Showing 1–50 of 114 results for author: Coletti, C

Rapid synthesis of uniformly small nickel nanoparticles for the surface functionalization of epitaxial graphene

Authors: Ylea Vlamidis, Stiven Forti, Antonio Rossi, Carmela Marinelli, Camilla Coletti, Stefan Heun, Stefano Veronesi

Abstract: Nickel nanoparticles (Ni NPs), thanks to their peculiar properties, are interesting materials for many applications including catalysis, hydrogen storage, and sensors. In this work, Ni NPs are synthesized in aqueous solution by a simple and rapid procedure with cetyltrimethylammonium bromide (CTAB) as a capping agent, and are extensively characterized by dynamic light scattering (DLS), scanning el… ▽ More Nickel nanoparticles (Ni NPs), thanks to their peculiar properties, are interesting materials for many applications including catalysis, hydrogen storage, and sensors. In this work, Ni NPs are synthesized in aqueous solution by a simple and rapid procedure with cetyltrimethylammonium bromide (CTAB) as a capping agent, and are extensively characterized by dynamic light scattering (DLS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We investigated their shape, dimension, and their distribution on the surfaces of SiO2 and epitaxial graphene (EG) samples. Ni NPs have an average diameter of ~11 nm, with a narrow size dispersion, and their arrangement on the surface is strongly dependent on the substrate. EG samples functionalized with Ni NPs are further characterized by X-ray photoelectron spectroscopy (XPS), as made and after thermal annealing above 350°C to confirm the degradation of CTAB and the presence of metallic Ni(0). Moreover, high resolution scanning tunneling microscopy (STM) topographies reveal the structural stability of the NPs up to 550 °C. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene

Authors: Alex Boschi, Zewdu M. Gebeyehu, Sergey Slizovskiy, Vaidotas Mišeikis, Stiven Forti, Antonio Rossi, Kenji Watanabe, Takashi Taniguchi, Fabio Beltram, Vladimir I. Fal'ko, Camilla Coletti, Sergio Pezzini

Abstract: Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric t… ▽ More Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric twistronic stack comprising both MLG and BLG, synthesized via low-pressure chemical vapor deposition (LP-CVD) on Cu. Although a large ($\sim30^{\circ}$) twist angle decouples the MLG and BLG electronic bands near Fermi level, we find that the layer degeneracy in the BLG subsystem is lifted, producing a gap in the absence of external fields. The built-in interlayer asymmetry originates from proximity-induced energy shifts in the outermost layers and requires a displacement field of $0.14$ V/nm to be compensated. The latter corresponds to a $\sim10$ meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Comments: 23 pages, 4 figures and supporting information

k-resolved ultrafast light-induced band renormalization in monolayer WS$_2$ on graphene

Authors: Niklas Hofmann, Alexander Steinhoff, Razvan Krause, Neeraj Mishra, Giorgio Orlandini, Stiven Forti, Camilla Coletti, Tim O. Wehling, Isabella Gierz

Abstract: Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In… ▽ More Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In this study, we investigate the transient electronic structure of monolayer WS$_2$ on a graphene substrate after resonant excitation of the A-exciton using time- and angle-resolved photoemission spectroscopy. We observe a pronounced band structure renormalization including a substantial reduction of the transient band gap that is in good quantitative agreement with our {\it ab initio} theory that reveals the importance of both intrinsic WS$_2$ and extrinsic substrate contributions to the transient band structure of monolayer WS$_2$. Our findings not only deepen the fundamental understanding of band structure dynamics in two-dimensional materials but also offer valuable insights for the development of novel electronic and optoelectronic devices based on monolayer TMDs and their heterostructures with graphene. △ Less

Submitted 2 May, 2024; originally announced May 2024.

Comments: 17 pages, 4 figures

Non-equilibrium carrier dynamics and band structure of graphene on 2D tin

Authors: Maria-Elisabeth Federl, Niklas Witt, Biao Yang, Niklas Hofmann, Johannes Gradl, Leonard Weigl, Ignacio Piquero-Zulaica, Johannes V. Barth, Neeraj Mishra, Camilla Coletti, Tim O. Wehling, Isabella Gierz

Abstract: Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered 2D metallic Sn phase with a $(1\times1)$ structure at the interface between SiC substrate and quasi-freestanding graphene. The 2D\,Sn phase exhibits exotic electronic properties with Dirac-like and flat bands coexisting close to the Fermi level that exhibit both Zeeman- and Rashba-type spin splittings. Possible inte… ▽ More Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered 2D metallic Sn phase with a $(1\times1)$ structure at the interface between SiC substrate and quasi-freestanding graphene. The 2D\,Sn phase exhibits exotic electronic properties with Dirac-like and flat bands coexisting close to the Fermi level that exhibit both Zeeman- and Rashba-type spin splittings. Possible inter-layer interactions between the 2D\,Sn layer and graphene that may result in emerging electronic properties remain unexplored. We use time- and angle-resolved photoemission spectroscopy to reveal a surprisingly short-lived non-equilibrium carrier distribution inside the Dirac cone of graphene. Further, we find that the graphene $π$-band exhibits a transient down-shift that we attribute to charging of the graphene layer with holes. We interpret our results with support from density functional theory calculations of the graphene - 2D\,Sn heterostructure that reveal a substantial hybridization between graphene $π$-band and Sn $p_z$-states that opens up a $\sim230$\,meV band gap inside the Dirac cone and delocalizes the charge carriers over both the graphene and 2D\,Sn layers. Our results have important implications for the design of future ultrafast optoelectronic devices that may find applications in the fields of light harvesting and detection, as supercapacitors, or in novel quantum computing technologies. △ Less

Submitted 2 May, 2024; originally announced May 2024.

Comments: 19 pages, 5 figures

Complementary asymptotic analysis for a minimal random walk

Authors: Cristian F. Coletti, Manuel González-Navarrete, Víctor Hugo Vázquez Guevara

Abstract: We discuss a complementary asymptotic analysis of the so called minimal random walk. More precisely, we present a version of the almost sure central limit theorem as well as a generalization of the recently proposed quadratic strong laws. In addition, alternative demonstrations of the functional limit theorems will be supplied based on a Pólya urn scheme instead of a martingale approach. We discuss a complementary asymptotic analysis of the so called minimal random walk. More precisely, we present a version of the almost sure central limit theorem as well as a generalization of the recently proposed quadratic strong laws. In addition, alternative demonstrations of the functional limit theorems will be supplied based on a Pólya urn scheme instead of a martingale approach. △ Less

Submitted 25 April, 2024; originally announced April 2024.

A stochastic differential equation approach for an SIS model with non-linear incidence rate

Authors: J. S. Builes, Cristian F. Coletti, Leon A. Valencia

Abstract: In this paper, we study an analytically tractable SIS model with a non-linear incidence rate for the number of infectious individuals described through a stochastic differential equation (SDE). We guarantee the existence of a positive solution, and we study its regularity. We study the persistence and extinction regimes, and we give sufficient conditions under which the disease-free equilibrium po… ▽ More In this paper, we study an analytically tractable SIS model with a non-linear incidence rate for the number of infectious individuals described through a stochastic differential equation (SDE). We guarantee the existence of a positive solution, and we study its regularity. We study the persistence and extinction regimes, and we give sufficient conditions under which the disease-free equilibrium point is an asymptotically stable equilibrium point with probability one. We provide sufficient conditions under which the model admits a unique stationary measure. Finally, we illustrate our findings using simulations. △ Less

Submitted 20 April, 2024; originally announced April 2024.

Asymptotic shape for subadditve processes on groups of polynomial growth

Authors: Cristian F. Coletti, Lucas R. de Lima

Abstract: This study delves into the exploration of the limiting shape theorem for subadditive processes on finitely generated groups with polynomial growth, commonly referred to as virtually nilpotent groups. Investigating the algebraic structures underlying these processes, we present a generalized form of the asymptotic shape theorem within this framework. Extending subadditive ergodic theory in this con… ▽ More This study delves into the exploration of the limiting shape theorem for subadditive processes on finitely generated groups with polynomial growth, commonly referred to as virtually nilpotent groups. Investigating the algebraic structures underlying these processes, we present a generalized form of the asymptotic shape theorem within this framework. Extending subadditive ergodic theory in this context, we consider processes which exhibit both at most and at least linear random growth. We conclude with applications and illustrative examples. △ Less

Submitted 25 April, 2024; v1 submitted 12 December, 2023; originally announced December 2023.

