes and control exciton hybridization in 2D heterostructures and other systems. △ Less

Submitted 17 March, 2023; originally announced March 2023.

Comments: 11 pages, 4 figures

Probing the formation of dark interlayer excitons via ultrafast photocurrent

Authors: Denis Yagodkin, Elias Ankerhold, Abhijeet Kumar, Johanna Richter, Kenji Watanabe, Takashi Taniguchi, Cornelius Gahl, Kirill. I. Bolotin

Abstract: Optically dark excitons determine a wide range of properties of photoexcited semiconductors yet are hard to access via conventional spectroscopies. Here, we develop a time-resolved ultrafast photocurrent technique (trPC) to probe the formation dynamics of optically dark excitons. The nonlinear nature of the trPC makes it particularly sensitive to the formation of excitons occurring at the femtosec… ▽ More Optically dark excitons determine a wide range of properties of photoexcited semiconductors yet are hard to access via conventional spectroscopies. Here, we develop a time-resolved ultrafast photocurrent technique (trPC) to probe the formation dynamics of optically dark excitons. The nonlinear nature of the trPC makes it particularly sensitive to the formation of excitons occurring at the femtosecond timescale after the excitation. As proof of principle, we extract the interlayer exciton formation time 0.4~ps at 160 $μ$J/cm$^2$ fluence in a MoS$_2$/MoSe$_2$ heterostructure and show that this time decreases with fluence. In addition, our approach provides access to the dynamics of carriers and their interlayer transport. Overall, our work establishes trPC as a technique to study dark excitons in various systems that are hard to probe by other approaches. △ Less

Submitted 28 February, 2023; originally announced February 2023.

Observation of tunable discrete time crystalline phases

Authors: Arnab Sarkar, Anurag, Rajan Singh, Aamir A. Makki, Javed A. Mondal, Ateesh K. Rathi, Ryan J. T. Nicholl, Sagar Chakraborty, Kirill I. Bolotin, Saikat Ghosh

Abstract: Discrete time crystals (DTCs) are emergent non-equilibrium phases of periodically driven many-body systems, with potential applications ranging from quantum computing to sensing and metrology. There has been significant recent interest in understanding mechanisms leading to DTC formation and a search for novel DTC phases beyond subharmonic entrainment. Here, we report observation of multiple DTC p… ▽ More Discrete time crystals (DTCs) are emergent non-equilibrium phases of periodically driven many-body systems, with potential applications ranging from quantum computing to sensing and metrology. There has been significant recent interest in understanding mechanisms leading to DTC formation and a search for novel DTC phases beyond subharmonic entrainment. Here, we report observation of multiple DTC phases in a nanoelectromechanical system (NEMS) based on coupled graphene and silicon nitride membranes. We confirm the time-crystalline nature of these symmetry broken phases by establishing their many-body characters, long-range time and spatial order, and rigidity against parameter fluctuation or noise. Furthermore, we employ controlled mechanical strain to drive the transitions between phases with different symmetries, thereby mapping the emergent time-crystalline phase diagram. Overall, our work takes a step towards establishing time crystals as a system with complexity rivaling that of solid state crystals. △ Less

Submitted 26 February, 2023; originally announced February 2023.

Comments: 8 pages, 4 figures

Nanomechanical absorption spectroscopy of 2D materials with femtowatt sensitivity

Authors: Jan N. Kirchhof, Yuefeng Yu, Denis Yagodkin, Nele Stetzuhn, Daniel B. de Araújo, Kostas Kanellopulos, Samuel Manas-Valero, Eugenio Coronado, Herre van der Zant, Stephanie Reich, Silvan Schmid, Kirill I. Bolotin

Abstract: Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectro… ▽ More Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectroscopy approaches. In the case of two-dimensional (2D) materials, NMS overcomes limitations inherent to conventional optical methods, such as the complications associated with measurements at high magnetic fields and low temperatures. In this work, we develop a protocol for NMS of 2D materials that yields two orders of magnitude improved sensitivity compared to previous approaches, while being simpler to use. To this end, we use electrical sample actuation, which simplifies the experiment and provides a reliable calibration for greater accuracy. Additionally, the use of low-stress silicon nitride membranes as our substrate reduces the noise-equivalent power to $NEP = 890 fW/\sqrt{Hz}$, comparable to commercial semiconductor photodetectors. We use our approach to spectroscopically characterize a two-dimensional transition metal dichalcogenide (WS$_2$), a layered magnetic semiconductor (CrPS$_4$), and a plasmonic supercrystal consisting of gold nanoparticles. △ Less

Submitted 28 January, 2023; originally announced January 2023.

Impact of dark excitons on Förster type resonant energy transfer between dye molecules and atomically thin semiconductors

Authors: Manuel Katzer, Sviatoslav Kovalchuk, Kyrylo Greben, Kirill I. Bolotin, Malte Selig, Andreas Knorr

Abstract: Interfaces of dye molecules and two-dimensional transition metal dichalcogenides (TMDCs) combine strong molecular dipole excitations with high carrier mobilities in semiconductors. Förster type energy transfer is one key mechanism for the coupling between both constituents. We report microscopic calculations of a spectrally resolved Förster induced transition rate from dye molecules to a TMDC laye… ▽ More Interfaces of dye molecules and two-dimensional transition metal dichalcogenides (TMDCs) combine strong molecular dipole excitations with high carrier mobilities in semiconductors. Förster type energy transfer is one key mechanism for the coupling between both constituents. We report microscopic calculations of a spectrally resolved Förster induced transition rate from dye molecules to a TMDC layer. Our approach is based on microscopic Bloch equations which are solved self-consistently together with Maxwells equations. This approach allows to incorporate the dielectric environment of a TMDC semiconductor, sandwiched between donor molecules and a substrate. Our analysis reveals transfer rates in the meV range for typical dye molecules in closely stacked structures, with a non-trivial dependence of the Förster rate on the molecular transition energy resulting from unique signatures of dark, momentum forbidden TMDC excitons. △ Less

Submitted 6 January, 2023; originally announced January 2023.

Journal ref: Phys. Rev. B 107, 035304 (2023)

Strain control of hybridization between dark and localized excitons in a 2D semiconductor

Authors: Pablo Hernández López, Sebastian Heeg, Christoph Schattauer, Sviatoslav Kovalchuk, Abhijeet Kumar, Douglas J. Bock, Jan N. Kirchhof, Bianca Hoefer, Kyrylo Greben, Florian Libisch, Kirill I. Bolotin

Abstract: Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behavior of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related… ▽ More Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behavior of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related to defects remains mostly unexplored. Here, we develop a technique capable of straining pristine suspended WSe2 kept at cryogenic temperatures up to 3\% to study the strain behavior of these fragile many-body states. We find that under the application of strain, dark and localized excitons in monolayer WSe2 - a prototypical 2D semiconductor - are brought into energetic resonance, forming a new hybrid state that inherits the properties of the constituent species. The characteristics of the hybridized state, including an order-of-magnitude enhanced light/matter coupling, avoided-crossing energy shifts, and strain tunability of many-body interactions, are all supported by first-principles calculations. The hybridized exciton reported here may play a critical role in the operation of single quantum emitters based on WSe2. Furthermore, the techniques we developed may be used to fingerprint unidentified excitonic states △ Less

Submitted 22 July, 2022; originally announced July 2022.

