Showing 1–44 of 44 results for author: Yakimova, R

Bottom-up growth of monolayer honeycomb SiC

Authors: C. M. Polley, H. Fedderwitz, T. Balasubramanian, A. A. Zakharov, R. Yakimova, O. Bäcke, J. Ekman, S. P. Dash, S. Kubatkin, S. Lara-Avila

Abstract: The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While $sp^{2}$ bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstr… ▽ More The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While $sp^{2}$ bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstrate large-area, bottom-up synthesis of monocrystalline, epitaxial monolayer honeycomb SiC atop ultrathin transition metal carbide films on SiC substrates. We find the 2D phase of SiC to be almost planar and stable at high temperatures, up to 1200°C in vacuum. Interactions between the 2D-SiC and the transition metal carbide surface result in a Dirac-like feature in the electronic band structure, which in the case of a TaC substrate is strongly spin-split. Our findings represent the first step towards routine and tailored synthesis of 2D-SiC monolayers, and this novel heteroepitaxial system may find diverse applications ranging from photovoltaics to topological superconductivity. △ Less

Submitted 16 January, 2023; originally announced January 2023.

Nature of photoexcited states in ZnO-embedded graphene quantum dots

Authors: Ivan Shtepliuk, Rositsa Yakimova

Abstract: The combination of wide-band gap semiconductors like zinc oxide (ZnO) and graphene quantum dots (GQDs) is a promising strategy to tune optoelectronic properties of GQDs and to develop new functionalities. Here we report on a theoretical design of not-yet-synthesized hybrid materials composed of ZnO clusters surrounded by carbon moieties, hereinafter referred to as ZnO-embedded graphene quantum dot… ▽ More The combination of wide-band gap semiconductors like zinc oxide (ZnO) and graphene quantum dots (GQDs) is a promising strategy to tune optoelectronic properties of GQDs and to develop new functionalities. Here we report on a theoretical design of not-yet-synthesized hybrid materials composed of ZnO clusters surrounded by carbon moieties, hereinafter referred to as ZnO-embedded graphene quantum dots. Their structure and light absorption properties are presented, with an in-depth analysis of the nature of the photoexcited states. The stability of the (ZnO)nC96-2n system with n=1, 3, 4, 7, 12 and 27 is investigated by estimating cohesive energy and performing vibrational mode analysis. A strong dependence of the structural and optoelectronic properties of the hybrid material on the amount of ZnO pairs is revealed and discussed. A strong light absorption and unexpected enhancement of Raman modes related to the vibrations in carbon moiety are observed for highly symmetric (ZnO)27C42 system that makes it an ideal study subject. Complementary excited state analysis, charge density difference (CDD) analysis and interfragment charge transfer analysis enabled reaching deep insights into the nature of the excited states. A dominating contribution of doubly degenerate locally excited states in broadband light absorption by (ZnO)27C42 is identified. The present results are helpful to elucidate the nature of the fundamental internal mechanisms underlying the light absorption in ZnO-embedded graphene quantum dots, thereby providing a scientific background for future experimental study of low-dimensional metal-oxygen-carbon materials family. △ Less

Submitted 22 November, 2022; originally announced November 2022.

Scalable fabrication of edge contacts to 2D materials

Authors: Naveen Shetty, Hans He, Richa Mitra, Johanna Huhtasaari, Konstantina Iordanau, Julia Wiktor, Sergey Kubatkin, Saroj Dash, Rositsa Yakimova, Lunjie Zeng, Eva Olsson, Samuel Lara-Avila

Abstract: We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide ($MoS_2$). For epigraphene, the specific contact resistances are of the order of… ▽ More We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide ($MoS_2$). For epigraphene, the specific contact resistances are of the order of $ρ_c$ ~ $50$ $Ωμm$, and follow the Landauer quantum limit, $ρ_c \propto n^{-1/2}$, with $n$ being the carrier density of graphene. For $MoS_2$ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of $> 10^6$ at room temperature ( $> 10^9$ at cryogenic temperatures). The fabrication route here demonstrated allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials. △ Less

Submitted 6 March, 2023; v1 submitted 8 June, 2022; originally announced June 2022.

Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene

Authors: Hans He, Naveen Shetty, Sergey Kubatkin, Pascal Stadler, Tomas Löfwander, Mikael Fogelström, José Carlos Miranda-Valenzuela, Rositsa Yakimova, Thilo Bauch, Samuel Lara-Avila

Abstract: We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T > 1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with peak external quantum efficiency of ~ 85% for wavelengths 250-280 nm, corresponding to nearly 10… ▽ More We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T > 1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with peak external quantum efficiency of ~ 85% for wavelengths 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ~50 fA translate into an estimated record high specific detectivity D = 3.5 x 10^15 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications. △ Less

Submitted 3 March, 2022; originally announced March 2022.

