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Growth of [001]-oriented polycrystalline Heusler alloy thin films using [001]-textured Ag buffer layer on thermally oxidized Si substrate for spintronics applications
Authors:
Dolly Taparia,
Taisuke T. Sasaki,
Tomoya Nakatani,
Hirofumi Suto,
Seiji Mitani,
Yuya Sakuraba
Abstract:
To utilize half-metallic Heusler alloys in practical spintronic devices, such as magnetic sensors and magnetic memories, the key is to realize highly textured and structurally ordered polycrystalline thin films. In this study, we fabricated polycrystalline Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy films deposited on a [001]-oriented Ag buffer layer, which was achieved by introducing N2 into Ar during t…
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To utilize half-metallic Heusler alloys in practical spintronic devices, such as magnetic sensors and magnetic memories, the key is to realize highly textured and structurally ordered polycrystalline thin films. In this study, we fabricated polycrystalline Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy films deposited on a [001]-oriented Ag buffer layer, which was achieved by introducing N2 into Ar during the sputtering process, on a thermally oxidized Si substrate. We obtained strongly [001]-oriented CFGG films with B2 ordering and a high saturation magnetization close to the theoretical value, which can provide highly spin-polarized electric and spin current sources in spintronic devices with industrial viability.
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Submitted 14 May, 2024;
originally announced May 2024.
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Enhancing atomic ordering, magnetic and transport properties of Mn2VGa Heusler alloy thin films toward negatively spin-polarized charge injection
Authors:
Z. H. Li,
H. Suto,
V. Barwal,
K. Masuda,
T. T. Sasaki,
Z. X. Chen,
H. Tajiri,
L. S. R. Kumara,
T. Koganezawa,
K. Amemiya,
S. Kokado,
K. Hono,
Y. Sakuraba
Abstract:
Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = -0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarizati…
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Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = -0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarization derived from a pseudo band gap in the majority spin channel. The Mn2+xV1-xGa films epitaxially grown on MgO(001) substrates exhibits variations of B2 and L21 order with the Mn concentration. A high-quality L21 ordered film was achieved in the Mn-rich composition (x = +0.2) with B2 and L21 order parameters of 0.97 and 0.86, respectively, and a saturation magnetization of 1.4 μB/f.u, which agrees the Slater-Pauling rule. Scanning transmission electron microscopy observations showed that B2 and L21 phases coexist in Mn-poor and stoichiometric films, while the L21 phase is dominant in the Mn-rich film with small amounts of Mn-V and Mn-Ga disorders, as revealed by laboratory and anomalous X-ray diffraction. Combined first-principles calculations and anisotropic magnetoresistance analysis confirm that the addition of excess Mn preserves the high spin polarization by suppressing the formation of detrimental antisites of V atoms occupying Mn sites. Therefore, the Mn-rich composition is promising for negatively spin-polarized charge injection in Mn2VGa-based spintronic applications.
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Submitted 10 May, 2024;
originally announced May 2024.
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Nonequilibrium magnonic thermal transport engineering
Authors:
Takamasa Hirai,
Toshiaki Morita,
Subrata Biswas,
Jun Uzuhashi,
Takashi Yagi,
Yuichiro Yamashita,
Varun Kushwaha Kumar,
Fuya Makino,
Rajkumar Modak,
Yuya Sakuraba,
Tadakatsu Ohkubo,
Rulei Guo,
Bin Xu,
Junichiro Shiomi,
Daichi Chiba,
Ken-ichi Uchida
Abstract:
Thermal conductivity, a fundamental parameter characterizing thermal transport in solids, is typically determined by electron and phonon transport. Although other transport properties including electrical conductivity and thermoelectric conversion coefficients have material-specific values, it is known that thermal conductivity can be modulated artificially via phonon engineering techniques. Here,…
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Thermal conductivity, a fundamental parameter characterizing thermal transport in solids, is typically determined by electron and phonon transport. Although other transport properties including electrical conductivity and thermoelectric conversion coefficients have material-specific values, it is known that thermal conductivity can be modulated artificially via phonon engineering techniques. Here, we demonstrate another way of artificially modulating the heat conduction in solids: magnonic thermal transport engineering. The time-domain thermoreflectance measurements using ferromagnetic metal/insulator junction systems reveal that the thermal conductivity of the ferromagnetic metals and interfacial thermal conductance vary significantly depending on the spatial distribution of nonequilibrium spin currents. Systematic measurements of the thermal transport properties with changing the boundary conditions for spin currents show that the observed thermal transport modulation stems from magnon origin. This observation unveils that magnons significantly contribute to the heat conduction even in ferromagnetic metals at room temperature, upsetting the conventional wisdom that the thermal conductivity mediated by magnons is very small in metals except at low temperatures. The magnonic thermal transport engineering offers a new principle and method for active thermal management.
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Submitted 6 March, 2024;
originally announced March 2024.
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Perspective on nanoscale magnetic sensors using giant anomalous Hall effect in topological magnetic materials for read head application in magnetic recording
Authors:
Tomoya Nakatani,
Prabhanjan D. Kulkarni,
Hirofumi Suto,
Keisuke Masuda,
Hitoshi Iwasaki,
Yuya Sakuraba
Abstract:
Recent advances in the study of materials with topological electronic band structures have revealed magnetic materials exhibiting giant anomalous Hall effects (AHE). The giant AHE has not only attracted the research interest in its mechanism but also opened up the possibility of practical application in magnetic sensors. In this article, we describe simulation-based investigations of AHE magnetic…
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Recent advances in the study of materials with topological electronic band structures have revealed magnetic materials exhibiting giant anomalous Hall effects (AHE). The giant AHE has not only attracted the research interest in its mechanism but also opened up the possibility of practical application in magnetic sensors. In this article, we describe simulation-based investigations of AHE magnetic sensors for the applications to read head sensors (readers) of hard disk drives. With the shrinking of magnetic recording patterns, the reader technology, which currently uses multilayer-based tunnel magnetoresistance (TMR) devices, is associated with fundamental challenges, such as insufficient spatial resolution and signal-to-noise ratio (SNR) in sensors with dimensions below 20 nm. The structure of an AHE-based device composed of a single ferromagnetic material is advantageous for magnetic sensors with nanoscale dimensions. We found that AHE readers using topological ferromagnets with giant AHE, such as Co2MnGa, can achieve a higher SNR than current TMR readers. The higher SNR originates from the large output signal of the giant AHE as well as from the reduced thermal magnetic noise, which is the dominant noise in TMR readers. We highlight a major challenge in the development of AHE readers: the reduction in the output signal due to the shunting of the bias current and the leakage of the Hall voltage through the soft magnetic shields surrounding the AHE reader. We propose reader structures that overcome this challenge. Finally, we discuss the scope for future research to realize AHE readers.
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Submitted 16 January, 2024; v1 submitted 26 December, 2023;
originally announced December 2023.