Comments: 15 pages, 5 figures

High power density energy harvesting devices based on the anomalous Nernst effect of Co/Pt magnetic multilayers

Authors: Guillermo Lopez-Polin, Hugo Aramberri, Jorge Marques-Marchan, Benjamin I. Weintrub, Kirill I. Bolotin, Jorge I. Cerda, Agustina Asenjo

Abstract: The anomalous Nernst effect (ANE) is a thermomagnetic phenomenon with potential applications in thermal energy harvesting. While many recent works studied the approaches to increase the ANE coefficient of materials, relatively little effort was devoted to increasing the power supplied by the effect. Here we demonstrate a nanofabricated device with record power density generated by the ANE. To acco… ▽ More The anomalous Nernst effect (ANE) is a thermomagnetic phenomenon with potential applications in thermal energy harvesting. While many recent works studied the approaches to increase the ANE coefficient of materials, relatively little effort was devoted to increasing the power supplied by the effect. Here we demonstrate a nanofabricated device with record power density generated by the ANE. To accomplish this, we fabricate micrometer-sized devices in which the thermal gradient is three orders of magnitude higher than conventional macroscopic devices. In addition, we use Co/Pt multilayers, a system characterized by a high ANE thermopower (~1 microV/K), low electrical resistivity, and perpendicular magnetic anisotropy. These innovations allow us to obtain power densities of around 13 W/cm3. We believe that this design may find uses in harvesting wasted energy in e.g. electronic devices. △ Less

Submitted 19 August, 2022; v1 submitted 15 July, 2022; originally announced July 2022.

Mechanically-tunable bandgap closing in 2D graphene phononic crystals

Authors: Jan N. Kirchhof, Kirill I. Bolotin

Abstract: We present a tunable phononic crystal which undergoes a phase transition from mechanically insulating to mechanically transmissive (metallic). Specifically, in our simulations for a phononic lattice under biaxial tension ($σ_{xx} =σ_{yy}$ = 0.01 N$/$m), we find a bandgap for out-of-plane phonons in the range of 48.8 - 56.4 MHz, which we can close by increasing the degree of tension uniaxiality (… ▽ More We present a tunable phononic crystal which undergoes a phase transition from mechanically insulating to mechanically transmissive (metallic). Specifically, in our simulations for a phononic lattice under biaxial tension ($σ_{xx} =σ_{yy}$ = 0.01 N$/$m), we find a bandgap for out-of-plane phonons in the range of 48.8 - 56.4 MHz, which we can close by increasing the degree of tension uniaxiality ($σ_{xx} / σ_{yy}$) to 1.7. To manipulate the tension distribution, we design a realistic device of finite size, where $σ_{xx} / σ_{yy}$ is tuned by applying a gate voltage to a phononic crystal made from suspended graphene. We show that the phase transition can be probed via acoustic transmission measurements and that the phononic bandgap persists even after the inclusion surface contaminants and random tension variations present in realistic devices. The proposed system acts as a transistor for phonons with an on/off ratio of $10^5$ (100 dB suppression) and is thus a valuable extension for phonon logic applications. In addition, this mechanical analogue to a metal-insulator transition (mMIT) allows tunable coupling between mechanical entities (e.g. mechanical qubits). △ Less

Submitted 24 February, 2023; v1 submitted 23 June, 2022; originally announced June 2022.

Comments: SI at the end of the document

Nanomechanical spectroscopy of 2D materials

Authors: Jan N. Kirchhof, Yuefeng Yu, Gabriel Antheaume, Georgy Gordeev, Denis Yagodkin, Peter Elliott, Daniel B. de Araújo, Sangeeta Sharma, Stephanie Reich, Kirill I. Bolotin

Abstract: We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as… ▽ More We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as a function of photon energy, we obtain the real and imaginary parts of the dielectric function. Our measurements are unaffected by substrate-related screening and do not require any assumptions on the underling optical constants. This fast ($τ_{rise}$ $\sim$ 135 ns), sensitive (noise-equivalent power = 90 $\frac{pW}{\sqrt{Hz}}$ ), and broadband (1.2 $-$ 3.1 eV, extendable to UV-THz) method provides an attractive alternative to spectroscopic or ellipsometric characterisation techniques. △ Less

Submitted 26 September, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMn

Authors: Oliver Gueckstock, Rafael L. Seeger, Tom S. Seifert, Stephane Auffret, Serge Gambarelli, Jan N. Kirchhof, Kirill I. Bolotin, Vincent Baltz, Tobias Kampfrath, Lukáš Nádvorník

Abstract: Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pumping and THz spectroscopy tech… ▽ More Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pumping and THz spectroscopy techniques. We reveal a factor of 4 shorter characteristic propagation lengths of the spin current at THz frequencies (~ 0.5 nm) as compared to the GHz regime (~ 2 nm) which may be attributed to the ballistic and diffusive nature of electronic spin transport, respectively. The conclusion is supported by an extraction of sub-picosecond temporal dynamics of the THz spin current. We also report on a significant impact of the S2C originating from the IrMn/non-magnetic metal interface which is much more pronounced in the THz regime and opens the door for optimization of the spin control at ultrafast time scales. △ Less

Submitted 12 February, 2022; v1 submitted 7 November, 2021; originally announced November 2021.

Journal ref: Appl. Phys. Lett. 120, 062408 (2022)

Generating extreme electric fields in 2D materials by dual ionic gating

Authors: Benjamin I. Weintrub, Yu-Ling Hsieh, Jan N. Kirchhof, Kirill I. Bolotin

Abstract: We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below i… ▽ More We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, thereby producing an intense electric field across the 2DM. We determine the field strength via i) electrical transport measurements and ii) direct measurements of electrochemical potentials of the ILs using semiconducting 2DM, WSe2. The field strength across the material reaches more than 3.5 V/nm, the largest static electric field through any electronic device to date. We demonstrate that this field is strong enough to close the bandgap of trilayer WSe2 driving a semiconductor-to-metal transition. Our approach grants access to previously-inaccessible phenomena occurring in ultrastrong electric fields. △ Less

Submitted 5 July, 2022; v1 submitted 11 August, 2021; originally announced August 2021.