Electron-phonon coupling of epigraphene at millikelvin temperatures

Authors: Bayan Karimi, Hans He, Yu-Cheng Chang, Libin Wang, Jukka P. Pekola, Rositsa Yakimova, Naveen Shetty, Joonas T. Peltonen, Samuel Lara-Avila, Sergey Kubatkin

Abstract: We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphene's sheet conductance as in-situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the… ▽ More We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphene's sheet conductance as in-situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the $T^4$ dependence characteristic for clean two-dimensional conductor. Based on our measurement we predict the noise-equivalent power of $\sim 10^{-22}~{\rm W}/\sqrt{\rm Hz}$ of epigraphene bolometer at the low end of achievable temperatures. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Authors: E. Schilirò, R. Lo Nigro, S. E. Panasci, F. M. Gelardi, S. Agnello, R. Yakimova, F. Roccaforte, F. Giannazzo

Abstract: In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H-SiC) has been investigated by atomic force microscopy (AFM) and Raman spectroscopy. Contrary to what is typically observed for other types of graphene, a large and uniform density of nucleation sites… ▽ More In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H-SiC) has been investigated by atomic force microscopy (AFM) and Raman spectroscopy. Contrary to what is typically observed for other types of graphene, a large and uniform density of nucleation sites was observed in the case of EG and ascribed to the presence of the buffer layer at EG/SiC interface. The deposition process was characterized by Al2O3 island growth in the very early stages, followed by the formation of a continuous Al2O3 film (2.4 nm thick) after only 40 ALD cycles due to the islands coalescence, and subsequent layer-by-layer growth. Raman spectroscopy analyses showed low impact of the ALD process on the defects density and doping of EG. The EG strain was also almost unaffected by the deposition in the regime of island growth and coalescence, whereas a significant increase was observed after the formation of a compact Al2O3 film. The obtained results can have important implications for device applications of epitaxial graphene requiring the integration of ultra-thin high-k insulators. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Comments: 19 pages, 6 figures

Journal ref: Carbon 169 (2020) 172-181

Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Authors: Kyung Ho Kim, Hans He, Claudia Struzzi, Alexei Zakharov, Cristina Giusca, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin, Samuel Lara-Avila

Abstract: We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 °C in an Argon atmosphere. We explore the intercalation of Au and decoupling… ▽ More We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 °C in an Argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterizations and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate tunable ambipolar transport across the Dirac point, and n- or p-type doping depending on the Au content. △ Less

Submitted 3 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 102, 165403 (2020)

The performance limits of epigraphene Hall sensors

Authors: Hans He, Naveen Shetty, Thilo Bauch, Sergey Kubatkin, Timo Kaufmann, Martin Cornills, Rositsa Yakimova, Samuel Lara-Avila

Abstract: Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work we investigate epigraphene Hall sensors where epigraphene is doped across the… ▽ More Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work we investigate epigraphene Hall sensors where epigraphene is doped across the Dirac point using molecular doping. Depending on the carrier density, molecular-doped epigraphene Hall sensors reach room temperature sensitivities $S_V=0.23 V/VT$,$S_I=1440 V/AT$ and magnetic field detection limits down to $B_{MIN}=27$ $nT/\sqrt{Hz}$ at 20 kHz. Thermally stabilized devices demonstrate operation up to $T=150$ $^oC$ with $S_V=0.12 V/VT$, $S_I=300 V/AT$ and $B_{MIN}\approx 100$ $nT/\sqrt{Hz}$ at 20 kHz. △ Less

Submitted 18 March, 2020; originally announced March 2020.

Chemical sensing with atomically-thin metals templated by a two-dimensional insulator

Authors: Kyung Ho Kim, Hans He, Marius Rodner, Rositsa Yakimova, Karin Larsson, Marten Piantek, David Serrate, Alexei Zakharov, Sergey Kubatkin, Jens Eriksson, Samuel Lara-Avila

Abstract: Boosting the sensitivity of solid-state gas sensors by incorporating nanostructured materials as the active sensing element can be complicated by interfacial effects. Interfaces at nanoparticles, grains, or contacts may result in non-linear current-voltage response, high electrical resistance, and ultimately, electric noise that limits the sensor read-out. Here we report the possibility to prepare… ▽ More Boosting the sensitivity of solid-state gas sensors by incorporating nanostructured materials as the active sensing element can be complicated by interfacial effects. Interfaces at nanoparticles, grains, or contacts may result in non-linear current-voltage response, high electrical resistance, and ultimately, electric noise that limits the sensor read-out. Here we report the possibility to prepare nominally one atom thin, electrically continuous metals, by straightforward physical vapor deposition on the carbon zero-layer grown epitaxially on silicon carbide. With platinum as the metal, its electrical conductivity is strongly modulated when interacting with chemical analytes, due to charges being transferred to/from Pt. This, together with the scalability of the material, allows us to microfabricate chemiresistor devices for electrical read-out of chemical species with sub part-per-billion detection limits. The two-dimensional system formed by atomically-thin metals open up a route for resilient and high sensitivity chemical detection, and could be the path for designing new heterogeneous catalysts with superior activity and selectivity. △ Less

Submitted 3 March, 2020; originally announced March 2020.

