Showing 1–50 of 137 results for author: Ferrari, A C

Nature of long-lived moiré interlayer excitons in electrically tunable MoS$_{2}$/MoSe$_{2}$ heterobilayers

Authors: Evgeny M. Alexeev, Carola M. Purser, Carmem M. Gilardoni, James Kerfoot, Hao Chen, Alisson R. Cadore, Bárbara L. T. Rosa, Matthew S. G. Feuer, Evans Javary, Patrick Hays, Kenji Watanabe, Takashi Taniguchi, Seth Ariel Tongay, Dhiren M. Kara, Mete Atatüre, Andrea C. Ferrari

Abstract: Interlayer excitons in transition-metal dichalcogenide heterobilayers combine high binding energy and valley-contrasting physics with long optical lifetime and strong dipolar character. Their permanent electric dipole enables electric-field control of emission energy, lifetime, and location. Device material and geometry impacts the nature of the interlayer excitons via their real- and momentum-spa… ▽ More Interlayer excitons in transition-metal dichalcogenide heterobilayers combine high binding energy and valley-contrasting physics with long optical lifetime and strong dipolar character. Their permanent electric dipole enables electric-field control of emission energy, lifetime, and location. Device material and geometry impacts the nature of the interlayer excitons via their real- and momentum-space configurations. Here, we show that interlayer excitons in MoS$_{2}$/MoSe$_{2}$ heterobilayers are formed by charge carriers residing at the Brillouin zone edges, with negligible interlayer hybridization. We find that the moiré superlattice leads to the reversal of the valley-dependent optical selection rules, yielding a positively valued g-factor and cross-polarized photoluminescence. Time-resolved photoluminescence measurements reveal that the interlayer exciton population retains the optically induced valley polarization throughout its microsecond-long lifetime. The combination of long optical lifetime and valley polarization retention makes MoS$_{2}$/MoSe$_{2}$ heterobilayers a promising platform for studying fundamental bosonic interactions and developing excitonic circuits for optical information processing. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Electromechanical response of saddle points in twisted hBN moiré superlattices

Authors: Stefano Chiodini, Giacomo Venturi, James Kerfoot, Jincan Zhang, Evgeny M. Alexeev, Takashi Taniguchi, Kenji Watanabe, Andrea C. Ferrari, Antonio Ambrosio

Abstract: In twisted layered materials (t-LMs), an inter-layer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the formation of edge in-plane polarizations localized along the perimeter of AB/BA regions (i.e., saddle point domains). However, a comprehensive experimental inve… ▽ More In twisted layered materials (t-LMs), an inter-layer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the formation of edge in-plane polarizations localized along the perimeter of AB/BA regions (i.e., saddle point domains). However, a comprehensive experimental investigation of these features is still lacking. Here, we use piezo force microscopy to probe the electromechanical behavior of twisted hexagonal boron nitride (t-hBN). For a parallel stacking alignment of t-hBN, we reveal very narrow (width ~ 20 nm) saddle point polarizations, which we also measure in the anti-parallel configuration. These localized polarizations can still be found on a multiply-stacked t-hBN structure, determining the formation of a double moiré. We also visualize a t-hBN moiré superlattice in the topography maps with atomic force microscopy, related to the strain accumulated at the saddle point domains. Our findings imply that polarizations in t-hBN do not only point in the out-of-plane direction, but also show an in-plane component, giving rise to a much more complex 3D polarization field. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Graphene phase modulators operating in the transparency regime

Authors: H. F. Y. Watson, A. Ruocco, M. Tiberi, J. E. Muench, O. Balci, S. M. Shinde, S. Mignuzzi, M. Pantouvaki, D. Van Thourhout, R. Sordan, A. Tomadin, M. Romagnoli, A. C. Ferrari

Abstract: Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pu… ▽ More Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pure phase modulation, where the phase of the optical signal is controlled without changing its intensity. Phase modulators are characterised by the voltage required to achieve a $π$ phase shift V$_π$, the device length L, and their product V$_π$L. To reduce power consumption, IQ modulators are needed with$<$1V drive voltages and compact (sub-cm) dimensions, which translate in V$_π$L$<$1Vcm. Si and LiNbO$_3$ (LN) IQ modulators do not currently meet these requirements, because V$_π$L$>$1Vcm. Here, we report a double single-layer graphene (SLG) Mach-Zehnder modulator (MZM) with pure phase modulation in the transparent regime, where optical losses are minimised and remain constant with increasing voltage. Our device has $V_πL\sim$0.3Vcm, matching state-of-the-art SLG-based MZMs and plasmonic LN MZMs, but with pure phase modulation and low insertion loss ($\sim$5dB), essential for IQ modulation. Our $V_πL$ is$\sim$5 times lower than the lowest thin-film LN MZMs, and$\sim$3 times lower than the lowest Si MZMs. This enables devices with complementary metal-oxide semiconductor compatible V$_π$L ($<$1Vcm) and smaller footprint than LN or Si MZMs, improving circuit density and reducing power consumption by one order of magnitude. △ Less

Submitted 25 December, 2023; originally announced January 2024.

A foundation model for atomistic materials chemistry

Authors: Ilyes Batatia, Philipp Benner, Yuan Chiang, Alin M. Elena, Dávid P. Kovács, Janosh Riebesell, Xavier R. Advincula, Mark Asta, Matthew Avaylon, William J. Baldwin, Fabian Berger, Noam Bernstein, Arghya Bhowmik, Samuel M. Blau, Vlad Cărare, James P. Darby, Sandip De, Flaviano Della Pia, Volker L. Deringer, Rokas Elijošius, Zakariya El-Machachi, Fabio Falcioni, Edvin Fako, Andrea C. Ferrari, Annalena Genreith-Schriever , et al. (51 additional authors not shown)

Abstract: Machine-learned force fields have transformed the atomistic modelling of materials by enabling simulations of ab initio quality on unprecedented time and length scales. However, they are currently limited by: (i) the significant computational and human effort that must go into development and validation of potentials for each particular system of interest; and (ii) a general lack of transferabilit… ▽ More Machine-learned force fields have transformed the atomistic modelling of materials by enabling simulations of ab initio quality on unprecedented time and length scales. However, they are currently limited by: (i) the significant computational and human effort that must go into development and validation of potentials for each particular system of interest; and (ii) a general lack of transferability from one chemical system to the next. Here, using the state-of-the-art MACE architecture we introduce a single general-purpose ML model, trained on a public database of 150k inorganic crystals, that is capable of running stable molecular dynamics on molecules and materials. We demonstrate the power of the MACE-MP-0 model - and its qualitative and at times quantitative accuracy - on a diverse set problems in the physical sciences, including the properties of solids, liquids, gases, chemical reactions, interfaces and even the dynamics of a small protein. The model can be applied out of the box and as a starting or "foundation model" for any atomistic system of interest and is thus a step towards democratising the revolution of ML force fields by lowering the barriers to entry. △ Less

Submitted 1 March, 2024; v1 submitted 29 December, 2023; originally announced January 2024.

Comments: 119 pages, 63 figures, 37MB PDF

Graphene-perovskite fibre photodetectors

Authors: S. Akhavan, A. Taheri Najafabadi, S. Mignuzzi, M. Abdi Jalebi, A. Ruocco, I. Paradisanos, O. Balci, Z. Andaji-Garmaroudi, I. Goykhman, L. G. Occhipinti, E. Lidorikis, S. D. Stranks, A. C. Ferrari

Abstract: The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, we prepar… ▽ More The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, we prepare fibre PDs combining rolled graphene layers and photoactive perovskites. Conductive fibres ($\sim$500$Ω$/cm) are made by rolling single layer graphene (SLG) around silica fibres, followed by deposition of a dielectric layer (Al$_{2}$O$_{3}$ and parylene C), another rolled SLG as channel, and perovskite as photoactive component. The resulting gate-tunable PDs have response time$\sim$5ms, with an external responsivity$\sim$22kA/W at 488nm for 1V bias. The external responsivity is two orders of magnitude higher and the response time one order of magnitude faster than state-of-the-art wearable fibre based PDs. Under bending at 4mm radius, up to$\sim$80\% photocurrent is maintained. Washability tests show$\sim$72\% of initial photocurrent after 30 cycles, promising for wearable applications. △ Less

Submitted 19 November, 2023; originally announced November 2023.

Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure

Authors: Xinghan Guo, Alexander M. Stramma, Zixi Li, William G. Roth, Benchen Huang, Yu Jin, Ryan A. Parker, Jesús Arjona Martínez, Noah Shofer, Cathryn P. Michaels, Carola P. Purser, Martin H. Appel, Evgeny M. Alexeev, Tianle Liu, Andrea C. Ferrari, David D. Awschalom, Nazar Delegan, Benjamin Pingault, Giulia Galli, F. Joseph Heremans, Mete Atatüre, Alexander A. High

Abstract: Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and… ▽ More Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. However, the SnV spin lacks efficient microwave control and its spin coherence degrades with higher temperature. In this work, we introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes. The controlled generation of crystal strain introduces orbital mixing that allows microwave control of the spin state with 99.36(9) % gate fidelity and spin coherence protection beyond a millisecond. Moreover, the presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223(10) $μ$s at 4 K, a widely accessible temperature in common cryogenic systems. Critically, the coherence of optical transitions is unaffected by the elevated temperature, exhibiting nearly lifetime-limited optical linewidths. Combined with the compatibility of diamond membranes with device integration, the demonstrated platform is an ideal spin-photon interface for future quantum technologies. △ Less

Submitted 6 October, 2023; v1 submitted 21 July, 2023; originally announced July 2023.

Monolayer WS$_2$ electro- and photo-luminescence enhancement by TFSI treatment

Authors: A. R. Cadore, B. L. T. Rosa, I. Paradisanos, S. Mignuzzi, D. De Fazio, E. M. Alexeev, J. E. Muench, G. Kakavelakis, S. M. Shinde, D. Yoon, S. Tongay, K. Watanabe, T. Taniguchi, E. Lidorikis, I. Goykhman, G. Soavi, A. C. Ferrari

Abstract: Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum… ▽ More Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum efficiency as low as$\sim$10$^{-4}$\%. Here, we show that the superacid bis-(triuoromethane)sulfonimide (TFSI) treatment of monolayer WS$_2$-LEDs boosts EL quantum efficiency by over one order of magnitude at room temperature. Non-treated devices emit light mainly from negatively charged excitons, while the emission in treated ones predominantly involves radiative recombination of neutral excitons. This paves the way to tunable and efficient LMH-LEDs △ Less

Submitted 2 May, 2023; originally announced May 2023.

Control of Raman scattering quantum interference pathways in graphene

Authors: Xue Chen, Sven Reichardt, Miao-Ling Lin, Yu-Chen Leng, Yan Lu, Heng Wu, Rui Mei, Ludger Wirtz, Xin Zhang, Andrea C. Ferrari, Ping-Heng Tan

Abstract: Graphene is an ideal platform to study the coherence of quantum interference pathways by tuning doping or laser excitation energy. The latter produces a Raman excitation profile that provides direct insight into the lifetimes of intermediate electronic excitations and, therefore, on quantum interference, which has so far remained elusive. Here, we control the Raman scattering pathways by tuning th… ▽ More Graphene is an ideal platform to study the coherence of quantum interference pathways by tuning doping or laser excitation energy. The latter produces a Raman excitation profile that provides direct insight into the lifetimes of intermediate electronic excitations and, therefore, on quantum interference, which has so far remained elusive. Here, we control the Raman scattering pathways by tuning the laser excitation energy in graphene doped up to 1.05eV, above what achievable with electrostatic doping. The Raman excitation profile of the G mode indicates its position and full width at half maximum are linearly dependent on doping. Doping-enhanced electron-electron interactions dominate the lifetime of Raman scattering pathways, and reduce Raman interference. This paves the way for engineering quantum pathways in doped graphene, nanotubes and topological insulators. △ Less

Submitted 23 January, 2023; originally announced January 2023.

Comments: 18 pages, 4 figures

Identification of exciton complexes in a charge-tuneable Janus WSeS monolayer

Authors: Matthew S. G. Feuer, Alejandro R. -P. Montblanch, Mohammed Sayyad, Carola M. Purser, Ying Qin, Evgeny M. Alexeev, Alisson R. Cadore, Barbara L. T. Rosa, James Kerfoot, Elaheh Mostaani, Radosław Kalęba, Pranvera Kolari, Jan Kopaczek, Kenji Watanabe, Takashi Taniguchi, Andrea C. Ferrari, Dhiren M. Kara, Sefaattin Tongay, Mete Atatüre

Abstract: Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photolumine… ▽ More Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photoluminescence (>15 meV) spectra obfuscating their excitonic origin. Here, we identify the neutral, and negatively charged inter- and intravalley exciton transitions in Janus WSeS monolayer with $\sim 6$ meV optical linewidth. We combine a recently developed synthesis technique, with the integration of Janus monolayers into vertical heterostructures, allowing doping control. Further, magneto-optic measurements indicate that monolayer WSeS has a direct bandgap at the K points. This work provides the foundation for applications such as nanoscale sensing, which relies on resolving excitonic energy shifts, and photo-voltaic energy harvesting, which requires efficient creation of long-lived excitons and integration into vertical heterostructures. △ Less

Submitted 13 October, 2022; originally announced October 2022.

Ultrashort pulse generation from a graphene-coupled passively mode-locked terahertz laser

Authors: Elisa Riccardi, Valentino Pistore, Seonggil Kang, Lukas Seitner, Anna De Vetter, Christian Jirauschek, Juliette Mangeney, Lianhe Li, A. Giles Davies, Edmund H. Linfield, Andrea C. Ferrari, Sukhdeep S. Dhillon, Miriam S. Vitiello

Abstract: The generation of stable trains of ultra-short (fs-ps), terahertz (THz)-frequency radiation pulses, with large instantaneous intensities, is an underpinning requirement for the investigation of light-matter interactions, for metrology and for ultra-high-speed communications. In solid-state electrically-pumped lasers, the primary route for generating short pulses is through passive mode-locking. Ho… ▽ More The generation of stable trains of ultra-short (fs-ps), terahertz (THz)-frequency radiation pulses, with large instantaneous intensities, is an underpinning requirement for the investigation of light-matter interactions, for metrology and for ultra-high-speed communications. In solid-state electrically-pumped lasers, the primary route for generating short pulses is through passive mode-locking. However, this has not yet been achieved in the THz range, defining one of the longest standing goals over the last two decades. In fact, the realization of passive mode-locking has long been assumed to be inherently hindered by the fast recovery times associated with the intersubband gain of THz lasers. Here, we demonstrate a self-starting miniaturized ultra-short pulse THz laser, exploiting an original device architecture that includes the surface patterning of multilayer-graphene saturable absorbers distributed along the entire cavity of a double-metal semiconductor 2.30-3.55 THz wire laser. Self-starting pulsed emission with 4.0-ps-long pulses in a compact, all-electronic, all-passive and inexpensive configuration is demonstrated. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Comments: 20 pages, 4 figures

Charge-carrier complexes in monolayer semiconductors

Authors: E. Mostaani, R. J. Hunt, D. M. Thomas, M. Szyniszewski, A. R. P. Montblanch, M. Barbone, M. Atature, N. D. Drummond, A. C. Ferrari

Abstract: The photoluminescence (PL) spectra of monolayer (1L) semiconductors feature peaks ascribed to different charge-carrier complexes. We perform diffusion quantum Monte Carlo simulations of the binding energies of these complexes and examine their response to electric and magnetic fields. We focus on quintons (charged biexcitons), since they are the largest free charge-carrier complexes in transition-… ▽ More The photoluminescence (PL) spectra of monolayer (1L) semiconductors feature peaks ascribed to different charge-carrier complexes. We perform diffusion quantum Monte Carlo simulations of the binding energies of these complexes and examine their response to electric and magnetic fields. We focus on quintons (charged biexcitons), since they are the largest free charge-carrier complexes in transition-metal dichalcogenides (TMDs). We examine the accuracy of the Rytova-Keldysh interaction potential between charges by comparing the binding energies of charge-carrier complexes in 1L-TMDs with results obtained using $\textit{ab initio}$ interaction potentials. Magnetic fields$<8$T change the binding energies (BEs) by$\sim0.2$ meV,T$^{-1}$, in agreement with experiments, with the BE variations of different complexes being very similar. Our results will help identify charge complexes in the PL spectra of 1L-semiconductors △ Less

Submitted 4 September, 2022; originally announced September 2022.

Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures

Authors: M. Asgari, L. Viti, O. Balci, S. M. Shinde, J. Zhang, H. Ramezani, S. Sharma, A. Meersha, G. Menichetti, C. McAleese, B. Conran, X. Wang, A. Tomadin, A. C. Ferrari, M. S. Vitiello

Abstract: The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration… ▽ More The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration of SLG-based active elements with pre-existing technological platforms in a scalable way, while maintaining performance level unperturbed. Here, we report on the development of room temperature THz detection in large-area SLG, grown by chemical vapor deposition (CVD), integrated in antenna-coupled field effect transistors. We selectively activate the photo-thermoelectric detection dynamics, and we employ different dielectric configurations on SLG on Al2O3 with and without large-area CVD hBN capping to investigate their effect on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times ~5ns and noise equivalent powers ~1nWHz-1/2 are achieved under zero-bias operation. This shows the feasibility of scalable, large-area, layered materials heterostructures for THz detection. △ Less

Submitted 28 June, 2022; originally announced June 2022.

Comments: 15 pages, 4 Figures. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at the link https://doi.org/10.1063/5.0097726

Electrically tuneable nonequilibrium optical response of graphene

Authors: Eva A. A. Pogna, Andrea Tomadin, Osman Balci, Giancarlo Soavi, Ioannis Paradisanos, Michele Guizzardi, Paolo Pedrinazzi, Sandro Mignuzzi, Klaas-Jan Tielrooij, Marco Polini, Andrea C. Ferrari, Giulio Cerullo

Abstract: The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors and transparent electrodes. The band structure of single layer graphene (SLG), with zero-gap, linearly dispersive conduction and valence bands, enables an easy control of the Fermi energy… ▽ More The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors and transparent electrodes. The band structure of single layer graphene (SLG), with zero-gap, linearly dispersive conduction and valence bands, enables an easy control of the Fermi energy E$_F$ and of the threshold for interband optical absorption. Here, we report the tunability of the SLG non-equilibrium optical response in the near-infrared (1000-1700nm/0.729-1.240eV), exploring a range of E$_F$ from -650 to 250 meV by ionic liquid gating. As E$_F$ increases from the Dirac point to the threshold for Pauli blocking of interband absorption, we observe a slow-down of the photobleaching relaxation dynamics, which we attribute to the quenching of optical phonon emission from photoexcited charge carriers. For E$_F$ exceeding the Pauli blocking threshold, photobleaching eventually turns into photoinduced absorption, due to hot electrons' excitation increasing SLG absorption. The ability to control both recovery time and sign of nonequilibrium optical response by electrostatic gating makes SLG ideal for tunable saturable absorbers with controlled dynamics. △ Less

Submitted 22 February, 2022; v1 submitted 15 June, 2021; originally announced June 2021.

Comments: 6 figures

Journal ref: ACS Nano 2022

Quantum control of the tin-vacancy spin qubit in diamond

Authors: Romain Debroux, Cathryn P. Michaels, Carola M. Purser, Noel Wan, Matthew E. Trusheim, Jesús Arjona Martínez, Ryan A. Parker, Alexander M. Stramma, Kevin C. Chen, Lorenzo de Santis, Evgeny M. Alexeev, Andrea C. Ferrari, Dirk Englund, Dorian A. Gangloff, Mete Atatüre

Abstract: Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions towards spin-photon entanglement schemes. Here, we demonstrate multi-axis coherent cont… ▽ More Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions towards spin-photon entanglement schemes. Here, we demonstrate multi-axis coherent control of the SnV spin qubit via an all-optical stimulated Raman drive between the ground and excited states. We use coherent population trapping and optically driven electronic spin resonance to confirm coherent access to the qubit at 1.7 K, and obtain spin Rabi oscillations at a rate of $Ω/2π$=3.6(1) MHz. All-optical Ramsey interferometry reveals a spin dephasing time of $T_2^*$=1.3(3)$μ$s and two-pulse dynamical decoupling already extends the spin coherence time to $T_2$=0.33(14) ms. Combined with transform-limited photons and integration into photonic nanostructures, our results make the SnV a competitive spin-photon building block for quantum networks. △ Less

Submitted 1 June, 2021; originally announced June 2021.

The Behavior of Internet Traffic for Internet Services during COVID-19 Pandemic Scenario

Authors: Carlos Alexandre Gouvea da Silva, Allan Christian Krainski Ferrari, Cristiano Osinski, Douglas Antonio Firmino Pelacini

Abstract: Since the end of 2019, the SARS-CoV-2 virus known as COVID-19 has spread rapidly around the world, forcing many governments to impose restrictive blocking or lockdown to combat the pandemic. With locomotion restriction of people in almost of countries of the world, workers and students needed to keep their activities at home. As a result, people's behavior, habits, and the way they started using t… ▽ More Since the end of 2019, the SARS-CoV-2 virus known as COVID-19 has spread rapidly around the world, forcing many governments to impose restrictive blocking or lockdown to combat the pandemic. With locomotion restriction of people in almost of countries of the world, workers and students needed to keep their activities at home. As a result, people's behavior, habits, and the way they started using the Internet changed significantly. Like professionals of offices, the younger played an important role in this behavior, especially in the type of resources used by them. As result, the characterization and traffic of communication networks were affected in some way. In this perspective article, we join from many available studies about the COVID-19 effect at networks and investigate the effects on the Internet traffic of using services such as video streaming, video conferencing, and gaming during 2020's months of the pandemic. △ Less

Submitted 9 May, 2021; originally announced May 2021.

Comments: 4 pages, 2 figures, Submitted to XXXIX Simpósio Brasileiro de Telecomunicações e Processamento de Sinais, SBrT 2021, Fortaleza, CE, Brasil

Exciton-phonon coupling strength in single-layer MoSe2 at room temperature

Authors: Donghai Li, Chiara Trovatello, Stefano Dal Conte, Matthias Nuß, Giancarlo Soavi, Gang Wang, Andrea C. Ferrari, Giulio Cerullo, Tobias Brixner

Abstract: Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton-phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton-phonon coupling strength has not been measured at room temperature. Here, we develop two-dimensional micro-spectro… ▽ More Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton-phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton-phonon coupling strength has not been measured at room temperature. Here, we develop two-dimensional micro-spectroscopy to determine exciton-phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time T, induced by the coupling between the A exciton and the A'1 optical phonon. Analysis of two-dimensional beating maps combined with simulations provides the exciton-phonon coupling. The Huang-Rhys factor of ~1 is larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton-phonon coupling also in other heterogeneous semiconducting systems with a spatial resolution ~260 nm, and will provide design-relevant parameters for the development of optoelectronic devices. △ Less

Submitted 21 December, 2020; originally announced December 2020.

