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Assessing the Impact of Noise on Quantum Neural Networks: An Experimental Analysis
Authors:
Erik B. Terres Escudero,
Danel Arias Alamo,
Oier Mentxaka Gómez,
Pablo García Bringas
Abstract:
In the race towards quantum computing, the potential benefits of quantum neural networks (QNNs) have become increasingly apparent. However, Noisy Intermediate-Scale Quantum (NISQ) processors are prone to errors, which poses a significant challenge for the execution of complex algorithms or quantum machine learning. To ensure the quality and security of QNNs, it is crucial to explore the impact of…
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In the race towards quantum computing, the potential benefits of quantum neural networks (QNNs) have become increasingly apparent. However, Noisy Intermediate-Scale Quantum (NISQ) processors are prone to errors, which poses a significant challenge for the execution of complex algorithms or quantum machine learning. To ensure the quality and security of QNNs, it is crucial to explore the impact of noise on their performance. This paper provides a comprehensive analysis of the impact of noise on QNNs, examining the Mottonen state preparation algorithm under various noise models and studying the degradation of quantum states as they pass through multiple layers of QNNs. Additionally, the paper evaluates the effect of noise on the performance of pre-trained QNNs and highlights the challenges posed by noise models in quantum computing. The findings of this study have significant implications for the development of quantum software, emphasizing the importance of prioritizing stability and noise-correction measures when developing QNNs to ensure reliable and trustworthy results. This paper contributes to the growing body of literature on quantum computing and quantum machine learning, providing new insights into the impact of noise on QNNs and paving the way towards the development of more robust and efficient quantum algorithms.
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Submitted 23 November, 2023;
originally announced November 2023.
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Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons
Authors:
Eva A. A. Pogna,
Xiaoyu Jia,
Alessandro Principi,
Alexander Block,
Luca Banszerus,
Jincan Zhang,
Xiaoting Liu,
Thibault Sohier,
Stiven Forti,
Karuppasamy Soundarapandian,
Bernat Terrés,
Jake D. Mehew,
Chiara Trovatello,
Camilla Coletti,
Frank H. L. Koppens,
Mischa Bonn,
Niek van Hulst,
Matthieu J. Verstraete,
Hailin Peng,
Zhongfan Liu,
Christoph Stampfer,
Giulio Cerullo,
Klaas-Jan Tielrooij
Abstract:
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the dif…
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Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.
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Submitted 5 March, 2021;
originally announced March 2021.
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Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides
Authors:
Vaidotas Mišeikis,
Simone Marconi,
Marco A. Giambra,
Alberto Montanaro,
Leonardo Martini,
Filippo Fabbri,
Sergio Pezzini,
Giulia Piccinini,
Stiven Forti,
Bernat Terrés,
Ilya Goykhman,
Louiza Hamidouche,
Pierre Legagneux,
Vito Sorianello,
Andrea C. Ferrari,
Frank H. L. Koppens,
Marco Romagnoli,
Camilla Coletti
Abstract:
We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and…
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We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity 8 x 10$^{10}$ $cm^{-2}$ at the charge neutrality point, and a large Seebeck coefficient 140 $μ$V K$^{-1}$, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.
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Submitted 11 September, 2020;
originally announced September 2020.
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Near-unity light absorption in a monolayer WS2 van der Waals heterostructure cavity
Authors:
Itai Epstein,
Bernat Terrés,
André J. Chaves,
Varun-Varma Pusapati,
Daniel A. Rhodes,
Bettina Frank,
Valentin Zimmermann,
Ying Qin,
Kenji Watanabe,
Takashi Taniguchi,
Harald Giessen,
Sefaattin Tongay,
James C. Hone,
Nuno M. R. Peres,
Frank Koppens
Abstract:
Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton interactions in TMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has no…
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Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton interactions in TMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has not been provided. Here, we introduce a TMD-based van der Waals heterostructure cavity that provides near-unity excitonic absorption, and emission of excitonic complexes that are observed at ultra-low excitation powers. Our results are in full agreement with a quantum theoretical framework introduced to describe the light-exciton-cavity interaction. We find that the subtle interplay between the radiative, non-radiative and dephasing decay rates plays a crucial role, and unveil a universal absorption law for excitons in 2D systems. This enhanced light-exciton interaction provides a platform for studying excitonic phase-transitions and quantum nonlinearities and enables new possibilities for 2D semiconductor-based optoelectronic devices.
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Submitted 9 September, 2019; v1 submitted 20 August, 2019;
originally announced August 2019.
