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Charge carrier density-dependent Raman spectra of graphene encapsulated in hexagonal boron nitride
Authors:
Jens Sonntag,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Christoph Stampfer
Abstract:
We present low-temperature Raman measurements on gate tunable graphene encapsulated in hexagonal boron nitride, which allows to study in detail the Raman G and 2D mode frequencies and line widths as function of the charge carrier density. We observe a clear softening of the Raman G mode (of up to 2.5 cm$^{-1}$) at low carrier density due to the phonon anomaly and a residual G~mode line width of…
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We present low-temperature Raman measurements on gate tunable graphene encapsulated in hexagonal boron nitride, which allows to study in detail the Raman G and 2D mode frequencies and line widths as function of the charge carrier density. We observe a clear softening of the Raman G mode (of up to 2.5 cm$^{-1}$) at low carrier density due to the phonon anomaly and a residual G~mode line width of $\approx$ 3.5 cm$^{-1}$ at high doping. From analyzing the G mode dependence on doping and laser power we extract an electron-phonon-coupling constant of $\approx$ 4.4 $\times$ 10$^{-3}$ (for the G mode phonon). The ultra-flat nature of encapsulated graphene results in a minimum Raman 2D peak line width of 14.5 cm$^{-1}$ and allows to observe the intrinsic electron-electron scattering induced broadening of the 2D peak of up to 18 cm$^{-1}$ for an electron density of 5$\times$10$^{12}$ cm$^{-2}$ (laser excitation energy of 2.33 eV). Our findings not only provide insights into electron-phonon coupling and the role of electron-electron scattering for the broadening of the 2D peak, but also crucially shows the limitations when it comes to the use of Raman spectroscopy (i.e. the use of the frequencies and the line widths of the G and 2D modes) to benchmark graphene in terms of charge carrier density, strain and strain inhomogenities. This is particularly relevant when utilizing spatially-resolved 2D Raman line width maps to assess substrate-induced nanometer-scale strain variations.
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Submitted 25 January, 2023;
originally announced January 2023.
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Positive-Unlabeled Domain Adaptation
Authors:
Jonas Sonntag,
Gunnar Behrens,
Lars Schmidt-Thieme
Abstract:
Domain Adaptation methodologies have shown to effectively generalize from a labeled source domain to a label scarce target domain. Previous research has either focused on unlabeled domain adaptation without any target supervision or semi-supervised domain adaptation with few labeled target examples per class. On the other hand Positive-Unlabeled (PU-) Learning has attracted increasing interest in…
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Domain Adaptation methodologies have shown to effectively generalize from a labeled source domain to a label scarce target domain. Previous research has either focused on unlabeled domain adaptation without any target supervision or semi-supervised domain adaptation with few labeled target examples per class. On the other hand Positive-Unlabeled (PU-) Learning has attracted increasing interest in the weakly supervised learning literature since in quite some real world applications positive labels are much easier to obtain than negative ones. In this work we are the first to introduce the challenge of Positive-Unlabeled Domain Adaptation where we aim to generalise from a fully labeled source domain to a target domain where only positive and unlabeled data is available. We present a novel two-step learning approach to this problem by firstly identifying reliable positive and negative pseudo-labels in the target domain guided by source domain labels and a positive-unlabeled risk estimator. This enables us to use a standard classifier on the target domain in a second step. We validate our approach by running experiments on benchmark datasets for visual object recognition. Furthermore we propose real world examples for our setting and validate our superior performance on parking occupancy data.
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Submitted 11 February, 2022;
originally announced February 2022.
