-
Towards Neuromorphic Processing for Next-Generation MU-MIMO Detection
Authors:
G. N. Katsaros,
J. C. De Luna Ducoing,
Konstantinos Nikitopoulos
Abstract:
Upcoming physical layer (PHY) processing solutions, leveraging multiple-input multiple-output (MIMO) advances, are expected to support broad transmission bandwidths and the concurrent transmission of multiple information streams. However, the inherent computational complexities of conventional MIMO PHY algorithms pose significant practical challenges, not only in meeting the strict real-time proce…
▽ More
Upcoming physical layer (PHY) processing solutions, leveraging multiple-input multiple-output (MIMO) advances, are expected to support broad transmission bandwidths and the concurrent transmission of multiple information streams. However, the inherent computational complexities of conventional MIMO PHY algorithms pose significant practical challenges, not only in meeting the strict real-time processing latency requirements but also in maintaining practical computational power consumption budgets. Novel computing paradigms, such as neuromorphic computing, promise substantial gains in computational power efficiency. However, it is unknown whether it is feasible or efficient to realize practical PHY algorithms on such platforms. In this work, we evaluate for the first time the potential of neuromorphic computing principles for multi-user (MU)-MIMO detection. In particular, we developed the first spiking-based MU-MIMO simulator that meets practical error-rate targets, suggesting power gains of at least one order of magnitude when realized on actual neuromorphic hardware, compared to conventional processing platforms. Finally, we discuss the challenges and future research directions that could unlock practical neuromorphic-based MU-MIMO systems and revolutionize PHY power efficiency.
△ Less
Submitted 23 August, 2024;
originally announced August 2024.
-
Microwave driven singlet-triplet qubits enabled by site-dependent g-tensors
Authors:
Jaime Saez-Mollejo,
Daniel Jirovec,
Yona Schell,
Josip Kukucka,
Stefano Calcaterra,
Daniel Chrastina,
Giovanni Isella,
Maximilian Rimbach-Russ,
Stefano Bosco,
Georgios Katsaros
Abstract:
Hole spin qubits are rapidly emerging as the workhorse of semiconducting quantum processors because of their large spin-orbit interaction, enabling fast all-electric operations at low power. However, spin-orbit interaction also causes non-uniformities in devices, resulting in locally varying qubit energies and site-dependent anisotropies. While these anisotropies can be used to drive single-spins,…
▽ More
Hole spin qubits are rapidly emerging as the workhorse of semiconducting quantum processors because of their large spin-orbit interaction, enabling fast all-electric operations at low power. However, spin-orbit interaction also causes non-uniformities in devices, resulting in locally varying qubit energies and site-dependent anisotropies. While these anisotropies can be used to drive single-spins, if not properly harnessed, they can hinder the path toward large-scale quantum processors. Here, we report on a qubit in planar germanium, where we control the anisotropy of two spins in a double quantum dot. By characterising microwave-driven singlet-triplet qubits, we show two distinct operating regimes depending on the magnetic field direction. For in-plane fields, the two spins are largely anisotropic, enabling to measure all the available transitions; coherence times exceeding 3 $μ$s are extracted. For out-of-plane fields, they have an isotropic response but preserve the substantial energy difference required to address the singlet-triplet qubit. Even in this field direction, where the qubit lifetime is strongly affected by nuclear spins, we find 400 ns coherence times. Our work adds a valuable tool to investigate and harness the anisotropy of spin qubits and can be implemented in any large-scale NxN device, facilitating the path towards scalable quantum processors.
△ Less
Submitted 6 August, 2024;
originally announced August 2024.
