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Enhancing atomic ordering, magnetic and transport properties of Mn2VGa Heusler alloy thin films toward negatively spin-polarized charge injection
Authors:
Z. H. Li,
H. Suto,
V. Barwal,
K. Masuda,
T. T. Sasaki,
Z. X. Chen,
H. Tajiri,
L. S. R. Kumara,
T. Koganezawa,
K. Amemiya,
S. Kokado,
K. Hono,
Y. Sakuraba
Abstract:
Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = -0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarizati…
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Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = -0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarization derived from a pseudo band gap in the majority spin channel. The Mn2+xV1-xGa films epitaxially grown on MgO(001) substrates exhibits variations of B2 and L21 order with the Mn concentration. A high-quality L21 ordered film was achieved in the Mn-rich composition (x = +0.2) with B2 and L21 order parameters of 0.97 and 0.86, respectively, and a saturation magnetization of 1.4 μB/f.u, which agrees the Slater-Pauling rule. Scanning transmission electron microscopy observations showed that B2 and L21 phases coexist in Mn-poor and stoichiometric films, while the L21 phase is dominant in the Mn-rich film with small amounts of Mn-V and Mn-Ga disorders, as revealed by laboratory and anomalous X-ray diffraction. Combined first-principles calculations and anisotropic magnetoresistance analysis confirm that the addition of excess Mn preserves the high spin polarization by suppressing the formation of detrimental antisites of V atoms occupying Mn sites. Therefore, the Mn-rich composition is promising for negatively spin-polarized charge injection in Mn2VGa-based spintronic applications.
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Submitted 10 May, 2024;
originally announced May 2024.
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Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure
Authors:
Jieyuan Song,
Thomas Scheike,
Cong He,
Zhenchao Wen,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Hiroaki Sukegawa,
Seiji Mitani
Abstract:
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of (001)-type MTJs hinders the further development of spintronic devices. Here, as an alternative to the (001)-type MTJs, an fcc(111)-type MTJ using a fully epitaxi…
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Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of (001)-type MTJs hinders the further development of spintronic devices. Here, as an alternative to the (001)-type MTJs, an fcc(111)-type MTJ using a fully epitaxial CoFe/rock-salt MgAlO (MAO)/CoFe is explored to introduce close-packed lattice systems into MTJs. Using an atomically flat Ru(0001) epitaxial buffer layer, fcc(111) epitaxial growth of the CoFe/MAO/CoFe trilayer is achieved. Sharp CoFe(111)/MAO(111) interfaces are confirmed due to the introduction of periodic dislocations by forming a 5:6 in-plane lattice matching structure. The fabricated (111) MTJ exhibits a tunnel magnetoresistance ratio of 37% at room temperature (47% at 10 K). Symmetric differential conductance curves with respect to bias polarity are observed, indicating the achievement of nearly identical upper and lower MAO interface qualities. Despite the charge-uncompensated (111) orientation for a rock-salt-like MAO barrier, the achievement of flat, stable, and spin-polarized barrier interfaces opens a promising avenue for expanding the design of MTJ structures.
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Submitted 8 August, 2023;
originally announced August 2023.
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Multi-level recording in dual-layer FePt-C granular film for heat-assisted magnetic recording
Authors:
P. Tozman,
S. Isogami,
I. Suzuki,
A. Bolyachkin,
H. Sepehri-Amin,
S. J. Greaves,
H. Suto,
Y. Sasaki,
H. T. Y. Chang,
Y Kubota,
P. Steiner,
P. -W. Huang,
K. Hono,
Y. K. Takahashi
Abstract:
Multi-level magnetic recording is a new concept for increasing the data storage capacity of hard disk drives. However, its implementation has been limited by a lack of suitable media capable of storing information at multiple levels. Herein, we overcome this problem by developing dual FePt-C nanogranular films separated by a Ru-C breaking layer with a cubic crystal structure. The FePt grains in th…
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Multi-level magnetic recording is a new concept for increasing the data storage capacity of hard disk drives. However, its implementation has been limited by a lack of suitable media capable of storing information at multiple levels. Herein, we overcome this problem by developing dual FePt-C nanogranular films separated by a Ru-C breaking layer with a cubic crystal structure. The FePt grains in the bottom and top layers of the developed media exhibited different effective magnetocrystalline anisotropies and Curie temperatures. The former is realized by different degrees of ordering in the L10-FePt grains, whereas the latter was attributed to the diffusion of Ru, thereby enabling separate magnetic recordings at each layer under different magnetic fields and temperatures. Furthermore, the magnetic measurements and heat-assisted magnetic recording simulations showed that these media enabled 3-level recording and could potentially be extended to 4-level recording, as the up-down and down-up states exhibited non-zero magnetization.
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Submitted 5 July, 2023;
originally announced July 2023.
