Showing 1–50 of 53 results for author: Kubatkin, S

In-situ scanning gate imaging of individual two-level material defects in live superconducting quantum circuits

Authors: M. Hegedüs, R. Banerjee, A. Hutcheson, T. Barker, S. Mahashabde, A. V. Danilov, S. E. Kubatkin, V. Antonov, S. E. de Graaf

Abstract: The low temperature physics of structurally amorphous materials is governed by two-level system defects (TLS), the exact origin and nature of which remain elusive despite decades of study. Recent advances towards realising stable high-coherence platforms for quantum computing has increased the importance of studying TLS in solid-state quantum circuits, as they are a persistent source of decoherenc… ▽ More The low temperature physics of structurally amorphous materials is governed by two-level system defects (TLS), the exact origin and nature of which remain elusive despite decades of study. Recent advances towards realising stable high-coherence platforms for quantum computing has increased the importance of studying TLS in solid-state quantum circuits, as they are a persistent source of decoherence and instability. Here we perform scanning gate microscopy on a live superconducting quantum circuit at millikelvin temperatures to locate individual TLS. Our method directly reveals the microscopic nature of TLS and is also capable of deducing the three dimensional orientation of individual TLS electric dipole moments. Such insights, when combined with structural information of the underlying materials, can help unravel the detailed microscopic nature and chemical origin of TLS, directing strategies for their eventual mitigation. △ Less

Submitted 29 August, 2024; originally announced August 2024.

Loss and decoherence in superconducting circuits on silicon: Insights from electron spin resonance

Authors: Aditya Jayaraman, Andrey V. Danilov, Jonas Bylander, Sergey E. Kubatkin

Abstract: Solid-state devices used for quantum computation and quantum sensing applications are adversely affected by loss and noise caused by spurious, charged two-level systems (TLS) and stray paramagnetic spins. These two sources of noise are interconnected, exacerbating the impact on circuit performance. We use an on-chip electron spin resonance (ESR) technique, with niobium nitride (NbN) superconductin… ▽ More Solid-state devices used for quantum computation and quantum sensing applications are adversely affected by loss and noise caused by spurious, charged two-level systems (TLS) and stray paramagnetic spins. These two sources of noise are interconnected, exacerbating the impact on circuit performance. We use an on-chip electron spin resonance (ESR) technique, with niobium nitride (NbN) superconducting resonators, to study surface spins on silicon and the effect of post-fabrication surface treatments. We identify two distinct spin species that are characterized by different spin-relaxation times and respond selectively to various surface treatments (annealing and hydrofluoric acid). Only one of the two spin species has a significant impact on the TLS-limited resonator quality factor at low-power (near single-photon) excitation. We observe a 3-to-5-fold reduction in the total density of spins after surface treatments, and demonstrate the efficacy of ESR spectroscopy in developing strategies to mitigate loss and decoherence in quantum systems. △ Less

Submitted 6 February, 2024; originally announced February 2024.

Scaling of self-stimulated spin echoes

Authors: Sebastian de Graaf, Aditya Jayaraman, Sergey Kubatkin, Andrey Danilov, Vishal Ranjan

Abstract: Self-stimulated echoes have recently been reported in the high cooperativity and inhomogeneous coupling regime of spin ensembles with superconducting resonators. In this work, we study their relative amplitudes using echo-silencing made possible by a fast frequency tunable resonator. The highly anisotropic spin linewidth of Er$^{3+}$ electron spins in the CaWO$_4$ crystal also allows to study the… ▽ More Self-stimulated echoes have recently been reported in the high cooperativity and inhomogeneous coupling regime of spin ensembles with superconducting resonators. In this work, we study their relative amplitudes using echo-silencing made possible by a fast frequency tunable resonator. The highly anisotropic spin linewidth of Er$^{3+}$ electron spins in the CaWO$_4$ crystal also allows to study the dependence on spin-resonator ensemble cooperativity. It is demonstrated that self-stimulated echoes primarily result from a combination of two large control pulses and the echo preceding it. △ Less

Submitted 20 September, 2023; originally announced September 2023.

Bottom-up growth of monolayer honeycomb SiC

Authors: C. M. Polley, H. Fedderwitz, T. Balasubramanian, A. A. Zakharov, R. Yakimova, O. Bäcke, J. Ekman, S. P. Dash, S. Kubatkin, S. Lara-Avila

Abstract: The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While $sp^{2}$ bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstr… ▽ More The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While $sp^{2}$ bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstrate large-area, bottom-up synthesis of monocrystalline, epitaxial monolayer honeycomb SiC atop ultrathin transition metal carbide films on SiC substrates. We find the 2D phase of SiC to be almost planar and stable at high temperatures, up to 1200°C in vacuum. Interactions between the 2D-SiC and the transition metal carbide surface result in a Dirac-like feature in the electronic band structure, which in the case of a TaC substrate is strongly spin-split. Our findings represent the first step towards routine and tailored synthesis of 2D-SiC monolayers, and this novel heteroepitaxial system may find diverse applications ranging from photovoltaics to topological superconductivity. △ Less

Submitted 16 January, 2023; originally announced January 2023.

Quantum bath suppression in a superconducting circuit by immersion cooling

Authors: M. Lucas, A. V. Danilov, L. V. Levitin, A. Jayaraman, A. J. Casey, L. Faoro, A. Ya. Tzalenchuk, S. E. Kubatkin, J. Saunders, S. E. de Graaf

Abstract: Quantum circuits interact with the environment via several temperature-dependent degrees of freedom. Yet, multiple experiments to-date have shown that most properties of superconducting devices appear to plateau out at $T\approx 50$ mK -- far above the refrigerator base temperature. This is for example reflected in the thermal state population of qubits, in excess numbers of quasiparticles, and po… ▽ More Quantum circuits interact with the environment via several temperature-dependent degrees of freedom. Yet, multiple experiments to-date have shown that most properties of superconducting devices appear to plateau out at $T\approx 50$ mK -- far above the refrigerator base temperature. This is for example reflected in the thermal state population of qubits, in excess numbers of quasiparticles, and polarisation of surface spins -- factors contributing to reduced coherence. We demonstrate how to remove this thermal constraint by operating a circuit immersed in liquid $^3$He. This allows to efficiently cool the decohering environment of a superconducting resonator, and we see a continuous change in measured physical quantities down to previously unexplored sub-mK temperatures. The $^3$He acts as a heat sink which increases the energy relaxation rate of the quantum bath coupled to the circuit a thousand times, yet the suppressed bath does not introduce additional circuit losses or noise. Such quantum bath suppression can reduce decoherence in quantum circuits and opens a route for both thermal and coherence management in quantum processors. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Journal ref: Nature Communications 14, 3522 (2023)