Towards quantum-limited coherent detection of terahertz waves in charge-neutral graphene

Authors: S. Lara-Avila, A. Danilov, D. Golubev, H. He, K. H. Kim, R. Yakimova, F. Lombardi, T. Bauch, S. Cherednichenko, S. Kubatkin

Abstract: Spectacular advances in heterodyne astronomy with both the Herschel Space Observatory and Stratospheric Observatory for Far Infrared Astronomy (SOFIA) have been largely due to breakthroughs in detector technology. In order to exploit the full capacity of future THz telescope space missions (e.g. Origins Space Telescope), new concepts of THz coherent receivers are needed, providing larger bandwidth… ▽ More Spectacular advances in heterodyne astronomy with both the Herschel Space Observatory and Stratospheric Observatory for Far Infrared Astronomy (SOFIA) have been largely due to breakthroughs in detector technology. In order to exploit the full capacity of future THz telescope space missions (e.g. Origins Space Telescope), new concepts of THz coherent receivers are needed, providing larger bandwidths and imaging capabilities with multi-pixel focal plane heterodyne arrays. Here we show that graphene, uniformly doped to the Dirac point, enables highly sensitive and wideband coherent detection of THz signals. With material resistance dominated by quantum localization, and thermal relaxation governed by electron diffusion, proof-of-concept graphene bolometers demonstrate a gain bandwidth of 8 GHz and a mixer noise temperature of 475 K, limited by residual thermal background in our setup. An optimized device will result in a mixer noise temperature as low as 36 K, with the gain bandwidth exceeding 20 GHz, and a Local Oscillator power lower than 100 pW. In conjunction with the emerging quantum-limited amplifiers at the intermediate frequency, our approach promises quantum-limited sensing in the THz domain, potentially surpassing superconducting technologies, particularly for large heterodyne arrays. △ Less

Submitted 5 April, 2019; originally announced April 2019.

Comments: 15 pages, 4 figures

Journal ref: Nature Astronomy (2019)

Wafer scale growth and characterization of edge specific graphene nanoribbons

Authors: Alexei A. Zakharov, Nikolay A. Vinogradov, Johannes Aprojanz, Christoph Tegenkamp, Claudia Struzzi, Tikhomir Yakimov, Rositsa Yakimova, Valdas Jokubavicius

Abstract: One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality… ▽ More One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality GNR with excellent transport properties [2-7]. Such epitaxial graphene nanoribbons are very important in fundamental science but if GNR are supposed to be used in advanced nanoelectronics, high quality thin (<50nm) nanoribbons should be produced on a large (wafer) scale. Here we present a technique for scalable template growth of high quality GNR on Si-face of SiC(0001) and provide detailed structural information along with transport properties. We succeeded to grow GNR along both [1-100] and [11-20] crystallographic directions. The quality of the grown nanoribbons was confirmed by comprehensive characterization with high resolution STM, dark field LEEM and transport measurements. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Detection of ultra-low concentration NO2 in complex environment using epitaxial graphene sensors

Authors: Christos Melios, Vishal Panchal, Kieran Edmonds, Arseniy Lartsev, Rositsa Yakimova, Olga Kazakova

Abstract: We demonstrate proof-of-concept graphene sensors for environmental monitoring of ultra-low concentration NO2 in complex environments. Robust detection in a wide range of NO2 concentrations, 10-154 ppb, was achieved, highlighting the great potential for graphene-based NO2 sensors, with applications in environmental pollution monitoring, portable monitors, automotive and mobile sensors for a global… ▽ More We demonstrate proof-of-concept graphene sensors for environmental monitoring of ultra-low concentration NO2 in complex environments. Robust detection in a wide range of NO2 concentrations, 10-154 ppb, was achieved, highlighting the great potential for graphene-based NO2 sensors, with applications in environmental pollution monitoring, portable monitors, automotive and mobile sensors for a global real-time monitoring network. The measurements were performed in a complex environment, combining NO2/synthetic air/water vapour, traces of other contaminants and variable temperature in an attempt to fully replicate the environmental conditions of a working sensor. It is shown that the performance of the graphene-based sensor can be affected by co-adsorption of NO2 and water on the surface at low temperatures (<70 C). However, the sensitivity to NO2 increases significantly when the sensor operates at 150 C and the cross-selectivity to water, sulphur dioxide and carbon monoxide is minimized. Additionally, it is demonstrated that single-layer graphene exhibits two times higher carrier concentration response upon exposure to NO2 than bilayer graphene. △ Less

Submitted 29 August, 2018; originally announced August 2018.

