Showing 1–50 of 56 results for author: Jaffres, H

Theory of spin and orbital charge conversion at the surface states of Bi_{1-x}Sb_x topological insulator

Authors: Armando Pezo, Jean-Marie George, Henri Jaffrès

Abstract: Topological insulators are quantum materials involving Time-reversal protected surface states(TSS) making them appealing candidates for the design of next generation of highly efficient spintronic devices. The very recent observation of large transient spin-charge conversion (SCC) and subsequent powerful THz emission from Co|Bi_{1-x}Sb_x bilayers clearly demonstrates such potentiality and feasibil… ▽ More Topological insulators are quantum materials involving Time-reversal protected surface states(TSS) making them appealing candidates for the design of next generation of highly efficient spintronic devices. The very recent observation of large transient spin-charge conversion (SCC) and subsequent powerful THz emission from Co|Bi_{1-x}Sb_x bilayers clearly demonstrates such potentiality and feasibility for the near future. Amongst the exotic properties appearing in and at the surface of such quantum materials, spin-momentum locking (SML) and Rashba-Edelstein effects remain as key ingredients to effectively convert the spin degree of freedom into a charge or a voltage signal. In this work, we extend our analyses to the quantification of orbital momentum-locking and related orbital charge conversion effects in Bi.85Sb.15 via orbital Rashba-Edelstein effects. In that sense, we will provide some clear theoretical and numerical insights implemented by multi-orbital and multi-layered tight-binding methods (TB) to clarify our recent experimental results obtained by THz-TDS spectroscopy. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Efficient Terahertz Generation from CoPt-based Terahertz Emitters via Orbital-to-Charge Conversion

Authors: Yongshan Liu, Yong Xu, Albert Fert, Henri-Yves Jaffres, Sylvain Eimer, Tianxiao Nie, Xiaoqiang Zhang, Weisheng Zhao

Abstract: Orbitronics devices operate by manipulating orbitally-polarized currents. Recent studies have shown that these orbital currents can be excited by femtosecond laser pulses in ferromagnet as Ni and converted into ultrafast charge current via orbital-to-charge conversion. However, the terahertz emission from orbitronic terahertz emitter based on Ni is still much weaker than the typical spintronic ter… ▽ More Orbitronics devices operate by manipulating orbitally-polarized currents. Recent studies have shown that these orbital currents can be excited by femtosecond laser pulses in ferromagnet as Ni and converted into ultrafast charge current via orbital-to-charge conversion. However, the terahertz emission from orbitronic terahertz emitter based on Ni is still much weaker than the typical spintronic terahertz emitter. Here, we report more efficient light-induced generation of orbital current from CoPt alloy and the orbitronic terahertz emission by CoPt/Cu/MgO shows terahertz radiation comparable to that of efficient spintronic terahertz emitters. By varying the concentration of CoPt alloy, the thickness of Cu, and the capping layer, we confirm that THz emission primarily originates from the orbital accumulation generated within CoPt, propagating through Cu and followed by the subsequent orbital-to-charge conversion from the inverse orbital Rashba-Edelstein effect at the Cu/MgO interface. This study provides strong evidence for the very efficient orbital current generation in CoPt alloy, paving the way to efficient orbital terahertz emitters. △ Less

Submitted 14 February, 2024; originally announced February 2024.

Quantifying the large contribution from orbital Rashba effect to the effective damping-like torque on magnetization

Authors: S. Krishnia, B. Bony, E. Rongione, L. Moreno Vicente-Arche, T. Denneulin, Y. Lu, R. E. Dunin-Borkowski, S. Collin, A. Fert, J. -M. George, N. Reyren, V. Cros, H. Jaffrès

Abstract: The generation of large spin currents, and the associated spin torques, which are at the heart of modern spintronics, have long been achieved by charge-to-spin conversion mechanisms, i.e. the spin Hall effect and/or the Rashba effect, intrinsically linked to a strong spin-orbit coupling. Recently, a novel path has been predicted and observed for achieving significant current-induced torques origin… ▽ More The generation of large spin currents, and the associated spin torques, which are at the heart of modern spintronics, have long been achieved by charge-to-spin conversion mechanisms, i.e. the spin Hall effect and/or the Rashba effect, intrinsically linked to a strong spin-orbit coupling. Recently, a novel path has been predicted and observed for achieving significant current-induced torques originating from light elements, hence possessing a weak spin-orbit interaction. These findings point out to the potential involvement of the orbital counterpart of electrons, namely the orbital Hall and orbital Rashba effects. In this study, we aim at quantifying these orbital-related contributions to the effective torques acting on a thin Co layer in different systems. First, in Pt|Co|Cu|AlOx stacking, we demonstrate a comparable torque strength coming from the conversion due to the orbital Rashba effect at the Cu|AlOx interface and the one from the effective spin Hall effect in bottom Pt|Co system. Secondly, in order to amplify the orbital-to-spin conversion, we investigate the impact of an intermediate Pt layer in Co|Pt|Cu|CuOx. From the Pt thickness dependence of the effective torques determined by harmonic Hall measurements complemented by spin Hall magneto-resistance and THz spectroscopy experiments, we demonstrate that a large orbital Rashba effect is present at the Cu|CuOx interface, leading to a twofold enhancement of the net torques on Co for the optimal Pt thickness. Our findings not only demonstrate the crucial role that orbital currents can play in low-dimensional systems with weak spin-orbit coupling, but also reveal that they enable more energy efficient manipulation of magnetization in spintronic devices. △ Less

Submitted 19 January, 2024; v1 submitted 27 September, 2023; originally announced September 2023.