Spin echo silencing using a current-biased frequency-tunable resonator

Authors: V. Ranjan, Y. Wen, A. K. V. Keyser, S. E. Kubatkin, A. V. Danilov, T. Lindström, P. Bertet, S. E. de Graaf

Abstract: The ability to control microwave emission from a spin ensemble is a requirement of several quantum memory protocols. Here, we demonstrate such ability by using a resonator whose frequency can be rapidly tuned with a bias current. We store excitations in an ensemble of rare-earth-ions and suppress on-demand the echo emission (`echo silencing') by two methods: 1) detuning the resonator during the sp… ▽ More The ability to control microwave emission from a spin ensemble is a requirement of several quantum memory protocols. Here, we demonstrate such ability by using a resonator whose frequency can be rapidly tuned with a bias current. We store excitations in an ensemble of rare-earth-ions and suppress on-demand the echo emission (`echo silencing') by two methods: 1) detuning the resonator during the spin rephasing, and 2) subjecting spins to magnetic field gradients generated by the bias current itself. We also show that spin coherence is preserved during silencing. △ Less

Submitted 9 June, 2022; originally announced June 2022.

Comments: 11 pages, 5 main figures + supplementary

Scalable fabrication of edge contacts to 2D materials

Authors: Naveen Shetty, Hans He, Richa Mitra, Johanna Huhtasaari, Konstantina Iordanau, Julia Wiktor, Sergey Kubatkin, Saroj Dash, Rositsa Yakimova, Lunjie Zeng, Eva Olsson, Samuel Lara-Avila

Abstract: We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide ($MoS_2$). For epigraphene, the specific contact resistances are of the order of… ▽ More We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide ($MoS_2$). For epigraphene, the specific contact resistances are of the order of $ρ_c$ ~ $50$ $Ωμm$, and follow the Landauer quantum limit, $ρ_c \propto n^{-1/2}$, with $n$ being the carrier density of graphene. For $MoS_2$ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of $> 10^6$ at room temperature ( $> 10^9$ at cryogenic temperatures). The fabrication route here demonstrated allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials. △ Less

Submitted 6 March, 2023; v1 submitted 8 June, 2022; originally announced June 2022.

Reflection-enhanced gain in traveling-wave parametric amplifiers

Authors: S. Kern, P. Neilinger, E. Iľichev, A. Sultanov, M. Schmelz, S. Linzen, J. Kunert, G. Oelsner, R. Stolz, A. Danilov, S. Mahashabde, A. Jayaraman, V. Antonov, S. Kubatkin, M. Grajcar

Abstract: The operating principle of traveling-wave parametric amplifiers is typically understood in terms of the standard coupled mode theory, which describes the evolution of forward propagating waves without any reflections, i.e. for perfect impedance matching. However, in practice, superconducting microwave amplifiers are unmatched nonlinear finite-length devices, where the reflecting waves undergo comp… ▽ More The operating principle of traveling-wave parametric amplifiers is typically understood in terms of the standard coupled mode theory, which describes the evolution of forward propagating waves without any reflections, i.e. for perfect impedance matching. However, in practice, superconducting microwave amplifiers are unmatched nonlinear finite-length devices, where the reflecting waves undergo complex parametric processes, not described by the standard coupled mode theory. Here, we present an analytical solution for the TWPA gain, which includes the interaction of reflected waves. These reflections result in corrections to the well-known results of the standard coupled mode theory, which are obtained for both 3-wave and 4-wave mixing processes. Due to these reflections, gain is enhanced and unwanted nonlinear phase modulations are suppressed. Predictions of the model are experimentally demonstrated on two types of unmatched TWPA, based on coplanar waveguides with a central wire consisting of i) a high kinetic inductance superconductor, and ii) an array of 2000 Josephson junctions. △ Less

Submitted 26 May, 2023; v1 submitted 4 March, 2022; originally announced March 2022.

Comments: 10 pages, 6 figures

Journal ref: Physical Review B, volume=107.17, 2023, pages: 174520

Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene

Authors: Hans He, Naveen Shetty, Sergey Kubatkin, Pascal Stadler, Tomas Löfwander, Mikael Fogelström, José Carlos Miranda-Valenzuela, Rositsa Yakimova, Thilo Bauch, Samuel Lara-Avila

Abstract: We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T > 1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with peak external quantum efficiency of ~ 85% for wavelengths 250-280 nm, corresponding to nearly 10… ▽ More We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T > 1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with peak external quantum efficiency of ~ 85% for wavelengths 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ~50 fA translate into an estimated record high specific detectivity D = 3.5 x 10^15 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications. △ Less

Submitted 3 March, 2022; originally announced March 2022.

Exceptionally accurate large graphene quantum Hall arrays for the new SI

Authors: Hans He, Karin Cedergren, Naveen Shetty, Samuel Lara-Avila, Sergey Kubatkin, Tobias Bergsten, Gunnar Eklund

Abstract: The quantum Hall effect (QHE) is a cornerstone in the new International System of Units (SI), wherein the base units are derived from seven fundamental constants such as Planck's constant h and elementary charge e. Graphene has revolutionized practical resistance metrology by enabling the realization of quantized resistance h/2e^2 = 12.9... kOhm under relaxed experimental conditions. Looking ahead… ▽ More The quantum Hall effect (QHE) is a cornerstone in the new International System of Units (SI), wherein the base units are derived from seven fundamental constants such as Planck's constant h and elementary charge e. Graphene has revolutionized practical resistance metrology by enabling the realization of quantized resistance h/2e^2 = 12.9... kOhm under relaxed experimental conditions. Looking ahead, graphene also has the potential to improve realizations of the electronic kilogram using the Kibble balance, and the quantum Ampere in wide current ranges. However, these prospects require different resistance values than practically achievable in single QHE devices, while also imposing stringent demands on energy dissipation in single QHE devices, ultimately requiring currents almost two orders of magnitude higher than the typical QHE breakdown currents IC ~ 100 uA achievable in graphene. Here we present unprecedented accuracy in the quantization of a record sized quantum Hall array (QHA), demonstrating RK/236 ~ 109 Ohm with 0.2 part-per-billion (nOhm/Ohm) accuracy with IC over 5 mA (~ 1 nOhm/Ohm accuracy for IC = 8.5 mA), using epitaxial graphene on silicon carbide (epigraphene). The array quantization accuracy, comparable to the most precise universality tests of QHE in single Hall bar devices, together with the scalability and reliability of this approach pave the road for superior realizations of three key units in the modern SI: the ohm, the ampere, and the kilogram. △ Less

Submitted 1 December, 2022; v1 submitted 16 November, 2021; originally announced November 2021.