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Ultra-low-current-density single-layer magnetic Weyl semimetal spin Hall nano-oscillators
Authors:
Lakhan Bainsla,
Yuya Sakuraba,
Avinash Kumar Chaurasiya,
Akash Kumar,
Keisuke Masuda,
Ahmad A. Awad,
Nilamani Behera,
Roman Khymyn,
Saroj Prasad Dash,
Johan Åkerman
Abstract:
Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall…
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Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall conductivity, $σ_{\rm xy}=1.35\times10^{5}$ $Ω^{-1} m^{-1}$ and the anomalous Hall angle, $θ_{\rm H}=15.8\%$, both comparable to bulk values. We observe a dramatic crystalline orientation dependence of the Gilbert damping constant of a factor of two and a giant intrinsic spin Hall conductivity, $\mathit{σ_{\rm SHC}}=(6.08\pm 0.02)\times 10^{5}$ ($\hbar/2e$) $Ω^{-1} m^{-1}$, an order of magnitude higher than literature values of multilayer Co$_{\rm 2}$MnGa stacks [1-3] and single-layer Ni, Co, Fe [4], and Ni$_{\rm 80}$Fe$_{\rm 20}$~[4,5]. As a consequence, spin-orbit-torque driven auto-oscillations of a 30 nm thick magnetic film are observed for the first time, at an ultralow threshold current density of $J_{th}=6.2\times10^{11}$ $Am^{-2}$. Theoretical calculations of the intrinsic spin Hall conductivity, originating from a strong Berry curvature, corroborate the results and yield values comparable to the experiment. Our results open up for the design of spintronic devices based on single layers of magnetic topological quantum materials.
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Submitted 19 April, 2024; v1 submitted 14 November, 2023;
originally announced November 2023.
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Detailed and high-throughput measurement of composition dependence of magnetoresistance and spin-transfer torque using a composition-gradient film: application to Co$_{x}$Fe$_{1-x}$ (0 $\le$ $\textit{x}$ $\le$ 1) system
Authors:
Vineet Barwal,
Hirofumi Suto,
Tomohiro Taniguchi,
Yuya Sakuraba
Abstract:
We develop a high-throughput method for measuring the composition dependence of magnetoresistance (MR) and spin-transfer-torque (STT) effects in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices and report its application to the CoFe system. The method is based on the use of composition-gradient films deposited by combinatorial sputtering. This structure allows the fabricati…
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We develop a high-throughput method for measuring the composition dependence of magnetoresistance (MR) and spin-transfer-torque (STT) effects in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices and report its application to the CoFe system. The method is based on the use of composition-gradient films deposited by combinatorial sputtering. This structure allows the fabrication of devices with different compositions on a single substrate, drastically enhancing the throughput in investigating composition dependence. We fabricated CPP-GMR devices on a single GMR film consisting of a Co$_{x}$Fe$_{1-x}$ (0 $\le$ $\textit{x}$ $\le$ 1) composition-gradient layer, a Cu spacer layer, and a NiFe layer. The MR ratio obtained from resistance-field measurements exhibited the maximum in the broad Co concentration range of 0.3 $\le$ $\textit{x}$ $\le$ 0.65. In addition, the STT efficiency was estimated from the current to induce magnetization reversal of the NiFe layer by spin injection from the Co$_{x}$Fe$_{1-x}$ layer. The STT efficiency was also the highest around the same Co concentration range as for the MR ratio, and this correlation was theoretically explained by the change in the spin polarization of the Co$_{x}$Fe$_{1-x}$ layer. The results revealed the Co$_{x}$Fe$_{1-x}$ composition range suitable for spintronic applications, demonstrating the advantages of the developed method.
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Submitted 18 October, 2023;
originally announced October 2023.
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Seebeck-driven transverse thermoelectric generation in magnetic hybrid bulk materials
Authors:
Weinan Zhou,
Asuka Miura,
Takamasa Hirai,
Yuya Sakuraba,
Ken-ichi Uchida
Abstract:
The Seebeck-driven transverse thermoelectric generation in magnetic/thermoelectric hybrid materials (STTG) has been investigated in all-bulk hybrid materials. The transverse thermopower in a ferromagnetic Co$_2$MnGa/thermoelectric $n$-type Si hybrid bulk material with the adjusted dimensions reaches 16.0 $μ$V/K at room temperature with the aid of the STTG contribution, which is much larger than th…
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The Seebeck-driven transverse thermoelectric generation in magnetic/thermoelectric hybrid materials (STTG) has been investigated in all-bulk hybrid materials. The transverse thermopower in a ferromagnetic Co$_2$MnGa/thermoelectric $n$-type Si hybrid bulk material with the adjusted dimensions reaches 16.0 $μ$V/K at room temperature with the aid of the STTG contribution, which is much larger than the anomalous Nernst coefficient of the Co$_2$MnGa slab (6.8 $μ$V/K). Although this transverse thermopower is smaller than the value for previously reported thin-film-based hybrid materials, the hybrid bulk materials exhibit much larger electrical power owing to their small internal resistance. This demonstration confirms the validity of STTG in bulk materials and clarifies its potential as a thermal energy harvester.
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Submitted 24 January, 2023;
originally announced January 2023.
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Direct electrical probing of anomalous Nernst conductivity
Authors:
Weinan Zhou,
Asuka Miura,
Yuya Sakuraba,
Ken-ichi Uchida
Abstract:
Despite the usefulness of the anomalous Nernst conductivity ($α^{A}_{xy}$) for studying electronic band structures and exploring magnetic materials with large transverse thermopower, there has not been a straightforward way to obtain $α^{A}_{xy}$ in the experiment. Here, we propose a simple and versatile method enabling direct electrical probing of $α^{A}_{xy}$, which is realized by creating a clo…
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Despite the usefulness of the anomalous Nernst conductivity ($α^{A}_{xy}$) for studying electronic band structures and exploring magnetic materials with large transverse thermopower, there has not been a straightforward way to obtain $α^{A}_{xy}$ in the experiment. Here, we propose a simple and versatile method enabling direct electrical probing of $α^{A}_{xy}$, which is realized by creating a closed circuit consisting of a target magnetic material and a non-magnetic conductor. This method was experimentally demonstrated on a thin film of magnetic Weyl semimetal Co$_{2}$MnGa, where the closed circuit was formed simply by connecting both ends of the Co$_{2}$MnGa film with a Au wire. A good approximation of $α^{A}_{xy}$ was obtained in a wide temperature range, validating the proposed method and exhibiting its potential for aiding the further development of topological materials science and transverse thermoelectrics.
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Submitted 29 June, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Seebeck-driven transverse thermoelectric generation in on-chip devices
Authors:
Weinan Zhou,
Takamasa Hirai,
Ken-ichi Uchida,
Yuya Sakuraba
Abstract:
An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here, we improve on the previously used sample structure and achieve large transverse thermopower over 40 $μ$V K$^{-1}$ due to STTG in on-chip devices. We deposited po…
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An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here, we improve on the previously used sample structure and achieve large transverse thermopower over 40 $μ$V K$^{-1}$ due to STTG in on-chip devices. We deposited polycrystalline Fe-Ga alloy films directly on n-type Si substrates, where Fe-Ga and Si serve as the magnetic and thermoelectric materials, respectively. Using microfabrication, contact holes were created through the SiO$_{x}$ layer at the top of Si to electrically connect the Fe-Ga film with the Si substrate. These thin devices with simple structure clearly exhibited enhancement of transverse thermopower due to STTG, and the obtained values agreed well with the estimation over a wide range of the size ratio between the Fe-Ga film and the Si substrate.
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Submitted 2 June, 2022; v1 submitted 22 March, 2022;
originally announced March 2022.