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Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface
Authors:
Y. Fujita,
Y. Miura,
T. Sasaki,
T. Nakatani,
K. Hono,
Y. Sakuraba
Abstract:
We study spin-scattering asymmetry at the interface of two ferromagnets (FMs) based on a half-metallic Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si (CFMS)/CoFe interface. First-principles ballistic transport calculations based on Landauer formula for (001)-CoFe/CFMS/CoFe indicate strong spin-dependent conductance at the CFMS/CoFe interface, suggesting a large interface spin-scattering asymmetry coefficient (…
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We study spin-scattering asymmetry at the interface of two ferromagnets (FMs) based on a half-metallic Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si (CFMS)/CoFe interface. First-principles ballistic transport calculations based on Landauer formula for (001)-CoFe/CFMS/CoFe indicate strong spin-dependent conductance at the CFMS/CoFe interface, suggesting a large interface spin-scattering asymmetry coefficient ($γ$). Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valve (PSV) devices involving CoFe/CFMS/Ag/CFMS/CoFe structures exhibit an enhancement in MR output owing to the formation of the CFMS/CoFe interface at room temperature (RT). This is well reproduced qualitatively by a simulation based on a generalized two-current series-resistor model with considering the presence of $γ$ at the CFMS/CoFe interface, half-metallicity of CFMS, and combinations of terminated atoms at the interfaces in the CPP-GMR PSV structure. We show direct evidence for a large $γ$ at a half-metallic FM/FM interface and its impact on CPP-GMR effect even at RT.
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Submitted 10 October, 2021; v1 submitted 4 August, 2021;
originally announced August 2021.
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Structural insight using anomalous XRD into Mn2CoAl Heusler alloy films grown by magnetron sputtering, IBAS and MBE techniques
Authors:
Hiroo Tajiri,
Loku Singgappulige Rosantha Kumara,
Yuya Sakuraba,
Zixi Chen,
Jian Wang,
Weinan Zhou,
Kushwaha Varun,
Kenji Ueda,
Shinya Yamada,
Kohei Hamaya,
Kazuhiro Hono
Abstract:
Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods: ultra-high vacuum magnetron spattering, Ar-ion beam assisted sputtering, and molecular beam epitaxy, are investigated by comparing their electric transport properties, microstructures and atomic-level structures. Of the samples, the Mn2CoAl thin film grown by MBE consists of Mn-…
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Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods: ultra-high vacuum magnetron spattering, Ar-ion beam assisted sputtering, and molecular beam epitaxy, are investigated by comparing their electric transport properties, microstructures and atomic-level structures. Of the samples, the Mn2CoAl thin film grown by MBE consists of Mn- and Co-rich phases, the structures of which are determined to be the L21B-type and disordered L21-type, respectively, according to anomalous XRD analysis. None of them forms the XA-type structure expected for SGS Heusler alloy, although they all show SGS characteristics. We suggest, to validate SGS characteristics, it is necessary to extract not only magnetic and electric transport properties but also information about microstructures and atomic-scale structures of the films including defects such as atomic swap.
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Submitted 22 December, 2020;
originally announced December 2020.
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Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
Authors:
Thomas Scheike,
Qingyi Xiang,
Zhenchao Wen,
Hiroaki Sukegawa,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Seiji Mitani
Abstract:
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a funct…
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Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.
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Submitted 17 November, 2020;
originally announced November 2020.
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Voltage-controlled magnetic anisotropy under the electronic structure modulation in quantum wells
Authors:
Qingyi Xiang,
Yoshio Miura,
Muftah Al-Mahdawi,
Thomas Scheike,
Xiandong Xu,
Yuya Sakuraba,
Shinya Kasai,
Zhenchao Wen,
Hiroaki Sukegawa,
Seiji Mitani,
Kazuhiro Hono
Abstract:
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ…
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Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ with an even number of Fe atomic layers, we observed a novel A-shaped VCMA curve for a particular QW state, where magnetic anisotropy energy (MAE) reaches a local maximum at zero bias and reduces when applying both positive and negative bias, i.e., a novel bi-polar VCMA effect. Our ab initio calculations demonstrate that the QW states give an additional contribution to perpendicular magnetic anisotropy (PMA), which can explain not only the A-shaped VCMA but also the Fe-layer-number parity dependence of VCMA. The present study suggests that the QW-modulated VCMA should open a new pathway to design VCMA-assisted MRAM.
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Submitted 13 November, 2020;
originally announced November 2020.
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Anisotropy induced spin re-orientation in chemically-modulated amorphous ferrimagnetic films
Authors:
E. Kirk,
C. Bull,
S. Finizio,
H. Sepehri-Amin,
S. Wintz,
A. K. Suszka,
N. S. Bingham,
P. Warnicke,
K. Hono,
P. W. Nutter,
J. Raabe,
G. Hrkac,
T. Thomson,
L. J. Heyderman
Abstract:
The ability to tune the competition between the in-plane and out-of-plane orientation of magnetization provides a means to construct thermal sensors with a sharp spin re-orientation transition at specific temperatures. We have observed such a tuneable, temperature driven spin re-orientation in structurally amorphous, ferrimagnetic rare earth-transition metal (RE-TM) alloy thin films using scanning…
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The ability to tune the competition between the in-plane and out-of-plane orientation of magnetization provides a means to construct thermal sensors with a sharp spin re-orientation transition at specific temperatures. We have observed such a tuneable, temperature driven spin re-orientation in structurally amorphous, ferrimagnetic rare earth-transition metal (RE-TM) alloy thin films using scanning transmission X-ray microscopy (STXM) and magnetic measurements. The nature of the spin re-orientation transition in FeGd can be fully explained by a non-equilibrium, nanoscale modulation of the chemical composition of the films. This modulation leads to a magnetic domain pattern of nanoscale speckles superimposed on a background of in-plane domains that form Laudau configurations in micron-scale patterned elements. It is this speckle magnetic structure that gives rise to a sharp two step-reversal mechanism that is temperature dependent. The possibility to balance competing anisotropies through the temperature opens opportunities to create and manipulate topological spin textures.
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Submitted 7 July, 2020;
originally announced July 2020.