Comments: 36 pages, 1 figure; typos corrected, some lemmas revised

MSC Class: 52A22; 60F15 (Primary) 60K35 (Secondary)

Fluctuations of the occupation density for a parking process

Authors: Cristian F. Coletti, Sandro Gallo, Alejandro Roldán-Correa, León A. Valencia

Abstract: Consider the following simple parking process on $Λ_n := \{-n, \ldots, n\}^d,d\ge1$: at each step, a site $i$ is chosen at random in $Λ_n$ and if $i$ and all its nearest neighbor sites are empty, $i$ is occupied. Once occupied, a site remains so forever. The process continues until all sites in $Λ_n$ are either occupied or have at least one of their nearest neighbors occupied. The final configurat… ▽ More Consider the following simple parking process on $Λ_n := \{-n, \ldots, n\}^d,d\ge1$: at each step, a site $i$ is chosen at random in $Λ_n$ and if $i$ and all its nearest neighbor sites are empty, $i$ is occupied. Once occupied, a site remains so forever. The process continues until all sites in $Λ_n$ are either occupied or have at least one of their nearest neighbors occupied. The final configuration (occupancy) of $Λ_n$ is called the jamming limit and is denoted by $X_{Λ_n}$. Ritchie (2006) constructed a stationary random field on $\mathbb Z^d$ obtained as a (thermodynamic) limit of the $X_{Λ_n}$'s as $n$ tends to infinity. As a consequence of his construction, he proved a strong law of large numbers for the proportion of occupied sites in the box $Λ_n$ for the random field $X$. Here we prove the central limit theorem, the law of iterated logarithm, and a gaussian concentration inequality for the same statistics. A particular attention will be given to the case $d=1$, in which we also obtain new asymptotic properties for the sequence $X_{Λ_n},n\ge1$ as well as a new proof to the closed-form formula for the occupation density of the parking process. △ Less

Submitted 21 May, 2024; v1 submitted 16 November, 2023; originally announced November 2023.

Comments: 19 pages, 1 figure

MSC Class: 60K35

Growth and applications of two-dimensional single crystals

Authors: Zhibin Zhang, Stiven Forti, Wanqing Meng, Sergio Pezzini, Zehua Hu, Camilla Coletti, Xinran Wang, Kaihui Liu

Abstract: Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisi… ▽ More Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisite to realize 2D-based high-performance applications. In this review, we aim to provide an in-depth analysis of the state-of-the-art technology for the growth and applications of 2D materials, with particular emphasis on single crystals. We first summarize the major growth strategies for monolayer 2D single crystals. Following that, we discuss the growth of multilayer single crystals, including the control of thickness, stacking sequence, and heterostructure composition. Then we highlight the exploration of 2D single crystals in electronic and optoelectronic devices. Finally, a perspective is given to outline the research opportunities and the remaining challenges in this field. △ Less

Submitted 13 October, 2023; v1 submitted 12 October, 2023; originally announced October 2023.

Journal ref: 2D Mater. 10 032001 (2023)

Platinum-Decorated Graphene: Experimental Insight into Growth Mechanisms and Hydrogen Adsorption Properties

Authors: Letizia Ferbel, Stefano Veronesi, Ylea Vlamidis, Antonio Rossi, Leonardo Sabattini, Camilla Coletti, Stefan Heun

Abstract: The potential of graphene for hydrogen storage, coupled with the established role of Platinum as a catalyst for the hydrogen evolution reaction and the spillover effect, makes Pt-functionalized graphene a promising candidate for near-ambient hydrogen storage. This paper focuses on examining the process of Pt cluster formation on epitaxial graphene and assesses the suitability of the system as hydr… ▽ More The potential of graphene for hydrogen storage, coupled with the established role of Platinum as a catalyst for the hydrogen evolution reaction and the spillover effect, makes Pt-functionalized graphene a promising candidate for near-ambient hydrogen storage. This paper focuses on examining the process of Pt cluster formation on epitaxial graphene and assesses the suitability of the system as hydrogen storage material. Scanning tunneling microscopy unveils two primary pathways for Pt cluster growth. In the initial phase, up to ~1 ML of Pt coverage, Pt tends to randomly disperse and cover the graphene surface, while the cluster height remains essentially unchanged. Beyond a coverage of 3 ML, the nucleation of new layers on existing clusters becomes predominant. Then, the clusters mainly grow in height. Thermal desorption spectroscopy on hydrogenated Pt-decorated graphene reveals the presence of multiple hydrogen adsorption mechanisms, manifested as two Gaussian peaks superimposed on a linearly increasing background. We attribute the first peak at 150°C to hydrogen physisorbed on the surface of Pt clusters. The second peak at 430°C is attributed to chemisorption of hydrogen on the surface of the clusters, while the linearly increasing background is assigned to hydrogen bonded in the bulk of the Pt clusters. These measurements demonstrate the ability of Pt-functionalized graphene to store molecular hydrogen at temperatures that are high enough for stable hydrogen binding at room temperature. △ Less

Submitted 27 September, 2023; originally announced September 2023.

Scalable High-Mobility Graphene/hBN Heterostructures

Authors: Leonardo Martini, Vaidotas Mišeikis, David Esteban, Jon Azpeitia, Sergio Pezzini, Paolo Paletti, Michał Ochapski, Domenica Convertino, Mar Hernandez, Ignacio Jimenez, Camilla Coletti

Abstract: Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam-assisted physical vapor deposition directly on commercially available $SiO_2/Si$… ▽ More Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam-assisted physical vapor deposition directly on commercially available $SiO_2/Si$ and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition on copper. The structural, chemical, and electronic properties of the heterostructure were investigated by atomic force microscopy, Raman spectroscopy, and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding $10,000 cm^2/Vs$ in ambient conditions, 30% higher than those directly measured on $SiO_{2}/Si$. We prove the scalability of our approach by measuring more than 100 transfer length method devices over a centimeter scale, which present an average carrier mobility of $7500 \pm 850 cm^{2}/Vs$. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications. △ Less

Submitted 26 September, 2023; originally announced September 2023.

Journal ref: ACS Applied Matererials and Interfaces 2023, 15, 31, 3779-37801

Room temperature quantum Hall effect in a gated ferroelectric-graphene heterostructure

Authors: Anubhab Dey, Nathan Cottam, Oleg Makarovskiy, Wenjing Yan, Vaidotas Mišeikis, Camilla Coletti, James Kerfoot, Vladimir Korolkov, Laurence Eaves, Jasper F. Linnartz, Arwin Kool, Steffen Wiedmann, Amalia Patanè

Abstract: The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact resistance standards that can operate above cryogenic temperatures. However, this requires large magnetic fields that are accessible only in a few hi… ▽ More The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact resistance standards that can operate above cryogenic temperatures. However, this requires large magnetic fields that are accessible only in a few high magnetic field facilities. Here, we report on the quantum Hall effect in graphene encapsulated by the ferroelectric insulator CuInP2S6. Electrostatic gating of the graphene channel enables the Fermi energy to be tuned so that electrons in the localized states of the insulator are in equilibrium with the current-carrying, delocalized states of graphene. Due to the presence of strongly bound states in this hybrid system, a quantum Hall plateau can be achieved at room temperature in relatively modest magnetic fields. This phenomenon offers the prospect for the controlled manipulation of the quantum Hall effect at room temperature. △ Less

Submitted 26 May, 2023; originally announced May 2023.

Comments: 24 pages, 6 figures

Link between interlayer hybridization and ultrafast charge transfer in WS$_2$-graphene heterostructures

Authors: Niklas Hofmann, Leonard Weigl, Johannes Gradl, Neeraj Mishra, Giorgio Orlandini, Stiven Forti, Camilla Coletti, Simone Latini, Lede Xian, Angel Rubio, Dilan Perez Paredes, Raul Perea Causin, Samuel Brem, Ermin Malic, Isabella Gierz

Abstract: Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed micros… ▽ More Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed microscopic pathways are material specific as they sensitively depend on the band structures of the individual layers, the relative band alignment in the heterostructure, the twist angle between the layers, and interlayer interactions resulting in hybridization. We used time- and angle-resolved photoemission spectroscopy combined with tight binding and density functional theory electronic structure calculations to investigate ultrafast charge separation and recombination in WS$_2$-graphene vdW heterostructures. We identify several avoided crossings in the band structure and discuss their relevance for ultrafast charge transfer. We relate our own observations to existing theoretical models and propose a unified picture for ultrafast charge transfer in vdW heterostructures where band alignment and twist angle emerge as the most important control parameters. △ Less

Submitted 21 March, 2023; originally announced March 2023.

