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Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
Authors:
E. Icking,
L. Banszerus,
F. Wörtche,
F. Volmer,
P. Schmidt,
C. Steiner,
S. Engels,
J. Hesselmann,
M. Goldsche,
K. Watanabe,
T. Taniguchi,
C. Volk,
B. Beschoten,
C. Stampfer
Abstract:
The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material that allows tuning the band gap by an out-of-plane electric field. Although the first…
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The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material that allows tuning the band gap by an out-of-plane electric field. Although the first evidence of the tunable gap was already found ten years ago, it took until recent to fabricate sufficiently clean heterostructures where the electrically induced gap could be used to fully suppress transport or confine charge carriers. Here, we present a detailed study of the tunable band gap in gated bilayer graphene characterized by temperature-activated transport and finite-bias spectroscopy measurements. The latter method allows comparing different gate materials and device technologies, which directly affects the disorder potential in bilayer graphene. We show that graphite-gated bilayer graphene exhibits extremely low disorder and as good as no subgap states resulting in ultraclean tunable band gaps up to 120 meV. The size of the band gaps are in good agreement with theory and allow complete current suppression making a wide range of semiconductor applications possible.
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Submitted 7 July, 2022; v1 submitted 4 June, 2022;
originally announced June 2022.
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Engineering tunable strain fields in suspended graphene by microelectromechanical systems
Authors:
Jens Sonntag,
Matthias Goldsche,
Tymofiy Khodkov,
Gerard Verbiest,
Sven Reichardt,
Nils von den Driesch,
Dan Buca,
Christoph Stampfer
Abstract:
Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-MEMS technology; (2) full control over induced strain fields and doping levels within the graphene membrane and their characterization via spatially r…
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Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-MEMS technology; (2) full control over induced strain fields and doping levels within the graphene membrane and their characterization via spatially resolved confocal Raman spectroscopy; and (3) the ability to detect the mechanical coupling of the graphene sheet to the MEMS device with via their mechanical resonator eigenfrequencies.
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Submitted 25 March, 2021;
originally announced March 2021.
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Tunable coupling of two mechanical resonators by a graphene membrane
Authors:
G. J. Verbiest,
M. Goldsche,
J. Sonntag,
T. Khodkov,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
Coupled nanomechanical resonators are interesting for both fundamental studies and practical applications as they offer rich and tunable oscillation dynamics. At present, the mechanical coupling in such systems is often mediated by a fixed geometry, such as a joint clamping point of the resonators or a displacement-dependent force. Here we show a graphene-integrated electromechanical system consis…
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Coupled nanomechanical resonators are interesting for both fundamental studies and practical applications as they offer rich and tunable oscillation dynamics. At present, the mechanical coupling in such systems is often mediated by a fixed geometry, such as a joint clamping point of the resonators or a displacement-dependent force. Here we show a graphene-integrated electromechanical system consisting of two physically separated mechanical resonators -- a comb-drive actuator and a suspended silicon beam -- that are tunably coupled by a graphene membrane. The graphene membrane, moreover, provides a sensitive electrical read-out for the two resonating systems silicon structures showing 16 different modes in the frequency range from 0.4~to 24~MHz. In addition, by pulling on the graphene membrane with an electrostatic potential applied to one of the silicon resonators, we control the mechanical coupling, quantified by the $g$-factor, from 20 kHz to 100 kHz. Our results pave the way for coupled nanoelectromechanical systems requiring controllable mechanically coupled resonators.
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Submitted 6 November, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields
Authors:
G. J. Verbiest,
H. Janssen,
D. Xu,
X. Ge,
M. Goldsche,
J. Sonntag,
T. Khodkov,
L. Banszerus,
N. von den Driesch,
D. Buca,
K. Watanabe,
T. Taniguchi,
C. Stampfer
Abstract:
We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of t…
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We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance. Through a detailed noise characterization, we find that the best resolution is obtained when operating the HEMT amplifier at the highest gain. We obtained a resolution in the absolute capacitance of 6.4~aF$/\sqrt{\textrm{Hz}}$ at 77 K on a comb-drive actuator, while maintaining a small excitation amplitude of 15~$k_\text{B} T/e$. We show the magnetic field functionality of our impedance bridge by measuring the quantum Hall plateaus of a top-gated hBN/graphene/hBN heterostructure at 60~mK with a probe signal of 12.8~$k_\text{B} T/e$.
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Submitted 27 June, 2019; v1 submitted 17 January, 2019;
originally announced January 2019.