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Raman imaging of twist angle variations in twisted bilayer graphene at intermediate angles
Authors:
A. Schäpers,
J. Sonntag,
L. Valerius,
B. Pestka,
J. Strasdas,
K. Watanabe,
T. Taniguchi,
L. Wirtz,
M. Morgenstern,
B. Beschoten,
R. J. Dolleman,
C. Stampfer
Abstract:
Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be a…
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Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be applied preferably right after stacking. We demonstrate that confocal Raman spectroscopy can be utilized to spatially map the twist angle in stacked bilayer graphene for angles between 6.5° and 8° when using a green excitation laser. The twist angles can directly be extracted from the moiré superlattice-activated Raman scattering process of the transverse acoustic (TA) phonon mode. Furthermore, we show that the width of the TA Raman peak contains valuable information on spatial twist angle variations on length scales below the laser spot size of ~ 500 nm.
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Submitted 12 June, 2022; v1 submitted 13 April, 2021;
originally announced April 2021.
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Possible Contexts of Use for In Silico trials methodologies: a consensus-based review
Authors:
Marco Viceconti,
Luca Emili,
Payman Afshari,
Eulalie Courcelles,
Cristina Curreli,
Nele Famaey,
Liesbet Geris,
Marc Horner,
Maria Cristina Jori,
Alexander Kulesza,
Axel Loewe,
Michael Neidlin,
Markus Reiterer,
Cecile F. Rousseau,
Giulia Russo,
Simon J. Sonntag,
Emmanuelle M. Voisin,
Francesco Pappalardo
Abstract:
The term "In Silico Trial" indicates the use of computer modelling and simulation to evaluate the safety and efficacy of a medical product, whether a drug, a medical device, a diagnostic product or an advanced therapy medicinal product. Predictive models are positioned as new methodologies for the development and the regulatory evaluation of medical products. New methodologies are qualified by reg…
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The term "In Silico Trial" indicates the use of computer modelling and simulation to evaluate the safety and efficacy of a medical product, whether a drug, a medical device, a diagnostic product or an advanced therapy medicinal product. Predictive models are positioned as new methodologies for the development and the regulatory evaluation of medical products. New methodologies are qualified by regulators such as FDA and EMA through formal processes, where a first step is the definition of the Context of Use (CoU), which is a concise description of how the new methodology is intended to be used in the development and regulatory assessment process. As In Silico Trials are a disruptively innovative class of new methodologies, it is important to have a list of possible CoUs highlighting potential applications for the development of the relative regulatory science. This review paper presents the result of a consensus process that took place in the InSilicoWorld Community of Practice, an online forum for experts in in silico medicine. The experts involved identified 46 descriptions of possible CoUs which were organised into a candidate taxonomy of nine CoU categories. Examples of 31 CoUs were identified in the available literature; the remaining 15 should, for now, be considered speculative.
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Submitted 28 March, 2021;
originally announced March 2021.
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Engineering tunable strain fields in suspended graphene by microelectromechanical systems
Authors:
Jens Sonntag,
Matthias Goldsche,
Tymofiy Khodkov,
Gerard Verbiest,
Sven Reichardt,
Nils von den Driesch,
Dan Buca,
Christoph Stampfer
Abstract:
Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-MEMS technology; (2) full control over induced strain fields and doping levels within the graphene membrane and their characterization via spatially r…
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Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-MEMS technology; (2) full control over induced strain fields and doping levels within the graphene membrane and their characterization via spatially resolved confocal Raman spectroscopy; and (3) the ability to detect the mechanical coupling of the graphene sheet to the MEMS device with via their mechanical resonator eigenfrequencies.
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Submitted 25 March, 2021;
originally announced March 2021.
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Electrical Control over Phonon Polarization in Strained Graphene
Authors:
Jens Sonntag,
Sven Reichardt,
Bernd Beschoten,
Christoph Stampfer
Abstract:
We explore the tunability of the phonon polarization in suspended uniaxially strained graphene by magneto-phonon resonances. The uniaxial strain lifts the degeneracy of the LO and TO phonons, yielding two cross-linearly polarized phonon modes and a splitting of the Raman G peak. We utilize the strong electron-phonon coupling in graphene and the off-resonant coupling to a magneto-phonon resonance t…
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We explore the tunability of the phonon polarization in suspended uniaxially strained graphene by magneto-phonon resonances. The uniaxial strain lifts the degeneracy of the LO and TO phonons, yielding two cross-linearly polarized phonon modes and a splitting of the Raman G peak. We utilize the strong electron-phonon coupling in graphene and the off-resonant coupling to a magneto-phonon resonance to induce a gate-tunable circular phonon dichroism. This, together with the strain-induced splitting of the G peak, allows us to controllably tune the two linearly polarized G mode phonons into circular phonon modes. We are able to achieve a circular phonon polarization of up to 40 % purely by electrostatic fields and can reverse its sign by tuning from electron to hole doping. This provides unprecedented electrostatic control over the angular momentum of phonons, which paves the way toward phononic applications.