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The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons
Authors:
Zhendong Chi,
Yong-Chang Lau,
Xiandong Xu,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Masamitsu Hayashi
Abstract:
We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi$_{1-x}$Sb$_x$ allo…
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We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi$_{1-x}$Sb$_x$ alloy. The SHC increases with increasing thickness of the Bi$_{1-x}$Sb$_x$ alloy before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present in the films, play little role. Surprisingly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of Dirac-like, thermally-excited electrons in the $L$ valley of the narrow gap Bi$_{1-x}$Sb$_x$ alloy.
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Submitted 28 October, 2019;
originally announced October 2019.
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Observation of anomalous Ettingshausen effect and large transverse thermoelectric conductivity in permanent magnets
Authors:
Asuka Miura,
Hossein Sepehri-Amin,
Keisuke Masuda,
Hiroki Tsuchiura,
Yoshio Miura,
Ryo Iguchi,
Yuya Sakuraba,
Junichiro Shiomi,
Kazuhiro Hono,
Ken-ichi Uchida
Abstract:
This study focuses on the potential of permanent magnets as thermoelectric converters. It is found that a SmCo$_5$-type magnet exhibits the large anomalous Ettingshausen effect (AEE) at room temperature and that its charge-to-heat current conversion coefficient is more than one order of magnitude greater than that of typical ferromagnetic metals. The large AEE is an exclusive feature of the SmCo…
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This study focuses on the potential of permanent magnets as thermoelectric converters. It is found that a SmCo$_5$-type magnet exhibits the large anomalous Ettingshausen effect (AEE) at room temperature and that its charge-to-heat current conversion coefficient is more than one order of magnitude greater than that of typical ferromagnetic metals. The large AEE is an exclusive feature of the SmCo$_5$-type magnet among various permanent magnets in practical use, which is independent of the conventional performance of magnets based on static magnetic properties. The experimental results show that the large AEE originates from the intrinsic transverse thermoelectric conductivity of SmCo$_5$. This finding makes a connection between permanent magnets and thermal energy engineering, providing the basis for creating "thermoelectric permanent magnets."
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Submitted 28 November, 2019; v1 submitted 8 October, 2019;
originally announced October 2019.
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Coercivity enhancement of selective laser sintered NdFeB magnets by grain boundary infiltration
Authors:
Christian Huber,
Hossein Sepehri-Amin,
Michael Goertler,
Martin Groenefeld,
Iulian Teliban,
Kazuhiro Hono,
Dieter Suess
Abstract:
Laser powder bed fusion is a well-established additive manufacturing method that can be used for the production of net-shaped Nd-Fe-B sintered magnets. However, low coercivity has been one of the drawbacks in the laser powder bed fusion processed Nd-Fe-B magnets. In this work, we have demonstrated that the grain boundary diffusion process using low-melting Nd-Cu, Nd-Al-Ni-Cu, and Nd-Tb-Cu alloys t…
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Laser powder bed fusion is a well-established additive manufacturing method that can be used for the production of net-shaped Nd-Fe-B sintered magnets. However, low coercivity has been one of the drawbacks in the laser powder bed fusion processed Nd-Fe-B magnets. In this work, we have demonstrated that the grain boundary diffusion process using low-melting Nd-Cu, Nd-Al-Ni-Cu, and Nd-Tb-Cu alloys to the selective laser sintered NdFeB magnets can results in a substantial enhancement of coercivity from 0.65 T to 1.5 T. Detailed microstructure investigations clarified formation of Nd-rich grain boundary phase, introducing Tb-rich shell at the surface of Nd2Fe14B grains, and maintaining the grain size in nano-scale are responsible for the large coercivity enhancement.
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Submitted 6 March, 2019;
originally announced March 2019.
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Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator
Authors:
W. Zhou,
H. Sepehri-Amin,
T. Taniguchi,
S. Tamaru,
Y. Sakuraba,
S. Kasai,
H. Kubota,
K. Hono
Abstract:
We investigated the dynamics of a novel design of spin torque oscillator (STO) for microwave assisted magnetic recording. Using Ni$_{80}$Fe$_{20}$ (NiFe) as the polarizer and Fe$_{67}$Co$_{33}$ (FeCo) as the field generating layer, we experimentally observed the magnetization reversal of NiFe, followed by multiple signals in the power spectra as the bias voltage increased. The signals reflected th…
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We investigated the dynamics of a novel design of spin torque oscillator (STO) for microwave assisted magnetic recording. Using Ni$_{80}$Fe$_{20}$ (NiFe) as the polarizer and Fe$_{67}$Co$_{33}$ (FeCo) as the field generating layer, we experimentally observed the magnetization reversal of NiFe, followed by multiple signals in the power spectra as the bias voltage increased. The signals reflected the out-of-plane precession (OPP) mode oscillation of both FeCo and NiFe, as well as the magnetoresistance effect of the STO device, which had the frequency equal to the difference between the oscillation frequency of NiFe and FeCo. Such dynamics were reproduced by micromagnetic simulation. In addition to the merit of realizing the OPP mode oscillation with a simple and thin structure suitable for a narrow gap recording head, the experimental results using this design suggested that a large cone angle of $\sim$ 70$^{\circ}$ for the OPP mode oscillation of FeCo was achieved, which was estimated based on the macrospin model.
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Submitted 14 January, 2019;
originally announced January 2019.