Comments: 8 pages, 5 figures

Strong Coupling of Coherent Phonons to Excitons in Semiconducting Monolayer MoTe$_2$

Authors: Charles J. Sayers, Armando Genco, Chiara Trovatello, Stefano Dal Conte, Vladislav Khaustov, Jorge Cervantes-Villanueva, Davide Sangalli, Alejandro Molina-Sanchez, Camilla Coletti, Christoph Gadermaier, Giulio Cerullo

Abstract: The coupling of the electron system to lattice vibrations and their time-dependent control and detection provides unique insight into the non-equilibrium physics of semiconductors. Here, we investigate the ultrafast transient response of semiconducting monolayer 2$H$-MoTe$_2$ encapsulated with $h$BN using broadband optical pump-probe microscopy. The sub-40-fs pump pulse triggers extremely intense… ▽ More The coupling of the electron system to lattice vibrations and their time-dependent control and detection provides unique insight into the non-equilibrium physics of semiconductors. Here, we investigate the ultrafast transient response of semiconducting monolayer 2$H$-MoTe$_2$ encapsulated with $h$BN using broadband optical pump-probe microscopy. The sub-40-fs pump pulse triggers extremely intense and long-lived coherent oscillations in the spectral region of the A' and B' exciton resonances, up to $\sim$20% of the maximum transient signal, due to the displacive excitation of the out-of-plane $A_{1g}$ phonon. Ab-initio calculations reveal a dramatic rearrangement of the optical absorption of monolayer MoTe$_2$ induced by an out-of-plane stretching and compression of the crystal lattice, consistent with an $A_{1g}$-type oscillation. Our results highlight the extreme sensitivity of the optical properties of monolayer TMDs to small structural modifications and their manipulation with light. △ Less

Submitted 15 February, 2023; originally announced February 2023.

Comments: 27 pages, 4 figures, supporting information

Journal ref: Nano Letters 2023 23 (20), 9235-9242

Infinite-dimensional genetic and evolution algebras generated by Gibbs measures

Authors: Cristian F. Coletti, Lucas R. de Lima, Denis A. Luiz

Abstract: Genetic and evolution algebras arise naturally from applied probability and stochastic processes. Gibbs measures describe interacting systems commonly studied in thermodynamics and statistical mechanics with applications in several fields. Here, we consider that the algebras are determined by configurations of finite spins on a countable set with their associated Gibbs distributions. The model pre… ▽ More Genetic and evolution algebras arise naturally from applied probability and stochastic processes. Gibbs measures describe interacting systems commonly studied in thermodynamics and statistical mechanics with applications in several fields. Here, we consider that the algebras are determined by configurations of finite spins on a countable set with their associated Gibbs distributions. The model preserves properties of the finite-dimensional Gibbs algebras found in the literature and extend their results. We introduce infertility in the genetic dynamics when the configurations differ macroscopically. It induces a decomposition of the algebra into a direct sum of fertile ideals with genetic realization. The proposed infinite-dimensional algebras are commutative, non-associative, with uncountable basis and zero divisors. The properties of Gibbs measures allow us to deal with the difficulties arising from the algebraic structure and obtain the results presented in this article. △ Less

Submitted 22 April, 2024; v1 submitted 13 December, 2022; originally announced December 2022.

Comments: 26 pages, 4 figures; typos corrected, references added

MSC Class: 17C92; 17D99; 82B20

Probing enhanced electron-phonon coupling in graphene by infrared resonance Raman spectroscopy

Authors: Tommaso Venanzi, Lorenzo Graziotto, Francesco Macheda, Simone Sotgiu, Taoufiq Ouaj, Elena Stellino, Claudia Fasolato, Paolo Postorino, Vaidotas Mišeikis, Marvin Metzelaars, Paul Kögerler, Bernd Beschoten, Camilla Coletti, Stefano Roddaro, Matteo Calandra, Michele Ortolani, Christoph Stampfer, Francesco Mauri, Leonetta Baldassarre

Abstract: We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite.… ▽ More We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite. Comparing with fully \textit{ab initio} theoretical calculations, we conclude that the observation is explained by an enhanced, momentum-dependent coupling between electrons and Brillouin zone-boundary optical phonons. This finding applies to two dimensional Dirac systems and has important consequences for the modeling of transport in graphene devices operating at room temperature. △ Less

Submitted 22 May, 2023; v1 submitted 2 December, 2022; originally announced December 2022.

Comments: 6 pages, 3 figures

Industrial graphene coating of low-voltage copper wires for power distribution

Authors: Neeraj Mishra, Ylea Vlamidis, Leonardo Martini, Arianna Lanza, Alex Jouvray, Marco La Sala, Mauro Gemmi, Vaidotas Mišeikis, Matthew Perry, Kenneth B. K. Teo, Stiven Forti, Camilla Coletti

Abstract: Copper (Cu) is the electrical conductor of choice in many categories of electrical wiring, with household and building installations being the major market of this metal. This work demonstrates the coating of Cu wires - with diameters relevant for low voltage (LV) applications - with graphene. The chemical vapor deposition (CVD) coating process is rapid, safe, scalable and industrially compatible.… ▽ More Copper (Cu) is the electrical conductor of choice in many categories of electrical wiring, with household and building installations being the major market of this metal. This work demonstrates the coating of Cu wires - with diameters relevant for low voltage (LV) applications - with graphene. The chemical vapor deposition (CVD) coating process is rapid, safe, scalable and industrially compatible. Graphene-coated Cu wires display oxidation resistance and increased electrical conductivity (up to 1% immediately after coating and up to 3% after 24 months), allowing for wire diameter reduction and thus significant savings in wire production costs. Combined spectroscopic and diffraction analysis indicate that the conductivity increase is due to a change in Cu crystallinity, induced by the coating process conditions, while electrical testing of aged wires shows that graphene plays a major role in maintaining improved electrical performances over long periods of time. Finally, graphene coating of Cu wires using an ambient pressure roll-to-roll (R2R) CVD reactor is demonstrated. This enables the in-line production of graphene-coated metallic wires as required for industrial scale-up. △ Less

Submitted 5 September, 2022; originally announced October 2022.

Comments: 13 pages, 5 figures

Report number: iit-22-09

On the role of reduced habitat in the phase transition of a stochastic model for seed dispersal

Authors: Cristian F. Coletti, Nevena Marić, Pablo M. Rodriguez

Abstract: Habitat loss is one of the biggest threats facing plant species nowadays. We formulate a simple mathematical model of seed dispersal on reduced habitats to discuss survival of the species in relation to the habitat size and seeds production rate. Seeds get dispersed around the mother plant via several agents in a random way. In our model seeds landing sites are distributed according to a homogeneo… ▽ More Habitat loss is one of the biggest threats facing plant species nowadays. We formulate a simple mathematical model of seed dispersal on reduced habitats to discuss survival of the species in relation to the habitat size and seeds production rate. Seeds get dispersed around the mother plant via several agents in a random way. In our model seeds landing sites are distributed according to a homogeneous Poisson point process with a constant rate on $\mathbb{R}$. We will assume that each seed will successfully germinate and grow into a new plant with the same characteristics as the mother plant. The time is discrete, scaled according to generations of plants or can represent years, since annual plants go through an entire growing cycle during one year. Then we will assume there are two symmetric barriers with respect to the origin and consider that the growth can not evolve past the barriers. Imposing barriers correspond to the physical limitation of the habitat. We appeal to tools of Probability Theory to formalize and study such a model, which can be seen as a discrete-time one-dimensional branching random walk with barriers. By means of coupling techniques and the comparison with suitably constructed multi-type branching processes we localize the critical parameter of the process around which there is survival with positive probability or extinction almost surely. In addition, we consider a discrete-space version of the model for which exact results are also obtained. △ Less

Submitted 30 July, 2022; originally announced August 2022.