-
Subgap-state-mediated transport in superconductor--semiconductor hybrid islands: Weak and strong coupling regimes
Authors:
Marco Valentini,
Rubén Seoane Souto,
Maksim Borovkov,
Peter Krogstrup,
Yigal Meir,
Martin Leijnse,
Jeroen Danon,
Georgios Katsaros
Abstract:
Superconductor-semiconductor hybrid systems play a crucial role in realizing nanoscale quantum devices, including hybrid qubits, Majorana bound states, and Kitaev chains. For such hybrid devices, subgap states play a prominent role in their operation. In this work, we study such subgap states via Coulomb and tunneling spectroscopy through a superconducting island defined in a semiconductor nanowir…
▽ More
Superconductor-semiconductor hybrid systems play a crucial role in realizing nanoscale quantum devices, including hybrid qubits, Majorana bound states, and Kitaev chains. For such hybrid devices, subgap states play a prominent role in their operation. In this work, we study such subgap states via Coulomb and tunneling spectroscopy through a superconducting island defined in a semiconductor nanowire fully coated by a superconductor. We systematically explore regimes ranging from an almost decoupled island to the open configuration. In the weak coupling regime, the experimental observations are very similar in the absence of a magnetic field and when one flux quantum is piercing the superconducting shell. Conversely, in the strong coupling regime, significant distinctions emerge between the two cases. We ascribe this different behavior to the existence of subgap states at one flux quantum, which become observable only for sufficiently strong coupling to the leads. We support our interpretation using a simple model to describe transport through the island. Our study highlights the importance of studying a broad range of tunnel couplings for understanding the rich physics of hybrid devices.
△ Less
Submitted 6 July, 2024;
originally announced July 2024.
-
Strong Charge-Photon Coupling in Planar Germanium Enabled by Granular Aluminium Superinductors
Authors:
Marián Janík,
Kevin Roux,
Carla Borja Espinosa,
Oliver Sagi,
Abdulhamid Baghdadi,
Thomas Adletzberger,
Stefano Calcaterra,
Marc Botifoll,
Alba Garzón Manjón,
Jordi Arbiol,
Daniel Chrastina,
Giovanni Isella,
Ioan M. Pop,
Georgios Katsaros
Abstract:
High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is…
▽ More
High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is challenging, as their inductance and, therefore, impedance at high values are difficult to control. Here we have integrated a granular aluminium resonator, having a characteristic impedance exceeding the resistance quantum, with a germanium double quantum dot and demonstrate strong charge-photon coupling with a rate of $g_\text{c}/2π= (566 \pm 2)$ MHz. This was achieved due to the realisation of a wireless ohmmeter, which allows \emph{in situ} measurements during film deposition and, therefore, control of the kinetic inductance of granular aluminium films. Reproducible fabrication of circuits with impedances (inductances) exceeding 13 k$Ω$ (1 nH per square) is now possible. This broadly applicable method opens the path for novel qubits and high-fidelity, long-distance two-qubit gates.
△ Less
Submitted 3 July, 2024;
originally announced July 2024.
-
A gate tunable transmon qubit in planar Ge
Authors:
Oliver Sagi,
Alessandro Crippa,
Marco Valentini,
Marian Janik,
Levon Baghumyan,
Giorgio Fabris,
Lucky Kapoor,
Farid Hassani,
Johannes Fink,
Stefano Calcaterra,
Daniel Chrastina,
Giovanni Isella,
Georgios Katsaros
Abstract:
Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junctio…
▽ More
Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junction is then integrated into an Xmon circuit and capacitively coupled to a transmission line resonator. We showcase the qubit tunability in a broad frequency range with resonator and two-tone spectroscopy. Time-domain characterizations reveal energy relaxation and coherence times up to 75 ns. Our results, combined with the recent advances in the spin qubit field, pave the way towards novel hybrid and protected qubits in a group IV, CMOS-compatible material.
△ Less
Submitted 25 March, 2024;
originally announced March 2024.
-
Tuning the Josephson diode response with an ac current
Authors:
Rubén Seoane Souto,
Martin Leijnse,
Constantin Schrade,
Marco Valentini,
Georgios Katsaros,
Jeroen Danon
Abstract:
Josephson diodes are superconducting elements that show an asymmetry in the critical current depending on the direction of the current. Here, we theoretically explore how an alternating current bias can tune the response of such a diode. We show that for slow driving there is always a regime where the system can only carry zero-voltage dc current in one direction, thus effectively behaving as an i…
▽ More
Josephson diodes are superconducting elements that show an asymmetry in the critical current depending on the direction of the current. Here, we theoretically explore how an alternating current bias can tune the response of such a diode. We show that for slow driving there is always a regime where the system can only carry zero-voltage dc current in one direction, thus effectively behaving as an ideal Josephson diode. Under fast driving, the diode efficiency is also tunable, although the ideal regime cannot be reached in this case. We also investigate the residual dissipation due to the time-dependent current bias and show that it remains small. All our conclusions are solely based on the critical current asymmetry of the junction, and are thus compatible with any Josephson diode.
△ Less
Submitted 14 December, 2023;
originally announced December 2023.