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Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction
Authors:
Sebastián Castilla,
Bernat Terrés,
Marta Autore,
Leonardo Viti,
Jian Li,
Alexey Y. Nikitin,
Ioannis Vangelidis,
Kenji Watanabe,
Takashi Taniguchi,
Elefterios Lidorikis,
Miriam S. Vitiello,
Rainer Hillenbrand,
Klaas-Jan Tielrooij,
Frank H. L. Koppens
Abstract:
Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that…
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Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that exploits the photothermoelectric (PTE) effect, based on a design that employs a dual-gated, dipolar antenna with a gap of 100 nm. This narrow-gap antenna simultaneously creates a pn junction in a graphene channel located above the antenna and strongly concentrates the incoming radiation at this pn junction, where the photoresponse is created. We demonstrate that this novel detector has an excellent sensitivity, with a noise-equivalent power of 80 pW-per-square-root-Hz at room temperature, a response time below 30 ns (setup-limited), a high dynamic range (linear power dependence over more than 3 orders of magnitude) and broadband operation (measured range 1.8-4.2 THz, antenna-limited), which fulfills a combination that is currently missing in the state-of-the-art detectors. Importantly, on the basis of the agreement we obtained between experiment, analytical model, and numerical simulations, we have reached a solid understanding of how the PTE effect gives rise to a THz-induced photoresponse, which is very valuable for further detector optimization.
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Submitted 6 May, 2019;
originally announced May 2019.
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Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
Authors:
S. Engels,
B. Terrés,
F. Klein,
S. Reichardt,
M. Goldsche,
S. Kuhlen,
K. Watanabe,
T. Taniguchi,
C. Stampfer
Abstract:
We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing…
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We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D-peak and the G-peak positions.
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Submitted 4 May, 2018;
originally announced May 2018.
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From diffusive to ballistic transport in etched graphene constrictions and nanoribbons
Authors:
Sowmya Somanchi,
Bernat Terrés,
Julian Peiro,
Maximilian Staggenborg,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Christoph Stampfer
Abstract:
Graphene nanoribbons and constrictions are envisaged as fundamental components of future carbon-based nanoelectronic and spintronic devices. At nanoscale, electronic effects in these devices depend heavily on the dimensions of the active channel and the nature of edges. Hence, controlling both these parameters is crucial to understand the physics in such systems. This review is about the recent pr…
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Graphene nanoribbons and constrictions are envisaged as fundamental components of future carbon-based nanoelectronic and spintronic devices. At nanoscale, electronic effects in these devices depend heavily on the dimensions of the active channel and the nature of edges. Hence, controlling both these parameters is crucial to understand the physics in such systems. This review is about the recent progress in the fabrication of graphene nanoribbons and constrictions in terms of low temperature quantum transport. In particular, recent advancements using encapsulated graphene allowing for quantized conductance and future experiments towards exploring spin effects in these devices are presented. The influence of charge carrier inhomogeneity and the important length scales which play a crucial role for transport in high quality samples are also discussed.
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Submitted 29 June, 2017;
originally announced June 2017.
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Size quantization of Dirac fermions in graphene constrictions
Authors:
B. Terrés,
L. A. Chizhova,
F. Libisch,
J. Peiro,
D. Jörger,
S. Engels,
A. Girschik,
K. Watanabe,
T. Taniguchi,
S. V. Rotkin,
J. Burgdörfer,
C. Stampfer
Abstract:
Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantiz…
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Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantized conductance of size-confined Dirac fermions in lithographically-defined graphene constrictions. At high charge carrier densities, the observed conductance agrees excellently with the Landauer theory of ballistic transport without any adjustable parameter. Experimental data and simulations for the evolution of the conductance with magnetic field unambiguously confirm the identification of size quantization in the constriction. Close to the charge neutrality point, bias voltage spectroscopy reveals a renormalized Fermi velocity ($v_F \approx 1.5 \times 10^6 m/s$) in our graphene constrictions. Moreover, at low carrier density transport measurements allow probing the density of localized states at edges, thus offering a unique handle on edge physics in graphene devices.
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Submitted 7 April, 2016; v1 submitted 2 March, 2016;
originally announced March 2016.
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Spatial control of laser-induced doping profiles in graphene on hexagonal boron nitride
Authors:
Christoph Neumann,
Leo Rizzi,
Sven Reichardt,
Bernat Terrés,
Timofiy Khodkov,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Christoph Stampfer
Abstract:
We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride (hBN) heterostructures. The technique is based on photo-induced doping by a focused laser and does neither require masks nor photo resists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritabl…
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We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride (hBN) heterostructures. The technique is based on photo-induced doping by a focused laser and does neither require masks nor photo resists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is only limited by the laser spot size (~600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.
