Showing 1–50 of 81 results for author: Scappucci, G

High-fidelity single-spin shuttling in silicon

Authors: Maxim De Smet, Yuta Matsumoto, Anne-Marije J. Zwerver, Larysa Tryputen, Sander L. de Snoo, Sergey V. Amitonov, Amir Sammak, Nodar Samkharadze, Önder Gül, Rick N. M. Wasserman, Maximilian Rimbach-Russ, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms… ▽ More The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. First, we form static quantum dots, and study how spin coherence decays as we repeatedly move a single electron between up to five dots. Next, we create a traveling wave potential to transport an electron in a moving quantum dot. This second method shows substantially better spin coherence than the first. It allows us to displace an electron over an effective distance of 10 μm in under 200 ns with an average fidelity of 99%. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Comments: 15 pages, 15 figures

A proximitized quantum dot in germanium

Authors: Lazar Lakic, William I. L. Lawrie, David van Driel, Lucas E. A. Stehouwer, Menno Veldhorst, Giordano Scappucci, Ferdinand Kuemmeth, Anasua Chatterjee

Abstract: Planar germanium quantum wells have recently been shown to host a hard-gapped superconductor-semiconductor interface. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host super… ▽ More Planar germanium quantum wells have recently been shown to host a hard-gapped superconductor-semiconductor interface. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host superconductor-semiconductor hybrid devices, proximitized quantum dots in germanium are a crucial ingredient towards topological superconductivity and novel qubit modalities. Here we demonstrate a quantum dot (QD) in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtGeSi) superconducting lead (SC), forming a SC-QD-SC junction. We show tunability of the QD-SC coupling strength, as well as gate control of the ratio of charging energy and the induced gap. We further exploit this tunability by exhibiting control of the ground state of the system between even and odd parity. Furthermore, we characterize the critical magnetic field strengths, finding a robust critical out-of-plane field of 0.91(5) T. Finally we explore sub-gap spin splitting in the device, observing rich physics in the resulting spectra, that we model using a zero-bandwidth model in the Yu-Shiba-Rusinov limit. The demonstration of controllable proximitization at the nanoscale of a germanium quantum dot opens up the physics of novel spin and superconducting qubits, and Josephson junction arrays in a group IV material. △ Less

Submitted 9 May, 2024; v1 submitted 3 May, 2024; originally announced May 2024.

Comments: Main text : 9 pages, 4 figures Supplement : 8 pages, 5 figures

Report number: NBI QDev 2024

Passive and active suppression of transduced noise in silicon spin qubits

Authors: Jaemin Park, Hyeongyu Jang, Hanseo Sohn, Jonginn Yun, Younguk Song, Byungwoo Kang, Lucas E. A. Stehouwer, Davide Degli Esposti, Giordano Scappucci, Dohun Kim

Abstract: Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear spin-free materials, such as isotopically purified silicon, exhibit intrinsically promising coherence properties for electron spin qubits, the omnipresent charge… ▽ More Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear spin-free materials, such as isotopically purified silicon, exhibit intrinsically promising coherence properties for electron spin qubits, the omnipresent charge noise, when converted to magnetic noise under a strong magnetic field gradient, often hinders stable qubit operation within a time frame comparable to the data acquisition time. Here, we demonstrate both open- and closed-loop suppression techniques for the transduced noise in silicon spin qubits, resulting in a more than two-fold (ten-fold) improvement of the inhomogeneous coherence time (Rabi oscillation quality) that leads to a single-qubit gate fidelity of over 99.6% even in the presence of a strong decoherence field gradient. Utilizing gate set tomography, we show that adaptive qubit control also reduces the non-Markovian noise in the system, which validates the stability of the gate fidelity. The technique can be used to learn multiple Hamiltonian parameters and is useful for the intermittent calibration of the circuit parameters with affordable experimental overhead, providing a useful subroutine during the repeated execution of general quantum circuits. △ Less

Submitted 5 March, 2024; originally announced March 2024.

Operating semiconductor quantum processors with hopping spins

Authors: Chien-An Wang, Valentin John, Hanifa Tidjani, Cécile X. Yu, Alexander Ivlev, Corentin Déprez, Floor van Riggelen-Doelman, Benjamin D. Woods, Nico W. Hendrickx, Will I. L. Lawrie, Lucas E. A. Stehouwer, Stefan Oosterhout, Amir Sammak, Mark Friesen, Giordano Scappucci, Sander L. de Snoo, Maximilian Rimbach-Russ, Francesco Borsoi, Menno Veldhorst

Abstract: Qubits that can be efficiently controlled are pivotal in the development of scalable quantum hardware. Resonant control is commonly embraced to execute high-fidelity quantum gates but demands integration of high-frequency oscillating signals and results in qubit crosstalk and heating. Establishing quantum control based on discrete signals could therefore result in a paradigm shift. This may be acc… ▽ More Qubits that can be efficiently controlled are pivotal in the development of scalable quantum hardware. Resonant control is commonly embraced to execute high-fidelity quantum gates but demands integration of high-frequency oscillating signals and results in qubit crosstalk and heating. Establishing quantum control based on discrete signals could therefore result in a paradigm shift. This may be accomplished with single-spin semiconductor qubits, if one can engineer hopping spins between quantum dots with site-dependent spin quantization axis. Here, we introduce hopping-based universal quantum logic and obtain single-qubit gate fidelities of 99.97%, coherent shuttling fidelities of 99.992%, and two-qubit gates fidelities of 99.3%, corresponding to error rates that have been predicted to allow for quantum error correction. We demonstrate that hopping spins also constitute an elegant tuning method by statistically mapping the coherence of a 10-quantum dot system. These results motivate dense quantum dot arrays with sparse occupation for efficient and high-connectivity qubit registers. △ Less

Submitted 28 February, 2024; originally announced February 2024.

Comments: main text with 18 pages and 3 figures, supplementary materials with 65 pages and 26 figures, in a single file

Coupled vertical double quantum dots at single-hole occupancy

Authors: Alexander Ivlev, Hanifa Tidjani, Stefan Oosterhout, Amir Sammak, Giordano Scappucci, Menno Veldhorst

Abstract: Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum well, silicon-germanium heterostructure. We sense individual charge transitions with a single-hole transistor. The vertical separation between the quantum wells… ▽ More Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum well, silicon-germanium heterostructure. We sense individual charge transitions with a single-hole transistor. The vertical separation between the quantum wells provides a sufficient difference in capacitive coupling to distinguish quantum dots located in the top and bottom quantum well. Tuning the vertical double quantum dot to the (1,1) charge state confines a single hole in each quantum well beneath a single plunger gate. By simultaneously accumulating holes under two neighbouring plunger gates, we are able to tune to the (1,1,1,1) charge state. These results motivate quantum dot systems that exploit the third dimension, opening new opportunities for quantum simulation and quantum computing. △ Less

Submitted 10 July, 2024; v1 submitted 15 January, 2024; originally announced January 2024.

