Showing 1–50 of 54 results for author: Dash, S P

Room temperature nonlocal detection of charge-spin interconversion in a topological insulator

Authors: Anamul Md. Hoque, Lars Sjöström, Dmitrii Khokhriakov, Bing Zhao, Saroj P. Dash

Abstract: Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the spin-Hall effect (SHE), and Rashba states due to high spin-orbit coupling (SOC) properties. These phenomena are vital for observing the charge-spin conversion… ▽ More Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the spin-Hall effect (SHE), and Rashba states due to high spin-orbit coupling (SOC) properties. These phenomena are vital for observing the charge-spin conversion (CSC) processes for spin-based memory, logic and quantum technologies. Although CSC has been observed in TIs by potentiometric measurements, reliable nonlocal detection has so far been limited to cryogenic temperatures up to T = 15 K. Here, we report nonlocal detection of CSC and its inverse effect in the TI compound Bi1.5Sb0.5Te1.7Se1.3 at room temperature using a van der Waals heterostructure with a graphene spin-valve device. The lateral nonlocal device design with graphene allows observation of both spin-switch and Hanle spin precession signals for generation, injection and detection of spin currents by the TI. Detailed bias- and gate-dependent measurements in different geometries prove the robustness of the CSC effects in the TI. These findings demonstrate the possibility of using topological materials to make all-electrical room-temperature spintronic devices. △ Less

Submitted 25 January, 2024; originally announced January 2024.

Comments: 12 pages, 4 figures

Signature of pressure-induced topological phase transition in ZrTe$_5$

Authors: Zoltán Kovács-Krausz, Dániel Nagy, Albin Márffy, Bogdan Karpiak, Zoltán Tajkov, László Oroszlány, János Koltai, Péter Nemes-Incze, Saroj P. Dash, Péter Makk, Szabolcs Csonka, Endre Tóvári

Abstract: The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe$_5$ nanodevices at hydrostatic pressures up to 2 GPa. The t… ▽ More The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe$_5$ nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and subsequent re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe$_5$ is in a weak TI phase in ambient conditions. △ Less

Submitted 15 December, 2023; originally announced December 2023.

Comments: Main Text: 10 pages, 5 figures; Supporting Information: 12 pages, 8 figures

Large Non-Volatile Frequency Tuning of Spin Hall Nano-Oscillators using Circular Memristive Nano-Gates

Authors: Maha Khademi, Akash Kumar, Mona Rajabali, Saroj P. Dash, Johan Åkerman

Abstract: Spin Hall nano oscillators (SHNOs) are promising candidates for neuromorphic computing due to their miniaturized dimensions, non-linearity, fast dynamics, and ability to synchronize in long chains and arrays. However, tuning the individual SHNOs in large chains/arrays, which is key to implementing synaptic control, has remained a challenge. Here, we demonstrate circular memristive nano-gates, both… ▽ More Spin Hall nano oscillators (SHNOs) are promising candidates for neuromorphic computing due to their miniaturized dimensions, non-linearity, fast dynamics, and ability to synchronize in long chains and arrays. However, tuning the individual SHNOs in large chains/arrays, which is key to implementing synaptic control, has remained a challenge. Here, we demonstrate circular memristive nano-gates, both precisely aligned and shifted with respect to nano-constriction SHNOs of W/CoFeB/HfOx, with increased quality of the device tunability. Gating at the exact center of the nano-constriction region is found to cause irreversible degradation to the oxide layer, resulting in a permanent frequency shift of the auto-oscillating modes. As a remedy, gates shifted outside of the immediate nano-constriction region can tune the frequency dramatically (>200 MHz) without causing any permanent change to the constriction region. Circular memristive nano-gates can, therefore, be used in SHNO chains/arrays to manipulate the synchronization states precisely over large networks of oscillators. △ Less

Submitted 18 January, 2024; v1 submitted 6 December, 2023; originally announced December 2023.

Comments: Marie Sklodowska-Curie Actions, H2020-MSCA-ITN-2020; Project Acronym SPEAR; Grant Agreement No. 955671

Ultra-low-current-density single-layer magnetic Weyl semimetal spin Hall nano-oscillators

Authors: Lakhan Bainsla, Yuya Sakuraba, Avinash Kumar Chaurasiya, Akash Kumar, Keisuke Masuda, Ahmad A. Awad, Nilamani Behera, Roman Khymyn, Saroj Prasad Dash, Johan Åkerman

Abstract: Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall… ▽ More Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall conductivity, $σ_{\rm xy}=1.35\times10^{5}$ $Ω^{-1} m^{-1}$ and the anomalous Hall angle, $θ_{\rm H}=15.8\%$, both comparable to bulk values. We observe a dramatic crystalline orientation dependence of the Gilbert damping constant of a factor of two and a giant intrinsic spin Hall conductivity, $\mathit{σ_{\rm SHC}}=(6.08\pm 0.02)\times 10^{5}$ ($\hbar/2e$) $Ω^{-1} m^{-1}$, an order of magnitude higher than literature values of multilayer Co$_{\rm 2}$MnGa stacks [1-3] and single-layer Ni, Co, Fe [4], and Ni$_{\rm 80}$Fe$_{\rm 20}$~[4,5]. As a consequence, spin-orbit-torque driven auto-oscillations of a 30 nm thick magnetic film are observed for the first time, at an ultralow threshold current density of $J_{th}=6.2\times10^{11}$ $Am^{-2}$. Theoretical calculations of the intrinsic spin Hall conductivity, originating from a strong Berry curvature, corroborate the results and yield values comparable to the experiment. Our results open up for the design of spintronic devices based on single layers of magnetic topological quantum materials. △ Less

Submitted 19 April, 2024; v1 submitted 14 November, 2023; originally announced November 2023.

Comments: 19 pages

Evidence of electron correlation induced kink in Dirac bands in a non-symmorphic Kondo lattice system, CeAgSb2

Authors: Sawani Datta, Khadiza Ali, Rahul Verma, Bahadur Singh, Saroj P. Dash, A. Thamizhavel, Kalobaran Maiti

Abstract: We study the behavior of Dirac fermions in the presence of electron correlation in a nonsymmorphic Kondo lattice system, CeAgSb2 employing high-resolution angle-resolved photoemission spectroscopy and first-principles calculations. Experiments reveal crossings of highly dispersive linear bands at the Brillouin zone boundary due to non-symmorphic symmetry. In addition, anisotropic Dirac cones are o… ▽ More We study the behavior of Dirac fermions in the presence of electron correlation in a nonsymmorphic Kondo lattice system, CeAgSb2 employing high-resolution angle-resolved photoemission spectroscopy and first-principles calculations. Experiments reveal crossings of highly dispersive linear bands at the Brillouin zone boundary due to non-symmorphic symmetry. In addition, anisotropic Dirac cones are observed constituted by the squarenet Sb 5p states forming a diamond-shaped nodal line. The Dirac bands are linear in a wide energy range with a unusually high slope and exhibit distinct Dirac point in this highly spin-orbit coupled system. Interestingly, the linearity of the bands are preserved even after the hybridization of these states with the local Ce 4f states, which leads to a small reduction of slope via formation of a 'kink'. These results seed the emergence of an area of robust topological fermions even in presence of strong correlation. △ Less

Submitted 9 November, 2023; originally announced November 2023.