Comments: 18 pages

Journal ref: Detection of Ultralow Concentration NO2 in Complex Environment Using Epitaxial Graphene Sensors Christos Melios, Vishal Panchal, Kieran Edmonds, Arseniy Lartsev, Rositsa Yakimova, and Olga Kazakova ACS Sensors 2018

Uniform doping of graphene close to the charge neutrality point by polymer-assisted spontaneous assembly of molecular dopants

Authors: Hans He, Kyung Ho Kim, Andrey Danilov, Domenico Montemurro, Liyang Yu, Yung Woo Park, Floriana Lombardi, Thilo Bauch, Kasper Moth-Poulsen, Tihomir Iakimov, Rositsa Yakimova, Per Malmberg, Christian Müller, Sergey Kubatkin, Samuel Lara-Avila

Abstract: Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions… ▽ More Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC - achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly (methyl-methacrylate) - proceeds via the spontaneous accumulation of dopants at the graphene-polymer interface and by the formation of a charge-transfer complex that yields low-disorder, charge-neutral graphene with carrier mobilities ~70,000 cm2/Vs at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin coating wafer-scale substrates in ambient conditions, opens up a scalable technological route towards expanding the functionality of 2D materials. △ Less

Submitted 15 May, 2018; originally announced May 2018.

Visualisation of edge effects in side-gated graphene nanodevices

Authors: Vishal Panchal, Arseniy Lartsev, Alessandra Manzin, Rositza Yakimova, Alexander Tzalenchuk, Olga Kazakova

Abstract: Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination… ▽ More Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Comments: 4 Figures, 1 Table

Journal ref: Scientific Reports. 4, 5881, 2014

Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point

Authors: A. Nachawaty, M. Yang, W. Desrat, S. Nanot, B. Jabakhanji, D. Kazazis, R. Yakimova, A. Cresti, W. Escoffier, B. Jouault

Abstract: We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; iii) by fitting the magnetoresistances at low temperature. All methods converge to… ▽ More We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; iii) by fitting the magnetoresistances at low temperature. All methods converge to give a disorder amplitude of $(20 \pm 10)$ meV. Because of this relatively low disorder, close to the CNP, at low temperature, the sample resistivity does not exhibit the standard value $\simeq h/4e^2$ but diverges. Moreover, the magnetoresistance curves have a unique ambipolar behavior, which has been systematically observed for all studied samples. This is a signature of both asymmetry in the density of states and in-plane charge transfer. The microscopic origin of this behavior cannot be unambiguously determined. However, we propose a model in which the SiC substrate steps qualitatively explain the ambipolar behavior. △ Less

Submitted 23 August, 2017; originally announced August 2017.

Comments: accepted for publication in Physical Review B

Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC

Authors: Cassandra Chua, Arseniy Lartsev, Jinggao Sui, Vishal Panchal, Reuben Puddy, Carly Richardson, Charles G. Smith, T. J. B. M. Janssen, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin, Malcolm R. Connolly

Abstract: We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphen… ▽ More We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below $T^*$, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder. △ Less

Submitted 31 March, 2017; originally announced March 2017.

Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect

Authors: M. Yang, O. Couturaud, W. Desrat, C. Consejo, D. Kazazis, R. Yakimova, M. Syväjärvi, M. Goiran, J. Béard, P. Frings, M. Pierre, A. Cresti, W. Escoffier, B. Jouault

Abstract: We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $ν=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to the presence o… ▽ More We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $ν=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current. △ Less

Submitted 24 November, 2016; originally announced November 2016.

Comments: accepted in Physical Review Letter in November, 2016

Journal ref: Physical Review Letters 117, 237702 (2016)

Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system

Authors: T. J. B. M. Janssen, S. Rozhko, I. Antonov, A. Tzalenchuk, J. M. Williams, Z. Melhem, H. He, S. Lara-Avila, S. Kubatkin, R. Yakimova

Abstract: We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant a… ▽ More We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant advance in technology has come about as a result of the unique properties of epitaxial graphene on SiC. △ Less

Submitted 16 July, 2015; originally announced July 2015.