MSC Class: 60J80; 60J85; 92D25

Hydrogen spillover and storage on graphene with single-site Ti catalysts

Authors: Jhih-Wei Chen, Shang-Hsien Hsieh, Sheng-Shong Wong, Ya-Chi Chiu, Hung-Wei Shiu, Chia-Hsin Wang, Yaw-Wen Yang, Yao-Jane Hsu, Domenica Convertino, Camilla Coletti, Stefan Heun, Chia-Hao Chen, Chung-Lin Wu

Abstract: Hydrogen spillover and storage for single-site metal catalysts, including single-atom catalysts (SACs) and single nanocluster catalysts, have been elucidated for various supports but remain poorly understood for inert carbon supports. Here, we use synchrotron radiation-based methods to investigate the role of single-site Ti catalysts on graphene for hydrogen spillover and storage. Our in-situ angl… ▽ More Hydrogen spillover and storage for single-site metal catalysts, including single-atom catalysts (SACs) and single nanocluster catalysts, have been elucidated for various supports but remain poorly understood for inert carbon supports. Here, we use synchrotron radiation-based methods to investigate the role of single-site Ti catalysts on graphene for hydrogen spillover and storage. Our in-situ angle-resolved photoemission spectra results demonstrate a bandgap opening and the X-ray absorption spectra reveal the formation of C-H bonds, both indicating the partial graphene hydrogenation. With increasing Ti deposition and H2 exposure, the Ti atoms tend to aggregate to form nanocluster catalysts and yield 13.5% sp3-hybridized carbon atoms corresponding to a hydrogen-storage capacity of 1.11 wt% (excluding the weight of the Ti nanoclusters [1]). Our results demonstrate how a simple spillover process at Ti SACs can lead to covalent hydrogen bonding on graphene, thereby providing a strategy for a rational design of carbon-supported single-site catalysts. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Journal ref: ACS Energy Lett. 2022, 7, 2297-2303

Strain-engineered wrinkles on graphene using polymeric actuators

Authors: Davide Giambastiani, Cosimo Tommasi, Federica Bianco, Filippo Fabbri, Camilla Coletti, Alessandro Tredicucci, Alessandro Pitanti, Stefano Roddaro

Abstract: The electronic and optical properties of graphene can be precisely tuned by generating deterministic arrangements of strain features. In this paper, we report the formation of widespread and controlled buckling delamination of monolayer graphene deposited on hexagonal boron-nitride promoted by a significant squeezing of the graphene flake and induced by polymeric micro-actuators. The flexibility o… ▽ More The electronic and optical properties of graphene can be precisely tuned by generating deterministic arrangements of strain features. In this paper, we report the formation of widespread and controlled buckling delamination of monolayer graphene deposited on hexagonal boron-nitride promoted by a significant squeezing of the graphene flake and induced by polymeric micro-actuators. The flexibility of this method offers a promising technique to create arbitrary buckling geometries and arrays of wrinkles which could also be subjected to iterative folding-unfolding cycles. Further development of this method could pave the way to tune the properties of several kinds of other two-dimensional materials, such as transition metal dichalcogenides, by tailoring their surface topography. △ Less

Submitted 31 August, 2022; v1 submitted 21 May, 2022; originally announced June 2022.

Journal ref: Phys. Rev. Applied 18, 024069 (2022)

Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene

Authors: Giulia Piccinini, Vaidotas Mišeikis, Pietro Novelli, Kenji Watanabe, Takashi Taniguchi, Marco Polini, Camilla Coletti, Sergio Pezzini

Abstract: To realize the applicative potential of 2D twistronic devices, scalable synthesis and assembly techniques need to meet stringent requirements in terms of interface cleanness and twist-angle homogeneity. Here, we show that small-angle twisted bilayer graphene assembled from separated CVD-grown graphene single-crystals can ensure high-quality transport properties, determined by a device-scale-unifor… ▽ More To realize the applicative potential of 2D twistronic devices, scalable synthesis and assembly techniques need to meet stringent requirements in terms of interface cleanness and twist-angle homogeneity. Here, we show that small-angle twisted bilayer graphene assembled from separated CVD-grown graphene single-crystals can ensure high-quality transport properties, determined by a device-scale-uniform moireé potential. Via low-temperature dual-gated magnetotransport, we demonstrate the hallmarks of a $2.4^\circ$ -twisted superlattice, including tunable regimes of interlayer coupling, reduced Fermi velocity, large interlayer capacitance, and density-independent Brown-Zak oscillations. The observation of these moiré-induced electrical transport features establishes CVD-based twisted bilayer graphene as an alternative to 'tear-and-stack' exfoliated flakes for fundamental studies, while serving as a proof-of-concept for future large-scale assembly. △ Less

Submitted 4 July, 2022; v1 submitted 29 March, 2022; originally announced March 2022.

Comments: This is the unedited authors' version of the submitted article, published in its final form on Nano Letters 2022 at https://pubs.acs.org/doi/full/10.1021/acs.nanolett.2c01114 , main text, 17 pages, 4 figures

Black Phosphorus n-type doping by Cu: a microscopic surface investigation

Authors: Abhishek Kumar, Francesca Telesio, Deborah Prezzi, Claudia Cardoso, Alessandra Catellani, Stiven Forti, Camilla Coletti, Manuel Serrano-Ruiz, Maurizio Peruzzini, Fabio Beltram, Stefan Heun

Abstract: We study surface charge transfer doping of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential… ▽ More We study surface charge transfer doping of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential of the local investigation, showing that the n-type doping effect of copper on bP is short-ranged. These experimental results are substantiated by first-principles simulations, which quantify the role of cluster size for an effective n-type doping of bP and explain the Coulomb blockade by an electronic decoupling of the topmost bP layer from the underlying layers driven by the copper cluster. Our results provide novel understanding, difficult to retrieve by transport measurements, of the doping of bP by copper, which appears promising for the implementation of ultra-sharp p-n junctions in bP. △ Less

Submitted 3 January, 2022; originally announced January 2022.

Journal ref: J. Phys. Chem. C 2021, 125, 13477-13484

Limiting shape for First-Passage Percolation models on Random Geometric Graphs

Authors: Cristian F. Coletti, Lucas R. de Lima, Alexander Hinsen, Benedikt Jahnel, Daniel Valesin

Abstract: Let a random geometric graph be defined in the supercritical regime for the existence of a unique infinite connected component in Euclidean space. Consider the first-passage percolation model with independent and identically distributed random variables on the random infinite connected component. We provide sufficient conditions for the existence of the asymptotic shape and we show that the shape… ▽ More Let a random geometric graph be defined in the supercritical regime for the existence of a unique infinite connected component in Euclidean space. Consider the first-passage percolation model with independent and identically distributed random variables on the random infinite connected component. We provide sufficient conditions for the existence of the asymptotic shape and we show that the shape is an Euclidean ball. We give some examples exhibiting the result for Bernoulli percolation and the Richardson model. For the Richardson model we further show that it converges weakly to a nonstandard branching process in the joint limit of large intensities and slow passage times. △ Less

Submitted 10 January, 2023; v1 submitted 16 September, 2021; originally announced September 2021.

Comments: 23 pages, 3 figures. The references were upadted in the latest versions and typographical errors corrected

MSC Class: Primary: 52A22; 60F15; Secondary: 60K35

Journal ref: Journal of Applied Probability, 1-19 (2023)

Parallel transport and layer-resolved thermodynamic measurements in twisted bilayer graphene

Authors: Giulia Piccinini, Vaidotas Mišeikis, Kenji Watanabe, Takashi Taniguchi, Camilla Coletti, Sergio Pezzini

Abstract: We employ dual-gated 30°-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a simple phenomenology of parallel conduction between two pristine graphene sheets, with a gate-controlled carrier distribution. Based on the parallel transport mechanism… ▽ More We employ dual-gated 30°-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a simple phenomenology of parallel conduction between two pristine graphene sheets, with a gate-controlled carrier distribution. Based on the parallel transport mechanism, we then introduce a method for in situ measurements of the chemical potential of the two layers. This twist-enabled approach, neither requiring a dielectric spacer, nor separate contacting, has the potential to greatly simplify the measurement of thermodynamic quantities in graphene-based systems of high current interest. △ Less

Submitted 11 January, 2022; v1 submitted 14 September, 2021; originally announced September 2021.