Comments: 12 pages,6 figures

Orbitronics: Light-induced Orbit Currents in Terahertz Emission Experiments

Authors: Yong Xu, Fan Zhang, Albert Fert, Henri-Yves Jaffres, Yongshan Liu, Renyou Xu, Yuhao Jiang, Houyi Cheng, Weisheng Zhao

Abstract: Orbitronics is based on the use of orbit currents as information carriers. Up to now, orbit currents were created from the conversion of charge or spin currents, and inversely, they could be converted back to charge or spin currents. Here we demonstrate that orbit currents can also be generated by femtosecond light pulses on Ni. In multilayers associating Ni with oxides and nonmagnetic metals such… ▽ More Orbitronics is based on the use of orbit currents as information carriers. Up to now, orbit currents were created from the conversion of charge or spin currents, and inversely, they could be converted back to charge or spin currents. Here we demonstrate that orbit currents can also be generated by femtosecond light pulses on Ni. In multilayers associating Ni with oxides and nonmagnetic metals such as Cu, we detect the orbit currents by their conversion into charge currents and the resulting terahertz emission. We show that the orbit currents extraordinarily predominate the light-induced spin currents in Ni-based systems, whereas only spin currents can be detected with CoFeB-based systems. In addition, the analysis of the time delays of the terahertz pulses leads to relevant information on the velocity and propagation of orbit carriers. Our finding of light-induced orbit currents and our observation of their conversion into charge currents opens new avenues in orbitronics, including the development of orbitronic terahertz devices. △ Less

Submitted 7 July, 2023; originally announced July 2023.

Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures

Authors: K. Abdukayumov, M. Mičica, F. Ibrahim, C. Vergnaud, A. Marty, J. -Y. Veuillen, P. Mallet, I. Gomes de Moraes, D. Dosenovic, A. Wright, J. Tignon, J. Mangeney, A. Ouerghi, V. Renard, F. Mesple, F. Bonell, H. Okuno, M. Chshiev, J. -M. George, H. Jaffrès, S. Dhillon, M. Jamet

Abstract: Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t… ▽ More Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission. △ Less

Submitted 11 May, 2023; originally announced May 2023.

Comments: 26 pages, 6 figures

Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

Authors: E. Rongione, L. Baringthon, D. She, G. Patriarche, R. Lebrun, A. Lemaitre, M. Morassi, N. Reyren, M. Micica, J. Mangeney, J. Tignon, F. Bertran, S. Dhillon, P. Le Fevre, H. Jaffres, J. -M. George

Abstract: The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface… ▽ More The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation. △ Less

Submitted 25 March, 2023; originally announced March 2023.

Comments: 23 pages, 3 figures

Field-free switching of perpendicular magnetization in an ultrathin epitaxial magnetic insulator

Authors: Sajid Husain, Olivier Fayet, Nicholas F. Prestes, Sophie Collin, Florian Godel, Eric Jacquet, Thibaud Denneulin, Rafal E. Dunin-Borkowski, André Thiaville, Manuel Bibes, Nicolas Reyren, Henri Jaffrès, Albert Fert, Jean-Marie George

Abstract: For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT switching generally requires the assistance of an in-plane magnetic field to break the symmetry. Here, we present experiments demonstrating the field-free SOT sw… ▽ More For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT switching generally requires the assistance of an in-plane magnetic field to break the symmetry. Here, we present experiments demonstrating the field-free SOT switching of perpendicularly magnetized layers of the thulium iron garnet (Tm_{3}Fe_{5}O_{12}) magnetic insulator. The polarity of the switching loops, clockwise (CW) or counter-clockwise (CCW), is determined by the direction of the initial current pulses, in contrast with field-assisted switchings in which this polarity is controlled by the direction of the field. After an independent determination of Dzyaloshinskii-Moriya interaction (DMI), we relate the field free switching to the interplay of SOT and DMI and the polarity of the loops to the imprint of a Néel domain wall induced by the first pulse, in agreement with Kerr imaging. Our observation and interpretation of field-free electrical switching of a magnetic insulator is an important milestone for future low power spintronic devices. △ Less

Submitted 26 January, 2023; originally announced January 2023.

Comments: 11 pages, 4 figures

Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin-phonon interactions

Authors: E. Rongione, O. Gueckstock, M. Mattern, O. Gomonay, H. Meer, C. Schmitt, R. Ramos, E. Saitoh, J. Sinova, H. Jaffrès, M. Mičica, J. Mangeney, S. T. B. Goennenwein, S. Geprägs, T. Kampfrath, M. Kläui, M. Bargheer, T. S. Seifert, S. Dhillon, R. Lebrun

Abstract: Antiferromagnetic materials have been proposed as new types of narrowband THz spintronic devices owing to their ultrafast spin dynamics. Manipulating coherently their spin dynamics, however, remains a key challenge that is envisioned to be accomplished by spin-orbit torques or direct optical excitations. Here, we demonstrate the combined generation of broadband THz (incoherent) magnons and narrowb… ▽ More Antiferromagnetic materials have been proposed as new types of narrowband THz spintronic devices owing to their ultrafast spin dynamics. Manipulating coherently their spin dynamics, however, remains a key challenge that is envisioned to be accomplished by spin-orbit torques or direct optical excitations. Here, we demonstrate the combined generation of broadband THz (incoherent) magnons and narrowband (coherent) magnons at 1 THz in low damping thin films of NiO/Pt. We evidence, experimentally and through modelling, two excitation processes of magnetization dynamics in NiO, an off-resonant instantaneous optical spin torque and a strain-wave-induced THz torque induced by ultrafast Pt excitation. Both phenomena lead to the emission of a THz signal through the inverse spin Hall effect in the adjacent heavy metal layer. We unravel the characteristic timescales of the two excitation processes found to be < 50 fs and > 300 fs, respectively, and thus open new routes towards the development of fast opto-spintronic devices based on antiferromagnetic materials. △ Less

Submitted 24 May, 2022; originally announced May 2022.