Wafer-scale integration of graphene-based photonic devices

Authors: Marco A. Giambra, Vaidotas Mišeikis, Sergio Pezzini, Simone Marconi, Alberto Montanaro, Filippo Fabbri, Vito Sorianello, Andrea C. Ferrari, Camilla Coletti, Marco Romagnoli

Abstract: Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour depositi… ▽ More Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour deposition (CVD) of single layer graphene (SLG) matrices comprising up to ~12000 individual single crystals (SCs), grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ~80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ~5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ~0.25, 0.45, 0.75, 1 dB V-1 for device lengths ~30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hBN is used to protected SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. Our full process flow (from growth to device fabrication) enables the commercial implementation of graphene-based photonic devices. △ Less

Submitted 9 February, 2021; v1 submitted 18 November, 2020; originally announced December 2020.

Comments: 30 pages, 9 Figures

Tunable, grating-gated, graphene-on-polyimide terahertz modulators

Authors: Alessandra Di Gaspare, Eva A. A. Pogna, Luca Salemi, Osman Balci, Alisson R. Cadore, Sachin M. Shinde, Lianhe Li, Cinzia di Franco, A. Giles Davies, Edmund Linfield, Andrea C. Ferrari, Gaetano Scamarcio, Miriam S. Vitiello

Abstract: We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonan… ▽ More We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. We get 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9 _ 2.7 THz range. We then integrate our modulator with a multimode THz QCL. By adjusting the modulator operational bandwidth, we demonstrate that the graphene modulator can partially compensates the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the laser operational range, with 98 equidistant optical modes and with a spectral coverage of ~ 1.2 THz. This has significant potential for frontier applications in the terahertz, as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and as a metrological tool for spectroscopy at THz frequencies. △ Less

Submitted 22 November, 2020; originally announced December 2020.

Comments: 22 pages, 6 figures

Tunable broadband light emission from graphene

Authors: Lavinia Ghirardini, Eva A. A. Pogna, Giancarlo Soavi, Andrea Tomadin, Paolo Biagioni, Stefano Dal Conte, Domenico De Fazio, T. Taniguchi, K. Watanabe, Lamberto Duò, Marco Finazzi, Marco Polini, Andrea C. Ferrari, Giulio Cerullo, Michele Celebrano

Abstract: Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwi… ▽ More Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwidth, as well as the electronic temperature of graphene. Here, we demonstrate that the emission wavelength of graphene$'$ s broadband hot carrier photoluminescence can be tuned by integration on photonic cavities, while thermal management can be achieved by out-of-plane heat transfer to hexagonal boron nitride. Our results pave the way to graphene-based ultrafast broadband light emitters with tunable emission. △ Less

Submitted 3 December, 2020; originally announced December 2020.

Comments: 22 pages, 5 Figures

Shear and breathing modes of layered materials

Authors: Giovanni Pizzi, Silvia Milana, Andrea C. Ferrari, Nicola Marzari, Marco Gibertini

Abstract: Layered materials (LMs), such as graphite, hexagonal boron nitride, and transition-metal dichalcogenides, are at the centre of an ever increasing research effort, due to their scientific and technological relevance. Raman and infrared spectroscopies are accurate, non-destructive, approaches to determine a wide range of properties, including the number of layers and the strength of the interlayer i… ▽ More Layered materials (LMs), such as graphite, hexagonal boron nitride, and transition-metal dichalcogenides, are at the centre of an ever increasing research effort, due to their scientific and technological relevance. Raman and infrared spectroscopies are accurate, non-destructive, approaches to determine a wide range of properties, including the number of layers and the strength of the interlayer interactions. Here, we present a general approach to predict the complete spectroscopic fan diagrams, i.e., the relations between frequencies and number of layers, $N$, for the optically-active shear and layer-breathing modes of any multilayer comprising $N \geq 2$ identical layers. In order to achieve this, we combine a description of the normal modes in terms of a one-dimensional mechanical model, with symmetry arguments that describe the evolution of the point group as a function of $N$. Group theory is then used to identify which modes are Raman and/or infrared active, and to provide diagrams of the optically-active modes for any stack composed of identical layers. We implement the method and algorithms in an open-source tool directly available on the Materials Cloud portal, to assist any researcher in the prediction and interpretation of such diagrams. Our work will underpin all future efforts on Raman and Infrared characterization of known, and yet not investigated, LMs. △ Less

Submitted 30 November, 2020; originally announced November 2020.

Comments: 30 pages (including appendices and tables), 7 figures

Journal ref: G. Pizzi et al., ACS Nano 15, 12509 (2021)

Terahertz frequency combs exploiting an on-chip solution processed graphene-quantum cascade laser coupled-cavity architecture

Authors: F. P. Mezzapesa, K. Garrasi, J. Schmidt, L. Salemi, V. Pistore, L. Li, A. G. Davies, E. H. Linfield, M. Riesch, C. Jirauschek, T. Carey, F. Torrisi, A. C. Ferrari, M. S. Vitiello

Abstract: The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersu… ▽ More The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersubband gain medium, self-lock the optical modes in phase, allowing stable comb operation, albeit over a restricted dynamic range (~ 20% of the laser operational range). Here, we engineer miniaturized THz FCSs comprising a heterogeneous THz QCL integrated with a tightly-coupled on-chip solution-processed graphene saturable-absorber reflector that preserves phase-coherence between lasing modes even when four-wave mixing no longer provides dispersion compensation. This enables a high-power (8 mW) FCS with over 90 optical modes to be demonstrated, over more than 55% of the laser operational range. Furthermore, stable injection-locking is showed, paving the way to impact a number of key applications, including high-precision tuneable broadband-spectroscopy and quantum-metrology. △ Less

Submitted 23 November, 2020; originally announced November 2020.

Comments: 31 pages, 11 figures, to be published in ACS Photonics

Wide field of view crystal orientation mapping of layered materials

Authors: A. Orekhov, D. Jannis, N. Gauquelin, G. Guzzinati, A. Nalin Mehta, S. Psilodimitrakopoulos, L. Mouchliadis, P. K. Sahoo, I. Paradisanos, A. C. Ferrari, G. Kioseoglou, E. Stratakis, J. Verbeeck

Abstract: Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning elect… ▽ More Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning electron microscope into a tool for structural analysis of a wide range of LMs. An hybrid pixel electron detector below the sample makes it possible to record two dimensional (2d) diffraction patterns for every probe position on the sample surface (2d), in transmission mode, thus performing a 2d+2d=4d STEM (scanning transmission electron microscopy) analysis. This offers a field of view up to 2 mm2, while providing spatial resolution in the nm range, enabling the collection of statistical data on grain size, relative orientation angle, bilayer stacking, strain, etc. which can be mined through automated open-source data analysis software. We demonstrate this approach by analyzing a variety of LMs, such as mono- and multi-layer graphene, graphene oxide and MoS2, showing the ability of this method to characterize them in the tens of nm to mm scale. This wide field of view range and the resulting statistical information are key for large scale applications of LMs. △ Less

Submitted 3 November, 2020; originally announced November 2020.

Comments: A. Orekhov and D. Jannis contributed equally to this work. J. Verbeeck is corresponding author

Low-loss integrated nanophotonic circuits with layered semiconductor materials

Authors: Tianyi Liu, Ioannis Paradisanos, Jijun He, Alisson R. Cadore, Junqiu Liu, Mikhail Churaev, Rui Ning Wang, Arslan S. Raja, Clément Javerzac-Galy, Philippe Rölli, Domenico De Fazio, Barbara L. T. Rosa, Sefaattin Tongay, Giancarlo Soavi, Andrea C. Ferrari, Tobias J. Kippenberg

Abstract: Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, t… ▽ More Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding. △ Less

Submitted 15 October, 2020; v1 submitted 12 October, 2020; originally announced October 2020.