Comments: This is the unedited authors' version of the submitted article, published in Phys. Rev. B 104, L241410 (2021), 23 pages, main text and supplementary information

Ultra-clean high-mobility graphene on technologically relevant substrates

Authors: Ayush Tyagi, Vaidotas Mišeikis, Leonardo Martini, Stiven Forti, Neeraj Mishra, Zewdu M. Gebeyehu, Marco A. Giambra, Jihene Zribi, Mathieu Frégnaux, Damien Aureau, Marco Romagnoli, Fabio Beltram, Camilla Coletti

Abstract: Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room te… ▽ More Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room temperature) to reduce device losses and implement compact device design. To date, these mobility values are only obtained when suspending or encapsulating graphene. Here, we demonstrate a rapid, facile, and scalable cleaning process, that yields high-mobility graphene directly on the most common technologically relevant substrate: silicon dioxide on silicon (SiO$_2$/Si). Atomic force microscopy (AFM) and spatially-resolved X-ray photoelectron spectroscopy (XPS) demonstrate that this approach is instrumental to rapidly eliminate most of the polymeric residues which remain on graphene after transfer and fabrication and that have adverse effects on its electrical properties. Raman measurements show a significant reduction of graphene doping and strain. Transport measurements of 50 Hall bars (HBs) yield hole mobility $μ_h$ up to 9000 $cm^2 V^{-1} s^{-1}$ and electron mobility $μ_e$ up to 8000 $cm^2 V^{-1} s^{-1}$, with average values $μ_h$ 7500 $cm^2 V^{-1} s^{-1}$ and $μ_e$ 6300 $cm^2 V^{-1} s^{-1}$. The carrier mobility of ultraclean graphene reach values nearly double of that measured in graphene HBs processed with acetone cleaning, which is the method widely adopted in the field. Notably, these mobility values are obtained over large-scale and without encapsulation, thus paving the way to the adoption of graphene in optoelectronics and photonics. △ Less

Submitted 1 September, 2021; originally announced September 2021.

Comments: 20 pages, 11 figures

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

Authors: Gaia Ciampalini, Filippo Fabbri, Guido Menichetti, Luca Buoni, Simona Pace, Vaidotas Mišeikis, Alessandro Pitanti, Dario Pisignano, Camilla Coletti, Alessandro Tredicucci, Stefano Roddaro

Abstract: We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photolum… ▽ More We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photoluminescence spectroscopies. Transconductance curves of MoS2 are compared with the current-voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. Based on ab-initio modeling, the effect is understood in terms of trapping by sulfur vacancies, which counter-intuitively depends on the field-effect, even though the graphene contact layer is positioned between the backgate and the MoS2 channel. △ Less

Submitted 19 January, 2022; v1 submitted 4 August, 2021; originally announced August 2021.

Reconciling Experimental and Theoretical Vibrational Deactivation in Low-Energy O+N$_2$ Collisions

Authors: Qizhen Hong, Massimiliano Bartolomei, Fabrizio Esposito, Cecilia Coletti, Quanhua Sun, Fernando Pirani

Abstract: Molecular dynamics calculations of inelastic collisions of atomic oxygen with molecular nitrogen are known to show orders of magnitude discrepancies with experimental results in the range from room temperature to many thousands of degrees Kelvin. In this work, we have achieved an unprecedented quantitative agreement with experiments even at low temperature, by including a non-adiabatic treatment i… ▽ More Molecular dynamics calculations of inelastic collisions of atomic oxygen with molecular nitrogen are known to show orders of magnitude discrepancies with experimental results in the range from room temperature to many thousands of degrees Kelvin. In this work, we have achieved an unprecedented quantitative agreement with experiments even at low temperature, by including a non-adiabatic treatment involving vibronic states on newly developed potential energy surfaces. This result paves the way to the calculation of accurate and detailed databases of vibrational energy exchange rates for this collisional system. This is bound to have an impact on air plasma simulations in a wide range of conditions and on the development of Very Low Earth Orbit (VLEO) satellites, operating in the low thermosphere, objects of great technological interest due to their potential at a competitive cost. △ Less

Submitted 13 April, 2021; originally announced April 2021.

Comments: 17 pages, 8 figures

Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons

Authors: Eva A. A. Pogna, Xiaoyu Jia, Alessandro Principi, Alexander Block, Luca Banszerus, Jincan Zhang, Xiaoting Liu, Thibault Sohier, Stiven Forti, Karuppasamy Soundarapandian, Bernat Terrés, Jake D. Mehew, Chiara Trovatello, Camilla Coletti, Frank H. L. Koppens, Mischa Bonn, Niek van Hulst, Matthieu J. Verstraete, Hailin Peng, Zhongfan Liu, Christoph Stampfer, Giulio Cerullo, Klaas-Jan Tielrooij

Abstract: Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the dif… ▽ More Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices. △ Less

Submitted 5 March, 2021; originally announced March 2021.

On the survival of Floquet-Bloch states in the presence of scattering

Authors: S. Aeschlimann, S. A. Sato, R. Krause, M. Chávez-Cervantes, U. De Giovannini, H. Hübener, S. Forti, C. Coletti, K. Hanff, K. Rossnagel, A. Rubio, I. Gierz

Abstract: Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy… ▽ More Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy with time-dependent density functional theory and a two-level model with relaxation to investigate the survival of Floquet-Bloch states in the presence of scattering. We find that Floquet-Bloch states will be destroyed if scattering -- activated by electronic excitations -- prevents the Bloch electrons from following the driving field coherently. The two-level model also shows that Floquet-Bloch states reappear at high field intensities where energy exchange with the driving field dominates over energy dissipation to the bath. Our results clearly indicate the importance of long scattering times combined with strong driving fields for the successful realization of various Floquet phenomena. △ Less

Submitted 25 February, 2021; originally announced February 2021.

Comments: 27 pages, 5 figues

Microscopic understanding of ultrafast charge transfer in van-der-Waals heterostructures

Authors: R. Krause, S. Aeschlimann, M. Chavez-Cervantes, R. Perea-Causin, S. Brem, E. Malic, S. Forti, F. Fabbri, C. Coletti, I. Gierz

Abstract: Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined w… ▽ More Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined with microscopic many-particle theory to reveal the relevant microscopic charge transfer channels in epitaxial WS$_2$/graphene heterostructures. We find that the timescale for efficient ultrafast charge separation in the material is determined by direct tunneling at those points in the Brillouin zone where WS$_2$ and graphene bands cross, while the lifetime of the charge separated transient state is set by defect-assisted tunneling through localized sulphur vacanices. The subtle interplay of intrinsic and defect-related charge transfer channels revealed in the present work can be exploited for the design of highly efficient light harvesting and detecting devices. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Comments: 37 pages, 16 figures

Thermal stability of monolayer $WS_2$ in BEOL conditions

Authors: Simona Pace, Marzia Ferrera, Domenica Convertino, Giulia Piccinini, Michele Magnozzi, Neeraj Mishra, Stiven Forti, Francesco Bisio, Maurizio Canepa, Filippo Fabbri, Camilla Coletti

Abstract: Monolayer tungsten disulfide ($WS_2$) has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer $WS_2$ in BEOL fabrication conditions should be studied. In this work, th… ▽ More Monolayer tungsten disulfide ($WS_2$) has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer $WS_2$ in BEOL fabrication conditions should be studied. In this work, the thermal stability of monolayer single-crystal $WS_2$ at typical BEOL conditions is investigated; namely (i) heating temperature of $300$ $^\circ C$, (ii) pressures in the medium- ($10^{-3}$ mbar) and high- ($10^{-8}$ mbar) vacuum range; (iii) heating times from $30$ minutes to $20$ hours. Structural, optical and chemical analyses of $WS_2$ are performed via scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). It is found that monolayer single-crystal $WS_2$ is intrinsically stable at these temperature and pressures, even after $20$ hours of thermal treatment. The thermal stability of $WS_2$ is also preserved after exposure to low-current electron beam ($12$ pA) or low-fluence laser ($0.9$ $mJ/μm^2$), while higher laser fluencies cause photo-activated degradation upon thermal treatment. These results are instrumental to define fabrication and in-line monitoring procedures that allow the integration of $WS_2$ in device fabrication flows without compromising the material quality. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Comments: 21 pages, 5 figures

Wafer-scale integration of graphene-based photonic devices

Authors: Marco A. Giambra, Vaidotas Mišeikis, Sergio Pezzini, Simone Marconi, Alberto Montanaro, Filippo Fabbri, Vito Sorianello, Andrea C. Ferrari, Camilla Coletti, Marco Romagnoli

Abstract: Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour depositi… ▽ More Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour deposition (CVD) of single layer graphene (SLG) matrices comprising up to ~12000 individual single crystals (SCs), grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ~80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ~5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ~0.25, 0.45, 0.75, 1 dB V-1 for device lengths ~30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hBN is used to protected SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. Our full process flow (from growth to device fabrication) enables the commercial implementation of graphene-based photonic devices. △ Less

Submitted 9 February, 2021; v1 submitted 18 November, 2020; originally announced December 2020.