Comments: 12 pages, 9 figures

Journal ref: Applied Physics Letters (Vol.125, Issue 2, 2024)

Universal control of four singlet-triplet qubits

Authors: Xin Zhang, Elizaveta Morozova, Maximilian Rimbach-Russ, Daniel Jirovec, Tzu-Kan Hsiao, Pablo Cova Fariña, Chien-An Wang, Stefan D. Oosterhout, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubi… ▽ More The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubits in this system and show two-axis single-qubit control of each qubit and SWAP-style two-qubit gates between all neighbouring qubit pairs, yielding average single-qubit gate fidelities of 99.49(8)-99.84(1)% and Bell state fidelities of 73(1)-90(1)%. Combining these operations, we experimentally implement a circuit designed to generate and distribute entanglement across the array. A remote Bell state with a fidelity of 75(2)% and concurrence of 22(4)% is achieved. These results highlight the potential of singlet-triplet qubits as a competing platform for quantum computing and indicate that scaling up the control of quantum dot spins in extended bilinear arrays can be feasible. △ Less

Submitted 23 July, 2024; v1 submitted 26 December, 2023; originally announced December 2023.

Comments: In the updated version, data on single- and two-qubit gate fidelities, as well as two-qubit Bell state fidelities, have been added

Gate modulation of the hole singlet-triplet qubit frequency in germanium

Authors: John Rooney, Zhentao Luo, Lucas E. A. Stehouwer, Giordano Scappucci, Menno Veldhorst, Hong-Wen Jiang

Abstract: Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these $g$-tensors necessitates the need to understand th… ▽ More Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these $g$-tensors necessitates the need to understand their sensitivity to the confinement potential that defines the quantum dots. Here, we demonstrate a $S-T\_$ qubit whose frequency is a strong function of the voltage applied to the barrier gate shared by the quantum dots. We find a $g$-factor that can be approximately increased by an order of magnitude adjusting the barrier gate voltage only by 12 mV. We attribute the strong dependence to a variable strain profile in our device. This work not only reinforces previous findings that site-dependent $g$-tensors in germanium can be utilized for qubit manipulation, but reveals the sensitivity and tunability these $g$-tensors have to the electrostatic confinement of the quantum dot. △ Less

Submitted 16 November, 2023; originally announced November 2023.

Two-qubit logic between distant spins in silicon

Authors: Jurgen Dijkema, Xiao Xue, Patrick Harvey-Collard, Maximilian Rimbach-Russ, Sander L. de Snoo, Guoji Zheng, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Direct interactions between quantum particles naturally fall off with distance. For future-proof qubit architectures, however, it is important to avail of interaction mechanisms on different length scales. In this work, we utilize a superconducting resonator to facilitate a coherent interaction between two semiconductor spin qubits 250 $μ$m apart. This separation is several orders of magnitude lar… ▽ More Direct interactions between quantum particles naturally fall off with distance. For future-proof qubit architectures, however, it is important to avail of interaction mechanisms on different length scales. In this work, we utilize a superconducting resonator to facilitate a coherent interaction between two semiconductor spin qubits 250 $μ$m apart. This separation is several orders of magnitude larger than for the commonly employed direct interaction mechanisms in this platform. We operate the system in a regime where the resonator mediates a spin-spin coupling through virtual photons. We report anti-phase oscillations of the populations of the two spins with controllable frequency. The observations are consistent with iSWAP oscillations and ten nanosecond entangling operations. These results hold promise for scalable networks of spin qubit modules on a chip. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Comments: 17 pages, 9 figures

Single-electron occupation in quantum dot arrays at selectable plunger gate voltage

Authors: Marcel Meyer, Corentin Déprez, Ilja N. Meijer, Florian K. Unseld, Saurabh Karwal, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen, Menno Veldhorst

Abstract: The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the… ▽ More The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2$\times$2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware. △ Less

Submitted 7 September, 2023; originally announced September 2023.

Low disorder and high valley splitting in silicon

Authors: Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül, Nodar Samkharadze, Corentin Déprez, Marcel Meyer, Ilja N. Meijer, Larysa Tryputen, Saurabh Karwal, Marc Botifoll, Jordi Arbiol, Sergey V. Amitonov, Lieven M. K. Vandersypen, Amir Sammak, Menno Veldhorst, Giordano Scappucci

Abstract: The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductio… ▽ More The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $μ$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors. △ Less

Submitted 2 February, 2024; v1 submitted 6 September, 2023; originally announced September 2023.

Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99 %

Authors: Kenta Takeda, Akito Noiri, Takashi Nakajima, Leon C. Camenzind, Takashi Kobayashi, Amir Sammak, Giordano Scappucci, Seigo Tarucha

Abstract: Silicon-based spin qubits offer a potential pathway toward realizing a scalable quantum computer owing to their compatibility with semiconductor manufacturing technologies. Recent experiments in this system have demonstrated crucial technologies, including high-fidelity quantum gates and multiqubit operation. However, the realization of a fault-tolerant quantum computer requires a high-fidelity sp… ▽ More Silicon-based spin qubits offer a potential pathway toward realizing a scalable quantum computer owing to their compatibility with semiconductor manufacturing technologies. Recent experiments in this system have demonstrated crucial technologies, including high-fidelity quantum gates and multiqubit operation. However, the realization of a fault-tolerant quantum computer requires a high-fidelity spin measurement faster than decoherence. To address this challenge, we characterize and optimize the initialization and measurement procedures using the parity-mode Pauli spin blockade technique. Here, we demonstrate a rapid (with a duration of a few us) and accurate (with >99% fidelity) parity spin measurement in a silicon double quantum dot. These results represent a significant step forward toward implementing measurement-based quantum error correction in silicon. △ Less

Submitted 31 August, 2023; originally announced September 2023.

Journal ref: npj Quantum Inf 10, 22 (2024)

Coherent spin qubit shuttling through germanium quantum dots

Authors: Floor van Riggelen-Doelman, Chien-An Wang, Sander L. de Snoo, William I. L. Lawrie, Nico W. Hendrickx, Maximilian Rimbach-Russ, Amir Sammak, Giordano Scappucci, Corentin Déprez, Menno Veldhorst

Abstract: Quantum links can interconnect qubit registers and are therefore essential in networked quantum computing. Semiconductor quantum dot qubits have seen significant progress in the high-fidelity operation of small qubit registers but establishing a compelling quantum link remains a challenge. Here, we show that a spin qubit can be shuttled through multiple quantum dots while preserving its quantum in… ▽ More Quantum links can interconnect qubit registers and are therefore essential in networked quantum computing. Semiconductor quantum dot qubits have seen significant progress in the high-fidelity operation of small qubit registers but establishing a compelling quantum link remains a challenge. Here, we show that a spin qubit can be shuttled through multiple quantum dots while preserving its quantum information. Remarkably, we achieve these results using hole spin qubits in germanium, despite the presence of strong spin-orbit interaction. We accomplish the shuttling of spin basis states over effective lengths beyond 300 $μ$m and demonstrate the coherent shuttling of superposition states over effective lengths corresponding to 9 $μ$m, which we can extend to 49 $μ$m by incorporating dynamical decoupling. These findings indicate qubit shuttling as an effective approach to route qubits within registers and to establish quantum links between registers. △ Less

Submitted 4 August, 2023; originally announced August 2023.