Comments: 4 figures

Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature

Authors: Roselle Ngaloy, Bing Zhao, Soheil Ershadrad, Rahul Gupta, Masoumeh Davoudiniya, Lakhan Bainsla, Lars Sjöström, Anamul M. Hoque, Alexei Kalaboukhov, Peter Svedlindh, Biplab Sanyal, Saroj P. Dash

Abstract: Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, most of the vdW magnet based spintronic devices are so far limited to cryogenic temperatures with magnetic anisotropies favouring out-of… ▽ More Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, most of the vdW magnet based spintronic devices are so far limited to cryogenic temperatures with magnetic anisotropies favouring out-of-plane or canted orientation of the magnetization. Here, we report room-temperature lateral spin-valve devices with strong in-plane magnetic anisotropy of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Magnetization measurements reveal above room-temperature ferromagnetism in CFGT with a strong in-plane magnetic anisotropy. Density functional theory calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices such as efficient spin injection and detection. The spin transport and Hanle spin precession measurements prove a strong in-plane and negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus opening further opportunities for spintronic technologies. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Synergizing Airborne Non-Terrestrial Networks and Reconfigurable Intelligent Surfaces-Aided 6G IoT

Authors: Muhammad Ali Jamshed, Aryan Kaushik, Mesut Toka, Wonjae Shin, Muhammad Zeeshan Shakir, Soumya P. Dash, Davide Dardari

Abstract: On the one hand, Reconfigurable Intelligent Surfaces (RISs) emerge as a promising solution to meet the demand for higher data rates, improved coverage, and efficient spectrum utilization. On the other hand, Non-Terrestrial Networks (NTNs) offer unprecedented possibilities for global connectivity. Moreover, the NTN can also support the upsurge in the number of Internet of Things (IoT) devices by pr… ▽ More On the one hand, Reconfigurable Intelligent Surfaces (RISs) emerge as a promising solution to meet the demand for higher data rates, improved coverage, and efficient spectrum utilization. On the other hand, Non-Terrestrial Networks (NTNs) offer unprecedented possibilities for global connectivity. Moreover, the NTN can also support the upsurge in the number of Internet of Things (IoT) devices by providing reliable and ubiquitous connectivity. Although NTNs have shown promising results, there are several challenges associated with their usage, such as signal propagation delays, interference, security, etc. In this article, we have discussed the possibilities of integrating RIS with an NTN platform to overcome the issues associated with NTN. Furthermore, through experimental validation, we have demonstrated that the RIS-assisted NTN can play a pivotal role in improving the performance of the entire communication system. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Comments: 15 pages, 5 figures

Large out-of-plane spin-orbit torque in topological Weyl semimetal candidate TaIrTe4

Authors: Lakhan Bainsla, Bing Zhao, Anamul Md. Hoque, Lars Sjöström, Nilamani Behera, Mahmoud Abdel-Hafiez, Johan Åkerman, Saroj P. Dash

Abstract: Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. C… ▽ More Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque materials, such as heavy metals and topological insulators, provide only an in-plane spin polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin polarized current components, which is not suitable for energy-efficient spin-orbit torque (SOT) applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using a topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-orbit torque ferromagnetic resonance (STFMR) experiments in a TaIrTe4/Ni80Fe20 heterostructure and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be an order of magnitude higher than the reported values in other materials. These findings of high spin Hall conductivity and large out-of-plane SOT efficiency are suitable for the development of energy efficient and external field-free spintronic devices. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Coexistence of non-trivial van der Waals magnetic orders enable field-free spin-orbit torque switching at room temperature

Authors: Bing Zhao, Lakhan Bainsla, Roselle Ngaloy, Peter Svedlindh, Saroj P. Dash

Abstract: The discovery of van der Waals (vdW) materials exhibiting non-trivial and tunable magnetic interactions at room temperature can give rise to exotic magnetic states, which are not readily attainable with conventional materials. Such vdW magnets can provide a unique platform for studying new magnetic phenomena and realising magnetization dynamics for energy-efficient and non-volatile spintronic memo… ▽ More The discovery of van der Waals (vdW) materials exhibiting non-trivial and tunable magnetic interactions at room temperature can give rise to exotic magnetic states, which are not readily attainable with conventional materials. Such vdW magnets can provide a unique platform for studying new magnetic phenomena and realising magnetization dynamics for energy-efficient and non-volatile spintronic memory and logic technologies. Recent developments in vdW magnets have revealed their potential to enable spin-orbit torque (SOT) induced magnetization dynamics. However, the deterministic and field-free SOT switching of vdW magnets at room temperature has been lacking, prohibiting their potential applications. Here, we demonstrate magnetic field-free and deterministic SOT switching of a vdW magnet (Co0.5Fe0.5)5GeTe2 (CFGT) at room temperature, capitalizing on its non-trivial intrinsic magnetic ordering. We discover a coexistence of ferromagnetic and antiferromagnetic orders in CFGT at room temperature, inducing an intrinsic exchange bias and canted perpendicular magnetism. The resulting canted perpendicular magnetization of CFGT introduces symmetry breaking, facilitating successful magnetic field-free magnetization switching in the CFGT/Pt heterostructure devices. Furthermore, the SOT-induced magnetization dynamics and their efficiency are evaluated using 2nd harmonic Hall measurements. This advancement opens new avenues for investigating tunable magnetic phenomena in vdW material heterostructures and realizing field-free SOT-based spintronic technologies. △ Less

Submitted 25 August, 2023; originally announced August 2023.

RIS-Assisted 6G Wireless Communications: A Novel Statistical Framework in the Presence of Direct Channel

Authors: Soumya P. Dash, Aryan Kaushik

Abstract: A RIS-assisted wireless communication system in the presence of a direct communication path between the transceiver pair is considered in this paper. The transmitter-RIS and the RIS-receiver channels follow independent Nakagami-m distributions, and the direct channel between the transceiver pair follows a Rayleigh distribution. Considering this system model, the statistics of the composite channel… ▽ More A RIS-assisted wireless communication system in the presence of a direct communication path between the transceiver pair is considered in this paper. The transmitter-RIS and the RIS-receiver channels follow independent Nakagami-m distributions, and the direct channel between the transceiver pair follows a Rayleigh distribution. Considering this system model, the statistics of the composite channel for the RIS-assisted communication system are derived in terms of obtaining novel expressions for the probability density functions for the magnitude and the phase of the communication channel. The correctness of the analytical framework is verified via Monte Carlo simulations, and the effects of the shape parameters of the channels and the number of reflecting elements in the RIS on the randomness of the composite channel are studied via numerical results. △ Less

Submitted 11 August, 2023; originally announced August 2023.

Comments: 5 pages

RIS-Aided Index Modulation with Greedy Detection over Rician Fading Channels

Authors: Aritra Basu, Soumya P. Dash, Aryan Kaushik, Debasish Ghose, Marco Di Renzo, Yonina C. Eldar

Abstract: Index modulation schemes for reconfigurable intelligent surfaces (RIS)-assisted systems are envisioned as promising technologies for fifth-generation-advanced and sixth-generation (6G) wireless communication systems to enhance various system capabilities such as coverage area and network capacity. In this paper, we consider a receive diversity RIS-assisted wireless communication system employing I… ▽ More Index modulation schemes for reconfigurable intelligent surfaces (RIS)-assisted systems are envisioned as promising technologies for fifth-generation-advanced and sixth-generation (6G) wireless communication systems to enhance various system capabilities such as coverage area and network capacity. In this paper, we consider a receive diversity RIS-assisted wireless communication system employing IM schemes, namely, space-shift keying (SSK) for binary modulation and spatial modulation (SM) for M-ary modulation for data transmission. The RIS lies in close proximity to the transmitter, and the transmitted data is subjected to a fading environment with a prominent line-of-sight component modeled by a Rician distribution. A receiver structure based on a greedy detection rule is employed to select the receive diversity branch with the highest received signal energy for demodulation. The performance of the considered system is evaluated by obtaining a series-form expression for the probability of erroneous index detection (PED) of the considered target antenna using a characteristic function approach. In addition, closed-form and asymptotic expressions at high and low signal-to-noise ratios (SNRs) for the bit error rate (BER) for the SSK-based system, and the SM-based system employing M-ary phase-shift keying and M-ary quadrature amplitude modulation schemes, are derived. The dependencies of the system performance on the various parameters are corroborated via numerical results. The asymptotic expressions and results of PED and BER at high and low SNR values lead to the observation of a performance saturation and the presence of an SNR value as a point of inflection, which is attributed to the greedy detector's structure. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Comments: 30 pages, 7 figures

Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning

Authors: Sameer Kumar Mallik, Roshan Padhan, Mousam Charan Sahu, Suman Roy, Gopal K Pradhan, Prasana Kumar Sahoo, Saroj Prasad Dash, Satyaprakash Sahoo

Abstract: The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at… ▽ More The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multi-level memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS2/dielectric interface. We have proposed a non-volatile memory application using a single FET device where thermal energy can be ventured to aid the memory functions with multi-level (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way for new avenues in 2D semiconductors toward reliable data processing and storage with high-packing density arrays for brain-inspired artificial learning. △ Less

Submitted 3 May, 2023; originally announced May 2023.