Comments: 30 pages, 9 Figures

Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction

Authors: Miriam Galbiati, Luca Persichetti, Paola Gori, Olivia Pulci, Marco Bianchi, Luciana Di Gaspare, Jerry Tersoff, Camilla Coletti, Philip Hofmann, Monica De Seta, Luca Camilli

Abstract: Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first principle calculations we build a model that successfully reproduces the experimental observations. Since the ab… ▽ More Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first principle calculations we build a model that successfully reproduces the experimental observations. Since the ability to modify graphene electronic properties is of fundamental importance when it comes to applications, our results provide an important contribution towards the integration of graphene with conventional semiconductors. △ Less

Submitted 26 March, 2021; v1 submitted 16 October, 2020; originally announced October 2020.

Journal ref: The Journal of Physical Chemistry Letters 2021 12 (4), 1262-1267

Generic spectrum of the weighted Laplacian operator on Cayley graphs

Authors: Cristian F. Coletti, Lucas R. de Lima, Diego S. de Oliveira, Marcus A. M. Marrocos

Abstract: In this paper, we investigate the spectrum of a class of weighted Laplacians on Cayley graphs and determine under what conditions the corresponding eigenspaces are generically irreducible. Specifically, we analyze the spectrum on left-invariant Cayley graphs endowed with an invariant metric, and we give some criteria for generically irreducible eigenspaces. Additionally, we introduce an operator t… ▽ More In this paper, we investigate the spectrum of a class of weighted Laplacians on Cayley graphs and determine under what conditions the corresponding eigenspaces are generically irreducible. Specifically, we analyze the spectrum on left-invariant Cayley graphs endowed with an invariant metric, and we give some criteria for generically irreducible eigenspaces. Additionally, we introduce an operator that is comparable to the Laplacian and show that the same criterion holds. △ Less

Submitted 17 May, 2024; v1 submitted 16 September, 2020; originally announced September 2020.

Comments: 18 pages, 2 figures; typos corrected

MSC Class: 05C50; 47A75; 47A55

Journal ref: Lett Math Phys 114, 75 (2024)

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

Authors: Vaidotas Mišeikis, Simone Marconi, Marco A. Giambra, Alberto Montanaro, Leonardo Martini, Filippo Fabbri, Sergio Pezzini, Giulia Piccinini, Stiven Forti, Bernat Terrés, Ilya Goykhman, Louiza Hamidouche, Pierre Legagneux, Vito Sorianello, Andrea C. Ferrari, Frank H. L. Koppens, Marco Romagnoli, Camilla Coletti

Abstract: We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and… ▽ More We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity 8 x 10$^{10}$ $cm^{-2}$ at the charge neutrality point, and a large Seebeck coefficient 140 $μ$V K$^{-1}$, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices. △ Less

Submitted 11 September, 2020; originally announced September 2020.

Comments: 15 pages, 11 figures. Published under ACS AuthorChoice license

Journal ref: ACS Nano 14, 11190 (2020)

Stress-strain in electron-beam activated polymeric micro-actuators

Authors: Davide Giambastiani, Fabio Dispinzeri, Francesco Colangelo, Stiven Forti, Camilla Coletti, Alessandro Tredicucci, Alessandro Pitanti, Stefano Roddaro

Abstract: Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two dimensional (2D) materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article we report a detailed investigation on electron-induced stress on poly-methyl-methacrylate (PMMA) thin fil… ▽ More Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two dimensional (2D) materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article we report a detailed investigation on electron-induced stress on poly-methyl-methacrylate (PMMA) thin film material. After an assessment of stress values using a method based on dielectric cantilevers, we directly investigate the lateral shrinkage of PMMA patterns on epitaxial graphene, which reveals a universal behavior, independent of the electron acceleration energy. By knowing the stress-strain curve, we finally estimate an effective Young's modulus of PMMA on top of graphene which is a relevant parameter for PMMA based electron-beam lithography and strain engineering applications. △ Less

Submitted 5 July, 2020; originally announced July 2020.

The role of multiple repetitions on the size of a rumor

Authors: Alejandra Rada, Cristian F. Coletti, Elcio Lebensztayn, Pablo M. Rodriguez

Abstract: We propose a mathematical model to measure how multiple repetitions may influence in the ultimate proportion of the population never hearing a rumor during a given outbreak. The model is a multi-dimensional continuous-time Markov chain that can be seen as a generalization of the Maki-Thompson model for the propagation of a rumor within a homogeneously mixing population. In the well-known basic mod… ▽ More We propose a mathematical model to measure how multiple repetitions may influence in the ultimate proportion of the population never hearing a rumor during a given outbreak. The model is a multi-dimensional continuous-time Markov chain that can be seen as a generalization of the Maki-Thompson model for the propagation of a rumor within a homogeneously mixing population. In the well-known basic model, the population is made up of "spreaders", "ignorants" and "stiflers", and any spreader attempts to transmit the rumor to the other individuals via directed contacts. In case the contacted individual is an ignorant, it becomes a spreader, while in the other two cases the initiating spreader turns into a stifler. The process in a finite population will eventually reach an equilibrium situation, where individuals are either stiflers or ignorants. We generalize the model by assuming that each ignorant becomes a spreader only after hearing the rumor a predetermined number of times. We identify and analyze a suitable limiting dynamical system of the model, and we prove limit theorems that characterize the ultimate proportion of individuals in the different classes of the population. △ Less

Submitted 7 May, 2021; v1 submitted 14 June, 2020; originally announced June 2020.

Comments: Revised version accepted for publication at SIAM Journal on Applied Dynamical Systems

MSC Class: 60K35

Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper

Authors: Chamseddine Bouhafs, Sergio Pezzini, Neeraj Mishra, Vaidotas Mišeikis, Yuran Niu, Claudia Struzzi, Alexei A. Zakharov, Stiven Forti, Camilla Coletti

Abstract: Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size.… ▽ More Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size. In this work, rhombohedral graphene with thickness up to 9 layers and areas up to ~50 micrometers square is grown via chemical vapor deposition (CVD) on suspended Cu foils and transferred onto target substrates via etch-free delamination. The domains of rhombohedral FLG are identified by Raman spectroscopy and are found to alternate with domains of Bernal-stacked FLG within the same crystal in a stripe-like configuration. A combined analysis of micro-Raman mapping, atomic force microscopy and optical microscopy indicates that the formation of rhombohedral-stacked FLG is strongly correlated to the copper substrate morphology. Cu step bunching results in bending of FLG and interlayer displacement along preferential crystallographic orientations, as determined experimentally by electron microscopy, thus inducing the stripe-like domains. The growth and transfer of rhombohedral FLG with the reported thickness and size shall facilitate the observation of predicted unconventional physics and ultimately add to its technological relevance. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: 27 pages, 4 Figures, 9 Supplementary Figures

Journal ref: Carbon 177 (2021) 282-290

Photo Thermal Effect Graphene Detector Featuring 105 Gbit s-1 NRZ and 120 Gbit s-1 PAM4 Direct Detection

Authors: S. Marconi, M. A. Giambra, A. Montanaro, V. Mišeikis, S. Soresi, S. Tirelli, P. Galli, F. Buchali, W. Templ, C. Coletti, V. Sorianello, M. Romagnoli