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Searching the weakest link: Demagnetizing fields and magnetization reversal in permanent magnets
Authors:
J. Fischbacher,
A. Kovacs,
L. Exl J. Kühnel,
E. Mehofer,
H. Sepehri-Amin,
T. Ohkubo,
K. Hono,
T. Schrefl
Abstract:
Magnetization reversal in permanent magnets occurs by the nucleation and expansion of reversed domains. Micromagnetic theory offers the possibility to localize the spots within the complex structure of the magnet where magnetization reversal starts. We compute maps of the local nucleation field in a Nd2Fe14B permanent magnet using a model order reduction approach. Considering thermal fluctuations…
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Magnetization reversal in permanent magnets occurs by the nucleation and expansion of reversed domains. Micromagnetic theory offers the possibility to localize the spots within the complex structure of the magnet where magnetization reversal starts. We compute maps of the local nucleation field in a Nd2Fe14B permanent magnet using a model order reduction approach. Considering thermal fluctuations in numerical micromagnetics we can also quantify the reduction of the coercive field due to thermal activation. However, the major reduction of the coercive field is caused by the soft magnetic grain boundary phases and misorientation if there is no surface damage.
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Submitted 24 May, 2018;
originally announced May 2018.
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Impact of intergrain spin transfer torques due to huge thermal gradients on the performance of heat assisted magnetic recording
Authors:
Bernard Dieny,
Mair Chshiev,
Brian Charles,
Nikita Strelkov,
Alain Truong,
Olivier Fruchart,
Ali Hallal,
Jian Wang,
Yukiko K. Takahashi,
Tomohito Mizuno,
Kazuhiro Hono
Abstract:
Heat assisted magnetic recording (HAMR) is a new technology which uses temporary near field laser heating of the media during write to increase hard disk drive storage density. By using plasmonic antenna embedded in the write head, extremely high thermal gradient are created in the recording media (up to 10K/nm). State of the art HAMR media consists of grains of FePtX ordered alloys exhibiting hig…
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Heat assisted magnetic recording (HAMR) is a new technology which uses temporary near field laser heating of the media during write to increase hard disk drive storage density. By using plasmonic antenna embedded in the write head, extremely high thermal gradient are created in the recording media (up to 10K/nm). State of the art HAMR media consists of grains of FePtX ordered alloys exhibiting high perpendicular anisotropy separated by insulating grain boundaries. Nearby the plasmonic antenna, the difference of temperature between two 8nm wide neighboring grains in the media can reach 80K, representing a gigantic thermal gradient of ~40K/nm across the grain boundary. Such situations with much weaker thermal gradient (~1K/nm, already considered as very large) have already been studied in the field of spincaloritronics. There, it was shown that very large spin transfer torques due to thermal gradients can arise in magnetic tunnel junctions which can even yield magnetization switching. Considering that two neighboring grains separated by an insulating grain boundary in a HAMR media can be viewed as a magnetic tunnel junction and that the thermal gradients in HAMR are one to two orders of magnitude larger than those existing in conventional spincaloritronics, one may expect a major impact from these thermal torques on magnetization switching dynamics and therefore on HAMR recording performances. This paper combines theory, experiments aiming at determining the polarization of tunneling electrons across the media grain boundaries, and micromagnetic simulations of recording process. It is shown that the thermal in-plane torque can have a detrimental impact on the recording performances by favoring antiparallel magnetic alignment between neighboring grains during the media cooling. Implications on media design are discussed in order to limit the impact of these thermal torques.
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Submitted 8 December, 2017;
originally announced December 2017.
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High-throughput direct measurement of magnetocaloric effect based on lock-in thermography technique
Authors:
Yusuke Hirayama,
Ryo Iguchi,
Xue-Fei Miao,
Kazuhiro Hono,
Ken-ichi Uchida
Abstract:
We demonstrate a high-throughput direct measurement method for the magnetocaloric effect (MCE) by means of a lock-in thermography (LIT) technique. This method enables systematic measurements of the magnetic-field and operation-frequency dependences of the temperature change induced by the MCE. This is accomplished in a shorter time compared with conventional adiabatic temperature measurement metho…
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We demonstrate a high-throughput direct measurement method for the magnetocaloric effect (MCE) by means of a lock-in thermography (LIT) technique. This method enables systematic measurements of the magnetic-field and operation-frequency dependences of the temperature change induced by the MCE. This is accomplished in a shorter time compared with conventional adiabatic temperature measurement methods. The direct measurement based on LIT is free from any possible miscalculations and errors arising from indirect measurements using thermodynamic relations. Importantly, the LIT technique makes simultaneous MCE measurements of multiple materials possible without increasing measurement time, realizing high-throughput investigations of the MCE. By applying this method to Gd, we obtain the MCE-induced temperature change of 1.84 $\pm$ 0.11 K under a modulation field of 1.0 T and modulation frequency of 0.5 Hz at a temperature of 300.5 $\pm$ 0.5 K, offering evidence that the LIT method gives quantitative results.
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Submitted 16 October, 2017;
originally announced October 2017.
