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Limits of funneling efficiency in non-uniformly strained 2D semiconductors
Authors:
Moshe G. Harats,
Kirill I. Bolotin
Abstract:
Photoexcited electron-hole pairs (excitons) in transition metal dichalcogenides (TMDC) experience an effective force when these materials are non-uniformly strained. In the case of strain produced by a sharp tip pressing at the center of a suspended TMDC membrane, the excitons are transported to the point of the highest strain at the center of the membrane. This effect, exciton funneling, can be u…
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Photoexcited electron-hole pairs (excitons) in transition metal dichalcogenides (TMDC) experience an effective force when these materials are non-uniformly strained. In the case of strain produced by a sharp tip pressing at the center of a suspended TMDC membrane, the excitons are transported to the point of the highest strain at the center of the membrane. This effect, exciton funneling, can be used to increase photoconversion efficiency in TMDC, to explore exciton transport, and to study correlated states of excitons arising at their high densities. Here, we analyze the limits of funneling efficiency in realistic device geometries. The funneling efficiency in realistic monolayer TMDCs is found to be low, $ <5 \;\%$ both at room and low temperatures. This results from dominant diffusion at room temperature and short exciton lifetimes at low temperatures. On the other hand, in TMDC heterostructures with long exciton lifetimes the funneling efficiency reaches $\sim 50\;\%$ at room temperature, as the exciton density reaches thermal equilibrium in the funnel. Finally, we show that Auger recombination limits funneling efficiency for intense illumination sources.
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Submitted 8 June, 2020;
originally announced June 2020.
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Neutral and charged excitons interplay in non-uniformly strain-engineered WS$_2$
Authors:
Sviatoslav Kovalchuk,
Moshe G. Harats,
Guillermo López-Polín,
Jan N. Kirchhof,
Katja Höflich,
Kirill I. Bolotin
Abstract:
We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large ($>2\;\%$), strongly non-uniform ($>0.28\;\%/μm$), and in-situ tunable strain is induced in the monolayer by pressurizing it with inert gas. We observe peak shift…
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We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large ($>2\;\%$), strongly non-uniform ($>0.28\;\%/μm$), and in-situ tunable strain is induced in the monolayer by pressurizing it with inert gas. We observe peak shifts and spectral shape changes in the photoluminescence spectra of strained WS$_2$. We interpret these changes as a signature of increased free electron density and resulting conversion of neutral excitons to trions in the region of high strain. Our result establishes non-uniform strain engineering as a novel and useful experimental `knob' for tuning optoelectronic properties of 2D semiconductors.
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Submitted 15 January, 2020;
originally announced January 2020.
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Intrinsic and Extrinsic Defect-related Excitons in TMDCs
Authors:
Kyrylo Greben,
Sonakshi Arora,
Moshe G. Harats,
Kirill I. Bolotin
Abstract:
We investigate an excitonic peak appearing in low-temperature photoluminescence of monolayer transition metal dichalcogenides (TMDCs), which is commonly associated with defects and disorder. First, to uncover the intrinsic origin of defect-related excitons, we study their dependence on gate voltage, excitation power, and temperature in a prototypical TMDC monolayer, $MoS_2$. We show that the entir…
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We investigate an excitonic peak appearing in low-temperature photoluminescence of monolayer transition metal dichalcogenides (TMDCs), which is commonly associated with defects and disorder. First, to uncover the intrinsic origin of defect-related excitons, we study their dependence on gate voltage, excitation power, and temperature in a prototypical TMDC monolayer, $MoS_2$. We show that the entire range of behaviors of defect-related excitons can be understood in terms of a simple model, where neutral excitons are bound to ionized donor levels, likely related to sulphur vacancies, with a density of $7\cdot10^{11} cm^{-2}$. Second, to study the extrinsic origin of defect-related excitons, we controllably deposit oxygen molecules in-situ onto the surface of $MoS_2$ kept at cryogenic temperature. We find that in addition to trivial p-doping of $3\cdot10^{12} cm^{-2}$, oxygen affects the formation of defect-related excitons by functionalizing the vacancy. Combined, our results uncover the origin of defect-related excitons, suggest a simple and conclusive approach to track the functionalization of TMDCs, benchmark device quality, and pave the way towards exciton engineering in hybrid organic-inorganic TMDC devices.
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Submitted 27 December, 2019;
originally announced December 2019.
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Dynamics and efficient conversion of excitons to trions in non-uniformly strained monolayer WS$_2$
Authors:
Moshe G. Harats,
Jan N. Kirchhof,
Mengxiong Qiao,
Kyrylo Greben,
Kirill I. Bolotin
Abstract:
We investigate the transport of excitons and trions in monolayer semiconductor WS$_2$ subjected to controlled non-uniform mechanical strain. We actively control and tune the strain profiles with an AFM-based setup in which the monolayer is indented by an AFM tip. Optical spectroscopy is used to reveal the dynamics of the excited carriers. The non-uniform strain configuration locally changes the va…
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We investigate the transport of excitons and trions in monolayer semiconductor WS$_2$ subjected to controlled non-uniform mechanical strain. We actively control and tune the strain profiles with an AFM-based setup in which the monolayer is indented by an AFM tip. Optical spectroscopy is used to reveal the dynamics of the excited carriers. The non-uniform strain configuration locally changes the valence and conduction bands of WS$_2$, giving rise to effective forces attracting excitons and trions towards the point of maximum strain underneath the AFM tip. We observe large changes in the photoluminescence spectra of WS$_2$ under strain, which we interpret using a drift-diffusion model. We show that the transport of neutral excitons, a process that was previously thought to be efficient in non-uniformly strained 2D semiconductors and termed as "funneling", is negligible at room temperature in contrast to previous observations. Conversely, we discover that redistribution of free carriers under non-uniform strain profiles leads to highly efficient conversion of excitons to trions. Conversion efficiency reaches $\simeq 100\%$ even without electrical gating. Our results explain inconsistencies in previous experiments and pave the way towards new types of optoelectronic devices.
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Submitted 11 November, 2019;
originally announced November 2019.
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Enhancement of two photon processes in quantum dots embedded in subwavelength metallic gratings
Authors:
Moshe G. Harats,
Ronen Rapaport,
Adiel Zimran,
Uri Banin,
Gang Chen
Abstract:
We show a large enhancement of two-photon absorption processes in nanocrystal quantum dots and of light upconversion efficiency from the IR to the near-IR spectral regime, using a hybrid optical device in which near-IR emitting InAs quantum dots were embedded on top a metallic nanoslit array. The resonant enhancement of these nonlinear optical processes is due to the strong local electromagnetic f…
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We show a large enhancement of two-photon absorption processes in nanocrystal quantum dots and of light upconversion efficiency from the IR to the near-IR spectral regime, using a hybrid optical device in which near-IR emitting InAs quantum dots were embedded on top a metallic nanoslit array. The resonant enhancement of these nonlinear optical processes is due to the strong local electromagnetic field enhancements inside the nanoslit array structure at the extraordinary transmission resonances. A maximal two-photon absorption enhancement of more than 20 was inferred. Different high field regions were identified for different polarizations, which can be used for designing and optimizing efficient nonlinear processes in such hybrid structures. Combining nanocrystal quantum dots with subwavelength metallic nanostructures is therfore a promising way for a range of possible nonlinear optical devices.
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Submitted 17 November, 2010;
originally announced November 2010.
