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Direct observation of homogeneous cavitation in nanopores
Authors:
V. Doebele,
A. Benoit-Gonin,
F. Souris,
L. Cagnon,
P. Spathis,
P. E. Wolf,
A. Grosman,
M. Bossert,
I. Trimaille,
C. Noûs,
E. Rolley
Abstract:
We report on the evaporation of hexane from porous alumina and silicon membranes. These membranes contain billions of independent nanopores tailored to an ink-bottle shape, where a cavity several tens of nanometers in diameter is separated from the bulk vapor by a constriction. For alumina membranes with narrow enough constrictions, we demonstrate that cavity evaporation proceeds by cavitation. Me…
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We report on the evaporation of hexane from porous alumina and silicon membranes. These membranes contain billions of independent nanopores tailored to an ink-bottle shape, where a cavity several tens of nanometers in diameter is separated from the bulk vapor by a constriction. For alumina membranes with narrow enough constrictions, we demonstrate that cavity evaporation proceeds by cavitation. Measurements of the pressure dependence of the cavitation rate follow the predictions of the bulk, homogeneous, classical nucleation theory, definitively establishing the relevance of homogeneous cavitation as an evaporation mechanism in mesoporous materials. Our results imply that porous alumina membranes are a promising new system to study liquids in a deeply metastable state.
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Submitted 14 December, 2020; v1 submitted 7 July, 2020;
originally announced July 2020.
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Mobility as an Alternative Communication Channel: A Survey
Authors:
Benjamin Baron,
Prométhée Spathis,
Marcelo Dias de Amorim,
Yannis Viniotis,
Mostafa H. Ammar
Abstract:
We review the research literature investigating systems in which mobile entities can carry data while they move. These entities can be either mobile by nature (e.g., human beings and animals) or mobile by design (e.g., trains, airplanes, and cars). The movements of such entities equipped with storage capabilities create a communication channel which can help overcome the limitations or the lack of…
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We review the research literature investigating systems in which mobile entities can carry data while they move. These entities can be either mobile by nature (e.g., human beings and animals) or mobile by design (e.g., trains, airplanes, and cars). The movements of such entities equipped with storage capabilities create a communication channel which can help overcome the limitations or the lack of conventional data networks. Common limitations include the mismatch between the capacity offered by these networks and the traffic demand or their limited deployment owing to environmental factors. Application scenarios include offloading traffic off legacy networks for capacity improvement, bridging connectivity gaps, or deploying ad hoc networks in challenging environments for coverage enhancement.
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Submitted 31 May, 2018; v1 submitted 13 February, 2018;
originally announced February 2018.
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PtSi Clustering In Silicon Probed by Transport Spectroscopy
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Riccardo Rurali,
Xavier Cartoixa,
Pascal Gentile,
Silvano de Franceschi
Abstract:
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phen…
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Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.
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Submitted 21 July, 2014;
originally announced July 2014.
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Condensation of helium in aerogels and athermal dynamics of the Random Field Ising Model
Authors:
Geoffroy Aubry,
Fabien Bonnet,
Mathieu Melich,
Laurent Guyon,
Panayotis Spathis,
Florence Despetis,
Pierre-Etienne Wolf
Abstract:
High resolution measurements reveal that condensation isotherms of $^4$He in a silica aerogel become discontinuous below a critical temperature. We show that this behaviour does not correspond to an equilibrium phase transition modified by the disorder induced by the aerogel structure, but to the disorder-driven critical point predicted for the athermal out-of-equilibrium dynamics of the Random Fi…
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High resolution measurements reveal that condensation isotherms of $^4$He in a silica aerogel become discontinuous below a critical temperature. We show that this behaviour does not correspond to an equilibrium phase transition modified by the disorder induced by the aerogel structure, but to the disorder-driven critical point predicted for the athermal out-of-equilibrium dynamics of the Random Field Ising Model. Our results evidence the key role of non-equilibrium effects in the phase transitions of disordered systems.
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Submitted 7 September, 2014; v1 submitted 5 September, 2013;
originally announced September 2013.
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Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Pascal Gentile,
Silvano De Franceschi
Abstract:
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surroun…
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We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid-helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.
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Submitted 7 August, 2012;
originally announced August 2012.
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Joule-assisted silicidation for short-channel silicon nanowire devices
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Pascal Gentile,
Marc Sanquer,
Silvano De Franceschi
Abstract:
We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-si…
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We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm.
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Submitted 25 October, 2011;
originally announced October 2011.