-
Strong hole-photon coupling in planar Ge: probing the charge degree and Wigner molecule states
Authors:
Franco De Palma,
Fabian Oppliger,
Wonjin Jang,
Stefano Bosco,
Marián Janík,
Stefano Calcaterra,
Georgios Katsaros,
Giovanni Isella,
Daniel Loss,
Pasquale Scarlino
Abstract:
Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as frontrunners for future hole-based quantum processors. Notably, the large spin-orbit interaction of holes offers rapid, coherent electrical control of spin states, which can be further beneficial for interfacing hole spins to microwave photons in superconducting circuits via coherent charge-photon coupling.…
▽ More
Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as frontrunners for future hole-based quantum processors. Notably, the large spin-orbit interaction of holes offers rapid, coherent electrical control of spin states, which can be further beneficial for interfacing hole spins to microwave photons in superconducting circuits via coherent charge-photon coupling. Here, we present strong coupling between a hole charge qubit, defined in a double quantum dot (DQD) in a planar Ge, and microwave photons in a high-impedance ($Z_\mathrm{r} = 1.3 ~ \mathrm{k}Ω$) superconducting quantum interference device (SQUID) array resonator. Our investigation reveals vacuum-Rabi splittings with coupling strengths up to $g_{0}/2π= 260 ~ \mathrm{MHz}$, and a cooperativity of $C \sim 100$, dependent on DQD tuning, confirming the strong charge-photon coupling regime within planar Ge. Furthermore, utilizing the frequency tunability of our resonator, we explore the quenched energy splitting associated with strongly-correlated Wigner molecule (WM) states that emerge in Ge QDs. The observed enhanced coherence of the WM excited state signals the presence of distinct symmetries within related spin functions, serving as a precursor to the strong coupling between photons and spin-charge hybrid qubits in planar Ge. This work paves the way towards coherent quantum connections between remote hole qubits in planar Ge, required to scale up hole-based quantum processors.
△ Less
Submitted 31 October, 2023;
originally announced October 2023.
-
Automated long-range compensation of an rf quantum dot sensor
Authors:
Joseph Hickie,
Barnaby van Straaten,
Federico Fedele,
Daniel Jirovec,
Andrea Ballabio,
Daniel Chrastina,
Giovanni Isella,
Georgios Katsaros,
Natalia Ares
Abstract:
Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity. However, this proximity also means that the operation of the device affects, in turn, the sensor tuning and ultimately the readout sensitivity. We present an appro…
▽ More
Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity. However, this proximity also means that the operation of the device affects, in turn, the sensor tuning and ultimately the readout sensitivity. We present an approach for compensating for this cross-talk effect allowing for the gate voltages of the measured device to be swept in a 1 V x 1 V window while maintaining a sensor configuration chosen by a Bayesian optimiser. Our algorithm is a key contribution to the suite of fully automated solutions required for the operation of large quantum device architectures.
△ Less
Submitted 3 October, 2023;
originally announced October 2023.
-
Parity-conserving Cooper-pair transport and ideal superconducting diode in planar Germanium
Authors:
Marco Valentini,
Oliver Sagi,
Levon Baghumyan,
Thijs de Gijsel,
Jason Jung,
Stefano Calcaterra,
Andrea Ballabio,
Juan Aguilera Servin,
Kushagra Aggarwal,
Marian Janik,
Thomas Adletzberger,
Rubén Seoane Souto,
Martin Leijnse,
Jeroen Danon,
Constantin Schrade,
Erik Bakkers,
Daniel Chrastina,
Giovanni Isella,
Georgios Katsaros
Abstract:
Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the…
▽ More
Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a $\sin \left( 2 \varphi \right)$ CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on a silicon technology compatible platform.
△ Less
Submitted 16 November, 2023; v1 submitted 12 June, 2023;
originally announced June 2023.
-
All rf-based tuning algorithm for quantum devices using machine learning
Authors:
Barnaby van Straaten,
Federico Fedele,
Florian Vigneau,
Joseph Hickie,
Daniel Jirovec,
Andrea Ballabio,
Daniel Chrastina,
Giovanni Isella,
Georgios Katsaros,
Natalia Ares
Abstract:
Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurem…
▽ More
Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurements. We demonstrate an algorithm that automatically tunes double quantum dots using only radio-frequency reflectometry. Exploiting the high bandwidth of radio-frequency measurements, the tuning was completed within a few minutes without prior knowledge about the device architecture. Our results show that it is possible to eliminate the need for transport measurements for quantum dot tuning, paving the way for more scalable device architectures.