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Giant interfacial perpendicular magnetic anisotropy in Fe/CuIn$_{1-x}$Ga$_x$Se$_2$ beyond Fe/MgO
Authors:
Keisuke Masuda,
Shinya Kasai,
Yoshio Miura,
Kazuhiro Hono
Abstract:
We study interfacial magnetocrystalline anisotropies in various Fe/semiconductor heterostructures by means of first-principles calculations. We find that many of those systems show perpendicular magnetic anisotropy (PMA) with a positive value of the interfacial anisotropy constant $K_{\rm i}$. In particular, the Fe/CuInSe$_2$ interface has a large $K_{\rm i}$ of $\sim 2.3\,{\rm mJ/m^2}$, which is…
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We study interfacial magnetocrystalline anisotropies in various Fe/semiconductor heterostructures by means of first-principles calculations. We find that many of those systems show perpendicular magnetic anisotropy (PMA) with a positive value of the interfacial anisotropy constant $K_{\rm i}$. In particular, the Fe/CuInSe$_2$ interface has a large $K_{\rm i}$ of $\sim 2.3\,{\rm mJ/m^2}$, which is about 1.6 times larger than that of Fe/MgO known as a typical system with relatively large PMA. We also find that the values of $K_{\rm i}$ in almost all the systems studied in this work follow the well-known Bruno's relation, which indicates that minority-spin states around the Fermi level provide dominant contributions to the interfacial magnetocrystalline anisotropies. Detailed analyses of the local density of states and wave-vector-resolved anisotropy energy clarify that the large $K_{\rm i}$ in Fe/CuInSe$_2$ is attributed to the preferable $3d$-orbital configurations around the Fermi level in the minority-spin states of the interfacial Fe atoms. Moreover, we have shown that the locations of interfacial Se atoms are the key for such orbital configurations of the interfacial Fe atoms.
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Submitted 1 November, 2017; v1 submitted 10 July, 2017;
originally announced July 2017.
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MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height
Authors:
Hiroaki Sukegawa,
Yushi Kato,
Mohamed Belmoubarik,
P. -H. Cheng,
Tadaomi Daibou,
Naoharu Shimomura,
Yuuzo Kamiguchi,
Junichi Ito,
Hiroaki Yoda,
Tadakatsu Ohkubo,
Seiji Mitani,
Kazuhiro Hono
Abstract:
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with…
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Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the barrier height of the MgGa2O4 barrier is much lower than that in an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product.
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Submitted 11 November, 2016;
originally announced November 2016.
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Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions
Authors:
Mohamed Belmoubarik,
Hiroaki Sukegawa,
Tadakatsu Ohkubo,
Seiji Mitani,
Kazuhiro Hono
Abstract:
We investigated the effect of a Mg-Al layer insertion at the bottom interface of epitaxial Fe/$MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent transport properties. The tunnel magnetoresistance (TMR) ratio and differential conductance spectra for the parallel magnetic configuration exhibited clear dependence on the inserted Mg-Al thickness. A slight Mg-Al insertion…
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We investigated the effect of a Mg-Al layer insertion at the bottom interface of epitaxial Fe/$MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent transport properties. The tunnel magnetoresistance (TMR) ratio and differential conductance spectra for the parallel magnetic configuration exhibited clear dependence on the inserted Mg-Al thickness. A slight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a large TMR ratio above 200% at room temperature and observing a distinct local minimum structure in conductance spectra. In contrast, thicker Mg-Al (> 0.2 nm) induced a reduction of TMR ratios and featureless conductance spectra, indicating a degradation of the bottom-Fe/$MgAl_{2}O_{4}$ interface. Therefore, a minimal Mg-Al insertion was found to be effective to maximize the TMR ratio for a sputtered $MgAl_{2}O_{4}$-based MTJ.
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Submitted 8 November, 2016;
originally announced November 2016.
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Interdiffusion in epitaxial ultrathin Co2FeAl/MgO heterostructures with interface-induced perpendicular magnetic anisotropy
Authors:
Zhenchao Wen,
Jason Paul Hadorn,
Jun Okabayashi,
Hiroaki Sukegawa,
Tadakatsu Ohkubo,
Koichiro Inomata,
Seiji Mitani,
Kazuhiro Hono
Abstract:
The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray magnetic circular dichroism. We found that Al atoms from the Co2FeAl layer significantly interdiffuse into MgO, forming an Al-deficient Co-…
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The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray magnetic circular dichroism. We found that Al atoms from the Co2FeAl layer significantly interdiffuse into MgO, forming an Al-deficient Co-Fe-Al/Mg-Al-O structure near the Co2FeAl/MgO interface. This atomic replacement may play an additional role for enhancing PMA, which is consistent with the observed large perpendicular orbital magnetic moments of Fe atoms at the interface. This work suggests that control of interdiffusion at ferromanget/barrier interfaces is critical for designing an interface-induced PMA system.
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Submitted 10 October, 2016;
originally announced October 2016.
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Accumulative magnetic switching of ultra-high-density recording media by circularly polarized light
Authors:
Y. K. Takahashi,
R. Medapalli,
S. Kasai,
J. Wang,
K. Ishioka,
S. H. Wee,
O. Hellwig,
K. Hono,
E. E. Fullerton
Abstract:
Manipulation of the magnetization by external energies other than magnetic field, such as spin-polarized current1-4, electric voltage5,6 and circularly polarized light7-11 gives a paradigm shift in magnetic nanodevices. Magnetization control of ferromagnetic materials only by circularly polarized light has received increasing attention both as a fundamental probe of the interactions of light and m…
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Manipulation of the magnetization by external energies other than magnetic field, such as spin-polarized current1-4, electric voltage5,6 and circularly polarized light7-11 gives a paradigm shift in magnetic nanodevices. Magnetization control of ferromagnetic materials only by circularly polarized light has received increasing attention both as a fundamental probe of the interactions of light and magnetism but also for future high-density magnetic recording technologies. Here we show that for granular FePt films, designed for ultrahigh-density recording, the optical magnetic switching by circularly polarized light is an accumulative effect from multiple optical pulses. We further show that deterministic switching of high anisotropy materials by the combination of circularly polarized light and modest external magnetic fields, thus revealing a pathway towards technological implementation.