Comments: Main text 12 pages, 4 figures.Supplementary information 4 pages, 4 figures

Journal ref: Nat Commun 13, 6933 (2022)

Electron-phonon coupling of epigraphene at millikelvin temperatures

Authors: Bayan Karimi, Hans He, Yu-Cheng Chang, Libin Wang, Jukka P. Pekola, Rositsa Yakimova, Naveen Shetty, Joonas T. Peltonen, Samuel Lara-Avila, Sergey Kubatkin

Abstract: We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphene's sheet conductance as in-situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the… ▽ More We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphene's sheet conductance as in-situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the $T^4$ dependence characteristic for clean two-dimensional conductor. Based on our measurement we predict the noise-equivalent power of $\sim 10^{-22}~{\rm W}/\sqrt{\rm Hz}$ of epigraphene bolometer at the low end of achievable temperatures. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Pulsed Electron Spin Resonance of an Organic Microcrystal by Dispersive Readout

Authors: Ailsa Keyser, Jonathan Burnett, Sergey Kubatkin, Andrey Danilov, Mark Oxborrow, Sebastian de Graaf, Tobias Lindström

Abstract: We establish a testbed system for the development of high-sensitivity Electron Spin Resonance (ESR) techniques for small samples at cryogenic temperatures. Our system consists of a Niobium Nitride thin-film planar superconducting microresonator designed to have a concentrated mode volume to couple to a small amount of paramagnetic material, and to be resilient to magnetic fields of up to 400 mT. A… ▽ More We establish a testbed system for the development of high-sensitivity Electron Spin Resonance (ESR) techniques for small samples at cryogenic temperatures. Our system consists of a Niobium Nitride thin-film planar superconducting microresonator designed to have a concentrated mode volume to couple to a small amount of paramagnetic material, and to be resilient to magnetic fields of up to 400 mT. At 65 mK we measure high-cooperativity coupling ($C \approx 19$) to an organic radical microcrystal containing $10^{12}$ spins in a pico-litre volume. We detect the spin-lattice decoherence rate via the dispersive frequency shift of the resonator. Techniques such as these could be suitable for applications in quantum information as well as for pulsed ESR interrogation of very few spins and could provide insights into the surface chemistry of, for example, the material defects in superconducting quantum processors. △ Less

Submitted 22 October, 2020; v1 submitted 15 September, 2020; originally announced September 2020.

Comments: 8 pages 5 figures

Two-level systems in superconducting quantum devices due to trapped quasiparticles

Authors: S. E. de Graaf, L. Faoro, L. B. Ioffe, S. Mahashabde, J. J. Burnett, T. Lindström, S. E. Kubatkin, A. V. Danilov, A. Ya. Tzalenchuk

Abstract: A major issue for the implementation of large scale superconducting quantum circuits is the interaction with interfacial two-level system defects (TLS) that leads to qubit relaxation and impedes qubit operation in certain frequency ranges that also drift in time. Another major challenge comes from non-equilibrium quasiparticles (QPs) that result in qubit dephasing and relaxation. In this work we s… ▽ More A major issue for the implementation of large scale superconducting quantum circuits is the interaction with interfacial two-level system defects (TLS) that leads to qubit relaxation and impedes qubit operation in certain frequency ranges that also drift in time. Another major challenge comes from non-equilibrium quasiparticles (QPs) that result in qubit dephasing and relaxation. In this work we show that such QPs can also serve as a source of TLS. Using spectral and temporal mapping of TLS-induced fluctuations in frequency tunable resonators, we identify a subset of the general TLS population that are highly coherent TLS with a low reconfiguration temperature $\sim$ 300 mK, and a non-uniform density of states. These properties can be understood if these TLS are formed by QPs trapped in shallow subgap states formed by spatial fluctutations of the superconducting order parameter $Δ$. Magnetic field measurements of one such TLS reveals a link to superconductivity. Our results imply that trapped QPs can induce qubit relaxation. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Comments: 7 pages, 4 figures, plus 18 pages, 13 figures supplemental

Journal ref: Science Advances, 6, eabc5055 (2020)

Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Authors: Kyung Ho Kim, Hans He, Claudia Struzzi, Alexei Zakharov, Cristina Giusca, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin, Samuel Lara-Avila

Abstract: We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 °C in an Argon atmosphere. We explore the intercalation of Au and decoupling… ▽ More We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 °C in an Argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterizations and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate tunable ambipolar transport across the Dirac point, and n- or p-type doping depending on the Au content. △ Less

Submitted 3 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 102, 165403 (2020)

Fast tunable high Q-factor superconducting microwave resonators

Authors: S. Mahashabde, E. Otto, D. Montemurro, S. de Graaf, S. Kubatkin, A. Danilov

Abstract: We present fast tunable superconducting microwave resonators fabricated from planar NbN on a sapphire substrate. The $3λ/4$ wavelength resonators are tuning fork shaped and tuned by passing a dc current which controls the kinetic inductance of the tuning fork prongs. The $λ/4$ section from the open end operates as an integrated impedance converter which creates a nearly perfect short for microwave… ▽ More We present fast tunable superconducting microwave resonators fabricated from planar NbN on a sapphire substrate. The $3λ/4$ wavelength resonators are tuning fork shaped and tuned by passing a dc current which controls the kinetic inductance of the tuning fork prongs. The $λ/4$ section from the open end operates as an integrated impedance converter which creates a nearly perfect short for microwave currents at the dc terminal coupling points, thus preventing microwave energy leakage through the dc lines. We measure an internal quality factor $Q_{\rm int}>10{^{5}}$ over the entire tuning range. We demonstrate a tuning range of $> 3\%$ and tuning response times as short as 20 ns for the maximum achievable detuning. Due to the quasi-fractal design, the resonators are resilient to magnetic fields of up to 0.5 T. △ Less

Submitted 2 May, 2020; v1 submitted 24 March, 2020; originally announced March 2020.