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Sm-Co-based amorphous alloy films for zero-field operation of transverse thermoelectric generation
Authors:
Rajkumar Modak,
Yuya Sakuraba,
Takamasa Hirai,
Takashi Yagi,
Hossein Sepehri-Amin,
Weinan Zhou,
Hiroto Masuda,
Takeshi Seki,
Koki Takanashi,
Tadakatsu Ohkubo,
Ken-ichi Uchida
Abstract:
Transverse thermoelectric generation using magnetic materials is essential to develop active thermal engineering technologies, for which the improvements of not only the thermoelectric output but also applicability and versatility are required. In this study, using combinatorial material science and lock-in thermography technique, we have systematically investigated the transverse thermoelectric p…
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Transverse thermoelectric generation using magnetic materials is essential to develop active thermal engineering technologies, for which the improvements of not only the thermoelectric output but also applicability and versatility are required. In this study, using combinatorial material science and lock-in thermography technique, we have systematically investigated the transverse thermoelectric performance of Sm-Co-based alloy films. The high-throughput material investigation revealed the best Sm-Co-based alloys with the large anomalous Nernst effect (ANE) as well as the anomalous Ettingshausen effect (AEE). In addition to ANE/AEE, we discovered unique and superior material properties in these alloys: the amorphous structure, low thermal conductivity, and large in-plane coercivity and remanent magnetization. These properties make it advantageous over conventional materials to realize heat flux sensing applications based on ANE, as our Sm-Co-based films can generate thermoelectric output without an external magnetic field. Importantly, the amorphous nature enables the fabrication of these films on various substrates including flexible sheets, making the large-scale and low-cost manufacturing easier. Our demonstration will provide a pathway to develop flexible transverse thermoelectric devices for smart thermal management.
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Submitted 18 November, 2022; v1 submitted 21 March, 2022;
originally announced March 2022.
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Deposition temperature dependence of thermo-spin and magneto-thermoelectric conversion in Co$_2$MnGa films on Y$_3$Fe$_5$O$_{12}$ and Gd$_3$Ga$_5$O$_{12}$
Authors:
Hayato Mizuno,
Rajkumar Modak,
Takamasa Hirai,
Atsushi Takahagi,
Yuya Sakuraba,
Ryo Iguchi,
Ken-ichi Uchida
Abstract:
We have characterized Co$_2$MnGa (CMG) Heusler alloy films grown on Y$_3$Fe$_5$O$_{12}$ (YIG) and Gd$_3$Ga$_5$O$_{12}$ (GGG) substrates at different deposition temperatures and investigated thermo-spin and magneto-thermoelectric conversion properties by means of a lock-in thermography technique. X-ray diffraction, magnetization, and electrical transport measurements show that the deposition at hig…
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We have characterized Co$_2$MnGa (CMG) Heusler alloy films grown on Y$_3$Fe$_5$O$_{12}$ (YIG) and Gd$_3$Ga$_5$O$_{12}$ (GGG) substrates at different deposition temperatures and investigated thermo-spin and magneto-thermoelectric conversion properties by means of a lock-in thermography technique. X-ray diffraction, magnetization, and electrical transport measurements show that the deposition at high substrate temperatures induces the crystallized structures of CMG while the resistivity of the CMG films on YIG (GGG) prepared at and above 500 °C (550 °C) becomes too high to measure the thermo-spin and magneto-thermoelectric effects due to large roughness, highlighting the difficulty of fabricating highly ordered continuous CMG films on garnet structures. Our lock-in thermography measurements show that the deposition at high substrate temperatures results in an increase in the current-induced temperature change for CMG/GGG and a decrease in that for CMG/YIG. The former indicates the enhancement of the anomalous Ettingshausen effect in CMG through crystallization. The latter can be explained by the superposition of the anomalous Ettingshausen effect and the spin Peltier effect induced by the positive (negative) charge-to-spin conversion for the amorphous (crystallized) CMG films. These results provide a hint to construct spin-caloritronic devices based on Heusler alloys.
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Submitted 17 May, 2022; v1 submitted 20 March, 2022;
originally announced March 2022.
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Phase-transition-induced giant Thomson effect for thermoelectric cooling
Authors:
Rajkumar Modak,
Masayuki Murata,
Dazhi Hou,
Asuka Miura,
Ryo Iguchi,
Bin Xu,
Rulei Guo,
Junichiro Shiomi,
Yuya Sakuraba,
Ken-ichi Uchida
Abstract:
The Seebeck and Peltier effects have been widely studied and used in various thermoelectric technologies, including thermal energy harvesting and solid-state heat pumps. However, basic and applied studies on the Thomson effect, another fundamental thermoelectric effect in conductors, are limited despite the fact that the Thomson effect allows electronic cooling through the application of a tempera…
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The Seebeck and Peltier effects have been widely studied and used in various thermoelectric technologies, including thermal energy harvesting and solid-state heat pumps. However, basic and applied studies on the Thomson effect, another fundamental thermoelectric effect in conductors, are limited despite the fact that the Thomson effect allows electronic cooling through the application of a temperature gradient bias rather than the construction of junction structures. In this article, we report the observation of a giant Thomson effect that appears owing to magnetic phase transitions. The Thomson coefficient of FeRh-based alloys reaches large values approaching $-$1,000 $μ$VK$^{-1}$ around room temperature because of the steep temperature dependence of the Seebeck coefficient associated with the antiferromagnetic-ferromagnetic phase transition. The Thomson coefficient is several orders of magnitude larger than the Seebeck coefficient of the alloys. Using the active thermography technique, we demonstrate that the Thomson cooling can be much larger than Joule heating in the same material even in a nearly steady state. The operation temperature of the giant Thomson effect in the FeRh-based alloys can be tuned over a wide range by applying an external magnetic field or by slightly changing the composition. Our findings provide a new direction in the materials science of thermoelectrics and pave the way for thermal management applications using the Thomson effect.
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Submitted 1 February, 2022; v1 submitted 4 November, 2021;
originally announced November 2021.
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Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface
Authors:
Y. Fujita,
Y. Miura,
T. Sasaki,
T. Nakatani,
K. Hono,
Y. Sakuraba
Abstract:
We study spin-scattering asymmetry at the interface of two ferromagnets (FMs) based on a half-metallic Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si (CFMS)/CoFe interface. First-principles ballistic transport calculations based on Landauer formula for (001)-CoFe/CFMS/CoFe indicate strong spin-dependent conductance at the CFMS/CoFe interface, suggesting a large interface spin-scattering asymmetry coefficient (…
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We study spin-scattering asymmetry at the interface of two ferromagnets (FMs) based on a half-metallic Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si (CFMS)/CoFe interface. First-principles ballistic transport calculations based on Landauer formula for (001)-CoFe/CFMS/CoFe indicate strong spin-dependent conductance at the CFMS/CoFe interface, suggesting a large interface spin-scattering asymmetry coefficient ($γ$). Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valve (PSV) devices involving CoFe/CFMS/Ag/CFMS/CoFe structures exhibit an enhancement in MR output owing to the formation of the CFMS/CoFe interface at room temperature (RT). This is well reproduced qualitatively by a simulation based on a generalized two-current series-resistor model with considering the presence of $γ$ at the CFMS/CoFe interface, half-metallicity of CFMS, and combinations of terminated atoms at the interfaces in the CPP-GMR PSV structure. We show direct evidence for a large $γ$ at a half-metallic FM/FM interface and its impact on CPP-GMR effect even at RT.