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Submitted 12 April, 2016;
originally announced April 2016.
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Correlation between the spin Hall angle and the structural phases of early 5d transition metals
Authors:
Jun Liu,
Tadakatsu Ohkubo,
Seiji Mitani,
Kazuhiro Hono,
Masamitsu Hayashi
Abstract:
We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X=Hf, Ta, W, Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall angle of the heavy metals. Transmission electron microscopy images show that all underlayers are amorphous-like when their thicknesses are small, however, crystalli…
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We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X=Hf, Ta, W, Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall angle of the heavy metals. Transmission electron microscopy images show that all underlayers are amorphous-like when their thicknesses are small, however, crystalline phases emerge as the thickness is increased for certain elements. We find that the heavy metal layer thickness dependence of the SMR reflects these changes in structure. The spin Hall angle largest |θ$_{SH}$| of Hf, Ta, W and Re (~0.11, 0.10, 0.23 and 0.07, respectively) is found when the dominant phase is amorphous-like. We find that the amorphous-like phase not only possesses large resistivity but also exhibits sizeable spin Hall conductivity, which both contribute to the emergence of the large spin Hall angle.
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Submitted 11 December, 2015;
originally announced December 2015.
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High spin polarization and large spin splitting in equiatomic quaternary CoFeCrAl Heusler alloy
Authors:
Lakhan Bainsla,
A. I. Mallick,
A. A. Coelho,
A. K. Nigam,
B. S. D. Ch. S. Varaprasad,
Y. K. Takahashi,
Aftab Alam,
K. G. Suresh,
K. Hono
Abstract:
In this paper, we investigate CoFeCrAl alloy by means of various experimental techniques and ab-initio calculations to look for half-metallic nature. The alloy is found to exist in the cubic Heusler structure, with presence of B2 ordering. Saturation magnetization (MS) value of about 2 Bohr magneton/f.u. is observed at 8 K under ambient pressure, which is in good agreement with the Slater-Pauling…
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In this paper, we investigate CoFeCrAl alloy by means of various experimental techniques and ab-initio calculations to look for half-metallic nature. The alloy is found to exist in the cubic Heusler structure, with presence of B2 ordering. Saturation magnetization (MS) value of about 2 Bohr magneton/f.u. is observed at 8 K under ambient pressure, which is in good agreement with the Slater-Pauling rule. MS values are found to be independent of pressure, which is a prerequisite for half-metals. The ab-initio electronic structure calculations predict half-metallic nature for the alloy with a spin slitting energy of 0.31 eV. Importantly, this system shows a high current spin polarization value of 0.67 [with error of 0.02], as deduced from the point contact Andreev reflection (PCAR) measurements. Linear dependence of electrical resistivity with temperature indicates the possibility of reasonably high spin polarization at elevated temperatures (~150 K) as well. All these suggest that CoFeCrAl is a promising material for the spintronic devices.
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Submitted 22 January, 2015;
originally announced January 2015.
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Spin gapless semiconducting behavior in equiatomic quaternary CoFeMnSi Heusler alloy
Authors:
Lakhan Bainsla,
A. I. Mallick,
M. Manivel Raja,
A. K. Nigam,
B. S. D. Ch. S. Varaprasad,
Y. K. Takahashi,
Aftab Alam,
K. G. Suresh,
K. Hono
Abstract:
Spin gapless semiconductors (SGS) form a new class of magnetic semiconductors, which has a band gap for one spin sub band and zero band gap for the other, and thus are useful for tunable spin transport based applications. In this paper, we report the first experimental evidence for spin gapless semiconducting behavior in CoFeMnSi Heusler alloy. Such a behavior is also confirmed by first principles…
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Spin gapless semiconductors (SGS) form a new class of magnetic semiconductors, which has a band gap for one spin sub band and zero band gap for the other, and thus are useful for tunable spin transport based applications. In this paper, we report the first experimental evidence for spin gapless semiconducting behavior in CoFeMnSi Heusler alloy. Such a behavior is also confirmed by first principles band structure calculations. The most stable configuration obtained by the theoretical calculation is verified by experiment. The alloy is found to crystallize in the cubic Heusler structure (LiMgPdSn type) with some amount of disorder and has a saturation magnetization of 3.7 Bohr's magneton/f.u.. and Curie temperature of 620 K. The saturation magnetization is found to follow the Slater-Pauling behavior, one of the prerequisites for SGS. Nearly temperature-independent carrier concentration and electrical conductivity is observed from 5 to 300 K. An anomalous Hall coefficient of 162 S/cm is obtained at 5 K. Point contact Andreev reflection data has yielded the current spin polarization value of 0.64, which is found to be robust against the structural disorder. All these properties are quite promising for the spintronic applications such as spin injection and can bridge a gap between the contrasting behavior of half-metallic ferromagnets and semiconductors.
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Submitted 1 October, 2014;
originally announced October 2014.
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High spin polarization in CoFeMnGe quaternary Heusler alloy
Authors:
Lakhan Bainsla,
K. G. Suresh,
A. K. Nigam,
M. Manivel Raja,
B. S. D. Ch. S. Varaprasad,
Y. K. Takahashi,
K. Hono
Abstract:
We report the structure, magnetic property and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to exist in the L21 structure with considerable amount of DO3 disorder. Thermal analysis result indicated the Curie temperature is about 711K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the…
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We report the structure, magnetic property and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to exist in the L21 structure with considerable amount of DO3 disorder. Thermal analysis result indicated the Curie temperature is about 711K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the Slater-Pauling curve. Current spin polarization of P = 0.70 {plus/minus}0.1 was deduced using point contact Andreev reflection (PCAR) measurements. Half-metallic trend in the resistivity has also been observed in the temperature range of 5 K to 300 K. Considering the high spin polarization and Curie temperature, this material appears to be promising for spintronic applications.
