-
Engineering tunable strain fields in suspended graphene by microelectromechanical systems
Authors:
Jens Sonntag,
Matthias Goldsche,
Tymofiy Khodkov,
Gerard Verbiest,
Sven Reichardt,
Nils von den Driesch,
Dan Buca,
Christoph Stampfer
Abstract:
Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-MEMS technology; (2) full control over induced strain fields and doping levels within the graphene membrane and their characterization via spatially r…
▽ More
Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-MEMS technology; (2) full control over induced strain fields and doping levels within the graphene membrane and their characterization via spatially resolved confocal Raman spectroscopy; and (3) the ability to detect the mechanical coupling of the graphene sheet to the MEMS device with via their mechanical resonator eigenfrequencies.
△ Less
Submitted 25 March, 2021;
originally announced March 2021.
-
Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout
Authors:
D. De Fazio,
B. Uzlu,
I. Torre,
C. Monasterio,
S. Gupta,
T. Khodkov,
Y. Bi,
Z. Wang,
M. Otto,
M. C. Lemme,
S. Goossens,
D. Neumaier,
F. H. L. Koppens
Abstract:
Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout…
▽ More
Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout requires dark currents of hundreds of $μ$A up to mA, leading to high power consumption needed for the device operation. Here we propose a novel approach for highly responsive graphene-based photodetectors with orders of magnitude lower dark current levels. A shift of the graphene chemical potential caused by light absorption in a layer of colloidal quantum dots, induces a variation of the current flowing across a metal-insulator-graphene diode structure. Owing to the low density of states of graphene near the neutrality point, the light-induced shift in chemical potential can be relatively large, dramatically changing the amount of current flowing across the insulating barrier, and giving rise to a novel type of gain mechanism. This readout requires dark currents of hundreds of nA up to few $μ$A, orders of magnitude lower than other graphene-based photodetectors, while keeping responsivities of $\sim$70A/W in the infrared, almost two orders of magnitude higher compared to established germanium on silicon and indium gallium arsenide infrared photodetectors. This makes the device appealing for applications where high responsivity and low power consumption are required.
△ Less
Submitted 21 May, 2020;
originally announced May 2020.
-
Tunable coupling of two mechanical resonators by a graphene membrane
Authors:
G. J. Verbiest,
M. Goldsche,
J. Sonntag,
T. Khodkov,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
Coupled nanomechanical resonators are interesting for both fundamental studies and practical applications as they offer rich and tunable oscillation dynamics. At present, the mechanical coupling in such systems is often mediated by a fixed geometry, such as a joint clamping point of the resonators or a displacement-dependent force. Here we show a graphene-integrated electromechanical system consis…
▽ More
Coupled nanomechanical resonators are interesting for both fundamental studies and practical applications as they offer rich and tunable oscillation dynamics. At present, the mechanical coupling in such systems is often mediated by a fixed geometry, such as a joint clamping point of the resonators or a displacement-dependent force. Here we show a graphene-integrated electromechanical system consisting of two physically separated mechanical resonators -- a comb-drive actuator and a suspended silicon beam -- that are tunably coupled by a graphene membrane. The graphene membrane, moreover, provides a sensitive electrical read-out for the two resonating systems silicon structures showing 16 different modes in the frequency range from 0.4~to 24~MHz. In addition, by pulling on the graphene membrane with an electrostatic potential applied to one of the silicon resonators, we control the mechanical coupling, quantified by the $g$-factor, from 20 kHz to 100 kHz. Our results pave the way for coupled nanoelectromechanical systems requiring controllable mechanically coupled resonators.
△ Less
Submitted 6 November, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
-
Far-field Excitation of Single Graphene Plasmon Cavities with Ultra-compressed Mode-volumes
Authors:
Itai Epstein,
David Alcaraz,
Zhiqin Huang,
Varun-Varma Pusapati,
Jean-Paul Hugonin,
Avinash Kumar,
Xander Deputy,
Tymofiy Khodkov,
Tatiana G. Rappoport,
Nuno M. R. Peres,
David R. Smith,
Frank H. L. Koppens
Abstract:
Acoustic-graphene-plasmons (AGPs) are highly confined electromagnetic modes, carrying large momentum and low loss in the mid-infrared/Terahertz spectra. Owing to their ability to confine light to extremely small dimensions, they bear great potential for ultra-strong light-matter interactions in this long wavelength regime, where molecular fingerprints reside. However, until now AGPs have been rest…
▽ More
Acoustic-graphene-plasmons (AGPs) are highly confined electromagnetic modes, carrying large momentum and low loss in the mid-infrared/Terahertz spectra. Owing to their ability to confine light to extremely small dimensions, they bear great potential for ultra-strong light-matter interactions in this long wavelength regime, where molecular fingerprints reside. However, until now AGPs have been restricted to micron-scale areas, reducing their confinement potential by several orders-of-magnitude. Here, by utilizing a new type of graphene-based magnetic-resonance, we realize single, nanometric-scale AGP cavities, reaching record-breaking mode-volume confinement factors of $\thicksim5\cdot10^{-10}$. This AGP cavity acts as a mid-infrared nanoantenna, which is efficiently excited from the far-field, and electrically tuneble over an ultra-broadband spectrum. Our approach provides a new platform for studying ultra-strong-coupling phenomena, such as chemical manipulation via vibrational-strong-coupling, and a path to efficient detectors and sensors, in this challenging spectral range.