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Submitted 10 October, 2021; v1 submitted 4 August, 2021;
originally announced August 2021.
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Origin of negative anomalous Nernst thermopower in Mn-Ga ordered alloys
Authors:
Weinan Zhou,
Keisuke Masuda,
Yuya Sakuraba
Abstract:
The negative sign of the anomalous Nernst thermopower ($S_\text{ANE}$) observed in Mn-Ga ordered alloys is an attractive property for thermoelectric applications exploiting the anomalous Nernst effect (ANE); however, its origin has not been clarified. In this study, to gain insight into the negative $S_\text{ANE}$, we prepared epitaxial thin films of Mn$_{x}$Ga$_{100-x}$ with $x$ ranging from 56.2…
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The negative sign of the anomalous Nernst thermopower ($S_\text{ANE}$) observed in Mn-Ga ordered alloys is an attractive property for thermoelectric applications exploiting the anomalous Nernst effect (ANE); however, its origin has not been clarified. In this study, to gain insight into the negative $S_\text{ANE}$, we prepared epitaxial thin films of Mn$_{x}$Ga$_{100-x}$ with $x$ ranging from 56.2 to 71.7, and systematically investigated the structural, magnetic, and transport properties including the anomalous Hall effect (AHE) and the ANE. The measured $S_\text{ANE}$ is negative for all samples and shows close to one order of magnitude difference among different compositions. Together with the measured transport properties, we were able to separate the two different contributions of the ANE, i.e., one originating from the transverse thermoelectric coefficient ($α_{xy}$), and the other one originating from the AHE acting on the longitudinal carrier flow induced by the Seebeck effect. Both contributions are found to be negative for all samples, while the experimentally obtained negative $α_{xy}$ exhibits a monotonic increase towards zero with increasing $x$, which is consistent with the tendency indicated by first-principles calculations. Our results show that the large difference in the negative $S_\text{ANE}$ is mostly attributed to $α_{xy}$, and thus shed light on further enhancement of the ANE in Mn-based ordered alloys.
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Submitted 17 February, 2021;
originally announced February 2021.
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Combinatorial tuning of electronic structure and thermoelectric properties in Co$_2$MnAl$_{1-x}$Si$_x$ Weyl semimetals
Authors:
Rajkumar Modak,
Kazuki Goto,
Shigenori Ueda,
Yoshio Miura,
Ken-ichi Uchida,
Yuya Sakuraba
Abstract:
A tuning of Fermi level (E$_F$) near Weyl points is one of the promising approaches to realize large anomalous Nernst effect (ANE). In this work, we introduce an efficient approach to tune E$_F$ for the Co$_2$MnAl Weyl semimetal through a layer-by-layer combinatorial deposition of Co$_2$MnAl$_{1-x}$Si$_x$ (CMAS) thin film. A single-crystalline composition-spread film with x varied from 0 to 1 was…
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A tuning of Fermi level (E$_F$) near Weyl points is one of the promising approaches to realize large anomalous Nernst effect (ANE). In this work, we introduce an efficient approach to tune E$_F$ for the Co$_2$MnAl Weyl semimetal through a layer-by-layer combinatorial deposition of Co$_2$MnAl$_{1-x}$Si$_x$ (CMAS) thin film. A single-crystalline composition-spread film with x varied from 0 to 1 was fabricated. The structural characterization reveals the formation of single-phase CMAS alloy throughout the composition range with a gradual improvement of L2$_1$ order with x similar to the co-sputtered single layered film, which validates the present fabrication technique. Hard X-ray photoemission spectroscopy for the CMAS composition-spread film directly confirmed the rigid band-like E$_F$ shift of approximately 0.40 eV towards the composition gradient direction from x = 0 to 1. The anomalous Ettingshausen effect (AEE), the reciprocal of ANE, has been measured for whole x range using a single strip along the composition gradient using the lock-in thermography technique. The similarity of the x dependence of observed AEE and ANE signals clearly demonstrates that the AEE measurement on the composition spread film is an effective approach to investigate the composition dependence of ANE of Weyl semimetal thin films and realize the highest performance without fabricating several films, which will accelerate the research for ANE-based energy harvesting
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Submitted 11 March, 2021; v1 submitted 12 February, 2021;
originally announced February 2021.
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Transverse thermoelectric generation using magnetic materials
Authors:
Ken-ichi Uchida,
Weinan Zhou,
Yuya Sakuraba
Abstract:
The transverse thermoelectric effect refers to the conversion of a temperature gradient into a transverse charge current, or vice versa, which appears in a conductor under a magnetic field or in a magnetic material with spontaneous magnetization. Among such phenomena, the anomalous Nernst effect in magnetic materials has been receiving increased attention from the viewpoints of fundamental physics…
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The transverse thermoelectric effect refers to the conversion of a temperature gradient into a transverse charge current, or vice versa, which appears in a conductor under a magnetic field or in a magnetic material with spontaneous magnetization. Among such phenomena, the anomalous Nernst effect in magnetic materials has been receiving increased attention from the viewpoints of fundamental physics and thermoelectric applications owing to the rapid development of spin caloritronics and topological materials science. In this research trend, a conceptually different transverse thermoelectric conversion phenomenon appearing in thermoelectric/magnetic hybrid materials has been demonstrated, enabling the generation of a large transverse thermopower. Here, we review the recent progress in fundamental and applied studies on the transverse thermoelectric generation using magnetic materials. We anticipate that this perspective will further stimulate research activities on the transverse thermoelectric generation and lead to the development of next-generation thermal energy harvesting and heat-flux sensing technologies.
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Submitted 8 April, 2021; v1 submitted 8 February, 2021;
originally announced February 2021.
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Phenomenological analysis of transverse thermoelectric generation and cooling performance in magnetic/thermoelectric hybrid systems
Authors:
Kaoru Yamamoto,
Ryo Iguchi,
Asuka Miura,
Weinan Zhou,
Yuya Sakuraba,
Yoshio Miura,
Ken-ichi Uchida
Abstract:
We phenomenologically calculate the performance of the recently-observed Seebeck-driven transverse thermoelectric generation (STTG) for various systems in terms of the thermopower, power factor, and figure of merit to demonstrate the usefulness of STTG. The STTG system consists of a closed circuit comprising thermoelectric and magnetic materials which exhibit the Seebeck and anomalous Hall effects…
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We phenomenologically calculate the performance of the recently-observed Seebeck-driven transverse thermoelectric generation (STTG) for various systems in terms of the thermopower, power factor, and figure of merit to demonstrate the usefulness of STTG. The STTG system consists of a closed circuit comprising thermoelectric and magnetic materials which exhibit the Seebeck and anomalous Hall effects, respectively. When a temperature gradient is applied to the hybrid system, the Seebeck effect in the thermoelectric material layer generates a longitudinal charge current in the closed circuit and the charge current subsequently drives the anomalous Hall effect in the magnetic material layer. The anomalous Hall voltage driven by the Seebeck effect has a similar symmetry to the transverse thermoelectric conversion based on the anomalous Nernst effect. We find that the thermoelectric properties of STTG can be much better than those of the anomalous Nernst effect by increasing the Seebeck coefficient and anomalous Hall angle of the thermoelectric and magnetic materials, respectively, as well as by optimizing their dimensions. We also formulate the electronic cooling performance in the STTG system, confirming the reciprocal relation for the hybrid transverse thermoelectric conversion.