Comments: Main text: 9 pages, 4 figures Supplementary material: 10 pages, 8 figures

Journal ref: Nat. Commun. 15, 5716 (2024)

Bichromatic Rabi control of semiconductor qubits

Authors: Valentin John, Francesco Borsoi, Zoltán György, Chien-An Wang, Gábor Széchenyi, Floor van Riggelen, William I. L. Lawrie, Nico W. Hendrickx, Amir Sammak, Giordano Scappucci, András Pályi, Menno Veldhorst

Abstract: Electrically-driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially-selective approach for large qubit arrays. By applying simultaneous microwave bursts to different… ▽ More Electrically-driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially-selective approach for large qubit arrays. By applying simultaneous microwave bursts to different gate electrodes, we observe multichromatic resonance lines and resonance anticrossings that are caused by the ac Stark shift. Our theoretical framework aligns with experimental data, highlighting interdot motion as the dominant mechanism for bichromatic driving. △ Less

Submitted 3 August, 2023; originally announced August 2023.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 132, 067001 (2024)

Hamiltonian Phase Error in Resonantly Driven CNOT Gate Above the Fault-Tolerant Threshold

Authors: Yi-Hsien Wu, Leon C. Camenzind, Akito Noiri, Kenta Takeda, Takashi Nakajima, Takashi Kobayashi, Chien-Yuan Chang, Amir Sammak, Giordano Scappucci, Hsi-Sheng Goan, Seigo Tarucha

Abstract: Because of their long coherence time and compatibility with industrial foundry processes, electron spin qubits are a promising platform for scalable quantum processors. A full-fledged quantum computer will need quantum error correction, which requires high-fidelity quantum gates. Analyzing and mitigating the gate errors are useful to improve the gate fidelity. Here, we demonstrate a simple yet rel… ▽ More Because of their long coherence time and compatibility with industrial foundry processes, electron spin qubits are a promising platform for scalable quantum processors. A full-fledged quantum computer will need quantum error correction, which requires high-fidelity quantum gates. Analyzing and mitigating the gate errors are useful to improve the gate fidelity. Here, we demonstrate a simple yet reliable calibration procedure for a high-fidelity controlled-rotation gate in an exchange-always-on Silicon quantum processor allowing operation above the fault-tolerance threshold of quantum error correction. We find that the fidelity of our uncalibrated controlled-rotation gate is limited by coherent errors in the form of controlled-phases and present a method to measure and correct these phase errors. We then verify the improvement in our gate fidelities by randomized benchmark and gate-set tomography protocols. Finally, we use our phase correction protocol to implement a virtual, high-fidelity controlled-phase gate. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Comments: Main article: 22 pages, 4 figures; Supplementary material: 6 pages, 5 figures, 1 table

Exciton transport in a germanium quantum dot ladder

Authors: T. -K. Hsiao, P. Cova Fariña, S. D. Oosterhout, D. Jirovec, X. Zhang, C. J. van Diepen, W. I. L. Lawrie, C. -A. Wang, A. Sammak, G. Scappucci, M. Veldhorst, E. Demler, L. M. K. Vandersypen

Abstract: Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a g… ▽ More Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a germanium 4$\times$2 quantum dot array and show that the naturally occurring long-range Coulomb interaction can lead to exciton formation and transport. We tune the quantum dot ladder into two capacitively-coupled channels and exploit Coulomb drag to probe the binding of electrons and holes. Specifically, we shuttle an electron through one leg of the ladder and observe that a hole is dragged along in the second leg under the right conditions. This corresponds to a transition from single-electron transport in one leg to exciton transport along the ladder. Our work paves the way for the study of excitonic states of matter in quantum dot arrays. △ Less

Submitted 5 July, 2023; originally announced July 2023.

Comments: 15 pages and 13 figures

Journal ref: Phys. Rev. X 14, 011048 (2024)

Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field

Authors: Abhikbrata Sarkar, Zhanning Wang, Mathew Rendell, Nico W. Hendrickx, Menno Veldhorst, Giordano Scappucci, Mohammad Khalifa, Joe Salfi, Andre Saraiva, A. S. Dzurak, A. R. Hamilton, Dimitrie Culcer

Abstract: In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxa… ▽ More In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxation, and the existence of coherence sweet spots. We find that the choice of magnetic field orientation makes a substantial difference for the properties of hole spin qubits. Furthermore, although the Schrieffer-Wolff approximation can describe electron dipole spin resonance (EDSR), it does not capture the fundamental spin dynamics underlying qubit coherence. Specifically, we find that: (i) EDSR for in-plane magnetic fields varies non-linearly with the field strength and weaker than for perpendicular magnetic fields; (ii) The EDSR Rabi frequency is maximized when the a.c. electric field is aligned parallel to the magnetic field, and vanishes when the two are perpendicular; (iii) The Rabi ratio $T_1/T_π$, i.e. the number of EDSR gate operation per unit relaxation time, is expected to be as large as $5{\times}10^5$ at the magnetic fields used experimentally; (iv) The orbital magnetic field terms make the in-plane $g$-factor strongly anisotropic in a squeezed dot, in excellent agreement with experimental measurements; (v) The coherence sweet spots do not exist in an in-plane magnetic field, as the orbital magnetic field terms expose the qubit to all components of the defect electric field. These findings will provide a guideline for experiments to design ultrafast, highly coherent hole spin qubits in Ge. △ Less

Submitted 3 July, 2023; originally announced July 2023.

Journal ref: Physical Review B 108, 245301 (2023)

A 2D quantum dot array in planar $^{28}$Si/SiGe

Authors: Florian K. Unseld, Marcel Meyer, Mateusz T. Mądzik, Francesco Borsoi, Sander L. de Snoo, Sergey V. Amitonov, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking… ▽ More Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking advantage of high-quality heterostructures and carefully designed gate patterns, we are able to form a tunnel coupled 2 $\times$ 2 quantum dot array in a $^{28}$Si/SiGe heterostructure. We are able to load a single electron in all four quantum dots, thus reaching the (1,1,1,1) charge state. Furthermore we characterise and control the tunnel coupling between all pairs of dots by measuring polarisation lines over a wide range of barrier gate voltages. Tunnel couplings can be tuned from about $30~\rm μeV$ up to approximately $400~\rm μeV$. These experiments provide a first step toward the operation of spin qubits in $^{28}$Si/SiGe quantum dots in two dimensions. △ Less

Submitted 6 June, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: 8 pages, 6 figures

A vertical gate-defined double quantum dot in a strained germanium double quantum well

Authors: Hanifa Tidjani, Alberto Tosato, Alexander Ivlev, Corentin Déprez, Stefan Oosterhout, Lucas Stehouwer, Amir Sammak, Giordano Scappucci, Menno Veldhorst

Abstract: Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quant… ▽ More Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quantum dot in a strained germanium double quantum well. In quantum transport measurements we observe stability diagrams corresponding to a double quantum dot system. We analyze the capacitive coupling to the nearby gates and find two quantum dots accumulated under the central plunger gate. We extract the position and estimated size, from which we conclude that the double quantum dots are vertically stacked in the two quantum wells. We discuss challenges and opportunities and outline potential applications in quantum computing and quantum simulation. △ Less

Submitted 24 May, 2023; v1 submitted 23 May, 2023; originally announced May 2023.