Journal ref: Nature Communications 13, 6601 (2022)

Extrinsic localized excitons in patterned 2D semiconductors

Authors: D Yagodkin, K Greben, A Eljarrat, S Kovalchuk, M Ghorbani-Asl, M Jain, S Kretschmer, N Severin, J P Rabe, A V Krasheninnikov, C T Koch, K I Bolotin

Abstract: We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state,… ▽ More We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state, which is distinguished by non-linear power dependence, survives up to room temperature and is patternable down to 20 nm resolution. We probe the response of the new exciton to the changes of electron energy, nanomechanical cleaning, and encapsulation via multiple microscopic, spectroscopic, and computational techniques. All these approaches suggest that the state does not originate from irradiation-induced structural defects or spatially non-uniform strain, as commonly assumed. Instead, we show that it is extrinsic, likely a charge transfer exciton associated with the organic substance deposited onto the 2D semiconductor. By demonstrating that structural defects are not required for the formation of localized excitons, our work opens new possibilities for further understanding of these states and using them for example in chemical sensing and quantum technologies. △ Less

Submitted 29 March, 2022; v1 submitted 28 May, 2021; originally announced May 2021.

Spin/valley coupled dynamics of electrons and holes at the ${\text{MoS}_{2}-\text{MoSe}_{2}}$ interface

Authors: Abhijeet Kumar, Denis Yagodkin, Nele Stetzuhn, Sviatoslav Kovalchuk, Alexey Melnikov, Peter Elliott, Sangeeta Sharma, Cornelius Gahl, Kirill I. Bolotin

Abstract: The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical pumping of spin/valley polarized carriers across the interface and to elucidate the mechanisms governing their subsequent relaxation. By applying time-resolved… ▽ More The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical pumping of spin/valley polarized carriers across the interface and to elucidate the mechanisms governing their subsequent relaxation. By applying time-resolved Kerr and reflectivity spectroscopies, we find that the photoexcited carriers conserve their spin for both tunneling directions across the interface. Following this, we measure dramatically different spin/valley depolarization rates for electrons and holes, $\sim 30\,{\text{ns}}^{-1}$ and $< 1\,{\text{ns}}^{-1}$, respectively and show that this difference relates to the disparity in the spin-orbit splitting in conduction and valence bands of TMDs. Our work provides insights into the spin/valley dynamics of free carriers unaffected by complex excitonic processes and establishes TMD heterostructures as generators of spin currents in spin/valleytronic devices. △ Less

Submitted 9 July, 2021; v1 submitted 17 March, 2021; originally announced March 2021.

Comments: 15 + 6 pages; 4 + 3 figures

Tunable graphene phononic crystal

Authors: Jan N. Kirchhof, Kristina Weinel, Sebastian Heeg, Victor Deinhart, Sviatoslav Kovalchuk, Katja Hoeflich, Kirill I. Bolotin

Abstract: In the field of phononics, periodic patterning controls vibrations and thereby the flow of heat and sound in matter. Bandgaps arising in such phononic crystals realize low-dissipation vibrational modes and enable applications towards mechanical qubits, efficient waveguides, and state-of-the-art sensing. Here, we combine phononics and two-dimensional materials and explore the possibility of manipul… ▽ More In the field of phononics, periodic patterning controls vibrations and thereby the flow of heat and sound in matter. Bandgaps arising in such phononic crystals realize low-dissipation vibrational modes and enable applications towards mechanical qubits, efficient waveguides, and state-of-the-art sensing. Here, we combine phononics and two-dimensional materials and explore the possibility of manipulating phononic crystals via applied mechanical pressure. To this end, we fabricate the thinnest possible phononic crystal from monolayer graphene and simulate its vibrational properties. We find a bandgap in the MHz regime, within which we localize a defect mode with a small effective mass of 0.72 ag = 0.002 $m_{physical}$. Finally, we take advantage of graphene's flexibility and mechanically tune a finite size phononic crystal. Under electrostatic pressure up to 30 kPa, we observe an upshift in frequency of the entire phononic system by more than 350%. At the same time, the defect mode stays within the bandgap and remains localized, suggesting a high-quality, dynamically tunable mechanical system. △ Less

Submitted 25 February, 2021; v1 submitted 30 November, 2020; originally announced November 2020.

Comments: 19 pages, 4 figures; Supplementary Information of additional 19 pages and 9 figures

In situ functionalization of graphene

Authors: Kyrylo Greben, Sviatoslav Kovalchuk, Ana M. Valencia, Jan N. Kirchhof, Sebastian Heeg, Philipp Rietsch, Stephanie Reich, Caterina Cocchi, Siegfried Eigler, Kirill I. Bolotin

Abstract: While the basal plane of graphene is inert, defects in it are centers of chemical activity. An attractive application of such defects is towards controlled functionalization of graphene with foreign molecules. However, the interaction of the defects with reactive environment, such as ambient, decreases the efficiency of functionalization and makes it poorly controlled. Here, we report a novel appr… ▽ More While the basal plane of graphene is inert, defects in it are centers of chemical activity. An attractive application of such defects is towards controlled functionalization of graphene with foreign molecules. However, the interaction of the defects with reactive environment, such as ambient, decreases the efficiency of functionalization and makes it poorly controlled. Here, we report a novel approach to generate, monitor with time resolution, and functionalize the defects $\textit{in situ}$ without ever exposing them to the ambient. The defects are generated by an energetic Argon plasma and their properties are monitored using $\textit{in situ}$ Raman spectroscopy. We find that these defects are functional, very reactive, and strongly change their density from $\approx 1\cdot10^{13} cm^{-2}$ to $\approx 5\cdot10^{11} cm^{-2}$ upon exposure to air. We perform the proof of principle $\textit{in situ}$ functionalization by generating defects using the Argon plasma and functionalizing them $\textit{in situ}$ using Ammonia functional. The functionalization induces the n-doping with a carrier density up to $5\cdot10^{12} cm^{-2}$ in graphene and remains stable in ambient conditions. △ Less

Submitted 27 September, 2020; originally announced September 2020.

Comments: 12 pages, 4 figures, including Supplementary Information with 6 pages, 6 figures and 1 table

Ultrafast photocurrents in MoSe$_2$ probed by terahertz spectroscopy

Authors: Denis Yagodkin, Lukas Nadvornik, Oliver Gueckstock, Cornelius Gahl, Tobias Kampfrath, Kirill I. Bolotin

Abstract: We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30\,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond… ▽ More We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30\,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond timescale by out-of-plane currents due to the drift of photoexcited charge carriers in the surface electric field. The BL emission is generated by an in-plane shift current. Finally, we observe oscillations at about $23\,$THz in the emission from the BL sample. We attribute the oscillations to quantum beats between two excitonic states with energetic separation of $\sim100\,$meV. △ Less

Submitted 21 December, 2020; v1 submitted 27 August, 2020; originally announced August 2020.