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Submitted 2 March, 2021; v1 submitted 22 December, 2020;
originally announced December 2020.
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Tunable coupling of two mechanical resonators by a graphene membrane
Authors:
G. J. Verbiest,
M. Goldsche,
J. Sonntag,
T. Khodkov,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
Coupled nanomechanical resonators are interesting for both fundamental studies and practical applications as they offer rich and tunable oscillation dynamics. At present, the mechanical coupling in such systems is often mediated by a fixed geometry, such as a joint clamping point of the resonators or a displacement-dependent force. Here we show a graphene-integrated electromechanical system consis…
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Coupled nanomechanical resonators are interesting for both fundamental studies and practical applications as they offer rich and tunable oscillation dynamics. At present, the mechanical coupling in such systems is often mediated by a fixed geometry, such as a joint clamping point of the resonators or a displacement-dependent force. Here we show a graphene-integrated electromechanical system consisting of two physically separated mechanical resonators -- a comb-drive actuator and a suspended silicon beam -- that are tunably coupled by a graphene membrane. The graphene membrane, moreover, provides a sensitive electrical read-out for the two resonating systems silicon structures showing 16 different modes in the frequency range from 0.4~to 24~MHz. In addition, by pulling on the graphene membrane with an electrostatic potential applied to one of the silicon resonators, we control the mechanical coupling, quantified by the $g$-factor, from 20 kHz to 100 kHz. Our results pave the way for coupled nanoelectromechanical systems requiring controllable mechanically coupled resonators.
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Submitted 6 November, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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Radially polarized light beams from spin-forbidden dark excitons and trions in monolayer WSe$_2$
Authors:
Sven Borghardt,
Jens Sonntag,
Jhih-Sian Tu,
Takashi Taniguchi,
Kenji Watanabe,
Bernd Beschoten,
Christoph Stampfer,
Beata Ewa Kardynal
Abstract:
The rich optical properties of transition metal dichalcogenide monolayers (TMD-MLs) render these materials promising candidates for the design of new optoelectronic devices. Despite the large number of excitonic complexes in TMD-MLs, the main focus has been put on optically bright neutral excitons. Spin-forbidden dark excitonic complexes have been addressed for basic science purposes, but not for…
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The rich optical properties of transition metal dichalcogenide monolayers (TMD-MLs) render these materials promising candidates for the design of new optoelectronic devices. Despite the large number of excitonic complexes in TMD-MLs, the main focus has been put on optically bright neutral excitons. Spin-forbidden dark excitonic complexes have been addressed for basic science purposes, but not for applications. We report on spin-forbidden dark excitonic complexes in ML WSe$_2$ as an ideal system for the facile generation of radially polarized light beams. Furthermore, the spatially resolved polarization of photoluminescence beams can be exploited for basic research on excitons in two-dimensional materials.
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Submitted 22 January, 2020;
originally announced January 2020.
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Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure
Authors:
J. Sonntag,
J. Li,
A. Plaud,
A. Loiseau,
J. Barjon,
J. H. Edgar,
C. Stampfer
Abstract:
Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing…
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Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around $10\,\mathrm{μm}$ at low temperatures and electron-phonon scattering limited transport at room temperature.
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Submitted 22 December, 2019;
originally announced December 2019.