△ Less
Submitted 11 February, 2020; v1 submitted 2 February, 2020;
originally announced February 2020.
-
High-mobility, wet-transferred graphene grown by chemical vapor deposition
Authors:
D. De Fazio,
D. G. Purdie,
A. K. Ott,
P. Braeuninger-Weimer,
T. Khodkov,
S. Goossens,
T. Taniguchi,
K. Watanabe,
P. Livreri,
F. H. L. Koppens,
S. Hofmann,
I. Goykhman,
A. C. Ferrari,
A. Lombardo
Abstract:
We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. Th…
▽ More
We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$\sim30000 cm^2 V^{-1} s^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000cm^2 V^{-1} s^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.
△ Less
Submitted 5 April, 2019; v1 submitted 2 April, 2019;
originally announced April 2019.
-
Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields
Authors:
G. J. Verbiest,
H. Janssen,
D. Xu,
X. Ge,
M. Goldsche,
J. Sonntag,
T. Khodkov,
L. Banszerus,
N. von den Driesch,
D. Buca,
K. Watanabe,
T. Taniguchi,
C. Stampfer
Abstract:
We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of t…
▽ More
We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance. Through a detailed noise characterization, we find that the best resolution is obtained when operating the HEMT amplifier at the highest gain. We obtained a resolution in the absolute capacitance of 6.4~aF$/\sqrt{\textrm{Hz}}$ at 77 K on a comb-drive actuator, while maintaining a small excitation amplitude of 15~$k_\text{B} T/e$. We show the magnetic field functionality of our impedance bridge by measuring the quantum Hall plateaus of a top-gated hBN/graphene/hBN heterostructure at 60~mK with a probe signal of 12.8~$k_\text{B} T/e$.
△ Less
Submitted 27 June, 2019; v1 submitted 17 January, 2019;
originally announced January 2019.
-
Fabrication of comb-drive actuators for straining nanostructured suspended graphene
Authors:
M. Goldsche,
G. J. Verbiest,
T. Khodkov,
J. Sonntag,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from $\approx51.6$ k$\mathrmΩ$ to $\approx236$ $\mathrmΩ$ at room te…
▽ More
We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from $\approx51.6$ k$\mathrmΩ$ to $\approx236$ $\mathrmΩ$ at room temperature in order to allow for strain-dependent transport measurements. The graphene is integrated by mechanically transferring it directly onto the actuator using a polymethylmethacrylate membrane. Importantly, the integrated graphene can be nanostructured afterwards to optimize device functionality. The minimum feature size of the structured suspended graphene is 30 nm, which allows for interesting device concepts such as mechanically-tunable nanoconstrictions. Finally, we characterize the fabricated devices by measuring the Raman spectrum as well as the a mechanical resonance frequency of an integrated graphene sheet for different strain values.
△ Less
Submitted 7 June, 2018; v1 submitted 11 April, 2018;
originally announced April 2018.
-
Detecting Ultrasound Vibrations by Graphene Resonators
Authors:
G. J. Verbiest,
J. N. Kirchhof,
J. Sonntag,
M. Goldsche,
T. Khodkov,
C. Stampfer
Abstract:
Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we…
▽ More
Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we show a graphene resonator that detects ultrasound vibrations propagating through the substrate on which it was fabricated. We achieve ultimately a resolution of $\approx7$~pm/$\mathrm{\sqrt Hz}$ in ultrasound amplitude at frequencies up to 100~MHz. Thanks to an extremely high nonlinearity in the mechanical restoring force, the resonance frequency itself can also be used for ultrasound detection. We observe a shift of 120~kHz at a resonance frequency of 65~MHz for an induced vibration amplitude of 100~pm with a resolution of 25~pm. Remarkably, the nonlinearity also explains the generally observed asymmetry in the resonance frequency tuning of the resonator when pulled upon with an electrostatic gate. This work puts forward a sensor design that fits onto an atomic force microscope cantilever and therefore promises direct ultrasound detection at the nanoscale for nondestructive subsurface characterization.
△ Less
Submitted 22 June, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
-
Tailoring mechanically-tunable strain fields in graphene
Authors:
M. Goldsche,
J. Sonntag,
T. Khodkov,
G. Verbiest,
S. Reichardt,
C. Neumann,
T. Ouaj,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substr…
▽ More
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$μ$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.
△ Less
Submitted 13 November, 2017;
originally announced November 2017.