Journal ref: Phys. Rev. Applied 14, 044040 (2020)

The performance limits of epigraphene Hall sensors

Authors: Hans He, Naveen Shetty, Thilo Bauch, Sergey Kubatkin, Timo Kaufmann, Martin Cornills, Rositsa Yakimova, Samuel Lara-Avila

Abstract: Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work we investigate epigraphene Hall sensors where epigraphene is doped across the… ▽ More Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work we investigate epigraphene Hall sensors where epigraphene is doped across the Dirac point using molecular doping. Depending on the carrier density, molecular-doped epigraphene Hall sensors reach room temperature sensitivities $S_V=0.23 V/VT$,$S_I=1440 V/AT$ and magnetic field detection limits down to $B_{MIN}=27$ $nT/\sqrt{Hz}$ at 20 kHz. Thermally stabilized devices demonstrate operation up to $T=150$ $^oC$ with $S_V=0.12 V/VT$, $S_I=300 V/AT$ and $B_{MIN}\approx 100$ $nT/\sqrt{Hz}$ at 20 kHz. △ Less

Submitted 18 March, 2020; originally announced March 2020.

Chemical sensing with atomically-thin metals templated by a two-dimensional insulator

Authors: Kyung Ho Kim, Hans He, Marius Rodner, Rositsa Yakimova, Karin Larsson, Marten Piantek, David Serrate, Alexei Zakharov, Sergey Kubatkin, Jens Eriksson, Samuel Lara-Avila

Abstract: Boosting the sensitivity of solid-state gas sensors by incorporating nanostructured materials as the active sensing element can be complicated by interfacial effects. Interfaces at nanoparticles, grains, or contacts may result in non-linear current-voltage response, high electrical resistance, and ultimately, electric noise that limits the sensor read-out. Here we report the possibility to prepare… ▽ More Boosting the sensitivity of solid-state gas sensors by incorporating nanostructured materials as the active sensing element can be complicated by interfacial effects. Interfaces at nanoparticles, grains, or contacts may result in non-linear current-voltage response, high electrical resistance, and ultimately, electric noise that limits the sensor read-out. Here we report the possibility to prepare nominally one atom thin, electrically continuous metals, by straightforward physical vapor deposition on the carbon zero-layer grown epitaxially on silicon carbide. With platinum as the metal, its electrical conductivity is strongly modulated when interacting with chemical analytes, due to charges being transferred to/from Pt. This, together with the scalability of the material, allows us to microfabricate chemiresistor devices for electrical read-out of chemical species with sub part-per-billion detection limits. The two-dimensional system formed by atomically-thin metals open up a route for resilient and high sensitivity chemical detection, and could be the path for designing new heterogeneous catalysts with superior activity and selectivity. △ Less

Submitted 3 March, 2020; originally announced March 2020.

Towards quantum-limited coherent detection of terahertz waves in charge-neutral graphene

Authors: S. Lara-Avila, A. Danilov, D. Golubev, H. He, K. H. Kim, R. Yakimova, F. Lombardi, T. Bauch, S. Cherednichenko, S. Kubatkin

Abstract: Spectacular advances in heterodyne astronomy with both the Herschel Space Observatory and Stratospheric Observatory for Far Infrared Astronomy (SOFIA) have been largely due to breakthroughs in detector technology. In order to exploit the full capacity of future THz telescope space missions (e.g. Origins Space Telescope), new concepts of THz coherent receivers are needed, providing larger bandwidth… ▽ More Spectacular advances in heterodyne astronomy with both the Herschel Space Observatory and Stratospheric Observatory for Far Infrared Astronomy (SOFIA) have been largely due to breakthroughs in detector technology. In order to exploit the full capacity of future THz telescope space missions (e.g. Origins Space Telescope), new concepts of THz coherent receivers are needed, providing larger bandwidths and imaging capabilities with multi-pixel focal plane heterodyne arrays. Here we show that graphene, uniformly doped to the Dirac point, enables highly sensitive and wideband coherent detection of THz signals. With material resistance dominated by quantum localization, and thermal relaxation governed by electron diffusion, proof-of-concept graphene bolometers demonstrate a gain bandwidth of 8 GHz and a mixer noise temperature of 475 K, limited by residual thermal background in our setup. An optimized device will result in a mixer noise temperature as low as 36 K, with the gain bandwidth exceeding 20 GHz, and a Local Oscillator power lower than 100 pW. In conjunction with the emerging quantum-limited amplifiers at the intermediate frequency, our approach promises quantum-limited sensing in the THz domain, potentially surpassing superconducting technologies, particularly for large heterodyne arrays. △ Less

Submitted 5 April, 2019; originally announced April 2019.

Comments: 15 pages, 4 figures

Journal ref: Nature Astronomy (2019)

Near-Field Scanning Microwave Microscopy in the Single Photon Regime

Authors: S. Geaney, D. Cox, T. Hönigl-Decrinis, R. Shaikhaidarov, S. E. Kubatkin, T. Lindström, A. V. Danilov, S. E. de Graaf

Abstract: The microwave properties of nano-scale structures are important in a wide variety of applications in quantum technology. Here we describe a low-power cryogenic near-field scanning microwave microscope (NSMM) which maintains nano-scale dielectric contrast down to the single microwave photon regime, up to $10^{9}$ times lower power than in typical NSMMs. We discuss the remaining challenges towards d… ▽ More The microwave properties of nano-scale structures are important in a wide variety of applications in quantum technology. Here we describe a low-power cryogenic near-field scanning microwave microscope (NSMM) which maintains nano-scale dielectric contrast down to the single microwave photon regime, up to $10^{9}$ times lower power than in typical NSMMs. We discuss the remaining challenges towards developing nano-scale NSMM for quantum coherent interaction with two-level systems as an enabling tool for the development of quantum technologies in the microwave regime. △ Less

Submitted 30 May, 2019; v1 submitted 21 February, 2019; originally announced February 2019.