Comments: 12 pages including supplementary material

Germanium wafers for strained quantum wells with low disorder

Authors: Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Davide Costa, Menno Veldhorst, Amir Sammak, Giordano Scappucci

Abstract: We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated… ▽ More We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated reduction in short-range scattering allows for a drastic improvement of the disorder properties of the two-dimensional hole gas, measured in several Ge/SiGe heterostructure field-effect transistors. We measure an average low percolation density of (1.22$\pm$0.03)$\times$10$^{10}$ cm$^{-2}$, and an average maximum mobility of (3.4$\pm$0.1)$\times$10$^{6}$ cm$^2$/Vs and quantum mobility of (8.4$\pm$0.5)$\times$10$^{4}$ cm$^2$/Vs when the hole density in the quantum well is saturated to (1.65$\pm$0.02)$\times$10$^{11}$ cm$^{-2}$. We anticipate immediate application of these heterostructures for next-generation, higher-performance Ge spin-qubits and their integration into larger quantum processors. △ Less

Submitted 22 August, 2023; v1 submitted 15 May, 2023; originally announced May 2023.

Journal ref: Appl. Phys. Lett. 123, 092101 (2023)

Hotter is easier: unexpected temperature dependence of spin qubit frequencies

Authors: Brennan Undseth, Oriol Pietx-Casas, Eline Raymenants, Mohammad Mehmandoost, Mateusz T. Mądzik, Stephan G. J. Philips, Sander L. de Snoo, David J. Michalak, Sergey V. Amitonov, Larysa Tryputen, Brian Paquelet Wuetz, Viviana Fezzi, Davide Degli Esposti, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum algorithms and error-correction protocols. In particular, recent experiments have highlighted pernicious transient qubit frequency shifts associated with microwave qubit driving. Workarounds for small devices, including pr… ▽ More As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum algorithms and error-correction protocols. In particular, recent experiments have highlighted pernicious transient qubit frequency shifts associated with microwave qubit driving. Workarounds for small devices, including prepulsing with an off-resonant microwave burst to bring a device to a steady-state, wait times prior to measurement, and qubit-specific calibrations all bode ill for device scalability. Here, we make substantial progress in understanding and overcoming this effect. We report a surprising non-monotonic relation between mixing chamber temperature and spin Larmor frequency which is consistent with observed frequency shifts induced by microwave and baseband control signals. We find that purposefully operating the device at 200 mK greatly suppresses the adverse heating effect while not compromising qubit coherence or single-qubit fidelity benchmarks. Furthermore, systematic non-Markovian crosstalk is greatly reduced. Our results provide a straightforward means of improving the quality of multi-spin control while simplifying calibration procedures for future spin-based quantum processors. △ Less

Submitted 28 April, 2023; v1 submitted 25 April, 2023; originally announced April 2023.

Comments: 17 pages, 11 figures

Journal ref: Phys. Rev. X 13, 041015 (2023)

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Authors: Merritt P. Losert, M. A. Eriksson, Robert Joynt, Rajib Rahman, Giordano Scappucci, Susan N. Coppersmith, Mark Friesen

Abstract: Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we t… ▽ More Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we theoretically explore the interplay between quantum-well imperfections that suppress the valley splitting and cause variability, such as broadened interfaces and atomic steps at the interface, while self-consistently accounting for germanium concentration fluctuations. We consider both conventional and unconventional approaches for controlling the valley splitting, and present concrete strategies for implementing them. Our results provide a clear path for achieving qubit uniformity in a scalable silicon quantum computer. △ Less

Submitted 11 January, 2024; v1 submitted 4 March, 2023; originally announced March 2023.

Comments: 35 pages, 22 figures

Journal ref: Phys. Rev. B 108, 125405 (2023)

Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits

Authors: Juan S. Rojas-Arias, Akito Noiri, Peter Stano, Takashi Nakajima, Jun Yoneda, Kenta Takeda, Takashi Kobayashi, Amir Sammak, Giordano Scappucci, Daniel Loss, Seigo Tarucha

Abstract: We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in isotopically purified Si/SiGe quantum dots. At low frequencies (where the noise is strongest), the correlation coefficient reaches 10% for a next-nearest-neighbor qubit-pair separated by 200 nm. Assigning the observed noise to be of electrical origin, a simple theoretical model quantitatively reproduces the me… ▽ More We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in isotopically purified Si/SiGe quantum dots. At low frequencies (where the noise is strongest), the correlation coefficient reaches 10% for a next-nearest-neighbor qubit-pair separated by 200 nm. Assigning the observed noise to be of electrical origin, a simple theoretical model quantitatively reproduces the measurements and predicts a polynomial decay of correlations with interqubit distance. Our results quantify long-range correlations of noise dephasing quantum-dot spin qubits arranged in arrays, essential for scalability and fault-tolerance of such systems. △ Less

Submitted 22 February, 2023; originally announced February 2023.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. Applied 20, 054024 (2023)

Electrical control of uniformity in quantum dot devices

Authors: Marcel Meyer, Corentin Déprez, Timo R. van Abswoude, Dingshan Liu, Chien-An Wang, Saurabh Karwal, Stefan Oosterhout, Franscesco Borsoi, Amir Sammak, Nico W. Hendrickx, Giordano Scappucci, Menno Veldhorst

Abstract: Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the int… ▽ More Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots reducing the spread in pinch-off voltage by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays. △ Less

Submitted 24 November, 2022; originally announced November 2022.

Reducing charge noise in quantum dots by using thin silicon quantum wells

Authors: B. Paquelet Wuetz, D. Degli Esposti, A. M. J. Zwerver, S. V. Amitonov, M. Botifoll, J. Arbiol, A. Sammak, L. M. K. Vandersypen, M. Russ, G. Scappucci

Abstract: Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a $^{28}$Si/SiGe heterostructure a… ▽ More Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a $^{28}$Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick $^{28}$Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29$\pm$0.02 $μ$eV/sqrt(Hz) at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to cz-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system. △ Less

Submitted 15 September, 2022; originally announced September 2022.

Journal ref: Nature Communications, 14, 1385 (2023)

Shared control of a 16 semiconductor quantum dot crossbar array

Authors: Francesco Borsoi, Nico W. Hendrickx, Valentin John, Sayr Motz, Floor van Riggelen, Amir Sammak, Sander L. de Snoo, Giordano Scappucci, Menno Veldhorst

Abstract: The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires at least one unique control line, an approach that will become unsustainable when scaling to the required millions of qubits. Here, inspired by random access a… ▽ More The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires at least one unique control line, an approach that will become unsustainable when scaling to the required millions of qubits. Here, inspired by random access architectures in classical electronics, we introduce the shared control of semiconductor quantum dots to efficiently operate a two-dimensional crossbar array in planar germanium. We tune the entire array, comprising 16 quantum dots, to the few-hole regime and, to isolate an unpaired spin per dot, we confine an odd number of holes in each site. Moving forward, we establish a method for the selective control of the quantum dots interdot coupling and achieve a tunnel coupling tunability over more than 10 GHz. The operation of a quantum electronic device with fewer control terminals than tunable experimental parameters represents a compelling step forward in the construction of scalable quantum technology. △ Less

Submitted 14 September, 2022; originally announced September 2022.