Large interfacial Rashba interaction and giant spin-orbit torques in atomically thin metallic heterostructures

Authors: S. Krishnia, Y. Sassi, F. Ajejas, N. Reyren, S. Collin, A. Fert, J. -M. George, V. Cros, H. Jaffres

Abstract: The ability of spin-orbit interactions to convert charge current into spin current, most often in the bulk of heavy metal thin films, has been the hallmark of spintronics in the last decade. In this study, we demonstrate how the insertion of light metal element interface profoundly affects both the nature of spin-orbit torque and its efficiency in terms of damping-like ($H_{\text{DL}}$) and field-… ▽ More The ability of spin-orbit interactions to convert charge current into spin current, most often in the bulk of heavy metal thin films, has been the hallmark of spintronics in the last decade. In this study, we demonstrate how the insertion of light metal element interface profoundly affects both the nature of spin-orbit torque and its efficiency in terms of damping-like ($H_{\text{DL}}$) and field-like ($H_{\text{FL}}$) effective fields in ultrathin Co ferromagnet. Indeed, we measure unexpectedly large $H_{\text{FL}}$/$H_{\text{DL}}$ ratio ($\sim$2.5) upon inserting a 1.4 nm thin Al layer in Pt|Co|Al|Pt as compared to a similar stacking including Cu instead of Al. From our modelling, these results strongly evidence the presence of large Rashba interaction at Co|Al interface producing a giant $H_{\text{FL}}$, which was not expected from a metallic interface. The occurrence of such enhanced torques from an interfacial origin is further validated by demonstrating current-induced magnetization reversal showing a significant decrease of the critical current for switching. △ Less

Submitted 24 June, 2022; v1 submitted 17 May, 2022; originally announced May 2022.

Ultrafast spin-charge conversion at SnBi$_2$Te$_4$/Co topological insulator interfaces probed by terahertz emission spectroscopy

Authors: E. Rongione, S. Fragkos, L. Baringthon, J. Hawecker, E. Xenogiannopoulou, P. Tsipas, C. Song, M. Micica, J. Mangeney, J. Tignon, T. Boulier, N. Reyren, R. Lebrun, J. -M. George, P. Lefèvre, S. Dhillon, A. Dimoulas, H. Jaffres

Abstract: Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, we demonstrate sizable THz emission from a nanometric thick topological insul… ▽ More Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, we demonstrate sizable THz emission from a nanometric thick topological insultator (TI)/ferromagnetic junction - SnBi$_2$Te$_4$/Co - specifically designed to avoid bulk band crossing with the TSS at the Fermi level, unlike its parent material Bi$_2$Te$_3$. THz emission time domain spectroscopy (TDS) is used to indicate the TSS contribution to the SCC by investigating the TI thickness and angular dependence of the THz emission. This work illustrates THz emission TDS as a powerful tool alongside angular resolved photoemission spectroscopy (ARPES) methods to investigate the interfacial spintronic properties of TI/ferromagnet bilayers. △ Less

Submitted 16 March, 2022; originally announced March 2022.

Comments: to appear in Advanced Optical materials (02/2022)

Spintronic THz emitters based on transition metals and semi-metals/Pt multilayers

Authors: J. Hawecker, E. Rongione, A. Markou, S. Krishnia, F. Godel, S. Collin, R. Lebrun, J. Tignon, J. Mangeney, T. Boulier, J. -M. George, C. Felser, H. Jaffrès, S. Dhillon

Abstract: Spintronic terahertz (THz) emitters (STE) based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials and control of these interfaces at the nanometer level has become vital to engineer their THz emission properties.In this work, we present studies of the optimization of such structures th… ▽ More Spintronic terahertz (THz) emitters (STE) based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials and control of these interfaces at the nanometer level has become vital to engineer their THz emission properties.In this work, we present studies of the optimization of such structures through a multi-pronged approach, taking advantage of material and interface engineering to enhance the THz spintronic emission. This includes: the application of multi-stacks of HM/FM junctions and their application to trilayer structures, the use of spin-sinks to simultaneously enhance the THz emitted fields and reduce the use of thick Pt layers to reduce optical absorption, and the use of semi-metals to increase the spin polarization and thus the THz emission. Through these approaches, significant enhancements of the THz field can be achieved. Importantly, taking into account the optical absorption permits to elucidate novel phenomena such as the relation between the spin diffusion length and the spin-sink using THz spectroscopy, as well as possibly distinguishing between self and interface spin-to-charge conversion in semi-metals. △ Less

Submitted 16 March, 2022; originally announced March 2022.

Comments: submitted to Applied Physics Letters (2022)

Spin to charge conversion at Rashba-split SrTiO$_3$ interfaces from resonant tunneling

Authors: D. Q. To, T. H. Dang, L. Vila, J. P. Attané, M. Bibes, H. Jaffrès

Abstract: Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba… ▽ More Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces. Calculations involve injection of spin current from a ferromagnetic contact by resonant tunneling into the native Rashba-split resonant levels of the STO triangular quantum well. We compute an asymmetric tunneling electronic transmission yielding a transverse charge current flowing in plane, with a dependence with gate voltage in a very good agreement with existing experimental data. △ Less

Submitted 8 January, 2022; originally announced January 2022.

Comments: 21 pages, 6 figures

Journal ref: Phys. Rev. Research 3, 043170 (2021)

Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure

Authors: Ziqi Zhou, Paul Marcon, Xavier Devaux, Philippe Pigeat, Alexandre Bouché, Sylvie Migot, Abdallah Jaafar, Remi Arras, Michel Vergnat, Lei Ren, Hans Tornatzky, Cedric Robert, Xavier Marie, Jean-Marie George, Henri-Yves Jaffrès, Mathieu Stoffel, Hervé Rinnert, Zhongming Wei, Pierre Renucci, Lionel Calmels, Yuan Lu

Abstract: Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy… ▽ More Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy energy of 0.975mJ/m2 has been obtained at the CoFeB/MgO interface, comparable to that observed in magnetic tunnel junction systems. It is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively prevent the diffusion of the FM atoms into the 2D material. Moreover, the MoS2 ML favors a MgO(001) texture and plays a critical role to establish the large PMA. First principle calculations on a similar Fe/MgO/MoS2 structure reveal that the MgO thickness can modify the MoS2 band structure, from an indirect bandgap with 7ML-MgO to a direct bandgap with 3ML-MgO. Proximity effect induced by Fe results in a splitting of 10meV in the valence band at the Γ point for the 3ML-MgO structure while it is negligible for the 7ML-MgO structure. These results pave the way to develop RT spin optoelectronic devices on 2D transition-metal dichalcogenide materials. △ Less

Submitted 18 June, 2021; originally announced June 2021.