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Submitted 5 July, 2021; v1 submitted 21 January, 2021;
originally announced January 2021.
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Structural insight using anomalous XRD into Mn2CoAl Heusler alloy films grown by magnetron sputtering, IBAS and MBE techniques
Authors:
Hiroo Tajiri,
Loku Singgappulige Rosantha Kumara,
Yuya Sakuraba,
Zixi Chen,
Jian Wang,
Weinan Zhou,
Kushwaha Varun,
Kenji Ueda,
Shinya Yamada,
Kohei Hamaya,
Kazuhiro Hono
Abstract:
Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods: ultra-high vacuum magnetron spattering, Ar-ion beam assisted sputtering, and molecular beam epitaxy, are investigated by comparing their electric transport properties, microstructures and atomic-level structures. Of the samples, the Mn2CoAl thin film grown by MBE consists of Mn-…
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Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods: ultra-high vacuum magnetron spattering, Ar-ion beam assisted sputtering, and molecular beam epitaxy, are investigated by comparing their electric transport properties, microstructures and atomic-level structures. Of the samples, the Mn2CoAl thin film grown by MBE consists of Mn- and Co-rich phases, the structures of which are determined to be the L21B-type and disordered L21-type, respectively, according to anomalous XRD analysis. None of them forms the XA-type structure expected for SGS Heusler alloy, although they all show SGS characteristics. We suggest, to validate SGS characteristics, it is necessary to extract not only magnetic and electric transport properties but also information about microstructures and atomic-scale structures of the films including defects such as atomic swap.
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Submitted 22 December, 2020;
originally announced December 2020.
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Anomalous Hall and Nernst effects in ferrimagnetic Mn$_4$N films: possible interpretation and prospect for enhancement
Authors:
Shinji Isogami,
Keisuke Masuda,
Yoshio Miura,
Rajamanickam Nagalingam,
Yuya Sakuraba
Abstract:
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We experimentally and theoretically investigated the ANE and anomalous Hall effect in sputter-deposited Mn$_4$N films. It was revealed that the observed negative anomalous Hal…
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Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We experimentally and theoretically investigated the ANE and anomalous Hall effect in sputter-deposited Mn$_4$N films. It was revealed that the observed negative anomalous Hall conductivity ($σ_{xy}$) could be explained by two different coexisting magnetic structures, that is, a dominant magnetic structure with high $K_{\rm u}$ contaminated by another structure with negligible $K_{\rm u}$ owing to an imperfect degree of order of nitrogen. The observed transverse thermoelectric power ($S_{\rm ANE}$) of $+0.5\, μ{\rm V/K}$ at $300\, {\rm K}$ gave a transverse thermoelectric coefficient ($α_{xy}$) of $+0.34\, {\rm A/(m \cdot K)}$, which was smaller than the value predicted from first-principles calculation. The interpretation for $α_{xy}$ based on the first-principles calculations led us to conclude that the realization of single magnetic structure with high $K_{\rm u}$ and optimal adjustment of the Fermi level are promising approaches to enhance $S_{\rm ANE}$ in Mn$_4$N through the sign reversal of $σ_{xy}$ and the enlargement of $α_{xy}$ up to a theoretical value of $1.77\, {\rm A/(m \cdot K)}$.
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Submitted 14 May, 2021; v1 submitted 4 December, 2020;
originally announced December 2020.
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Above-room-temperature giant thermal conductivity switching in spintronic multilayer
Authors:
Hiroyasu Nakayama,
Bin Xu,
Sotaro Iwamoto,
Kaoru Yamamoto,
Ryo Iguchi,
Asuka Miura,
Takamasa Hirai,
Yoshio Miura,
Yuya Sakuraba,
Junichiro Shiomi,
Ken-ichi Uchida
Abstract:
Thermal switching provides an effective way for active heat flow control, which has recently attracted increasing attention in terms of nanoscale thermal management technologies. In magnetic and spintronic materials, the thermal conductivity depends on the magnetization configuration: this is the magneto-thermal resistance effect. Here we show that an epitaxial Cu/Co$_{50}$Fe$_{50}$ multilayer fil…
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Thermal switching provides an effective way for active heat flow control, which has recently attracted increasing attention in terms of nanoscale thermal management technologies. In magnetic and spintronic materials, the thermal conductivity depends on the magnetization configuration: this is the magneto-thermal resistance effect. Here we show that an epitaxial Cu/Co$_{50}$Fe$_{50}$ multilayer film exhibits giant magnetic-field-induced modulation of the cross-plane thermal conductivity. The magneto-thermal resistance ratio for the Cu/Co$_{50}$Fe$_{50}$ multilayer reaches 150% at room temperature, which is much larger than the previous record high. Although the ratio decreases with increasing the temperature, the giant magneto-thermal resistance effect of ~100% still appears up to 400 K. The magnetic field dependence of the thermal conductivity of the Cu/Co$_{50}$Fe$_{50}$ multilayer was observed to be about twice greater than that of the cross-plane electrical conductivity. The observation of the giant magneto-thermal resistance effect clarifies a potential of spintronic multilayers as thermal switching devices.
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Submitted 30 November, 2020;
originally announced November 2020.
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Voltage-controlled magnetic anisotropy under the electronic structure modulation in quantum wells
Authors:
Qingyi Xiang,
Yoshio Miura,
Muftah Al-Mahdawi,
Thomas Scheike,
Xiandong Xu,
Yuya Sakuraba,
Shinya Kasai,
Zhenchao Wen,
Hiroaki Sukegawa,
Seiji Mitani,
Kazuhiro Hono
Abstract:
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ…
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Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ with an even number of Fe atomic layers, we observed a novel A-shaped VCMA curve for a particular QW state, where magnetic anisotropy energy (MAE) reaches a local maximum at zero bias and reduces when applying both positive and negative bias, i.e., a novel bi-polar VCMA effect. Our ab initio calculations demonstrate that the QW states give an additional contribution to perpendicular magnetic anisotropy (PMA), which can explain not only the A-shaped VCMA but also the Fe-layer-number parity dependence of VCMA. The present study suggests that the QW-modulated VCMA should open a new pathway to design VCMA-assisted MRAM.
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Submitted 13 November, 2020;
originally announced November 2020.
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Enhancement of anomalous Nernst effect in Ni/Pt superlattice
Authors:
T. Seki,
Y. Sakuraba,
K. Masuda,
A. Miura,
M. Tsujikawa,
K. Uchida,
T. Kubota,
Y. Miura,
M. Shirai,
K. Takanashi
Abstract:
We report an enhancement of the anomalous Nernst effect (ANE) in Ni/Pt (001) epitaxial superlattices. The transport and magneto-thermoelectric properties were investigated for the Ni/Pt superlattices with various Ni layer thicknesses (${\it t}$). The anomalous Nernst coefficient was increased up to more than 1 $μ$V K$^{-1}$ for 2.0 nm ${\leq}$ ${\it t}$ ${\leq}$ 4.0 nm, which was the remarkable en…
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We report an enhancement of the anomalous Nernst effect (ANE) in Ni/Pt (001) epitaxial superlattices. The transport and magneto-thermoelectric properties were investigated for the Ni/Pt superlattices with various Ni layer thicknesses (${\it t}$). The anomalous Nernst coefficient was increased up to more than 1 $μ$V K$^{-1}$ for 2.0 nm ${\leq}$ ${\it t}$ ${\leq}$ 4.0 nm, which was the remarkable enhancement compared to the bulk Ni. It has been found that the large transverse Peltier coefficient ($α$$_{xy}$), reaching $α$$_{xy}$ = 4.8 A K$^{-1}$ m$^{-1}$ for ${\it t}$ = 4.0 nm, plays a prime role for the enhanced ANE of the Ni/Pt (001) superlattices.
