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Magnetic evolution of Cr$_2$Te$_3$ epitaxially grown on graphene with post-growth annealing
Authors:
Quentin Guillet,
Hervé Boukari,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent T. Renard,
Jean-François Jacquot,
Denis Jalabert,
Céline Vergnaud,
Frédéric Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because the…
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Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because their magnetic properties depend on the amount of self-intercalated Cr atoms between pure CrTe$_2$ layers and the Curie temperature (T$_C$) can reach room temperature for certain compositions. Here, we investigate the evolution of the composition, structural and magnetic properties of thin Cr$_{1.33}$Te$_2$ (Cr$_2$Te$_3$) films epitaxially grown on graphene upon annealing. We observe a transition above 450°C from the Cr$_{1.33}$Te$_2$ phase with perpendicular magnetic anisotropy and a T$_C$ of 180 K to a composition close to Cr$_{1.39}$Te$_2$ with in-plane magnetic anisotropy and a T$_C$ of 240-250 K. This phase remains stable up to 650°C above which a pure Cr film starts to form. This work demonstrates the complex interplay between intercalated Cr, lattice parameters and magnetic properties in Cr$_{1+x}$Te$_2$ compounds.
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Submitted 9 May, 2024;
originally announced May 2024.
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Giant atomic swirl in graphene bilayers with biaxial heterostrain
Authors:
F. Mesple,
N. R. Walet,
G. Trambly de Laissardière,
F. Guinea,
D. Dosenovic,
H. Okuno,
C. Paillet,
A. Michon,
C. Chapelier,
V. T. Renard
Abstract:
The study of moiré engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects asso…
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The study of moiré engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects associated with atomic relaxation. Twist is now used routinely to adjust the properties of two-dimensional materials. Here, we investigate a new type of moiré superlattice in bilayer graphene when one layer is biaxially strained with respect to the other - so-called biaxial heterostrain. Scanning tunneling microscopy measurements uncover spiraling electronic states associated with a novel symmetry-breaking atomic reconstruction at small biaxial heterostrain. Atomistic calculations using experimental parameters as inputs reveal that a giant atomic swirl forms around regions of aligned stacking to reduce the mechanical energy of the bilayer. Tight-binding calculations performed on the relaxed structure show that the observed electronic states decorate spiraling domain wall solitons as required by topology. This study establishes biaxial heterostrain as an important parameter to be harnessed for the next step of moiré engineering in van der Waals multilayers.
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Submitted 25 August, 2023;
originally announced August 2023.
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Observation of Kekulé vortices induced in graphene by hydrogen adatoms
Authors:
Y. Guan,
C. Dutreix,
H. Gonzales-Herrero,
M. M. Ugeda,
I. Brihuega,
M. I. Katsnelson,
O. V. Yazyev,
V. T. Renard
Abstract:
Fractional charges are one of the wonders of the fractional quantum Hall effect, a liquid of strongly correlated electrons in a large magnetic field. Fractional excitations are also anticipated in two-dimensional crystals of non-interacting electrons under time-reversal symmetry, as bound states of a rotating bond order known as Kekulé vortex. However, the physical mechanisms inducing such topolog…
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Fractional charges are one of the wonders of the fractional quantum Hall effect, a liquid of strongly correlated electrons in a large magnetic field. Fractional excitations are also anticipated in two-dimensional crystals of non-interacting electrons under time-reversal symmetry, as bound states of a rotating bond order known as Kekulé vortex. However, the physical mechanisms inducing such topological defects remain elusive, preventing experimental realisations. Here, we report the observation of Kekulé vortices in the local density of states of graphene under time-reversal symmetry. The vortices result from intervalley scattering on chemisorbed hydrogen adatoms and have a purely electronic origin. Their 2π winding is reminiscent of the Berry phase π of the massless Dirac electrons. Remarkably, we observe that point scatterers with different symmetries such as divacancies can also induce a Kekulé bond order without vortex. Therefore, our local-probe study further confirms point defects as versatile building blocks for the control of graphene's electronic structure by kekulé order.
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Submitted 13 July, 2023;
originally announced July 2023.