Journal ref: Nano Letters 21, 2709 - 2718 (2021)

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

Authors: Vaidotas Mišeikis, Simone Marconi, Marco A. Giambra, Alberto Montanaro, Leonardo Martini, Filippo Fabbri, Sergio Pezzini, Giulia Piccinini, Stiven Forti, Bernat Terrés, Ilya Goykhman, Louiza Hamidouche, Pierre Legagneux, Vito Sorianello, Andrea C. Ferrari, Frank H. L. Koppens, Marco Romagnoli, Camilla Coletti

Abstract: We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and… ▽ More We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity 8 x 10$^{10}$ $cm^{-2}$ at the charge neutrality point, and a large Seebeck coefficient 140 $μ$V K$^{-1}$, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices. △ Less

Submitted 11 September, 2020; originally announced September 2020.

Comments: 15 pages, 11 figures. Published under ACS AuthorChoice license

Journal ref: ACS Nano 14, 11190 (2020)

An Embedded System for Monitoring Industrial Air Dehumidifiers using a Mobile Android Application for IEEE 802.11 Networks

Authors: Erik de Oliveira Rosa, Lincoln Cezar Grabarski, Marcos Fernando Fragoso, Allan Cristian Krainski Ferrari, Jefferson Rodrigo Schuertz, Carlos Alexandre Gouvea da Silva

Abstract: The constant technological evolution allowed significant advances and improvements in the processes of industries, mainly in areas that demand greater control and environmental air efficiency. In this way, Embedded Systems allows the development of products and services that aim to solve or propose solutions in these industrial environments. This article presents the development of an Embedded Sys… ▽ More The constant technological evolution allowed significant advances and improvements in the processes of industries, mainly in areas that demand greater control and environmental air efficiency. In this way, Embedded Systems allows the development of products and services that aim to solve or propose solutions in these industrial environments. This article presents the development of an Embedded System with a Programmable Logic Controller (PLC) and Arduino for industrial air dehumidifier, which allows the monitoring of failures remotely from a reliable data communication in a mobile application for Android operating system (OS) on a wireless network IEEE 802.11. As a result, a prototype of the test bench for the Embedded System is presented in which the main parameters of temperature sensors and operating conditions of the dehumidifiers are checked. △ Less

Submitted 9 August, 2020; originally announced August 2020.

Comments: 4 pages, 6 figures, This paper was submitted and accepted in the 35th South Symposium on Microelectronics (SIM2020). Virtual Event, Brazil. 27-30 Apr 2020

Journal ref: 35th South Symposium on Microelectronics (SIM2020)

Non-equilibrium Band Broadening, Gap Renormalization and Band Inversion in Black Phosphorus

Authors: H. Hedayat, A. Ceraso, G. Soavi, S. Akhavan, A. Cadore, C. Dallera, G. Cerullo, A. C. Ferrari, E. Carpene

Abstract: Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is crucial. Here, we investigate by time- and angle-resolved photoemission spectroscopy BP in its pristine state and in the presence of Stark splitting, chemically… ▽ More Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is crucial. Here, we investigate by time- and angle-resolved photoemission spectroscopy BP in its pristine state and in the presence of Stark splitting, chemically induced by Cs ad-sorption. We show that photo-injected carriers trigger bandgap renormalization and a concurrent valence band attening caused by Pauli blocking. In the biased sample, photoexcitation leads to a long-lived (ns) surface photovoltage of few hundreds mV that counterbalances the Cs-induced surface band bending. This allows us to disentangle bulk from surface electronic states and to clarify the mechanism underlying the band inversion observed in bulk samples. △ Less

Submitted 19 July, 2020; originally announced July 2020.

Journal ref: 2D Materials 8, 025020 (2021)

Efficient phonon cascades in hot photoluminescence of WSe$_2$ monolayers

Authors: Ioannis Paradisanos, Gang Wang, Evgeny M. Alexeev, Alisson R. Cadore, Xavier Marie, Andrea C. Ferrari, Mikhail M. Glazov, Bernhard Urbaszek

Abstract: Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs) in optoelectronics. We measure light scattering and emission in 1L-WSe$_2$ close to the laser excitation energy (down to~$\sim$0.6meV). We detect a series of periodic maxima in the hot photoluminescence intensity, stemmi… ▽ More Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs) in optoelectronics. We measure light scattering and emission in 1L-WSe$_2$ close to the laser excitation energy (down to~$\sim$0.6meV). We detect a series of periodic maxima in the hot photoluminescence intensity, stemming from energy states higher than the A-exciton state, in addition to sharp, non-periodic Raman lines related to the phonon modes. We find a period $\sim$15meV for peaks both below (Stokes) and above (anti-Stokes) the laser excitation energy. We detect 7 maxima from 78K to room temperature in the Stokes signal and 5 in the anti-Stokes, of increasing intensity with temperature. We assign these to phonon cascades, whereby carriers undergo phonon-induced transitions between real states in the free-carrier gap with a probability of radiative recombination at each step. We infer that intermediate states in the conduction band at the $Λ$-valley of the Brillouin zone participate in the cascade process of 1L-WSe$_2$. The observations explain the primary stages of carrier relaxation, not accessible so far in time-resolved experiments. This is important for optoelectronic applications, such as photodetectors and lasers, because these determine the recovery rate and, as a consequence, the devices' speed and efficiency. △ Less

Submitted 10 July, 2020; originally announced July 2020.

Comments: 13 pages, 10 figures

Journal ref: Nature Communications, volume 12, Article number: 538 (2021)

High-responsivity graphene photodetectors integrated on silicon microring resonators

Authors: Simone Schuler, Jakob E. Muench, Alfonso Ruocco, Osman Balci, Dries van Thourhout, Vito Sorianello, Marco Romagnoli, Kenji Watanabe, Takashi Taniguchi, Ilya Goykhman, Andrea C. Ferrari, Thomas Mueller

Abstract: Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input… ▽ More Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input - of GPDs compared to conventional PDs. Here we overcome this shortfall by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve $>$90% light absorption in a $\sim$6 $μ$m SLG channel along the Si waveguide. Exploiting the cavity-enhanced light-matter interaction, causing carriers in SLG to reach $\sim$400 K for an input power of $\sim$0.6 mW, we get a voltage responsivity $\sim$90 V/W, demonstrating the feasibility of our approach. Our device is capable of detecting data rates up to 20 Gbit/s, with a receiver sensitivity enabling it to operate at a 10$^{-9}$ bit-error rate, on par with mature semiconductor technology. The natural generation of a voltage rather than a current, removes the need for transimpedance amplification, with a reduction of the energy-per-bit cost and foot-print, when compared to a traditional semiconductor-based receiver. △ Less

Submitted 6 July, 2020; originally announced July 2020.

Comments: 11 pages, 5 figures

Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies

Authors: Leonardo Viti, Alisson R. Cadore, Xinxin Yang, Andrei Vorobiev, Jakob E. Muench, Kenji Watanabe, Takashi Taniguchi, Jan Stake, Andrea C. Ferrari, Miriam S. Vitiello

Abstract: Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots… ▽ More Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (~100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power <120 pWHz-1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1-10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications. △ Less

Submitted 24 June, 2020; v1 submitted 18 June, 2020; originally announced June 2020.