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Submitted 20 August, 2014; v1 submitted 11 August, 2014;
originally announced August 2014.
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A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance
Authors:
Zhenchao Wen,
Hiroaki Sukegawa,
Takao Furubayashi,
Jungwoo Koo,
Koichiro Inomata,
Seiji Mitani,
Jason Paul Hadorn,
Tadakatsu Ohkubo,
Kazuhiro Hono
Abstract:
An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs i…
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An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs incorporating this structure gave rise to the largest tunnel magnetoresistance for perpendicular MTJs using low damping Heusler alloys. The 4-fold-symmetry hexagonal Ru arises from an epitaxial growth with an unprecedentedly high crystal index, opening a unique pathway for the development of perpendicular anisotropy films of cubic and tetragonal ferromagnetic alloys.
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Submitted 16 August, 2014; v1 submitted 11 July, 2014;
originally announced July 2014.
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All-optical control of ferromagnetic thin films and nanostructures
Authors:
Charles-Henri Lambert,
Stephane Mangin,
B. S. D. Ch. S. Varaprasad,
Y. K. Takahashi,
M. Hehn,
M. Cinchetti,
G. Malinowski,
K. Hono,
Y. Fainman,
M. Aeschlimann,
Eric E. Fullerton
Abstract:
The interplay of light and magnetism has been a topic of interest since the original observations of Faraday and Kerr where magnetic materials affect the light polarization. While these effects have historically been exploited to use light as a probe of magnetic materials there is increasing research on using polarized light to alter or manipulate magnetism. For instance deterministic magnetic swi…
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The interplay of light and magnetism has been a topic of interest since the original observations of Faraday and Kerr where magnetic materials affect the light polarization. While these effects have historically been exploited to use light as a probe of magnetic materials there is increasing research on using polarized light to alter or manipulate magnetism. For instance deterministic magnetic switching without any applied magnetic fields using laser pulses of the circular polarized light has been observed for specific ferrimagnetic materials. Here we demonstrate, for the first time, optical control of ferromagnetic materials ranging from magnetic thin films to multilayers and even granular films being explored for ultra-high-density magnetic recording. Our finding shows that optical control of magnetic materials is a much more general phenomenon than previously assumed. These results challenge the current theoretical understanding and will have a major impact on data memory and storage industries via the integration of optical control of ferromagnetic bits.
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Submitted 4 March, 2014;
originally announced March 2014.
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Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As
Authors:
Pham Nam Hai,
Le Duc Anh,
Shyam Mohan,
Tsuyoshi Tamegai,
Masaya Kodzuka,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Masaaki Tanaka
Abstract:
We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-indu…
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We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
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Submitted 3 September, 2012;
originally announced September 2012.
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Large amplitude microwave emission and reduced nonlinear phase noise in Co2Fe(Ge0.5Ga0.5) Heusler alloy based pseudo spin valve nanopillars
Authors:
Jaivardhan Sinha,
Masamitsu Hayashi,
Yukiko K. Takahashi,
Tomohiro Taniguchi,
Maksim Drapeko,
Seiji Mitani,
Kazuhiro Hono
Abstract:
We have studied microwave emission from a current-perpendicular-to-plane pseudo spin valve nanopillars with Heusler alloy Co2Fe(Ga0.5Ge0.5) electrodes. Large emission amplitude exceeding 150 nV/Hz^0.5, partly owing to the large magnetoresistance, and narrow generation linewidth below 10 MHz are observed. We also find that the linewidth shows significant dependence on the applied field magnitude an…
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We have studied microwave emission from a current-perpendicular-to-plane pseudo spin valve nanopillars with Heusler alloy Co2Fe(Ga0.5Ge0.5) electrodes. Large emission amplitude exceeding 150 nV/Hz^0.5, partly owing to the large magnetoresistance, and narrow generation linewidth below 10 MHz are observed. We also find that the linewidth shows significant dependence on the applied field magnitude and its angle within the film plane. A minimum in the linewidth is observed when the slope of the frequency versus current becomes near zero. This agrees with theoretical prediction that takes into account non-linear phase noise as a source for linewidth broadening.
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Submitted 19 November, 2011;
originally announced November 2011.
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Designed Metamagnetism in CoMnGe_{1-x}P_{x}
Authors:
Zsolt Gercsi,
Kazuhiro Hono,
Karl G. Sandeman
Abstract:
We extend our previous theoretical study of Mn-based orthorhombic metamagnets to those that possess large nearest neighbour Mn-Mn separations (d1>3.22A). Based on our calculations, we design and synthesize a series of alloys, CoMnGe_{1-x}P_{x}, to experimentally demonstrate the validity of the model. Unusually, we predict and prepare several metamagnets from two ferromagnetic end-members, thus dem…
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We extend our previous theoretical study of Mn-based orthorhombic metamagnets to those that possess large nearest neighbour Mn-Mn separations (d1>3.22A). Based on our calculations, we design and synthesize a series of alloys, CoMnGe_{1-x}P_{x}, to experimentally demonstrate the validity of the model. Unusually, we predict and prepare several metamagnets from two ferromagnetic end-members, thus demonstrating a new example of how to vary crystal structure, within the Pnma symmetry group, to provide highly tunable metamagnetism.