Journal ref: ACS Applied Materials & Interfaces 2023

A ferromagnetic Eu-Pt surface compound grown below hexagonal boron nitride

Authors: Alaa Mohammed Idris Bakhit, Khadiza Ali, Anna A. Makarova, Igor Píš, Federica Bondino, Roberto Sant, Saroj P. Dash, Rodrigo Castrillo, Yuri Hasegawa, J. Enrique Ortega, Laura Fernandez, Frederik Schiller

Abstract: One of the fundamental applications for monolayer-thick 2D materials is their use as protective layers of metal surfaces and in-situ intercalated reactive materials in ambient conditions. Here we investigate the structural, electronic, and magnetic properties, as well as the chemical stability in air of a very reactive metal, Europium, after intercalation between a hexagonal boron nitride (hBN) la… ▽ More One of the fundamental applications for monolayer-thick 2D materials is their use as protective layers of metal surfaces and in-situ intercalated reactive materials in ambient conditions. Here we investigate the structural, electronic, and magnetic properties, as well as the chemical stability in air of a very reactive metal, Europium, after intercalation between a hexagonal boron nitride (hBN) layer and a Pt substrate. We demonstrate that Eu intercalation leads to a hBN-covered ferromagnetic EuPt$_2$ surface alloy with divalent Eu$^{2+}$ atoms at the interface. We expose the system to ambient conditions and find a partial conservation of the di-valent signal and hence the Eu-Pt interface. The use of a curved Pt substrate allows us to explore the changes in the Eu valence state and the ambient pressure protection at different substrate planes. The interfacial EuPt$_2$ surface alloy formation remains the same, but the resistance of the protecting hBN layer to ambient conditions is reduced, likely due to a rougher surface and a more discontinuous hBN coating. △ Less

Submitted 21 June, 2023; v1 submitted 27 January, 2023; originally announced January 2023.

Bottom-up growth of monolayer honeycomb SiC

Authors: C. M. Polley, H. Fedderwitz, T. Balasubramanian, A. A. Zakharov, R. Yakimova, O. Bäcke, J. Ekman, S. P. Dash, S. Kubatkin, S. Lara-Avila

Abstract: The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While $sp^{2}$ bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstr… ▽ More The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While $sp^{2}$ bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstrate large-area, bottom-up synthesis of monocrystalline, epitaxial monolayer honeycomb SiC atop ultrathin transition metal carbide films on SiC substrates. We find the 2D phase of SiC to be almost planar and stable at high temperatures, up to 1200°C in vacuum. Interactions between the 2D-SiC and the transition metal carbide surface result in a Dirac-like feature in the electronic band structure, which in the case of a TaC substrate is strongly spin-split. Our findings represent the first step towards routine and tailored synthesis of 2D-SiC monolayers, and this novel heteroepitaxial system may find diverse applications ranging from photovoltaics to topological superconductivity. △ Less

Submitted 16 January, 2023; originally announced January 2023.

Valley-exchange coupling probed by angle-resolved photoluminescence

Authors: Joshua J. P Thompson, Samuel Brem, Hanlin Fang, Carlos Antón-Solanas, Bo Han, Hangyong Shan, Saroj P. Dash, Witlef Wieczorek, Christian Schneider, Ermin Malic

Abstract: The optical properties of monolayer transition metal dichalcogenides are dominated by tightly-bound excitons. They form at distinct valleys in reciprocal space, and can interact via the valley-exchange coupling, modifying their dispersion considerably. Here, we predict that angle-resolved photoluminescence can be used to probe the changes of the excitonic dispersion. The exchange-coupling leads to… ▽ More The optical properties of monolayer transition metal dichalcogenides are dominated by tightly-bound excitons. They form at distinct valleys in reciprocal space, and can interact via the valley-exchange coupling, modifying their dispersion considerably. Here, we predict that angle-resolved photoluminescence can be used to probe the changes of the excitonic dispersion. The exchange-coupling leads to a unique angle dependence of the emission intensity for both circularly and linearly-polarised light. We show that these emission characteristics can be strongly tuned by an external magnetic field due to the valley-specific Zeeman-shift. We propose that angle-dependent photoluminescence measurements involving both circular and linear optical polarisation as well as magnetic fields should act as strong verification of the role of valley-exchange coupling on excitonic dispersionand its signatures in optical spectra △ Less

Submitted 19 November, 2021; originally announced November 2021.

Channel Estimation and Secret Key Rate Analysis of MIMO Terahertz Quantum Key Distribution

Authors: Neel Kanth Kundu, Soumya P. Dash, Matthew R. McKay, Ranjan K. Mallik

Abstract: We study the secret key rate (SKR) of a multiple-input multiple-output (MIMO) continuous variable quantum key distribution (CVQKD) system operating at terahertz (THz) frequencies, accounting for the effects of channel estimation. We propose a practical channel estimation scheme for the THz MIMO CVQKD system which is necessary to realize transmit-receive beamforming between Alice and Bob. We charac… ▽ More We study the secret key rate (SKR) of a multiple-input multiple-output (MIMO) continuous variable quantum key distribution (CVQKD) system operating at terahertz (THz) frequencies, accounting for the effects of channel estimation. We propose a practical channel estimation scheme for the THz MIMO CVQKD system which is necessary to realize transmit-receive beamforming between Alice and Bob. We characterize the input-output relation between Alice and Bob during the key generation phase, by incorporating the effects of additional noise terms arising due to the channel estimation error and detector noise. Furthermore, we analyze the SKR of the system and study the effect of channel estimation error and overhead. Our simulation results reveal that the SKR may degrade significantly as compared to the SKR upper bound that assumes perfect channel state information, particularly at large transmission distances. △ Less

Submitted 8 October, 2021; originally announced October 2021.

Comments: Submitted to IEEE Transactions on Communications

Multifunctional Spin Logic Gates In Graphene Spin Circuits

Authors: Dmitrii Khokhriakov, Shehrin Sayed, Anamul Md. Hoque, Bogdan Karpiak, Bing Zhao, Supriyo Datta, Saroj P. Dash

Abstract: All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with all-electrical spin current communication has so far remained challenging. Here, we experimentally demonstrate a reprogrammable all-electrical multifunctional spin… ▽ More All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with all-electrical spin current communication has so far remained challenging. Here, we experimentally demonstrate a reprogrammable all-electrical multifunctional spin logic gate in a nanoelectronic device architecture utilizing graphene buses for spin communication and multiplexing and nanomagnets for writing and reading information at room temperature. This gate realizes a multistate majority spin logic operation (sMAJ), which is reconfigured to achieve XNOR, (N)AND, and (N)OR Boolean operations depending on the magnetization of inputs. Physics-based spin circuit model is developed to understand the underlying mechanisms of the multifunctional spin logic gate and its operations. These demonstrations provide a platform for scalable all-electric spin logic and neuromorphic computing in the all-spin domain logic-in-memory architecture. △ Less

Submitted 27 August, 2021; originally announced August 2021.