△ Less
Submitted 8 November, 2022;
originally announced November 2022.
-
Majorana-like Coulomb spectroscopy in the absence of zero bias peaks
Authors:
Marco Valentini,
Maksim Borovkov,
Elsa Prada,
Sara Marti-Sanchez,
Marc Botifoll,
Andrea Hofmann,
Jordi Arbiol,
Ramon Aguado,
Pablo San-Jose,
Georgios Katsaros
Abstract:
Hybrid semiconductor-superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes (MZMs). However, multiple claims of Majorana detection, based on either tunneling or Coulomb blockade (CB) spectroscopy, remain disputed. Here we devise an experimental protocol that allows to perform both types of measurements on the same hybrid island by adjusting i…
▽ More
Hybrid semiconductor-superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes (MZMs). However, multiple claims of Majorana detection, based on either tunneling or Coulomb blockade (CB) spectroscopy, remain disputed. Here we devise an experimental protocol that allows to perform both types of measurements on the same hybrid island by adjusting its charging energy via tunable junctions to the normal leads. This method reduces ambiguities of Majorana detections by checking the consistency between CB spectroscopy and zero bias peaks (ZBPs) in non-blockaded transport.Specifically, we observe junction-dependent, even-odd modulated, single-electron CB peaks in InAs/Al hybrid nanowires (NWs) without concomitant low-bias peaks in tunneling spectroscopy. We provide a theoretical interpretation of the experimental observations in terms of low-energy, longitudinally-confined island states rather than overlapping Majorana modes. Our results highlight the importance of combined measurements on the same device for the identification of topological MZMs.
△ Less
Submitted 11 October, 2022; v1 submitted 15 March, 2022;
originally announced March 2022.
-
Dynamics of hole singlet triplet qubits with large g-factor differences
Authors:
Daniel Jirovec,
Philipp M. Mutter,
Andrea Hofmann,
Josip Kukucka,
Alessandro Crippa,
Frederico Martins,
Andrea Ballabio,
Daniel Chrastina,
Giovanni Isella,
Guido Burkard,
Georgios Katsaros
Abstract:
The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener…
▽ More
The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener sweeps disentangle the Zeeman mixing effect from the spin-orbit induced coupling and show that large singlet-triplet avoided crossings do not imply a strong spin-orbit interaction. Our work emphasizes the need for a complete knowledge of the energy landscape when working with hole spin qubits.
△ Less
Submitted 9 November, 2021;
originally announced November 2021.
-
Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
Authors:
B. Severin,
D. T. Lennon,
L. C. Camenzind,
F. Vigneau,
F. Fedele,
D. Jirovec,
A. Ballabio,
D. Chrastina,
G. Isella,
M. de Kruijf,
M. J. Carballido,
S. Svab,
A. V. Kuhlmann,
F. R. Braakman,
S. Geyer,
F. N. M. Froning,
H. Moon,
M. A. Osborne,
D. Sejdinovic,
G. Katsaros,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares
Abstract:
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra…
▽ More
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.
△ Less
Submitted 27 July, 2021;
originally announced July 2021.
-
Enhancement of Proximity Induced Superconductivity in a Planar Ge Hole Gas
Authors:
Kushagra Aggarwal,
Andrea Hofmann,
Daniel Jirovec,
Ivan Prieto,
Amir Sammak,
Marc Botifoll,
Sara Marti-Sanchez,
Menno Veldhorst,
Jordi Arbiol,
Giordano Scappucci,
Jeroen Danon,
Georgios Katsaros
Abstract:
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust ag…
▽ More
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large \IcRn \ products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 Tesla paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.
△ Less
Submitted 19 February, 2021; v1 submitted 1 December, 2020;
originally announced December 2020.
-
A singlet triplet hole spin qubit in planar Ge
Authors:
Daniel Jirovec,
Andrea Hofmann,
Andrea Ballabio,
Philipp M. Mutter,
Giulio Tavani,
Marc Botifoll,
Alessandro Crippa,
Josip Kukucka,
Oliver Sagi,
Frederico Martins,
Jaime Saez-Mollejo,
Ivan Prieto,
Maksim Borovkov,
Jordi Arbiol,
Daniel Chrastina,
Giovanni Isella,
Georgios Katsaros
Abstract:
Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the c…
▽ More
Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor-difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $μ$s which we extend beyond 150 $μ$s with echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are on par with Ge single spin qubits, but they can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies.