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Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
Authors:
S. Engels,
B. Terrés,
F. Klein,
S. Reichardt,
M. Goldsche,
S. Kuhlen,
K. Watanabe,
T. Taniguchi,
C. Stampfer
Abstract:
We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing…
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We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D-peak and the G-peak positions.
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Submitted 4 May, 2018;
originally announced May 2018.
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Fabrication of comb-drive actuators for straining nanostructured suspended graphene
Authors:
M. Goldsche,
G. J. Verbiest,
T. Khodkov,
J. Sonntag,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from $\approx51.6$ k$\mathrmΩ$ to $\approx236$ $\mathrmΩ$ at room te…
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We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from $\approx51.6$ k$\mathrmΩ$ to $\approx236$ $\mathrmΩ$ at room temperature in order to allow for strain-dependent transport measurements. The graphene is integrated by mechanically transferring it directly onto the actuator using a polymethylmethacrylate membrane. Importantly, the integrated graphene can be nanostructured afterwards to optimize device functionality. The minimum feature size of the structured suspended graphene is 30 nm, which allows for interesting device concepts such as mechanically-tunable nanoconstrictions. Finally, we characterize the fabricated devices by measuring the Raman spectrum as well as the a mechanical resonance frequency of an integrated graphene sheet for different strain values.
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Submitted 7 June, 2018; v1 submitted 11 April, 2018;
originally announced April 2018.
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Detecting Ultrasound Vibrations by Graphene Resonators
Authors:
G. J. Verbiest,
J. N. Kirchhof,
J. Sonntag,
M. Goldsche,
T. Khodkov,
C. Stampfer
Abstract:
Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we…
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Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we show a graphene resonator that detects ultrasound vibrations propagating through the substrate on which it was fabricated. We achieve ultimately a resolution of $\approx7$~pm/$\mathrm{\sqrt Hz}$ in ultrasound amplitude at frequencies up to 100~MHz. Thanks to an extremely high nonlinearity in the mechanical restoring force, the resonance frequency itself can also be used for ultrasound detection. We observe a shift of 120~kHz at a resonance frequency of 65~MHz for an induced vibration amplitude of 100~pm with a resolution of 25~pm. Remarkably, the nonlinearity also explains the generally observed asymmetry in the resonance frequency tuning of the resonator when pulled upon with an electrostatic gate. This work puts forward a sensor design that fits onto an atomic force microscope cantilever and therefore promises direct ultrasound detection at the nanoscale for nondestructive subsurface characterization.
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Submitted 22 June, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Tailoring mechanically-tunable strain fields in graphene
Authors:
M. Goldsche,
J. Sonntag,
T. Khodkov,
G. Verbiest,
S. Reichardt,
C. Neumann,
T. Ouaj,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substr…
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There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$μ$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.
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Submitted 13 November, 2017;
originally announced November 2017.
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Tunable mechanical coupling between driven microelectromechanical resonators
Authors:
G. J. Verbiest,
D. Xu,
M. Goldsche,
T. Khodkov,
S. Barzanjeh,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
We present a microelectromechanical system, in which a silicon beam is attached to a comb-drive actuator, that is used to tune the tension in the silicon beam, and thus its resonance frequency. By measuring the resonance frequencies of the system, we show that the comb-drive actuator and the silicon beam behave as two strongly coupled resonators. Interestingly, the effective coupling rate (~ 1.5 M…
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We present a microelectromechanical system, in which a silicon beam is attached to a comb-drive actuator, that is used to tune the tension in the silicon beam, and thus its resonance frequency. By measuring the resonance frequencies of the system, we show that the comb-drive actuator and the silicon beam behave as two strongly coupled resonators. Interestingly, the effective coupling rate (~ 1.5 MHz) is tunable with the comb-drive actuator (+10%) as well as with a side-gate (-10%) placed close to the silicon beam. In contrast, the effective spring constant of the system is insensitive to either of them and changes only by $\pm$ 0.5%. Finally, we show that the comb-drive actuator can be used to switch between different coupling rates with a frequency of at least 10 kHz.
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Submitted 15 July, 2016;
originally announced July 2016.
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Ballistic transport exceeding 28 μm in CVD grown graphene
Authors:
Luca Banszerus,
Michael Schmitz,
Stephan Engels,
Matthias Goldsche,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Christoph Stampfer
Abstract:
We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross…
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We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.
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Submitted 12 January, 2016; v1 submitted 27 November, 2015;
originally announced November 2015.