Van der Waals Magnet based Spin-Valve Devices at Room Temperature

Authors: Bing Zhao, Roselle Ngaloy, Anamul Md. Hoque, Bogdan Karpiak, Dmitrii Khokhriakov, Saroj P. Dash

Abstract: The discovery of van der Waals (vdW) magnets opened up a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW magnets are so far limited to cryogenic temperatures, inhibiting its broader practical applications. Here, for the first time, we demonstrate room temperature spin-valve devices using vdW itinerant ferromagnet… ▽ More The discovery of van der Waals (vdW) magnets opened up a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW magnets are so far limited to cryogenic temperatures, inhibiting its broader practical applications. Here, for the first time, we demonstrate room temperature spin-valve devices using vdW itinerant ferromagnet Fe5GeTe2 in heterostructures with graphene. The tunnel spin polarization of the Fe5GeTe2/graphene vdW interface is detected to be significantly large ~ 45 % and negative at room temperature. Lateral spin-valve device design enables electrical control of spin signal and realization of basic building blocks for device application such as efficient spin injection, transport, precession, and detection functionalities. Furthermore, measurements with different magnetic orientations provide unique insights into the magnetic anisotropy of Fe5GeTe2 and its relation with spin polarization and dynamics in the heterostructure. These findings open opportunities for the applications of vdW magnet-based all-2D spintronic devices and integrated spin circuits at ambient temperatures. △ Less

Submitted 1 July, 2021; originally announced July 2021.

MIMO Terahertz Quantum Key Distribution

Authors: Neel Kanth Kundu, Soumya P. Dash, Matthew R. McKay, Ranjan K. Mallik

Abstract: We propose a multiple-input multiple-output (MIMO) quantum key distribution (QKD) scheme for terahertz (THz) frequency applications operating at room temperature. Motivated by classical MIMO communications, a transmit-receive beamforming scheme is proposed that converts the rank-$r$ MIMO channel between Alice and Bob into $r$ parallel lossy quantum channels. Compared with existing single-antenna Q… ▽ More We propose a multiple-input multiple-output (MIMO) quantum key distribution (QKD) scheme for terahertz (THz) frequency applications operating at room temperature. Motivated by classical MIMO communications, a transmit-receive beamforming scheme is proposed that converts the rank-$r$ MIMO channel between Alice and Bob into $r$ parallel lossy quantum channels. Compared with existing single-antenna QKD schemes, we demonstrate that the MIMO QKD scheme leads to performance improvements by increasing the secret key rate and extending the transmission distance. Our simulation results show that multiple antennas are necessary to overcome the high free-space path loss at THz frequencies. We demonstrate a non-monotonic relation between performance and frequency, and reveal that positive key rates are achievable in the $10-30$ THz frequency range. The proposed scheme can be used for both indoor and outdoor QKD applications for beyond fifth-generation ultra-secure wireless communications systems. △ Less

Submitted 10 July, 2021; v1 submitted 8 May, 2021; originally announced May 2021.

Comments: Revisions submitted to IEEE Communications Letters

Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries

Authors: Dmitrii Khokhriakov, Bogdan Karpiak, Anamul Md. Hoque, Bing Zhao, Subir Parui, Saroj P. Dash

Abstract: The utilization of large-area graphene grown by chemical vapour deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. However, the fundamental influence of the presence of multilayer graphene patches and their boundaries on spin dynamics has not been addressed yet, which is necessary for basic understanding and application of ro… ▽ More The utilization of large-area graphene grown by chemical vapour deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. However, the fundamental influence of the presence of multilayer graphene patches and their boundaries on spin dynamics has not been addressed yet, which is necessary for basic understanding and application of robust spin interconnects. Here, we report universal spin transport and dynamic properties in specially devised single layer, bi-layer, and tri-layer graphene channels and their layer boundaries and folds that are usually present in CVD graphene samples. We observe uniform spin lifetime with isotropic spin relaxation for spins with different orientations in graphene layers and their boundaries at room temperature. In all the inhomogeneous graphene channels, the spin lifetime anisotropy ratios for spins polarized out-of-plane and in-plane are measured to be close to unity. Our analysis shows the importance of both Elliott-Yafet and Dyakonov-Perel mechanisms, with an increasing role of the latter mechanism in multilayer channels. These results of universal and isotropic spin transport on large-area inhomogeneous CVD graphene with multilayer patches and their boundaries and folds at room temperature prove its outstanding spin interconnect functionality, beneficial for the development of scalable spintronic circuits. △ Less

Submitted 4 December, 2020; originally announced December 2020.

Journal ref: ACS Nano, 14, 11, 15864 (2020)

Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design

Authors: Bing Zhao, Anamul Md. Hoque, Dmitrii Khokhriakov, Bogdan Karpiak, Saroj P. Dash

Abstract: The efficient generation and control of spin polarization via charge-spin conversion in topological semimetals are desirable for future spintronic and quantum technologies. Here, we report the charge-spin conversion (CSC) signals measured in a Weyl semimetal candidate WTe2 based hybrid graphene device with a geometrical design. Notably, the geometrical angle of WTe2 on the graphene spin-valve chan… ▽ More The efficient generation and control of spin polarization via charge-spin conversion in topological semimetals are desirable for future spintronic and quantum technologies. Here, we report the charge-spin conversion (CSC) signals measured in a Weyl semimetal candidate WTe2 based hybrid graphene device with a geometrical design. Notably, the geometrical angle of WTe2 on the graphene spin-valve channel yields contributions to symmetric and anti-symmetric CSC signal components. The spin precession measurements of CSC signal at different gate voltages and ferromagnet magnetization shows the robustness of the CSC in WTe2 at room temperature. These results can be useful for the design of heterostructure devices and in the architectures of two-dimensional spintronic circuits. △ Less

Submitted 21 November, 2020; originally announced November 2020.

Fast transient charge trapping in salt-aided CVD synthesized monolayer MoS2 field-effect transistor

Authors: Sameer Kumar Mallik, Sandhyarani Sahoo, Mousam Charan Sahu, Sanjeev K Gupta, Saroj Prasad Dash, Rajeev Ahuja, Satyaprakash Sahoo

Abstract: Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a large-scale synthesis of pristine quality monolayer MoS2 but also advanced nanofabrication and characterization methods for investigation of intrinsic device performances… ▽ More Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a large-scale synthesis of pristine quality monolayer MoS2 but also advanced nanofabrication and characterization methods for investigation of intrinsic device performances. Here, we conduct a meticulous investigation of the fast transient charge trapping mechanisms in field-effect transistors (FETs) of high-quality CVD MoS2 monolayers grown by a salt-driven method. To unfold the intrinsic transistor behavior, an amplitude sweep pulse I~V methodology is adapted with varying pulse widths. A significant increase in the field-effect mobility up to ~100% is achieved along with a hysteresis-free transfer characteristic by applying the shortest pulse. Moreover, to correlate these results, a single pulse time-domain drain current analysis is carried out to unleash the fast and slow transient charge trapping phenomena. Furthermore, rigorous density functional theory (DFT) calculations are implemented to inspect the effects of the Schottky barrier and metal-induced gap states between drain/source electrode and MoS2 for the superior carrier transport. Our findings on the controllable transient charge trapping mechanisms for estimation of intrinsic field-effect mobility and hysteresis-free transfer characteristic in salt-assisted CVD-grown MoS2 FETs will be beneficial for future device applications in complex memory, logic, and sensor systems. △ Less

Submitted 5 October, 2020; originally announced October 2020.

Vertex-Domatic, Edge-Domatic and Total Domatic Number of Uniform Hypergraphs

Authors: Smruti Prava Dash

Abstract: E. J. Cockayne and S. T. Hedetniemi introduced the concept of domatic number of a graph. B. Zelinka extended the concept to the uniform hypergraphs. Further, B. Zelinka defined the concept of edge-domatic number and total edge-domatic number of a graph. In this paper, we investigate and prove some assertions in connection with vertex domatic number, edge-domatic number and total domatic number of… ▽ More E. J. Cockayne and S. T. Hedetniemi introduced the concept of domatic number of a graph. B. Zelinka extended the concept to the uniform hypergraphs. Further, B. Zelinka defined the concept of edge-domatic number and total edge-domatic number of a graph. In this paper, we investigate and prove some assertions in connection with vertex domatic number, edge-domatic number and total domatic number of some specific uniform hypergraphs. △ Less

Submitted 6 September, 2020; originally announced September 2020.