Comments: This is the Accepted Manuscript version of an article accepted for publication in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1583/abd527 7 pages, 9 figures

Limits of funneling efficiency in non-uniformly strained 2D semiconductors

Authors: Moshe G. Harats, Kirill I. Bolotin

Abstract: Photoexcited electron-hole pairs (excitons) in transition metal dichalcogenides (TMDC) experience an effective force when these materials are non-uniformly strained. In the case of strain produced by a sharp tip pressing at the center of a suspended TMDC membrane, the excitons are transported to the point of the highest strain at the center of the membrane. This effect, exciton funneling, can be u… ▽ More Photoexcited electron-hole pairs (excitons) in transition metal dichalcogenides (TMDC) experience an effective force when these materials are non-uniformly strained. In the case of strain produced by a sharp tip pressing at the center of a suspended TMDC membrane, the excitons are transported to the point of the highest strain at the center of the membrane. This effect, exciton funneling, can be used to increase photoconversion efficiency in TMDC, to explore exciton transport, and to study correlated states of excitons arising at their high densities. Here, we analyze the limits of funneling efficiency in realistic device geometries. The funneling efficiency in realistic monolayer TMDCs is found to be low, $ <5 \;\%$ both at room and low temperatures. This results from dominant diffusion at room temperature and short exciton lifetimes at low temperatures. On the other hand, in TMDC heterostructures with long exciton lifetimes the funneling efficiency reaches $\sim 50\;\%$ at room temperature, as the exciton density reaches thermal equilibrium in the funnel. Finally, we show that Auger recombination limits funneling efficiency for intense illumination sources. △ Less

Submitted 8 June, 2020; originally announced June 2020.

Comments: 7 pages, 4 figures

Neutral and charged excitons interplay in non-uniformly strain-engineered WS$_2$

Authors: Sviatoslav Kovalchuk, Moshe G. Harats, Guillermo López-Polín, Jan N. Kirchhof, Katja Höflich, Kirill I. Bolotin

Abstract: We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large ($>2\;\%$), strongly non-uniform ($>0.28\;\%/μm$), and in-situ tunable strain is induced in the monolayer by pressurizing it with inert gas. We observe peak shift… ▽ More We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large ($>2\;\%$), strongly non-uniform ($>0.28\;\%/μm$), and in-situ tunable strain is induced in the monolayer by pressurizing it with inert gas. We observe peak shifts and spectral shape changes in the photoluminescence spectra of strained WS$_2$. We interpret these changes as a signature of increased free electron density and resulting conversion of neutral excitons to trions in the region of high strain. Our result establishes non-uniform strain engineering as a novel and useful experimental `knob' for tuning optoelectronic properties of 2D semiconductors. △ Less

Submitted 15 January, 2020; originally announced January 2020.

Comments: 12 pages, 5 figures

Intrinsic and Extrinsic Defect-related Excitons in TMDCs

Authors: Kyrylo Greben, Sonakshi Arora, Moshe G. Harats, Kirill I. Bolotin

Abstract: We investigate an excitonic peak appearing in low-temperature photoluminescence of monolayer transition metal dichalcogenides (TMDCs), which is commonly associated with defects and disorder. First, to uncover the intrinsic origin of defect-related excitons, we study their dependence on gate voltage, excitation power, and temperature in a prototypical TMDC monolayer, $MoS_2$. We show that the entir… ▽ More We investigate an excitonic peak appearing in low-temperature photoluminescence of monolayer transition metal dichalcogenides (TMDCs), which is commonly associated with defects and disorder. First, to uncover the intrinsic origin of defect-related excitons, we study their dependence on gate voltage, excitation power, and temperature in a prototypical TMDC monolayer, $MoS_2$. We show that the entire range of behaviors of defect-related excitons can be understood in terms of a simple model, where neutral excitons are bound to ionized donor levels, likely related to sulphur vacancies, with a density of $7\cdot10^{11} cm^{-2}$. Second, to study the extrinsic origin of defect-related excitons, we controllably deposit oxygen molecules in-situ onto the surface of $MoS_2$ kept at cryogenic temperature. We find that in addition to trivial p-doping of $3\cdot10^{12} cm^{-2}$, oxygen affects the formation of defect-related excitons by functionalizing the vacancy. Combined, our results uncover the origin of defect-related excitons, suggest a simple and conclusive approach to track the functionalization of TMDCs, benchmark device quality, and pave the way towards exciton engineering in hybrid organic-inorganic TMDC devices. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Comments: 15 pages, 4 figures, including Supplementary information with 6 pages and 5 figures

Dynamics and efficient conversion of excitons to trions in non-uniformly strained monolayer WS$_2$

Authors: Moshe G. Harats, Jan N. Kirchhof, Mengxiong Qiao, Kyrylo Greben, Kirill I. Bolotin

Abstract: We investigate the transport of excitons and trions in monolayer semiconductor WS$_2$ subjected to controlled non-uniform mechanical strain. We actively control and tune the strain profiles with an AFM-based setup in which the monolayer is indented by an AFM tip. Optical spectroscopy is used to reveal the dynamics of the excited carriers. The non-uniform strain configuration locally changes the va… ▽ More We investigate the transport of excitons and trions in monolayer semiconductor WS$_2$ subjected to controlled non-uniform mechanical strain. We actively control and tune the strain profiles with an AFM-based setup in which the monolayer is indented by an AFM tip. Optical spectroscopy is used to reveal the dynamics of the excited carriers. The non-uniform strain configuration locally changes the valence and conduction bands of WS$_2$, giving rise to effective forces attracting excitons and trions towards the point of maximum strain underneath the AFM tip. We observe large changes in the photoluminescence spectra of WS$_2$ under strain, which we interpret using a drift-diffusion model. We show that the transport of neutral excitons, a process that was previously thought to be efficient in non-uniformly strained 2D semiconductors and termed as "funneling", is negligible at room temperature in contrast to previous observations. Conversely, we discover that redistribution of free carriers under non-uniform strain profiles leads to highly efficient conversion of excitons to trions. Conversion efficiency reaches $\simeq 100\%$ even without electrical gating. Our results explain inconsistencies in previous experiments and pave the way towards new types of optoelectronic devices. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Comments: 6 pages, 4 figures

Microstructure and Elastic Constants of Transition Metal Dichalcogenide Monolayers from Friction and Shear Force Microscopy

Authors: Xiaomin Xu, Thorsten Schultz, Ziyu Qin, Nikolai Severin, Benedikt Haas, Sumin Shen, Jan N. Kirchhof, Andreas Opitz, Christoph T. Koch, Kirill Bolotin, Jürgen P. Rabe, Goki Eda, Norbert Koch

Abstract: Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. Here we demonstrate how grain boundaries, crystal orientation, and strain fields can unambiguously… ▽ More Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. Here we demonstrate how grain boundaries, crystal orientation, and strain fields can unambiguously be identified with combined lateral force microscopy (LFM) and transverse shear microscopy (TSM) for CVD-grown tungsten disulfide (WS2) monolayers, on length scales that are relevant for optoelectronic applications. Further, angle-dependent TSM measurements enable us to acquire the fourth-order elastic constants of monolayer WS2 experimentally. Our results facilitate high-throughput and nondestructive microstructure visualization of monolayer TMDCs, insights into their elastic properties, thus providing an accessible tool to support the development of advanced optoelectronic devices based on such two-dimensional semiconductors. △ Less

Submitted 21 August, 2019; originally announced August 2019.