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Observation of spin-selective tunneling in SiGe nanocrystals
Authors:
G. Katsaros,
V. N. Golovach,
P. Spathis,
N. Ares,
M. Stoffel,
F. Fournel,
O. G. Schmidt,
L. I. Glazman,
S. De Franceschi
Abstract:
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be…
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Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.
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Submitted 20 July, 2011;
originally announced July 2011.
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A Josephson Quantum Electron Pump
Authors:
F. Giazotto,
P. Spathis,
S. Roddaro,
S. Biswas,
F. Taddei,
M. Governale,
L. Sorba
Abstract:
A macroscopic fluid pump works according to the law of Newtonian mechanics and transfers a large number of molecules per cycle (of the order of 10^23). By contrast, a nano-scale charge pump can be thought as the ultimate miniaturization of a pump, with its operation being subject to quantum mechanics and with only few electrons or even fractions of electrons transfered per cycle. It generates a di…
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A macroscopic fluid pump works according to the law of Newtonian mechanics and transfers a large number of molecules per cycle (of the order of 10^23). By contrast, a nano-scale charge pump can be thought as the ultimate miniaturization of a pump, with its operation being subject to quantum mechanics and with only few electrons or even fractions of electrons transfered per cycle. It generates a direct current in the absence of an applied voltage exploiting the time-dependence of some properties of a nano-scale conductor. The idea of pumping in nanostructures was discussed theoretically a few decades ago [1-4]. So far, nano-scale pumps have been realised only in system exhibiting strong Coulombic effects [5-12], whereas evidence for pumping in the absence of Coulomb-blockade has been elusive. A pioneering experiment by Switkes et al. [13] evidenced the difficulty of modulating in time the properties of an open mesoscopic conductor at cryogenic temperatures without generating undesired bias voltages due to stray capacitances [14,15]. One possible solution to this problem is to use the ac Josephson effect to induce periodically time-dependent Andreev-reflection amplitudes in a hybrid normal-superconducting system [16]. Here we report the experimental detection of charge flow in an unbiased InAs nanowire (NW) embedded in a superconducting quantum interference device (SQUID). In this system, pumping may occur via the cyclic modulation of the phase of the order parameter of different superconducting electrodes. The symmetry of the current with respect to the enclosed magnetic flux [17,18] and bias SQUID current is a discriminating signature of pumping. Currents exceeding 20 pA are measured at 250 mK, and exhibit symmetries compatible with a pumping mechanism in this setup which realizes a Josephson quantum electron pump (JQEP).
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Submitted 21 February, 2011;
originally announced February 2011.
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Cooling electrons from 1 K to 400 mK with V-based nanorefrigerators
Authors:
O. Quaranta,
P. Spathis,
F. Beltram,
F. Giazotto
Abstract:
The fabrication and operation of V-based superconducting nanorefrigerators is reported. Specifically, electrons in an Al island are cooled thanks to hot-quasiparticle extraction provided by tunnel-coupled V electrodes. Electronic temperature reduction down to 400 mK starting from 1 K is demonstrated with a cooling power ~20 pW at 1 K for a junction area of 0.3 micron^2. The present architecture ex…
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The fabrication and operation of V-based superconducting nanorefrigerators is reported. Specifically, electrons in an Al island are cooled thanks to hot-quasiparticle extraction provided by tunnel-coupled V electrodes. Electronic temperature reduction down to 400 mK starting from 1 K is demonstrated with a cooling power ~20 pW at 1 K for a junction area of 0.3 micron^2. The present architecture extends to higher temperatures refrigeration based on tunneling between superconductors and paves the way to the implementation of a multi-stage on-chip cooling scheme operating from above 1 K down to the mK regime.
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Submitted 2 November, 2010;
originally announced November 2010.
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Hybrid InAs nanowire-vanadium proximity SQUID
Authors:
Panayotis Spathis,
Subhajit Biswas,
Stefano Roddaro,
Lucia Sorba,
Francesco Giazotto,
Fabio Beltram
Abstract:
We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) based on InAs nanowires and vanadium superconducting electrodes. These mesoscopic devices are found to be extremely robust against thermal cycling and to operate up to temperatures of $\sim2.5$~K with reduced power dissipation. We show that our geometry allows to obtain nearly-symmetric devices…
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We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) based on InAs nanowires and vanadium superconducting electrodes. These mesoscopic devices are found to be extremely robust against thermal cycling and to operate up to temperatures of $\sim2.5$~K with reduced power dissipation. We show that our geometry allows to obtain nearly-symmetric devices with very large magnetic-field modulation of the critical current. All these properties make these devices attractive for on-chip quantum-circuit implementation.
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Submitted 12 October, 2010;
originally announced October 2010.