△ Less
Submitted 7 April, 2021; v1 submitted 27 November, 2020;
originally announced November 2020.
-
Nontopological zero-bias peaks in full-shell nanowires induced by flux tunable Andreev states
Authors:
Marco Valentini,
Fernando Peñaranda,
Andrea Hofmann,
Matthias Brauns,
Robert Hauschild,
Peter Krogstrup,
Pablo San-Jose,
Elsa Prada,
Ramón Aguado,
Georgios Katsaros
Abstract:
A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements, and not the full-shell nanowire itself. Short tunneling regions never show s…
▽ More
A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements, and not the full-shell nanowire itself. Short tunneling regions never show subgap states, whereas longer junctions always do. This can be understood in terms of quantum dots forming in the junction and hosting Andreev levels in the Yu-Shiba-Rusinov regime. The intricate magnetic field dependence of the Andreev levels, through both the Zeeman and Little-Parks effects, may result in robust zero-bias peaks, features that could be easily misinterpreted as originating from Majorana zero modes, but are unrelated to topological superconductivity.
△ Less
Submitted 10 August, 2021; v1 submitted 5 August, 2020;
originally announced August 2020.
-
The germanium quantum information route
Authors:
Giordano Scappucci,
Christoph Kloeffel,
Floris A. Zwanenburg,
Daniel Loss,
Maksym Myronov,
Jian-Jun Zhang,
Silvano De Franceschi,
Georgios Katsaros,
Menno Veldhorst
Abstract:
In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairi…
▽ More
In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairing correlations. In this Review, we initially introduce the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective. We then examine the material science progress underpinning germanium-based planar heterostructures and nanowires. We review the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor devices for hybrid quantum systems. We conclude by identifying the most promising prospects toward scalable quantum information processing.
△ Less
Submitted 17 April, 2020;
originally announced April 2020.
-
Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
Authors:
Fei Gao,
Jian-Huan Wang,
Hannes Watzinger,
Hao Hu,
Marko J. Rančić,
Jie-Yin Zhang,
Ting Wang,
Yuan Yao,
Gui-Lei Wang,
Josip Kukučka,
Lada Vukušić,
Christoph Kloeffel,
Daniel Loss,
Feng Liu,
Georgios Katsaros,
Jian-Jun Zhang
Abstract:
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and…
▽ More
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.
△ Less
Submitted 3 February, 2020; v1 submitted 30 January, 2020;
originally announced January 2020.
-
Zero field splitting of heavy-hole states in quantum dots
Authors:
G. Katsaros,
J. Kukučka,
L. Vukušić,
H. Watzinger,
F. Gao,
T. Wang,
J. J. Zhang,
K. Held
Abstract:
Using inelastic cotunneling spectroscopy, we observe a 55μeV zero field splitting in the spin triplet manifold of Ge hut wire quantum dots. The degeneracy of the heavy hole triplet state is lifted since the interplay of strong spin orbit coupling and strong confinement leads to a preferred direction of the heavy-hole pseudospin. The reported effect should be observable in a broad class of strongly…
▽ More
Using inelastic cotunneling spectroscopy, we observe a 55μeV zero field splitting in the spin triplet manifold of Ge hut wire quantum dots. The degeneracy of the heavy hole triplet state is lifted since the interplay of strong spin orbit coupling and strong confinement leads to a preferred direction of the heavy-hole pseudospin. The reported effect should be observable in a broad class of strongly confined hole quantum-dot systems and needs to be considered when operating hole spin qubits.
△ Less
Submitted 3 March, 2020; v1 submitted 14 November, 2019;
originally announced November 2019.
-
Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits
Authors:
Andrea Hofmann,
Daniel Jirovec,
Maxim Borovkov,
Ivan Prieto,
Andrea Ballabio,
Jacopo Frigerio,
Daniel Chrastina,
Giovanni Isella,
Georgios Katsaros
Abstract:
We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In…
▽ More
We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit.
△ Less
Submitted 13 October, 2019;
originally announced October 2019.