Uniform doping of graphene close to the charge neutrality point by polymer-assisted spontaneous assembly of molecular dopants

Authors: Hans He, Kyung Ho Kim, Andrey Danilov, Domenico Montemurro, Liyang Yu, Yung Woo Park, Floriana Lombardi, Thilo Bauch, Kasper Moth-Poulsen, Tihomir Iakimov, Rositsa Yakimova, Per Malmberg, Christian Müller, Sergey Kubatkin, Samuel Lara-Avila

Abstract: Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions… ▽ More Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC - achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly (methyl-methacrylate) - proceeds via the spontaneous accumulation of dopants at the graphene-polymer interface and by the formation of a charge-transfer complex that yields low-disorder, charge-neutral graphene with carrier mobilities ~70,000 cm2/Vs at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin coating wafer-scale substrates in ambient conditions, opens up a scalable technological route towards expanding the functionality of 2D materials. △ Less

Submitted 15 May, 2018; originally announced May 2018.

Suppression of 1/f noise in solid state quantum devices by surface spin desorption

Authors: S. E. de Graaf, L. Faoro, J. Burnett, A. A. Adamyan, A. Ya. Tzalenchuk, S. E. Kubatkin, T. Lindström, A. V. Danilov

Abstract: Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the effects of TLS have been hampered by a lack of surface analysis tools sensitive enough to identify their chemical and physical nature. Here we measure the dielectric loss, frequency noise and electron spin resonance (ESR)… ▽ More Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the effects of TLS have been hampered by a lack of surface analysis tools sensitive enough to identify their chemical and physical nature. Here we measure the dielectric loss, frequency noise and electron spin resonance (ESR) spectrum in superconducting resonators and demonstrate that desorption of surface spins is accompanied by an almost tenfold reduction in the frequency noise. We provide experimental evidence that simultaneously reveals the chemical signatures of adsorbed magnetic moments and demonstrates their coupling via the electric-field degree of freedom to the resonator, causing dielectric (charge) noise in solid state quantum devices. △ Less

Submitted 25 May, 2017; originally announced May 2017.

Comments: 13 pages, 11 figures

Journal ref: Nature Communications, 9:1143 (2018)

Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC

Authors: Cassandra Chua, Arseniy Lartsev, Jinggao Sui, Vishal Panchal, Reuben Puddy, Carly Richardson, Charles G. Smith, T. J. B. M. Janssen, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin, Malcolm R. Connolly

Abstract: We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphen… ▽ More We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below $T^*$, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder. △ Less

Submitted 31 March, 2017; originally announced March 2017.

Direct identification of dilute surface spins on Al$_2$O$_3$: Origin of flux noise in quantum circuits

Authors: S. E. de Graaf, A. A. Adamyan, T. Lindström, D. Erts, S. E. Kubatkin, A. Ya. Tzalenchuk, A. V. Danilov

Abstract: It is universally accepted that noise and decoherence affecting the performance of superconducting quantum circuits are consistent with the presence of spurious two-level systems (TLS). In recent years bulk defects have been generally ruled out as the dominant source, and the search has focused on surfaces and interfaces. Despite a wide range of theoretical models and experimental efforts, the ori… ▽ More It is universally accepted that noise and decoherence affecting the performance of superconducting quantum circuits are consistent with the presence of spurious two-level systems (TLS). In recent years bulk defects have been generally ruled out as the dominant source, and the search has focused on surfaces and interfaces. Despite a wide range of theoretical models and experimental efforts, the origin of these surface TLS still remains largely unknown, making further mitigation of TLS induced decoherence extremely challenging. Here we use a recently developed on-chip electron spin resonance (ESR) technique that allows us to detect spins with a very low surface coverage. We combine this technique with various surface treatments specifically to reveal the nature of native surface spins on Al$_2$O$_3$ -- the mainstay of almost all solid state quantum devices. On a large number of samples we resolve three ESR peaks with the measured total paramagnetic spin density $n=2.2\times 10^{17}$m$^{-2}$, which matches the density inferred from the flux noise in SQUIDs. We show that two of these peaks originate from physisorbed atomic hydrogen which appears on the surface as a by-product of water dissociation. We suggest that the third peak is due to molecular oxygen on the Al$_2$O$_3$ surface captured at strong Lewis base defect sites, producing charged O$_2^-$. These results provide important information towards the origin of charge and flux noise in quantum circuits. Our findings open up a whole new approach to identification and controlled reduction of paramagnetic sources of noise in solid state quantum devices. △ Less

Submitted 15 September, 2016; originally announced September 2016.

Comments: 6 pages, 2 figures (supplementary material 6 pages, 6 figures)

Journal ref: Phys. Rev. Lett. 118, 057703 (2017)

Angular dependent micro-ESR characterization of a locally doped Gd3+:Al2O3 system

Authors: I. S. Wisby, S. E. de Graaf, R. Gwilliam, A. Adamyan, S. E. Kubatkin, P. J. Meeson, A. Ya. Tzalenchuk, T. Lindström

Abstract: Interfacing rare-earth doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd$^{3+}$ in Al$_2$O$_3$ spin system coupled to a superconducting micro-resonator. We investigate the properties of the implanted spin syste… ▽ More Interfacing rare-earth doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd$^{3+}$ in Al$_2$O$_3$ spin system coupled to a superconducting micro-resonator. We investigate the properties of the implanted spin system through angular dependent micro-resonator electron spin resonance (micro-ESR) spectroscopy. We find, despite the high energy near-surface implantation, the resulting micro-ESR spectra to be in excellent agreement with the modelled Hamiltonian, supporting the integration of dopant ions into their relevant lattice sites whilst maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our micro-resonator, emphasising the need for controllable local implantation. △ Less

Submitted 7 December, 2015; originally announced December 2015.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Applied 6, 024021 (2016)

Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system

Authors: T. J. B. M. Janssen, S. Rozhko, I. Antonov, A. Tzalenchuk, J. M. Williams, Z. Melhem, H. He, S. Lara-Avila, S. Kubatkin, R. Yakimova

Abstract: We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant a… ▽ More We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant advance in technology has come about as a result of the unique properties of epitaxial graphene on SiC. △ Less

Submitted 16 July, 2015; originally announced July 2015.