Comments: 33 pages including supplementary information

Shuttling an electron spin through a silicon quantum dot array

Authors: A. M. J. Zwerver, S. V. Amitonov, S. L. de Snoo, M. T. Mądzik, M. Russ, A. Sammak, G. Scappucci, L. M. K. Vandersypen

Abstract: Coherent links between qubits separated by tens of micrometers are expected to facilitate scalable quantum computing architectures for spin qubits in electrically-defined quantum dots. These links create space for classical on-chip control electronics between qubit arrays, which can help to alleviate the so-called wiring bottleneck. A promising method of achieving coherent links between distant sp… ▽ More Coherent links between qubits separated by tens of micrometers are expected to facilitate scalable quantum computing architectures for spin qubits in electrically-defined quantum dots. These links create space for classical on-chip control electronics between qubit arrays, which can help to alleviate the so-called wiring bottleneck. A promising method of achieving coherent links between distant spin qubits consists of shuttling the spin through an array of quantum dots. Here, we use a linear array of four tunnel-coupled quantum dots in a 28Si/SiGe heterostructure to create a short quantum link. We move an electron spin through the quantum dot array by adjusting the electrochemical potential for each quantum dot sequentially. By pulsing the gates repeatedly, we shuttle an electron forward and backward through the array up to 250 times, which corresponds to a total distance of approximately 80 μm. We make an estimate of the spin-flip probability per hop in these experiments and conclude that this is well below 0.01% per hop. △ Less

Submitted 12 September, 2022; v1 submitted 2 September, 2022; originally announced September 2022.

Comments: 11 pages, 3 main figures, 6 appendix figures

Journal ref: PRX Quantum 4, 030303, (2023)

Probing resonating valence bonds on a programmable germanium quantum simulator

Authors: Chien-An Wang, Corentin Déprez, Hanifa Tidjani, William I. L. Lawrie, Nico W. Hendrickx, Amir Sammak, Giordano Scappucci, Menno Veldhorst

Abstract: Simulations using highly tunable quantum systems may enable investigations of condensed matter systems beyond the capabilities of classical computers. Quantum dots and donors in semiconductor technology define a natural approach to implement quantum simulation. Several material platforms have been used to study interacting charge states, while gallium arsenide has also been used to investigate spi… ▽ More Simulations using highly tunable quantum systems may enable investigations of condensed matter systems beyond the capabilities of classical computers. Quantum dots and donors in semiconductor technology define a natural approach to implement quantum simulation. Several material platforms have been used to study interacting charge states, while gallium arsenide has also been used to investigate spin evolution. However, decoherence remains a key challenge in simulating coherent quantum dynamics. Here, we introduce quantum simulation using hole spins in germanium quantum dots. We demonstrate extensive and coherent control enabling the tuning of multi-spin states in isolated, paired, and fully coupled quantum dots. We then focus on the simulation of resonating valence bonds and measure the evolution between singlet product states which remains coherent over many periods. Finally, we realize four-spin states with $s$-wave and $d$-wave symmetry. These results provide means to perform non-trivial and coherent simulations of correlated electron systems. △ Less

Submitted 24 August, 2022; originally announced August 2022.

Comments: Article main text and Supplementary Information Main text: 9 pages, 5 figures Supplementary Information: 15 pages, 9 figures

Journal ref: npj Quantum Information volume 9, Article number: 58 (2023)

Modelling of planar germanium hole qubits in electric and magnetic fields

Authors: Chien-An Wang, Ercan Ekmel, Mark Gyure, Giordano Scappucci, Menno Veldhorst, Maximilian Rimbach-Russ

Abstract: Hole-based spin qubits in strained planar germanium quantum wells have received considerable attention due to their favourable properties and remarkable experimental progress. The sizeable spin-orbit interaction in this structure allows for efficient qubit operations with electric fields. However, it also couples the qubit to electrical noise. In this work, we perform simulations of a heterostruct… ▽ More Hole-based spin qubits in strained planar germanium quantum wells have received considerable attention due to their favourable properties and remarkable experimental progress. The sizeable spin-orbit interaction in this structure allows for efficient qubit operations with electric fields. However, it also couples the qubit to electrical noise. In this work, we perform simulations of a heterostructure hosting these hole spin qubits. We solve the effective mass equations for a realistic heterostructure, provide a set of analytical basis wave functions, and compute the effective g-factor of the heavy-hole ground-state. Our investigations reveal a strong impact of highly excited light-hole states located outside the quantum well on the g-factor. We find that sweet spots, points of operations that are least susceptible to charge noise, for out-of-plane magnetic fields are shifted to impractically large electric fields. However, for magnetic fields close to in-plane alignment, partial sweet spots at low electric fields are recovered. Furthermore, sweet spots with respect to multiple fluctuating charge traps can be found under certain circumstances for different magnetic field alignments. This work will be helpful in understanding and improving coherence of germanium hole spin qubits. △ Less

Submitted 28 August, 2024; v1 submitted 9 August, 2022; originally announced August 2022.

Comments: 11 pages, 6 Figures

Hard superconducting gap in germanium

Authors: Alberto Tosato, Vukan Levajac, Ji-Yin Wang, Casper J. Boor, Francesco Borsoi, Marc Botifoll, Carla N. Borja, Sara Martí-Sánchez, Jordi Arbiol, Amir Sammak, Menno Veldhorst, Giordano Scappucci

Abstract: The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free o… ▽ More The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free of subgap states (hard gap) has proven difficult. Here we solve this challenge by developing a low-disorder, oxide-free interface between high-mobility planar germanium and a germanosilicide parent superconductor. This superconducting contact is formed by the thermally-activated solid phase reaction between a metal (Pt) and the semiconductor heterostructure (Ge/SiGe). Electrical characterization reveals near-unity transparency in Josephson junctions and, importantly, a hard induced superconducting gap in quantum point contacts. Furthermore, we demonstrate phase control of a Josephson junction and study transport in a gated two-dimensional superconductor-semiconductor array towards scalable architectures. These results expand the quantum technology toolbox in germanium and provide new avenues for exploring monolithic superconductor-semiconductor quantum circuits towards scalable quantum information processing. △ Less

Submitted 8 December, 2022; v1 submitted 1 June, 2022; originally announced June 2022.

Journal ref: Communications Materials, 4, 23 (2023)

Nonlinear response and crosstalk of electrically driven silicon spin qubits

Authors: Brennan Undseth, Xiao Xue, Mohammad Mehmandoost, Maximilian Russ, Pieter T. Eendebak, Nodar Samkharadze, Amir Sammak, Viatcheslav V. Dobrovitski, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Micromagnet-based electric dipole spin resonance (EDSR) offers an attractive path for the near-term scaling of dense arrays of silicon spin qubits in gate-defined quantum dots while maintaining long coherence times and high control fidelities. However, accurately controlling dense arrays of qubits using a multiplexed drive will require an understanding of the crosstalk mechanisms that may reduce o… ▽ More Micromagnet-based electric dipole spin resonance (EDSR) offers an attractive path for the near-term scaling of dense arrays of silicon spin qubits in gate-defined quantum dots while maintaining long coherence times and high control fidelities. However, accurately controlling dense arrays of qubits using a multiplexed drive will require an understanding of the crosstalk mechanisms that may reduce operational fidelity. We identify a novel crosstalk mechanism whereby the Rabi frequency of a driven qubit is drastically changed when the drive of an adjacent qubit is turned on. These observations raise important considerations for scaling single-qubit control. △ Less