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Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
Authors:
K. Abdukayumov,
M. Mičica,
F. Ibrahim,
C. Vergnaud,
A. Marty,
J. -Y. Veuillen,
P. Mallet,
I. Gomes de Moraes,
D. Dosenovic,
A. Wright,
J. Tignon,
J. Mangeney,
A. Ouerghi,
V. Renard,
F. Mesple,
F. Bonell,
H. Okuno,
M. Chshiev,
J. -M. George,
H. Jaffrès,
S. Dhillon,
M. Jamet
Abstract:
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t…
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Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission.
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Submitted 11 May, 2023;
originally announced May 2023.
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Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials
Authors:
Quentin Guillet,
Libor Vojacek,
Djordje Dosenovic,
Fatima Ibrahim,
Herve Boukari,
Jing Li,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent Renard,
Jean-Francois Jacquot,
Denis Jalabert,
Hanako Okuno,
Mairbek Chshiev,
Celine Vergnaud,
Frederic Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA a…
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Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface.
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Submitted 6 March, 2023;
originally announced March 2023.
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Elastic properties of moiré lattices in epitaxial two-dimensional materials
Authors:
Alexandre Artaud,
Nicolas Rougemaille,
Sergio Vlaic,
Vincent T. Renard,
Nicolae Atodiresei,
Johann Coraux
Abstract:
Unlike conventional two-dimensional (2D) semiconductor superlattices, moiré patterns in 2D materials are flexible and their electronic, magnetic, optical, and mechanical properties depend on their topography. Within a continuous+atomistic theory treating 2D materials as crystalline elastic membranes, we abandon the flat-membrane scenario usually assumed for these materials and address out-of-plane…
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Unlike conventional two-dimensional (2D) semiconductor superlattices, moiré patterns in 2D materials are flexible and their electronic, magnetic, optical, and mechanical properties depend on their topography. Within a continuous+atomistic theory treating 2D materials as crystalline elastic membranes, we abandon the flat-membrane scenario usually assumed for these materials and address out-of-plane deformations. We confront our predictions to experimental analyses on model systems, epitaxial graphene, and MoS$_2$ on metals and reveal that compression/expansion and bending energies stored in the membrane can compete with adhesion energy, leading to a subtle moiré wavelength selection and the formation of wrinkles.
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Submitted 4 November, 2022;
originally announced November 2022.
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Heterostrain rules the flat-bands in magic-angle twisted graphene layers
Authors:
F. Mesple,
A. Missaoui,
T. Cea,
L. Huder,
G. Trambly de Laissardière,
F. Guinea,
C. Chapelier,
V. T. Renard
Abstract:
The moiré of twisted graphene bilayers can generate flat bands in which charge carriers do not posses enough kinetic energy to escape Coulomb interactions with each other leading to the formation of novel strongly correlated electronic states. This exceptionally rich physics relies on the precise arrangement between the layers.We survey published Scanning Tunnelling Microscope (STM) measurements t…
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The moiré of twisted graphene bilayers can generate flat bands in which charge carriers do not posses enough kinetic energy to escape Coulomb interactions with each other leading to the formation of novel strongly correlated electronic states. This exceptionally rich physics relies on the precise arrangement between the layers.We survey published Scanning Tunnelling Microscope (STM) measurements to prove that near the magic angle, native heterostrain, the relative deformations between the layers, dominates twist in determining the flat bands. This is demonstrated at large doping where electronic correlations have a weak effect and where we also show that tip-induced strain can have a strong influence. In the opposite situation of low doping, we find that electronic correlation further normalize the flat bands in a way that strongly depends on experimental details.
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Submitted 4 December, 2020;
originally announced December 2020.