Abstract: The challenge of next generation datacom and telecom communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Silicon (Si) photonics has emerged as a viable solution to reach these objectives. Graphene, a single-atom thick layer of carbon5, has been recently proposed to be integrated with Si photonics because of its v… ▽ More The challenge of next generation datacom and telecom communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Silicon (Si) photonics has emerged as a viable solution to reach these objectives. Graphene, a single-atom thick layer of carbon5, has been recently proposed to be integrated with Si photonics because of its very high mobility, fast carrier dynamics and ultra-broadband optical properties. Here, we focus on graphene photodetectors for high speed datacom and telecom applications. High speed graphene photodetectors have been demonstrated so far, however the most are based on the photo-bolometric (PB) or photo-conductive (PC) effect. These devices are characterized by large dark current, in the order of milli-Amperes , which is an impairment in photo-receivers design, Photo-thermo-electric (PTE) effect has been identified as an alternative phenomenon for light detection. The main advantages of PTE-based photodetectors are the optical power to voltage conversion, zero-bias operation and ultra-fast response. Graphene PTE-based photodetectors have been reported in literature, however high-speed optical signal detection has not been shown. Here, we report on an optimized graphene PTE-based photodetector with flat frequency response up to 65 GHz. Thanks to the optimized design we demonstrate a system test leading to direct detection of 105 Gbit s-1 non-return to zero (NRZ) and 120 Gbit s-1 4-level pulse amplitude modulation (PAM) optical signals △ Less

Submitted 2 June, 2020; originally announced June 2020.

Limit theorems for a random walk with memory perturbed by a dynamical system

Authors: Cristian F. Coletti, Lucas R. de Lima, Renato J. Gava, Denis A. Luiz

Abstract: We introduce a new random walk with unbounded memory obtained as a mixture of the Elephant Random Walk and the Dynamic Random Walk which we call the Dynamic Elephant Random Walk (DERW). As a consequence of this mixture the distribution of the increments of the resulting random process is time dependent. We prove a strong law of large numbers for the DERW and, in a particular case, we provide an ex… ▽ More We introduce a new random walk with unbounded memory obtained as a mixture of the Elephant Random Walk and the Dynamic Random Walk which we call the Dynamic Elephant Random Walk (DERW). As a consequence of this mixture the distribution of the increments of the resulting random process is time dependent. We prove a strong law of large numbers for the DERW and, in a particular case, we provide an explicit expression for its speed. Finally, we give sufficient conditions for the central limit theorem and the law of the iterated logarithm to hold. △ Less

Submitted 3 February, 2021; v1 submitted 14 May, 2020; originally announced May 2020.

Comments: We corrected a typo in the definition of the ERW

Journal ref: J. Math. Phys. 61, 103303 (2020)

Graphene Plasmonic Fractal Metamaterials for Broadband Photodetectors

Authors: Francesco De Nicola, Nikhil Santh Puthiya Purayil, Vaidotas Miŝeikis, Davide Spirito, Andrea Tomadin, Camilla Coletti, Marco Polini, Roman Krahne, Vittorio Pellegrini

Abstract: Metamaterials have recently established a new paradigm for enhanced light absorption in state-of-the-art photodetectors. Here, we demonstrate broadband, highly efficient, polarization-insensitive, and gate-tunable photodetection at room temperature in a novel metadevice based on gold/graphene Sierpinski carpet plasmonic fractals. We observed an unprecedented internal quantum efficiency up to 100%… ▽ More Metamaterials have recently established a new paradigm for enhanced light absorption in state-of-the-art photodetectors. Here, we demonstrate broadband, highly efficient, polarization-insensitive, and gate-tunable photodetection at room temperature in a novel metadevice based on gold/graphene Sierpinski carpet plasmonic fractals. We observed an unprecedented internal quantum efficiency up to 100% from the near-infrared to the visible range with an upper bound of optical detectivity of $10^{11}$ Jones and a gain up to $10^{6}$, which is a fingerprint of multiple hot carriers photogenerated in graphene. Also, we show a 100-fold enhanced photodetection due to highly focused (up to a record factor of $|E/E_{0}|\approx20$ for graphene) electromagnetic fields induced by electrically tunable multimodal plasmons, spatially localized in self-similar fashion on the metasurface. Our findings give direct insight into the physical processes governing graphene plasmonic fractal metamaterials. The proposed structure represents a promising route for the realization of a broadband, compact, and active platform for future optoelectronic devices including multiband bio/chemical and light sensors. △ Less

Submitted 13 May, 2020; originally announced May 2020.

Comments: 10 pages, 6 figures

Journal ref: Sci. Rep. 10 (2020) 1-10

High-quality electrical transport using scalable CVD graphene

Authors: Sergio Pezzini, Vaidotas Mišeikis, Simona Pace, Francesco Rossella, Kenji Watanabe, Takashi Taniguchi, Camilla Coletti

Abstract: Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliate… ▽ More Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliated flakes. hBN is used to encapsulate the graphene crystals $-$ without taking part to their detachment from the growth catalyst $-$ and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to $\sim1.3 \times10^5$ cm$^2$V$^{-1}$s$^{-1}$ at $\sim10^{11}$ cm$^{-2}$ concentration. At cryogenic temperatures, the mobility ($ > 6\times10^5$ cm$^2$V$^{-1}$s$^{-1}$ at $\sim10^{11}$ cm$^{-2}$) is limited by the devices' physical edges, and charge fluctuations $ < 7\times10^9$ cm$^{-2}$ are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization ($B\sim50$ mT) and signatures of electronic correlation, including the fractional quantum Hall effect. △ Less

Submitted 21 August, 2020; v1 submitted 5 May, 2020; originally announced May 2020.

Comments: This is the unedited authors' version of the submitted article; 24 pages, 4 figures and supplementary information

Journal ref: 2D Mater. 7, 041003 (2020)

Two repelling random walks on $\mathbb Z$

Authors: Fernando P. A. Prado, Cristian F. Coletti, Rafael A. Rosales

Abstract: We consider two interacting random walks on $\mathbb{Z}$ such that the transition probability of one walk in one direction decreases exponentially with the number of transitions of the other walk in that direction. The joint process may thus be seen as two random walks reinforced to repel each other. The strength of the repulsion is further modulated in our model by a parameter $β\geq 0$. When… ▽ More We consider two interacting random walks on $\mathbb{Z}$ such that the transition probability of one walk in one direction decreases exponentially with the number of transitions of the other walk in that direction. The joint process may thus be seen as two random walks reinforced to repel each other. The strength of the repulsion is further modulated in our model by a parameter $β\geq 0$. When $β= 0$ both processes are independent symmetric random walks on $\mathbb{Z}$, and hence recurrent. We show that both random walks are further recurrent if $β\in (0,1]$. We also show that these processes are transient and diverge in opposite directions if $β> 2$. The case $β\in (1,2]$ remains widely open. Our results are obtained by considering the dynamical system approach to stochastic approximations. △ Less

Submitted 22 March, 2021; v1 submitted 1 May, 2020; originally announced May 2020.

Comments: 17 pages. Added references and corrected typos. Revised the argument for the convergence to equilibria of the vector field. Improved the proof for the recurrence when beta belongs to (0,1); leading to the removal of a previous conjecture

MSC Class: 60K35 (Primary) 37C10 (Secondary)

Journal ref: Stochastic Process. Appl., 160, 2023, 72-88

High-speed double layer graphene electro-absorption modulator on SOI waveguide

Authors: Marco A. Giambra, Vito Sorianello, Vaidotas Miseikis, Simone Marconi, Alberto Montanaro, Paola Galli, Sergio Pezzini, Camilla Coletti, Marco Romagnoli

Abstract: We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-qualit… ▽ More We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics. △ Less

Submitted 28 February, 2020; originally announced March 2020.