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Submitted 23 September, 2020;
originally announced September 2020.
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Spin-polarized Weyl cones and gigantic anomalous Nernst effect in ferromagnetic Heusler films
Authors:
Kazuki Sumida,
Yuya Sakuraba,
Keisuke Masuda,
Takashi Kono,
Masaaki Kakoki,
Kazuki Goto,
Weinan Zhou,
Koji Miyamoto,
Yoshio Miura,
Taichi Okuda,
Akio Kimura
Abstract:
Weyl semimetals are characterized by the presence of massless band dispersion in momentum space. When a Weyl semimetal meets magnetism, large anomalous transport properties emerge as a consequence of its topological nature. Here, using $in-situ$ spin- and angle-resolved photoelectron spectroscopy combined with $ab\ initio$ calculations, we visualize the spin-polarized Weyl cone and flat-band surfa…
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Weyl semimetals are characterized by the presence of massless band dispersion in momentum space. When a Weyl semimetal meets magnetism, large anomalous transport properties emerge as a consequence of its topological nature. Here, using $in-situ$ spin- and angle-resolved photoelectron spectroscopy combined with $ab\ initio$ calculations, we visualize the spin-polarized Weyl cone and flat-band surface states of ferromagnetic Co$_2$MnGa films with full remanent magnetization. We demonstrate that the anomalous Hall and Nernst conductivities systematically grow when the magnetization-induced massive Weyl cone at a Lifshitz quantum critical point approaches the Fermi energy, until a high anomalous Nernst thermopower of $\sim 6.2$ $\rm μV K^{-1}$ is realized at room temperature. Given this topological quantum state and full remanent magnetization, Co$_2$MnGa films are promising for realizing high efficiency heat flux and magnetic field sensing devices operable at room temperature and zero-field.
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Submitted 8 December, 2020; v1 submitted 28 June, 2020;
originally announced June 2020.
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Heat flux sensing by anomalous Nernst effect in Fe-Al thin films on a flexible substrate
Authors:
W. Zhou,
Y. Sakuraba
Abstract:
We performed a numerical analysis of the material parameters required for realizing a heat flux sensor exploiting the anomalous Nernst effect (ANE). The results showed the importance of high thermopower of ANE ($S_{\text{ANE}}$) and small saturation magnetization. This motivated us to investigate the effect of Al substitution of Fe on ANE and found $S_{\text{ANE}} =$ 3.4 $μ$V/K in Fe$_{81}$Al…
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We performed a numerical analysis of the material parameters required for realizing a heat flux sensor exploiting the anomalous Nernst effect (ANE). The results showed the importance of high thermopower of ANE ($S_{\text{ANE}}$) and small saturation magnetization. This motivated us to investigate the effect of Al substitution of Fe on ANE and found $S_{\text{ANE}} =$ 3.4 $μ$V/K in Fe$_{81}$Al$_{19}$ because of the dominant intrinsic mechanism. Using this material, we made a prototype ANE-based heat flux sensor on a thin flexible polyimide sheet and demonstrated accurate sensing with it. This study gives important information for enhancing sensor sensitivity.
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Submitted 3 March, 2020;
originally announced March 2020.
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Fermi level tuning and atomic ordering induced giant anomalous Nernst effect in Co2MnAl1-xSix Heusler alloy
Authors:
Y. Sakuraba,
K. Hyodo,
A. Sakuma,
S. Mitani
Abstract:
Co2MnAl has been predicted to have Weyl points near Fermi level which is expected to give rise to exotic transverse transport properties such as large anomalous Hall(AHE) and Nernst effects(ANE) due to large Berry curvature. In this study, the effect of Fermi level position and atomic ordering on AHE and ANE in Co2MnAl1-xSix were studied systematically. The Co2MnAl film keeps B2-disordred structur…
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Co2MnAl has been predicted to have Weyl points near Fermi level which is expected to give rise to exotic transverse transport properties such as large anomalous Hall(AHE) and Nernst effects(ANE) due to large Berry curvature. In this study, the effect of Fermi level position and atomic ordering on AHE and ANE in Co2MnAl1-xSix were studied systematically. The Co2MnAl film keeps B2-disordred structure regardless of annealing temperature, which results in much smaller anomalous Hall conductivity sigma_xy and transverse Peltier coefficient sigma_xy than those calculated for L21-ordered Co2MnAl. Our newly performed calculation of sigma_xy with taking B2 disordering into account well reproduces experimental result, thus it was concluded that Berry curvature originating from Weyl points is largely reduced by B2 disordering. It was also revealed Al substitution with Si shifts the position of Fermi level and improves the L21-atomic ordering largely, leading to strong enhancement of sigma_xy, which also agreed with our theoretical calculation. The highest thermopower of ANE of 6.1uV, which is comparable to the recent reports for Co2MnGa, was observed for Co2MnAl0.63Si0.37 because of dominant contribution of sigma_xy. This study clearly shows the importance of both Fermi level tuning and high atomic ordering for obtaining the effect of topological feature in Co-based Heusler alloys on transverse transport properties.
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Submitted 14 November, 2019;
originally announced November 2019.
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Observation of anomalous Ettingshausen effect and large transverse thermoelectric conductivity in permanent magnets
Authors:
Asuka Miura,
Hossein Sepehri-Amin,
Keisuke Masuda,
Hiroki Tsuchiura,
Yoshio Miura,
Ryo Iguchi,
Yuya Sakuraba,
Junichiro Shiomi,
Kazuhiro Hono,
Ken-ichi Uchida
Abstract:
This study focuses on the potential of permanent magnets as thermoelectric converters. It is found that a SmCo$_5$-type magnet exhibits the large anomalous Ettingshausen effect (AEE) at room temperature and that its charge-to-heat current conversion coefficient is more than one order of magnitude greater than that of typical ferromagnetic metals. The large AEE is an exclusive feature of the SmCo…
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This study focuses on the potential of permanent magnets as thermoelectric converters. It is found that a SmCo$_5$-type magnet exhibits the large anomalous Ettingshausen effect (AEE) at room temperature and that its charge-to-heat current conversion coefficient is more than one order of magnitude greater than that of typical ferromagnetic metals. The large AEE is an exclusive feature of the SmCo$_5$-type magnet among various permanent magnets in practical use, which is independent of the conventional performance of magnets based on static magnetic properties. The experimental results show that the large AEE originates from the intrinsic transverse thermoelectric conductivity of SmCo$_5$. This finding makes a connection between permanent magnets and thermal energy engineering, providing the basis for creating "thermoelectric permanent magnets."
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Submitted 28 November, 2019; v1 submitted 8 October, 2019;
originally announced October 2019.
