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Deep Subwavelength Topological Edge State in a Hyperbolic Medium
Authors:
Lorenzo Orsini,
Hanan Herzig Sheinfux,
Yandong Li,
Seojoo Lee,
Gian Marcello Andolina,
Orazio Scarlatella,
Matteo Ceccanti,
Karuppasamy Soundarapandian,
Eli Janzen,
James H. Edgar,
Gennady Shvets,
Frank H. L. Koppens
Abstract:
Topological nanophotonics presents the potential for cutting-edge photonic systems, with a core aim revolving around the emergence of topological edge states. These states are primed to propagate robustly while embracing deep subwavelength confinement that defies diffraction limits. Such attributes make them particularly appealing for nanoscale applications, where achieving these elusive states ha…
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Topological nanophotonics presents the potential for cutting-edge photonic systems, with a core aim revolving around the emergence of topological edge states. These states are primed to propagate robustly while embracing deep subwavelength confinement that defies diffraction limits. Such attributes make them particularly appealing for nanoscale applications, where achieving these elusive states has remained challenging. We unveil the first experimental proof of deep subwavelength topological edge states by implementing periodic modulation of hyperbolic phonon polaritons within a Van der Waals heterostructure. This finding represents a significant milestone in the field of nanophotonics, and it can be directly extended to and hybridized with other Van der Waals materials in various applications. The extensive scope for material substitution facilitates broadened operational frequency ranges, streamlined integration of diverse polaritonic materials, and compatibility with electronic and excitonic systems.
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Submitted 4 October, 2023;
originally announced October 2023.
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Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Authors:
Karuppasamy Pandian Soundarapandian,
Domenico De Fazio,
Sefaattin Tongay,
Frank H. L. Koppens
Abstract:
High mobility is a crucial requirement for a large variety of electronic device applications. The state-of-the-art for high quality graphene devices is based on heterostructures made with graphene encapsulated in $>80\,$nm-thick flakes of hexagonal boron nitride (hBN). Unfortunately, scaling up multilayer hBN while precisely controlling the number of layers remains an elusive challenge, resulting…
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High mobility is a crucial requirement for a large variety of electronic device applications. The state-of-the-art for high quality graphene devices is based on heterostructures made with graphene encapsulated in $>80\,$nm-thick flakes of hexagonal boron nitride (hBN). Unfortunately, scaling up multilayer hBN while precisely controlling the number of layers remains an elusive challenge, resulting in a rough material unable to enhance the mobility of graphene. This leads to the pursuit of alternative, scalable materials, which can be simultaneously used as substrate and encapsulant for graphene. Tungsten disulfide (WS$_2$) is a transition metal dichalcogenide, which was successfully grown in large ($\sim$mm-size) multi-layers by chemical vapour deposition. However, the resistance \textit{vs} gate voltage characteristics when gating graphene through WS$_2$ exhibit largely hysteretic shifts of the charge neutrality point (CNP) in the order of $Δn\sim$2.6$\cdot$10$^{11}$ cm$^{-2}$, hindering the use of WS$_2$ as a reliable encapsulant. The hysteresis originates due to the charge traps from sulfur vacancies present in WS$_2$. In this work, we report for the first time the use of WS$_2$ as a substrate and the overcoming of hysteresis issues by chemically treating WS$_2$ with a super-acid, which passivates these vacancies and strips the surface from contaminants. The hysteresis is significantly reduced below the noise level by at least a factor five (to $Δn<$5$\cdot$10$^{10}$ cm$^{-2}$) and, simultaneously, the room-temperature mobility of WS$_2$-encapsulated graphene is as high as $\sim$6.2$\cdot$10$^{4}$ cm$^{-2}$V$^{-1}$s$^{-1}$ at a carrier density $n$ $\sim$1$\cdot$ 10$^{12}$ cm$^{-2}$. Our results promote WS$_2$ to a valid alternative to hBN as encapsulant for high-performance graphene devices.
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Submitted 26 July, 2022;
originally announced July 2022.