Graphene promotes axon elongation through local stall of Nerve Growth Factor signaling endosomes

Authors: D. Convertino, F. FabbrI, N. Mishra, M. Mainardi, V. Cappello, G. Testa, S. Capsoni, L. Albertazzi, S. Luin, L. Marchetti, C. Coletti

Abstract: Several works reported increased differentiation of neuronal cells grown on graphene; however, the molecular mechanism driving axon elongation on this material has remained elusive. Here, we study the axonal transport of nerve growth factor (NGF), the neurotrophin supporting development of peripheral neurons, as a key player in the time course of axonal elongation of dorsal root ganglion neurons o… ▽ More Several works reported increased differentiation of neuronal cells grown on graphene; however, the molecular mechanism driving axon elongation on this material has remained elusive. Here, we study the axonal transport of nerve growth factor (NGF), the neurotrophin supporting development of peripheral neurons, as a key player in the time course of axonal elongation of dorsal root ganglion neurons on graphene. We find that graphene drastically reduces the number of retrogradely transported NGF vesicles in favor of a stalled population in the first two days of culture, in which the boost of axon elongation is observed. This correlates with a mutual charge redistribution, observed via Raman spectroscopy and electrophysiological recordings. Furthermore, ultrastructural analysis indicates a reduced microtubule distance and an elongated axonal topology. Thus, both electrophysiological and structural effects can account for graphene action on neuron development. Unraveling the molecular players underneath this interplay may open new avenues for axon regeneration applications. △ Less

Submitted 19 March, 2020; originally announced March 2020.

30$^\circ$-twisted bilayer graphene quasicrystals from chemical vapor deposition

Authors: Sergio Pezzini, Vaidotas Miseikis, Giulia Piccinini, Stiven Forti, Simona Pace, Rebecca Engelke, Francesco Rossella, Kenji Watanabe, Takashi Taniguchi, Philip Kim, Camilla Coletti

Abstract: The artificial stacking of atomically thin crystals suffers from intrinsic limitations in terms of control and reproducibility of the relative orientation of exfoliated flakes. This drawback is particularly severe when the properties of the system critically depend on the twist angle, as in the case of the dodecagonal quasicrystal formed by two graphene layers rotated by 30$^\circ$. Here we show t… ▽ More The artificial stacking of atomically thin crystals suffers from intrinsic limitations in terms of control and reproducibility of the relative orientation of exfoliated flakes. This drawback is particularly severe when the properties of the system critically depend on the twist angle, as in the case of the dodecagonal quasicrystal formed by two graphene layers rotated by 30$^\circ$. Here we show that large-area 30$^\circ$-rotated bilayer graphene can be grown deterministically by chemical vapor deposition on Cu, eliminating the need of artificial assembly. The quasicrystals are easily transferred to arbitrary substrates and integrated in high-quality hBN-encapsulated heterostructures, which we process into dual-gated devices exhibiting carrier mobility up to $10^5$ cm$^2$/Vs. From low-temperature magnetotransport, we find that the graphene quasicrystals effectively behave as uncoupled graphene layers, showing 8-fold degenerate quantum Hall states: this result indicates that the Dirac cones replica detected by previous photo-emission experiments do not contribute to the electrical transport. △ Less

Submitted 24 April, 2020; v1 submitted 28 January, 2020; originally announced January 2020.

Comments: This is the unedited authors' version of the submitted article, published in its final form on Nano Letters 2020 https://doi.org/10.1021/acs.nanolett.0c00172 , 21 pages, 3 figures and supporting information

Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene

Authors: Stiven Forti, Stefan Link, Alexander Stöhr, Yuran Niu, Alexei A. Zakharov, Camilla Coletti, Ulrich Starke

Abstract: The synthesis of transition metals in a two-dimensional (2D) fashion has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer,… ▽ More The synthesis of transition metals in a two-dimensional (2D) fashion has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer, stabilized in between silicon carbide and monolayer (ML) graphene. We show that the 2D-Au ML is a semiconductor with the valence band maximum 50 meV below the Fermi level. The graphene and gold layers are largely non-interacting, thereby defining a novel class of van der Waals heterostructure. The 2D-Au bands, exhibit a 225 meV spin-orbit splitting along the {ΓK} direction, making it appealing for spin-related applications. By tuning the amount of gold at the SiC/graphene interface, we induce a semiconductor to metal transition in the 2D-Au, which was never observed before and hosts great interest for fundamental physics. △ Less

Submitted 4 December, 2019; originally announced December 2019.

Journal ref: Nat Commun 11, 2236 (2020)

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Authors: Silvia Conti, Lorenzo Pimpolari, Gabriele Calabrese, Robyn Worsley, Subimal Majee, Dmitry K. Polyushkin, Matthias Paur, Simona Pace, Dong Hoon Keum, Filippo Fabbri, Giuseppe Iannaccone, Massimo Macucci, Camilla Coletti, Thomas Mueller, Cinzia Casiraghi, Gianluca Fiori

Abstract: Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, c… ▽ More Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing.The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 x 10^3 (up to 5 x 10^4) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper. △ Less

Submitted 14 October, 2020; v1 submitted 14 November, 2019; originally announced November 2019.

Deterministic direct growth of WS2 on CVD graphene arrays

Authors: Giulia Piccinini, Stiven Forti, Leonardo Martini, Sergio Pezzini, Vaidotas Miseikis, Ulrich Starke, Filippo Fabbri, Camilla Coletti

Abstract: The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of graphene/WS2 heterostructures on technologically attractive substrates like SiO2 would greatly facilitate the implementation of novel two-dimensional (2D) devices. In th… ▽ More The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of graphene/WS2 heterostructures on technologically attractive substrates like SiO2 would greatly facilitate the implementation of novel two-dimensional (2D) devices. In this work, we report the direct growth of monolayer WS2 via chemical vapor deposition (CVD) on single-crystal graphene arrays on SiO2. Remarkably, spectroscopic and microscopic characterization reveals that WS2 grows only on top of the graphene crystals so that the vertical heterostack is selectively obtained in a bottom-up fashion. Spectroscopic characterization indicates that, after WS2 synthesis, graphene undergoes compressive strain and hole doping. Tailored experiments show that such hole doping is caused by the modification of the SiO2 stoichiometry at the graphene/SiO2 interface during the WS2 growth. Electrical transport measurements reveal that the heterostructure behaves like an electron-blocking layer at large positive gate voltage, which makes it a suitable candidate for the development of unipolar optoelectronic components. △ Less

Submitted 5 November, 2019; v1 submitted 4 November, 2019; originally announced November 2019.

Comments: 30 pages, main text and supplementary information

Journal ref: 2D Mater. 7 014002 (2020)

CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes

Authors: Andrea Capasso, Sebastiano Bellani, Alessandro Lorenzo Palma, Leyla Najafi1, Antonio Esaù Del Rio Castillo, Nicola Curreli1, Lucio Cinà, Vaidotas Miseikis, Camilla Coletti, Giuseppe Calogero, Vittorio Pellegrini, Aldo Di Carlo, Francesco Bonaccorso

Abstract: The use of graphene-based electrodes is burgeoning in a wide range of applications, including solar cells, light emitting diodes, touch screens, field-effect transistors, photodetectors, sensors and energy storage systems. The success of such electrodes strongly depends on the implementation of effective production and processing methods for graphene. In this work, we take advantage of two differe… ▽ More The use of graphene-based electrodes is burgeoning in a wide range of applications, including solar cells, light emitting diodes, touch screens, field-effect transistors, photodetectors, sensors and energy storage systems. The success of such electrodes strongly depends on the implementation of effective production and processing methods for graphene. In this work, we take advantage of two different graphene production methods to design an advanced, conductive oxide- and platinum-free, graphene-based counter electrode for dye-sensitized solar cells (DSSCs). In particular, we exploit the combination of a graphene film, produced by chemical vapor deposition (CVD) (CVD-graphene), with few-layer graphene (FLG) flakes, produced by liquid phase exfoliation. The CVD-graphene is used as charge collector, while the FLG flakes, deposited atop by spray coating, act as catalyst for the reduction of the electrolyte redox couple (i.e., I3-/I-- and Co+2/+3). The as-produced counter electrodes are tested in both I3-/I-- and Co+2/+3-based semitransparent DSSCs, showing power conversion efficiencies of 2.1% and 5.09%, respectively, under 1 SUN illumination. At 0.1 SUN, Co+2/+3-based DSSCs achieve a power conversion efficiency as high as 6.87%. Our results demonstrate that the electrical, optical, chemical and catalytic properties of graphene-based dual films, designed by combining CVD-graphene and FLG flakes, are effective alternatives to FTO/Pt counter electrodes for DSSCs for both outdoor and indoor applications. △ Less

Submitted 31 October, 2019; originally announced October 2019.

Journal ref: 2D Materials, 2019, 6 035007