Comments: 15 pages, 9 figures

Journal ref: 2D Materials 2 (2015) 035015

Influence of impurity spin dynamics on quantum transport in epitaxial graphene

Authors: Samuel Lara-Avila, Sergey Kubatkin, Oleksiy Kashuba, Joshua A. Folk, Silvia Lüscher, Rositza Yakimova, T. J. B. M. Janssen, Alexander Tzalenchuk, Vladimir Fal'ko

Abstract: Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is cau… ▽ More Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is caused at least in part by spinful scatterers. A non-monotonic dependence of effective decoherence rate on $B_{\parallel}$ reveals the intricate role of scatterers' spin dynamics in forming the interference correction to conductivity, an effect that has gone unnoticed in earlier weak localisation studies △ Less

Submitted 14 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. Lett. 115, 106602 (2015)

Approaching magnetic ordering in graphene materials by FeCl$_3$ intercalation

Authors: T. H. Bointon, I. Khrapach, R. Yakimova, A. V. Shytov, M. F. Craciun, S. Russo

Abstract: We show the successful intercalation of large area (1 cm$^2$) epitaxial few-layer graphene grown on 4H-SiC with FeCl$_3$. Upon intercalation the resistivity of this system drops from an average value of $\approx 200 \ Ω/sq$ to $\approx 16 \ Ω/sq$ at room temperature. The magneto-conductance shows a weak localization feature with a temperature dependence typical of graphene Dirac fermions demonstra… ▽ More We show the successful intercalation of large area (1 cm$^2$) epitaxial few-layer graphene grown on 4H-SiC with FeCl$_3$. Upon intercalation the resistivity of this system drops from an average value of $\approx 200 \ Ω/sq$ to $\approx 16 \ Ω/sq$ at room temperature. The magneto-conductance shows a weak localization feature with a temperature dependence typical of graphene Dirac fermions demonstrating the decoupling into parallel hole gases of each carbon layer composing the FeCl$_3$ intercalated structure. The phase coherence length ($\approx 1.2 μ$m at 280 mK) decreases rapidly only for temperatures higher than the 2-D magnetic ordering in the intercalant layer while it tends to saturate for temperatures lower than the antiferromagnetic ordering between the planes of FeCl$_3$ molecules providing the first evidence for magnetic ordering in the extreme two-dimensional limit of graphene. △ Less

Submitted 16 June, 2015; originally announced June 2015.

Comments: Nano Lett, volume 14, no. 4, pages 1751-1755

Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements

Authors: J. Huang, J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, V. Antonov, T. Yager, S. Lara-Avila, S. Kubatkin, R. Yakimova, R. J. Nicholas

Abstract: We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder… ▽ More We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0 \sim 9.1 \times 10^{10}$ cm$^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations. △ Less

Submitted 14 May, 2015; originally announced May 2015.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 92, 075407 (2015)

The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC

Authors: Tom Yager, Arseniy Lartsev, Rositza Yakimova, Samuel Lara-Avila, Sergey Kubatkin

Abstract: Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content. Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content. △ Less

Submitted 6 February, 2015; originally announced February 2015.

Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Authors: C. J. Chua, M. R. Connolly, A. Lartsev, T. Yager, S. Lara-Avila, S. Kubatkin, S. Kopylov, V. I. Fal'ko, R. Yakimova, R. Pearce, T. J. B. M. Janssen, A. Ya. Tzalenchuk, C. G. Smith

Abstract: We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons… ▽ More We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe. △ Less

Submitted 27 October, 2014; v1 submitted 22 May, 2014; originally announced May 2014.

Comments: 5 pages, 5 figures

Journal ref: Nano Letters, 2014, 14 (6), pp 3369-3373

Size confinement effect in graphene grown on 6H-SiC (0001) substrate

Authors: V. M. Mikoushkin, V. V. Shnitov, A. A. Lebedev, S . P. Lebedev, S. Yu. Nikonov, O. Yu. Vilkov, T. Iakimov, R. Yakimova

Abstract: We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0001). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E1 = 0.3 eV, E2 = 1.2 eV, E3 = 2.6 eV ) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 A) quantum well formed… ▽ More We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0001). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E1 = 0.3 eV, E2 = 1.2 eV, E3 = 2.6 eV ) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 A) quantum well formed by potential relief of the valence bands in the structure graphene/n-SiC. We believe that the quantum well states should be formed also in graphene on dielectric and in suspended graphene. △ Less

Submitted 26 February, 2014; originally announced February 2014.

Comments: 7 pages, 4 figures

Probing of electromagnetic fields on atomic scale by photoelectric phenomena in graphene

Authors: Peter Olbrich, Christoph Drexler, Leonid E. Golub, Sergey N. Danilov, Vadim A. Shalygin, Rositza Yakimova, Samuel Lara-Avila, Sergey Kubatkin, Britta Redlich, Rupert Huber, Sergey D. Ganichev

Abstract: We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that n… ▽ More We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in 2D crystals and other atomic scale structures can be giantly enhanced by a proper combination of the spectral range and substrate material. △ Less

Submitted 1 August, 2013; originally announced August 2013.