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Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields
Authors:
G. J. Verbiest,
H. Janssen,
D. Xu,
X. Ge,
M. Goldsche,
J. Sonntag,
T. Khodkov,
L. Banszerus,
N. von den Driesch,
D. Buca,
K. Watanabe,
T. Taniguchi,
C. Stampfer
Abstract:
We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of t…
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We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance. Through a detailed noise characterization, we find that the best resolution is obtained when operating the HEMT amplifier at the highest gain. We obtained a resolution in the absolute capacitance of 6.4~aF$/\sqrt{\textrm{Hz}}$ at 77 K on a comb-drive actuator, while maintaining a small excitation amplitude of 15~$k_\text{B} T/e$. We show the magnetic field functionality of our impedance bridge by measuring the quantum Hall plateaus of a top-gated hBN/graphene/hBN heterostructure at 60~mK with a probe signal of 12.8~$k_\text{B} T/e$.
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Submitted 27 June, 2019; v1 submitted 17 January, 2019;
originally announced January 2019.
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Fabrication of comb-drive actuators for straining nanostructured suspended graphene
Authors:
M. Goldsche,
G. J. Verbiest,
T. Khodkov,
J. Sonntag,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from $\approx51.6$ k$\mathrmΩ$ to $\approx236$ $\mathrmΩ$ at room te…
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We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from $\approx51.6$ k$\mathrmΩ$ to $\approx236$ $\mathrmΩ$ at room temperature in order to allow for strain-dependent transport measurements. The graphene is integrated by mechanically transferring it directly onto the actuator using a polymethylmethacrylate membrane. Importantly, the integrated graphene can be nanostructured afterwards to optimize device functionality. The minimum feature size of the structured suspended graphene is 30 nm, which allows for interesting device concepts such as mechanically-tunable nanoconstrictions. Finally, we characterize the fabricated devices by measuring the Raman spectrum as well as the a mechanical resonance frequency of an integrated graphene sheet for different strain values.
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Submitted 7 June, 2018; v1 submitted 11 April, 2018;
originally announced April 2018.
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Detecting Ultrasound Vibrations by Graphene Resonators
Authors:
G. J. Verbiest,
J. N. Kirchhof,
J. Sonntag,
M. Goldsche,
T. Khodkov,
C. Stampfer
Abstract:
Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we…
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Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we show a graphene resonator that detects ultrasound vibrations propagating through the substrate on which it was fabricated. We achieve ultimately a resolution of $\approx7$~pm/$\mathrm{\sqrt Hz}$ in ultrasound amplitude at frequencies up to 100~MHz. Thanks to an extremely high nonlinearity in the mechanical restoring force, the resonance frequency itself can also be used for ultrasound detection. We observe a shift of 120~kHz at a resonance frequency of 65~MHz for an induced vibration amplitude of 100~pm with a resolution of 25~pm. Remarkably, the nonlinearity also explains the generally observed asymmetry in the resonance frequency tuning of the resonator when pulled upon with an electrostatic gate. This work puts forward a sensor design that fits onto an atomic force microscope cantilever and therefore promises direct ultrasound detection at the nanoscale for nondestructive subsurface characterization.
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Submitted 22 June, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Impact of Many-Body Effects on Landau Levels in Graphene
Authors:
J. Sonntag,
S. Reichardt,
L. Wirtz,
B. Beschoten,
M. I. Katsnelson,
F. Libisch,
C. Stampfer
Abstract:
We present magneto-Raman spectroscopy measurements on suspended graphene to investigate the charge carrier density-dependent electron-electron interaction in the presence of Landau levels. Utilizing gate-tunable magneto-phonon resonances, we extract the charge carrier density dependence of the Landau level transition energies and the associated effective Fermi velocity $v_\mathrm{F}$. In contrast…
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We present magneto-Raman spectroscopy measurements on suspended graphene to investigate the charge carrier density-dependent electron-electron interaction in the presence of Landau levels. Utilizing gate-tunable magneto-phonon resonances, we extract the charge carrier density dependence of the Landau level transition energies and the associated effective Fermi velocity $v_\mathrm{F}$. In contrast to the logarithmic divergence of $v_\mathrm{F}$ at zero magnetic field, we find a piecewise linear scaling of $v_\mathrm{F}$ as a function of charge carrier density, due to a magnetic field-induced suppression of the long-range Coulomb interaction. We quantitatively confirm our experimental findings by performing tight-binding calculations on the level of the Hartree-Fock approximation, which also allow us to estimate an excitonic binding energy of $\approx$ 6 meV contained in the experimentally extracted Landau level transitions energies.