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Quantum transport in GaN/AlN double-barrier heterostructure nanowires
Authors:
R. Songmuang,
G. Katsaros,
E. Monroy,
P. Spathis,
C. Bourgeral,
M. Mongillo,
S. De Franceschi
Abstract:
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped mi…
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We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ~100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN well in between. In the case of 6-nm-thick wells and 2-nm-thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For narrower wells and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ~150 K.
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Submitted 20 May, 2010;
originally announced May 2010.
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Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
Authors:
G. Katsaros,
P. Spathis,
M. Stoffel,
F. Fournel,
M. Mongillo,
V. Bouchiat,
F. Lefloch,
A. Rastelli,
O. G. Schmidt,
S. De Franceschi
Abstract:
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made b…
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The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.
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Submitted 11 May, 2010;
originally announced May 2010.
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Nernst effect as a probe of superconducting fluctuations in disordered thin films
Authors:
A. Pourret,
P. Spathis,
H. Aubin,
K. Behnia
Abstract:
In amorphous superconducting thin films of $Nb_{0.15}Si_{0.85}$ and $InO_x$, a finite Nernst coefficient can be detected in a wide range of temperature and magnetic field. Due to the negligible contribution of normal quasi-particles, superconducting fluctuations easily dominate the Nernst response in the entire range of study. In the vicinity of the critical temperature and in the zero-field lim…
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In amorphous superconducting thin films of $Nb_{0.15}Si_{0.85}$ and $InO_x$, a finite Nernst coefficient can be detected in a wide range of temperature and magnetic field. Due to the negligible contribution of normal quasi-particles, superconducting fluctuations easily dominate the Nernst response in the entire range of study. In the vicinity of the critical temperature and in the zero-field limit, the magnitude of the signal is in quantitative agreement with what is theoretically expected for the Gaussian fluctuations of the superconducting order parameter. Even at higher temperatures and finite magnetic field, the Nernst coefficient is set by the size of superconducting fluctuations. The Nernst coefficient emerges as a direct probe of the ghost critical field, the normal-state mirror of the upper critical field. Moreover, upon leaving the normal state with fluctuating Cooper pairs, we show that the temperature evolution of the Nernst coefficient is different whether the system enters a vortex solid, a vortex liquid or a phase-fluctuating superconducting regime.
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Submitted 16 February, 2009;
originally announced February 2009.
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Nature of c-axis coupling in underdoped Bi2Sr2CaCu2O8 with varying degrees of disorder
Authors:
Panayotis Spathis,
Sylvain Colson,
Feng Yang,
Cornelis Jacominus Van Der Beek,
Piotr Gierlowski,
Takasada Shibauchi,
Yuji Matsuda,
Marat Gaifullin,
Ming Li,
Peter H. Kes
Abstract:
The dependence of the Josephson Plasma Resonance (JPR) frequency in heavily underdoped Bi2Sr2CaCu2O8+δon temperature and controlled pointlike disorder, introduced by high-energy electron irradiation, is cross-correlated and compared to the behavior of the ab-plane penetration depth. It is found that the zero temperature plasma frequency, representative of the superfluid component of the c-axis s…
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The dependence of the Josephson Plasma Resonance (JPR) frequency in heavily underdoped Bi2Sr2CaCu2O8+δon temperature and controlled pointlike disorder, introduced by high-energy electron irradiation, is cross-correlated and compared to the behavior of the ab-plane penetration depth. It is found that the zero temperature plasma frequency, representative of the superfluid component of the c-axis spectral weight, decreases proportionally with T_c when the disorder is increased. The temperature dependence of the JPR frequency is the same for all disorder levels, including pristine crystals. The reduction of the c-axis superfluid density as function of disorder is accounted for by pair-breaking induced by impurity scattering in the CuO2 planes, rather than by quantum fluctuations of the superconducting phase. The reduction of the c-axis superfluid density as function of temperature follows a T^{2}--law and is accounted for by quasi-particle hopping through impurity induced interlayer states.
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Submitted 7 January, 2008;
originally announced January 2008.