Electron-phonon coupling-induced kinks in the sigma band of graphene

Authors: Federico Mazzola, Justin W. Wells, Rositza Yakimova, Soren Ulstrup, Jill A. Miwa, Richard Balog, Marco Bianchi, Mats Leandersson, Johan Adell, Philip Hofmann, T. Balasubramanian

Abstract: Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the sigma band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cut-off in the Fermi-Dirac distribution. They are therefore not expected for the $σ$ band of graphene that has a binding energy of more than 3.5 eV. We argue that the observed kinks are in… ▽ More Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the sigma band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cut-off in the Fermi-Dirac distribution. They are therefore not expected for the $σ$ band of graphene that has a binding energy of more than 3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cut-off in the density of $σ$ states. The existence of the effect suggests a very weak coupling of holes in the $σ$ band not only to the $π$ electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of lambda=1. △ Less

Submitted 1 June, 2013; v1 submitted 27 May, 2013; originally announced May 2013.

Weak localization scattering lengths in epitaxial, and CVD graphene

Authors: A. M. R. Baker, J. A. Alexander-Webber, T. Altebaeumer, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. -T. Lin, L. -J. Li, R. J. Nicholas

Abstract: Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L… ▽ More Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L$_\varphi$, L$_i$, and L$_*$ on carrier density. We find no significant carrier dependence for L$_\varphi$, a weak decrease for L$_i$ with increasing carrier density just beyond a large standard error, and a n$^{-\frac{1}{4}}$ dependence for L$_*$. We demonstrate that currents as low as 0.01\,nA are required in smaller devices to avoid hot-electron artefacts in measurements of the quantum corrections to conductivity. △ Less

Submitted 10 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. B86 235441 (2012)

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

Authors: P. Kühne, V. Darakchieva, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill, R. Yakimova, C. M. Herzinger, J. A. Woollam, M. Schubert, T. Hofmann

Abstract: We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field… ▽ More We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field-dependent measurements we identify that transitions in decoupled graphene mono-layers are governed by polarization mixing selection rules, whereas transitions in coupled graphene mono-layers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau level transitions with free charge carrier magneto-optic plasma oscillations. △ Less

Submitted 28 August, 2013; v1 submitted 4 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. Lett. 111, 077402 (2013)

Standardization of surface potential measurements of graphene domains

Authors: Vishal Panchal, Ruth Pearce, Rositza Yakimova, Alexander Tzalenchuk, Olga Kazakova

Abstract: We compare the three most commonly used scanning probe techniques to obtain a reliable value of the work function in graphene domains of different thickness. The surface potential (SP) of graphene is directly measured in Hall bar geometry via a combination of electrical functional microscopy and spectroscopy techniques, which enables calibrated work function measurements of graphene domains with v… ▽ More We compare the three most commonly used scanning probe techniques to obtain a reliable value of the work function in graphene domains of different thickness. The surface potential (SP) of graphene is directly measured in Hall bar geometry via a combination of electrical functional microscopy and spectroscopy techniques, which enables calibrated work function measurements of graphene domains with values ~4.55+/-0.02 eV and ~4.44+/-0.02eV for single- and bi-layer, respectively. We demonstrate that frequency-modulated Kelvin probe force microscopy (FM-KPFM) provides more accurate measurement of the SP than amplitude-modulated (AM)-KPFM. The discrepancy between experimental results obtained by different techniques is discussed. In addition, we use FM-KPFM for contactless measurements of the specific components of the device resistance. We show a strong non-Ohmic behavior of the electrode-graphene contact resistance and extract the graphene channel resistivity. △ Less

Submitted 2 May, 2013; originally announced May 2013.

Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene

Authors: J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, B. A. Piot, D. K. Maude, R. J. Nicholas

Abstract: We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$)… ▽ More We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $ν=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density. △ Less

Submitted 17 April, 2013; originally announced April 2013.

Non-contact method for measurement of the microwave conductivity of graphene

Authors: L Hao, J Gallop, S Goniszewski, A Gregory, O Shaforost, N Klein, R Yakimova

Abstract: We report a non-contact method for conductivity and sheet resistance measurements of graphene samples using a high Q microwave dielectric resonator perturbation technique, with the aim of fast and accurate measurement of microwave conductivity and sheet resistance of monolayer and few layers graphene samples. The dynamic range of the microwave conductivity measurements makes this technique sensiti… ▽ More We report a non-contact method for conductivity and sheet resistance measurements of graphene samples using a high Q microwave dielectric resonator perturbation technique, with the aim of fast and accurate measurement of microwave conductivity and sheet resistance of monolayer and few layers graphene samples. The dynamic range of the microwave conductivity measurements makes this technique sensitive to a wide variety of imperfections and impurities and can provide a rapid non-contacting characterisation method. Typically the graphene samples are supported on a low-loss dielectric substrate, such as quartz, sapphire or SiC. This substrate is suspended in the near-field region of a small high Q sapphire puck microwave resonator. The presence of the graphene perturbs both centre frequency and Q value of the microwave resonator. The measured data may be interpreted in terms of the real and imaginary components of the permittivity, and by calculation, the conductivity and sheet resistance of the graphene. The method has great sensitivity and dynamic range. Results are reported for graphene samples grown by three different methods: reduced graphene oxide (GO), chemical vapour deposition (CVD) and graphene grown epitaxially on SiC. The latter method produces much higher conductivity values than the others. △ Less

Submitted 4 April, 2013; originally announced April 2013.