Comments: This is the unedited authors' version of the article accepted for publication in Nanophotonics 2020 (Online ISSN: 2192-8614)

Confinement of long-lived interlayer excitons in WS$_2$/WSe$_2$ heterostructures

Authors: Alejandro R. -P. Montblanch, Dhiren M. Kara, Ioannis Paradisanos, Carola M. Purser, Matthew S. G. Feuer, Evgeny M. Alexeev, Lucio Stefan, Ying Qin, Mark Blei, Gang Wang, Alisson R. Cadore, Pawel Latawiec, Marko Lončar, Sefaattin Tongay, Andrea C. Ferrari, Mete Atatüre

Abstract: Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to localise individual interlayer excitons in potential energy traps is a key step towards simulating Hubbard physics in artificial lattices. Here, we demonstrate spatial localisation of long-lived interlayer excitons in a str… ▽ More Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to localise individual interlayer excitons in potential energy traps is a key step towards simulating Hubbard physics in artificial lattices. Here, we demonstrate spatial localisation of long-lived interlayer excitons in a strongly confining trap array using a WS$_{2}$/WSe$_{2}$ heterostructure on a nanopatterned substrate. We detect long-lived interlayer excitons with lifetime approaching 0.2 ms and show that their confinement results in a reduced lifetime in the microsecond range and stronger emission rate with sustained optical selection rules. The combination of a permanent dipole moment, spatial confinement and long lifetime places interlayer excitons in a regime that satisfies one of the requirements for observing long-range dynamics in an optically resolvable trap lattice. △ Less

Submitted 5 May, 2020; originally announced May 2020.

HBN-encapsulated, graphene-based room-temperature terahertz receivers with high speed and low noise

Authors: Leonardo Viti, David G. Purdie, Antonio Lombardo, Andrea C. Ferrari, Miriam S. Vitiello

Abstract: Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide… ▽ More Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 $k_{B}μm^{-2}$) electronic specific heat of high mobility (> 50000 $cm^{2}V^{-1}s^{-1}$) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP $\leq$ 160 $pWHz^{-1/2}$), fast response time ($\leq 3.3 ns$) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date. △ Less

Submitted 21 April, 2020; originally announced April 2020.

Comments: This is the unedited authors' version of the submitted article, published in its final form at http://dx.doi.org/10.1021/acs.nanolett.9b05207 16 Pages, 4 Figures

Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

Authors: Maciej R. Molas, Anastasia V. Tyurnina, Viktor Zólyomi, Anna K. Ott, Daniel J. Terry, Matthew J. Hamer, Celal Yelgel, Adam Babiński, Albert G. Nasibulin, Andrea C. Ferrari, Vladimir I. Fal'ko, Roman Gorbachev

Abstract: III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-depe… ▽ More III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations. △ Less

Submitted 6 March, 2020; originally announced March 2020.

Comments: 6 pages, 5 figures

Journal ref: Faraday Discussions 227, 163 (2021)

Strongly coupled coherent phonons in single-layer MoS$_2$

Authors: C. Trovatello, H. P. C. Miranda, A. Molina-Sánchez, R. Borrego Varillas, C. Manzoni, L. Moretti, L. Ganzer, M. Maiuri, J. Wang, D. Dumcenco, A. Kis, L. Wirtz, A. Marini, G. Soavi, A. C. Ferrari, G. Cerullo, D. Sangalli, S. Dal Conte

Abstract: We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), wher… ▽ More We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A'_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Journal ref: ACS Nano 14, 5700 (2020)

Graphene/Polyelectrolyte Layer-by-Layer Coatings for Electromagnetic Interference Shielding

Authors: Cristina Valles, Xiao Zhang, Jianyun Cao, Fei Lin, Robert J. Young, Antonio Lombardo, Andrea C. Ferrari, Laura Burk, Rolf Mulhaupt, Ian A. Kinloch

Abstract: Electromagnetic interference (EMI) shielding coating materials with thicknesses in the microscale are required in many sectors, including communications, medical, aerospace and electronics, to isolate the electromagnetic radiation emitted from electronic equipment. We report a spray, layer-by-layer (LbL) coating approach to fabricate micron thick, highly-ordered and electrically-conductive coating… ▽ More Electromagnetic interference (EMI) shielding coating materials with thicknesses in the microscale are required in many sectors, including communications, medical, aerospace and electronics, to isolate the electromagnetic radiation emitted from electronic equipment. We report a spray, layer-by-layer (LbL) coating approach to fabricate micron thick, highly-ordered and electrically-conductive coatings with exceptional EMI shielding effectiveness (EMI SE >4830 dB/mm), through the alternating self-assembly of negatively-charged reduced graphene oxide (RGO) and a positively-charged polyelectrolyte (PEI). The microstructure and resulting electrical properties of the (PEI/RGO)n LbL structures are studied as function of increasing mass of graphene deposited per cycle (keeping the PEI content constant), number of deposited layers (n), flake diameter and type of RGO. A strong effect of the lateral flake dimensions on the electrical properties is observed, which also influences the EMI SE. A maximum EMI SE of 29 dB is obtained for a 6 um thick (PEI/RGO)10 coating with 19 vol.% loading of reduced electrochemically-exfoliated graphene oxide flakes with diameters ~3um. This SE performance exceeds those previously reported for thicker graphene papers and bulk graphene/polymer composite films with higher RGO or graphene nanoplatelets contents, which represents an important step towards the fabrication of thin and light-weight high-performance EMI shielding structures. △ Less

Submitted 25 June, 2019; originally announced June 2019.

Comments: 34 pages,7 figures

Screen-printed and spray coated graphene-based RFID transponders

Authors: K. Jaakkola, V. Ermolov, P. G. Karagiannidis, S. A. Hodge, L. Lombardi, X. Zhang, R. Grenman, H. Sandberg, A. Lombardo, A. C. Ferrari

Abstract: We report Ultra-High-Frequency (UHF, 800MHz-1GHz) Radio Frequency Identification (RFID) transponders consisting of printed dipole antennas combined with RFID microchips. These are fabricated on Kapton via screen printing and on paper via spray coating, using inks obtained via microfluidization of graphite. We introduce a hybrid antenna structure, where an Al loop (small compared to the overall siz… ▽ More We report Ultra-High-Frequency (UHF, 800MHz-1GHz) Radio Frequency Identification (RFID) transponders consisting of printed dipole antennas combined with RFID microchips. These are fabricated on Kapton via screen printing and on paper via spray coating, using inks obtained via microfluidization of graphite. We introduce a hybrid antenna structure, where an Al loop (small compared to the overall size of the antenna) is connected to a microchip with the double function of matching the impedances of antenna and microchip and avoiding bonding between exfoliated graphite and chip. The transponders have reading distance~11m at UHF RFID frequencies, larger than previously reported for graphene-based RFID and comparable with commercial transponders based on metallic antennas. △ Less

Submitted 3 March, 2019; originally announced June 2019.

Journal ref: 2d Materials 7, 015019 (2020)

Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom

Authors: M. Romagnoli, V. Sorianello, M. Midrio, F. H. L. Koppens, C. Huyghebaert, D. Neumaier, P. Galli, W. Templ, A. D'Errico, A. C. Ferrari

Abstract: Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10$^{-3}$. It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipa… ▽ More Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10$^{-3}$. It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for grapheme-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications. △ Less

Submitted 2 June, 2019; originally announced June 2019.

Journal ref: Nature Reviews Materials 3, 392(2018)

Graphene Overcoats for Ultra-High Storage Density Magnetic Media

Authors: N. Dwivedi, A. K. Ott, K. Sasikumar, C. Dou, R. J. Yeo, B. Narayanan, U. Sassi, D. De Fazio, G. Soavi, T. Dutta, S. K. R. S. Sankaranarayanan, A. C. Ferrari, C. S. Bhatia

Abstract: Hard disk drives (HDDs) are used as secondary storage in a number of digital electronic devices owing to low cost ($<$0.1\$/GB at 2016 prices) and large data storage capacity (10TB with a 3.5 inch HDD). Due to the exponentially increasing amount of data, there is a need to increase areal storage densities beyond$\sim$1Tb/in$^2$. This requires the thickness of carbon overcoats (COCs) to be$<… ▽ More Hard disk drives (HDDs) are used as secondary storage in a number of digital electronic devices owing to low cost ($<$0.1\$/GB at 2016 prices) and large data storage capacity (10TB with a 3.5 inch HDD). Due to the exponentially increasing amount of data, there is a need to increase areal storage densities beyond$\sim$1Tb/in$^2$. This requires the thickness of carbon overcoats (COCs) to be$<$2nm. Friction, wear, corrosion, and thermal stability are critical concerns$<$2nm, where most of the protective properties of current COCs are lost. This limits current technology and restricts COC integration with heat assisted magnetic recording technology (HAMR), since this also requires laser irradiation stability. Here we show that graphene-based overcoats can overcome all these limitations. 2-4 layers of graphene enable two-fold reduction in friction and provide better corrosion and wear than state-of-the-art COCs. A single graphene layer is enough to reduce corrosion$\sim$2.5 times. We also show that graphene can withstand HAMR conditions. Thus, graphene-based overcoats can enable ultrahigh areal density HDDs$>$10Tb/in$^2$. △ Less

Submitted 2 June, 2019; originally announced June 2019.