Journal ref: Advanced Materials 30 1803748 (2018)

Giant Tunable Mechanical Nonlinearity in Graphene-Silicon Nitride Hybrid Resonator

Authors: Rajan Singh, Arnab Sarkar, Chitres Guria, Ryan J. T. Nicholl, Sagar Chakraborty, Kirill I. Bolotin, Saikat Ghosh

Abstract: High quality factor mechanical resonators have shown great promise in developing classical or quantum technologies. Simultaneously, progress has been made in developing controlled mechanical nonlinearity. Here we combine these two directions of progress in a single platform consisting of coupled Silicon Nitride (SiNx) and graphene mechanical resonators. We show that nonlinear response can be induc… ▽ More High quality factor mechanical resonators have shown great promise in developing classical or quantum technologies. Simultaneously, progress has been made in developing controlled mechanical nonlinearity. Here we combine these two directions of progress in a single platform consisting of coupled Silicon Nitride (SiNx) and graphene mechanical resonators. We show that nonlinear response can be induced on a large area SiNx resonator mode and can be efficiently controlled by coupling it to a gate-tunable, freely suspended graphene mode. The induced nonlinear response of the hybrid modes, as measured on the SiNx resonator surface is giant, with one of the highest measured Duffing constants. We observe a novel phononic frequency comb which we use as an alternate validation of the measured values, along with numerical simulations which are in overall agreement with measurements. △ Less

Submitted 23 June, 2020; v1 submitted 2 April, 2019; originally announced April 2019.

Atomic-Resolution Visualization and Doping Effects of Complex Structures in Intercalated Bilayer Graphene

Authors: Jason P. Bonacum, Andrew O'Hara, De-Liang Bao, Oleg S. Ovchinnikov, Yan-Fang Zhang, Georgy Gordeev, Sonakshi Arora, Stephanie Reich, Juan-Carlos Idrobo, Richard F. Haglund, Sokrates T. Pantelides, Kirill Bolotin

Abstract: Molecules intercalating two-dimensional (2D) materials form complex structures that have been mostly characterized by spatially averaged techniques. Here we use aberration-corrected scanning transmission electron microscopy and density-functional-theory (DFT) calculations to study the atomic structure of bilayer graphene (BLG) and few-layer graphene (FLG) intercalated with FeCl$_3$. In BLG we disc… ▽ More Molecules intercalating two-dimensional (2D) materials form complex structures that have been mostly characterized by spatially averaged techniques. Here we use aberration-corrected scanning transmission electron microscopy and density-functional-theory (DFT) calculations to study the atomic structure of bilayer graphene (BLG) and few-layer graphene (FLG) intercalated with FeCl$_3$. In BLG we discover two distinct intercalated structures that we identify as monolayer-FeCl$_3$ and monolayer-FeCl$_2$. The two structures are separated by atomically sharp boundaries and induce large but different free-carrier densities in the graphene layers, $7.1\times10^{13}$ cm$^{-2}$ and $7.1\times10^{13}$ cm$^{-2}$ respectively. In FLG, we observe multiple FeCl$_3$ layers stacked in a variety of possible configurations with respect to one another. Finally, we find that the microscope's electron beam can convert the FeCl$_3$ monolayer into FeOCl monolayers in a rectangular lattice. These results reveal the need for a combination of atomically-resolved microscopy, spectroscopy, and DFT calculations to identify intercalated structures and study their properties. △ Less

Submitted 2 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. Materials 3, 064004 (2019)

Motion transduction with thermo-mechanically squeezed graphene resonator modes

Authors: Rajan Singh, Ryan J. T. Nicholl, Kirill Bolotin, Saikat Ghosh

Abstract: There is a recent surge of interest in amplification and detection of tiny motion in the growing field of opto and electro mechanics. Here, we demonstrate widely tunable, broad bandwidth and high gain all-mechanical motion amplifiers based on graphene/Silicon Nitride (SiNx) hybrids. In these devices, a tiny motion of a large-area SiNx membrane is transduced to a much larger motion in a graphene dr… ▽ More There is a recent surge of interest in amplification and detection of tiny motion in the growing field of opto and electro mechanics. Here, we demonstrate widely tunable, broad bandwidth and high gain all-mechanical motion amplifiers based on graphene/Silicon Nitride (SiNx) hybrids. In these devices, a tiny motion of a large-area SiNx membrane is transduced to a much larger motion in a graphene drum resonator coupled to SiNx. Furthermore, the thermal noise of graphene is reduced (squeezed) through parametric tension modulation. The parameters of the amplifier are measured by photothermally actuating SiNx and interferometrically detecting graphene displacement. We obtain displacement power gain of 38 dB and demonstrate 4.7 dB of squeezing resulting in a detection sensitivity of 3.8 fm per square root Hz, close to the thermal noise limit of SiNx. △ Less

Submitted 23 October, 2018; v1 submitted 13 May, 2018; originally announced May 2018.

Comments: 7 pages, 4 figures and supplementary information

Hidden area and mechanical nonlinearities in freestanding graphene

Authors: Ryan J. T. Nicholl, Nickolay V. Lavrik, Ivan Vlassiouk, Bernadeta R. Srijanto, Kirill I. Bolotin

Abstract: We investigated the effect of out-of-plane crumpling on the mechanical response of graphene membranes. In our experiments, stress was applied to graphene membranes using pressurized gas while the strain state was monitored through two complementary techniques: interferometric profilometry and Raman spectroscopy. By comparing the data obtained through these two techniques, we determined the geometr… ▽ More We investigated the effect of out-of-plane crumpling on the mechanical response of graphene membranes. In our experiments, stress was applied to graphene membranes using pressurized gas while the strain state was monitored through two complementary techniques: interferometric profilometry and Raman spectroscopy. By comparing the data obtained through these two techniques, we determined the geometric hidden area which quantifies the crumpling strength. While the devices with hidden area $\sim0~\%$ obeyed linear mechanics with biaxial stiffness $428\pm10$ N/m, specimens with hidden area in the range $0.5-1.0~\%$ were found to obey an anomalous Hooke's law with an exponent $\sim0.1$. △ Less

Submitted 22 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Lett. 118, 266101 (2017)

Controlled dynamic screening of excitonic complexes in 2D semiconductors

Authors: Andrey R. Klots, Benjamin Weintrub, Dhiraj Prasai, Daniel Kidd, Kalman Varga, Kirill A. Velizhanin, Kirill I. Bolotin

Abstract: We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of th… ▽ More We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of the dynamic screening is then reduced to simply solving the Schrodinger equation with an effectively frequency-independent potential. Quantitative predictions of the model are experimentally verified using a test system: neutral, charged and defect-bound excitons in two-dimensional monolayer WS2, screened by metallic, liquid, and semiconducting environments. The screening-induced shifts of the excitonic peaks in photoluminescence spectra are in good agreement with our model. △ Less

Submitted 14 March, 2017; originally announced March 2017.