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Submitted 2 November, 2015;
originally announced November 2015.
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Low B Field Magneto-Phonon Resonances in Single-Layer and Bilayer Graphene
Authors:
Christoph Neumann,
Sven Reichardt,
Marc Drögeler,
Bernat Terrés,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Slava V. Rotkin,
Christoph Stampfer
Abstract:
Many-body effects resulting from strong electron-electron and electron-phonon interactions play a significant role in graphene physics. We report on their manifestation in low B field magneto-phonon resonances in high quality exfoliated single-layer and bilayer graphene encapsulated in hexagonal boron nitride. These resonances allow us to extract characteristic effective Fermi velocities, as high…
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Many-body effects resulting from strong electron-electron and electron-phonon interactions play a significant role in graphene physics. We report on their manifestation in low B field magneto-phonon resonances in high quality exfoliated single-layer and bilayer graphene encapsulated in hexagonal boron nitride. These resonances allow us to extract characteristic effective Fermi velocities, as high as $1.20 \times 10^6$ m/s, for the observed "dressed" Landau level transitions, as well as the broadening of the resonances, which increases with Landau level index.
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Submitted 16 April, 2015; v1 submitted 14 April, 2015;
originally announced April 2015.
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Raman spectroscopy on mechanically exfoliated pristine graphene ribbons
Authors:
B. Terrés,
S. Reichardt,
C. Neumann,
K. Watanabe,
T. Taniguchi,
C. Stampfer
Abstract:
We present Raman spectroscopy measurements of non-etched graphene nanoribbons, with widths ranging from 15 to 160 nm, where the D-line intensity is strongly dependent on the polarization direction of the incident light. The extracted edge disorder correlation length is approximately one order of magnitude larger than on previously reported graphene ribbons fabricated by reactive ion etching techni…
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We present Raman spectroscopy measurements of non-etched graphene nanoribbons, with widths ranging from 15 to 160 nm, where the D-line intensity is strongly dependent on the polarization direction of the incident light. The extracted edge disorder correlation length is approximately one order of magnitude larger than on previously reported graphene ribbons fabricated by reactive ion etching techniques. This suggests a more regular crystallographic orientation of the non-etched graphene ribbons here presented. We further report on the ribbons width dependence of the line-width and frequency of the long-wavelength optical phonon mode (G-line) and the 2D-line of the studied graphene ribbons.
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Submitted 10 November, 2014;
originally announced November 2014.
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Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
Authors:
Marc Drögeler,
Frank Volmer,
Maik Wolter,
Bernat Terrés,
Kenji Watanabe,
Takashi Taniguchi,
Gernot Güntherodt,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that roo…
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We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$μ$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.
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Submitted 10 June, 2014;
originally announced June 2014.
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Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene
Authors:
S. Engels,
B. Terrés,
A. Epping,
T. Khodkov,
K. Watanabe,
T. Taniguchi,
B. Beschoten,
C. Stampfer
Abstract:
We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $τ_φ$ as well as the inter- and intra-valley scattering times $τ_i$ and…
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We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $τ_φ$ as well as the inter- and intra-valley scattering times $τ_i$ and $τ_*$. While $τ_φ$ is in qualitative agreement with an electron-electron interaction mediated dephasing mechanism, electron spin-flip scattering processes are limiting $τ_φ$ at low temperatures. The analysis of $τ_i$ and $τ_*$ points to local strain fluctuation as the most probable mechanism for limiting the mobility in high-quality bilayer graphene.
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Submitted 30 September, 2014; v1 submitted 6 March, 2014;
originally announced March 2014.
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Negative quantum capacitance in graphene nanoribbons with lateral gates
Authors:
R. Reiter,
U. Derra,
S. Birner,
B. Terrés,
F. Libisch,
J. Burgdörfer,
C. Stampfer
Abstract:
We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate structures on the overall back gate capacitive coupling. Most interestingly, we find a complex interplay between quantum capacitance effects in the graphene nanoribbon and the l…
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We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate structures on the overall back gate capacitive coupling. Most interestingly, we find a complex interplay between quantum capacitance effects in the graphene nanoribbon and the lateral graphene side gates, giving rise to an unconventional negative quantum capacitance. The emerging non-linear capacitive couplings are investigated in detail. The experimentally relevant relative lever arm, the ratio between the coupling of the different gate structures, is discussed.
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Submitted 23 January, 2014; v1 submitted 19 December, 2013;
originally announced December 2013.