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Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator
Authors:
W. Zhou,
H. Sepehri-Amin,
T. Taniguchi,
S. Tamaru,
Y. Sakuraba,
S. Kasai,
H. Kubota,
K. Hono
Abstract:
We investigated the dynamics of a novel design of spin torque oscillator (STO) for microwave assisted magnetic recording. Using Ni$_{80}$Fe$_{20}$ (NiFe) as the polarizer and Fe$_{67}$Co$_{33}$ (FeCo) as the field generating layer, we experimentally observed the magnetization reversal of NiFe, followed by multiple signals in the power spectra as the bias voltage increased. The signals reflected th…
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We investigated the dynamics of a novel design of spin torque oscillator (STO) for microwave assisted magnetic recording. Using Ni$_{80}$Fe$_{20}$ (NiFe) as the polarizer and Fe$_{67}$Co$_{33}$ (FeCo) as the field generating layer, we experimentally observed the magnetization reversal of NiFe, followed by multiple signals in the power spectra as the bias voltage increased. The signals reflected the out-of-plane precession (OPP) mode oscillation of both FeCo and NiFe, as well as the magnetoresistance effect of the STO device, which had the frequency equal to the difference between the oscillation frequency of NiFe and FeCo. Such dynamics were reproduced by micromagnetic simulation. In addition to the merit of realizing the OPP mode oscillation with a simple and thin structure suitable for a narrow gap recording head, the experimental results using this design suggested that a large cone angle of $\sim$ 70$^{\circ}$ for the OPP mode oscillation of FeCo was achieved, which was estimated based on the macrospin model.
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Submitted 14 January, 2019;
originally announced January 2019.
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Structure-property relationship of Co$_2$MnSi thin films in response to He$^+$ -irradiation
Authors:
F. Hammerath,
R. Bali,
R. Huebner,
M. R. D. Brandt,
S. Rodan,
K. Potzger,
R. Boettger,
Y. Sakuraba,
B. Buechner,
S. Wurmehl
Abstract:
We investigated the structure-property relationship of Co$_2$MnSi Heusler thin films upon the irradiation with He$^+$ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM), and associated with the corresponding changes of the magnetic behavior. A decrease of both the structural orde…
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We investigated the structure-property relationship of Co$_2$MnSi Heusler thin films upon the irradiation with He$^+$ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM), and associated with the corresponding changes of the magnetic behavior. A decrease of both the structural order and the moment in saturation is observed. Specifically, we detect a direct transition from a highly $L2_1$-ordered to a fully $A2$-disordered structure type and quantify the evolution of the $A2$ structural contribution as a function of ion fluence. Complementary TEM analysis reveals a spatially-resolved distribution of the $L2_1$ and $A2$ phases showing that the $A2$ disorder starts at the upper part of the films. The structural degradation in turn leads to a decreasing magnetic moment in saturation in response to the increasing fluence.
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Submitted 19 September, 2018;
originally announced September 2018.
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Strategic enhancement of anomalous Nernst effect in Co2MnAl1-xSix Heusler compounds
Authors:
Y. Sakuraba,
K. Hyodo,
A. Sakuma,
S. Mitani
Abstract:
The anomalous Nernst effect (ANE), a thermoelectric phenomenon in magnetic materials, has potential for novel energy harvesting applications because its orthogonal relationship between the temperature gradient and the electric field enables us to utilize the large area of non-flat heat sources. In this study, the required thermopower of ANE for practical energy harvesting applications is evaluated…
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The anomalous Nernst effect (ANE), a thermoelectric phenomenon in magnetic materials, has potential for novel energy harvesting applications because its orthogonal relationship between the temperature gradient and the electric field enables us to utilize the large area of non-flat heat sources. In this study, the required thermopower of ANE for practical energy harvesting applications is evaluated in simulations of electric power obtainable from ANE using a low-temperature heat source. A strategy for finding magnetic materials having large ANEs is proposed, which suggests that a large ANE originates from the constructive relationship between large Seebeck, anomalous Hall, and transverse Peltier effects. This strategy leads us to investigate the electric and thermoelectric properties in Co2MnAl1-xSix. As a result, it is found that Co2MnAl0.63Si0.37 has the largest ANE thermopower ever reported, 6.2 uV/K. A first principles calculation of the anomalous Hall conductivity and transverse Peltier coefficient in B2 and L21-ordered Co2MnAl0.63Si0.37 shows close agreement with the experimental results, indicating that the observed large ANE arises from the intrinsic Berry phase curvature of Co2MnAl1-xSix. This study can be a guide for developing materials for new thermoelectric applications using ANE.
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Submitted 14 November, 2019; v1 submitted 5 July, 2018;
originally announced July 2018.
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Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets
Authors:
Satoshi Kokado,
Yuya Sakuraba,
Masakiyo Tsunoda
Abstract:
We derive a simple relational expression between the spin polarization ratio of resistivity, $P_ρ$, and the anisotropic magnetoresistance ratio $Δρ/ρ$, and that between the spin polarization ratio of the density of states at the Fermi energy, $P_{\rm DOS}$, and $Δρ/ρ$ for nearly half-metallic ferromagnets. We find that $P_ρ$ and $P_{\rm DOS}$ increase with increasing $|Δρ/ρ|$ from 0 to a maximum v…
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We derive a simple relational expression between the spin polarization ratio of resistivity, $P_ρ$, and the anisotropic magnetoresistance ratio $Δρ/ρ$, and that between the spin polarization ratio of the density of states at the Fermi energy, $P_{\rm DOS}$, and $Δρ/ρ$ for nearly half-metallic ferromagnets. We find that $P_ρ$ and $P_{\rm DOS}$ increase with increasing $|Δρ/ρ|$ from 0 to a maximum value. In addition, we roughly estimate $P_ρ$ and $P_{\rm DOS}$ for a Co$_2$FeGa$_{0.5}$Ge$_{0.5}$ Heusler alloy by substituting its experimentally observed $Δρ/ρ$ into the respective expressions.
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Submitted 31 August, 2016;
originally announced August 2016.
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The Spin Nernst effect in Tungsten
Authors:
Peng Sheng,
Yuya Sakuraba,
Yong-Chang Lau,
Saburo Takahashi,
Seiji Mitani,
Masamitsu Hayashi
Abstract:
The spin Hall effect allows generation of spin current when charge current is passed along materials with large spin orbit coupling. It has been recently predicted that heat current in a non-magnetic metal can be converted into spin current via a process referred to as the spin Nernst effect. Here we report the observation of the spin Nernst effect in W. In W/CoFeB/MgO heterostructures, we find ch…
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The spin Hall effect allows generation of spin current when charge current is passed along materials with large spin orbit coupling. It has been recently predicted that heat current in a non-magnetic metal can be converted into spin current via a process referred to as the spin Nernst effect. Here we report the observation of the spin Nernst effect in W. In W/CoFeB/MgO heterostructures, we find changes in the longitudinal and transverse voltages with magnetic field when temperature gradient is applied across the film. The field-dependence of the voltage resembles that of the spin Hall magnetoresistance. A comparison of the temperature gradient induced voltage and the spin Hall magnetoresistance allows direct estimation of the spin Nernst angle. We find the spin Nernst angle of W to be similar in magnitude but opposite in sign with its spin Hall angle. Interestingly, under an open circuit condition, such sign difference results in spin current generation larger than otherwise. These results highlight the distinct characteristics of the spin Nernst and spin Hall effects, providing pathways to explore materials with unique band structures that may generate large spin current with high efficiency.
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Submitted 20 September, 2017; v1 submitted 22 July, 2016;
originally announced July 2016.