Nonlinear optical conductivity of a generic two band systems, with application to doped and gapped graphene

Authors: Ashutosh Singh, Tuhina Satpati, Kirill I. Bolotin, Saikat Ghosh, Amit Agarwal

Abstract: We present a general formulation to calculate the dynamic optical conductivity, beyond the linear response regime, of any electronic system whose quasiparticle dispersion is described by a two band model. Our phenomenological model is based on the optical Bloch equations. In the steady state regime it yields an analytic solution for the population inversion and the interband coherence, which are n… ▽ More We present a general formulation to calculate the dynamic optical conductivity, beyond the linear response regime, of any electronic system whose quasiparticle dispersion is described by a two band model. Our phenomenological model is based on the optical Bloch equations. In the steady state regime it yields an analytic solution for the population inversion and the interband coherence, which are nonlinear in the optical field intensity, including finite doping and temperature effects. We explicitly show that the optical nonlinearities are controlled by a single dimensionless parameter which is directly proportional to the incident field strength and inversely proportional to the optical frequency. This identification leads to a unified way to study the dynamical conductivity and the differential transmission spectrum across a wide range of optical frequencies, and optical field strength. We use our formalism to analytically calculate the nonlinear optical conductivity of doped and gapped graphene, deriving the well known universal ac conductivity of $σ_0={e^2}/4\hbar$ in the linear response regime of low optical intensities (or equivalently high frequencies) and non-linear deviations from it which appear at high laser intensities (or low frequencies) including the impact of finite doping and band-gap opening. △ Less

Submitted 16 June, 2016; originally announced June 2016.

Comments: 12 pages, 6 figures; Criticism/Comments are welcome

Journal ref: Phys. Rev. B 95, 155421 (2017)

Field-induced dissociation of excitons in two-dimensional MoS$_{2}$/hBN heterostructures

Authors: Sten Haastrup, Simone Latini, Kirill Bolotin, Kristian Sommer Thygesen

Abstract: Atomically thin semi-conductors are characterized by strongly bound excitons which govern the optical properties of the materials below and near the band edge. Efficient conversion of photons into electrical current requires, as a first step, the dissociation of the exciton into free electrons and holes. Here we calculate the dissociation rates of excitons in monolayer MoS$_2$ as a function of an… ▽ More Atomically thin semi-conductors are characterized by strongly bound excitons which govern the optical properties of the materials below and near the band edge. Efficient conversion of photons into electrical current requires, as a first step, the dissociation of the exciton into free electrons and holes. Here we calculate the dissociation rates of excitons in monolayer MoS$_2$ as a function of an applied in-plane electric field. The dissociation rates are obtained as the inverse lifetime of the resonant states of a two-dimensional Hydrogenic Hamiltonian which describes the exciton within the Mott-Wannier model. The resonances are computed using complex scaling, and the effective masses and screened electron-hole interaction defining the Hydrogenic Hamiltonian are computed from first-principles. For field strengths above 0.1 V/nm the dissociation lifetime is shorter than 1 picosecond, which is shorter than the lifetime of other, competing, decay mechanisms. Interestingly, encapsulation of the \moly layer in just two layers of hBN, enhances the dissociation rate by around one order of magnitude due to the increased screening showing that dielectric engineering is an effective way to control exciton lifetimes in two-dimensional materials. △ Less

Submitted 12 February, 2016; originally announced February 2016.

Comments: 6 pages, 4 figures

The Effect of Intrinsic Crumpling on the Mechanics of Free-Standing Graphene

Authors: Ryan J. T. Nicholl, Hiram J. Conley, Nickolay V. Lavrik, Ivan Vlassiouk, Yevgeniy S. Puzyrev, Vijayashree Parsi Sreenivas, Sokrates T. Pantelides, Kirill I. Bolotin

Abstract: Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. We explore the consequences of this crumpling on the effective mechanical constants of graphene. We develop a sensitive experimental approach to probe stretching of graphene membranes under low applied stress at cryogenic to room temperatures. We find that the in-plane… ▽ More Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. We explore the consequences of this crumpling on the effective mechanical constants of graphene. We develop a sensitive experimental approach to probe stretching of graphene membranes under low applied stress at cryogenic to room temperatures. We find that the in-plane stiffness of graphene is between 20 and 100 N/m at room temperature, much smaller than 340 N/m (the value expected for flat graphene). Moreover, while the in-plane stiffness only increases moderately when the devices are cooled down to 10 K, it approaches 300 N/m when the aspect ratio of graphene membranes is increased. These results indicate that softening of graphene at temperatures less than 400 K is caused by static wrinkling, with only a small contribution due to flexural phonons. Together, these results explain the large variation in reported mechanical constants of graphene devices and paves the way towards controlling their mechanical properties. △ Less

Submitted 6 November, 2015; originally announced November 2015.

Comments: 9 pages, 5 figures

Journal ref: Nature Communications 6, 8789 (2015)

Electrical control of near-field energy transfer between quantum dots and 2D semiconductors

Authors: Dhiraj Prasai, Andrey R. Klots, A. K. M. Newaz, J. Scott Niezgoda, Noah J. Orfield, Carlos A. Escobar, Alex Wynn, Anatoly Efimov, G. Kane Jennings, Sandra J. Rosenthal, Kirill I. Bolotin

Abstract: We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Förster resonant energy transfer (FRET) from QDs int… ▽ More We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 lead to large (~500%) changes in the FRET rate. This, in turn, allows for up to ~75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Comments: 19 Pages, 11 figures. Main text and supporting information. Nano Letters, 2015, Article ASAP

Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy

Authors: A. R. Klots, A. K. M. Newaz, Bin Wang, D. Prasai, H. Krzyzanowska, D. Caudel, N. J. Ghimire, J. Yan, B. L. Ivanov, K. A. Velizhanin, A. Burger, D. G. Mandrus, N. H. Tolk, S. T. Pantelides, K. I. Bolotin

Abstract: The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable… ▽ More The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable effects are strongly suppressed in suspended devices. Extremely robust (photogain >1,000) and fast (response time <1ms) photoresponse combined with the high quality of our devices allow us to study, for the first time, the formation, binding energies, and dissociation mechanisms of excitons in TMDCs through photocurrent spectroscopy. By analyzing the spectral positions of peaks in the photocurrent and by comparing them with first-principles calculations, we obtain binding energies, band gaps and spin-orbit splitting in monolayer TMDCs. For monolayer MoS2, in particular, we estimate an extremely large binding energy for band-edge excitons, Ebind > 570meV. Along with band-edge excitons, we observe excitons associated with a van Hove singularity of rather unique nature. The analysis of the source-drain voltage dependence of photocurrent spectra reveals exciton dissociation and photoconversion mechanisms in TMDCs. △ Less

Submitted 25 March, 2014; originally announced March 2014.