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Nernst effect in the phase-fluctuating superconductor InO$_x$
Authors:
P. Spathis,
H. Aubin,
A. Pourret,
K. Behnia
Abstract:
We present a study of the Nernst effect in amorphous 2D superconductor InO$_x$, whose low carrier density implies low phase rigidity and strong superconducting phase fluctuations. Instead of presenting the abrupt jump expected at a BCS transition, the Nernst signal evolves continuously through the superconducting transition as previously observed in underdoped cuprates. This contrasts with the c…
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We present a study of the Nernst effect in amorphous 2D superconductor InO$_x$, whose low carrier density implies low phase rigidity and strong superconducting phase fluctuations. Instead of presenting the abrupt jump expected at a BCS transition, the Nernst signal evolves continuously through the superconducting transition as previously observed in underdoped cuprates. This contrasts with the case of Nb$_{0.15}$Si$_{0.85}$, where the Nernst signal due to vortices below T$_{c}$ and by Gaussian fluctuations above are clearly distinct. The behavior of the ghost critical field in InO$_x$ points to a correlation length which does not diverge at $T_c$, a temperature below which the amplitude fluctuations freeze, but phase fluctuations survive.
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Submitted 17 December, 2007;
originally announced December 2007.
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Vortex liquid correlations induced by in-plane field in underdoped Bi2Sr2CaCu2O8+d
Authors:
Panayotis Spathis,
Marcin Konczykowski,
Cornelis J. van der Beek,
Piotr Gierlowski,
Ming Li,
Peter Kes
Abstract:
By measuring the Josephson Plasma Resonance, we have probed the influence of an in-plane magnetic field on the pancake vortex correlations along the c-axis in heavily underdoped Bi2Sr2CaCu2O8+d (Tc = 72.4 +/- 0.6 K) single crystals both in the vortex liquid and in the vortex solid phase. Whereas the in-plane field enhances the interlayer phase coherence in the liquid state close to the melting l…
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By measuring the Josephson Plasma Resonance, we have probed the influence of an in-plane magnetic field on the pancake vortex correlations along the c-axis in heavily underdoped Bi2Sr2CaCu2O8+d (Tc = 72.4 +/- 0.6 K) single crystals both in the vortex liquid and in the vortex solid phase. Whereas the in-plane field enhances the interlayer phase coherence in the liquid state close to the melting line, it slightly depresses it in the solid state. This is interpreted as the result of an attractive force between pancake vortices and Josephson vortices, apparently also present in the vortex liquid state. The results unveil a boundary between a correlated vortex liquid in which pancakes adapt to Josephson vortices, and the usual homogeneous liquid.
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Submitted 27 July, 2006;
originally announced July 2006.
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Role of pair-breaking and phase fluctuations in c-axis tunneling in underdoped Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$
Authors:
C. J. van der Beek,
P. Spathis,
S. Colson,
P. Gierlowski,
M. Gaifullin,
Yuji Matsuda,
P. H. Kes
Abstract:
The Josephson Plasma Resonance is used to study the c-axis supercurrent in the superconducting state of underdoped Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ with varying degrees of controlled point-like disorder, introduced by high-energy electron irradiation. As disorder is increased, the Josephson Plasma frequency decreases proportionally to the critical temperature. The temperature dependence of th…
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The Josephson Plasma Resonance is used to study the c-axis supercurrent in the superconducting state of underdoped Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ with varying degrees of controlled point-like disorder, introduced by high-energy electron irradiation. As disorder is increased, the Josephson Plasma frequency decreases proportionally to the critical temperature. The temperature dependence of the plasma frequency does not depend on the irradiation dose, and is in quantitative agreement with a model for quantum fluctuations of the superconducting phase in the CuO$_{2}$ layers.
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Submitted 26 July, 2006;
originally announced July 2006.
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In-plane field-induced vortex liquid correlations in underdoped Bi_2Sr_2CaCu_2O_8+δ
Authors:
Panayotis Spathis,
Marcin Konczykowski,
Piotr Gierlowski,
Ming Li,
Peter H. Kes,
Cornelis J. van der Beek
Abstract:
The effect of a magnetic field component parallel to the superconducting layers on longitudinal Josephson plasma oscillations in the layered high temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ is shown to depend on the thermodynamic state of the underlying vortex lattice. Whereas the parallel magnetic field component depresses the Josephson Plasma Resonance (JPR) frequency in the vorte…
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The effect of a magnetic field component parallel to the superconducting layers on longitudinal Josephson plasma oscillations in the layered high temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ is shown to depend on the thermodynamic state of the underlying vortex lattice. Whereas the parallel magnetic field component depresses the Josephson Plasma Resonance (JPR) frequency in the vortex solid phase, it may enhance it in the vortex liquid. There is a close correlation between the behavior of microwave absorption near the JPR frequency and the effectiveness of pancake vortex pinning, with the enhancement of the plasma resonance frequency occurring in the absence of pinning, at high temperature close to the vortex melting line. An interpretation is proposed in terms of the attraction between pancake vortices and Josephson vortices, apparently also present in the vortex liquid state.
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Submitted 25 June, 2007; v1 submitted 24 July, 2006;
originally announced July 2006.