-
Single-shot readout of hole spins in Ge
Authors:
Lada Vukušić,
Josip Kukučka,
Hannes Watzinger,
Joshua M. Milem,
Friedrich Schäffler,
Georgios Katsaros
Abstract:
The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 $μ$s at 500…
▽ More
The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 $μ$s at 500\,mT are reported. By analysing separately the spin-to-charge conversion and charge readout fidelities insight into the processes limiting the visibilities of hole spins has been obtained. The analyses suggest that very high hole visibilities are feasible at realistic experimental conditions underlying the potential of hole spins for the realization of viable qubit devices.
△ Less
Submitted 24 July, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
-
Ge hole spin qubit
Authors:
Hannes Watzinger,
Josip Kukučka,
Lada Vukušić,
Fei Gao,
Ting Wang,
Friedrich Schäffler,
Jian-Jun Zhang,
Georgios Katsaros
Abstract:
Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate double quantum dot devices in Ge hut wires. Low temperature transport measurements reveal Pauli spin blockade. We demonstrate electric-dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum…
▽ More
Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate double quantum dot devices in Ge hut wires. Low temperature transport measurements reveal Pauli spin blockade. We demonstrate electric-dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Next, we induce coherent hole spin oscillations by varying the duration of the microwave burst. Rabi oscillations with frequencies reaching 140MHz are observed. Finally, Ramsey experiments reveal dephasing times of 130ns. The reported results emphasize the potential of Ge as a platform for fast and scalable hole spin qubit devices.
△ Less
Submitted 11 April, 2018; v1 submitted 1 February, 2018;
originally announced February 2018.
-
Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry
Authors:
Lada Vukušić,
Josip Kukučka,
Hannes Watzinger,
Georgios Katsaros
Abstract:
Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in Germanium hut wires. By tuning the growth density of the latter we can realize a T-like structure between two neighboring wires. Such a structure allows the realization of a charge sensor, which is electrosta…
▽ More
Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in Germanium hut wires. By tuning the growth density of the latter we can realize a T-like structure between two neighboring wires. Such a structure allows the realization of a charge sensor, which is electrostatically and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3e. By integrating the T-like structure into a radio-frequency reflectometry setup, single-shot measurements allowing the extraction of hole tunneling times are performed. The extracted tunneling times of less than 10$μ$s are attributed to the small effective mass of Ge heavy-hole states and pave the way towards projective spin readout measurements.
△ Less
Submitted 21 August, 2017;
originally announced August 2017.
-
Heavy hole states in Germanium hut wires
Authors:
Hannes Watzinger,
Christoph Kloeffel,
Lada Vukušić,
Marta D. Rossell,
Violetta Sessi,
Josip Kukučka,
Raimund Kirchschlager,
Elisabeth Lausecker,
Alisha Truhlar,
Martin Glaser,
Armando Rastelli,
Andreas Fuhrer,
Daniel Loss,
Georgios Katsaros
Abstract:
Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large a…
▽ More
Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function which is of heavy hole character. A light hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors. However, this tiny light hole contribution does not influence the spin lifetimes, which are expected to be very long, even in non isotopically purified samples.
△ Less
Submitted 11 July, 2016;
originally announced July 2016.
-
PtSi Clustering In Silicon Probed by Transport Spectroscopy
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Riccardo Rurali,
Xavier Cartoixa,
Pascal Gentile,
Silvano de Franceschi
Abstract:
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phen…
▽ More
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.
△ Less
Submitted 21 July, 2014;
originally announced July 2014.
-
SiGe quantum dots for fast hole spin Rabi oscillations
Authors:
N. Ares,
G. Katsaros,
V. N. Golovach,
J. J. Zhang,
A. Prager,
L. I. Glazman,
O. G. Schmidt,
S. De Franceschi
Abstract:
We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions…
▽ More
We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.
△ Less
Submitted 26 July, 2013;
originally announced July 2013.
-
Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Pascal Gentile,
Silvano De Franceschi
Abstract:
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surroun…
▽ More
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid-helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.
△ Less
Submitted 7 August, 2012;
originally announced August 2012.
-
Monolithic growth of ultra-thin Ge nanowires on Si(001)
Authors:
Jianjun Zhang,
Georgios Katsaros,
Francesco Montalenti,
Daniele Scopece,
Roman O. Rezaev,
Christine Mickel,
Bernd Rellinghaus,
Leo Miglio,
Silvano De Franceschi,
Armando Rastelli,
Oliver G. Schmidt
Abstract:
Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existenc…
▽ More
Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, first transistor-type devices made from single wires show low-resistive electrical contacts and single hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics.
