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Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure
Authors:
Ziqi Zhou,
Paul Marcon,
Xavier Devaux,
Philippe Pigeat,
Alexandre Bouché,
Sylvie Migot,
Abdallah Jaafar,
Remi Arras,
Michel Vergnat,
Lei Ren,
Hans Tornatzky,
Cedric Robert,
Xavier Marie,
Jean-Marie George,
Henri-Yves Jaffrès,
Mathieu Stoffel,
Hervé Rinnert,
Zhongming Wei,
Pierre Renucci,
Lionel Calmels,
Yuan Lu
Abstract:
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy…
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Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy energy of 0.975mJ/m2 has been obtained at the CoFeB/MgO interface, comparable to that observed in magnetic tunnel junction systems. It is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively prevent the diffusion of the FM atoms into the 2D material. Moreover, the MoS2 ML favors a MgO(001) texture and plays a critical role to establish the large PMA. First principle calculations on a similar Fe/MgO/MoS2 structure reveal that the MgO thickness can modify the MoS2 band structure, from an indirect bandgap with 7ML-MgO to a direct bandgap with 3ML-MgO. Proximity effect induced by Fe results in a splitting of 10meV in the valence band at the Γ point for the 3ML-MgO structure while it is negligible for the 7ML-MgO structure. These results pave the way to develop RT spin optoelectronic devices on 2D transition-metal dichalcogenide materials.
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Submitted 18 June, 2021;
originally announced June 2021.
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Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering
Authors:
Valerie Brien,
P. Miska,
H. Rinnert,
D. Genève,
P. Pigeat
Abstract:
Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $μ$m IR photoluminescence (PL) intensity, AlN crystalline structure and Er concentration rate. This study first presents how Energy-Dispersive Spectroscopy of X-rays (EDSX) Er Cliff Lorimer sensitivity factor alpha = 5 is obtained by…
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Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $μ$m IR photoluminescence (PL) intensity, AlN crystalline structure and Er concentration rate. This study first presents how Energy-Dispersive Spectroscopy of X-rays (EDSX) Er Cliff Lorimer sensitivity factor alpha = 5 is obtained by combining EDSX and electron probe micro analysis (EPMA) results on reference samples. It secondly presents the relative PL intensities of nanocrystallized samples prepared with identical sputtering parameters as a function of the Er concentration. The structure of crystallites in AlN films is observed by transmission electron microscopy.
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Submitted 26 October, 2020;
originally announced October 2020.
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Optical characterization of nanocrystallized AlN:Er films prepared by magnetron sputtering
Authors:
Valerie Brien,
Manuel Dossot,
Hervé Rinnert,
Sajjad Hussain Sajjad,
Bernard Humbert,
P. Pigeat
Abstract:
In the prospect of understanding the photoluminescence mechanisms of AlN films doped with erbium and targeting photonic applications we have synthesized non doped and Er-doped AlN films with different crystallized nanostructures by using PVD magnetron sputtering. Their crystalline morphology and their visible photoluminescence properties were precisely measured.Due to the weak cross-section absorp…
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In the prospect of understanding the photoluminescence mechanisms of AlN films doped with erbium and targeting photonic applications we have synthesized non doped and Er-doped AlN films with different crystallized nanostructures by using PVD magnetron sputtering. Their crystalline morphology and their visible photoluminescence properties were precisely measured.Due to the weak cross-section absorption of rare earths like erbium, it is necessary to obtain an efficient energy transfer mechanism between the host matrix and the rare earth to obtain high luminescence efficiency. Our strategy is then to elaborate some nanostructures that could introduce additional intermediate electronic levels within the gap thanks to the presence of structural defects (point defects, grain boundaries{\ldots}) and could lead to energy transfer from the AlN matrix to the rare earth.Doped and non-doped AlN films were prepared by radio frequency magnetron sputtering by using different experimental conditions that will be detailed. It will notably be shown how a negative polarization of samples during deposition allows obtaining crystalline morphologies ranging from the classical columnar structure to a highly disordered polycrystalline structure with grains of several nanometers (nearly amorphous). The nanostructures of the films could be categorized in three types: 1) type 1 was nanocolumnar (width of column ~ 15 nm), 2) type 2 was made of short columns (width of column ~ 10 nm) and 3) the last type was made of equiaxed nanocrystallites (size of grains ~3-4 nm).High-resolution photoluminescence spectroscopy was performed to characterize their optical behaviour. The samples were excited by the laser wavelengths at 458, 488 or 514 nm. A broad photoluminescence band was observed centred around 520 nm in columnar samples. In the same energy range, the highly resolved spectra also showed several sharp emission peaks. This fine structure could be attributed to erbium transitions. This fine structure tended to disappear going from type 1 to type 3 samples. Indeed, the relative intensity of the peaks decreased and their full width at half maximum increased. This change could be related to the density of defects that increased when the size of the grains decreased. The photoluminescence properties of the films in the visible range will be discussed in relation with their structure.
