Showing 1–5 of 5 results for author: Shinde, S M

Graphene phase modulators operating in the transparency regime

Authors: H. F. Y. Watson, A. Ruocco, M. Tiberi, J. E. Muench, O. Balci, S. M. Shinde, S. Mignuzzi, M. Pantouvaki, D. Van Thourhout, R. Sordan, A. Tomadin, M. Romagnoli, A. C. Ferrari

Abstract: Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pu… ▽ More Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pure phase modulation, where the phase of the optical signal is controlled without changing its intensity. Phase modulators are characterised by the voltage required to achieve a $π$ phase shift V$_π$, the device length L, and their product V$_π$L. To reduce power consumption, IQ modulators are needed with$<$1V drive voltages and compact (sub-cm) dimensions, which translate in V$_π$L$<$1Vcm. Si and LiNbO$_3$ (LN) IQ modulators do not currently meet these requirements, because V$_π$L$>$1Vcm. Here, we report a double single-layer graphene (SLG) Mach-Zehnder modulator (MZM) with pure phase modulation in the transparent regime, where optical losses are minimised and remain constant with increasing voltage. Our device has $V_πL\sim$0.3Vcm, matching state-of-the-art SLG-based MZMs and plasmonic LN MZMs, but with pure phase modulation and low insertion loss ($\sim$5dB), essential for IQ modulation. Our $V_πL$ is$\sim$5 times lower than the lowest thin-film LN MZMs, and$\sim$3 times lower than the lowest Si MZMs. This enables devices with complementary metal-oxide semiconductor compatible V$_π$L ($<$1Vcm) and smaller footprint than LN or Si MZMs, improving circuit density and reducing power consumption by one order of magnitude. △ Less

Submitted 25 December, 2023; originally announced January 2024.

Monolayer WS$_2$ electro- and photo-luminescence enhancement by TFSI treatment

Authors: A. R. Cadore, B. L. T. Rosa, I. Paradisanos, S. Mignuzzi, D. De Fazio, E. M. Alexeev, J. E. Muench, G. Kakavelakis, S. M. Shinde, D. Yoon, S. Tongay, K. Watanabe, T. Taniguchi, E. Lidorikis, I. Goykhman, G. Soavi, A. C. Ferrari

Abstract: Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum… ▽ More Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum efficiency as low as$\sim$10$^{-4}$\%. Here, we show that the superacid bis-(triuoromethane)sulfonimide (TFSI) treatment of monolayer WS$_2$-LEDs boosts EL quantum efficiency by over one order of magnitude at room temperature. Non-treated devices emit light mainly from negatively charged excitons, while the emission in treated ones predominantly involves radiative recombination of neutral excitons. This paves the way to tunable and efficient LMH-LEDs △ Less

Submitted 2 May, 2023; originally announced May 2023.

Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures

Authors: M. Asgari, L. Viti, O. Balci, S. M. Shinde, J. Zhang, H. Ramezani, S. Sharma, A. Meersha, G. Menichetti, C. McAleese, B. Conran, X. Wang, A. Tomadin, A. C. Ferrari, M. S. Vitiello

Abstract: The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration… ▽ More The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration of SLG-based active elements with pre-existing technological platforms in a scalable way, while maintaining performance level unperturbed. Here, we report on the development of room temperature THz detection in large-area SLG, grown by chemical vapor deposition (CVD), integrated in antenna-coupled field effect transistors. We selectively activate the photo-thermoelectric detection dynamics, and we employ different dielectric configurations on SLG on Al2O3 with and without large-area CVD hBN capping to investigate their effect on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times ~5ns and noise equivalent powers ~1nWHz-1/2 are achieved under zero-bias operation. This shows the feasibility of scalable, large-area, layered materials heterostructures for THz detection. △ Less

Submitted 28 June, 2022; originally announced June 2022.

Comments: 15 pages, 4 Figures. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at the link https://doi.org/10.1063/5.0097726

Tunable, grating-gated, graphene-on-polyimide terahertz modulators

Authors: Alessandra Di Gaspare, Eva A. A. Pogna, Luca Salemi, Osman Balci, Alisson R. Cadore, Sachin M. Shinde, Lianhe Li, Cinzia di Franco, A. Giles Davies, Edmund Linfield, Andrea C. Ferrari, Gaetano Scamarcio, Miriam S. Vitiello

Abstract: We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonan… ▽ More We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. We get 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9 _ 2.7 THz range. We then integrate our modulator with a multimode THz QCL. By adjusting the modulator operational bandwidth, we demonstrate that the graphene modulator can partially compensates the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the laser operational range, with 98 equidistant optical modes and with a spectral coverage of ~ 1.2 THz. This has significant potential for frontier applications in the terahertz, as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and as a metrological tool for spectroscopy at THz frequencies. △ Less

Submitted 22 November, 2020; originally announced December 2020.

Comments: 22 pages, 6 figures

First principles study on small ZrAln and HfAln clusters: structural, stability, electronic states and CO2 adsorption

Authors: Hardik L. Kagdada, Shweta D. Dabhi, Venu Mankad, Satyam M. Shinde, Prafulla K. Jha

Abstract: We report a first principles study based on density functional theory on the structural and electronic properties of transition metal Zr and Hf doped small aluminum clusters with 1 to 7 aluminum atoms. We have used B3PW91 with LANL2DZ basis set in Gaussian 09 package. The stability analysis reveals that the ZrAl4 and HfAl4 structures with C2v symmetry and square pyramid geometry are lowest energy… ▽ More We report a first principles study based on density functional theory on the structural and electronic properties of transition metal Zr and Hf doped small aluminum clusters with 1 to 7 aluminum atoms. We have used B3PW91 with LANL2DZ basis set in Gaussian 09 package. The stability analysis reveals that the ZrAl4 and HfAl4 structures with C2v symmetry and square pyramid geometry are lowest energy structures. The most stable structures in ZrAl5 and HfAl5 are distorted tetrahedron type structure with symmetry C1. The binding energies per atom for transition metal doped Aln clusters increases with the cluster size, while the second order difference in total energy show oscillatory behavior with even and odd cluster size. The HOMO and LUMO gap for ZrAln is larger than the HfAln clusters except for n being 1 and 3. The HfAl6 has more tendency to accept or give away electrons. The negative charge exists on Zr and Hf indicating that the electron transfers from Al atom to transition metal, Zr and Hf. The thermodynamical analysis suggest that the HfAl6 cluster has highest exothermicity compared to not only all considered Al clusters but also other transition metal doped Al clusters reported in J. Phys. Chem. C, 120, 10027, 2016. △ Less

Submitted 27 June, 2018; originally announced June 2018.

Comments: 22 pages, 6 figures, 3 tables