Submitted 6 January, 2023; v1 submitted 10 May, 2022; originally announced May 2022.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. Applied 19, 044078 (2023)

Probing the Jaynes-Cummings Ladder with Spin Circuit Quantum Electrodynamics

Authors: Tobias Bonsen, Patrick Harvey-Collard, Maximilian Russ, Jurgen Dijkema, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: We report observations of transitions between excited states in the Jaynes-Cummings ladder of circuit quantum electrodynamics with electron spins (spin circuit QED). We show that unexplained features in recent experimental work correspond to such transitions and present an input-output framework that includes these effects. In new experiments, we first reproduce previous observations and then reve… ▽ More We report observations of transitions between excited states in the Jaynes-Cummings ladder of circuit quantum electrodynamics with electron spins (spin circuit QED). We show that unexplained features in recent experimental work correspond to such transitions and present an input-output framework that includes these effects. In new experiments, we first reproduce previous observations and then reveal both excited-state transitions and multiphoton transitions by increasing the probe power and using two-tone spectroscopy. This ability to probe the Jaynes-Cummings ladder is enabled by improvements in the coupling-to-decoherence ratio, and shows an increase in the maturity of spin circuit QED as an interesting platform for studying quantum phenomena. △ Less

Submitted 25 April, 2023; v1 submitted 10 March, 2022; originally announced March 2022.

Comments: 12 pages, 7 figures

Journal ref: Physical review letters, 130(13), 137001 (2023)

Phase flip code with semiconductor spin qubits

Authors: F. van Riggelen, W. I. L. Lawrie, M. Russ, N. W. Hendrickx, A. Sammak, M. Rispler, B. M. Terhal, G. Scappucci, M. Veldhorst

Abstract: The fault-tolerant operation of logical qubits is an important requirement for realizing a universal quantum computer. Spin qubits based on quantum dots have great potential to be scaled to large numbers because of their compatibility with standard semiconductor manufacturing. Here, we show that a quantum error correction code can be implemented using a four-qubit array in germanium. We demonstrat… ▽ More The fault-tolerant operation of logical qubits is an important requirement for realizing a universal quantum computer. Spin qubits based on quantum dots have great potential to be scaled to large numbers because of their compatibility with standard semiconductor manufacturing. Here, we show that a quantum error correction code can be implemented using a four-qubit array in germanium. We demonstrate a resonant SWAP gate and by combining controlled-Z and controlled-$\text{S}^{-1}$ gates we construct a Toffoli-like three-qubit gate. We execute a two-qubit phase flip code and find that we can preserve the state of the data qubit by applying a refocusing pulse to the ancilla qubit. In addition, we implement a phase flip code on three qubits, making use of a Toffoli-like gate for the final correction step. Both the quality and quantity of the qubits will require significant improvement to achieve fault-tolerance. However, the capability to implement quantum error correction codes enables co-design development of quantum hardware and software, where codes tailored to the properties of spin qubits and advances in fabrication and operation can now come together to scale semiconductor quantum technology toward universal quantum computers. △ Less

Submitted 23 February, 2022; originally announced February 2022.

Comments: 8 pages, 4 figures

Universal control of a six-qubit quantum processor in silicon

Authors: Stephan G. J. Philips, Mateusz T. Mądzik, Sergey V. Amitonov, Sander L. de Snoo, Maximilian Russ, Nima Kalhor, Christian Volk, William I. L. Lawrie, Delphine Brousse, Larysa Tryputen, Brian Paquelet Wuetz, Amir Sammak, Menno Veldhorst, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity… ▽ More Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity of either single- or two-qubit operations, or initialization and readout. Here we increase the number of qubits and simultaneously achieve respectable fidelities for universal operation, state preparation and measurement. We design, fabricate and operate a six-qubit processor with a focus on careful Hamiltonian engineering, on a high level of abstraction to program the quantum circuits and on efficient background calibration, all of which are essential to achieve high fidelities on this extended system. State preparation combines initialization by measurement and real-time feedback with quantum-non-demolition measurements. These advances will allow for testing of increasingly meaningful quantum protocols and constitute a major stepping stone towards large-scale quantum computers. △ Less

Submitted 18 February, 2022; originally announced February 2022.

Comments: 38 pages (including supplementary material)

Wafer-scale low-disorder 2DEG in $^{28}$Si/SiGe without an epitaxial Si cap

Authors: Davide Degli Esposti, Brian Paquelet Wuetz, Viviana Fezzi, Mario Lodari, Amir Sammak, Giordano Scappucci

Abstract: We grow $^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, $^{28}$Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron… ▽ More We grow $^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, $^{28}$Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K we measure a high mean mobility of (1.8$\pm$0.5)$\times$10$^5$ cm$^2$/Vs and a low mean percolation density of (9$\pm$1)$\times$10$^{10}$ cm$^{-2}$. From the analysis of Shubnikov-de Haas oscillations at T = 190 mK we obtain a long mean single particle relaxation time of (8.1$\pm$0.5) ps, corresponding to a mean quantum mobility and quantum level broadening of (7.5$\pm$0.6)$\times$10$^4$ cm$^{2}$/Vs and (40$\pm$3) $μ$eV, respectively, and a small mean Dingle ratio of (2.3$\pm$0.2), indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits. △ Less

Submitted 21 April, 2022; v1 submitted 16 February, 2022; originally announced February 2022.

A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

Authors: P. L. Bavdaz, H. G. J. Eenink, J. van Staveren, M. Lodari, C. G. Almudever, J. S. Clarke, F. Sebastiano, M. Veldhorst, G. Scappucci

Abstract: We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial $^{28}$Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wi… ▽ More We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial $^{28}$Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wider channel devices and obtain a normal distribution of pinch-off voltages for nominally identical tunnel barriers probed over 1296 gate crossings. Macroscopically across the crossbar, we measure an average pinch-off of 1.17~V with a standard deviation of 46.8 mV, while local differences within each unit cell indicate a standard deviation of 23.1~mV. These disorder potential landscape variations translate to 1.2 and 0.6 times the measured quantum dot charging energy, respectively. Such metrics provide means for material and device optimization and serve as guidelines in the design of large-scale architectures for fault-tolerant semiconductor-based quantum computing. △ Less

Submitted 9 February, 2022; originally announced February 2022.

A shuttling-based two-qubit logic gate for linking distant silicon quantum processors

Authors: Akito Noiri, Kenta Takeda, Takashi Nakajima, Takashi Kobayashi, Amir Sammak, Giordano Scappucci, Seigo Tarucha

Abstract: Control of entanglement between qubits at distant quantum processors using a two-qubit gate is an essential function of a scalable, modular implementation of quantum computation. Among the many qubit platforms, spin qubits in silicon quantum dots are promising for large-scale integration along with their nanofabrication capability. However, linking distant silicon quantum processors is challenging… ▽ More Control of entanglement between qubits at distant quantum processors using a two-qubit gate is an essential function of a scalable, modular implementation of quantum computation. Among the many qubit platforms, spin qubits in silicon quantum dots are promising for large-scale integration along with their nanofabrication capability. However, linking distant silicon quantum processors is challenging as two-qubit gates in spin qubits typically utilize short-range exchange coupling, which is only effective between nearest-neighbor quantum dots. Here we demonstrate a two-qubit gate between spin qubits via coherent spin shuttling, a key technology for linking distant silicon quantum processors. Coherent shuttling of a spin qubit enables efficient switching of the exchange coupling with an on/off ratio exceeding 1,000 , while preserving the spin coherence by 99.6% for the single shuttling between neighboring dots. With this shuttling-mode exchange control, we demonstrate a two-qubit controlled-phase gate with a fidelity of 93%, assessed via randomized benchmarking. Combination of our technique and a phase coherent shuttling of a qubit across a large quantum dot array will provide feasible path toward a quantum link between distant silicon quantum processors, a key requirement for large-scale quantum computation. △ Less

Submitted 16 September, 2022; v1 submitted 2 February, 2022; originally announced February 2022.