Journal ref: Nature Commun. 12, 2854 (2021)

Optoelectronic mixing with high frequency graphene transistors

Authors: Alberto Montanaro, Wei Wei, Domenico De Fazio, Ugo Sassi, Giancarlo Soavi, Andrea C Ferrari, Henri Happy, Pierre Legagneux, Emiliano Pallecchi

Abstract: Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave appl… ▽ More Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems. △ Less

Submitted 23 May, 2019; originally announced May 2019.

Waveguide-integrated, plasmonic enhanced graphene photodetectors

Authors: J. E. Muench, A. Ruocco, M. A. Giambra, V. Miseikis, D. Zhang, J. Wang, H. F. Y. Watson, G. C. Park, S. Akhavan, V. Sorianello, M. Midrio, A. Tomadin, C. Coletti, M. Romagnoli, A. C. Ferrari, I. Goykhman

Abstract: We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneou… ▽ More We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules △ Less

Submitted 11 May, 2019; originally announced May 2019.

Journal ref: Nano Lett 19, 7632 (2019)

High-mobility, wet-transferred graphene grown by chemical vapor deposition

Authors: D. De Fazio, D. G. Purdie, A. K. Ott, P. Braeuninger-Weimer, T. Khodkov, S. Goossens, T. Taniguchi, K. Watanabe, P. Livreri, F. H. L. Koppens, S. Hofmann, I. Goykhman, A. C. Ferrari, A. Lombardo

Abstract: We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. Th… ▽ More We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$\sim30000 cm^2 V^{-1} s^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000cm^2 V^{-1} s^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach. △ Less

Submitted 5 April, 2019; v1 submitted 2 April, 2019; originally announced April 2019.

Photocatalytic activity of exfoliated graphite-TiO$_2$ nanocomposites

Authors: Gloria Guidetti, Eva A. A. Pogna, Lucia Lombardi, Flavia Tomarchio, Iryna Polishchuk, Rick R. M. Joosten, Alessandro Ianiro, Giancarlo Soavi, Nico A. J. M. Sommerdijk, Heiner Friedrich, Boaz Pokroy, Anna K. Ott, Marco Goisis, Francesco Zerbetto, Giuseppe Falini, Matteo Calvaresi, Andrea C. Ferrari, Giulio Cerullo, Marco Montalti

Abstract: We investigate the photocatalytic performance of nanocomposites prepared in a one-step process by liquid-phase exfoliation of graphite in the presence of TiO$_2$ nanoparticles (NPs) at atmospheric pressure and in water, without heating or adding any surfactant, and starting from low-cost commercial reagents. The nanocomposites show enhanced photocatalytic activity, degrading up to 40$\%$ more poll… ▽ More We investigate the photocatalytic performance of nanocomposites prepared in a one-step process by liquid-phase exfoliation of graphite in the presence of TiO$_2$ nanoparticles (NPs) at atmospheric pressure and in water, without heating or adding any surfactant, and starting from low-cost commercial reagents. The nanocomposites show enhanced photocatalytic activity, degrading up to 40$\%$ more pollutants with respect to the starting TiO$_2$-NPs. In order to understand the photo-physical mechanisms underlying this enhancement, we investigate the photo-generation of reactive species (trapped holes and electrons) by ultrafast transient absorption spectroscopy. We observe an electron transfer process from TiO$_2$ to the graphite flakes within the first picoseconds of the relaxation dynamics, which causes the decrease of the charge recombination rate, and increases the efficiency of the reactive species photo-production. △ Less

Submitted 15 March, 2019; v1 submitted 13 March, 2019; originally announced March 2019.

Comments: 13 pages, 12 figures, 1 table

Niobium diselenide superconducting photodetectors

Authors: Gavin J. Orchin, Domenico De Fazio, Angelo Di Bernardo, Matthew Hamer, Duhee Yoon, Alisson R. Cadore, Ilya Goykhman, Kenji Watanabe, Takashi Taniguchi, Jason W. A. Robinson, Roman V. Gorbachev, Andrea C. Ferrari, Robert H. Hadfield

Abstract: We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical mapping in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken… ▽ More We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical mapping in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken by absorption of light, resulting in a voltage signal when the devices are current biased. The response found to be energy dependent making the devices useful for applications requiring energy resolution, such as bolometry, spectroscopy and infrared imaging. △ Less

Submitted 6 March, 2019; originally announced March 2019.

Comments: 6 pages, 6 figures

Hot electrons modulation of third harmonic generation in graphene

Authors: G. Soavi, G. Wang, H. Rostami, A. Tomadin, O. Balci, I. Paradeisanos, E. A. A. Pogna, G. Cerullo, E. Lidorikis, M. Polini, A. C. Ferrari

Abstract: Hot electrons dominate the ultrafast ($\sim$fs-ps) optical and electronic properties of metals and semiconductors and they are exploited in a variety of applications including photovoltaics and photodetection. We perform power-dependent third harmonic generation measurements on gated single-layer graphene and detect a significant deviation from the cubic power-law expected for a third harmonic gen… ▽ More Hot electrons dominate the ultrafast ($\sim$fs-ps) optical and electronic properties of metals and semiconductors and they are exploited in a variety of applications including photovoltaics and photodetection. We perform power-dependent third harmonic generation measurements on gated single-layer graphene and detect a significant deviation from the cubic power-law expected for a third harmonic generation process. We assign this to the presence of hot electrons. Our results indicate that the performance of nonlinear photonics devices based on graphene, such as optical modulators and frequency converters, can be affected by changes in the electronic temperature, which might occur due to increase of absorbed optical power or Joule heating. △ Less

Submitted 3 March, 2019; originally announced March 2019.

Journal ref: ACS Photonics 6, 2841 (2019)

Coherent anti-Stokes Raman Spectroscopy of single and multi-layer graphene

Authors: A. Virga, C. Ferrante, G. Batignani, D. De Fazio, A. D. G. Nunn, A. C. Ferrari, G. Cerullo, T. Scopigno

Abstract: We report stimulated Raman spectroscopy of the G phonon in both single and multi-layer graphene, through Coherent anti-Stokes Raman Scattering (CARS). The signal generated by the third order nonlinearity is dominated by a vibrationally non-resonant background (NVRB), which obscures the Raman lineshape. We demonstrate that the vibrationally resonant CARS peak can be measured by reducing the tempora… ▽ More We report stimulated Raman spectroscopy of the G phonon in both single and multi-layer graphene, through Coherent anti-Stokes Raman Scattering (CARS). The signal generated by the third order nonlinearity is dominated by a vibrationally non-resonant background (NVRB), which obscures the Raman lineshape. We demonstrate that the vibrationally resonant CARS peak can be measured by reducing the temporal overlap of the laser excitation pulses, suppressing the NVRB. We model the observed spectra, taking into account the electronically resonant nature of both CARS and NVRB. We show that CARS can be used for graphene imaging with vibrational sensitivity. △ Less

Submitted 21 January, 2019; originally announced January 2019.