Comments: Submitted to "Information Processing Letters, Elsevier"

Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr

Authors: Zoltán Kovács-Krausz, Anamul Md Hoque, Péter Makk, Bálint Szentpéteri, Mátyás Kocsis, Bálint Fülöp, Michael Vasilievich Yakushev, Tatyana Vladimirovna Kuznetsova, Oleg Evgenevich Tereshchenko, Konstantin Aleksandrovich Kokh, István Endre Lukács, Takashi Taniguchi, Kenji Watanabe, Saroj Prasad Dash, Szabolcs Csonka

Abstract: Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components, utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since al… ▽ More Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components, utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected, where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Owning to its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits. △ Less

Submitted 31 August, 2020; originally announced August 2020.

Comments: Main Text: 10 pages, 5 figures; Supporting Information: 12 pages, 6 figures

Journal ref: Nano Lett. 2020, 20, 7, 4782-4791

Criteria for deterministic single-photon emission in two-dimensional atomic crystals

Authors: Joshua J. P. Thompson, Samuel Brem, Hanlin Fang, Joey Frey, Saroj P. Dash, Witlef Wieczorek, Ermin Malic

Abstract: The deterministic production of single-photons from two dimensional materials promises to usher in a new generation of photonic quantum devices. In this work, we outline criteria by which single-photon emission can be realised in two dimensional materials: spatial isolation, spectral filtering and low excitation of quantum emitters. We explore how these criteria can be fulfilled in atomically thin… ▽ More The deterministic production of single-photons from two dimensional materials promises to usher in a new generation of photonic quantum devices. In this work, we outline criteria by which single-photon emission can be realised in two dimensional materials: spatial isolation, spectral filtering and low excitation of quantum emitters. We explore how these criteria can be fulfilled in atomically thin transition metal dichalcogenides, where excitonic physics dictates the observed photoemission. In particular, we model the effect of defects and localised strain, in accordance with the most common experimental realisations, on the photon statistics of emitted light. Moreover, we demonstrate that an optical cavity has a negative impact on the photon statistics, suppressing the single-photon character of the emission by diminishing the effect of spectral filtering on the emitted light. Our work provides a theoretical framework revealing criteria necessary to facilitate single-photon emission in two-dimensional materials and thus can guide future experimental studies in this field. △ Less

Submitted 24 August, 2020; originally announced August 2020.

Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature

Authors: Dmitrii Khokhriakov, Anamul Md. Hoque, Bogdan Karpiak, Saroj P. Dash

Abstract: Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a… ▽ More Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a nonequilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits. △ Less

Submitted 7 August, 2020; v1 submitted 15 October, 2019; originally announced October 2019.

Journal ref: Nature Communications, 11,1,1-7 (2020)

Unconventional charge-spin conversion in Weyl-semimetal WTe2

Authors: Bing Zhao, Bogdan Karpiak, Dmitrii Khokhriakov, Annika Johansson, Anamul Md. Hoque, Xiaoguang Xu, Yong Jiang, Ingrid Mertig, Saroj P. Dash

Abstract: An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, we report a charge current-induced spin polarization in the type-II Weyl semimetal candidate WTe2 and efficient spin injection and detection in a graphene channel up to room temperature. Contrary to the conventiona… ▽ More An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, we report a charge current-induced spin polarization in the type-II Weyl semimetal candidate WTe2 and efficient spin injection and detection in a graphene channel up to room temperature. Contrary to the conventional spin Hall and Rashba-Edelstein effects, our measurements indicate an unconventional charge-to-spin conversion in WTe2, which is primarily forbidden by the crystal symmetry of the system. Such a large spin polarization can be possible in WTe2 due to a reduced crystal symmetry combined with its large spin Berry curvature, spin-orbit interaction with a novel spin-texture of the Fermi states. We demonstrate a robust and practical method for electrical creation and detection of such a spin polarization using both charge-to-spin conversion and its inverse phenomenon and utilized it for efficient spin injection and detection in a graphene channel up to room temperature. These findings open opportunities for utilizing topological Weyl materials as non-magnetic spin sources in allelectrical van der Waals spintronic circuits and for low-power and high-performance non-volatile spintronic technologies. △ Less

Submitted 7 August, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Journal ref: Advanced Materials 2020

All-electrical creation and control of giant spin-galvanic effect in 1T-MoTe2/graphene heterostructures at room temperature

Authors: Anamul Md. Hoque, Dmitrii Khokhriakov, Bogdan Karpiak, Saroj P. Dash

Abstract: The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW) heterostructures of two-dimensional materials. Here, we exploit a proximity-induced Rashba-Edelstein (REE) effect in vdW heterostructures of Weyl semimetal candi… ▽ More The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW) heterostructures of two-dimensional materials. Here, we exploit a proximity-induced Rashba-Edelstein (REE) effect in vdW heterostructures of Weyl semimetal candidate MoTe2 and CVD graphene, where an unprecedented gate-controlled switching of spin-galvanic effect emerges due to an efficient spin-to-charge conversion at room temperature. The magnitude of the measured spin-galvanic signal is found to be an order of magnitude larger than the other systems, giving rise to a giant REE. The magnitude and the sign of the spin-galvanic signal are shown to be strongly modulated by gate electric field near the charge neutrality point, which can be understood considering the spin textures of the Rashba spin-orbit coupling-induced spin-splitting in conduction and valence bands of the heterostructure. These findings open opportunities for utilization of gate-controlled switching of spin-galvanic effects in spintronic memory and logic technologies and possibilities for realization of new states of matter with novel spin textures in vdW heterostructures with gate-tunable functionalities. △ Less

Submitted 11 October, 2019; v1 submitted 25 August, 2019; originally announced August 2019.

Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene

Authors: Bogdan Karpiak, Aron W. Cummings, Klaus Zollner, Marc Vila, Dmitrii Khokhriakov, Anamul Md Hoque, André Dankert, Peter Svedlindh, Jaroslav Fabian, Stephan Roche, Saroj P. Dash

Abstract: Engineering two-dimensional material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator Cr2Ge2Te6 and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. The pe… ▽ More Engineering two-dimensional material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator Cr2Ge2Te6 and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. The perpendicular magnetic anisotropy of Cr2Ge2Te6 results in significant modification of the spin transport and precession in graphene, which is ascribed to the proximity-induced exchange interaction. Furthermore, the observation of a larger lifetime for perpendicular spins in comparison to the in-plane counterpart suggests the creation of a proximity-induced anisotropic spin texture in graphene. Our experimental results and density functional theory calculations open up opportunities for the realization of proximity-induced magnetic interactions and spin filters in 2D material heterostructures and can form the basic building blocks for future spintronic and topological quantum devices. △ Less

Submitted 26 October, 2019; v1 submitted 15 August, 2019; originally announced August 2019.

Manipulation of exciton and trion quasiparticles in monolayer WS2 via charge transfer

Authors: Anand P. S. Gaur, Adriana M. Rivera, Saroj P. Dash, Sandwip Dey, Ram S. Katiyar, Satyaprakash Sahoo

Abstract: Charge doping in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here we demonstrate chemical doping in CVD grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL… ▽ More Charge doping in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here we demonstrate chemical doping in CVD grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL intensities suggest n-type doping in WS2. The temperature-dependent PL spectra of the doped 1L-WS2 reveal significant enhancement of trion emission intensity over the excitonic emission at low temperature indicating the stability of trion at low temperature. The temperature dependent exciton-trion population dynamic has been modeled using the law of mass action of trion formation. These results shed light on the solution-based chemical doping in 1L WS2 and its profound effect on the photoluminescence which is essential for the control of optical and electrical properties for optoelectronics applications. △ Less

Submitted 7 June, 2019; originally announced June 2019.

