Showing 1–7 of 7 results for author: Dosenovic, D

Development and optimization of large-scale integration of 2D material in memristors

Authors: Clotilde Ligaud, Lucie Le Van-Jodin, Bruno Reig, Pierre Trousset, Paul Brunet, Michaël Bertucchi, Clémence Hellion, Nicolas Gauthier, Le Van-Hoan, Hanako Okuno, Djordje Dosenovic, Stéphane Cadot, Remy Gassilloud, Matthieu Jamet

Abstract: Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protoc… ▽ More Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protocols are developed for the fabrication of MoS$_2$-based memristors, and the resulting performances are compared. The quality of MoS$_2$ at each stage of the process is characterized by Raman spectroscopy and x-ray photoemission spectroscopy. In the first protocol, the structure of MoS$_2$ is preserved during transfer and patterning processes. However, a polymer layer with a minimum thickness of 3 nm remains at the surface of MoS$_2$ limiting the electrical switching performances. In the second protocol, the contamination layer is completely removed resulting in improved electrical switching performances and reproducibility. Based on physico-chemical and electrical results, the switching mechanism is discussed in terms of conduction through grain boundaries. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Comments: 11 pages, 6 figures

Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe$_2$ using 4D-STEM

Authors: D. Dosenovic, K. Sharma, S. Dechamps, J. -L. Rouviere, Y. Lu, A. Mordant, M. den Hertog, L. Genovese, S. M. -M. Dubois, J. -C. Charlier, M. Jamet, A. Marty, H. Okuno

Abstract: There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types o… ▽ More There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types of defects. A thorough atomic-level analysis is essential to fully understand these mechanisms. In this work, vanadium doped WSe$_2$ monolayer grown by molecular beam epitaxy is investigated using four-dimensional scanning transmission electron microscopy (4D-STEM). Through center of mass-based reconstruction, atomic scale maps are produced, allowing the visualization of both the electric field and the electrostatic potential around individual V atoms. To provide quantitative insights, these results are successfully compared with multislice image simulations based on ab initio calculations, accounting for lens aberrations. Finally, a negative charge around the V dopants is detected as a drop in the electrostatic potential, unambiguously demonstrating that 4D-STEM can be used to detect and to accurately analyze single dopant charge states in semiconducting 2D materials. △ Less

Submitted 13 October, 2023; originally announced October 2023.

Comments: 17 pages, 4 figures and Supporting Information

Giant atomic swirl in graphene bilayers with biaxial heterostrain

Authors: F. Mesple, N. R. Walet, G. Trambly de Laissardière, F. Guinea, D. Dosenovic, H. Okuno, C. Paillet, A. Michon, C. Chapelier, V. T. Renard

Abstract: The study of moiré engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects asso… ▽ More The study of moiré engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects associated with atomic relaxation. Twist is now used routinely to adjust the properties of two-dimensional materials. Here, we investigate a new type of moiré superlattice in bilayer graphene when one layer is biaxially strained with respect to the other - so-called biaxial heterostrain. Scanning tunneling microscopy measurements uncover spiraling electronic states associated with a novel symmetry-breaking atomic reconstruction at small biaxial heterostrain. Atomistic calculations using experimental parameters as inputs reveal that a giant atomic swirl forms around regions of aligned stacking to reduce the mechanical energy of the bilayer. Tight-binding calculations performed on the relaxed structure show that the observed electronic states decorate spiraling domain wall solitons as required by topology. This study establishes biaxial heterostrain as an important parameter to be harnessed for the next step of moiré engineering in van der Waals multilayers. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers

Authors: Djordje Dosenovic, Samuel Dechamps, Celine Vergnaud, Sergej Pasko, Simonas Krotkus, Michael Heuken, Luigi Genovese, Jean-Luc Rouviere, Martien den Hertog, Lucie Le Van-Jodin, Matthieu Jamet, Alain Marty, Hanako Okuno

Abstract: Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be descri… ▽ More Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be described as a patchwork of coalesced domains. Here, we report multi-scale and multistructural analysis on highly oriented epitaxial WS$_2$ and WSe$_2$ monolayers using scanning transmission electron microscopy (STEM) techniques. Characteristic domain junctions are first identified and classified based on the detailed atomic structure analysis using aberration corrected STEM imaging. Mapping orientation, polar direction and phase at the micrometer scale using four-dimensional STEM enabled to access the density and the distribution of the specific domain junctions. Our results validate a readily applicable process for the study of highly oriented epitaxial transition metal dichalcogenides, providing an overview of synthesized materials from large scale down to atomic scale with multiple structural information. △ Less

Submitted 8 June, 2023; originally announced June 2023.

Comments: 22 pages, 6 figures and Supplementary Information

Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures

Authors: K. Abdukayumov, M. Mičica, F. Ibrahim, C. Vergnaud, A. Marty, J. -Y. Veuillen, P. Mallet, I. Gomes de Moraes, D. Dosenovic, A. Wright, J. Tignon, J. Mangeney, A. Ouerghi, V. Renard, F. Mesple, F. Bonell, H. Okuno, M. Chshiev, J. -M. George, H. Jaffrès, S. Dhillon, M. Jamet

Abstract: Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t… ▽ More Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission. △ Less

Submitted 11 May, 2023; originally announced May 2023.

Comments: 26 pages, 6 figures

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Authors: Quentin Guillet, Libor Vojacek, Djordje Dosenovic, Fatima Ibrahim, Herve Boukari, Jing Li, Fadi Choueikani, Philippe Ohresser, Abdelkarim Ouerghi, Florie Mesple, Vincent Renard, Jean-Francois Jacquot, Denis Jalabert, Hanako Okuno, Mairbek Chshiev, Celine Vergnaud, Frederic Bonell, Alain Marty, Matthieu Jamet

Abstract: Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA a… ▽ More Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Comments: 18 pages, 13 figures and Supplemental Material

Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2

Authors: Mário Ribeiro, Giulio Gentile, Alain Marty, Djordje Dosenovic, Hanako Okuno, Céline Vergnaud, Jean-François Jacquot, Denis Jalabert, Danilo Longo, Philippe Ohresser, Ali Hallal, Mairbek Chshiev, Olivier Boulle, Frédéric Bonell, Matthieu Jamet

Abstract: In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or abo… ▽ More In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room-temperature and the ability to grow films over large areas. Here we demonstrate the large-area growth of single-crystal ultrathin films of stoichiometric Fe5GeTe2 on an insulating substrate using molecular beam epitaxy. Magnetic measurements show the persistence of soft ferromagnetism up to room temperature, with a Curie temperature of 293 K, and a weak out-of-plane magnetocrystalline anisotropy. Surface, chemical, and structural characterizations confirm the layer-by-layer growth, 5:1:2 Fe:Ge:Te stoichiometric elementary composition, and single crystalline character of the films. △ Less

Submitted 24 June, 2021; originally announced June 2021.

Journal ref: npj 2D Mater. Appl. 6, 10 (2022)