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Reducing disorder in graphene nanoribbons by chemical edge modification
Authors:
Jan Dauber,
Bernat Terrés,
Christian Volk,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measur…
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We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.
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Submitted 21 November, 2013; v1 submitted 20 November, 2013;
originally announced November 2013.
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Transport in coupled graphene-nanotube quantum devices
Authors:
S. Engels,
P. Weber,
B. Terrés,
J. Dauber,
C. Meyer,
C. Volk,
S. Trellenkamp,
U. Wichmann,
C. Stampfer
Abstract:
We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantum dot devices with graphene charge detectors and nanotube quantum dots with graphene leads. The devices are fabricated by chemical vapor deposition growth of carbon nanotubes and subsequent structuring of mechanically ex…
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We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantum dot devices with graphene charge detectors and nanotube quantum dots with graphene leads. The devices are fabricated by chemical vapor deposition growth of carbon nanotubes and subsequent structuring of mechanically exfoliated graphene. We study the detection of individual charging events in the carbon nanotube quantum dot by a nearby graphene nanoribbon and show that they lead to changes of up to 20% of the conductance maxima in the graphene nanoribbon acting as a good performing charge detector. Moreover, we discuss an electrically coupled graphene-nanotube junction, which exhibits a tunneling barrier with tunneling rates in the low GHz regime. This allows to observe Coulomb blockade on a carbon nanotube quantum dot with graphene source and drain leads.
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Submitted 9 August, 2013; v1 submitted 6 April, 2012;
originally announced April 2012.
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Charge detection in a bilayer graphene quantum dot
Authors:
Stefan Fringes,
Christian Volk,
Caroline Norda,
Bernat Terrés,
Jan Dauber,
Stephan Engels,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon located approximately 35 nm next to a bilayer graphene quantum dot with an island diameter of about 100 nm. Local resonances in the nanoribbon can be successfully used to detect individual charging events in the dot eve…
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We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon located approximately 35 nm next to a bilayer graphene quantum dot with an island diameter of about 100 nm. Local resonances in the nanoribbon can be successfully used to detect individual charging events in the dot even in regimes where the quantum dot Coulomb peaks cannot be measured by conventional techniques.
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Submitted 26 October, 2011;
originally announced October 2011.
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Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot
Authors:
Stefan Fringes,
Christian Volk,
Bernat Terrés,
Jan Dauber,
Stephan Engels,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a wide energy range. Charge stability diagrams and in particular individual triple point pairs allow to study the tunable capacitive inter-dot coupling energy as we…
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We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a wide energy range. Charge stability diagrams and in particular individual triple point pairs allow to study the tunable capacitive inter-dot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points. We extract a mutual capacitive inter-dot coupling in the range of 2 - 6 meV and an inter-dot tunnel coupling on the order of 1.5 μeV.
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Submitted 26 October, 2011;
originally announced October 2011.
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Electronic Excited States in Bilayer Graphene Double Quantum Dots
Authors:
Christian Volk,
Stefan Fringes,
Bernat Terrés,
Jan Dauber,
Stephan Engels,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable int…
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We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable interdot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points over a large energy range. The obtained constant level spacing of 1.75 meV over a wide energy range is in good agreement with the expected single-particle energy spacing in bilayer graphene quantum dots. Finally, we investigate the evolution of the electronic excited states in a parallel magnetic field.
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Submitted 18 March, 2013; v1 submitted 10 May, 2011;
originally announced May 2011.
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Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios
Authors:
B. Terrés,
J. Dauber,
C. Volk,
S. Trellenkamp,
U. Wichmann,
C. Stampfer
Abstract:
We present electron transport measurements on lithographically defined and etched graphene nanoconstrictions with different aspect ratios including different lengths (L) and widths (W). A roughly length-independent disorder induced effective energy gap can be observed around the charge neutrality point. This energy gap scales inversely with the width even in regimes where the length of the constri…
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We present electron transport measurements on lithographically defined and etched graphene nanoconstrictions with different aspect ratios including different lengths (L) and widths (W). A roughly length-independent disorder induced effective energy gap can be observed around the charge neutrality point. This energy gap scales inversely with the width even in regimes where the length of the constriction is smaller than its width (L<W). In very short constrictions, we observe both resonances due to localized states or charged islands and an elevated overall conductance level (0.1-1e2/h), which is strongly length-dependent in the gap region. This makes very short graphene constrictions interesting for highly transparent graphene tunneling barriers.
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Submitted 15 February, 2011; v1 submitted 9 November, 2010;
originally announced November 2010.