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Submitted 21 February, 2018; v1 submitted 15 December, 2017;
originally announced December 2017.
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Tailoring mechanically-tunable strain fields in graphene
Authors:
M. Goldsche,
J. Sonntag,
T. Khodkov,
G. Verbiest,
S. Reichardt,
C. Neumann,
T. Ouaj,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substr…
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There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$μ$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.
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Submitted 13 November, 2017;
originally announced November 2017.
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Line Shape of the Raman 2D Peak of Graphene in Van Der Waals Heterostructures
Authors:
Christoph Neumann,
Luca Banszerus,
Michael Schmitz,
Sven Reichardt,
Jens Sonntag,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Christoph Stampfer
Abstract:
The Raman 2D line of graphene is widely used for device characterization and during device fabrication as it contains valuable information on e.g. the direction and magnitude of mechanical strain and doping. Here we present systematic asymmetries in the 2D line shape of exfoliated graphene and graphene grown by chemical vapor deposition. Both graphene crystals are fully encapsulated in van der Waa…
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The Raman 2D line of graphene is widely used for device characterization and during device fabrication as it contains valuable information on e.g. the direction and magnitude of mechanical strain and doping. Here we present systematic asymmetries in the 2D line shape of exfoliated graphene and graphene grown by chemical vapor deposition. Both graphene crystals are fully encapsulated in van der Waals heterostructures, where hexagonal boron nitride and tungsten diselenide are used as substrate materials. In both material stacks, we find very low doping values and extremely homogeneous strain distributions in the graphene crystal, which is a hall mark of the outstanding electronic quality of these samples. By fitting double Lorentzian functions to the spectra to account for the contributions of inner and outer processes to the 2D peak, we find that the splitting of the sub-peaks, $6.6 \pm 0.5$ cm$^{-1}$(hBN-Gr-WSe2) and $8.9 \pm 1.0$ cm$^{-1}$ (hBN-Gr-hBN), is significantly lower than the values reported in previous studies on suspended graphene.
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Submitted 9 August, 2016;
originally announced August 2016.
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Giant magneto-photoelectric effect in suspended graphene
Authors:
Jens Sonntag,
Annika Kurzmann,
Martin Geller,
Friedemann Queisser,
Axel Lorke,
Ralf Schützhold
Abstract:
We study the optical response of a suspended graphene field-effect transistor in magnetic fields of up to 9 T (quantum Hall regime). With an illumination power of only 3 μW, we measure a photocurrent of up to 400 nA, corresponding to a photo-responsivity of 0.14 A/W, which we believe to be the highest value ever measured in single-layer graphene. We estimate that every absorbed photon creates more…
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We study the optical response of a suspended graphene field-effect transistor in magnetic fields of up to 9 T (quantum Hall regime). With an illumination power of only 3 μW, we measure a photocurrent of up to 400 nA, corresponding to a photo-responsivity of 0.14 A/W, which we believe to be the highest value ever measured in single-layer graphene. We estimate that every absorbed photon creates more than 8 electron-hole pairs, which demonstrates highly effective carrier multiplication. As suggested by the dependence of the photocurrent on gate voltage and magnetic field, we propose a ballistic two-stage mechanism where the incident photons create primary charge carriers which then excite secondary charge carriers in the chiral edge states via Auger-type inelastic Coulomb scattering processes at the graphene edge.
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Submitted 22 May, 2015; v1 submitted 7 May, 2015;
originally announced May 2015.