Spin injection efficiency at metallic interfaces probed by THz emission spectroscopy

Authors: Jacques Hawecker, T. H. Dang, Enzo Rongione, James Boust, Sophie Collin, Jean-Marie George, Henri-Jean Drouhin, Yannis Laplace, Romain Grasset, Jingwei Dong, Juliette Mangeney, Jerome Tignon, Henri Jaffrès, Luca Perfetti, Sukhdeep Dhillon

Abstract: Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic interfaces. However, its relation to traditional, steady state, ferromagnetic resonance techniques is poorly understood. Here we investigate nanometric trilayers of Co/X/Pt (X=Ti, Au or Au0:85W0:15) as a function of the 'X' l… ▽ More Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic interfaces. However, its relation to traditional, steady state, ferromagnetic resonance techniques is poorly understood. Here we investigate nanometric trilayers of Co/X/Pt (X=Ti, Au or Au0:85W0:15) as a function of the 'X' layer thickness, where THz emission generated by the inverse spin Hall effect is compared to the Gilbert damping of the ferromagnetic resonance. Through the insertion of the 'X' layer we show that the ultrafast spin current injected in the non-magnetic layer defines a direct spin conductance, whereas the Gilbert damping leads to an effective spin mixing-conductance of the trilayer. Importantly, we show that these two parameters are connected to each other and that spin-memory losses can be modeled via an effective Hamiltonian with Rashba fields. This work highlights that magneto-circuits concepts can be successfully extended to ultrafast spintronic devices, as well as enhancing the understanding of spin-to-charge conversion processes through the complementarity between ultrafast THz spectroscopy and steady state techniques. △ Less

Submitted 17 March, 2021; originally announced March 2021.

Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy

Authors: T. H. Dang, J. Hawecker, E. Rongione, G. Baez Flores, D. Q. To, J. C. Rojas-Sanchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Seneor, M. Bibes, A. Fert, M. Anane, J. -M. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, K. Belashchenko, S. Dhillon, H. Jaffrès

Abstract: Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inv… ▽ More Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pumping for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion. △ Less

Submitted 12 December, 2020; originally announced December 2020.

Comments: 20 pages

Journal ref: Applied Physics Reviews 7, 041409 (2020)

Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states

Authors: T. Guillet, C. Zucchetti, A. Marty, G. Isella, C. Vergnaud, Q. Barbedienne, H. Jaffrès, N. Reyren, J. -M. George, A. Fert, M. Jamet

Abstract: The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in m… ▽ More The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in materials such as Si and Ge that, in their bulk form, possess inversion symmetry (or lack structural inersion asymmetry). The existence of Rashba states could be demonstrated by photoemission spectroscopy at the interface between different metals and Ge(111) and by spin-charge conversion experiments at the Fe/Ge(111) interface even though made of two light elements. In this work, we identify the fingerprint of the Rashba states at the Fe/Ge(111) interface by magnetotransport measurements in the form of a large unidirectional magnetoresistance of up to 0.1 \%. From its temperature dependence, we find that the Rashba energy splitting is larger than in pure Ge(111) subsurface states. △ Less

Submitted 31 October, 2020; originally announced November 2020.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 103, 064411 (2021)

Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field

Authors: Alaa E. Giba, Xue Gao, Mathieu Stoffel, Xavier Devaux, Bo Xu, Xavier Marie, Pierre Renucci, Henri Jaffrès, Jean-Marie George, Guangwei Cong, Zhanguo Wang, Hervé Rinnert, Yuan Lu

Abstract: We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and… ▽ More We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and an appropriate p-doped InGaAs/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we have evidenced a two-step spin relaxation process. The first step occurs when electrons tunnel through the MgO barrier and travel across the GaAs depletion layer. The spin relaxation is dominated by the Dyakonov-Perel mechanism related to the kinetic energy of electrons, which is characterized by a bias dependent Pc. The second step occurs when electrons are captured into QDs prior to their radiative recombination with holes. The temperature dependence of Pc reflects the temperature induced modification of the QDs doping, together with the variation of the ratio between the charge carrier lifetime and the spin relaxation time inside the QDs. The understanding of these spin relaxation mechanisms is essential to improve the performance of spin LED for future spin optoelectronic applications at room temperature under zero applied magnetic field. △ Less

Submitted 14 August, 2020; originally announced August 2020.

Comments: 24 pages, 5 figures

Measurement of the Spin Absorption Anisotropy in Lateral Spin Valves

Authors: Maxen Cosset-Chéneau, Laurent Vila, Gilles Zahnd, Daria Gusakova, Van Tuong Pham, Cécile Grèzes, Xavier Waintal, Alain Marty, Henri Jaffrès, Jean-Philippe Attané

Abstract: The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orientation dependence of the spin absorption inCo, CoFe and NiFe. These experiments allow determining the spin-mixing conductance, an elusivebut fundamenta… ▽ More The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orientation dependence of the spin absorption inCo, CoFe and NiFe. These experiments allow determining the spin-mixing conductance, an elusivebut fundamental parameter of the spin-dependent transport. We show that the obtained valuescannot be understood within a model considering only the Larmor, transverse decoherence and spindiffusion lengths, and rather suggest that the spin-mixing conductance is actually limited by theSharvin conductance. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Lett. 126, 027201 (2021)

Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field

Authors: Fabian Cadiz, Delphine Lagarde, Bingshan Tao, Julien Frougier, Bo Xu, Henri Jaffrès, Zhanguo Wang, Xiufeng Han, Jean Marie George, Hélène Carrere, Andrea Balocchi, Thierry Amand, Xavier Marie, Bernhard Urbaszek, Yuan Lu, Pierre Renucci

Abstract: Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoF… ▽ More Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoFeB/MgO electrode, presenting perpendicular magnetic anisotropy (PMA). We observe a clear asymmetry of the photocurrent measured under respective right and left polarized light that follows the hysteresis of the magnetic layer. The amplitude of this asymmetry at zero magnetic field decreases with increasing temperatures and can be controlled with the bias. Polarization-resolved photoluminescence is detected in parallel while the device is operated as a photodetector. This demonstrates the multifunctional capabilities of the device and gives valuable insights into the spin relaxation of the electrons in the quantum dots. △ Less

Submitted 23 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Materials 4, 124603 (2020)

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

Authors: P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffrès, J. M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X. F. Han, Z. Wang, Y. Lu