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Measuring the Berry phase of graphene from wavefront dislocations in Friedel oscillations
Authors:
C. Dutreix,
H. González-Herrero,
I. Brihuega,
M. I. Katsnelson,
C. Chapelier,
V. T. Renard
Abstract:
Electronic band structures dictate the mechanical, optical and electrical properties of crystalline solids. Their experimental determination is therefore of crucial importance for technological applications. While the spectral distribution in energy bands is routinely measured by various techniques, it is more difficult to access the topological properties of band structures such as the Berry phas…
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Electronic band structures dictate the mechanical, optical and electrical properties of crystalline solids. Their experimental determination is therefore of crucial importance for technological applications. While the spectral distribution in energy bands is routinely measured by various techniques, it is more difficult to access the topological properties of band structures such as the Berry phase γ. It is usually thought that measuring the Berry phase requires applying external electromagnetic forces because these allow realizing the adiabatic transport on closed trajectories along which quantum mechanical wave-functions pick up the Berry phase. In graphene, the anomalous quantum Hall effect results from the Berry phase γ = π picked up by massless relativistic electrons along cyclotron orbits and proves the existence of Dirac cones. Contradicting this belief, we demonstrate that the Berry phase of graphene can be measured in absence of any external magnetic field. We observe edge dislocations in the Friedel oscillations formed at hydrogen atoms chemisorbed on graphene. Following Nye and Berry in describing these topological defects as phase singularities of complex fields, we show that the number of additional wave-fronts in the dislocation is a real space measurement of the pseudo spin winding, i.e. graphene's Berry phase. Since the electronic dispersion can also be retrieved from Friedel oscillations, our study establishes the electronic density as a powerful observable to determine both the dispersion relation and topological properties of wavefunctions. This could have profound consequences for the study of the band-structure topology of relativistic and gapped phases in solids.
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Submitted 1 October, 2019;
originally announced October 2019.
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Graphene as a Mechanically Active, Deformable Two-Dimensional Surfactant
Authors:
Sergio Vlaic,
Nicolas Rougemaille,
Alexandre Artaud,
Vincent T Renard,
Loïc Huder,
Jean-Luc Rouviere,
Amina Kimouche,
Benitos Santos,
Andrea Locatelli,
Valérie Guisset,
Philippe David,
Claude Chapelier,
Laurence Magaud,
Benjamin Canals,
Johann Coraux
Abstract:
In crystal growth, surfactants are additive molecules used in dilute amount or as dense, permeable layers to control surface morphologies. Here, we investigate the properties of a strikingly different surfactant: a two-dimensional and covalent layer with close atomic packing, graphene. Using in situ, real time electron microscopy, scanning tunneling microscopy, kinetic Monte Carlo simulations, and…
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In crystal growth, surfactants are additive molecules used in dilute amount or as dense, permeable layers to control surface morphologies. Here, we investigate the properties of a strikingly different surfactant: a two-dimensional and covalent layer with close atomic packing, graphene. Using in situ, real time electron microscopy, scanning tunneling microscopy, kinetic Monte Carlo simulations, and continuum mechanics calculations, we reveal why metallic atomic layers can grow in a two-dimensional manner below an impermeable graphene membrane. Upon metal growth, graphene dynamically opens nanochannels called wrinkles, facilitating mass transport, while at the same time storing and releasing elastic energy via lattice distortions. Graphene thus behaves as a mechanically active, deformable surfactant. The wrinkle-driven mass transport of the metallic layer intercalated between graphene and the substrate is observed for two graphene-based systems, characterized by different physico-chemical interactions, between graphene and the substrate, and between the intercalated material and graphene. The deformable surfactant character of graphene that we unveil should then apply to a broad variety of species, opening new avenues for using graphene as a two-dimensional surfactant forcing the growth of flat films, nanostructures and unconventional crystalline phases.
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Submitted 25 April, 2018;
originally announced April 2018.
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Electronic spectrum of twisted graphene layers under heterostrain
Authors:
L. Huder,
A. Artaud,
T. Le Quang,
G. Trambly de Laissardière,
A. G. M. Jansen,
G. Lapertot,
C. Chapelier,
V. T. Renard
Abstract:
We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with tight-binding calculations to show that small uniaxial heterostrain suppresses Dirac cones and leads to the emergence of flat bands in twisted graphene layers (TGLs). Moreo…
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We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with tight-binding calculations to show that small uniaxial heterostrain suppresses Dirac cones and leads to the emergence of flat bands in twisted graphene layers (TGLs). Moreover, we demonstrate that heterostrain reconstructs much more severely the energy spectrum of TGLs than homostrain for which both layers are strained identically ; a result which should apply to virtually all van der Waals structure opening exciting possibilities for straintronics with 2D materials.