Comments: 12 pages, 4 figures

Journal ref: Scientific Reports 4, 6608, (2014)

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

Authors: Hiram J. Conley, Bin Wang, Jed I. Ziegler, Richard F. Haglund Jr., Sokrates T. Pantelides, Kirill I. Bolotin

Abstract: We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Grüneisen parameter of ~1.06. Second, using… ▽ More We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Grüneisen parameter of ~1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is roughly linear with strain, ~45 meV% strain for monolayer MoS2 and ~120 meV% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ~1.5%, a value supported by first-principles calculations that include excitonic effects. These observations constitute the first demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides. △ Less

Submitted 19 September, 2013; v1 submitted 16 May, 2013; originally announced May 2013.

Comments: Article appears in print in Nanoletters

Journal ref: Nano Letters, 2013, 13 (8), pp 3626-3630

High-Field Electrical and Thermal Transport in Suspended Graphene

Authors: Vincent E. Dorgan, Ashkan Behnam, Hiram J. Conley, Kirill I. Bolotin, Eric Pop

Abstract: We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak (average) thermal conductivity of 530 W/m/K (310 W/m/K), at 1000 K. The saturation velocity is 2-4 times and the thermal conductivity 10-17 times greater than in s… ▽ More We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak (average) thermal conductivity of 530 W/m/K (310 W/m/K), at 1000 K. The saturation velocity is 2-4 times and the thermal conductivity 10-17 times greater than in silicon at such elevated temperatures. However, the thermal conductivity shows a steeper decrease at high temperature than in graphite, consistent with stronger effects of second-order three-phonon scattering. Our analysis of sample-to-sample variation suggests the behavior of "cleaner" devices most closely approaches the intrinsic high-field properties of graphene. This study reveals key features of charge and heat flow in graphene up to device breakdown at ~2230 K in vacuum, highlighting remaining unknowns under extreme operating conditions. △ Less

Submitted 28 November, 2013; v1 submitted 21 February, 2013; originally announced February 2013.

Journal ref: Nano Letters 13, 4581-4586 (2013)

Electrical Control of Optical Properties of Monolayer MoS$_2$

Authors: A. K. M. Newaz, D. Prasai, J. I. Ziegler, D. Caudel, S. Robinson, R. F. Haglund Jr, K. I. Bolotin

Abstract: We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase in absorption at ~660 nm in these devices when an external gate voltage is decreased from +50 V to -50 V, while the photoluminescence wavelength rema… ▽ More We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase in absorption at ~660 nm in these devices when an external gate voltage is decreased from +50 V to -50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS$_2$ devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer devices are related to the interaction of the excitons in MoS$_2$ with charge carriers. △ Less

Submitted 1 November, 2012; originally announced November 2012.

Comments: 5 pages, 4 figures. Supplementary Material included in source files

Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment

Authors: A. K. M. Newaz, Yevgeniy S. Puzyrev, Bin Wang, Sokrates T. Pantelides, Kirill I. Bolotin

Abstract: Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor in graphene is the Coulomb scattering off of charged impurities that reside either on graphene or in the underlying substrate. This is true both for traditional gra… ▽ More Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor in graphene is the Coulomb scattering off of charged impurities that reside either on graphene or in the underlying substrate. This is true both for traditional graphene devices on SiO2 substrates and possibly for the recently reported high-mobility suspended and supported devices. An attractive approach to reduce such scattering is to place graphene in an environment with high static dielectric constant κ that would effectively screen the electric field due to the impurities. However, experiments so far report only a modest effect of high-κ environment on mobility. Here, we investigate the effect of the dielectric environment of graphene by studying electrical transport in multi-terminal graphene devices that are suspended in liquids with κ ranging from 1.9 to 33. For non-polar liquids (κ<5) we observe a rapid increase of μ with κ and report a record room-temperature mobility as large as ~60,000 cm2/Vs for graphene devices in anisole (κ=4.3), while in polar liquids (κ>18) we observe a drastic drop in mobility. We demonstrate that non-polar liquids enhance mobility by screening charged impurities adsorbed on graphene, while charged ions in polar liquids cause the observed mobility suppression. Furthermore, using molecular dynamics simulation we establish that scattering by out-of-plane flexural phonons, a dominant scattering mechanism in suspended graphene in vacuum at room temperature, is suppressed by the presence of liquids. We expect that our findings may provide avenues to control and reduce carrier scattering in future graphene-based electronic devices. △ Less

Submitted 7 March, 2012; originally announced March 2012.

Comments: To Appear in Nature Communications (2012)

Graphene Transistor as a Probe for Streaming Potential

Authors: A. K. M. Newaz, D. A. Markov, D. Prasai, K. I. Bolotin

Abstract: We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the fluid velocity and the ionic concentration. We show that these shifts are consistent with the variation of the local elec… ▽ More We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the fluid velocity and the ionic concentration. We show that these shifts are consistent with the variation of the local electrochemical potential of the liquid next to graphene that are caused by the fluid flow (streaming potential). Furthermore, we utilize the sensitivity of electrical transport in GraFETs to the parameters of the fluid flow to demonstrate graphene-based mass flow and ionic concentration sensing. We successfully detect a flow as small as~70nL/min, and detect a change in the ionic concentration as small as ~40nM. △ Less

Submitted 15 February, 2012; originally announced February 2012.

Comments: 6 pages, 4 figures

Journal ref: Nano Letter (2012)

Measurement of the ν= 1/3 fractional quantum Hall energy gap in suspended graphene

Authors: Fereshte Ghahari, Yue Zhao, Paul Cadden-Zimansky, Kirill Bolotin, Philip Kim

Abstract: We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transverse resistance plateaus are seen corresponding to fractional quantum Hall states, most strongly for ν= 1/3. By measuring the temperature dependence of… ▽ More We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transverse resistance plateaus are seen corresponding to fractional quantum Hall states, most strongly for ν= 1/3. By measuring the temperature dependence of these resistance minima, the energy gap for the 1/3 fractional state in graphene is determined to be at ~20 K at 14 T. △ Less

Submitted 7 February, 2011; v1 submitted 6 October, 2010; originally announced October 2010.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 106, 046801 (2011)

Observation of the Fractional Quantum Hall Effect in Graphene

Authors: Kirill I. Bolotin, Fereshte Ghahari, Michael D. Shulman, Horst L. Stormer, Philip Kim

Abstract: When electrons are confined in two dimensions and subjected to strong magnetic fields, the Coulomb interactions between them become dominant and can lead to novel states of matter such as fractional quantum Hall liquids. In these liquids electrons linked to magnetic flux quanta form complex composite quasipartices, which are manifested in the quantization of the Hall conductivity as rational fra… ▽ More When electrons are confined in two dimensions and subjected to strong magnetic fields, the Coulomb interactions between them become dominant and can lead to novel states of matter such as fractional quantum Hall liquids. In these liquids electrons linked to magnetic flux quanta form complex composite quasipartices, which are manifested in the quantization of the Hall conductivity as rational fractions of the conductance quantum. The recent experimental discovery of an anomalous integer quantum Hall effect in graphene has opened up a new avenue in the study of correlated 2D electronic systems, in which the interacting electron wavefunctions are those of massless chiral fermions. However, due to the prevailing disorder, graphene has thus far exhibited only weak signatures of correlated electron phenomena, despite concerted experimental efforts and intense theoretical interest. Here, we report the observation of the fractional quantum Hall effect in ultraclean suspended graphene, supporting the existence of strongly correlated electron states in the presence of a magnetic field. In addition, at low carrier density graphene becomes an insulator with an energy gap tunable by magnetic field. These newly discovered quantum states offer the opportunity to study a new state of matter of strongly correlated Dirac fermions in the presence of large magnetic fields. △ Less

Submitted 14 October, 2009; originally announced October 2009.

Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout

Authors: Changyao Chen, Sami Rosenblatt, Kirill I. Bolotin, William Kalb, Philip Kim, Ioannis Kymissis, Horst L. Stormer, Tony F. Heinz, James Hone

Abstract: The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to changes in mass and temperature. The devices show resonances in the MHz range. The strong dependence of the resonant frequency on applied gate voltage can be fit t… ▽ More The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to changes in mass and temperature. The devices show resonances in the MHz range. The strong dependence of the resonant frequency on applied gate voltage can be fit to a membrane model, which yields the mass density and built-in strain. Upon removal and addition of mass, we observe changes in both the density and the strain, indicating that adsorbates impart tension to the graphene. Upon cooling, the frequency increases; the shift rate can be used to measure the unusual negative thermal expansion coefficient of graphene. The quality factor increases with decreasing temperature, reaching ~10,000 at 5 K. By establishing many of the basic attributes of monolayer graphene resonators, these studies lay the groundwork for applications, including high-sensitivity mass detectors. △ Less

Submitted 31 August, 2009; v1 submitted 21 July, 2009; originally announced July 2009.

Journal ref: Nature Nanotechnology 4 (12), 861-867, 2009

Measurement of discrete energy-level spectra in individual chemically-synthesized gold nanoparticles

Authors: F. Kuemmeth, K. I. Bolotin, S. -F. Shi, D. C. Ralph

Abstract: We form single-electron transistors from individual chemically-synthesized gold nanoparticles, 5-15 nm in diameter, with monolayers of organic molecules serving as tunnel barriers. These devices allow us to measure the discrete electronic energy levels of individual gold nanoparticles that are, by virtue of chemical synthesis, well-defined in their composition, size and shape. We show that the n… ▽ More We form single-electron transistors from individual chemically-synthesized gold nanoparticles, 5-15 nm in diameter, with monolayers of organic molecules serving as tunnel barriers. These devices allow us to measure the discrete electronic energy levels of individual gold nanoparticles that are, by virtue of chemical synthesis, well-defined in their composition, size and shape. We show that the nanoparticles are non-magnetic and have spectra in good accord with random-matrix-theory predictions taking into account strong spin-orbit coupling. △ Less

Submitted 16 December, 2008; v1 submitted 3 September, 2008; originally announced September 2008.

Comments: 15 pages, 5 figures; corrected typos, added journal reference

Journal ref: Nano Lett., 8 (12), 4506-4512 (2008)

Temperature dependent transport in suspended graphene

Authors: K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer, P. Kim

Abstract: The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11 cm^-2, the resistivity increases with increasing T and is linear above 50K, suggesting carrier scattering from acoustic phonons. At T=240K the mobility is ~120,00… ▽ More The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11 cm^-2, the resistivity increases with increasing T and is linear above 50K, suggesting carrier scattering from acoustic phonons. At T=240K the mobility is ~120,000 cm^2/Vs, higher than in any known semiconductor. At the charge neutral point we observe a non-universal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10^8 cm^-2. △ Less

Submitted 13 May, 2008; originally announced May 2008.

Ultrahigh electron mobility in suspended graphene

Authors: K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. L. Stormer

Abstract: We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a sign… ▽ More We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport. Concomitant with large mobility enhancement, the widths of the characteristic Dirac peaks are reduced by a factor of 10 compared to traditional, non-suspended devices. This advance should allow for accessing the intrinsic transport properties of graphene. △ Less

Submitted 27 May, 2008; v1 submitted 17 February, 2008; originally announced February 2008.

Comments: 4 pages, 3 figures, references updated

Journal ref: Solid State Communications 146, 351-355 (2008)

Measurement of Scattering Rate and Minimum Conductivity in Graphene

Authors: Y. -W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, P. Kim

Abstract: The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from $2-15\times 10^{11}$ cm$^{-2}$. In the low c… ▽ More The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from $2-15\times 10^{11}$ cm$^{-2}$. In the low carrier density limit, the conductivity exhibits values in the range of $2-12e^2/h$, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short range disorder whereas low mobility samples are dominated by long range scatterers. △ Less

Submitted 12 July, 2007; originally announced July 2007.

Comments: 4 pages 4 figures

Journal ref: Phys. Rev. Lett. 99, 246803 (2007)

Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions

Authors: Kirill I. Bolotin, Ferdinand Kuemmeth, D. C. Ralph

Abstract: We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to… ▽ More We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference. △ Less

Submitted 30 June, 2006; v1 submitted 9 February, 2006; originally announced February 2006.

Comments: 4 pages, 4 figures. Changes in response to reviewer comments. New data provide information about the mechanism causing the AMR and TAMR

Journal ref: Physical Review Letters 97, 127202 (2006)

From ballistic transport to tunneling in electromigrated ferromagnetic breakjunctions

Authors: Kirill I. Bolotin, F. Kuemmeth, Abhay N. Pasupathy, D. C. Ralph

Abstract: We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 nm to the atomic scale and eventually to the tunneling regime by means of electromigration. These devices are mechanically stable against magnetostriction and magnetostatic effects. We measure magnetoresistances ~ 0.3% for 100*30 nm^2 constrictions, increasing to a maximum of 80% for ato… ▽ More We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 nm to the atomic scale and eventually to the tunneling regime by means of electromigration. These devices are mechanically stable against magnetostriction and magnetostatic effects. We measure magnetoresistances ~ 0.3% for 100*30 nm^2 constrictions, increasing to a maximum of 80% for atomic-scale widths. These results are consistent with a geometrically-constrained domain wall trapped at the constriction. For the devices in the tunneling regime we observe large fluctuations in MR, between -10 and 85%. △ Less

Submitted 15 October, 2005; originally announced October 2005.

Comments: 4 pages, 5 figures

Journal ref: Nano Letters 6, 123-127 (2006)

Metal-nanoparticle single-electron transistors fabricated using electromigration

Authors: K. I. Bolotin, F. Kuemmeth, A. N. Pasupathy, D. C. Ralph

Abstract: We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten c… ▽ More We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5-15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its charge state is varied. △ Less

Submitted 24 October, 2003; originally announced October 2003.

Comments: 3 pages, 3 figures, submitted to APL

Journal ref: K.I. Bolotin et al, APL 84, 3154 (2004)