Abstract: An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for t… ▽ More An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: Applied Physics Letters, 105, 012404 (2014)

Room Temperature Spin to Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers

Authors: Protyush Sahu, Yifei Yang, Yihong Fan, Henri Jaffres, Jun-Yang Chen, Xavier Devaux, Yannick Fagot-Revurat, Sylvie Migot, Enzo Rongione, Sukdheep Dhillon, Tongxin Chen, Pambiang Abel Dainone, Jean-Marie George, Yuan Lu, Jian-Ping Wang

Abstract: Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two me… ▽ More Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two methods have been employed to study SCC in BSG/CoFeB(5 nm) bilayers with different BSG thicknesses. Firstly, spin pumping is used to generate a spin current in CoFeB and to detect SCC by inverse Edelstein effect. The maximum SCC efficiency (SCE) is measured as large as 0.035 nm in a 6 nm thick BSG sample, which shows a strong decay when tBSG increases due to the increase of BSG surface roughness. The second method is the THz time-domain spectroscopy, which reveals a small tBSG dependence of SCE, validating the occurrence of a pure interface state related SCC. Furthermore, our angle-resolved photoemission spectroscopy data show dispersive two-dimensional surface states that cross the bulk gap until to the Fermi level, strengthening the possibility of SCC due to the amorphous TI states. Our studies provide a new experimental direction towards the search for topological systems in the amorphous solids. △ Less

Submitted 30 July, 2023; v1 submitted 8 November, 2019; originally announced November 2019.

Spin dependent transport characterization in metallic lateral spin valves using 1D and 3D modeling

Authors: P. Laczkowski, M. Cosset-Cheneau, W. Savero-Torres, V. T. Pham, H. Jaffrès, N. Reyren, J. -C. Rojas-Sànchez, A. Marty, L. Vila, J. -M. George, J. -P. Attané

Abstract: We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au base… ▽ More We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au based lateral nano-structures at both $300\,K$ and $77\,K$. Both the analytic modeling and 3D Finite Element Method simulations give consistent results. Combination of both models provides a powerful tool for reliable spin transport characterization in all metallic spin valves and gives an insight into the spin/charge current and spin accumulations 3D distributions in these devices. We provide the necessary ingredients to develop the 3D finite element modeling of diffusive spin transport. △ Less

Submitted 18 March, 2019; v1 submitted 6 March, 2019; originally announced March 2019.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 99, 134436 (2019)

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures

Authors: C. Cerqueira, J. Y. Qin, H. Dang, A. Djeffal, J. -C. Le Breton, M. Hehn, J. -C. Rojas-Sanchez, X. Devaux, S. Suire, S. Migot, P. Schieffer, J. -G. Mussot, P. Laczkowski, A. Anane, S. Petit-Watelot, M. Stoffel, S. Mangin, Z. Liu, B. W. Cheng, X. F. Han, H. Jaffrès, J. -M. George, Y. Lu

Abstract: Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in… ▽ More Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2μm in n-type Si at room temperature. In those experiments, a pure propagating spin-current is generated via ferromagnetic resonance spin-pumping and converted into a measurable voltage by using the inverse spin-Hall effect occurring in the top Pt layer. A systematic study by varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO/Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO/Si interface states appears to be a prerequisite to establish the necessary out-of-equilibrium spin-population in Si under the spin-pumping action. △ Less

Submitted 10 February, 2019; originally announced February 2019.

Journal ref: NanoLett. 19, 90(2019)

Unconventional anomalous Hall effect in 3d/5d multilayers mediated by the nonlocal spin-conductivity

Authors: T. Huong Dang, Q. Barbedienne, Q. D. To, E. Rongione, N. Reyren, F. Godel, S. Collin, J. M. George, H. Jaffrès

Abstract: We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE originates from the opposite sign of the spin-orbit coupling of Pt compared to Ni. Via advanced simulations methods for the description of the spin-current profiles based on the spin-dependent Boltzmann formalism, we extracted… ▽ More We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE originates from the opposite sign of the spin-orbit coupling of Pt compared to Ni. Via advanced simulations methods for the description of the spin-current profiles based on the spin-dependent Boltzmann formalism, we extracted the spin Hall angle (SHA) of Pt and (Co/Ni) as well as the relevant transport parameters. The extracted SHA for Pt, +20%, is opposite to the one of (Co/Ni), giving rise to an effective AHE inversion for thin (Co/Ni) multilayers (N < 17). The spin Hall angle in Pt is found to be larger than the one previously measured in combined spin-pumping inverse spin-Hall effect experiments in a geometry of current perpendicular to plane. Whereas magnetic proximity effects cannot explain the effect, spin-current leakage and anisotropic electron scattering at Pt/(Co,Ni) interfaces fit the experiments. △ Less

Submitted 5 October, 2020; v1 submitted 10 February, 2019; originally announced February 2019.

Comments: 7 pages, 2 figures

Journal ref: Phys. Rev. B 102, 144405 (2020)

ARPES and transport studies of the elemental topological insulator $α$-Sn

Authors: Quentin Barbedienne, Julien Varignon, Nicolas Reyren, Alain Marty, Celine Vergnaud, Matthieu Jamet, Carmen Gomez-Carbonell, Aristide Lemaître, Patrick Le Fèvre, François Bertran, Amina Taleb-Ibrahimi, Henri Jaffrès, Jean-Marie George, Albert Fert

Abstract: Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion clo… ▽ More Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion close to the Fermi level in thin (0\,0\,1)-oriented epitaxially strained films of $α$-Sn, for different film thicknesses as well as for different capping layers (Al, AlO$_x$ and MgO). Indeed a proper capping layer is necessary to be able to use $α$-Sn surface states for spintronics applications. In contrast with free surfaces or surfaces coated with Ag, coating the $α$-Sn surface with Al or AlO$_x$ leads to a drop of the Fermi level below the Dirac point, an important consequence for transport is the presence of bulk states at the Fermi level. $α$-Sn films coated by AlO$_x$ are studied by electrical magnetotransport: despite clear evidence of surface states revealed by Shubnikov-de Haas oscillations, an important part of the magneto-transport properties is governed by "bulk" electronic states attributed to the $Γ8$ band, as suggested by {\it ab-initio} calculations. △ Less

Submitted 30 November, 2018; v1 submitted 30 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. B 98, 195445 (2018)

Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

Authors: F. Cadiz, A. Djeffal, D. Lagarde, A. Balocchi, B. S. Tao, B. Xu, S. H. Liang, M. Stoffel, X. Devaux, H. Jaffres, J. M. George, M. Hehn, S. Mangin, H. Carrere, X. Marie, T. Amand, X. F. Han, Z. G. Wang, B. Urbaszek, Y. Lu, P. Renucci

Abstract: The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi… ▽ More The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field. △ Less

Submitted 12 March, 2018; originally announced March 2018.