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Submitted 11 January, 2011;
originally announced January 2011.
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Complementary use of TEM and APT for the investigation of steels nanostructured by severe plastic deformation
Authors:
Xavier Sauvage,
Williams Lefebvre,
Cécile Genevois,
S. Ohsaki,
Kazuhiro Hono
Abstract:
The properties of bulk nanostructured materials are often controlled by atomic scale features like segregation along defects or composition gradients. Here we discuss about the complimentary use of TEM and APT to obtain a full description of nanostructures. The advantages and limitations of both techniques are highlighted on the basis of experimental data collected in severely deformed steels wi…
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The properties of bulk nanostructured materials are often controlled by atomic scale features like segregation along defects or composition gradients. Here we discuss about the complimentary use of TEM and APT to obtain a full description of nanostructures. The advantages and limitations of both techniques are highlighted on the basis of experimental data collected in severely deformed steels with a special emphasis on carbon spatial distribution.
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Submitted 14 April, 2009;
originally announced April 2009.
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Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes
Authors:
K. Kodama,
T. Furubayashi,
H. Sukegawa,
T. M. Nakatani,
K. Inomata,
K. Hono
Abstract:
We report the current-perpendicular-to-plane giant magnetoresistance of a spin valve with Co2MnSi (CMS) Heusler alloy ferromagnetic electrodes. A multilayer stack of Cr/Ag/Cr/CMS/Cu/CMS/Fe25Co75/Ir28Mn72/Ru was deposited on a MgO (001) single crystal substrate. The bottom CMS layer was epitaxially grown on the Cr/Ag/Cr buffer layers and was ordered to the L21 structure after annealing at 673 K.…
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We report the current-perpendicular-to-plane giant magnetoresistance of a spin valve with Co2MnSi (CMS) Heusler alloy ferromagnetic electrodes. A multilayer stack of Cr/Ag/Cr/CMS/Cu/CMS/Fe25Co75/Ir28Mn72/Ru was deposited on a MgO (001) single crystal substrate. The bottom CMS layer was epitaxially grown on the Cr/Ag/Cr buffer layers and was ordered to the L21 structure after annealing at 673 K. The upper CMS layer was found to grow epitaxially on the Cu spacer layer despite the large lattice mismatch between Cu and CMS. The highest MR ratios of 8.6% and 30.7% for CPP-GMR were recorded at room temperature and 6 K, respectively. The high spin polarization of the epitaxial CMS layers is the most likely origin of the high MR ratio.
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Submitted 20 November, 2008;
originally announced November 2008.
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Interlayer exchange coupling in Co2FeAl0.5Si0.5/Cr/Co2FeAl0.5Si0.5 trilayers
Authors:
T. Furubayashi,
K. Kodama,
H. S. Goripati,
Y. K. Takahashi,
K. Inomata,
K. Hono
Abstract:
Interlayer exchange couplings were examined for Co2FeAl0.5Si0.5(CFAS)/Cr/CFAS trilayered films grown on MgO (001) single crystal and thermally oxidized Si substrates. The films were (001) epitaxial on MgO and (110) textured polycrystalline on SiO2. Strong exchange couplings were observed for the films with the 1.5 nm thick Cr spacer layer. A 90 degree coupling is dominant in the (001) epitaxial…
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Interlayer exchange couplings were examined for Co2FeAl0.5Si0.5(CFAS)/Cr/CFAS trilayered films grown on MgO (001) single crystal and thermally oxidized Si substrates. The films were (001) epitaxial on MgO and (110) textured polycrystalline on SiO2. Strong exchange couplings were observed for the films with the 1.5 nm thick Cr spacer layer. A 90 degree coupling is dominant in the (001) epitaxial film. In contrast, an antiparallel coupling exists in the polycrystalline one. The relationship of interlayer couplings with the structure is discussed.
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Submitted 20 November, 2008;
originally announced November 2008.
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Preparation of Monodisperse and Highly Coercive L10-FePt Nanoparticles Dispersible in Nonpolar Organic Solvents
Authors:
Shinpei Yamamoto,
Yasumasa Morimoto,
Yoshinari Tamada,
Y. K. Takahashi,
K. Hono,
Teruo Ono,
Mikio Takano
Abstract:
A method to prepare monodisperse and highly coercive L10-FePt nanoparticles which are dispersible in nonpolar organic solvents such as toluene, chloroform, and hexane was developed. By vigorously stirring the SiO2-coated L10-FePt nanoparticles synthesized by the SiO2-nanoreactor method (Appl. Phys. Lett. 2005, 87, 032503) in a mixture of an aqueous NaOH solution, chloroform, and hexadecyltrimeth…
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A method to prepare monodisperse and highly coercive L10-FePt nanoparticles which are dispersible in nonpolar organic solvents such as toluene, chloroform, and hexane was developed. By vigorously stirring the SiO2-coated L10-FePt nanoparticles synthesized by the SiO2-nanoreactor method (Appl. Phys. Lett. 2005, 87, 032503) in a mixture of an aqueous NaOH solution, chloroform, and hexadecyltrimethlyammonium bromide, the SiO2 coating was dissolved off and bare FePt nanoparticles could be extracted to the chloroform phase without degrading their magnetic properties. These particles showed a tendency to form a close packed lattice on slow drying of the chloroform-based solution. The present success may promote the practical application to ultra-high density magnetic recording and also may open the door to providing these particles with new physical and/or chemical functions.
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Submitted 4 July, 2006;
originally announced July 2006.