Comments: 15 pages, 9 figures

Journal ref: 2D Materials 2 (2015) 035015

Influence of impurity spin dynamics on quantum transport in epitaxial graphene

Authors: Samuel Lara-Avila, Sergey Kubatkin, Oleksiy Kashuba, Joshua A. Folk, Silvia Lüscher, Rositza Yakimova, T. J. B. M. Janssen, Alexander Tzalenchuk, Vladimir Fal'ko

Abstract: Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is cau… ▽ More Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is caused at least in part by spinful scatterers. A non-monotonic dependence of effective decoherence rate on $B_{\parallel}$ reveals the intricate role of scatterers' spin dynamics in forming the interference correction to conductivity, an effect that has gone unnoticed in earlier weak localisation studies △ Less

Submitted 14 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. Lett. 115, 106602 (2015)

Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements

Authors: J. Huang, J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, V. Antonov, T. Yager, S. Lara-Avila, S. Kubatkin, R. Yakimova, R. J. Nicholas

Abstract: We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder… ▽ More We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0 \sim 9.1 \times 10^{10}$ cm$^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations. △ Less

Submitted 14 May, 2015; originally announced May 2015.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 92, 075407 (2015)

The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC

Authors: Tom Yager, Arseniy Lartsev, Rositza Yakimova, Samuel Lara-Avila, Sergey Kubatkin

Abstract: Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content. Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content. △ Less

Submitted 6 February, 2015; originally announced February 2015.

Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene

Authors: J. Huang, J. A. Alexander-Webber, T. J. B. M. Janssen, A. Tzalenchuk, T. Yager, S. Lara-Avila, S. Kubatkin, R. L. Myers-Ward, V. D. Wheeler, D. K. Gaskill, R. J. Nicholas

Abstract: Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interaction… ▽ More Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence $n_e^{-1.5}$ in the scaling of the $T^4$ power law is observed in bilayer graphene, in contrast to the $n_e^{-0.5}$ dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems. △ Less

Submitted 22 September, 2014; originally announced September 2014.

Comments: 9 pages, 8 figures

Journal ref: J. Phys.: Condens. Matter 27 164202 (2015)

Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator

Authors: I. Wisby, S. E. de Graaf, R. Gwilliam, A. Adamyan, S. Kubatkin, P. J. Meeson, A. Ya. Tzalenchuk, T. Lindström

Abstract: We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd$^{3+}$ in Al$_{2}$O$_{3}$) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor… ▽ More We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd$^{3+}$ in Al$_{2}$O$_{3}$) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor of the resonators which remain above $10^{5}$. Using microwave absorption spectroscopy we observe electron-spin resonances in good agreement with numerical modelling and extract corresponding coupling rates of the order of $1$ MHz and spin linewidths of $50 - 65$ MHz. △ Less

Submitted 10 September, 2014; v1 submitted 18 July, 2014; originally announced July 2014.

Comments: 4 pages, 2 Figures

Journal ref: Appl. Phys. Lett. 105, 102601 (2014)

Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Authors: C. J. Chua, M. R. Connolly, A. Lartsev, T. Yager, S. Lara-Avila, S. Kubatkin, S. Kopylov, V. I. Fal'ko, R. Yakimova, R. Pearce, T. J. B. M. Janssen, A. Ya. Tzalenchuk, C. G. Smith

Abstract: We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons… ▽ More We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe. △ Less

Submitted 27 October, 2014; v1 submitted 22 May, 2014; originally announced May 2014.

Comments: 5 pages, 5 figures

Journal ref: Nano Letters, 2014, 14 (6), pp 3369-3373

A near-field scanning microwave microscope based on a superconducting resonator for low power measurements

Authors: S. E. de Graaf, A. V. Danilov, A. Adamyan, S. E. Kubatkin

Abstract: We report on the design and performance of a cryogenic (300 mK) near-field scanning microwave microscope. It uses a microwave resonator as the near-field sensor, operating at a frequency of 6 GHz and microwave probing amplitudes down to 100 uV, approaching low enough photon population (N~1000) of the resonator such that coherent quantum manipulation becomes feasible. The resonator is made out of a… ▽ More We report on the design and performance of a cryogenic (300 mK) near-field scanning microwave microscope. It uses a microwave resonator as the near-field sensor, operating at a frequency of 6 GHz and microwave probing amplitudes down to 100 uV, approaching low enough photon population (N~1000) of the resonator such that coherent quantum manipulation becomes feasible. The resonator is made out of a miniaturized distributed fractal superconducting circuit that is integrated with the probing tip, micromachined to be compact enough such that it can be mounted directly on a quartz tuning-fork, and used for parallel operation as an atomic force microscope (AFM). The resonator is magnetically coupled to a transmission line for readout, and to achieve enhanced sensitivity we employ a Pound-Drever-Hall measurement scheme to lock to the resonance frequency. We achieve a well localized near-field around the tip such that the microwave resolution is comparable to the AFM resolution, and a capacitive sensitivity down to 6.4x10^-20 F/rtHz, limited by mechanical noise. We believe that the results presented here are a significant step towards probing quantum systems at the nanoscale using near-field scanning microwave microscopy. △ Less

Submitted 2 April, 2014; originally announced April 2014.

Journal ref: Rev. Sci. Instrum. 84, 023706 (2013)

Probing of electromagnetic fields on atomic scale by photoelectric phenomena in graphene

Authors: Peter Olbrich, Christoph Drexler, Leonid E. Golub, Sergey N. Danilov, Vadim A. Shalygin, Rositza Yakimova, Samuel Lara-Avila, Sergey Kubatkin, Britta Redlich, Rupert Huber, Sergey D. Ganichev

Abstract: We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that n… ▽ More We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in 2D crystals and other atomic scale structures can be giantly enhanced by a proper combination of the spectral range and substrate material. △ Less

Submitted 1 August, 2013; originally announced August 2013.