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Modelling of the Peltier effect in magnetic multilayers
Authors:
Isaac Juarez-Acosta,
Miguel A. Olivares-Robles,
Subrojati Bosu,
Yuya Sakuraba,
Takahide Kubota,
Saburo Takahashi,
Koki Takanashi,
Gerrit E. W. Bauer
Abstract:
We model the charge, spin, and heat currents in ferromagnetic metal$|$normal metal$|$normal metal trilayer structures in the two current model, taking into account bulk and interface thermoelectric properties as well as Joule heating. Results include the temperature distribution as well as resistance-current curves that reproduce the observed shifted parabolic characteristics. Thin tunneling barri…
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We model the charge, spin, and heat currents in ferromagnetic metal$|$normal metal$|$normal metal trilayer structures in the two current model, taking into account bulk and interface thermoelectric properties as well as Joule heating. Results include the temperature distribution as well as resistance-current curves that reproduce the observed shifted parabolic characteristics. Thin tunneling barriers can enhance the apparent Peltier cooling. The model agrees with experimental results for wide multilayer pillars, but the giant effects observed for diameters $\lesssim 100\,$nm are still under discussion.
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Submitted 9 June, 2015;
originally announced June 2015.
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Determination of exchange constants of Heusler compounds by Brillouin light scattering spectroscopy: application to Co$_2$MnSi
Authors:
J. Hamrle,
O. Gaier,
Seong-Gi Min,
B. Hillebrands,
Y. Sakuraba,
Y. Ando
Abstract:
Brillouin light scattering spectroscopy from so-called standing spin waves in thin magnetic films is often used to determine the magnetic exchange constant. The data analysis of the experimentally determined spin-wave modes requires an unambiguous assignment to the correct spin wave mode orders. Often additional investigations are needed to guarantee correct assignment. This is particularly impo…
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Brillouin light scattering spectroscopy from so-called standing spin waves in thin magnetic films is often used to determine the magnetic exchange constant. The data analysis of the experimentally determined spin-wave modes requires an unambiguous assignment to the correct spin wave mode orders. Often additional investigations are needed to guarantee correct assignment. This is particularly important in the case of Heusler compounds where values of the exchange constant vary substantially between different compounds. As a showcase, we report on the determination of the exchange constant (exchange stiffness constant) in Co$_2$MnSi, which is found to be $A=2.35\pm0.1$ $μ$erg/cm ($D=575\pm20$ meV Å$^2$), a value comparable to the value of the exchange constant of Co.
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Submitted 10 February, 2009; v1 submitted 5 October, 2008;
originally announced October 2008.
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Improvement of structural, electronic, and magnetic properties of Co$_2$MnSi thin films by He$^+$-irradiation
Authors:
O. Gaier,
J. Hamrle,
B. Hillebrands,
M. Kallmayer,
P. Pörsch,
G. Schönhense,
H. J. Elmers,
J. Fassbender,
A. Gloskovskii,
C. A. Jenkins,
G. H. Fecher,
C. Felser,
E. Ikenaga,
Y. Sakuraba,
S. Tsunegi,
M. Oogane,
Y. Ando
Abstract:
The influence of 30 keV He$^+$ ion irradiation on structural, electronic and magnetic properties of Co$_2$MnSi thin films with B2 order was investigated. It was found, that irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization towards the bulk properties of the well-ordered Co$_2$MnSi Heusler compoun…
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The influence of 30 keV He$^+$ ion irradiation on structural, electronic and magnetic properties of Co$_2$MnSi thin films with B2 order was investigated. It was found, that irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization towards the bulk properties of the well-ordered Co$_2$MnSi Heusler compound with L2$_1$ structure.
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Submitted 18 September, 2008;
originally announced September 2008.
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Non-quasiparticle states in Co$_2$MnSi evidenced through magnetic tunnel junction spectroscopy measurements
Authors:
L. Chioncel,
Y. Sakuraba,
E. Arrigoni,
M. I. Katsnelson,
M. Oogane,
Y. Ando,
T. Miyazaki,
E. Burzo,
A. I. Lichtenstein
Abstract:
We investigate the effects of electronic correlations in the full-Heusler Co$_2$MnSi, by combining a theoretical analysis of the spin-resolved density of states with tunneling-conductance spectroscopy measurements using Co$_2$MnSi as electrode. Both experimental and theoretical results confirm the existence of so-called non-quasiparticle states and their crucial contribution to the finite-temper…
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We investigate the effects of electronic correlations in the full-Heusler Co$_2$MnSi, by combining a theoretical analysis of the spin-resolved density of states with tunneling-conductance spectroscopy measurements using Co$_2$MnSi as electrode. Both experimental and theoretical results confirm the existence of so-called non-quasiparticle states and their crucial contribution to the finite-temperature spin polarisation in this material.
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Submitted 23 July, 2008; v1 submitted 15 November, 2007;
originally announced November 2007.
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Influence of the L21 ordering degree on the magnetic properties in Co2MnSi Heusler films
Authors:
O. Gaier,
J. Hamrle,
S. J. Hermsdoerfer,
B. Hillebrands,
Y. Sakuraba,
M. Oogane,
Y. Ando
Abstract:
We report on the influence of the improved L21 ordering degree on the magnetic properties of Co2MnSi Heusler films. Different fractions of the L21 phase are obtained by different post-growth annealing temperatures ranging from 350 degC to 500 degC. Room temperature magneto-optical Kerr effect measurements reveal an increase of the coercivity at an intermediate annealing temperature of 425 degC,…
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We report on the influence of the improved L21 ordering degree on the magnetic properties of Co2MnSi Heusler films. Different fractions of the L21 phase are obtained by different post-growth annealing temperatures ranging from 350 degC to 500 degC. Room temperature magneto-optical Kerr effect measurements reveal an increase of the coercivity at an intermediate annealing temperature of 425 degC, which is a fingerprint of an increased number of pinning centers at this temperature. Furthermore, Brillouin light scattering studies show that the improvement of the L21 order in the Co2MnSi films is correlated with a decrease of the saturation magnetization by about 9%. The exchange stiffness constant of Co2MnSi, however, increases by about 8% when the L21 order is improved. Moreover, we observe a drop of the cubic anisotropy constant K1 by a factor of 10 for an increasing amount of the L21 phase.
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Submitted 24 August, 2007;
originally announced August 2007.
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Structure and magnetism in nanocrystalline Ca(La)B$_6$ films
Authors:
Y. Sakuraba,
H. Kato,
F. Sato,
T. Miyazaki,
N. Kimura,
H. Aoki
Abstract:
Nanocrystalline films of La-doped CaB$_6$ have been fabricated by using a rf-magnetron sputtering. Lattice expansion of up to 6% with respect to the bulk value was observed along the direction perpendicular to the film plane, which arises from the trapping of Ar gas into the film. Large ferromagnetic moment of 3 ~ 4 Bohr magneton per La has been observed in some La-doped films only when the latt…
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Nanocrystalline films of La-doped CaB$_6$ have been fabricated by using a rf-magnetron sputtering. Lattice expansion of up to 6% with respect to the bulk value was observed along the direction perpendicular to the film plane, which arises from the trapping of Ar gas into the film. Large ferromagnetic moment of 3 ~ 4 Bohr magneton per La has been observed in some La-doped films only when the lattice expansion rate is larger than 2.5%.
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Submitted 14 February, 2004;
originally announced February 2004.