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Submitted 9 March, 2018;
originally announced March 2018.
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Epitaxial electrical contact to graphene on SiC
Authors:
T. Le Quang,
L. Huder,
F. Lipp Bregolin,
A. Artaud,
H. Okuno,
S. Pouget,
N. Mollard,
G. Lapertot,
A. G. M Jansen,
F. Lefloch,
E. F. C Driessen,
C. Chapelier,
V. T. Renard
Abstract:
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a…
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Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in high vacuum. We exploit the combined effect of edge-contact and partially-covalent surface epitaxy between graphene and the metallic carbide to fabricate devices in which low contact-resistance and Josephson effect are observed. Implementing this approach could significantly simplify the realization of large-scale graphene circuits.
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Submitted 11 July, 2017; v1 submitted 17 May, 2017;
originally announced May 2017.
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Metallic behaviour in SOI quantum wells with strong intervalley scattering
Authors:
V. T. Renard,
I. Duchemin,
Y. Niida,
A. Fujiwara,
Y. Hirayama,
K. Takashina
Abstract:
The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had been identified as a key parameter in the observation of the controversial "metallic behaviour" in…
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The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had been identified as a key parameter in the observation of the controversial "metallic behaviour" in two dimensions. However, while it has been recently demonstrated that lifting valley degeneracy can destroy the metallic behaviour, little is known about the role of intervalley scattering. Here, we show that the metallic behaviour can be observed in the presence of strong interval-ley scattering in silicon on insulator (SOI) quantum wells. Analysis of the conductivity in terms of quantum corrections reveals that interactions are much stronger in SOI than in conventional MOSFETs, leading to the metallic behaviour despite the strong intervalley scattering. The prospect of manipulating the valley degree of freedom in materials like AlAs, 1 silicon 2--4 graphene,
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Submitted 27 August, 2015;
originally announced August 2015.
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Valley polarization assisted spin polarization in two dimensions
Authors:
V. T. Renard,
B. A. Piot,
X. Waintal,
G. Fleury,
D. Cooper,
Y. Niida,
D. Tregurtha,
A. Fujiwara,
Y. Hirayama,
K. Takashina
Abstract:
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such phenomena as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons' spin alignment in a magnetic field in silico…
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Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such phenomena as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons' spin alignment in a magnetic field in silicon-on-insulator quantum wells under valley polarisation. In stark contrast to expectations from a non-interacting model, we show experimentally that less magnetic field can be required to fully spin polarise a valley-polarised system than a valley-degenerate one. Furthermore, we show that these observations are quantitatively described by parameter free ab initio quantum Monte Carlo simulations. We interpret the results as a manifestation of the greater stability of the spin and valley degenerate system against ferromagnetic instability and Wigner crystalisation which in turn suggests the existence of a new strongly correlated electron liquid at low electron densities.
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Submitted 5 June, 2015;
originally announced June 2015.
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Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature
Authors:
V. Jousseaume,
J. Cuzzocrea,
N. Bernier,
Vincent Thomas Francois Renard
Abstract:
We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nanotubes grow epitaxially under the few graphene layers. By using a catalyst and gaseous carbon precursor different from those used originally we establish that such unconventional growth mode is not specific to a precise…
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We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nanotubes grow epitaxially under the few graphene layers. By using a catalyst and gaseous carbon precursor different from those used originally we establish that such unconventional growth mode is not specific to a precise choice of catalyst-precursor couple. Furthermore, the composite can be grown using catalyst and temperatures compatible with CMOS processing (T < 450\degree C).
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Submitted 25 January, 2011;
originally announced January 2011.