Comments: initial version, final version to appear in ACS Nano Letters

Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impurities

Authors: P. Laczkowski, Y. Fu, H. Yang, J. -C. Rojas-Sánchez, P. Noel, V. T. Pham, G. Zahnd, C. Deranlot, S. Collin, C. Bouard, P. Warin, V. Maurel, M. Chshiev, A. Marty, J. -P. Attané, A. Fert, H. Jaffrès, L. Vila, J. -M. George

Abstract: We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pumping technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for… ▽ More We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pumping technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for about 10\% of Ta. In contrast the SHA in AuW does not exceed + 0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than $85\,μΩ.cm$), are promising for spintronic devices exploiting the SHE. △ Less

Submitted 30 August, 2017; originally announced August 2017.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 96, 140405 (2017)

Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions

Authors: T. Huong Dang, D. Quang To, E. Erina, T. L. Hoai Nguyen, V. Safarov, H. Jaffres, H. -J. Drouhin

Abstract: We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in… ▽ More We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect. △ Less

Submitted 25 July, 2017; originally announced July 2017.

Comments: 6 pages, 3 figures, conference MIMS 2017 Moscow (submitted), Journal of Magnetism and Magnetic Materials (JMMM), 2017

Non-local opto-electrical spin injection and detection in germanium at room temperature

Authors: Fabien Rortais, Carlo Zucchetti, Lavinia Ghirardini, Alberto Ferrari, Céline Vergnaud, Julie Widiez, Alain Marty, Jean-Philippe Attané, Henri Jaffrès, Jean-Marie George, Michele Celebrano, Giovanni Isella, Franco Ciccacci, Marco Finazzi, Federico Bottegoni, Matthieu Jamet

Abstract: Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best… ▽ More Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the long electron spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin injection and detection within the telecommunication window. In this letter, we demonstrate injection of pure spin currents (\textit{i.e.} with no associated transport of electric charges) in germanium, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, exploiting the ability of lithographed nanostructures to manipulate the distribution of circularly-polarized light in the semiconductor. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect (ISHE) across a platinum stripe. These results broaden the palette of tools available for the realization of opto-spintronic devices. △ Less

Submitted 29 December, 2016; originally announced December 2016.

Comments: 14 pages and 5 figures

Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces

Authors: E. Lesne, Y. Fu, S. Oyarzun, J. C. Rojas-Sanchez, D. C. Vaz, H. Naganuma, G. Sicoli, J. -P. Attane, M. Jamet, E. Jacquet, J. -M. George, A. Barthelemy, H. Jaffres, A. Fert, M. Bibes, L. Vila

Abstract: The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices,… ▽ More The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES. △ Less

Submitted 21 September, 2016; originally announced September 2016.

Comments: Final version just published in Nature Materials. Contact author for a reprint

Journal ref: Nature Materials (2016); doi:10.1038/nmat4726

Spin transport in molybdenum disulfide multilayer channel

Authors: S. H. Liang, Y. Lu, B. S. Tao, S. Mc-Murtry, G. Wang, X. Marie, P. Renucci, H. Jaffrès, F. Montaigne, D. Lacour, J. -M. George, S. Petit-Watelot, M. Hehn, A. Djeffal, S. Mangin

Abstract: Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% h… ▽ More Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that the hopping via localized states in the contact depletion region plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel for in-plan spin injection. The underestimated long spin diffusion length (~235nm) and large spin lifetime (~46ns) open a new avenue for spintronic applications using multilayer transition metal dichalcogenides. △ Less

Submitted 15 December, 2015; originally announced December 2015.

Perpendicular magnetization reversal in Pt/[Co/Ni]$_3$/Al multilayers via the Spin Hall Effect of Pt

Authors: J. -C. Rojas-Sánchez, P. Laczkowski, J. Sampaio, S. Collin, K. Bouzehouane, N. Reyren, H. Jaffrès, A. Mougin, J. -M. George

Abstract: We experimentally investigate the current-induced magnetization reversal in Pt/[Co/Ni]$_3$/Al multilayers combining the anomalous Hall effect and magneto-optical Kerr effect techniques in crossbar geometry. The magnetization reversal occurs through nucleation and propagation of a domain of opposite polarity for a current density of the order of 0.3 TA/m$^2$. In these experiments we demonstrate a f… ▽ More We experimentally investigate the current-induced magnetization reversal in Pt/[Co/Ni]$_3$/Al multilayers combining the anomalous Hall effect and magneto-optical Kerr effect techniques in crossbar geometry. The magnetization reversal occurs through nucleation and propagation of a domain of opposite polarity for a current density of the order of 0.3 TA/m$^2$. In these experiments we demonstrate a full control of each stage: i)the Ørsted field controls the domain nucleation and ii) domain-wall propagation occurs by spin torque from the Pt spin Hall effect. This scenario requires an in-plane magnetic field to tune the domain wall center orientation along the current for efficient domain wall propagation. Indeed, as nucleated, domain walls are chiral and Néel like due to the interfacial Dzyaloshinskii-Moriya interaction. △ Less

Submitted 23 November, 2015; originally announced November 2015.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett 108, 082406 (2016)

Giant Forward Scattering Asymmetry and Anomalous Tunnel Hall effect at Spin-Orbit-and Exchange-Split Interfaces

Authors: T. Huong Dang, H. Jaffrès, T. L. Hoai Nguyen, H. -J. Drouhin

Abstract: We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of… ▽ More We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of transmission depending on the sign of their incident in-plane wavevector. In particular, the transmission is fully quenched at some points of the Brillouin zone for specific in-plane wavevectors and not for the opposite. Moreover, it is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a 14 ? 14 band k ? p model showing, in addition, corresponding effects in the valence band and highlighting the robustness of the effect, which even persists for a single magnetic electrode. Upon tunneling, electrons undergo an asymmetrical deflection which results in the occurrence of a transverse current, giving rise to a so-called Tunnel Hall Effect. △ Less

Submitted 2 September, 2015; originally announced September 2015.