Two-Dimensional Spintronic Circuit Architectures on Large Scale Graphene

Authors: Dmitrii Khokhriakov, Bogdan Karpiak, Anamul Md. Hoque, Saroj P. Dash

Abstract: Solid-state electronics based on utilizing the electron spin degree of freedom for storing and processing information can pave the way for next-generation spin-based computing. However, the realization of spin communication between multiple devices in complex spin circuit geometries, essential for practical applications, is still lacking. Here, we demonstrate the spin current propagation in two-di… ▽ More Solid-state electronics based on utilizing the electron spin degree of freedom for storing and processing information can pave the way for next-generation spin-based computing. However, the realization of spin communication between multiple devices in complex spin circuit geometries, essential for practical applications, is still lacking. Here, we demonstrate the spin current propagation in two-dimensional (2D) circuit architectures consisting of multiple devices and configurations using a large area CVD graphene on SiO2/Si substrate at room temperature. Taking advantage of the significant spin transport distance reaching 34 μm in commercially available wafer-scale graphene grown on Cu foil, we demonstrate that the spin current can be effectively communicated between the magnetic memory elements in graphene channels within 2D circuits of Y-junction and Hexa-arm architectures. We further show that by designing graphene channels and ferromagnetic elements at different geometrical angles, the symmetric and antisymmetric components of the Hanle spin precession signal can be remarkably controlled. These findings lay the foundation for the design of complex 2D spintronic circuits, which can be integrated into efficient electronics based on the transport of pure spin currents. △ Less

Submitted 4 February, 2020; v1 submitted 10 May, 2019; originally announced May 2019.

Journal ref: Carbon 2020

Observation of Spin Hall Effect in Weyl Semimetal WTe2 at Room Temperature

Authors: Bing Zhao, Dmitrii Khokhriakov, Yang Zhang, Huixia Fu, Bogdan Karpiak, Anamul Md. Hoque, Xiaoguang Xu, Yong Jiang, Binghai Yan, Saroj P. Dash

Abstract: Discovery of topological Weyl semimetals has revealed the opportunities to realize several extraordinary physical phenomena in condensed matter physics. Specifically, these semimetals with strong spin-orbit coupling, broken inversion symmetry and novel spin texture are predicted to exhibit a large spin Hall effect that can efficiently convert the charge current to a spin current. Here we report th… ▽ More Discovery of topological Weyl semimetals has revealed the opportunities to realize several extraordinary physical phenomena in condensed matter physics. Specifically, these semimetals with strong spin-orbit coupling, broken inversion symmetry and novel spin texture are predicted to exhibit a large spin Hall effect that can efficiently convert the charge current to a spin current. Here we report the direct experimental observation of a large spin Hall and inverse spin Hall effects in Weyl semimetal WTe2 at room temperature obeying Onsager reciprocity relation. We demonstrate the detection of the pure spin current generated by spin Hall phenomenon in WTe2 by making van der Waals heterostructures with graphene, taking advantage of its long spin coherence length and spin transmission at the heterostructure interface. These experimental findings well supported by ab initio calculations show a large charge-spin conversion efficiency in WTe2; which can pave the way for utilization of spin-orbit induced phenomena in spintronic memory and logic circuit architectures. △ Less

Submitted 11 October, 2019; v1 submitted 5 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Research 2, 013286 (2020)

Detection of the interfacial exchange field at a ferromagnetic insulator-nonmagnetic metal interface with pure spin currents

Authors: P. K. Muduli, M. Kimata, Y. Omori, T. Wakamura, Saroj P. Dash, YoshiChika Otani

Abstract: At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation pro… ▽ More At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation processes. We study interfacial exchange field in lateral spin valve devices where Cu spin transport channel is in proximity with ferromagnetic insulator EuS (EuS-LSV) and yttrium iron garnet Y$_3$Fe$_5$O$_{12}$ (YIG-LSV). The spin signals were compared with reference lateral spin valve devices fabricated on nonmagnetic Si/SiO$_2$ substrate with MgO or AlO$_x$ capping. The nonlocal spin valve signal is about 4 and 6 times lower in the EuS-LSV and YIG-LSV, respectively. The suppression in the spin signal has been attributed to enhanced surface spin-flip probability at the Cu-EuS (or Cu-YIG) interface due to interfacial spin-orbit field. Besides spin signal suppression we also found widely observed low temperature peak in the spin signal at $T \sim$30 K is shifted to higher temperature in the case of devices in contact with EuS or YIG. Temperature dependence of spin signal for different injector-detector distances reveal fluctuating exchange field at these interfaces cause additional spin decoherence which limit spin relaxation time in addition to conventional sources of spin relaxation. Our results show that temperature dependent measurement with pure spin current can be used to probe interfacial exchange field at the ferromagnetic insulator-nonmagnetic metal interface. △ Less

Submitted 26 June, 2018; v1 submitted 7 May, 2018; originally announced May 2018.

Comments: 10 pages, 3 figures, accepted in Physical Review B

Journal ref: Phys. Rev. B 98, 024416 (2018)

Origin and evolution of surface spin current in topological insulators

Authors: André Dankert, Priyamvada Bhaskar, Dmitrii Khokhriakov, Isabel H. Rodrigues, Bogdan Karpiak, M. Venkata Kamalakar, Sophie Charpentier, Ion Garate, Saroj P. Dash

Abstract: The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is crucial to maximize the charge-to-spin conversion efficiency. We observe an enhancement of the spin signal due to surface-dominated spin polarization while freezing… ▽ More The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is crucial to maximize the charge-to-spin conversion efficiency. We observe an enhancement of the spin signal due to surface-dominated spin polarization while freezing out the bulk conductivity in semiconducting Bi1.5Sb0.5Te1.7Se1.3 below 100K. Detailed measurements up to room temperature exhibit a strong reduction of the magnetoresistance signal between 2 and 100K, which we attribute to the thermal excitation of bulk carriers and to the electron-phonon coupling in the surface states. The presence and dominance of this effect up to room temperature is promising for spintronic science and technology. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. B 97, 125414 (2018)

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Authors: André Dankert, Parham Pashaei, M. Venkata Kamalakar, Anand P. S. Gaur, Satyaprakash Sahoo, Ivan Rungger, Awadhesh Narayan, Kapildeb Dolui, Anamul Hoque, Michel P. de Jong, Ram S. Katiyar, Stefano Sanvito, Saroj P. Dash

Abstract: The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 %… ▽ More The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 % has been observed, corresponding to spin polarization of 5 - 10 % in the measured temperature range of 300 - 75 K. First principles calculations for ideal junctions results in a tunnel magnetoresistance up to 8 %, and a spin polarization of 26 %. The detailed measurements at different temperatures and bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomenon that control their performance. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Journal ref: ACS Nano, 2017, 11 (6), pp 6389-6395

Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures

Authors: André Dankert, Bogdan Karpiak, Saroj P. Dash

Abstract: The two-dimensional (2D) material graphene is highly promising for Hall sensors due to its potential of having high charge carrier mobility and low carrier concentration at room temperature. Here, we report the scalable batch-fabrication of magnetic Hall sensors on graphene encapsulated in hexagonal boron nitride (h-BN) using commercially available large area CVD grown materials. The all-CVD grown… ▽ More The two-dimensional (2D) material graphene is highly promising for Hall sensors due to its potential of having high charge carrier mobility and low carrier concentration at room temperature. Here, we report the scalable batch-fabrication of magnetic Hall sensors on graphene encapsulated in hexagonal boron nitride (h-BN) using commercially available large area CVD grown materials. The all-CVD grown h-BN/graphene/h-BN van der Waals heterostructures were prepared by layer transfer technique and Hall sensors were batch-fabricated with 1D edge metal contacts. The current-related Hall sensitivities up to 97 V/AT are measured at room temperature. The Hall sensors showed robust performance over the wafer scale with stable characteristics over six months in ambient environment. This work opens avenues for further development of growth and fabrication technologies of all-CVD 2D material heterostructures and allows further improvements in Hall sensor performance for practical applications. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Journal ref: Scientific Reports 7, 15231 (2017)