Dynamic parity recovery in a strongly driven Cooper-pair box

Authors: S. E. de Graaf, J. Leppäkangas, A. Adamyan, A. V. Danilov, T. Lindström, M. Fogelström, T. Bauch, G. Johansson, S. E. Kubatkin

Abstract: We study a superconducting charge qubit coupled to an intensive electromagnetic field and probe changes in the resonance frequency of the formed dressed states. At large driving strengths, exceeding the qubit energy-level splitting, this reveals the well known Landau-Zener-Stuckelberg (LZS) interference structure of a longitudinally driven two-level system. For even stronger drives we observe a si… ▽ More We study a superconducting charge qubit coupled to an intensive electromagnetic field and probe changes in the resonance frequency of the formed dressed states. At large driving strengths, exceeding the qubit energy-level splitting, this reveals the well known Landau-Zener-Stuckelberg (LZS) interference structure of a longitudinally driven two-level system. For even stronger drives we observe a significant change in the LZS pattern and contrast. We attribute this to photon-assisted quasiparticle tunneling in the qubit. This results in the recovery of the qubit parity, eliminating effects of quasiparticle poisoning and leads to an enhanced interferometric response. The interference pattern becomes robust to quasiparticle poisoning and has a good potential for accurate charge sensing. △ Less

Submitted 18 August, 2013; v1 submitted 19 June, 2013; originally announced June 2013.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 111, 137002 (2013)

Effects of quasiparticle tunneling in a circuit-QED realization of a strongly driven two-level system

Authors: J. Leppäkangas, S. E. de Graaf, A. Adamyan, M. Fogelström, A. V. Danilov, T. Lindström, S. E. Kubatkin, G. Johansson

Abstract: We experimentally and theoretically study the frequency shift of a driven cavity coupled to a superconducting charge qubit. In addition to previous studies, we here also consider drive strengths large enough to energetically allow for quasiparticle creation. Quasiparticle tunneling leads to the inclusion of more than two charge states in the dynamics. To explain the observed effects, we develop a… ▽ More We experimentally and theoretically study the frequency shift of a driven cavity coupled to a superconducting charge qubit. In addition to previous studies, we here also consider drive strengths large enough to energetically allow for quasiparticle creation. Quasiparticle tunneling leads to the inclusion of more than two charge states in the dynamics. To explain the observed effects, we develop a master equation for the microwave dressed charge states, including quasiparticle tunneling. A bimodal behavior of the frequency shift as a function of gate voltage can be used for sensitive charge detection. However, at weak drives the charge sensitivity is significantly reduced by non-equilibrium quasiparticles, which induce transitions to a non-sensitive state. Unexpectedly, at high enough drives, quasiparticle tunneling enables a very fast relaxation channel to the sensitive state. In this regime, the charge sensitivity is thus robust against externally injected quasiparticles and the desired dynamics prevail over a broad range of temperatures. We find very good agreement between theory and experiment over a wide range of drive strengths and temperatures. △ Less

Submitted 11 September, 2013; v1 submitted 18 June, 2013; originally announced June 2013.

Comments: 25 pages, 7 figures

Journal ref: J. Phys. B: At. Mol. Opt. Phys. 46 224019 (2013)

Weak localization scattering lengths in epitaxial, and CVD graphene

Authors: A. M. R. Baker, J. A. Alexander-Webber, T. Altebaeumer, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. -T. Lin, L. -J. Li, R. J. Nicholas

Abstract: Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L… ▽ More Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L$_\varphi$, L$_i$, and L$_*$ on carrier density. We find no significant carrier dependence for L$_\varphi$, a weak decrease for L$_i$ with increasing carrier density just beyond a large standard error, and a n$^{-\frac{1}{4}}$ dependence for L$_*$. We demonstrate that currents as low as 0.01\,nA are required in smaller devices to avoid hot-electron artefacts in measurements of the quantum corrections to conductivity. △ Less

Submitted 10 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. B86 235441 (2012)

Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene

Authors: J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, B. A. Piot, D. K. Maude, R. J. Nicholas

Abstract: We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$)… ▽ More We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $ν=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density. △ Less

Submitted 17 April, 2013; originally announced April 2013.

Quantum resistance metrology using graphene

Authors: T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, V. I. Fal'ko

Abstract: In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphe… ▽ More In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also brie y discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally we discuss other possible applications of graphene in metrology. △ Less

Submitted 18 July, 2013; v1 submitted 15 March, 2013; originally announced March 2013.

Comments: arXiv admin note: substantial text overlap with arXiv:1202.2985

Journal ref: Progress in Physics 76, 104501 (2013)

Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene

Authors: A. M. R. Baker J. A. Alexander-Webber, T. Altebaeumer, S. D. McMullan, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. -T Lin, L. -J Li, R. J. Nicholas

Abstract: Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, wi… ▽ More Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by $\sim$40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of $T_{e}^4$ at low temperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidence for enhancement of the energy loss rate due to disorder in CVD samples. △ Less

Submitted 19 December, 2012; originally announced December 2012.

Comments: 8 figs PRB in press

Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Authors: T. J. B. M. Janssen, J. M. Williams, N. E. Fletcher, R. Goebel, A. Tzalenchuk, R. Yakimova, S. Lara-Avila, S. Kubatkin, V. I. Fal'ko

Abstract: The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation… ▽ More The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\rm K}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisation of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget. △ Less

Submitted 14 February, 2012; originally announced February 2012.

Journal ref: Metrologia 49 (2012) 294-306

Graphene Nanogap for Gate Tunable Quantum Coherent Single Molecule Electronics

Authors: A. Bergvall, K. Berland, P. Hyldgaard, S. Kubatkin, T. Lofwander

Abstract: We present atomistic calculations of quantum coherent electron transport through fulleropyrrolidine terminated molecules bridging a graphene nanogap. We predict that three difficult problems in molecular electronics with single molecules may be solved by utilizing graphene contacts: (1) a back gate modulating the Fermi level in the graphene leads facilitate control of the device conductance in a t… ▽ More We present atomistic calculations of quantum coherent electron transport through fulleropyrrolidine terminated molecules bridging a graphene nanogap. We predict that three difficult problems in molecular electronics with single molecules may be solved by utilizing graphene contacts: (1) a back gate modulating the Fermi level in the graphene leads facilitate control of the device conductance in a transistor effect with high on/off current ratio; (2) the size mismatch between leads and molecule is avoided, in contrast to the traditional metal contacts; (3) as a consequence, distinct features in charge flow patterns throughout the device are directly detectable by scanning techniques. We show that moderate graphene edge disorder is unimportant for the transistor function. △ Less

Submitted 23 August, 2011; originally announced August 2011.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 84, 155451 (2011)

Terahertz radiation driven chiral edge currents in graphene

Authors: J. Karch, C. Drexler, P. Olbrich, M. Fehrenbacher, M. Hirmer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, B. Birkner, J. Eroms, D. Weiss, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, S. D. Ganichev

Abstract: We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which… ▽ More We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity. △ Less

Submitted 19 July, 2011; originally announced July 2011.