Journal ref: Nature Communications 13, 5740 (2022)

A high-mobility hole bilayer in a germanium double quantum well

Authors: A. Tosato, B. M. Ferrari, A. Sammak, A. R. Hamilton, M. Veldhorst, M. Virgilio, G. Scappucci

Abstract: We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individua… ▽ More We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0$\times$10$^{11}$ cm$^{-2}$ the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of $\sim$0.69 meV, in agreement with Schrödinger-Poisson simulations. △ Less

Submitted 18 January, 2022; originally announced January 2022.

Lightly-strained germanium quantum wells with hole mobility exceeding one million

Authors: M. Lodari, O. Kong, M. Rendell, A. Tosato, A. Sammak, M. Veldhorst, A. R. Hamilton, G. Scappucci

Abstract: We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low densit… ▽ More We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density and low magnetic field. The low-disorder and small effective mass (0.068$m_e$) defines lightly-strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware. △ Less

Submitted 5 February, 2022; v1 submitted 22 December, 2021; originally announced December 2021.

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling, Lucas E. A. Stehouwer, Anne-Marije J. Zwerver, Stephan G. J. Philips, Mateusz T. Mądzik, Xiao Xue, Guoji Zheng, Mario Lodari, Sergey V. Amitonov, Nodar Samkharadze, Amir Sammak, Lieven M. K. Vandersypen, Rajib Rahman, Susan N. Coppersmith, Oussama Moutanabbir, Mark Friesen, Giordano Scappucci

Abstract: Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processor… ▽ More Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting. △ Less

Submitted 1 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Journal ref: Nature Communications 13, 7730 (2022)

Valley splitting in silicon from the interference pattern of quantum oscillations

Authors: M. Lodari, L. Lampert, O. Zietz, R. Pillarisetty, J. Clarke, G. Scappucci

Abstract: We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor manufacturing on 300 mm Si wafers and support a 2D electron gas of high quality with a maximum mobility of 17.6$\times$10$^3$cm$^2$/Vs and minimum percolation density… ▽ More We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor manufacturing on 300 mm Si wafers and support a 2D electron gas of high quality with a maximum mobility of 17.6$\times$10$^3$cm$^2$/Vs and minimum percolation density of 3.45$\times$10$^{10}$cm$^{-2}$. Because of the low disorder, we observe beatings in the Shubnikov-de Haas oscillations that arise from the energy-split two low-lying conduction band valleys. From the analysis of the oscillations beating patterns up to T = 1.7 K, we estimate a maximum valley splitting of 8.2 meV at a density of 6.8$\times$10$^{12}$cm$^{-2}$. Furthermore, the valley splitting increases with density at a rate consistent with theoretical predictions for a near-ideal semiconductor/oxide interface. △ Less

Submitted 5 April, 2022; v1 submitted 9 December, 2021; originally announced December 2021.

Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold

Authors: W. I. L. Lawrie, M. Rimbach-Russ, F. van Riggelen, N. W. Hendrickx, S. L. de Snoo, A. Sammak, G. Scappucci, J. Helsen, M. Veldhorst

Abstract: Practical Quantum computing hinges on the ability to control large numbers of qubits with high fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we pre… ▽ More Practical Quantum computing hinges on the ability to control large numbers of qubits with high fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we present single-qubit randomized benchmarking in a two-dimensional array of spin qubits, finding native gate fidelities as high as 99.992(1)%. Furthermore, we benchmark single qubit gate performance while simultaneously driving two and four qubits, utilizing a novel benchmarking technique called N-copy randomized benchmarking, designed for simple experimental implementation and accurate simultaneous gate fidelity estimation. We find two- and four-copy randomized benchmarking fidelities of 99.905(8)% and 99.34(4)% respectively, and that next-nearest neighbour pairs are highly robust to cross-talk errors. These characterizations of single-qubit gate quality are crucial for scaling up quantum information technology. △ Less

Submitted 26 July, 2023; v1 submitted 16 September, 2021; originally announced September 2021.

Comments: Main text 9 pages, 3 figures. Supp Info 21 pages, 7 figures, 8 tables

Journal ref: Nature Communications 14, 3617 (2023)

Fast universal quantum control above the fault-tolerance threshold in silicon

Authors: Akito Noiri, Kenta Takeda, Takashi Nakajima, Takashi Kobayashi, Amir Sammak, Giordano Scappucci, Seigo Tarucha

Abstract: Fault-tolerant quantum computers which can solve hard problems rely on quantum error correction. One of the most promising error correction codes is the surface code, which requires universal gate fidelities exceeding the error correction threshold of 99 per cent. Among many qubit platforms, only superconducting circuits, trapped ions, and nitrogen-vacancy centers in diamond have delivered those r… ▽ More Fault-tolerant quantum computers which can solve hard problems rely on quantum error correction. One of the most promising error correction codes is the surface code, which requires universal gate fidelities exceeding the error correction threshold of 99 per cent. Among many qubit platforms, only superconducting circuits, trapped ions, and nitrogen-vacancy centers in diamond have delivered those requirements. Electron spin qubits in silicon are particularly promising for a large-scale quantum computer due to their nanofabrication capability, but the two-qubit gate fidelity has been limited to 98 per cent due to the slow operation.Here we demonstrate a two-qubit gate fidelity of 99.5 per cent, along with single-qubit gate fidelities of 99.8 per cent, in silicon spin qubits by fast electrical control using a micromagnet-induced gradient field and a tunable two-qubit coupling. We identify the condition of qubit rotation speed and coupling strength where we robustly achieve high-fidelity gates. We realize Deutsch-Jozsa and Grover search algorithms with high success rates using our universal gate set. Our results demonstrate the universal gate fidelity beyond the fault-tolerance threshold and pave the way for scalable silicon quantum computers. △ Less

Submitted 10 August, 2021; v1 submitted 5 August, 2021; originally announced August 2021.

