Showing 1–14 of 14 results for author: Stoffel, M

How to Data in Datathons

Authors: Carlos Mougan, Richard Plant, Clare Teng, Marya Bazzi, Alvaro Cabrejas-Egea, Ryan Sze-Yin Chan, David Salvador Jasin, Martin Stoffel, Kirstie Jane Whitaker, Jules Manser

Abstract: The rise of datathons, also known as data or data science hackathons, has provided a platform to collaborate, learn, and innovate in a short timeframe. Despite their significant potential benefits, organizations often struggle to effectively work with data due to a lack of clear guidelines and best practices for potential issues that might arise. Drawing on our own experiences and insights from or… ▽ More The rise of datathons, also known as data or data science hackathons, has provided a platform to collaborate, learn, and innovate in a short timeframe. Despite their significant potential benefits, organizations often struggle to effectively work with data due to a lack of clear guidelines and best practices for potential issues that might arise. Drawing on our own experiences and insights from organizing >80 datathon challenges with >60 partnership organizations since 2016, we provide guidelines and recommendations that serve as a resource for organizers to navigate the data-related complexities of datathons. We apply our proposed framework to 10 case studies. △ Less

Submitted 25 October, 2023; v1 submitted 18 September, 2023; originally announced September 2023.

Comments: 37th Conference on Neural Information Processing Systems (NeurIPS 2023) Track on Datasets and Benchmark

Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure

Authors: Ziqi Zhou, Paul Marcon, Xavier Devaux, Philippe Pigeat, Alexandre Bouché, Sylvie Migot, Abdallah Jaafar, Remi Arras, Michel Vergnat, Lei Ren, Hans Tornatzky, Cedric Robert, Xavier Marie, Jean-Marie George, Henri-Yves Jaffrès, Mathieu Stoffel, Hervé Rinnert, Zhongming Wei, Pierre Renucci, Lionel Calmels, Yuan Lu

Abstract: Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy… ▽ More Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy energy of 0.975mJ/m2 has been obtained at the CoFeB/MgO interface, comparable to that observed in magnetic tunnel junction systems. It is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively prevent the diffusion of the FM atoms into the 2D material. Moreover, the MoS2 ML favors a MgO(001) texture and plays a critical role to establish the large PMA. First principle calculations on a similar Fe/MgO/MoS2 structure reveal that the MgO thickness can modify the MoS2 band structure, from an indirect bandgap with 7ML-MgO to a direct bandgap with 3ML-MgO. Proximity effect induced by Fe results in a splitting of 10meV in the valence band at the Γ point for the 3ML-MgO structure while it is negligible for the 7ML-MgO structure. These results pave the way to develop RT spin optoelectronic devices on 2D transition-metal dichalcogenide materials. △ Less

Submitted 18 June, 2021; originally announced June 2021.

Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field

Authors: Alaa E. Giba, Xue Gao, Mathieu Stoffel, Xavier Devaux, Bo Xu, Xavier Marie, Pierre Renucci, Henri Jaffrès, Jean-Marie George, Guangwei Cong, Zhanguo Wang, Hervé Rinnert, Yuan Lu

Abstract: We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and… ▽ More We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and an appropriate p-doped InGaAs/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we have evidenced a two-step spin relaxation process. The first step occurs when electrons tunnel through the MgO barrier and travel across the GaAs depletion layer. The spin relaxation is dominated by the Dyakonov-Perel mechanism related to the kinetic energy of electrons, which is characterized by a bias dependent Pc. The second step occurs when electrons are captured into QDs prior to their radiative recombination with holes. The temperature dependence of Pc reflects the temperature induced modification of the QDs doping, together with the variation of the ratio between the charge carrier lifetime and the spin relaxation time inside the QDs. The understanding of these spin relaxation mechanisms is essential to improve the performance of spin LED for future spin optoelectronic applications at room temperature under zero applied magnetic field. △ Less

Submitted 14 August, 2020; originally announced August 2020.