Journal ref: Phys. Rev B, 060403(R) (2015)

Evaluation of the spin diffusion length of AuW alloy by spin absorption experiments in the limit of large spin-orbit interactions

Authors: P. Laczkowski, H. Jaffrès, W. Savero-Torres, J. -C. Rojas-Sánchez, Y. Fu, N. Reyren, C. Deranlot, L. Notin, C. Beigné, J. -P. Attané, L. Vila, J. -M. George, A. Marty

Abstract: The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current p… ▽ More The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current polarization and the spin accumulation attenuation in the vicinity of the spin absorber must to be precisely taken into account for accurate estimation of $λ_{A}$. We propose an analytical model supported by numerical calculations that allows to extract proper $λ_{A}$ values of spin Hall effect materials. △ Less

Submitted 27 October, 2015; v1 submitted 16 July, 2015; originally announced July 2015.

Spintronics with graphene

Authors: Pierre Seneor, Bruno Dlubak, Marie-Blandine Martin, Abdelmadjid Anane, Henri Jaffres, Albert Fert

Abstract: Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical… ▽ More Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-μm range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents. △ Less

Submitted 13 November, 2014; originally announced November 2014.

Journal ref: MRS Bulletin 37 (2012) 1245

Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector

Authors: S. Liang, T. T. Zhang, P. Barate, J. Frougier, M. Vidal, P. Renucci, B. Xu, H. Jaffrès, J. M. George, X. Devaux, M. Hehn, X. Marie, S. Mangin, H. Yang, A. Hallal, M. Chshiev, T. Amand, H. Liu, D. Liu, X. Han, Z. Wang, Y. Lu

Abstract: We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence pola… ▽ More We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature. △ Less

Submitted 17 April, 2014; originally announced April 2014.

Comments: *Corresponding author: yuan.lu@univ-lorraine.fr

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

Authors: P. Laczkowski, J. -C. Rojas-Sánchez, W. Savero-Torres, H. Jaffrès, N. Reyren, C. Deranlot, L. Notin, C. Beigné, A. Marty, J. -P. Attané, L. Vila, J. -M. George, A. Fert

Abstract: We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length… ▽ More We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced damping, this AuW alloy may find applications in the nearest future. △ Less

Submitted 22 August, 2014; v1 submitted 27 March, 2014; originally announced March 2014.

Journal ref: Applied Physics Letters 104, 142403 (2014)

Spin Pumping and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces

Authors: J. -C. Rojas-Sánchez, N. Reyren, P. Laczkowski, W. Savero, J. -P. Attané, C. Deranlot, M. Jamet, J. -M. George, L. Vila, H. Jaffrès

Abstract: Through combined ferromagnetic resonance, spin-pumping and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface d… ▽ More Through combined ferromagnetic resonance, spin-pumping and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage. △ Less

Submitted 17 March, 2014; v1 submitted 10 December, 2013; originally announced December 2013.

Comments: 6 pages, 3 figures (main text) and 8 pages supplementary. Published with small modifications in Phys. Rev. Lett

Journal ref: Physical Review Letters 112, 106602 (2014)

Spin Pumping and Inverse Spin Hall Effect in Germanium

Authors: J. -C. Rojas-Sánchez, M. Cubukcu, A. Jain, C. Vergnaud, C. Portemont, C. Ducruet, A. Barski, A. Marty, L. Vila, J. -P. Attané, E. Augendre, G. Desfonds, S. Gambarelli, H. Jaffrès, J. -M. George, M. Jamet

Abstract: We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in parti… ▽ More We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $\approx$0.001. △ Less

Submitted 12 May, 2013; originally announced May 2013.

Comments: 34 pages, 14 figures

Irreversible magnetization switching using surface acoustic waves

Authors: Laura Thevenard, Catherine Gourdon, Jean-Yves Duquesne, Emmanuel Peronne, Hans Jürgen von Bardeleben, Henri Jaffres, Sankara Ruttala, Aristide Lemaître

Abstract: An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magne… ▽ More An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magnetic anisotropy parameters through inverse magneto-striction, which triggers precession, and eventually reversal. Using the micromagnetic parameters of a fully characterized layer of the magnetic semiconductor (Ga,Mn)(As,P), we then show that there is a large window of accessible experimental conditions (SAW amplitude/wave-vector, field amplitude/orientation) allowing irreversible switching. As this is a resonant process, the influence of the detuning of the SAW frequency to the magnetic system's eigenfrequency is also explored. Finally, another - non-resonant - switching mechanism is briefly contemplated, and found to be applicable to (Ga,Mn)(As,P): SAW-assisted domain nucleation. In this case, a small perpendicular field is applied opposite the initial magnetization and the passage of the SAW lowers the domain nucleation barrier. △ Less

Submitted 9 January, 2013; originally announced January 2013.

Comments: 11 pages, 4 figures

Spin Transfer Torque with Spin Diffusion in Magnetic Tunnel Junctions

Authors: A Manchon, R. Matsumoto, H. Jaffres, J. Grollier

Abstract: Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin… ▽ More Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a non-conventional thickness dependence of both spin torque components. △ Less

Submitted 22 July, 2012; v1 submitted 23 April, 2012; originally announced April 2012.

Comments: 5 pages, 3 figures

Electrical and thermal spin accumulation in germanium

Authors: A. Jain, C. Vergnaud, J. Peiro, J. C. Le Breton, E. Prestat, L. Louahadj, C. Portemont, C. Ducruet, V. Baltz, A. Marty, A. Barski, P. Bayle-Guillemaud, L. Vila, J. -P. Attané, E. Augendre, H. Jaffrès, J. -M. George, M. Jamet

Abstract: In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germa… ▽ More In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel. △ Less

Submitted 19 April, 2012; originally announced April 2012.