Comments: 10 pages, 5 figures

Transform-limited photons from a coherent tin-vacancy spin in diamond

Authors: Matthew E. Trusheim, Benjamin Pingault, Noel H Wan, Mustafa Gundogan, Lorenzo De Santis, Romain Debroux, Dorian Gangloff, Carola Purser, Kevin C. Chen, Michael Walsh, Joshua J. Rose, Jonas N. Becker, Benjamin Lienhard, Eric Bersin, Ioannis Paradeisanos, Gang Wang, Dominika Lyzwa, Alejandro R-P. Montblanch, Girish Malladi, Hassaram Bakhru, Andrea C. Ferrari, Ian Walmsley, Mete Atature, Dirk Englund

Abstract: Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving an… ▽ More Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phononlimited with an exponential temperature scaling leading to $T_1$ $>$ 10 ms, and the coherence time, $T_2$ reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications. △ Less

Submitted 6 January, 2020; v1 submitted 19 November, 2018; originally announced November 2018.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 124, 023602 (2020)

Wavelength tunable soliton rains in a nanotube-mode locked Tm-doped fiber laser

Authors: B. Fu, D. Popa, Z. Zhao, S. A. Hussain, E. Flahaut, T. Hasan, A. C. Ferrari

Abstract: We report soliton rains in a tuneable Tm-doped fiber laser mode locked by carbon nanotubes. We also detect their second- and third-harmonic. We achieve a tuneability of over 56nm, from 1877 to 1933nm, by introducing a polarization-maintaining isolator and two in-line polarization controllers. This makes our system promising as a tuneable filter for ultrafast spectroscopy. We report soliton rains in a tuneable Tm-doped fiber laser mode locked by carbon nanotubes. We also detect their second- and third-harmonic. We achieve a tuneability of over 56nm, from 1877 to 1933nm, by introducing a polarization-maintaining isolator and two in-line polarization controllers. This makes our system promising as a tuneable filter for ultrafast spectroscopy. △ Less

Submitted 7 July, 2018; originally announced July 2018.

Journal ref: Appl. Phys. Lett. 113, 193102 (2018)

Graphene Reflectarray Metasurface for Terahertz Beam Steering and Phase Modulation

Authors: Michele Tamagnone, Santiago Capdevila, Antonio Lombardo, Jingbo Wu, Alba Centeno, Amaia Zurutuza, Adrian M. Ionescu, Andrea C. Ferrari, Juan R. Mosig

Abstract: We report a THz reflectarray metasurface which uses graphene as active element to achieve beam steering, shaping and broadband phase modulation. This is based on the creation of a voltage controlled reconfigurable phase hologram, which can impart different reflection angles and phases to an incident beam, replacing bulky and fragile rotating mirrors used for terahertz imaging. This can also find a… ▽ More We report a THz reflectarray metasurface which uses graphene as active element to achieve beam steering, shaping and broadband phase modulation. This is based on the creation of a voltage controlled reconfigurable phase hologram, which can impart different reflection angles and phases to an incident beam, replacing bulky and fragile rotating mirrors used for terahertz imaging. This can also find applications in other regions of the electromagnetic spectrum, paving the way to versatile optical devices including light radars, adaptive optics, electro-optical modulators and screens. △ Less

Submitted 11 June, 2018; v1 submitted 5 June, 2018; originally announced June 2018.

Comments: 16 pages, 10 figures

Direct observation of intravalley spin relaxation in single-layer WS$_2$

Authors: Z. Wang, A. Molina-Sanchez, P. Altmann, D. Sangalli, D. De Fazio, G. Soavi, U. Sassi, F. Bottegoni, F. Ciccacci, M. Finazzi, L. Wirtz, A. C. Ferrari, A. Marini, G. Cerullo, S. Dal Conte

Abstract: In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark exciton, consisting of an electron and a hole with opposite spin orientation, has lower energy than the A exciton. A possible mechanism leading to the transi… ▽ More In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark exciton, consisting of an electron and a hole with opposite spin orientation, has lower energy than the A exciton. A possible mechanism leading to the transition from bright to dark excitons involves the scattering of the electrons from the upper to the lower conduction band state in K. Here we exploit the valley selective optical selection rules and use two-color helicity-resolved pump-probe spectroscopy to directly measure the intravalley spin-flip relaxation dynamics of electrons in the conduction band of single-layer WS$_2$. This process occurs on a sub-ps time scale and it is significantly dependent on the temperature, indicative of a phonon-assisted relaxation. These experimental results are supported by time-dependent ab-initio calculations which show that the intra-valley spin-flip scattering occurs on significantly longer time scales only exactly at the K point. In a realistic situation the occupation of states away from the minimum of the conduction band leads to a dramatic reduction of the scattering time. △ Less

Submitted 16 May, 2018; originally announced May 2018.

Charge-tuneable biexciton complexes in monolayer WSe$_{2}$

Authors: Matteo Barbone, Alejandro R. -P. Montblanch, Dhiren M. Kara, Carmen Palacios-Berraquero, Alisson R. Cadore, Domenico De Fazio, Benjamin Pingault, Elaheh Mostaani, Han Li, Bin Chen, Kenji Watanabe, Takashi Taniguchi, Sefaattin Tongay, Gang Wang, Andrea C. Ferrari, Mete Atatüre

Abstract: Multi-exciton states such as biexcitons, albeit theoretically predicted, have remained challenging to identify in atomically thin transition metal dichalcogenides so far. Here, we use excitation-power, electric-field and magnetic-field dependence of photoluminescence to report direct experimental evidence of two biexciton complexes in monolayer tungsten diselenide: the neutral and the negatively c… ▽ More Multi-exciton states such as biexcitons, albeit theoretically predicted, have remained challenging to identify in atomically thin transition metal dichalcogenides so far. Here, we use excitation-power, electric-field and magnetic-field dependence of photoluminescence to report direct experimental evidence of two biexciton complexes in monolayer tungsten diselenide: the neutral and the negatively charged biexciton. We demonstrate bias-controlled switching between these two states, we determine their internal structure and we resolve a fine-structure splitting of 2.5 meV for the neutral biexciton. Our results unveil multi-particle exciton complexes in transition metal dichalcogenides and offer direct routes to their deterministic control in many-body quantum phenomena. △ Less

Submitted 13 May, 2018; originally announced May 2018.

Scalar Nanosecond Pulse Generation in a Nanotube Mode-Locked Environmentally Stable Fiber Laser

Authors: R. I. Woodward, E. J. R. Kelleher, D. Popa, T. Hasan, F. Bonaccorso, A. C. Ferrari, S. V. Popov, J. R. Taylor

Abstract: We report an environmentally stable nanotube mode-locked fibre laser producing linearly-polarized, nanosecond pulses. A simple all-polarization-maintaining fibre ring cavity is used, including 300 m of highly nonlinear fibre to elongate the cavity and increase intracavity dispersion and nonlinearity. The laser generates scalar pulses with a duration of 1.23 ns at a centre wavelength of 1042 nm, wi… ▽ More We report an environmentally stable nanotube mode-locked fibre laser producing linearly-polarized, nanosecond pulses. A simple all-polarization-maintaining fibre ring cavity is used, including 300 m of highly nonlinear fibre to elongate the cavity and increase intracavity dispersion and nonlinearity. The laser generates scalar pulses with a duration of 1.23 ns at a centre wavelength of 1042 nm, with 1.3-nm bandwidth and at 641-kHz repetition rate. Despite the long cavity, the output characteristics show no significant variation when the cavity is perturbed, and the degree of polarization remains at 97%. △ Less

Submitted 7 May, 2018; originally announced May 2018.

Journal ref: IEEE Photon, Tech. Lett. 26, 1672-1675 (2014)