△ Less
Submitted 3 August, 2012;
originally announced August 2012.
-
On the nature of tunable hole g-factors in quantum dots
Authors:
N. Ares,
V. N. Golovach,
G. Katsaros,
M. Stoffel,
F. Fournel,
L. I. Glazman,
O. G. Schmidt,
S. De Franceschi
Abstract:
Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers dege…
▽ More
Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers degeneracy in the nanocrystal by altering the mixing between the heavy and the light holes. We show that the relative displacement between the heavy- and light-hole wave functions, occurring upon application of the electric field, has an effect on the mixing strength and leads to a strong non-monotonic modulation of the g-factor. Despite intensive studies of the g-factor since the late 50's, this mechanism of g-factor control has been largely overlooked in the literature.
△ Less
Submitted 2 August, 2012;
originally announced August 2012.
-
Zero-bias anomaly in a nanowire quantum dot coupled to superconductors
Authors:
Eduardo J. H. Lee,
Xiaocheng Jiang,
Ramon Aguado,
Giorgos Katsaros,
Charles M. Lieber,
Silvano De Franceschi
Abstract:
We studied the low-energy states of spin-1/2 quantum dots defined in InAs/InP nanowires and coupled to aluminium superconducting leads. By varying the superconducting gap, Δ, with a magnetic field, B, we investigated the transition from strong coupling, Δ<< T_{K}, to weak coupling, Δ>> T_{K}, where T_{K} is the Kondo temperature. Below the critical field, we observe a persisting zero-bias Kondo re…
▽ More
We studied the low-energy states of spin-1/2 quantum dots defined in InAs/InP nanowires and coupled to aluminium superconducting leads. By varying the superconducting gap, Δ, with a magnetic field, B, we investigated the transition from strong coupling, Δ<< T_{K}, to weak coupling, Δ>> T_{K}, where T_{K} is the Kondo temperature. Below the critical field, we observe a persisting zero-bias Kondo resonance that vanishes only for low B or higher temperatures, leaving the room to more robust sub-gap structures at bias voltages between Δand 2Δ. For strong and approximately symmetric tunnel couplings, a Josephson supercurrent is observed in addition to the Kondo peak. We ascribe the coexistence of a Kondo resonance and a superconducting gap to a significant density of intra-gap quasiparticle states, and the finite-bias sub-gap structures to tunneling through Shiba states. Our results, supported by numerical calculations, own relevance also in relation to tunnel-spectroscopy experiments aiming at the observation of Majorana fermions in hybrid nanostructures.
△ Less
Submitted 16 October, 2012; v1 submitted 5 July, 2012;
originally announced July 2012.
-
Joule-assisted silicidation for short-channel silicon nanowire devices
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Pascal Gentile,
Marc Sanquer,
Silvano De Franceschi
Abstract:
We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-si…
▽ More
We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm.
△ Less
Submitted 25 October, 2011;
originally announced October 2011.
-
Observation of spin-selective tunneling in SiGe nanocrystals
Authors:
G. Katsaros,
V. N. Golovach,
P. Spathis,
N. Ares,
M. Stoffel,
F. Fournel,
O. G. Schmidt,
L. I. Glazman,
S. De Franceschi
Abstract:
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be…
▽ More
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.
△ Less
Submitted 20 July, 2011;
originally announced July 2011.
-
Quantum transport in GaN/AlN double-barrier heterostructure nanowires
Authors:
R. Songmuang,
G. Katsaros,
E. Monroy,
P. Spathis,
C. Bourgeral,
M. Mongillo,
S. De Franceschi
Abstract:
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped mi…
▽ More
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ~100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN well in between. In the case of 6-nm-thick wells and 2-nm-thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For narrower wells and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ~150 K.
△ Less
Submitted 20 May, 2010;
originally announced May 2010.
-
Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
Authors:
G. Katsaros,
P. Spathis,
M. Stoffel,
F. Fournel,
M. Mongillo,
V. Bouchiat,
F. Lefloch,
A. Rastelli,
O. G. Schmidt,
S. De Franceschi
Abstract:
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made b…
▽ More
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.
△ Less
Submitted 11 May, 2010;
originally announced May 2010.