Gate-tunable Hall sensors on large area CVD graphene protected by h-BN with 1D edge contacts

Authors: Bogdan Karpiak, André Dankert, Saroj P. Dash

Abstract: Graphene is an excellent material for Hall sensors due to its atomically thin structure, high carrier mobility and low carrier density. However, graphene devices need to be protected from the environment for reliable and durable performance in different environmental conditions. Here we present magnetic Hall sensors fabricated on large area commercially available CVD graphene protected by exfoliat… ▽ More Graphene is an excellent material for Hall sensors due to its atomically thin structure, high carrier mobility and low carrier density. However, graphene devices need to be protected from the environment for reliable and durable performance in different environmental conditions. Here we present magnetic Hall sensors fabricated on large area commercially available CVD graphene protected by exfoliated hexagonal boron nitride (h-BN). To connect the graphene active regions of Hall samples to the outputs the 1D edge contacts were utilized which show reliable and stable electrical properties. The operation of the Hall sensors shows the current-related sensitivity up to 345 V/(AT). By changing the carrier concentration and type in graphene by the application of gate voltage we are able to tune the Hall sensitivity. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Journal ref: Journal of Applied Physics 122, 054506 (2017)

One-dimensional ferromagnetic edge contacts to two-dimensional graphene/h-BN heterostructures

Authors: Bogdan Karpiak, André Dankert, Aron W. Cummings, Stephen R. Power, Stephan Roche, Saroj P. Dash

Abstract: We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of ch… ▽ More We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. Such behavior has been confirmed by the absence of a Hanle signal and gate-dependent magnetoresistance measurements that reveal a change in sign of the signal for the electron- and hole-doped regimes, which is in contrast to the expected behavior of the spin signal. Calculations show that the contact-induced fringe fields are typically on the order of hundreds of mT, but can be reduced below 100 mT with careful optimization of the contact geometry. There may be additional contribution from magnetoresistance effects due to tunneling anisotropy in the contacts, which need to be further investigated. These studies are useful for optimization of spin injection and detection in 2D material heterostructures through 1D edge contacts. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Journal ref: 2D Materials 5 (2018) 014001

Resistivity Anomaly in Weyl Semimetal candidate Molybdenum Telluride

Authors: Dhavala Suri, Christopher Linderalv, Bogdan Karpiak, Linnea Anderson, Sandeep Kumar Singh, Andre Dankert, F. C. Chou, Raman Sankar, F. C. Chou, Paul Erhart, Saroj P. Dash, R. S. Patel

Abstract: The Weyl semi-metal candidate MoTe$_{2}$ is expected to exhibit a range of exotic electronic transport properties. It exhibits a structural phase transition near room temperature that is evident in the thermal hysteresis in resistivity and thermopower (Seebeck coefficient) as well as large spin-orbit interaction. Here, we also document a resistivity anomaly of up to 13% in the temperature window b… ▽ More The Weyl semi-metal candidate MoTe$_{2}$ is expected to exhibit a range of exotic electronic transport properties. It exhibits a structural phase transition near room temperature that is evident in the thermal hysteresis in resistivity and thermopower (Seebeck coefficient) as well as large spin-orbit interaction. Here, we also document a resistivity anomaly of up to 13% in the temperature window between 25 and 50 K, which is found to be strongly anisotropic. Based on the experimental data in conjunction with density functional theory calculations, we conjecture that the anomaly can be related to the presence of defects in the system. These findings open opportunities for further investigations and understanding of the transport behavior in these newly discovered semi-metallic layered systems. △ Less

Submitted 16 January, 2018; originally announced January 2018.

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

Authors: André Dankert, Saroj P. Dash

Abstract: Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin polarization has been demonstrated in semiconductors and spin transistor structures using both the electrical and optical methods. However, an unsolved challenge in the… ▽ More Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin polarization has been demonstrated in semiconductors and spin transistor structures using both the electrical and optical methods. However, an unsolved challenge in the field is the realization of all electrical methods to control the spin polarization and spin transistor operation at ambient temperature. For this purpose, two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS$_2$). Here we combine graphene and MoS$_2$ in a van der Waals heterostructure to realize the electric control of the spin polarization and spin lifetime, and demonstrated a spin field-effect transistor (spin-FET) at room temperature in a non-local measurement geometry. We observe electrical gate control of the spin valve signal due to pure spin transport and Hanle spin precession signals in the graphene channel in proximity with MoS$_2$ at room temperature. We show that this unprecedented control over the spin polarization and lifetime stems from the gate-tuning of the Schottky barrier at the MoS$_2$/graphene interface and MoS$_2$ channel conductivity leading to spin interaction with high SOC material. The all-electrical creation, transport and control of the spin polarization in a spin-FET device at room temperature is a substantial step in the field of spintronics. It opens a new platform for the interplay of spin, charge and orbital degrees of freedom for testing a plethora of exotic physical phenomena, which can be key building blocks in future device architectures. △ Less

Submitted 20 October, 2016; originally announced October 2016.

Comments: 12 pages, 4 figures

Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers

Authors: André Dankert, M. Venkata Kamalakar, Abdul Wajid, R. S. Patel, Saroj P. Dash

Abstract: The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nature without dangling bonds or interface trap states makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer… ▽ More The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nature without dangling bonds or interface trap states makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated over a chip scale, we show tunnel magneto resistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects. △ Less

Submitted 13 November, 2014; originally announced November 2014.

Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators

Authors: André Dankert, Johannes Geurs, M. Venkata Kamalakar, Saroj P. Dash

Abstract: Topological insulators (TIs) are a new class of quantum materials that exhibit spin momentum locking (SML) of massless Dirac fermions in the surface states. Usually optical methods, such as angle and spin-resolved photoemission spectroscopy, have been employed to observe the helical spin polarization in the surface states of three-dimensional (3D) TIs up to room temperatures. Recently, spin polari… ▽ More Topological insulators (TIs) are a new class of quantum materials that exhibit spin momentum locking (SML) of massless Dirac fermions in the surface states. Usually optical methods, such as angle and spin-resolved photoemission spectroscopy, have been employed to observe the helical spin polarization in the surface states of three-dimensional (3D) TIs up to room temperatures. Recently, spin polarized surface currents in 3D TIs were detected by electrical methods using ferromagnetic (FM) contacts in a lateral spin-valve measurement geometry. However, probing the spin texture with such electrical approaches is so far limited to temperatures below 125K, which restricts its application potential. Here we demonstrate the room temperature electrical detection of the spin polarization on the surface of Bi$_2$Se$_3$ due to SML by employing spin sensitive FM tunnel contacts. The current-induced spin polarization on the Bi$_2$Se$_3$ surface is probed at room temperature by measuring a spin-valve signal while switching the magnetization direction of the FM detector. The spin signal increases linearly with current bias, reverses sign with current direction, exhibits a weak temperature dependence and decreases with higher TI thickness, as predicted theoretically. Our results demonstrate the electrical detection of the spin polarization on the surface of 3D TIs, which could lead to innovative spin-based quantum information technology at ambient temperatures. △ Less

Submitted 30 October, 2014; v1 submitted 29 October, 2014; originally announced October 2014.

Comments: Incl. Supplementary information

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Authors: M. Venkata Kamalakar, André Dankert, Johan Bergsten, Tommy Ive, Saroj P. Dash

Abstract: The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron motilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D material… ▽ More The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron motilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin-polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. △ Less

Submitted 23 June, 2014; originally announced June 2014.

Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications

Authors: M. Venkata Kamalakar, B. N Madhushankar, André Dankert, Saroj P. Dash

Abstract: Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We observe a reduced of Schottky barrier < 50 meV by using TiO${_2}$/Co contacts, which could be further tuned by gate voltages. Eminently a good transistor perfo… ▽ More Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We observe a reduced of Schottky barrier < 50 meV by using TiO${_2}$/Co contacts, which could be further tuned by gate voltages. Eminently a good transistor performance is achieved in BP devices, with drain current modulation on the order of four to six orders of magnitude. The charge carrier mobility is found to be $\sim$ 155 and 0.18 cm${^2}$ V${^{-1}}$ s${^{-1}}$ for holes and electrons respectively at room temperature. Furthermore, magnetoresistance calculations reveal that the resistances of the BP device with applied gate voltages are in the appropriate range for injection and detection of spin polarized holes. Our results demonstrate the prospect of engineering BP nanolayered devices for efficient nanoelectronic and spintronic applications. △ Less

Submitted 4 July, 2014; v1 submitted 17 June, 2014; originally announced June 2014.

Spin Transport and Precession in Graphene measured by Nonlocal and Three-Terminal Methods

Authors: André Dankert, Mutta Venkata Kamalakar, Johan Bergsten, Saroj P. Dash

Abstract: We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene devices for both techniques over a wide range of temperatures. The magnitude of the spin signals is well explained by spin transport models. These observations ru… ▽ More We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene devices for both techniques over a wide range of temperatures. The magnitude of the spin signals is well explained by spin transport models. These observations rules out any signal enhancements or additional scattering mechanisms at the interfaces for both geometries. This validates the applicability of both the measurement methods for graphene based spintronics devices and their reliable extractions of spin parameters. △ Less

Submitted 5 May, 2014; originally announced May 2014.

Comments: 5 pages, 4 figures

Thermal Creation of Electron Spin Polarization in n-Type Silicon

Authors: André Dankert, Saroj P. Dash

Abstract: Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient across a ferromagnetic tunnel contact. The substrate heating experiments induce a large spin signal of 95 $μ$V, corresponding to 0.54 meV spin-splitting in the co… ▽ More Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient across a ferromagnetic tunnel contact. The substrate heating experiments induce a large spin signal of 95 $μ$V, corresponding to 0.54 meV spin-splitting in the conduction band of n-type silicon by Seebeck spin tunneling mechanism. The thermal origin of the spin injection has been confirmed by the quadratic scaling of the spin signal with the Joule heating current and linear dependence with the heating power. △ Less

Submitted 14 March, 2014; originally announced March 2014.

Journal ref: Dankert, A. & Dash, S. P. Thermal Creation of Electron Spin Polarization in n-Type Silicon. Appl. Phys. Lett. 103, 242405 (2013)

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

Authors: Anand P. S. Gaur, Satyaprakash Sahoo, Majid Ahmadi, Saroj P Dash, Maxime J-F Guinel, Ram S. Katiyar

Abstract: MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-electronic applications. However, for MoS2 a critical fundamental question of significant importance is how the surface energy and hence the wettability is altered in nanoscale -- in particular, the role of crystal quality in… ▽ More MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-electronic applications. However, for MoS2 a critical fundamental question of significant importance is how the surface energy and hence the wettability is altered in nanoscale -- in particular, the role of crystal quality in low dimensions. Present work reports the synthesis of large area MoS2 films on insulating substrates with different surface morphology via vapor phase deposition by varying the growth temperatures. The crystallinity of the samples is examined by transmission electron microscopy and Raman spectroscopy. From contact angle measurements, it is possible to correlate the wettability with crystallinity at nanoscale. The specific surface energy for few layers thick MoS2 is estimated to be around 46.5 mJ/m2. Our results shed light on the MoS2-water interaction which is significant for developing important devices based on MoS2 coated surfaces for micro-fluidic applications. △ Less

Submitted 12 March, 2014; originally announced March 2014.

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Authors: André Dankert, Ravi S. Dulal, Saroj P. Dash

Abstract: Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottky and a SiO2 tunnel barrier in a direct tunneling regime. Furthermore, by increasing the width of the… ▽ More Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottky and a SiO2 tunnel barrier in a direct tunneling regime. Furthermore, by increasing the width of the Schottky barrier in non-degenerate p-type Si, we observed a systematic sign reversal of the Hanle signal in the low bias regime. This dramatic change in the spin injection and detection processes with increased Schottky barrier resistance may be due to a decoupling of the spins in the interface states from the bulk band of Si, yielding a transition from a direct to a localized state assisted tunneling. Our study provides a deeper insight into the spin transport phenomenon, which should be considered for electrical spin injection into any semiconductor. △ Less

Submitted 12 March, 2014; originally announced March 2014.

Journal ref: Sci. Rep. 3,3196 (2013)

TRANS outperforms MTF for two special types of request sequences without locality of reference

Authors: Rakesh Mohanty, Sangita Patel, Shiba Prasad Dash, Burle Sharma

Abstract: Various list accessing algorithms have been proposed in the literature and their performances have been analyzed theoretically and experimentally. Move-To-Front (MTF) and Transpose (TRANS) are two well known primitive list accessing algorithms. MTF has been proved to be the best performing online algorithm till date in the literature for real life inputs and practical applications with locality of… ▽ More Various list accessing algorithms have been proposed in the literature and their performances have been analyzed theoretically and experimentally. Move-To-Front (MTF) and Transpose (TRANS) are two well known primitive list accessing algorithms. MTF has been proved to be the best performing online algorithm till date in the literature for real life inputs and practical applications with locality of reference. It has been shown that when storage space is extremely limited and pointers for lists cannot be used, then array implementation of TRANS gives efficient reorganization. Use of MTF is extensive in the literature whereas, the use of TRANS is rare. As mentioned as an open problem in literature, direct bounds on the behavior and performance of various list accessing algorithms are needed to allow realistic comparisons. Since it has been shown that no single optimal permutation algorithm exists, it becomes necessary to characterize the circumstances that indicate the advantage in using a particular list accessing algorithm. Motivated by above challenging research issue, in this paper we have made an analytical study for evaluating the performance of TRANS list accessing algorithm using two special types of request sequences without locality of reference. We have compared the performance of TRANS with MTF and observed that TRANS outperforms MTF for these considered types of request sequences. △ Less

Submitted 10 September, 2013; originally announced September 2013.

Comments: 9 Pages, Proceedings of International Conference on Communication, Computing and Security (ICCCS)-2012, India. http://www.sciencedirect.com/science/article/pii/S2212017312006123

Journal ref: Procedia Technology, Elsevier, Vol 6, pages 556-563, 2012

Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium

Authors: S. Sharma, A. Spiesser, S. P. Dash, S. Iba, S. Watanabe, B. J. van Wees, H. Saito, S. Yuasa, R. Jansen

Abstract: The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies with the thickness of the tunnel oxide. An extensive set of spin-transport data for Si and Ge magnetic tunnel devices reveals a scaling with the tunnel resistance… ▽ More The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies with the thickness of the tunnel oxide. An extensive set of spin-transport data for Si and Ge magnetic tunnel devices reveals a scaling with the tunnel resistance that violates the core feature of available theories, namely, the linear proportionality of the spin voltage to the injected spin current density. Instead, an anomalous scaling of the spin signal with the tunnel resistance is observed, following a power-law with an exponent between 0.75 and 1 over 6 decades. The scaling extends to tunnel resistance values larger than 10$^{9}$ $Ωμm^2$, far beyond the regime where the classical impedance mismatch plays a role. This scaling is incompatible with existing theory for direct tunnel injection of spins into the semiconductor. It also demonstrates conclusively that the large spin signal does not originate from two-step tunneling via localized states near the oxide/semiconductor interface. Control experiments on devices with a non-magnetic metal (Ru) electrode, instead of the semiconductor, exhibit no Hanle spin signal, showing that spin accumulation in localized states within the tunnel barrier is also not responsible. Control devices in which the spin current is removed by inserting a non-magnetic interlayer exhibit no Hanle signals either, proving that the spin signals observed in the standard devices are genuine and originate from spin-polarized tunneling and the resulting spin accumulation. Altogether, the scaling results suggest that the spin signal is proportional to the applied bias voltage, rather than the (spin) current. △ Less

Submitted 19 November, 2012; originally announced November 2012.

Comments: 10 pages, 8 figures