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Catalyst preparation for CMOS-compatible silicon nanowire synthesis
Authors:
Vincent T. Renard,
M. Jublot,
P. Gergaud,
P. Cherns,
D. Rouchon,
A. Chabli,
V. Jousseaume
Abstract:
Metallic contamination was key to the discovery of semiconductor nanowires, but today it stands in the way of their adoption by the semiconductor industry. This is because many of the metallic catalysts required for nanowire growth are not compatible with standard CMOS (complementary metal oxide semiconductor) fabrication processes. Nanowire synthesis with those metals which are CMOS compatible,…
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Metallic contamination was key to the discovery of semiconductor nanowires, but today it stands in the way of their adoption by the semiconductor industry. This is because many of the metallic catalysts required for nanowire growth are not compatible with standard CMOS (complementary metal oxide semiconductor) fabrication processes. Nanowire synthesis with those metals which are CMOS compatible, such as aluminium and copper, necessitate temperatures higher than 450 C, which is the maximum temperature allowed in CMOS processing. Here, we demonstrate that the synthesis temperature of silicon nanowires using copper based catalysts is limited by catalyst preparation. We show that the appropriate catalyst can be produced by chemical means at temperatures as low as 400 C. This is achieved by oxidizing the catalyst precursor, contradicting the accepted wisdom that oxygen prevents metal-catalyzed nanowire growth. By simultaneously solving material compatibility and temperature issues, this catalyst synthesis could represent an important step towards real-world applications of semiconductor nanowires.
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Submitted 11 January, 2010;
originally announced January 2010.
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Coulomb pseudogap in elastic 2D-2D electron tunneling in a quantizing magnetic field
Authors:
V. G. Popov,
O. N. Makarovskii,
V. Renard,
L. Eaves,
J. -C. Portal
Abstract:
The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing magnetic field induces the Coulomb pseudogap suppressing the electron tunneling at Fermi level. In this paper we firstly present the experimental res…
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The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing magnetic field induces the Coulomb pseudogap suppressing the electron tunneling at Fermi level. In this paper we firstly present the experimental results revealing the pseudogap in the electron tunneling assisted by elastic electron scattering on disorder.
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Submitted 22 August, 2008;
originally announced August 2008.
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Boundary-mediated electron-electron interactions in quantum point contacts
Authors:
Vincent Thomas Francois Renard,
O. A. Tkachenko,
V. A. Tkachenko,
T. Ota,
N. Kumada,
J. -C. Portal,
Y. Hirayama
Abstract:
An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2e^2/h. At the same time a positive magnetoresistance arises at high temperatures. A model accounting for electron-electron interactions mediated by bound- aries (scattering on Friedel oscillations) qualitatively describes the observation. It is supported by numerical…
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An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2e^2/h. At the same time a positive magnetoresistance arises at high temperatures. A model accounting for electron-electron interactions mediated by bound- aries (scattering on Friedel oscillations) qualitatively describes the observation. It is supported by numerical simulation at zero magnetic field.
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Submitted 7 April, 2008; v1 submitted 25 March, 2008;
originally announced March 2008.
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Optical gratings induced by field-free alignment of molecules
Authors:
Arnaud Rouzee,
Vincent Renard,
Stephane Guerin,
Olivier Faucher,
Bruno Lavorel
Abstract:
We analyze the alignment of molecules generated by a pair of crossed ultra-short pump pulses of different polarizations by a technique based on the induced time-dependent gratings. Parallel polarizations yield an intensity grating, while perpendicular polarizations induce a polarization grating. We show that both configurations can be interpreted at moderate intensity as an alignment induced by…
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We analyze the alignment of molecules generated by a pair of crossed ultra-short pump pulses of different polarizations by a technique based on the induced time-dependent gratings. Parallel polarizations yield an intensity grating, while perpendicular polarizations induce a polarization grating. We show that both configurations can be interpreted at moderate intensity as an alignment induced by a single polarized pump pulse. The advantage of the perpendicular polarizations is to give a signal of alignment that is free from the plasma contribution. Experiments on femtosecond transient gratings with aligned molecules were performed in CO2 at room temperature in a static cell and at 30 K in a molecular expansion jet.
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Submitted 20 September, 2006;
originally announced September 2006.
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Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots
Authors:
E. B. Olshanetsky,
Vincent Thomas Francois Renard,
Z. D. Kvon,
J. -C. Portal,
J. -M. Hartmann
Abstract:
In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In sam…
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In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.