Comments: 7 pages, 3 figures

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Authors: A. Jain, J. -C. Rojas-Sanchez, M. Cubukcu, J. Peiro, J. C. Le Breton, E. Prestat, C. Vergnaud, L. Louahadj, C. Portemont, C. Ducruet, V. Baltz, A. Barski, P. Bayle-Guillemaud, L. Vila, J. -P. Attané, E. Augendre, G. Desfonds, S. Gambarelli, H. Jaffrès, J. -M. George, M. Jamet

Abstract: Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states… ▽ More Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band. △ Less

Submitted 5 January, 2013; v1 submitted 29 March, 2012; originally announced March 2012.

Comments: 5 pages, 4 figures

Journal ref: Physical Review Letters 109, 106603 (2012)

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach

Authors: M. O. Nestoklon, O. Krebs, H. Jaffrès, S. Ruttala, J. -M. George, J. -M. Jancu, P. Voisin

Abstract: Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with t… ▽ More Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-d exchange interaction, cubic anisotropy of heavy-hole dispersion and the low C2v symmetry of the chemical bonds. △ Less

Submitted 6 January, 2012; originally announced January 2012.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 100, 062403 (2012)

Electrical spin injection and detection in Germanium using three terminal geometry

Authors: A. Jain, L. Louahadj, J. Peiro, J. C. Le Breton, C. Vergnaud, A. Barski, C. Beigné, L. Notin, A. Marty, V. Baltz, S. Auffret, E. Augendre, H. Jaffrès, J. M. George, M. Jamet

Abstract: In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interfa… ▽ More In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins. △ Less

Submitted 18 July, 2011; originally announced July 2011.

Comments: 4 pages, 3 figures

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

Authors: S. P. Dash, S. Sharma, J. C. Le Breton, H. Jaffrès, J. Peiro, J. -M. George, A. Lemaître, R. Jansen

Abstract: Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even domi… ▽ More Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even dominate the accumulation and dynamics of spins in the semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous and non-collinear with the injector magnetization. The inverted Hanle effect serves as experimental signature. This interaction needs to be taken into account in the analysis of experimental data, particularly in extracting the spin lifetime and its variation with different parameters (temperature, doping concentration). It produces a broadening of the standard Hanle curve and thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si at room temperature it is shown that the spin lifetime is larger than previously determined, and a new lower bound of 0.29 ns is obtained. The results are expected to be general and occur for spins near a magnetic interface not only in semiconductors but also in metals, organic and carbon-based materials including graphene, and in various spintronic device structures. △ Less

Submitted 1 July, 2011; v1 submitted 9 January, 2011; originally announced January 2011.

Comments: Final version, with text restructured and appendices added (25 pages, 9 figures). To appear in Phys. Rev. B

Journal ref: Phys. Rev. B 84, 054410 (2011)

Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces

Authors: O. Copie, V. Garcia, C. Bodefeld, C. Carretero, M. Bibes, G. Herranz, E. Jacquet, J. -L. Maurice, B. Vinter, S. Fusil, K. Bouzehouane, H. Jaffres, A. Barthelemy

Abstract: Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into a… ▽ More Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than ~6 10^13 cm-2. We discuss the experimental and simulations results in terms of a multi-band carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is ~16 nm, indicating that the electron gas in on the verge of two-dimensionality. △ Less

Submitted 13 May, 2009; originally announced May 2009.

Comments: Accepted for publication in Physical Review Letters

Spin torque and waviness in magnetic multilayers: a bridge between Valet-Fert theory and quantum approaches

Authors: Valentin S. Rychkov, Simone Borlenghi, Henri Jaffres, Albert Fert, Xavier Waintal

Abstract: We develop a simple theoretical framework for transport in magnetic multilayers, based on Landauer-Buttiker scattering formalism and Random Matrix Theory. A simple transformation allows one to go from the scattering point of view to theories expressed in terms of local currents and electrochemical potential. In particular, our theory can be mapped onto the well established classical Valet Fert t… ▽ More We develop a simple theoretical framework for transport in magnetic multilayers, based on Landauer-Buttiker scattering formalism and Random Matrix Theory. A simple transformation allows one to go from the scattering point of view to theories expressed in terms of local currents and electrochemical potential. In particular, our theory can be mapped onto the well established classical Valet Fert theory for collinear systems. For non collinear systems, in the absence of spin-flip scattering, our theory can be mapped onto the generalized circuit theory. We apply our theory to the angular dependance of spin accumulation and spin torque in non-collinear spin valves. △ Less

Submitted 25 February, 2009; originally announced February 2009.

Journal ref: Phys. Rev. Lett. 103, 066602 (2009)

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

Authors: M. Tran, H. Jaffres, C. Deranlot, J. -M. George, A. Fert, A. Miard, A. Lemaitre

Abstract: We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a fe… ▽ More We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results. △ Less

Submitted 4 October, 2011; v1 submitted 27 October, 2008; originally announced October 2008.

Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties

Authors: M. Elsen, H. Jaffres, R. Mattana, L. Thevenard, A. Lemaitre, J. -M. George

Abstract: We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is shown to be associated to the increase of both exchange energy $Δ$$_{exch}$ and hole concentration by reduction of the Mn interstitial atom in the top magnetic… ▽ More We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is shown to be associated to the increase of both exchange energy $Δ$$_{exch}$ and hole concentration by reduction of the Mn interstitial atom in the top magnetic electrode. Through a 6x6 band k.p model, we established general phase diagrams of tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR) \textit{vs.} (Ga,Mn)As Fermi energy (E$_F$) and spin-splitting parameter (B$_G$). This allows to give a rough estimation of the exchange energy $Δ$$_{exch}$=6B$_G$$\simeq$120 meV and hole concentration p$\simeq1.10^{20}$cm$^{-3}$ of (Ga,Mn)As and beyond gives the general trend of TMR and TAMR \textit{vs.} the selected hole band involved in the tunneling transport. △ Less

Submitted 1 June, 2007; originally announced June 2007.

Comments: 6 pages, 4 figures. submitted to Phys. Rev. B