Comments: 24 pages, 5 figures

Static Detection of Uninitialized Stack Variables in Binary Code

Authors: Behrad Garmany, Martin Stoffel, Robert Gawlik, Thorsten Holz

Abstract: More than two decades after the first stack smashing attacks, memory corruption vulnerabilities utilizing stack anomalies are still prevalent and play an important role in practice. Among such vulnerabilities, uninitialized variables play an exceptional role due to their unpleasant property of unpredictability: as compilers are tailored to operate fast, costly interprocedural analysis procedures a… ▽ More More than two decades after the first stack smashing attacks, memory corruption vulnerabilities utilizing stack anomalies are still prevalent and play an important role in practice. Among such vulnerabilities, uninitialized variables play an exceptional role due to their unpleasant property of unpredictability: as compilers are tailored to operate fast, costly interprocedural analysis procedures are not used in practice to detect such vulnerabilities. As a result, complex relationships that expose uninitialized memory reads remain undiscovered in binary code. Recent vulnerability reports show the versatility on how uninitialized memory reads are utilized in practice, especially for memory disclosure and code execution. Research in recent years proposed detection and prevention techniques tailored to source code. To date, however, there has not been much attention for these types of software bugs within binary executables. In this paper, we present a static analysis framework to find uninitialized variables in binary executables. We developed methods to lift the binaries into a knowledge representation which builds the base for specifically crafted algorithms to detect uninitialized reads. Our prototype implementation is capable of detecting uninitialized memory errors in complex binaries such as web browsers and OS kernels, and we detected 7 novel bugs. △ Less

Submitted 5 July, 2020; originally announced July 2020.

Comments: Published in 2019 European Symposium on Research in Computer Security (ESORICS'19)

Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions

Authors: Xue Gao, Shiheng Liang, Anthony Ferri, Weichuan Huang, Didier Rouxel, Xavier Devaux, Xiao-Guang Li, Hongxin Yang, Mairbek Chshiev, Rachel Desfeux, Antonio Da Costa, Guichao Hu, Mathieu Stoffel, Abir Nachawaty, Chunping Jiang, Zhongming Zeng, Jian-Ping Liu, Hui Yang, Yuan Lu

Abstract: We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 45… ▽ More We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 450% at 10K and 100% at room temperature (RT), which is much higher than that of the pure PVDF based device (70% at 10K and 7% at RT). OMFTJs based on the PVDF:Fe3O4 nanocomposite could open new functionalities in smart multiferroic devices via the interplay of the magnetism of nanoparticle with the ferroelectricity of the organic barrier. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: Applied Physics Letters vol.116 (2020)

Robust Robotic Pouring using Audition and Haptics

Authors: Hongzhuo Liang, Chuangchuang Zhou, Shuang Li, Xiaojian Ma, Norman Hendrich, Timo Gerkmann, Fuchun Sun, Marcus Stoffel, Jianwei Zhang

Abstract: Robust and accurate estimation of liquid height lies as an essential part of pouring tasks for service robots. However, vision-based methods often fail in occluded conditions while audio-based methods cannot work well in a noisy environment. We instead propose a multimodal pouring network (MP-Net) that is able to robustly predict liquid height by conditioning on both audition and haptics input. MP… ▽ More Robust and accurate estimation of liquid height lies as an essential part of pouring tasks for service robots. However, vision-based methods often fail in occluded conditions while audio-based methods cannot work well in a noisy environment. We instead propose a multimodal pouring network (MP-Net) that is able to robustly predict liquid height by conditioning on both audition and haptics input. MP-Net is trained on a self-collected multimodal pouring dataset. This dataset contains 300 robot pouring recordings with audio and force/torque measurements for three types of target containers. We also augment the audio data by inserting robot noise. We evaluated MP-Net on our collected dataset and a wide variety of robot experiments. Both network training results and robot experiments demonstrate that MP-Net is robust against noise and changes to the task and environment. Moreover, we further combine the predicted height and force data to estimate the shape of the target container. △ Less

Submitted 14 October, 2020; v1 submitted 29 February, 2020; originally announced March 2020.

Comments: accepted by IROS2020

Journal ref: 2020 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS)

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures

Authors: C. Cerqueira, J. Y. Qin, H. Dang, A. Djeffal, J. -C. Le Breton, M. Hehn, J. -C. Rojas-Sanchez, X. Devaux, S. Suire, S. Migot, P. Schieffer, J. -G. Mussot, P. Laczkowski, A. Anane, S. Petit-Watelot, M. Stoffel, S. Mangin, Z. Liu, B. W. Cheng, X. F. Han, H. Jaffrès, J. -M. George, Y. Lu

Abstract: Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in… ▽ More Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2μm in n-type Si at room temperature. In those experiments, a pure propagating spin-current is generated via ferromagnetic resonance spin-pumping and converted into a measurable voltage by using the inverse spin-Hall effect occurring in the top Pt layer. A systematic study by varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO/Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO/Si interface states appears to be a prerequisite to establish the necessary out-of-equilibrium spin-population in Si under the spin-pumping action. △ Less

Submitted 10 February, 2019; originally announced February 2019.

Journal ref: NanoLett. 19, 90(2019)

Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

Authors: F. Cadiz, A. Djeffal, D. Lagarde, A. Balocchi, B. S. Tao, B. Xu, S. H. Liang, M. Stoffel, X. Devaux, H. Jaffres, J. M. George, M. Hehn, S. Mangin, H. Carrere, X. Marie, T. Amand, X. F. Han, Z. G. Wang, B. Urbaszek, Y. Lu, P. Renucci

Abstract: The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi… ▽ More The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field. △ Less

Submitted 12 March, 2018; originally announced March 2018.