Comments: 8 pages, 2 figures and 2 tables

MSC Class: 00

Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene

Authors: A. M. R. Baker J. A. Alexander-Webber, T. Altebaeumer, S. D. McMullan, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. -T Lin, L. -J Li, R. J. Nicholas

Abstract: Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, wi… ▽ More Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by $\sim$40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of $T_{e}^4$ at low temperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidence for enhancement of the energy loss rate due to disorder in CVD samples. △ Less

Submitted 19 December, 2012; originally announced December 2012.

Comments: 8 figs PRB in press

Magnetotransport in graphene on silicon side of SiC

Authors: P. Vasek, L. Smrcka, P. Svoboda, V. Jurka, M. Orlita, D. K. Maude, W. Strupinski, R. Stepniewski, R. Yakimova

Abstract: We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of… ▽ More We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before. △ Less

Submitted 24 April, 2013; v1 submitted 2 October, 2012; originally announced October 2012.

Comments: 5 pages, 6 figures, accepted for publication in the "IOP Journal of Physics: Conference series" as a contribution to the proceedings of the 20th International Conference on "High Magnetic Fields in Semiconductor Physics", HMF 20

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

Authors: T. Maassen, J. J. van den Berg, N. IJbema, F. Fromm, T. Seyller, R. Yakimova, B. J. van Wees

Abstract: We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probab… ▽ More We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question. △ Less

Submitted 14 February, 2012; originally announced February 2012.

Comments: 16 pages, 3 figures, 1 table

Journal ref: Nano Letters 2012

Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Authors: T. J. B. M. Janssen, J. M. Williams, N. E. Fletcher, R. Goebel, A. Tzalenchuk, R. Yakimova, S. Lara-Avila, S. Kubatkin, V. I. Fal'ko

Abstract: The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation… ▽ More The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\rm K}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisation of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget. △ Less

Submitted 14 February, 2012; originally announced February 2012.

Journal ref: Metrologia 49 (2012) 294-306

Terahertz radiation driven chiral edge currents in graphene

Authors: J. Karch, C. Drexler, P. Olbrich, M. Fehrenbacher, M. Hirmer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, B. Birkner, J. Eroms, D. Weiss, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, S. D. Ganichev

Abstract: We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which… ▽ More We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity. △ Less

Submitted 19 July, 2011; originally announced July 2011.

Comments: 4 pages, 4 figure, additional Supplemental Material (3 pages, 1 figure)

Helicity-dependent photocurrents in graphene layers excited by mid-infrared radiation of a CO$_2$-laser

Authors: Chongyun Jiang, V. A. Shalygin, V. Yu. Panevin, S. N. Danilov, M. M. Glazov, R. Yakimova, S. Lara-Avila, S. Kubatkin, S. D. Ganichev

Abstract: We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caus… ▽ More We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caused by the interplay of the circular $ac$ Hall effect and the circular photogalvanic effect. Studying the frequency dependence of the current in graphene layers grown on the SiC substrate we observe that the current exhibits a resonance at frequencies matching the longitudinal optical phonon in SiC. △ Less

Submitted 31 May, 2011; originally announced May 2011.

Diffusion Limited Aggregation with modified local rules

Authors: Bogdan Ranguelov, Desislava Goranova, Vesselin Tonchev, Rositsa Yakimova

Abstract: Results from a modified Diffusion Limited Aggregation (DLA) model are presented. The modifications of the classical DLA model are in the attachment to the cluster rules and in the scheme of particle generation/killing. In the classical DLA model if a particle reaches the growing cluster it sticks to it immediately and irreversibly and then the next particle is released. We will abandon this origin… ▽ More Results from a modified Diffusion Limited Aggregation (DLA) model are presented. The modifications of the classical DLA model are in the attachment to the cluster rules and in the scheme of particle generation/killing. In the classical DLA model if a particle reaches the growing cluster it sticks to it immediately and irreversibly and then the next particle is released. We will abandon this original prerequisite, and by changing the sticking probability to the cluster we will change the diffusion regime towards more kinetic one. For a growing cluster consisting of only one type of particles this variation in the sticking probability is (more or less) a rude violation of the hypothesis for diffusion limitation in the DLA model. Since in a lot of experiments different types of particles are used with different sticking probabilities (e.g. different regimes of attachment), we develop a modified DLA model with two types of particles. The second modification we introduce at that point is a scheme for particle generation/killing we call "second chance" - when a particle is killed after reaching a given limiting distance from the cluster, it is killed and then returned to the point it was originally generated. Thus the model is capable to produce a great variety of growing patterns (fractals, spirals) by changing only a single parameter and we are able to construct a morphological diagram of our generalized DLA model with two different types of particles. △ Less

Submitted 27 May, 2011; originally announced May 2011.