-
Tunable mechanical coupling between driven microelectromechanical resonators
Authors:
G. J. Verbiest,
D. Xu,
M. Goldsche,
T. Khodkov,
S. Barzanjeh,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
We present a microelectromechanical system, in which a silicon beam is attached to a comb-drive actuator, that is used to tune the tension in the silicon beam, and thus its resonance frequency. By measuring the resonance frequencies of the system, we show that the comb-drive actuator and the silicon beam behave as two strongly coupled resonators. Interestingly, the effective coupling rate (~ 1.5 M…
▽ More
We present a microelectromechanical system, in which a silicon beam is attached to a comb-drive actuator, that is used to tune the tension in the silicon beam, and thus its resonance frequency. By measuring the resonance frequencies of the system, we show that the comb-drive actuator and the silicon beam behave as two strongly coupled resonators. Interestingly, the effective coupling rate (~ 1.5 MHz) is tunable with the comb-drive actuator (+10%) as well as with a side-gate (-10%) placed close to the silicon beam. In contrast, the effective spring constant of the system is insensitive to either of them and changes only by $\pm$ 0.5%. Finally, we show that the comb-drive actuator can be used to switch between different coupling rates with a frequency of at least 10 kHz.
△ Less
Submitted 15 July, 2016;
originally announced July 2016.
-
Spatial control of laser-induced doping profiles in graphene on hexagonal boron nitride
Authors:
Christoph Neumann,
Leo Rizzi,
Sven Reichardt,
Bernat Terrés,
Timofiy Khodkov,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Christoph Stampfer
Abstract:
We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride (hBN) heterostructures. The technique is based on photo-induced doping by a focused laser and does neither require masks nor photo resists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritabl…
▽ More
We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride (hBN) heterostructures. The technique is based on photo-induced doping by a focused laser and does neither require masks nor photo resists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is only limited by the laser spot size (~600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.
△ Less
Submitted 2 November, 2015;
originally announced November 2015.
-
Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene
Authors:
T. Khodkov,
I Khrapach,
M. F. Craciun,
S. Russo
Abstract:
Few layer graphene systems such as Bernal stacked bilayer and rhombohedral (ABC-) stacked trilayer offer the unique possibility to open an electric field tunable energy gap. To date, this energy gap has been experimentally confirmed in optical spectroscopy. Here we report the first direct observation of the electric field tunable energy gap in electronic transport experiments on doubly gated suspe…
▽ More
Few layer graphene systems such as Bernal stacked bilayer and rhombohedral (ABC-) stacked trilayer offer the unique possibility to open an electric field tunable energy gap. To date, this energy gap has been experimentally confirmed in optical spectroscopy. Here we report the first direct observation of the electric field tunable energy gap in electronic transport experiments on doubly gated suspended ABC-trilayer graphene. From a systematic study of the non-linearities in current \textit{versus} voltage characteristics and the temperature dependence of the conductivity we demonstrate that thermally activated transport over the energy-gap dominates the electrical response of these transistors. The estimated values for energy gap from the temperature dependence and from the current voltage characteristics follow the theoretically expected electric field dependence with critical exponent $3/2$. These experiments indicate that high quality few-layer graphene are suitable candidates for exploring novel tunable THz light sources and detectors.
△ Less
Submitted 16 June, 2015;
originally announced June 2015.
-
Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene
Authors:
S. Engels,
B. Terrés,
A. Epping,
T. Khodkov,
K. Watanabe,
T. Taniguchi,
B. Beschoten,
C. Stampfer
Abstract:
We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $τ_φ$ as well as the inter- and intra-valley scattering times $τ_i$ and…
▽ More
We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $τ_φ$ as well as the inter- and intra-valley scattering times $τ_i$ and $τ_*$. While $τ_φ$ is in qualitative agreement with an electron-electron interaction mediated dephasing mechanism, electron spin-flip scattering processes are limiting $τ_φ$ at low temperatures. The analysis of $τ_i$ and $τ_*$ points to local strain fluctuation as the most probable mechanism for limiting the mobility in high-quality bilayer graphene.
△ Less
Submitted 30 September, 2014; v1 submitted 6 March, 2014;
originally announced March 2014.
-
Electrical transport in suspended and double gated trilayer graphene
Authors:
Thymofiy Khodkov,
Freddie Withers,
David Christopher Hudson,
Monica Felicia Craciun,
Saverio Russo
Abstract:
We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electric transport on a scale larger than 200nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an averag…
▽ More
We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electric transport on a scale larger than 200nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an average electric displacement of -0.08 V/nm, compatible with an electric field induced energy gap. The high quality of these devices is also demonstrated by the appearance of quantum Hall plateaus at magnetic fields as low as 500mT.
△ Less
Submitted 14 December, 2011; v1 submitted 13 December, 2011;
originally announced December 2011.
-
Electronic transport properties of few-layer graphene materials
Authors:
S. Russo,
M. F. Craciun,
T. Khodkov,
M. Koshino,
M. Yamamoto,
S. Tarucha
Abstract:
Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobi…
▽ More
Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new material system is even more apparent when considering that graphene is the thinnest member of a larger family: the few-layer graphene materials. Even though several physical properties are shared between graphene and its few-layers, recent theoretical and experimental advances demonstrate that each specific thickness of few-layer graphene is a material with unique physical properties.
△ Less
Submitted 7 May, 2011;
originally announced May 2011.