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Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons
Authors:
Eva A. A. Pogna,
Xiaoyu Jia,
Alessandro Principi,
Alexander Block,
Luca Banszerus,
Jincan Zhang,
Xiaoting Liu,
Thibault Sohier,
Stiven Forti,
Karuppasamy Soundarapandian,
Bernat Terrés,
Jake D. Mehew,
Chiara Trovatello,
Camilla Coletti,
Frank H. L. Koppens,
Mischa Bonn,
Niek van Hulst,
Matthieu J. Verstraete,
Hailin Peng,
Zhongfan Liu,
Christoph Stampfer,
Giulio Cerullo,
Klaas-Jan Tielrooij
Abstract:
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the dif…
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Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.
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Submitted 5 March, 2021;
originally announced March 2021.
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Fast electrical modulation of strong near-field interactions between erbium emitters and graphene
Authors:
Daniel Cano,
Alban Ferrier,
Karuppasamy Soundarapandian,
Antoine Reserbat-Plantey,
Marion Scarafagio,
Alexandre Tallaire,
Antoine Seyeux,
Philippe Marcus,
Hugues de Riedmatten,
Philippe Goldner,
Frank H. L. Koppens,
Klaas-Jan Tielrooij
Abstract:
Combining the quantum optical properties of single-photon emitters with the strong near-field interactions available in nanophotonic and plasmonic systems is a powerful way of creating quantum manipulation and metrological functionalities. The ability to actively and dynamically modulate emitter-environment interactions is of particular interest in this regard. While thermal, mechanical and optica…
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Combining the quantum optical properties of single-photon emitters with the strong near-field interactions available in nanophotonic and plasmonic systems is a powerful way of creating quantum manipulation and metrological functionalities. The ability to actively and dynamically modulate emitter-environment interactions is of particular interest in this regard. While thermal, mechanical and optical modulation have been demonstrated, electrical modulation has remained an outstanding challenge. Here we realize fast, all-electrical modulation of the near-field interactions between a nanolayer of erbium emitters and graphene, by in-situ tuning the Fermi energy of graphene. We demonstrate strong interactions with a >1,000-fold increased decay rate for 25% of the emitters, and electrically modulate these interactions with frequencies up to 300 kHz - orders of magnitude faster than the emitters radiative decay (100 Hz). This constitutes an enabling platform for integrated quantum technologies, opening routes to quantum entanglement generation by collective plasmon emission or photon emission with controlled waveform.
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Submitted 23 July, 2020; v1 submitted 22 July, 2020;
originally announced July 2020.
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Towards Industry 4.0: Gap Analysis between Current Automotive MES and Industry Standards using Model-Based Requirement Engineering
Authors:
Manoj Kannan Soundarapandian,
Kunal Suri,
Juan Cadavid,
Ion Barosan,
Mark Van Den Brand,
Mauricio Alferez,
Sebastien Gerard
Abstract:
The dawn of the fourth industrial revolution, Industry 4.0 has created great enthusiasm among companies and researchers by giving them an opportunity to pave the path towards the vision of a connected smart factory ecosystem. However, in context of automotive industry there is an evident gap between the requirements supported by the current automotive manufacturing execution systems (MES) and the…
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The dawn of the fourth industrial revolution, Industry 4.0 has created great enthusiasm among companies and researchers by giving them an opportunity to pave the path towards the vision of a connected smart factory ecosystem. However, in context of automotive industry there is an evident gap between the requirements supported by the current automotive manufacturing execution systems (MES) and the requirements proposed by industrial standards from the International Society of Automation (ISA) such as, ISA-95, ISA-88 over which the Industry 4.0 is being built on. In this paper, we bridge this gap by following a model-based requirements engineering approach along with a gap analysis process. Our work is mainly divided into three phases, (i) automotive MES tool selection phase, (ii) requirements modeling phase, (iii) and gap analysis phase based on the modeled requirements. During the MES tool selection phase, we used known reliable sources such as, MES product survey reports, white papers that provide in-depth and comprehensive information about various comparison criteria and tool vendors list for the current MES landscape. During the requirement modeling phase, we specified requirements derived from the needs of ISA-95 and ISA-88 industrial standards using the general purpose Systems Modeling Language (SysML). During the gap analysis phase, we find the misalignment between standard requirements and the compliance of the existing software tools to those standards.
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Submitted 10 April, 2017;
originally announced April 2017.