Comments: 5 figures

Graphene, universality of the quantum Hall effect and redefinition of the SI system

Authors: T. J. B. M. Janssen, N. E. Fletcher, R. Goebel, J. M. Williams, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, V. I. Falko

Abstract: The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial… ▽ More The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference of the quantized resistance value within the relative standard uncertainty of our measurement of 8.6\times10-11, being the most stringent test of the universality of the quantum Hall effect in terms of material independence. △ Less

Submitted 15 September, 2011; v1 submitted 20 May, 2011; originally announced May 2011.

Journal ref: New Journal of Physics, 13 (2011) 093026

Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light

Authors: Samuel Lara-Avila, Kasper Moth-Poulsen, Rositza Yakimova, Thomas Bjørnholm, Vladimir Fal'ko, Alexander Tzalenchuk, Sergey Kubatkin

Abstract: Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes relatively high level of electron doping in this material, which is rather difficult to change by electrostatic gating alone. Here we describe one solution to… ▽ More Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes relatively high level of electron doping in this material, which is rather difficult to change by electrostatic gating alone. Here we describe one solution to these problems, allowing both encapsulation and control of the carrier concentration in a wide range. We describe a novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers: a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. Unexposed, the same double layer of polymers works well as capping material, improving the temporal stability and uniformity of the doping level of the sample. By UV exposure of this heterostructure we controlled electrical parameters of graphene in a non-invasive, non-volatile, and reversible way, changing the carrier concentration by a factor of 50. The electronic properties of the exposed SiC/ graphene/polymer heterostructures remained stable over many days at room temperature, but heating the polymers above the glass transition reversed the effect of light. The newly developed photochemical gating has already helped us to improve the robustness (large range of quantizing magnetic field, substantially higher opera- tion temperature and significantly enhanced signal-to-noise ratio due to significantly increased breakdown current) of a graphene resistance standard to such a level that it starts to compete favorably with mature semiconductor heterostructure standards. [2,3] △ Less

Submitted 31 January, 2011; originally announced January 2011.

Comments: Published online in "Advanced Materials", 7 Jan 2011. Category cond-mat.mes-hall

Journal ref: S. Lara-Avila, K. Moth-Poulsen, R. Yakimova, T. Bjørnholm, V. Fal'ko, A. Tzalenchuk, S. Kubatkin, Advanced Materials. (2011)

Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Authors: T. J. B. M. Janssen, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, S. Kopylov, V. Fal'ko

Abstract: We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. O… ▽ More We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10^10 in the Hall resistance quantization measurements. △ Less

Submitted 17 May, 2011; v1 submitted 17 September, 2010; originally announced September 2010.

Journal ref: Phys. Rev. B 83, 233402 (2011)

Circular ac Hall Effect

Authors: J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, S. D. Ganichev

Abstract: We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose si… ▽ More We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed electric and magnetic fields which are however rotating with the light's frequency. △ Less

Submitted 12 August, 2010; originally announced August 2010.

Comments: 4 pages, 5 figures

Quantum Resistance Standard Based on Epitaxial Graphene

Authors: Alexander Tzalenchuk, Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo, Mikael Syväjärvi, Rositza Yakimova, Olga Kazakova, T. J. B. M. Janssen, Vladimir Fal'ko, Sergey Kubatkin

Abstract: We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resis… ▽ More We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics. △ Less

Submitted 7 September, 2009; originally announced September 2009.

Comments: Submitted

Journal ref: Nature Nanotechnology 5, 186 - 189 (2010)

SiC Graphene Suitable For Quantum Hall Resistance Metrology

Authors: Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo, Mikael Syväjärvi, Rositza Yakimova, Vladimir Fal'ko, Alexander Tzalenchuk, Sergey Kubatkin

Abstract: We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several… ▽ More We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene. △ Less

Submitted 7 September, 2009; originally announced September 2009.

Comments: Submitted to Science Brevia 07 July 2009, rejected 10 July 2009 as more appropriate for a more specialized journal

Journal ref: arxiv:0909.1220 and Nature Nanotechnology 5, 186 - 189 (2010)