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Submitted 21 September, 2006;
originally announced September 2006.
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Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime
Authors:
V. T. Renard,
I. V. Gornyi,
O. A. Tkachenko,
V. A. Tkachenko,
Z. D. Kvon,
E. B. Olshanetsky,
A. I. Toropov,
J. -C. Portal
Abstract:
We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It has been therefore possible to study the crossover between these regimes for both…
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We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It has been therefore possible to study the crossover between these regimes for both the longitudinal conductivity and the Hall effect. We perform a parameter free comparison of our experimental data for the longitudinal conductivity at zero magnetic field, the Hall coefficient, and the magnetoresistivity to the recent theories of interaction-induced corrections to the transport coefficients. A quantitative agreement between these theories and our experimental results has been found.
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Submitted 19 May, 2005;
originally announced May 2005.
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Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime
Authors:
Vincent Thomas Francois Renard,
O. A. Tkachenko,
Ze Don Kvon,
E. B. Olshanetsky,
A. I. Toropov,
J. C Portal
Abstract:
We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore p…
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We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect.
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Submitted 17 December, 2004;
originally announced December 2004.
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Large positive magneto-resistance in high mobility 2D electron gas : interplay of short and long range disorder
Authors:
Vincent T. F Renard,
Ze Don Kvon,
G M Gusev,
J. C Portal
Abstract:
We have observed a large positive quasi-classical magneto-resistance (MR) in a high mobility 2D electron gas in AlGaAs/GaAs heterostructure. The magneto-resistance is non-saturating and increases with magnetic field as $ρ_{xx}\sim B^α (α=0.9-1.2)$. In antidot lattices a non-monotonic MR is observed. We show that in both cases this MR can be qualitatively described in terms of the theory recently…
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We have observed a large positive quasi-classical magneto-resistance (MR) in a high mobility 2D electron gas in AlGaAs/GaAs heterostructure. The magneto-resistance is non-saturating and increases with magnetic field as $ρ_{xx}\sim B^α (α=0.9-1.2)$. In antidot lattices a non-monotonic MR is observed. We show that in both cases this MR can be qualitatively described in terms of the theory recently advanced by Polyakov et al (PRB, 64, 205306 (2001)). Their prediction is that such behavior as we observe may be the consequence of a concurrent existence of short and long range scattering potentials.
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Submitted 9 March, 2004; v1 submitted 7 January, 2004;
originally announced January 2004.
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Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential
Authors:
E. B. Olshanetsky,
V. Renard,
Z. D. Kvon,
J. C. Portal,
N. J. Woods,
J. Zhang,
J. J Harris
Abstract:
We report the observation of a metal-insulator transition (MIT) in a two- dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magnetic field. On going through the MIT we observe the corresponding evolution of the magnetic field induced transition between the insulating phase and the quantum Hall (QH) liquid state in the QH regime. Similar to the previous reports for a GaAs sampl…
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We report the observation of a metal-insulator transition (MIT) in a two- dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magnetic field. On going through the MIT we observe the corresponding evolution of the magnetic field induced transition between the insulating phase and the quantum Hall (QH) liquid state in the QH regime. Similar to the previous reports for a GaAs sample, we find that the critical magnetic field needed to produce the transition becomes zero at the critical electron density corresponding to the zero field MIT. The temperature dependence of the conductivity in a metallic-like state at zero field is compared with the theory of the interaction corrections at intermediate and ballistic regimes $k_{B}Tτ/\hbar\geq1$. The theory yields a good fit for the linear part of the curve. However the slope of that part of $σ_{xx}(T)$ is about two times smaller than that reported in other 2D systems with similar values of $r_s$. At the same time, the recent theory of magnetoresistance due to electron-electron interaction in the case of arbitrary $k_{B}Tτ/\hbar$, smooth disorder and classically strong fields does not seem to be quite adequate for the description of the parabolic magnetoresistance observed in our samples. We attribute these results to the fact that neither of these theories deals with the whole scattering potential in a sample but leaves either its long range or its short range component out of consideration.
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Submitted 14 March, 2003;
originally announced March 2003.