Comments: initial version, final version to appear in ACS Nano Letters

On the nature of tunable hole g-factors in quantum dots

Authors: N. Ares, V. N. Golovach, G. Katsaros, M. Stoffel, F. Fournel, L. I. Glazman, O. G. Schmidt, S. De Franceschi

Abstract: Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers dege… ▽ More Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers degeneracy in the nanocrystal by altering the mixing between the heavy and the light holes. We show that the relative displacement between the heavy- and light-hole wave functions, occurring upon application of the electric field, has an effect on the mixing strength and leads to a strong non-monotonic modulation of the g-factor. Despite intensive studies of the g-factor since the late 50's, this mechanism of g-factor control has been largely overlooked in the literature. △ Less

Submitted 2 August, 2012; originally announced August 2012.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. Lett. 110, 046602 (2013)

Observation of spin-selective tunneling in SiGe nanocrystals

Authors: G. Katsaros, V. N. Golovach, P. Spathis, N. Ares, M. Stoffel, F. Fournel, O. G. Schmidt, L. I. Glazman, S. De Franceschi

Abstract: Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be… ▽ More Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band. △ Less

Submitted 20 July, 2011; originally announced July 2011.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. Lett. 107, 246601 (2011)

Low-pass Genomewide Sequencing and Variant Imputation Using Identity-by-descent in an Isolated Human Population

Authors: A Gusev, MJ Shah, EE Kenny, A Ramachandran, JK Lowe, J Salit, CC Lee, EC Levandowsky, TN Weaver, QC Doan, HE Peckham, SF McLaughlin, MR Lyons, VN Sheth, M Stoffel, FM De La Vega, JM Friedman, JL Breslow, I Pe'er

Abstract: Whole-genome sequencing in an isolated population with few founders directly ascertains variants from the population bottleneck that may be rare elsewhere. In such populations, shared haplotypes allow imputation of variants in unsequenced samples without resorting to statistical methods, as in studies of outbred cohorts. We focus on an isolated population cohort from the Pacific Island of Kosrae,… ▽ More Whole-genome sequencing in an isolated population with few founders directly ascertains variants from the population bottleneck that may be rare elsewhere. In such populations, shared haplotypes allow imputation of variants in unsequenced samples without resorting to statistical methods, as in studies of outbred cohorts. We focus on an isolated population cohort from the Pacific Island of Kosrae, Micronesia, where we previously collected SNP array and rich phenotype data for the majority of the population. We report identification of long regions with haplotypes co-inherited between pairs of individuals and methodology to leverage such shared genetic content for imputation. Our estimates show that sequencing as few as 40 personal genomes allows for imputation in up to 60% of the 3,000-person cohort at the average locus. We ascertained a pilot data-set of whole-genome sequences from seven Kosraean individuals, with average 5X coverage. This dataset identified 5,735,306 unique sites of which 1,212,831 were previously unknown. Additionally, these Kosraen variants are unusually enriched for alleles that are rare in other populations when compared to geographic neighbors. We were able to use the presence of shared haplotypes between the seven individuals to estimate imputation accuracy of known and novel variants and achieved levels of 99.6% and 97.3%, respectively. This study presents the first whole-genome analysis of a homogenous isolate population with emphasis on rare variant inference. △ Less

Submitted 17 February, 2011; originally announced February 2011.

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

Authors: G. Katsaros, P. Spathis, M. Stoffel, F. Fournel, M. Mongillo, V. Bouchiat, F. Lefloch, A. Rastelli, O. G. Schmidt, S. De Franceschi

Abstract: The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made b… ▽ More The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence. △ Less

Submitted 11 May, 2010; originally announced May 2010.

Comments: 35 pages, 6 figures

Strain selectivity of SiGe wet chemical etchants

Authors: M. Stoffel, A. Malachias, T. Merdzhanova, F. Cavallo, G. Isella, D. Chrastina, H. von Kaenel, A. Rastelli, O. G. Schmidt

Abstract: We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants… ▽ More We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants are isotropic with no preferential etching of particular facets. △ Less

Submitted 28 January, 2008; originally announced January 2008.

Comments: 13 pages, 4 figures, regular paper

Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering

Authors: A. Malachias, T. U. Schulli, G. Medeiros-Ribeiro, M. Stoffel, O. G. Schmidt, T. H. Metzger, R. Magalhaes-Paniago

Abstract: X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limite… ▽ More X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limited region of the islands where the stoichiometry is close to Si0.5Ge0.5. △ Less

Submitted 25 November, 2004; originally announced November 2004.

Comments: 13 pages, 4 figures