Journal ref: Nature 601, 338-342 (2022)

Coherent spin-spin coupling mediated by virtual microwave photons

Authors: Patrick Harvey-Collard, Jurgen Dijkema, Guoji Zheng, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spi… ▽ More We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spin linewidths is observed with an exchange splitting around $2J/2π= 20 \ \text{MHz}$. In addition, photon-number states are resolved from the shift $2χ_s/2π= -13 \ \text{MHz}$ that they induce on the spin frequency. These observations demonstrate that we reach the strong dispersive regime of circuit quantum electrodynamics with spins. Achieving spin-spin coupling without real photons is essential to long-range two-qubit gates between spin qubits and scalable networks of spin qubits on a chip. △ Less

Submitted 12 May, 2022; v1 submitted 2 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. X 12, 021026 (2022)

Computing with spin qubits at the surface code error threshold

Authors: Xiao Xue, Maximilian Russ, Nodar Samkharadze, Brennan Undseth, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than they occur. The central requirement for fault-tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the ~1% error threshold of the well-known surface… ▽ More High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than they occur. The central requirement for fault-tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the ~1% error threshold of the well-known surface code. Reaching two-qubit gate fidelities above 99% has been a long-standing major goal for semiconductor spin qubits. These qubits are well positioned for scaling as they can leverage advanced semiconductor technology. Here we report a spin-based quantum processor in silicon with single- and two-qubit gate fidelities all above 99.5%, extracted from gate set tomography. The average single-qubit gate fidelities remain above 99% when including crosstalk and idling errors on the neighboring qubit. Utilizing this high-fidelity gate set, we execute the demanding task of calculating molecular ground state energies using a variational quantum eigensolver algorithm. Now that the 99% barrier for the two-qubit gate fidelity has been surpassed, semiconductor qubits have gained credibility as a leading platform, not only for scaling but also for high-fidelity control. △ Less

Submitted 1 July, 2021; originally announced July 2021.

Comments: 19 pages, 11 figures

Journal ref: Nature 601, 343-347 (2022)

Single-Hole Pump in Germanium

Authors: A. Rossi, N. W. Hendrickx, A. Sammak, M. Veldhorst, G. Scappucci, M. Kataoka

Abstract: Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and speed of operation, in the past decade there has been a focus on semiconductor-based devices. The use of a variety of semiconductor materials enables the univer… ▽ More Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and speed of operation, in the past decade there has been a focus on semiconductor-based devices. The use of a variety of semiconductor materials enables the universality of charge pump devices to be tested, a highly desirable demonstration for metrology, with GaAs and Si pumps at the forefront of these tests. Here, we show that pumping can be achieved in a yet unexplored semiconductor, i.e. germanium. We realise a single-hole pump with a tunable-barrier quantum dot electrostatically defined at a Ge/SiGe heterostructure interface. We observe quantized current plateaux by driving the system with a single sinusoidal drive up to a frequency of 100 MHz. The operation of the prototype was affected by accidental formation of multiple dots, probably due to disorder potential, and random charge fluctuations. We suggest straightforward refinements of the fabrication process to improve pump characteristics in future experiments. △ Less

Submitted 31 May, 2021; originally announced May 2021.

Comments: 7 pages, 4 figures

Journal ref: J. Phys. D: Appl. Phys. 54 434001 (2021)

InSbAs two-dimensional electron gases as a platform for topological superconductivity

Authors: Christian M. Moehle, Chung Ting Ke, Qingzhen Wang, Candice Thomas, Di Xiao, Saurabh Karwal, Mario Lodari, Vincent van de Kerkhof, Ruben Termaat, Geoffrey C. Gardner, Giordano Scappucci, Michael J. Manfra, Srijit Goswami

Abstract: Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material systems. Among these, two-dimensional electron gases (2DEGs) are of particular interest due to their inherent design flexibility and scalability. Here we discuss resu… ▽ More Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material systems. Among these, two-dimensional electron gases (2DEGs) are of particular interest due to their inherent design flexibility and scalability. Here we discuss results on a 2D platform based on a ternary 2DEG (InSbAs) coupled to in-situ grown Aluminum. The spin-orbit coupling in these 2DEGs can be tuned with the As concentration, reaching values up to 400 meV$\unicode{xC5}$, thus exceeding typical values measured in its binary constituents. In addition to a large Landé g-factor $\sim$ 55 (comparable to InSb), we show that the clean superconductor-semiconductor interface leads to a hard induced superconducting gap. Using this new platform we demonstrate the basic operation of phase-controllable Josephson junctions, superconducting islands and quasi-1D systems, prototypical device geometries used to study Majorana zero modes. △ Less

Submitted 4 November, 2021; v1 submitted 21 May, 2021; originally announced May 2021.

Semiconductor materials stacks for quantum dot spin qubits

Authors: Giordano Scappucci

Abstract: In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disorder from electrical transport. This brief note is far from being exhaustive and should be considered a first introduction to the materials challenges a… ▽ More In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disorder from electrical transport. This brief note is far from being exhaustive and should be considered a first introduction to the materials challenges and opportunities towards a larger spin qubit quantum processor. △ Less

Submitted 23 February, 2021; v1 submitted 22 February, 2021; originally announced February 2021.

Comments: An edited version of this manuscript will appear as an article section in MRS Bulletin

Qubits made by advanced semiconductor manufacturing

Authors: A. M. J. Zwerver, T. Krähenmann, T. F. Watson, L. Lampert, H. C. George, R. Pillarisetty, S. A. Bojarski, P. Amin, S. V. Amitonov, J. M. Boter, R. Caudillo, D. Corras-Serrano, J. P. Dehollain, G. Droulers, E. M. Henry, R. Kotlyar, M. Lodari, F. Luthi, D. J. Michalak, B. K. Mueller, S. Neyens, J. Roberts, N. Samkharadze, G. Zheng, O. K. Zietz , et al. (4 additional authors not shown)

Abstract: Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr… ▽ More Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer △ Less

Submitted 29 January, 2021; originally announced January 2021.

Comments: 23 pages, 4 figures, 12 supplementary figures

Journal ref: Nature Electronics 5, 184-190 (2022)

Electron-hole superfluidity in strained Si/Ge type II heterojunctions

Authors: Sara Conti, Samira Saberi Pouya, Andrea Perali, Michele Virgilio, Francois M. Peeters, Alexander R. Hamilton, Giordano Scappucci, David Neilson

Abstract: Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich… ▽ More Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich SiGe crystal, would lead to observable mass-imbalanced electron-hole superfluidity and BEC. Holes would be confined in a compressively strained Ge quantum well and electrons in a lattice-matched tensile strained Si quantum well. We envision a device architecture that does not require an insulating barrier at the Si/Ge interface, since this interface offers a type II band alignment. Thus the electrons and holes can be kept very close but strictly separate, strengthening the electron-hole pairing attraction while preventing fast electron-hole recombination. The band alignment also allows a one-step procedure for making independent contacts to the electron and hole layers, overcoming a significant obstacle to device fabrication. We predict superfluidity at experimentally accessible temperatures of a few Kelvin and carrier densities up to $\sim 6\times 10^{10}$ cm$^{-2}$, while the large imbalance of the electron and hole effective masses can lead to exotic superfluid phases. △ Less

Submitted 14 December, 2020; v1 submitted 10 December, 2020; originally announced December 2020.

Enhancement of Proximity Induced Superconductivity in a Planar Ge Hole Gas

Authors: Kushagra Aggarwal, Andrea Hofmann, Daniel Jirovec, Ivan Prieto, Amir Sammak, Marc Botifoll, Sara Marti-Sanchez, Menno Veldhorst, Jordi Arbiol, Giordano Scappucci, Jeroen Danon, Georgios Katsaros

Abstract: Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust ag… ▽ More Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large \IcRn \ products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 Tesla paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip. △ Less

Submitted 19 February, 2021; v1 submitted 1 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Research 3, 022005 (2021)