Comments: 4 pages, 4 figure, additional Supplemental Material (3 pages, 1 figure)

Helicity-dependent photocurrents in graphene layers excited by mid-infrared radiation of a CO$_2$-laser

Authors: Chongyun Jiang, V. A. Shalygin, V. Yu. Panevin, S. N. Danilov, M. M. Glazov, R. Yakimova, S. Lara-Avila, S. Kubatkin, S. D. Ganichev

Abstract: We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caus… ▽ More We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caused by the interplay of the circular $ac$ Hall effect and the circular photogalvanic effect. Studying the frequency dependence of the current in graphene layers grown on the SiC substrate we observe that the current exhibits a resonance at frequencies matching the longitudinal optical phonon in SiC. △ Less

Submitted 31 May, 2011; originally announced May 2011.

Graphene, universality of the quantum Hall effect and redefinition of the SI system

Authors: T. J. B. M. Janssen, N. E. Fletcher, R. Goebel, J. M. Williams, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, V. I. Falko

Abstract: The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial… ▽ More The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference of the quantized resistance value within the relative standard uncertainty of our measurement of 8.6\times10-11, being the most stringent test of the universality of the quantum Hall effect in terms of material independence. △ Less

Submitted 15 September, 2011; v1 submitted 20 May, 2011; originally announced May 2011.

Journal ref: New Journal of Physics, 13 (2011) 093026

Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light

Authors: Samuel Lara-Avila, Kasper Moth-Poulsen, Rositza Yakimova, Thomas Bjørnholm, Vladimir Fal'ko, Alexander Tzalenchuk, Sergey Kubatkin

Abstract: Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes relatively high level of electron doping in this material, which is rather difficult to change by electrostatic gating alone. Here we describe one solution to… ▽ More Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes relatively high level of electron doping in this material, which is rather difficult to change by electrostatic gating alone. Here we describe one solution to these problems, allowing both encapsulation and control of the carrier concentration in a wide range. We describe a novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers: a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. Unexposed, the same double layer of polymers works well as capping material, improving the temporal stability and uniformity of the doping level of the sample. By UV exposure of this heterostructure we controlled electrical parameters of graphene in a non-invasive, non-volatile, and reversible way, changing the carrier concentration by a factor of 50. The electronic properties of the exposed SiC/ graphene/polymer heterostructures remained stable over many days at room temperature, but heating the polymers above the glass transition reversed the effect of light. The newly developed photochemical gating has already helped us to improve the robustness (large range of quantizing magnetic field, substantially higher opera- tion temperature and significantly enhanced signal-to-noise ratio due to significantly increased breakdown current) of a graphene resistance standard to such a level that it starts to compete favorably with mature semiconductor heterostructure standards. [2,3] △ Less

Submitted 31 January, 2011; originally announced January 2011.

Comments: Published online in "Advanced Materials", 7 Jan 2011. Category cond-mat.mes-hall

Journal ref: S. Lara-Avila, K. Moth-Poulsen, R. Yakimova, T. Bjørnholm, V. Fal'ko, A. Tzalenchuk, S. Kubatkin, Advanced Materials. (2011)

Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Authors: T. J. B. M. Janssen, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, S. Kopylov, V. Fal'ko

Abstract: We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. O… ▽ More We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10^10 in the Hall resistance quantization measurements. △ Less

Submitted 17 May, 2011; v1 submitted 17 September, 2010; originally announced September 2010.

Journal ref: Phys. Rev. B 83, 233402 (2011)

Circular ac Hall Effect

Authors: J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, S. D. Ganichev

Abstract: We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose si… ▽ More We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed electric and magnetic fields which are however rotating with the light's frequency. △ Less

Submitted 12 August, 2010; originally announced August 2010.

Comments: 4 pages, 5 figures

Charge transfer between epitaxial graphene and silicon carbide

Authors: Sergey Kopylov, Alexander Tzalenchuk, Sergey Kubatkin, Vladimir I. Fal'ko

Abstract: We analyse doping of graphene grown on SiC in two models which differ by the source of charge transfered to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC,… ▽ More We analyse doping of graphene grown on SiC in two models which differ by the source of charge transfered to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyse the responsivity of graphene to the density variation by means of electrostatic gates. △ Less

Submitted 25 July, 2010; originally announced July 2010.

Comments: 3 pages; submitted to APL

Journal ref: Appl. Phys. Lett. 97, 112109 (2010)

Quantum Resistance Standard Based on Epitaxial Graphene

Authors: Alexander Tzalenchuk, Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo, Mikael Syväjärvi, Rositza Yakimova, Olga Kazakova, T. J. B. M. Janssen, Vladimir Fal'ko, Sergey Kubatkin

Abstract: We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resis… ▽ More We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics. △ Less

Submitted 7 September, 2009; originally announced September 2009.

Comments: Submitted

Journal ref: Nature Nanotechnology 5, 186 - 189 (2010)

SiC Graphene Suitable For Quantum Hall Resistance Metrology

Authors: Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo, Mikael Syväjärvi, Rositza Yakimova, Vladimir Fal'ko, Alexander Tzalenchuk, Sergey Kubatkin

Abstract: We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several… ▽ More We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene. △ Less

Submitted 7 September, 2009; originally announced September 2009.

Comments: Submitted to Science Brevia 07 July 2009, rejected 10 July 2009 as more appropriate for a more specialized journal

Journal ref: arxiv:0909.1220 and Nature Nanotechnology 5, 186 - 189 (2010)