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Submitted 19 October, 2020;
originally announced October 2020.
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Structural evolution of the elastic properties in nano-structured AlN film
Authors:
Rafael J. Jimenez-Rioboo,
Valerie Brien,
Philippe Pigeat
Abstract:
A study of the transverse acoustic phonons on nano-structured AlN films has been carried out by using high-resolution micro-Brillouin spectroscopy. Dense films have been deposited by radio frequency (r.f.) magnetron sputtering under ultra high vacuum at room temperature. Films with different morphologies were prepared and investigated by transmission electron microscopy and Brillouin Spectroscopy…
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A study of the transverse acoustic phonons on nano-structured AlN films has been carried out by using high-resolution micro-Brillouin spectroscopy. Dense films have been deposited by radio frequency (r.f.) magnetron sputtering under ultra high vacuum at room temperature. Films with different morphologies were prepared and investigated by transmission electron microscopy and Brillouin Spectroscopy (equiaxed nano-sized, nano-columnar grains and amorphous phase). Results show a dependence of the transverse modes on the nano-structure. The nano-columnar film exhibits two transversal modes as expected for the AlN w{ü}rtzite while the equiaxed nano-sized and the amorphous films only exhibit one isotropic transverse mode as expected in amorphous materials. One important result is that the sound propagation velocity in the AlN amorphous phase is higher than the one in the non-textured nano-crystalline phase. This phenomenon has, however, already been observed in ferroelectric ceramics.
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Submitted 6 October, 2020;
originally announced October 2020.
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Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering
Authors:
Syed Sajjad Hussain,
Valerie Brien,
Hervé Rinnert,
Philippe Pigeat
Abstract:
The effect of magnetron power on the room temperature 1.54 $μ$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium dopi…
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The effect of magnetron power on the room temperature 1.54 $μ$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium doping levels (0.5 and 1.5 atomic %). The structural evolution of the crystallites as a function of the power is followed by transmission electron microscopy. Copyright line will be provided by the publisher 1 Introduction For some time now, rare-earth (RE)-doped semiconductors represent significant potential applications in the field of opto-electronic technology. Part of this technological interest relies on the shielded 4f levels of the RE ions as they give rise to sharp and strong luminescence peaks [1-5]. Among the RE elements, Er is preferred to its counterparts since the Er ions can produce both visible light at 558 nm (green, one of the primary colours) and IR light at 1.54 $μ$m whose spectrum region coincides with the main low-loss region in the absorption spectrum of silica-based optical fibres, combining so potential applications towards photonic devices and towards optical communication devices operating in the infrared domain. These interesting emissions can however only be exploited when placed into host matrixes. On one side, the shielding of the intra 4f levels prevents the shifting of the RE 3+ energy levels and ensures the frequency emission stability. Moreover the intra 4f transitions are parity forbidden for the isolated ions. Matrixes can render the Er 3+ ions optically active, via a relaxation of selection rules due to crystal field effects. As silicon based materials were tested in the 1960s to the 90s with no clear industrial success it was found that the
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Submitted 13 September, 2019;
originally announced September 2019.
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Microstructures Diagram Of Magnetron Sputtered Aln Deposits : Amorphous And Nanostructured Films
Authors:
Valerie Brien,
P. Pigeat
Abstract:
In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron Microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. Their microstructure and chemical composition were studied versus the plasma work…
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In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron Microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. Their microstructure and chemical composition were studied versus the plasma working pressure and the radio frequency power. Systematic analysis of cross views of the films allowed the authors to draw a microstructure/process parameters map. Four microstructural types were distinguished according to the decrease of the deposition rate. One is the well-known columnar microstructure. The second one is made of interrupted columns or fibrous grains. The third one is made of nano-sized particles (size of the particles ranges from 1.7 to 8 nm). The fourth and last microstructure is amorphous. The "deposit morphology-process parameters" correlation is commented on.
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Submitted 4 September, 2019;
originally announced September 2019.
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Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering
Authors:
H. Rinnert,
S. S. Hussain,
Valerie Brien,
P. Pigeat
Abstract:
Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photoluminescence (PL) was studied in relation with the temperature, the Er content and the microstructure…
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Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photoluminescence (PL) was studied in relation with the temperature, the Er content and the microstructure. Steady-state PL, PL excitation spectroscopy and time-resolved PL were performed. Both visible and near infrared PL were obtained at room temperature for the as-deposited samples. It is demonstrated that the PL intensity reaches a maximum for an Er concentration equal to 1 at. % and that the PL efficiency is an increasing function of the magnetron power. Decay time measurements show the important role of defect related non radiative recombination, assumed to be correlated to the presence of grain boundaries. Moreover PL excitation results demonstrate that an indirect excitation of Er 3+ ions occurs for excitation wavelengths lower than 600 nm. It is also suggested that Er ions occupy at least two different sites in the AlN host matrix.
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Submitted 3 April, 2019;
originally announced April 2019.
